CN102055132A - Semiconductor laser device capable of deep cooling and sealing device thereof - Google Patents
Semiconductor laser device capable of deep cooling and sealing device thereof Download PDFInfo
- Publication number
- CN102055132A CN102055132A CN 201010570383 CN201010570383A CN102055132A CN 102055132 A CN102055132 A CN 102055132A CN 201010570383 CN201010570383 CN 201010570383 CN 201010570383 A CN201010570383 A CN 201010570383A CN 102055132 A CN102055132 A CN 102055132A
- Authority
- CN
- China
- Prior art keywords
- vacuum
- laser
- vacuum cap
- sealing device
- pedestal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Landscapes
- Semiconductor Lasers (AREA)
Abstract
The invention provides a sealing device of a semiconductor laser device, which comprises a vacuum cap and a base, wherein the vacuum cap is formed by a top part and a side wall, a vacuum interface and a plug seat hole are formed at the top part of the vacuum cap, a lower edge extending outwards is arranged at the lower part of the side wall of the vacuum cap, a groove is formed at the lower part of the lower edge, a sealing ring is plugged into the groove, a light output tube extending outwards is arranged on the side wall of the vacuum cap, and a light outlet is formed at the tail end of the light output tube; and the base comprises a base station and a base station edge, and a vacuum cavity is formed by the vacuum cap and the base station in a circling manner. Therefore, the invention ensures that an excellent vacuum cavity with a good sealing performance is formed, condensation on the surface of the surface of the laser tube under a low temperature is prevented, the temperature can be reduced further, and temperature drift can be effectively avoided. The invention further provides a laser device sealed with the sealing device.
Description
Technical field
The present invention relates to the sealing device of semiconductor laser, also relate to the semiconductor laser apparatus that uses the sealing device.
Background technology
Semiconductor laser tube is subjected to the restriction of its principle, and the wavelength of its shoot laser can only change in a certain very little scope, and modulated by temperature.By regulating temperature, can make its wavelength change tens nm at most, generally speaking, mean temperature reduces by 5 degree, and wavelength reduces 1nm.The commercial lasers pipe is not to be that all wavelengths all can obtain, and only comprises discrete several wavelength, as 405nm, 642nm, 650nm, 658nm, 670nm, 785nm, 808nm, 830nm etc.A certain if desired specific wavelength often needs cooling or intensification, but the maximum temperature that most of laser tube can bear is no more than 70 degree, and temperature is high more, life-span is just short more, so generally all select to be higher than the laser tube of required wavelength, cooling obtains then.
Being illustrated as below what is the need for wants the deep cooling laser.The 808nm laser tube of 200mW is very cheap, but the 795nm laser tube of 200mW does not then have, commercial available 795nm laser tube, only less than 50mW, in order to obtain powerful 795nm laser tube, we can buy the 808nm laser tube of 200mW, laser tube to 808nm carries out deep cooling then, probably need be cooled to subzero 30 degree, so, just can obtain the laser tube of the 795nm of 200mW with very low cost.
General knowledge and a large amount of experiments are told us, and temperature is as long as below 5 degree Celsius, and body surface will dewfall, and for laser tube, dewfall just means short circuit, and its operating state certainly can be undesired.Being cooled to that 5 degree are following will dewfall, is to be cooled to subzero 30 degree still more.And under atmospheric pressure be cooled to subzero 30 degree and be unusual difficulty promptly to allow to inadequate cooling (as adopting water-cooled) to subzero 30 degree, because air flows, its temperature drift meeting becomes obviously, thereby causes the drift of laser tube wavelength.For the situation that needs laser frequency stabilization, the stability of temperature drift need be below 0.01 degree.
By above description, can know that for specific application (frequency stabilization of special wavelength) we need degree of depth cooling, and will guarantee that temperature controlled low temperature floats.But the sealing device of conventional semiconductor laser exists that cooling capacity is poor, temperature is floated height, the easy problem of dewfall.
Summary of the invention
Therefore, the object of the present invention is to provide a kind of semiconductor laser sealing device that can vacuumize, cooling capacity is strong, temperature is floated little, as to be difficult for dewfall advantage thereby have.
Another object of the present invention is to provide a kind of semiconductor laser apparatus that utilizes above-mentioned sealing device sealing.
The invention provides a kind of sealing device of semiconductor laser, comprising: vacuum cap, have outward extending lower edge, the below of lower edge has a groove, is plugged with sealing ring in the groove; Pedestal surrounds vacuum chamber with vacuum cap.
