CN101499461A - Photoelectric element and optical sub-module employing the same - Google Patents

Photoelectric element and optical sub-module employing the same Download PDF

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Publication number
CN101499461A
CN101499461A CN200810006689.3A CN200810006689A CN101499461A CN 101499461 A CN101499461 A CN 101499461A CN 200810006689 A CN200810006689 A CN 200810006689A CN 101499461 A CN101499461 A CN 101499461A
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CN
China
Prior art keywords
photoelectric cell
photoelectricity
crystal grain
integrated circuit
circuit elements
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CN200810006689.3A
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Chinese (zh)
Inventor
袁荣亨
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Coretek Opto Corp
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Coretek Opto Corp
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Priority to CN200810006689.3A priority Critical patent/CN101499461A/en
Priority to US12/322,085 priority patent/US20090226139A1/en
Publication of CN101499461A publication Critical patent/CN101499461A/en
Pending legal-status Critical Current

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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48135Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/48137Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate

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Abstract

The invention discloses a photoelectric element and an optical sub-module; the photoelectric element comprises a base, an integrated circuit element which is arranged on the base, and a photoelectric grain which is arranged on the integrated circuit element in an overlapping way. The optical sub-module includes a cylinder-shaped part, the photoelectric element, and at least one lens; the cylinder-shaped part comprises a cavity and an optical fiber plug channel; the photoelectric element is arranged in the cavity and has the base, the integrated circuit element and the photoelectric grain; and the lens is configured between the photoelectric element and the optical fiber plug channel, and is opposite to the photoelectric element. The photoelectric element and the integrated circuit element form an overlapping state, optimize the space utilization, are conducive to decreasing the volume of the photoelectric element, and improve the high-frequency characteristics and the product reliability. The optical sub-module can use the integrated circuit element for adjusting the distance between the photoelectric grain and the lens so as to improve the optical coupling efficiency of the optical sub-module, thereby achieving the effect of being easily aligned in a passive way or a coupling way.

Description

Photoelectric cell and use the light time module of this photoelectric cell
Technical field
The present invention relates to a kind of photoelectric cell and a kind of light time module, specifically, relate to a kind of photoelectric cell that for example is used for optical communication, illumination, demonstration purposes, and a kind of light time module of forming by this photoelectric cell and a cylindrical member.
Background technology
Optical communication be utilize light, the electricity conversion and reach the transmitting signals effect.Transmitting terminal and receiving terminal at signal all set a light time module (OSA), and this light time module is a mutual adhesive bond after a cylindrical member (Barrel)/joint chair (Receptacle) and the photoelectric cell coupling optical registration.For optical communication, OSA is that light passes the key part and component that connects in the module (TranseiverModule), and luminous intensity that OSA provided and light coupling efficient decision signal are in the transmission quality and the distance of optical fiber, so OSA sets usually or shape has lens arrangement, or take luminous intensity and the light coupling efficient that luminous intensity is big, the diffusing less photoelectric cell of angle of light reaches lifting OSA.
With the receiving terminal of optical communication, and light signal meeting elder generation arrival one optical detector (Photodetector, PD), to convert photoelectric current to.Next again by one change impedance amplifier (Transimpedance Amplifier, TIA)/(Preamplifier Preamp) is converted to voltage signal with photoelectric current to preamplifier.
As shown in Figure 1, a kind of photoelectric cell 10 of known PIN-TIA framework, it disposes a carrier 14 on a pedestal 12, one photoelectricity crystal grain 16, for example optical detector wafer or light-emitting diode (LED) wafer or laser diode (LD) wafer, group is located on this carrier 14, in order to receive or emission light.The configuration purpose of this carrier 14 is to adjust the distance of this photoelectricity crystal grain 16 and a lens (not shown) of its opposite face, to improve the coupling light effect and to provide one for the routing zone.
In addition, the periphery of photoelectricity crystal grain 16 is equipped with one changes impedance amplifier 17 and at least one collateral branch electric capacity (BypassCapacitor) 18, and their mutual electric connections, utilizes this collateral branch's electric capacity 18 by this and changes the sensitivity that impedance amplifier 17 filters noise and increases signal.
Yet carrier 14, commentaries on classics impedance amplifier 17 and collateral branch's electric capacity 18 take the part area of this pedestal 12 separately, and is comparatively speaking, for the pedestal 12 of reduced size, that the difficulty of each configuration of cells on this pedestal 12 is higher.Following if also will add other unit again, then difficulty is higher.
