CN102403645A - Quasi-three-level laser - Google Patents
Quasi-three-level laser Download PDFInfo
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- CN102403645A CN102403645A CN2011103840178A CN201110384017A CN102403645A CN 102403645 A CN102403645 A CN 102403645A CN 2011103840178 A CN2011103840178 A CN 2011103840178A CN 201110384017 A CN201110384017 A CN 201110384017A CN 102403645 A CN102403645 A CN 102403645A
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Abstract
The invention discloses a quasi-three-level laser which realizes high-efficiency, low-threshold and high-brightness 0.9X[mu]m laser. A light path is in sequence provided with a polarization pump light generation unit, a beam shaping unit, a gain medium unit and a 0.9X[mu]m optical resonance cavity unit, wherein the polarization pump light generation unit is used for pumping Nd3+ in a laser medium to the upper energy level of the 0.9X[mu]m quasi-three-level laser; the polarization pump light generation unit is a laser device with a central wavelength of 500nm to 900nm, and the laser output polarization ratio of the laser device is more than 0.9; the beam shaping unit is used for shaping a laser beam output by the polarization pump light generation unit into a pump beam matched with the laser medium and an optical resonance cavity; the gain medium unit is used for generating 0.9X[mu]m photons by induced transition; and the 0.9X[mu]m optical resonance cavity unit is used for generating low-threshold and high-brightness 0.9X[mu]m lasers.
Description
Technical field
The invention belongs to photoelectron and laser technology technical field, concrete relate to a kind of 0.9X μ m quasi-three-level laser.
Background technology
Nd
3+The laser line that the quasi-three-level transition produces is positioned at 0.9X μ m (0.9≤0.9X wherein<1.0) near the wave band, can produce shorter wavelength (than 1 μ m), the laser of this spectral coverage has a lot of special application on steam detection, ozone sounding and differential absorption lidar.The more important thing is, can be converted to blue spectral region through frequency multiplication, owing to blue laser is stored at high density data, the panchromatic demonstration of RGB, biomedicine, high resolution printed, there is purposes widely aspects such as subsurface communication and Raman spectrum.
1987; The Fan of Stanford University and Byer have set up the theoretical model of quasi-three-level laser; Illustrate mechanism of absorption unique in the quasi-three-level laser system, and adopted 808 nm LD pumping Nd:YAG rod, at room temperature obtained the continuous laser output of 946 nm first.After this, full-fledged along with middle high-power semiconductor laser, the continuing to bring out of the new pattern laser medium of function admirable, the variation of laser pumping type and laser medium geometry, 0.9X μ m quasi-three-level laser demonstrates flourish situation.The neodymium-doped vanadate has absorption cross-section and line-width is bigger; 0.9X the stimulated emission cross section of μ m transition is big; Can produce excellent optical property such as polarised light and the thermal conductivity height, thermal coefficient of expansion is less, hardness is big; Crystal mass waits good physical property well, and this crystalloid has become the first-selected laser medium in 0.9X μ m quasi-three-level laser and the blue laser gradually.At present, adopt the neodymium-doped vanadate crystal to become the emphasis of 0.9X μ m Laser Study and seeking breakthrough as the quasi-three-level laser of laser medium.From essence; Because shared upper laser level; 0.9X μ m spectral line need carry out mode competition with 1.06 μ m and 1.3 μ m spectral lines; Therefore and the former stimulated emission cross section is merely about 1/10 of 1.06 μ m, requires all very harshness for the choosing of laser crystal (the product Ndl of doping content and crystal length < const), resonator design and plated film, implements difficult.
At present, neodymium-doped vanadate 0.9X μ m quasi-three-level laser mainly exists following problem and needs to be resolved hurrily.The first, power output is low; Peak power output is merely 16.2 W at present, belongs to middle low power laser.The second, conversion efficiency is low, and the light light conversion efficiency is lower than 30% mostly; Lower efficient has caused high power consumption on the one hand, can cause bigger thermal effect on the other hand, thereby has a strong impact on the overall performance of quasi-three-level laser.The 3rd, beam quality is poor, and brightness of laser is low, is difficult to reach practical requirement.
Summary of the invention
For overcoming deficiency of the prior art, the object of the present invention is to provide a kind of 0.9X μ m quasi-three-level laser of realizing high efficiency, low threshold value, high brightness 0.9X μ m laser.
