CN102057668B - 宽孔径图像传感器像素 - Google Patents
宽孔径图像传感器像素 Download PDFInfo
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- CN102057668B CN102057668B CN200980121397.7A CN200980121397A CN102057668B CN 102057668 B CN102057668 B CN 102057668B CN 200980121397 A CN200980121397 A CN 200980121397A CN 102057668 B CN102057668 B CN 102057668B
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- pixels
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- imageing sensor
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- 238000012546 transfer Methods 0.000 claims abstract description 14
- 238000006243 chemical reaction Methods 0.000 claims abstract description 12
- 230000007246 mechanism Effects 0.000 claims abstract description 12
- 230000004044 response Effects 0.000 claims abstract description 8
- 238000009792 diffusion process Methods 0.000 claims description 19
- 239000002184 metal Substances 0.000 claims description 17
- 230000005540 biological transmission Effects 0.000 claims description 3
- 238000000034 method Methods 0.000 claims description 3
- 239000000126 substance Substances 0.000 claims description 3
- 238000010586 diagram Methods 0.000 description 11
- 238000012545 processing Methods 0.000 description 11
- 239000004020 conductor Substances 0.000 description 10
- 230000015654 memory Effects 0.000 description 10
- 238000003384 imaging method Methods 0.000 description 7
- 230000035945 sensitivity Effects 0.000 description 5
- 230000008901 benefit Effects 0.000 description 4
- 230000000994 depressogenic effect Effects 0.000 description 4
- 230000003287 optical effect Effects 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 239000002800 charge carrier Substances 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 239000004744 fabric Substances 0.000 description 2
- 238000005286 illumination Methods 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 238000002372 labelling Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 230000009471 action Effects 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 230000000712 assembly Effects 0.000 description 1
- 238000000429 assembly Methods 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 238000012937 correction Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000005622 photoelectricity Effects 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 230000005236 sound signal Effects 0.000 description 1
- 210000003813 thumb Anatomy 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
- H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
- H04N25/778—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising amplifiers shared between a plurality of pixels, i.e. at least one part of the amplifier must be on the sensor array itself
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14603—Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14641—Electronic components shared by two or more pixel-elements, e.g. one amplifier shared by two pixel elements
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/40—Extracting pixel data from image sensors by controlling scanning circuits, e.g. by modifying the number of pixels sampled or to be sampled
- H04N25/46—Extracting pixel data from image sensors by controlling scanning circuits, e.g. by modifying the number of pixels sampled or to be sampled by combining or binning pixels
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14636—Interconnect structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
- H01L27/14645—Colour imagers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/14689—MOS based technologies
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Multimedia (AREA)
- Signal Processing (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
- Color Television Image Signal Generators (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US12/138,651 US8035716B2 (en) | 2008-06-13 | 2008-06-13 | Wide aperture image sensor pixel |
| US12/138,651 | 2008-06-13 | ||
| PCT/US2009/003476 WO2009151585A1 (en) | 2008-06-13 | 2009-06-09 | Wide aperture image sensor pixel |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102057668A CN102057668A (zh) | 2011-05-11 |
| CN102057668B true CN102057668B (zh) | 2016-09-21 |
Family
ID=40940390
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN200980121397.7A Active CN102057668B (zh) | 2008-06-13 | 2009-06-09 | 宽孔径图像传感器像素 |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US8035716B2 (ja) |
| EP (1) | EP2304798B1 (ja) |
| JP (1) | JP5343128B2 (ja) |
| KR (1) | KR101438710B1 (ja) |
| CN (1) | CN102057668B (ja) |
| AT (1) | ATE537560T1 (ja) |
| TW (1) | TWI466275B (ja) |
| WO (1) | WO2009151585A1 (ja) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI504256B (zh) * | 2008-04-07 | 2015-10-11 | Sony Corp | 固態成像裝置，其訊號處理方法，及電子設備 |
| JP5537172B2 (ja) * | 2010-01-28 | 2014-07-02 | ソニー株式会社 | 固体撮像装置及び電子機器 |
| JP5644177B2 (ja) | 2010-05-07 | 2014-12-24 | ソニー株式会社 | 固体撮像装置、および、その製造方法、電子機器 |
| KR102076217B1 (ko) * | 2013-08-06 | 2020-03-02 | 삼성전자주식회사 | 이미지 센서 및 이를 포함하는 전자 장치 |