Summary of the invention
The object of the present invention is to provide a kind of photoelectric cell and use the light time module of this photoelectric cell, this photoelectric cell area occupied is little, the space availability ratio height, high frequency characteristics is good, product is reliable, and light time module can improve the light coupling efficient of self by adjusting the spacing of (or shortening) photoelectric cell and lens, easy passive aligning or be coupled and aligned.
In order to achieve the above object, the present invention has adopted following technical scheme:
A kind of photoelectric cell is characterized in that, it comprises: a pedestal; One integrated circuit elements, this integrated circuit elements are provided on this pedestal; One photoelectricity crystal grain, this photoelectricity crystal grain is folded to be located on this integrated circuit elements.
A kind of light time module, it is characterized in that it comprises: a cylindrical member, this cylindrical member have a chamber and an Optical fiber plug passage; One photoelectric cell, this photoelectric cell group is located in this chamber, and this photoelectric cell has a pedestal, and an integrated circuit elements group is located on this pedestal, and a photoelectricity crystal grain is folded to be located on this integrated circuit elements; At least one lens, this lens configuration is between this photoelectric cell and this Optical fiber plug passage, and these lens are relative with this photoelectric cell.This cylindrical member pattern can be SC, ST and LC.
A kind of photoelectric cell that is used for optical communication is characterized in that it comprises: a pedestal; One integrated circuit elements, this integrated circuit elements are provided on this pedestal; One photoelectricity crystal grain, this photoelectricity crystal grain is folded to be located on this integrated circuit elements, in order to emission or reception light signal.
Advantage of the present invention is:
Because photoelectric cell of the present invention is with photoelectricity crystal grain and integrated circuit elements, or cooperate a carrier, be located on the pedestal with stacked framework group, thereby, the entire combination area occupied is less, for example help that other element groups of collateral branch's electric capacity are located on pedestal or the integrated circuit elements, optimized space availability ratio.For dwindling for the design of TO-can size, the size that photoelectric cell of the present invention helps the TO-56 (diameter 5.6mm) that tradition is commonly used shortens the specification than small-diameter sized, for example TO-38 (diameter 3.8mm) into.Photoelectric cell of the present invention then has the effect that reduces cost of manufacture if do not use carrier.And because each electrode spacing on integrated circuit elements and the pedestal is suitable, compared to known photoelectric cell structure, the framework among the present invention can make the routing distance of each electrode on integrated circuit elements and the pedestal dwindle, and increases the high frequency characteristics of element.In addition, photoelectric cell of the present invention is folded photoelectricity crystal grain and is located on the integrated circuit elements, because properties of materials is close each other, makes the stress that assembly produced reduce, thereby can improve the reliability of product.Because photoelectric cell of the present invention forms stacked configuration, so take the less area of pedestal, helps to use the pedestal of reduced size.
Because the lens of light of the present invention time module can extend near photoelectricity crystal grain, so do not need carrier also can reach high light coupling efficient.If there is not carrier, then cost of manufacture is low, and can minus processing procedure and the space that carrier is set.And, integrated circuit elements and photoelectricity crystal grain are combined stacked structure, help to make the photoelectric cell miniaturization, thereby the size of light time module diminishes also.In addition, another embodiment of photoelectric cell forms the folded form of establishing with photoelectricity crystal grain, integrated circuit elements and carrier, therefore, for the light that uses this photoelectric cell and cylindrical member to form time module, carrier can be in order to adjust the distance between photoelectricity crystal grain and the lens.In a word, light time module can extend and the pad glove spare of photoelectricity crystal grain below be adjusted the spacing of (or shortening) photoelectric cell and lens by lens arrangement, thus the effect that reaches raising light coupling efficient and easy passive aligning or be coupled and aligned.In addition; owing in cylindrical member, can fill index-matching oil; so the light that photoelectricity crystal grain is sent can further be restrained, also can fill or the coating colloid, in order to protection component and retaining element at periphery, the surface of photoelectricity crystal grain and integrated circuit elements.