For realizing above-mentioned technical purpose, reach above-mentioned technique effect, the present invention has adopted following technical scheme:
A kind of quasi-three-level laser, it is disposed with the Nd that is used for laser medium on light path
3+The polarized pump light generation unit of the last energy level of pumping to 0.9X μ m quasi-three-level laser, said polarized pump light generation unit be a centre wavelength at 500 nm to the laser between 900 nm, the degree of polarization of said laser output laser is greater than 0.9; One is used for the laser beam of said polarized pump light generation unit output is modified into the beam shaping unit of the pump beam that is complementary with laser medium and optical resonator; One is used to produce the gain media unit of 0.9X μ m photon through induced transition; 0.9X μ m optical resonator unit with a generation 0.9X μ m laser.
Further, said polarized pump light generation unit is semiconductor laser, fiber laser, gas laser or semiconductor pumped solid state laser.
Further, said beam shaping unit is how much orthopedic systems or is a light spectrum reshaping system, or is the integrated system of how much shapings and light spectrum reshaping.
Further, said beam shaping unit is to be made up of single lens, grating, spatial filter, multimode fiber, perhaps by two kinds in lens, grating, spatial filter, the multimode fiber or two or more the composition.
Further; Said gain media unit is columniform neodymium-doped vanadate single crystal or pottery; Or the neodymium-doped vanadate single crystal of hexahedron shape or pottery, or the neodymium-doped vanadate single crystal of video disc shape or pottery, or be the neodymium-doped vanadate single crystal or the pottery of optical fiber shape.
Further; Said optical resonator unit mainly is made up of preceding resonator mirror and back resonator mirror; Be placed with the N kind in spatial filter, polarizer, birefringent filter, F-P etalon, the body Bragg grating successively between resonator mirror and the back resonator mirror before said, the scope of said N is 0≤N≤5.Said 0.9X μ m optical resonator unit is line chamber, v-shaped cavity, Z die cavity or annular chamber.
Said forward and backward resonator mirror is used to control the reflection and transmission rate of 0.9X μ m, 1.06 μ m and 1.3 μ m spectral lines; For the 0.9X μ m vibration photon that produces provides positive feedback; Through travelling to and fro between between the said forward and backward resonator mirror; And from the gain media that activates, obtain energy, realize the accumulation and the amplification of energy; Said spatial filter is used for the Transverse mode of control chamber inner laser; Said polarizer is used for the polarization mode of control chamber inner laser; Said birefringent filter is used for the longitudinal mode pattern of control chamber inner laser; Described F-P etalon is used for the longitudinal mode pattern of control chamber inner laser, and the body Bragg grating is used for the longitudinal mode pattern of control chamber inner laser, guarantees the high brightness output of laser beam.
0.9X μ m quasi-three-level laser of the present invention has been realized high efficiency, the new method of hanging down threshold value, high brightness 0.9X μ m laser; The laser that adopts polarization is as pump light; Utilize the polarization absorption characteristic of neodymium-doped vanadate laser medium; Guaranteeing that 0.9X μ m quasi-three-level laser line takes the lead in improving the absorption efficiency of laser medium to pump light greatly, thereby significantly improving the light light conversion efficiency and the slope efficient of 0.9X μ m laser under the situation of starting of oscillation.
Concrete, compared with prior art, the present invention has following beneficial effect:
(1) adopts polarized pump light generation unit, can effectively improve the absorptivity of gain media, thereby improve the slope efficient of laser greatly pump light;
(2) to the raising of pump light absorption efficiency, can reduce the threshold power of laser greatly, improve the whole light light conversion efficiency of laser;
(3) the remarkable reduction of threshold power can alleviate the thermal effect of laser medium, helps realizing the output of high brightness 0.9X μ m laser;
(4) to effective absorption of pump light, can solve because the additional heat effect problem too much brought of absorptive pumping light not, can improve the stability of laser.
Above-mentioned explanation only is the general introduction of technical scheme of the present invention, understands technological means of the present invention in order can more to know, and can implement according to the content of specification, below with preferred embodiment of the present invention and conjunction with figs. specify as after.
