CN102034719A - TO-CAN coaxial small-sized packaging method for PIN-FET high-sensitivity detector - Google Patents

TO-CAN coaxial small-sized packaging method for PIN-FET high-sensitivity detector Download PDF

Info

Publication number
CN102034719A
CN102034719A CN201010517904.3A CN201010517904A CN102034719A CN 102034719 A CN102034719 A CN 102034719A CN 201010517904 A CN201010517904 A CN 201010517904A CN 102034719 A CN102034719 A CN 102034719A
Authority
CN
China
Prior art keywords
chip
base
heat sink
welded
ceramic heat
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CN201010517904.3A
Other languages
Chinese (zh)
Other versions
CN102034719B (en
Inventor
詹敦平
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
JIANGSU FIBER GRID CO Ltd
Original Assignee
JIANGSU FIBER GRID CO Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by JIANGSU FIBER GRID CO Ltd filed Critical JIANGSU FIBER GRID CO Ltd
Priority to CN201010517904A priority Critical patent/CN102034719B/en
Publication of CN102034719A publication Critical patent/CN102034719A/en
Application granted granted Critical
Publication of CN102034719B publication Critical patent/CN102034719B/en
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Landscapes

  • Gyroscopes (AREA)

Abstract

The invention relates to a method for manufacturing a semiconductor photoelectric device for an inertial navigation system, in particular to a TO-CAN coaxial small-sized packaging method for a PIN-FET high-sensitivity detector. The method comprises the following steps that: a, the surface of a TO-CAN base made of an iron, nickel and cobalt alloy material is gilded and a heat-conductive Case point is arranged on a TO-CAN base welded with a ceramic heat sink; b, the surface of the ceramic heat sink is gilded by a thin-film sputtering method, and the ceramic heat sink is welded on the TO-CAN base by epoxy resin solder; c, an integrated chip, a detector PD chip and a filter capacitor are welded on the TO-CAN base by the epoxy resin solder; and d, a connecting chip is connected with an external connecting lead by welding a gold wire. Three fragmented components of FET, PNP and NPN are integrated on a chip, so that the device small in size is conveniently packaged into a TO-CAN coaxial small-sized device, and has the advantages of small size and low power consumption compared with the device packaged by the traditional butterfly packaging method.

Description

The coaxial miniaturization method for packing of PIN-FET highly-sensitive detector TO-CAN
Technical field
The present invention relates to be used for the semiconductor photoelectric device manufacturing of inertial navigation system, specifically is the coaxial miniaturization method for packing of a kind of PIN-FET highly-sensitive detector TO-CAN.
Background technology
At present, more and more higher for the inertial navigation optic fiber gyroscope to the requirement of miniaturization, and existing photoelectric device can't satisfy the instructions for use of the overall volume miniaturization of optic fiber gyroscope.
Summary of the invention
The present invention wants the technical solution problem to be, provides a kind of and can reduce the volume of photoelectric device, the coaxial miniaturization method for packing of PIN-FET highly-sensitive detector TO-CAN of reduction power consumption.
Method of the present invention is:
A. gold-plated to the TO-CAN susceptor surface of teleoseal material, welding the Case point that is provided for heat conduction on the TO-CAN base of ceramic heat sink;
B. adopt thin film sputtering technology to the ceramic heat sink surface gold-plating; Adopt the epoxy resin scolder that ceramic heat sink is welded on the TO-CAN base;
C. adopt the conductive epoxy resin scolder to be welded on the TO-CAN base integrated chip, detector PD chip, filter capacitor;
D. carry out the spun gold weldering, connect chip in succession and connect lead outward.
Method of the present invention has satisfied the requirement of Performance And Reliability simultaneously, its realize miniaturization the most key the discrete component on the ceramic circuit board to be integrated in one be on the integrated chip of substrate with the GaAs with exactlying, the excessive problem of volume of solution discrete component.Because FET, PNP, these three discrete components and parts of NPN are integrated on the chip, thereby its volume urinates in being packaged into the coaxial miniaturization of TO-CAN, and it is little, low in energy consumption that traditional relatively butterfly encapsulates its volume.
Embodiment
The method of the embodiment of the invention is:
A. gold-plated to the TO-CAN susceptor surface of teleoseal material, welding the Case point that is provided for heat conduction on the TO-CAN base of ceramic heat sink;
B. adopt thin film sputtering technology to the ceramic heat sink surface gold-plating; Adopt the epoxy resin scolder that ceramic heat sink is welded on the TO-CAN base;
C. adopt the conductive epoxy resin scolder to be welded on the TO-CAN base integrated chip, detector PD chip, filter capacitor;
D. carry out the spun gold weldering, connect chip in succession and connect lead outward.
The device volume that inventive method of the present invention obtains is equivalent to 30% of traditional devices volume, thereby makes that the overall volume of inertial navigation optic fiber gyroscope is littler, is convenient to be equipped in more on the polytypic, and is low-cost simultaneously.