Description of drawings
Fig. 1 is an arrangements of components schematic diagram of commonly using photoelectric cell;
Fig. 2 A is a structural representation of the present invention;
Fig. 2 B is a structural representation of the present invention;
Fig. 2 C is another structural representation of the present invention;
Fig. 3 A is a TO-can structural representation of the present invention;
Fig. 3 B is a TO-can structural representation of the present invention;
Fig. 3 C is a TO-can structural representation of the present invention;
Fig. 3 D is a TO-can structural representation of the present invention;
Fig. 3 E is a TO-can structural representation of the present invention;
Fig. 4 A is a conducting wire frame structure schematic diagram of the present invention;
Fig. 4 B is a conducting wire frame structure schematic diagram of the present invention;
Fig. 4 C is a conducting wire frame structure schematic diagram of the present invention;
Fig. 4 D is a conducting wire frame structure schematic diagram of the present invention;
Fig. 5 A is the structural representation that lead frame of the present invention has metal chassis;
Fig. 5 B is the structural representation that lead frame of the present invention has the plastic cement chassis;
Fig. 6 A is that photoelectricity crystal grain homonymy of the present invention has the schematic diagram that two electrodes combine with integrated circuit elements;
Fig. 6 B is that photoelectricity crystal grain homonymy of the present invention has the schematic diagram that two electrodes combine with integrated circuit elements;
Fig. 7 A is the schematic diagram that photoelectricity crystal grain of the present invention combines with integrated circuit elements with Flip Chip;
Fig. 7 B is the schematic diagram that photoelectricity crystal grain of the present invention combines with integrated circuit elements with Flip Chip;
Fig. 8 A is that photoelectricity crystal grain opposite side of the present invention has the schematic diagram that electrode combines with integrated circuit elements;
Fig. 8 B is that photoelectricity crystal grain opposite side of the present invention has the schematic diagram that electrode combines with integrated circuit elements;
Fig. 9 is that the present invention sets collateral branch's electric capacity and photoelectricity crystal grain forms the structural representation that electrically connects;
Figure 10 is the cylindrical member structural representation of institute of the present invention adapted;
Figure 11 is a light of the present invention time module structural representation;
Figure 12 A is the structural representation of the inner tool index-matching oil of light of the present invention time module;
Figure 12 B is the structural representation of the inner tool index-matching oil of light of the present invention time module;
Figure 13 A is the structural representation that light of the present invention time module inside has colloid;
Figure 13 B is the structural representation that light of the present invention time module inside has colloid;
Figure 13 C is the structural representation that light of the present invention time module inside has colloid;
Figure 13 D is the structural representation that light of the present invention time module inside has colloid;
Figure 14 is that the present invention cooperates the light time module structural representation that cylindrical member was constituted with the lead frame photoelectric cell;
Figure 15 is the structural representation that the present invention is equipped with two photoelectricity crystal grain.
Embodiment
Photoelectric cell of the present invention is applicable to optical communication, illumination or shows purposes.This photoelectric cell is a kind of photoelectric cell that does not have conventional carriers.This photoelectric cell has at least one photoelectricity crystal grain, for example light-emitting diode (Light-emitting Diode, LED) wafer, laser diode (Laser Diode, LD) wafer or optical detector (Photodiode, PD) wafer.The photoelectric cell of using with optical-fibre communications is an example, this photoelectricity wafer can be applicable to the optical-fibre communications of glass optical fiber, in order to emission or receive the infrared ray signal of 800nm~1800nm, or be applied to the optical-fibre communications of fiber optic fibers, plastic, in order to emission or receive the visible light signal of 200nm~800nm.
Shown in Fig. 2 A and Fig. 2 B, photoelectric cell 20 comprises that a pedestal (Base) 22, one integrated circuit elements 24 are provided in this pedestal 22 surfaces, a photoelectricity crystal grain 26 folded end faces that are located at this integrated circuit elements 24.By above-mentioned framework as can be known, this integrated circuit elements 24 can be used as the following fixture of this photoelectricity crystal grain 26, and this integrated circuit elements 24 can be in order to the position (highly) of adjusting this photoelectricity crystal grain 26.
This integrated circuit elements 24 be one change impedance amplifier (TIA), a post-amplifier or drives integrated circuit, this integrated circuit elements 24 also can be to change the composition element that impedance amplifier, post-amplifier, driving integrated circuit are worked in coordination and formed.Wherein, post-amplifier is amplified to a stabilized amplitude in order to the differential voltage signal that will change impedance amplifier and produce, and drives integrated circuit in order to the power supply that drives LD or LED to be provided.
In the foregoing description, with the following fixture of this integrated circuit elements 24 as this photoelectricity crystal grain 26, in addition, in Fig. 2 C, set a carrier 25 in this integrated circuit elements 24 and 22 of pedestals, so, uses of arranging in pairs or groups mutually of this carrier 25 and this integrated circuit elements 24, the position (highly) of using this photoelectricity crystal grain 26 of adjustment.