Description of drawings
Accompanying drawing described herein is used to provide further understanding of the present invention, constitutes the application's a part, and illustrative examples of the present invention and explanation thereof are used to explain the present invention, do not constitute improper qualification of the present invention.In the accompanying drawings:
Fig. 1 is a quasi-three-level laser structure sketch map of the present invention.
Fig. 2 is the structural representation of optical resonator of the present invention unit.
Embodiment
Below with reference to accompanying drawing and combine embodiment, specify the present invention.
Embodiment 1:
Referring to shown in Figure 1; A kind of quasi-three-level laser of realizing high efficiency, low threshold value, high brightness 0.9X μ m laser realizes that the device of this method comprises following four parts: polarized pump light generation unit 1, beam shaping unit 2, gain media unit 3 and 0.9X μ m optical resonator unit 4;
Said polarised light generation unit 1 comprises a polarization semiconductor laser, and its mode of operation is a continuous operation mode, and degree of polarization 0.9, maximum continuous pump power are 30W, and output wavelength is 808nm.
Said beam shaping unit 2 comprises a multimode fiber, a collimation focus lens group.Multimode fiber core diameter 200 μ m wherein, numerical aperture NA=0.18; The collimation focus lens group is made up of 4 non-spherical lenses, and it is 99.5% film system that lens surface is coated with 808 nm transmissivities, can regulate the beam waist size of injecting crystals continuously.
Described gain media unit 3 is the neodymium-doped vanadate single crystal; Gain medium adopts the side heat radiation, is wrapped in the red copper radiator, and the radiator bottom is connected with TEC (TEC) upper surface; The TEC bottom surface is connected with fin, and the forced refrigeration through fan carries away heat.
Described 0.9X μ m optical resonator unit 4 is simple line chamber.Wherein front cavity mirror is a level crossing, be coated with anti-reflection to 808 nm and 1064 nm, to the high anti-film of 914 nm system, wherein to the transmissivity of 808 nm greater than 95%, and this film to 1064nm spectral line transmissivity greater than 90%, to the reflectivity of 914 nm greater than 99.8%; Outgoing mirror is a concave mirror, be coated with anti-reflection to 1064 nm and 1342 nm, to the film of 914 nm part transmissions system, wherein to 1064nm spectral line transmissivity greater than 90%, greater than 80%, be 4% to the transmissivity of 1342 nm to the transmissivity of 914 nm.
Preferably, gain medium is both-end composite growth type Nd:YVO
4Monocrystalline, doping content is 0.2at.%, is of a size of 3 * 3 * 8 mm
3, wherein front end is the long non-doping YVO of 4mm
4Crystal; Doped region length is 5mm; Front/rear end all be coated with to wavelength be 808nm, 914nm, 1064nm and 1342nm the anti-reflection film of light beam, wherein to the transmissivity of the light beam of 914nm and 1064nm greater than 99.8%, the transmissivity of the light beam of 808nm and 1340nm is greater than 98%.
Embodiment 2:
Identical substantially with embodiment 1, difference is following:
(1) polarised light generation unit 1 comprises a traditional unpolarized semiconductor laser, a polarizer, and the polarizer is modulated into polarised light with the semiconductor laser emitting laser.Wherein the semiconductor laser mode of operation is a continuous operation mode, and the maximum continuous pump power is 40W, and output wavelength is 808nm; The polarizer is 95% for p ripple transmissivity, to s ripple transmissivity 2%.
(2) gain medium is traditional Nd:GdVO
4Monocrystalline, doping content is 0.2at.%, is of a size of 3 * 3 * 5 mm
3, front/rear end all be coated with to wavelength be 808nm, 912nm, 1064nm and 1340nm the anti-reflection film of light beam, wherein to the transmissivity of the light beam of 912nm and 1064nm greater than 99.8%, the transmissivity of the light beam of 808nm and 1342nm is greater than 98%.
Embodiment 3:
Identical substantially with embodiment 1, difference is following:
(1) polarised light generation unit 1 comprises a polarization semiconductor laser, and its mode of operation is a continuous operation mode, and degree of polarization 0.9, maximum continuous pump power are 40W, and output wavelength is 879nm.