In the above-mentioned sealing device, have vacuum interface, connector assembly hole on the vacuum cap and go out light pipe, the end that goes out light pipe has light-emitting window, the vacuum cap sidewall has a plurality of perforation on the lower edge, pedestal upper surface has the corresponding screw of a plurality of and described perforation, screw passes perforation and is screwed in the screw, vacuum cap is fixedlyed connected with pedestal, and sealing ring is crushed in the middle of this pedestal of vacuum cap.
Further, the angle that become with horizontal direction of the plane at described light-emitting window place is a Brewster's angle.
The present invention also provides a kind of semiconductor laser apparatus that utilizes above-mentioned sealing device sealing, comprising: pedestal; Chiller on the pedestal; Laser beam emitting device on the pedestal; Temperature measuring equipment; Vacuum cap; Vacuum connector assembly in the vacuum cap connector assembly hole.Wherein pedestal and vacuum cap form vacuum chamber, and chiller, laser beam emitting device and temperature measuring equipment are arranged in vacuum chamber.
The present invention can form the vacuum chamber of good seal, therefore can prevent under the low temperature at the laser tube surface sweating, and temperature is even lower, thereby can change the laser tube wavelength on a large scale, the vacuum environment that provides of sealing device can effectively be avoided temperature drift in addition, all right dust-separation, thereby the life-span of prolongation laser tube.
Description of drawings
It is following that embodiments of the present invention is further illustrated with reference to accompanying drawing, wherein:
Fig. 1 is a structural representation according to an embodiment of the invention.
Fig. 2 is the perspective view of vacuum cap according to an embodiment of the invention.
Fig. 3 is the structural representation (vertical view) of vacuum cap according to an embodiment of the invention.
Fig. 4 a is a vacuum cap shown in Figure 3 generalized section along the A-A line.
Fig. 4 b is the enlarged diagram of A part among Fig. 4 a.
Fig. 5 is the pictorial diagram (vertical view) of vacuum cap according to an embodiment of the invention.
Fig. 6 is the pictorial diagram (end view) of vacuum cap according to an embodiment of the invention.
Fig. 7 is the perspective view of pedestal according to an embodiment of the invention.
Fig. 8 is the side schematic view of pedestal according to an embodiment of the invention.
Fig. 9 is that laser beam emitting device is placed on the schematic diagram (front view) on the pedestal.
Figure 10 is that laser beam emitting device is placed on the schematic diagram (end view) on the pedestal.
Figure 11 is that laser beam emitting device is placed on the schematic diagram (vertical view) on the pedestal.
The content of each digital representative is among the figure: 100, vacuum cap; 101, vacuum cap top; 102, vacuum cap sidewall; 103, sidewall lower edge; 104, sealing ring; 105, vacuum chamber; 106, vacuum interface; 107, go out light pipe; 108, light-emitting window; 109, wave carrier piece; 110, connector assembly hole; 111, perforation; 200, pedestal; 201, pedestal platform; 202, susceptor edge edge; 203, fixing hole; 204, screw; 300, laser; 301, laser aligner; 302, laser aligner base; 303, conductor refrigeration sheet; 304, thermometer hole
Embodiment
The sealing device of semiconductor laser according to an embodiment of the invention, as shown in Figure 1, comprise vacuum cap 100 and pedestal 200 two parts, vacuum cap 100 combines with pedestal 200 can surround an airtight cavity, by this airtight cavity is vacuumized, semiconductor laser in the airtight cavity is in the vacuum environment, also has cooling device and arrangements of electric connection in this airtight cavity, thereby provide low temperature environment and operating current for semiconductor laser.Describe the concrete structure of sealing device below in detail.
Wherein the structure of vacuum cap 100 as shown in Figure 2, comprise vacuum cap top 101 and vacuum cap sidewall 102, wherein vacuum cap top 101 is rounded, and it is combined on the vacuum cap sidewall 102 of tubular, has vacuum interface 106 and connector assembly hole 110 on the vacuum cap top 101.Vacuum cap sidewall 102 belows have outward extending ring-type lower edge 103, lower edge 103 is evenly distributed with 4 perforation 111 along its circumference, has the outward extending light pipe 107 that goes out on the vacuum cap sidewall 102, the end that goes out light pipe is a light-emitting window 108, post clean wave carrier piece 109 on the light-emitting window, the angle that the plane at light-emitting window place is become with horizontal direction is a Brewster's angle.The vertical view of vacuum cap as shown in Figure 3.The profile of vacuum cap is shown in Fig. 4 a, the below of vacuum cap sidewall lower edge 103 has a groove, be plugged with sealing ring 104 (shown in Fig. 4 b) in the groove, wherein when vacuum cap combines with pedestal, the sealing circle contacts with base-plates surface, so vacuum cap, sealing ring and pedestal form the good vacuum chamber of sealing 105 together.In order to be more readily understood the structure of vacuum cap described in the invention, Fig. 5, Fig. 6 show a pictorial diagram of vacuum cap, and this pictorial diagram is the wherein a kind of structure according to the embodiment of the invention, and should not be understood that the qualification to vacuum cap structure of the present invention.