| US9398237B2 (en) * | 2014-04-30 | 2016-07-19 | Sony Corporation | Image sensor with floating diffusion interconnect capacitor |
| GB2537421A (en) * | 2015-04-17 | 2016-10-19 | Stmicroelectronics (Research & Development) Ltd | A pixel having a plurality of photodiodes |
| JP7458746B2 (ja) * | 2019-11-01 | 2024-04-01 | キヤノン株式会社 | 光電変換装置、撮像システム及び移動体 |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6252217B1 (en) * | 1997-12-18 | 2001-06-26 | Simage Oy | Device for imaging radiation |
| EP1780795A1 (en) * | 2004-07-20 | 2007-05-02 | Fujitsu Limited | Cmos imaging element |
| CN101060128A (zh) * | 2006-04-20 | 2007-10-24 | 株式会社东芝 | 固体摄像装置 |
Family Cites Families (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5164831A (en) * | 1990-03-15 | 1992-11-17 | Eastman Kodak Company | Electronic still camera providing multi-format storage of full and reduced resolution images |
| JP2000152086A (ja) * | 1998-11-11 | 2000-05-30 | Canon Inc | 撮像装置および撮像システム |
| US7057656B2 (en) * | 2000-02-11 | 2006-06-06 | Hyundai Electronics Industries Co., Ltd. | Pixel for CMOS image sensor having a select shape for low pixel crosstalk |
| US7338168B2 (en) * | 2001-07-06 | 2008-03-04 | Palantyr Research, Llc | Particle analyzing system and methodology |
| JP4109944B2 (ja) * | 2002-09-20 | 2008-07-02 | キヤノン株式会社 | 固体撮像装置の製造方法 |
| JP3916612B2 (ja) * | 2003-02-13 | 2007-05-16 | 松下電器産業株式会社 | 固体撮像装置、その駆動方法及びそれを用いたカメラ |
| US7443437B2 (en) * | 2003-11-26 | 2008-10-28 | Micron Technology, Inc. | Image sensor with a gated storage node linked to transfer gate |
| JP4230406B2 (ja) * | 2004-04-27 | 2009-02-25 | 富士通マイクロエレクトロニクス株式会社 | 固体撮像装置 |
| JP4492250B2 (ja) * | 2004-08-11 | 2010-06-30 | ソニー株式会社 | 固体撮像素子 |
| JP2006237462A (ja) * | 2005-02-28 | 2006-09-07 | Matsushita Electric Ind Co Ltd | 固体撮像装置 |
| JP4224036B2 (ja) * | 2005-03-17 | 2009-02-12 | 富士通マイクロエレクトロニクス株式会社 | フォトダイオード領域を埋め込んだイメージセンサ及びその製造方法 |
| WO2007011061A1 (en) * | 2005-07-22 | 2007-01-25 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| US8274715B2 (en) * | 2005-07-28 | 2012-09-25 | Omnivision Technologies, Inc. | Processing color and panchromatic pixels |
| US8139130B2 (en) * | 2005-07-28 | 2012-03-20 | Omnivision Technologies, Inc. | Image sensor with improved light sensitivity |
| US7773138B2 (en) * | 2006-09-13 | 2010-08-10 | Tower Semiconductor Ltd. | Color pattern and pixel level binning for APS image sensor using 2×2 photodiode sharing scheme |
| US20080136933A1 (en) * | 2006-12-11 | 2008-06-12 | Digital Imaging Systems Gmbh | Apparatus for controlling operation of a multiple photosensor pixel image sensor |
-
2008
- 2008-06-13 US US12/138,651 patent/US8035716B2/en active Active
-
2009
- 2009-06-09 WO PCT/US2009/003476 patent/WO2009151585A1/en active Application Filing
- 2009-06-09 JP JP2011513490A patent/JP5343128B2/ja active Active
- 2009-06-09 EP EP09762881A patent/EP2304798B1/en active Active
- 2009-06-09 CN CN200980121397.7A patent/CN102057668B/zh active Active
- 2009-06-09 KR KR1020117000820A patent/KR101438710B1/ko active IP Right Grant
- 2009-06-09 AT AT09762881T patent/ATE537560T1/de active
- 2009-06-12 TW TW098119832A patent/TWI466275B/zh active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6252217B1 (en) * | 1997-12-18 | 2001-06-26 | Simage Oy | Device for imaging radiation |
| EP1780795A1 (en) * | 2004-07-20 | 2007-05-02 | Fujitsu Limited | Cmos imaging element |
| CN101060128A (zh) * | 2006-04-20 | 2007-10-24 | 株式会社东芝 | 固体摄像装置 |
Also Published As
| Publication number | Publication date |
|---|---|
| US8035716B2 (en) | 2011-10-11 |
| KR101438710B1 (ko) | 2014-09-05 |
| JP5343128B2 (ja) | 2013-11-13 |
| EP2304798B1 (en) | 2011-12-14 |
| TW201013909A (en) | 2010-04-01 |
| TWI466275B (zh) | 2014-12-21 |
| KR20110028622A (ko) | 2011-03-21 |
| CN102057668A (zh) | 2011-05-11 |
| EP2304798A1 (en) | 2011-04-06 |
| JP2011525735A (ja) | 2011-09-22 |
| ATE537560T1 (de) | 2011-12-15 |
| US20090310004A1 (en) | 2009-12-17 |
| WO2009151585A1 (en) | 2009-12-17 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| ASS | Succession or assignment of patent right |
Owner name: OMNIVISION TECH INC. Free format text: FORMER OWNER: KODAK COMPANY Effective date: 20110712 |
|
| C41 | Transfer of patent application or patent right or utility model | ||
| COR | Change of bibliographic data |
Free format text: CORRECT: ADDRESS; FROM: NEW YORK STATE, THE USA TO: CALIFORNIA STATE, THE USA |
|
| TA01 | Transfer of patent application right |
Effective date of registration: 20110712 Address after: American California Applicant after: Omnivision Tech Inc. Address before: American New York Applicant before: Eastman Kodak Corp. |
|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C56 | Change in the name or address of the patentee | ||
| CP01 | Change in the name or title of a patent holder |
Address after: American California Patentee after: OmniVision Technologies, Inc. Address before: American California Patentee before: Omnivision Technologies Inc. |