(2) gain medium is traditional Nd:LuVO
4Pottery, doping content is 0.2at.%, is of a size of 3 * 3 * 6 mm
3, front/rear end all be coated with to wavelength be 879nm, 916nm, 1066nm and 1343nm the anti-reflection film of light beam, wherein to the transmissivity of the light beam of 916nm and 1066nm greater than 99.8%, the transmissivity of the light beam of 879nm and 1343nm is greater than 98%.
The above is merely the preferred embodiments of the present invention, is not limited to the present invention, and for a person skilled in the art, the present invention can have various changes and variation.All within spirit of the present invention and principle, any modification of being done, be equal to replacement, improvement etc., all should be included within protection scope of the present invention.
Claims (7)
1. quasi-three-level laser is characterized in that: on light path, be disposed with the Nd that is used for laser medium
3+The polarized pump light generation unit (1) of the last energy level of pumping to 0.9X μ m quasi-three-level laser; Said polarized pump light generation unit (1) be a centre wavelength at 500 nm to the laser between 900 nm, the degree of polarization of said laser output laser is greater than 0.9; One is used for the laser beam of said polarized pump light generation unit (1) output is modified into the beam shaping unit (2) of the pump beam that is complementary with laser medium and optical resonator; One is used to produce the gain media unit (3) of 0.9X μ m photon through induced transition; 0.9X μ m optical resonator unit (4) with a generation 0.9X μ m laser.
2. quasi-three-level laser according to claim 1 is characterized in that: said polarized pump light generation unit (1) is semiconductor laser, fiber laser, gas laser or semiconductor pumped solid state laser.
3. quasi-three-level laser according to claim 1 is characterized in that: said beam shaping unit (2) is how much orthopedic systems or is a light spectrum reshaping system, or is the integrated system of how much shapings and light spectrum reshaping.
4. quasi-three-level laser according to claim 1; It is characterized in that: said beam shaping unit (2) is to be made up of single lens, grating, spatial filter, multimode fiber, perhaps by two kinds in lens, grating, spatial filter, the multimode fiber or two or more the composition.
5. quasi-three-level laser according to claim 1; It is characterized in that: said gain media unit (3) is columniform neodymium-doped vanadate single crystal or pottery; Or the neodymium-doped vanadate single crystal of hexahedron shape or pottery; Or the neodymium-doped vanadate single crystal of video disc shape or pottery, or be the neodymium-doped vanadate single crystal or the pottery of optical fiber shape.
6. according to claim 1 or 2 or 3 or 4 or 5 described quasi-three-level lasers; It is characterized in that: said 0.9X μ m optical resonator unit (4) mainly is made up of preceding resonator mirror (401) and back resonator mirror (402); Be placed with the N kind in spatial filter (403), polarizer (404), birefringent filter (405), F-P etalon (406), the body Bragg grating (407) successively between resonator mirror (401) and the back resonator mirror (402) before said, the scope of said N is 0≤N≤5.
7. quasi-three-level laser according to claim 6 is characterized in that: said 0.9X μ m optical resonator unit (4) is line chamber, v-shaped cavity, Z die cavity or annular chamber.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108574196A (en) * | 2018-03-20 | 2018-09-25 | 苏州十方生物科技有限公司 | A method of optimization Quasi-three level solid state laser device transfer efficiency |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5420876A (en) * | 1994-06-02 | 1995-05-30 | Spectra-Physics Laserplane, Inc. | Gadolinium vanadate laser |
| CN1256536A (en) * | 1998-12-10 | 2000-06-14 | 山西大学 | Single-frequency frequency-doubling solid laser |
| CN101728757A (en) * | 2008-10-30 | 2010-06-09 | 北京中视中科光电技术有限公司 | All-solid-state laser |
-
2011
- 2011-11-28 CN CN2011103840178A patent/CN102403645A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5420876A (en) * | 1994-06-02 | 1995-05-30 | Spectra-Physics Laserplane, Inc. | Gadolinium vanadate laser |
| CN1256536A (en) * | 1998-12-10 | 2000-06-14 | 山西大学 | Single-frequency frequency-doubling solid laser |
| CN101728757A (en) * | 2008-10-30 | 2010-06-09 | 北京中视中科光电技术有限公司 | All-solid-state laser |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108574196A (en) * | 2018-03-20 | 2018-09-25 | 苏州十方生物科技有限公司 | A method of optimization Quasi-three level solid state laser device transfer efficiency |
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Application publication date: 20120404 |