Wherein the structure of pedestal 201 as shown in Figure 7, the susceptor edge that comprises columned base station 201 and annular is along 202.Wherein the upper surface of base station 201 has four and perforation 111 corresponding screws 204 along its circumference.Susceptor edge is evenly distributed with four fixing holes 203 along its circumference of 202 upper edges, is used for pedestal is fixed in optical table, and fixing hole 203 is stepped (as shown in Figure 8).
Before the use, laser beam emitting device is installed on the pedestal, position relation between each parts as shown in Figure 9, with coated with thermally conductive silicone grease on the upper surface of pedestal 200, and on heat-conducting silicone grease, place conductor refrigeration sheet 303, coated with thermally conductive silicone grease above conductor refrigeration sheet 303, laser aligner base 302 is placed in conductor refrigeration sheet 303 tops then, install laser aligner 301 in the circular hole of laser aligner base 302 in advance, install the non-spherical lens of laser tube and collimation usefulness in the laser aligner in advance.Figure 10 is the end view of device shown in Figure 9, and as shown in figure 10, laser aligner base 302 has dug a thermometer hole 304 (as shown in figure 11) near the position of laser tube, is used to place thermistor, and uses the heat conductive silica gel landfill.Figure 11 is the vertical view of device shown in Figure 9.After conductor refrigeration sheet, laser aligner base, laser aligner placed by above-mentioned position relation, adjust the light direction of laser tube, it can be penetrated by light-emitting window of vacuum cap.
During use, with the Teflon electric wire electrical cable of laser tube, thermistor, conductor refrigeration sheet is received on the vacuum connector assembly of vacuum cap (the vacuum connector assembly is installed in the connector assembly hole 110 of vacuum cap in advance).Then vacuum cap 100 is positioned over (as shown in Figure 1) on the pedestal 200, cover the laser aligner base, and perforation 111 is alignd with screw 204, and pass to bore a hole with four screws and be screwed in the screw, thereby vacuum cap is fixed on the pedestal, and this moment, sealing ring was pressed between vacuum cap and the pedestal.By threeway vacuum interface and vacuum pump are coupled together, be evacuated to about the 10-1 handkerchief, shut vacuum interface, and stop vacuum pump with vacuum valve.In this way, laser tube is in the environment of vacuum.With four cables vacuum plug and external control circuit and power supply are coupled together, thus the temperature of control conductor refrigeration sheet, and provide electric current for laser tube.
After the sealing device of above-mentioned semiconductor laser vacuumized, under the effect of atmospheric pressure, sealing ring between vacuum cap and the pedestal is further compressed, thereby vacuum cap and pedestal are closely linked together by sealing ring, form the vacuum chamber of good seal, therefore can prevent under the low temperature at the laser tube surface sweating, and temperature is even lower, can be cooled to subzero below 30 degrees centigrade, thereby can change the laser tube wavelength on a large scale, the vacuum environment that provides of sealing device can effectively be avoided temperature drift in addition, can also dust-separation, thus prolong life-span of laser tube.
Because the angle that become with horizontal direction of light-emitting window is a Brewster's angle, the transmitance of the line polarisation that comes out from laser tube can be reached more than 98%.
When regulating zlasing mode, open vacuum cap after, laser is exposed on the pedestal, without any blocking, is easy to regulate, and especially concerning the laser of exocoel frequency stabilization type, extraordinary adjusting space is arranged.
Though laser sealing device of the present invention possesses the ability that vacuumizes, build is small and exquisite, can place on the optical table flexibly to use.
According to still another embodiment of the invention, the vacuum cap of laser sealing device can be processed by standard-sized steel pipe cylinder, and pedestal can be processed by standard-sized aluminium bar, take temperature from the work of processing, than being processed into cuboid or rectangular chamber, technology is simple, the efficient height.
According to still another embodiment of the invention, in the laser sealing device, can be in the same place by solder bond in vacuum cap top, vacuum cap sidewall and sidewall lower edge, also can vacuum cap be formed as one by methods such as casting.Vacuum cap also can be made by other metals.Pedestal also can be made by aluminium block or other metal derbies, metal bar.