As shown in Figure 3A, the periphery of this pedestal 22 does not have casing component, so the periphery of this photoelectricity crystal grain 26 and this integrated circuit elements 24 forms open shape space.
Shown in Fig. 3 B, the circumferential arrangement of this pedestal 22 has a metal shell 32, and these shell 32 1 ends have an opening 34, and this opening 34 is relative with this photoelectricity crystal grain 26 on this integrated circuit elements 24.
Shown in Fig. 3 C, this pedestal 22 circumferential arrangement one metal shell 32, and these shell 32 1 ends have a sphere lens 36, and this sphere lens 36 is relative with this photoelectricity crystal grain 26.
Shown in Fig. 3 D, this pedestal 22 circumferential arrangement one metal shell 32, and these shell 32 1 ends have a plate glass 37, and this plate glass 37 is relative with this photoelectricity crystal grain 26.
Shown in Fig. 3 E, this pedestal 22 circumferential arrangement one metal shell 32, and these shell 32 1 ends have lens component 38, and this lens component 38 is relative with this photoelectricity crystal grain 26.
The pedestal 22 of above Fig. 3 A to Fig. 3 E is the metab (header) of the photoelectric cell of TO-can (top end opening metal-back) structure.
Shown in Fig. 4 A, this photoelectric cell 20 is lead frame (Leadframe) structure, and it has a plurality of metallic supports (shown in the figure two), and wherein, the end 44 of a support 42 is in order to as this pedestal 22.So, this integrated circuit elements is located on this end 44 for 24 groups, and these photoelectricity crystal grain 26 folded being located on this integrated circuit elements 24.In addition, this lead frame does not have shell or outer package body, so form open shape space around this photoelectricity crystal grain 26.
Shown in Fig. 4 B, conducting wire frame structure can set the end that an outer package body 46, one openings 48 are formed on this outer package body 46, and this opening 48 is relative with this photoelectricity crystal grain 26.
Shown in Fig. 4 C, conducting wire frame structure is equipped with an outer package body 46, and this outer package body 46 coats this photoelectricity crystal grain 26 and this integrated circuit elements 24 fully.
Shown in Fig. 4 D, conducting wire frame structure is equipped with an outer package body 46, and this outer package body 46 coats this photoelectricity crystal grain 26 and this integrated circuit elements 24 fully, in addition, one lens section 49 is formed on this outer package body 46 surfaces, and this lens section 49 is relative with this photoelectricity crystal grain 26.
Shown in Fig. 5 A, another kind of conducting wire frame structure is a metal chassis 52, and its formation or group are located at an end of a plurality of supports (two stands shown in the figure) 42 and 43.This metal chassis 52 can be used as aforesaid pedestal 22.So, this integrated circuit elements is located on this metal chassis 52 for 24 groups, and this photoelectricity crystal grain 26 is stacked on this integrated circuit elements 24.
Shown in Fig. 5 B, a plastic cement chassis 54 forms or organizes an end that is located at a plurality of supports (two stands shown in the figure) 42 and 43.This plastic cement chassis 54 can be used as aforesaid pedestal 22.So, this integrated circuit elements is located on this chassis 54 for 24 groups, and this photoelectricity crystal grain 26 is stacked on this integrated circuit elements 24.
This conducting wire frame structure goes out in the processing procedure on this plastic cement chassis 54 at ejection formation, also can ejection formation one shell, and this shell combines with this plastic cement chassis 54.During encapsulation, this photoelectricity crystal grain 26 is located in this shell by group.
Above Fig. 3 A to Fig. 3 E, Fig. 4 A to Fig. 4 B and Fig. 5 A to Fig. 5 B are in order to illustrate the photoelectricity crystal grain 26 folded frameworks that are located at this integrated circuit elements 24 of the present invention, and these frameworks are applicable to various forms of TO-can elements and lead frame element.
According to the mask pattern structure of heap of stone of this photoelectricity crystal grain 26 and the formation position framework of electrode or wire pad, the present invention is distinguished into two classes with photoelectricity crystal grain 26, first wire pad or electrode are positioned at the same side of photoelectricity crystal grain 26, and it two is that two electrodes or wire pad are positioned at opposite side.