Claims (1)

1. coaxial miniaturization method for packing of PIN-FET highly-sensitive detector TO-CAN is characterized in that:
A. gold-plated to the TO-CAN susceptor surface of teleoseal material, welding the Case point that is provided for heat conduction on the TO-CAN base of ceramic heat sink;
B. adopt thin film sputtering technology to the ceramic heat sink surface gold-plating; Adopt the epoxy resin scolder that ceramic heat sink is welded on the TO-CAN base;
C. adopt the conductive epoxy resin scolder to be welded on the TO-CAN base integrated chip, detector PD chip, filter capacitor;
D. carry out the spun gold weldering, connect chip in succession and connect lead outward.
CN201010517904A 2010-10-25 2010-10-25 TO-CAN coaxial small-sized packaging method for PIN-FET high-sensitivity detector Expired - Fee Related CN102034719B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201010517904A CN102034719B (en) 2010-10-25 2010-10-25 TO-CAN coaxial small-sized packaging method for PIN-FET high-sensitivity detector

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201010517904A CN102034719B (en) 2010-10-25 2010-10-25 TO-CAN coaxial small-sized packaging method for PIN-FET high-sensitivity detector

Publications (2)

Publication Number Publication Date
CN102034719A true CN102034719A (en) 2011-04-27
CN102034719B CN102034719B (en) 2012-09-19

Family

ID=43887427

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201010517904A Expired - Fee Related CN102034719B (en) 2010-10-25 2010-10-25 TO-CAN coaxial small-sized packaging method for PIN-FET high-sensitivity detector

Country Status (1)

Country Link
CN (1) CN102034719B (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102437245A (en) * 2011-12-20 2012-05-02 江苏飞格光电有限公司 Optical transceiver component TO coaxial miniaturized packaging method
CN102699623A (en) * 2012-06-06 2012-10-03 滁州金科机械模具制造有限公司 Sealing and bonding process of temperature controller power part
CN102780157A (en) * 2012-07-06 2012-11-14 江苏飞格光电有限公司 Chip patching system of semiconductor laser and patching method

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1846466A (en) * 2003-09-04 2006-10-11 菲尼萨公司 Laser monitoring and control in a transmitter optical subassembly having a ceramic feedthrough header assembly
CN101499461A (en) * 2008-01-31 2009-08-05 前源科技股份有限公司 Photoelectric element and optical sub-module employing the same

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1846466A (en) * 2003-09-04 2006-10-11 菲尼萨公司 Laser monitoring and control in a transmitter optical subassembly having a ceramic feedthrough header assembly
CN101499461A (en) * 2008-01-31 2009-08-05 前源科技股份有限公司 Photoelectric element and optical sub-module employing the same

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102437245A (en) * 2011-12-20 2012-05-02 江苏飞格光电有限公司 Optical transceiver component TO coaxial miniaturized packaging method
CN102699623A (en) * 2012-06-06 2012-10-03 滁州金科机械模具制造有限公司 Sealing and bonding process of temperature controller power part
CN102699623B (en) * 2012-06-06 2014-12-03 滁州金科机械模具制造有限公司 Sealing and bonding process of temperature controller power part
CN102780157A (en) * 2012-07-06 2012-11-14 江苏飞格光电有限公司 Chip patching system of semiconductor laser and patching method

Also Published As

Publication number Publication date
CN102034719B (en) 2012-09-19

Similar Documents

Publication Publication Date Title
TW201133769A (en) Semiconductor device and method of forming open cavity in TSV interposer to contain semiconductor die in WLCSMP
SG130066A1 (en) Microelectronic device packages, stacked microelectronic device packages, and methods for manufacturing microelectronic devices
EP2775523A1 (en) Chip on chip attach (passive IPD and PMIC) flip chip BGA using new cavity BGA substrate
TW201248812A (en) Flip-chip, face-up and face-down centerbond memory wirebond assemblies
US10186488B2 (en) Manufacturing method of semiconductor package and manufacturing method of semiconductor device
TW200834879A (en) Integrated circuit packaging system with interposer
US9147600B2 (en) Packages for multiple semiconductor chips
CN102034719B (en) TO-CAN coaxial small-sized packaging method for PIN-FET high-sensitivity detector
US20190141834A1 (en) Mechanically-compliant and electrically and thermally conductive leadframes for component-on-package circuits
WO2011100351A1 (en) Semiconductor die package structure
US20140225211A1 (en) Solar powered ic chip
US7923847B2 (en) Semiconductor system-in-a-package containing micro-layered lead frame
CN102005695A (en) SLD (super radiation laser) TO-CAN coaxial miniaturized encapsulating method
CN202796904U (en) Encapsulating structure of quantum effect photoelectric detector and read-out circuit
US10109602B2 (en) Package integrated with a power source module
CN215266336U (en) Coaxial photodiode detector
US8778704B1 (en) Solar powered IC chip
JP2014187365A (en) Integrate circuit chip using solar energy as power
CN112312678A (en) Structure and method of non-packaged chip direct-buried printed circuit board and chip packaging structure
WO2009034461A3 (en) Semiconductor device and wire bonding method
US7843048B2 (en) Multi-chip discrete devices in semiconductor packages
CN202382745U (en) PIN-FET (P-Intrinsic-N, Field-Effect Transistor) optical receiving assembly with silica gel packaging
US9570419B2 (en) Method of thinning and packaging a semiconductor chip
CN202058728U (en) Chip combination type semiconductor integrated device
CN201407516Y (en) Light emitting diode reflect ring and combined structure with base plate thereof

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
CP02 Change in the address of a patent holder

Address after: 212009 Zhenjiang province Jiangsu city Zhenjiang district four South Dingmao Road No. 36

Patentee after: JIANGSU FIBER GRID Co.,Ltd.

Address before: No. 1 Jinyang road 212006 in Zhenjiang province Jiangsu City Jingkou Industrial Park

Patentee before: JIANGSU FIBER GRID Co.,Ltd.

CP02 Change in the address of a patent holder
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20120919

Termination date: 20211025

CF01 Termination of patent right due to non-payment of annual fee