According to still another embodiment of the invention, the vacuum cap of laser sealing device and pedestal also can be other shapes, for example are rectangle, as long as vacuum cap and pedestal can surround an airtight cavity, wherein sealing ring can be a rubber ring.
Laser sealing device provided by the invention can be used for frequency locking laser that scientific research uses, injection locking from laser, exocoel frequency stabilization formula laser etc.
For example, when doing the experiment of rubidium 85 atoms, the D1 line transition that use rubidium 85, the wavelength of D1 line is 795nm, and laser power need be than higher, but retrievable laser tube is all away from this wavelength on the market, and the 808nm laser tube of 200mW can be easy to very cheap obtaining.So, the 808nm laser tube of 200mW is cooled to subzero 28 degree, can obtain the 795nm laser of the good model of 200mW.
Again for example, when doing the experiment of potassium 39 atoms, the D2 line transition that use potassium 39, the wavelength of D2 line is 767nm, same laser power need be than higher, but retrievable laser tube is all away from this wavelength on the market, and the 780nm laser tube of 200mW can be easy to very cheap obtaining.So the 780nm laser tube of 200mW is cooled to subzero 30 degree, can obtain the 767nm laser of the good model of 200mW.
It should be noted last that above embodiment is only unrestricted in order to technical scheme of the present invention to be described.Although the present invention is had been described in detail with reference to embodiment, those of ordinary skill in the art is to be understood that, technical scheme of the present invention is made amendment or is equal to replacement, do not break away from the spirit and scope of technical solution of the present invention, it all should be encompassed in the middle of the claim scope of the present invention.
Claims (10)
1. the sealing device of semiconductor laser is characterized in that comprising:
Vacuum cap has outward extending lower edge, and the below of lower edge has a groove, is plugged with sealing ring in the groove;
Pedestal contacts with vacuum cap by sealing ring, and pedestal surrounds vacuum chamber with vacuum cap.
2. sealing device according to claim 1 is characterized in that described vacuum cap is made of circular top and cylindrical sidewall, and described lower edge is an annular, is positioned at the sidewall below.
3. sealing device according to claim 1 is characterized in that, has the light pipe of going out on the described vacuum cap, and the end that goes out light pipe has light-emitting window, and the angle that the plane at light-emitting window place is become with horizontal direction is a Brewster's angle.
4. sealing device according to claim 1 is characterized in that, described vacuum cap has vacuum interface and connector assembly hole.
5. sealing device according to claim 1 is characterized in that, described pedestal is made of base station and susceptor edge edge.
6. sealing device according to claim 1 is characterized in that, described base station is cylindric, and described susceptor edge is along being ring-type, susceptor edge along on have a plurality of stair-stepping fixing holes.
7. sealing device according to claim 1 is characterized in that, described vacuum cap has a plurality of perforation on the lower edge, and pedestal upper surface has a plurality of screws corresponding with perforation, screw is passed perforation be screwed in the screw, and vacuum cap is fixedlyed connected with pedestal.
8. laser device comprises that described laser device comprises as the described arbitrary sealing device of claim 1 to 7:
Chiller;
Laser beam emitting device;
Temperature measuring equipment;
The vacuum connector assembly is arranged in vacuum cap connector assembly hole, and wherein chiller, laser beam emitting device and temperature measuring equipment are arranged in described vacuum chamber.
9. laser device according to claim 8 is characterized in that laser beam emitting device comprises laser aligner base, laser aligner, laser tube and non-spherical lens.