Shown in Fig. 6 A and Fig. 6 B, these photoelectricity crystal grain 26 folded surfaces that are located at this integrated circuit elements 24 shown in the figure, for example, this integrated circuit elements 24 is for changeing the situation of impedance amplifier.Wherein, a side of this photoelectricity crystal grain 26 has two electrodes (wire pad zone) 61 and 62.In addition, the opposite side of this photoelectricity crystal grain 26 has a substrate (substrate) 64, for example semi-insulating or ceramic substrate, these substrate 64 coordinated insulation glue 65 cement on this integrated circuit elements 24, make on this electrode (wire pad zone) 61 and 62 directions that are positioned at away from this integrated circuit elements 24 surfaces.
Shown in Fig. 7 A and Fig. 7 B, the photoelectricity crystal grain 26 among the figure combines to cover crystalline substance (Flip chip) technology with this integrated circuit elements 24.Wherein, two electrodes 71 and 72 of this photoelectricity crystal grain 26 are positioned at the same side, and by the bonding of the electrode on conducting resinl 74 and this integrated circuit elements 24, electrically connect to form.
Shown in Fig. 8 A and Fig. 8 B, the photoelectricity crystal grain 26 among the figure is vertical framework, and promptly two electrodes 81 lay respectively at relative both sides with 82.Wherein, one electrode 81 cooperates elargol 84 and these integrated circuit elements 24 bondings, and on another electrode (wire pad zone) 82 directions that are positioned at away from this integrated circuit elements 24 surfaces, the mat lead connects this electrode 82, electrically connects so that this photoelectricity crystal grain 26 forms with this integrated circuit elements 24.
As shown in Figure 9, in fact, this photoelectricity crystal grain 26 only takies the local area of this integrated circuit elements 24, so a passive device 86, for example elements such as electric capacity, resistance, inductance can be provided on this integrated circuit elements 24.The electrode of above-mentioned passive device 86 can be produced on surface, the same side, or opposite side.With electric capacity is example, and it can be the electric capacity of SMD framework, or twin lamella (Dual-Chip) electric capacity.
Except passive device 86 can being provided on this integrated circuit elements 24, also active member can be provided on this integrated circuit elements 24, this active member was for example once received diode (Zener Diode).
Above-mentioned passive or active member provides a kind of function in anti-surging, transformation, rectification, voltage stabilizing, sensing, feedback circuit or the impedance matching, and these comprehensive functions perhaps are provided.
As shown in figure 15, be equipped with two photoelectricity crystal grain 26 and 27 on this pedestal 22 (can be the base of TO-can or the support of lead frame), for example a LED wafer (or laser diode) and the adjacent pendulum of an optical detector wafer are together, this commentaries on classics impedance amplifier (or can comprise this post-amplifier again) and this drive IC are then integrated the integrated circuit elements 24 of making an IC form, and this integrated circuit elements 24 is arranged on the below of two these photoelectricity crystal grain 26 and 27.
As shown in the above description, photoelectric cell 20 of the present invention is with this photoelectricity crystal grain 26 and this integrated circuit elements 24, or cooperate a carrier 25, be located on this pedestal 22 with stacked framework group, therefore, whole combination takies less area, and for example helping, other element groups of collateral branch's electric capacity 18 are located on this pedestal 22 or this integrated circuit elements 24.For dwindling for the design of TO-can size, the size that the present invention helps the TO-56 (diameter 5.6mm) that tradition is commonly used shortens the specification than small-diameter sized, for example TO-38 (diameter 3.8mm) into.In addition, the present invention then has the effect that reduces cost of manufacture if do not use carrier 25.
And, each electrode spacing on this integrated circuit elements 24 and the pedestal 22 is suitable, compared to known photoelectric cell structure, the framework among the present invention can make the routing distance of each electrode on this integrated circuit elements 24 and the pedestal 22 dwindle, and increases the high frequency characteristics of element.
In addition, the present invention because properties of materials is close each other, makes photoelectricity crystal grain 26 folded being located on the integrated circuit elements 24 stress that assembly produced reduce, thereby can improve the reliability of product.
As shown in figure 10, the structure of cylindrical member 90 is shown in (A)~(D) among Figure 10.This cylindrical member 90 has a chamber 94 and an Optical fiber plug passage 96.Wherein, figure (A) also forms a holding channel 93 between this chamber 94 and this Optical fiber plug passage 96, and lens are located in this holding channel 93 for 99 groups.In addition, remaining cylindrical member 90 has one or two lens 91 and 92 respectively.In addition, lens 91 and 92 are respectively formed on the sealing surface 97 of the sealing surface 95 of this chamber 94 and/or Optical fiber plug passage 96.