10. laser device according to claim 8 is characterized in that, described chiller is the conductor refrigeration sheet, and described temperature measuring equipment is a thermistor.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201010570383 CN102055132A (en) | 2010-11-26 | 2010-11-26 | Semiconductor laser device capable of deep cooling and sealing device thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201010570383 CN102055132A (en) | 2010-11-26 | 2010-11-26 | Semiconductor laser device capable of deep cooling and sealing device thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN102055132A true CN102055132A (en) | 2011-05-11 |
Family
ID=43959221
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 201010570383 Pending CN102055132A (en) | 2010-11-26 | 2010-11-26 | Semiconductor laser device capable of deep cooling and sealing device thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN102055132A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103474865A (en) * | 2013-09-27 | 2013-12-25 | 北京无线电计量测试研究所 | Device used for cooling sheet-shaped laser gain media |
| CN104112981A (en) * | 2013-04-18 | 2014-10-22 | 中国科学院物理研究所 | Cooling device for semiconductor laser device |
| CN107768975A (en) * | 2017-09-26 | 2018-03-06 | 杭州中科极光科技有限公司 | A kind of cooling system |
| CN110970788A (en) * | 2019-10-23 | 2020-04-07 | 南京理工大学 | Lens cooling device of optical gate for optical fiber laser |
| CN112103765A (en) * | 2020-11-13 | 2020-12-18 | 深圳市星汉激光科技有限公司 | Semiconductor laser |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20010019565A1 (en) * | 2000-03-03 | 2001-09-06 | Tatsuya Iwasaki | Electron-beam excitation laser |
| CN1655342A (en) * | 2003-09-15 | 2005-08-17 | 罗姆和哈斯电子材料有限责任公司 | Device package and methods for the fabrication and testing thereof |
| CN1710762A (en) * | 2005-06-29 | 2005-12-21 | 武汉电信器件有限公司 | Method for raising semiconductor laser yield |
-
2010
- 2010-11-26 CN CN 201010570383 patent/CN102055132A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20010019565A1 (en) * | 2000-03-03 | 2001-09-06 | Tatsuya Iwasaki | Electron-beam excitation laser |
| CN1655342A (en) * | 2003-09-15 | 2005-08-17 | 罗姆和哈斯电子材料有限责任公司 | Device package and methods for the fabrication and testing thereof |
| CN101079387A (en) * | 2003-09-15 | 2007-11-28 | 罗姆和哈斯电子材料有限责任公司 | Device package and methods for the fabrication and testing thereof |
| CN1710762A (en) * | 2005-06-29 | 2005-12-21 | 武汉电信器件有限公司 | Method for raising semiconductor laser yield |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104112981A (en) * | 2013-04-18 | 2014-10-22 | 中国科学院物理研究所 | Cooling device for semiconductor laser device |
| CN103474865A (en) * | 2013-09-27 | 2013-12-25 | 北京无线电计量测试研究所 | Device used for cooling sheet-shaped laser gain media |
| CN107768975A (en) * | 2017-09-26 | 2018-03-06 | 杭州中科极光科技有限公司 | A kind of cooling system |
| CN110970788A (en) * | 2019-10-23 | 2020-04-07 | 南京理工大学 | Lens cooling device of optical gate for optical fiber laser |
| CN112103765A (en) * | 2020-11-13 | 2020-12-18 | 深圳市星汉激光科技有限公司 | Semiconductor laser |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN102055132A (en) | Semiconductor laser device capable of deep cooling and sealing device thereof | |
| JP5745519B2 (en) | Radio frequency (RF) ground feedback configuration | |
| US9014226B2 (en) | Crystal laser comprising a system for cooling the crystal with a fluid | |
| US20050145341A1 (en) | Plasma processing apparatus | |
| US20140375202A1 (en) | Led bulb | |
| CN202586075U (en) | High-speed coaxial package refrigeration type laser assembly | |
| US7191823B2 (en) | Optoelectronic module and a thermal switch therefor | |
| Zhdanov et al. | Continuous wave Cs diode pumped alkali laser pumped by single emitter narrowband laser diode | |
| CN202025979U (en) | LD (laser diode) pump full-solid state green-light laser | |
| US6837059B2 (en) | Temperature adjustment device and laser module | |
| WO2011154405A1 (en) | A tunable laser system | |
| CN204290031U (en) | A kind of high power semiconductor lasers encapsulating structure | |
| CN104112981A (en) | Cooling device for semiconductor laser device | |
| TW201617578A (en) | Vapor chamber | |
| CN210039814U (en) | Pluggable binary current lead device and cooling container thereof | |
| CN204615150U (en) | Based on the low drifting laser attemperating unit of double T EC | |
| Chen et al. | High power and high efficiency kW 88x-nm multi-junction pulsed diode laser bars and arrays | |
| CN112310798A (en) | Semiconductor laser heat abstractor | |
| CN207638140U (en) | A kind of cooling structure for high power pump source | |
| CN206421244U (en) | A kind of temperature control equipment of microlaser | |
| CN212626506U (en) | Two-phase immersed heat dissipation device of optical fiber laser | |
| CN110415911B (en) | Pluggable binary current lead device and cooling container thereof | |
| US20150303652A1 (en) | Temperature Controllable High Bit Rate Laser Diode | |
| CN210536004U (en) | Semiconductor laser heat abstractor | |
| Hou et al. | High power multiple wavelength diode laser stack for DPSSL application without temperature control |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20110511 |