It should be noted that the arbitrary cylindrical member 90 among Figure 10 can form a light time module in conjunction with aforesaid any photoelectric cell 20.
As shown in figure 11, the photoelectric cell 20 cooperations one cylindrical member 90 formation one light time module 100 with a TO-can framework is an example.This cylindrical member 90 has two lens 91 and 92, and these photoelectric cell 20 1 ends have an opening 34.There is not the barrier element between this photoelectricity crystal grain 26 and the lens 91, so these lens 91 can extend towards the direction of this photoelectricity crystal grain 26, and can enter this shell 32 inside via this opening 34, with near this photoelectricity crystal grain 26, and make the active region (not shown) of this photoelectricity crystal grain 26 aim at lens 91.Though the photoelectric cell 20 of present embodiment does not dispose traditional carrier, but because the spacing of photoelectricity crystal grain 26 and lens 91 can shorten by extending these lens 91, so still can reach high light coupling efficient, and easy passive aligning or the effect that is coupled and aligned.
And a stick 98 is coated between this photoelectric cell 20 and this cylindrical member 90, so that this chamber 94 forms the sealing shape, to avoid the invasion and attack of high temperature, high humidity environment.
Shown in Figure 12 A; in the light time module that the photoelectric cell 20 and the cylindrical member 90 of TO-can structure are formed; can fill a kind of index-matching oil (Index Matching Oil) 110 in this shell 32; in order to protection photoelectricity crystal grain 26; and make the divergence of beam angle that navigates between photoelectricity crystal grain 26 and the lens 91 to diminish, to improve light coupling efficient.This index-matching oil 110 can be silica gel (Silicone), UV glue (UV Glue) or visible optical cement (Visible Glue), in addition, and also can blanketing gas, for example air or nitrogen or inert gas in this shell 32.
Shown in Figure 12 B, in the light time module that the photoelectric cell 20 and the cylindrical member 90 of conducting wire frame structure are formed, index-matching oil 110 is filled with in these chamber 94 inside, and this photoelectric cell 20 is mounted in this chamber 94 in from top to bottom mode.So, this index-matching oil 110 can be in order to protection photoelectricity crystal grain 26, and make the divergence of beam angle that navigates between photoelectricity crystal grain 26 and the lens 91 to diminish, with the raising light coupling efficient.
As shown in FIG. 13A, can fill colloid 112 in the light time module, shown in Figure 13 A is wherein a kind of filling pattern, and the packed height of this colloid 112 is between the end face and this pedestal 22 end faces of this photoelectricity crystal grain 26.So, have the effect of fixing this photoelectricity crystal grain 26, the effect of protection sticky material and photoelectricity crystal grain 26 and integrated circuit elements 24 is also arranged.
Shown in Figure 13 B, another kind of mode of filling colloid 112 coats this photoelectricity crystal grain 26 fully for making this colloid 112, so, can further provide the effect of the wire rod (not shown) of protection photoelectricity crystal grain 26 and routing.
Shown in Figure 13 C, colloid 112 is filled in the chamber 94 of this cylindrical member 90, and these lens 91 that can not overflow.The photoelectric cell 20 of this TO-can structure inserts in these chambers 94, makes the end of these colloid 112 these shells 32 of bonding, and to form the sealing shape, so, this colloid 112 does not touch photoelectricity crystal grain 26, and the remaining space of this chamber 94 can form the sealing shape.
Shown in Figure 13 D, colloid 112 can be in order to coating this photoelectricity crystal grain 26, or extend to this integrated circuit elements 24.
In above-mentioned light time module, the photoelectric cell of TO-can structure and the photoelectric cell of conducting wire frame structure can exchange replacement.
As shown in figure 14, the light formed of the photoelectric cell 20 of a kind of conducting wire frame structure shown in the figure and a cylindrical member 90 time module.Though this photoelectric cell 20 has an outer package body 46, the end face of this outer package body 46 can be made near this photoelectricity crystal grain 26, and these lens 91 are extensible near this photoelectricity crystal grain 26, so present embodiment has high light coupling efficient.In addition, can fill in index-matching oil 110 or gas or make its vacuum in this chamber 94.
As shown in the above description, the light that the photoelectric cell of present embodiment and cylindrical member are formed time module is because lens can extend near photoelectricity crystal grain, so do not need carrier also can reach high light coupling efficient.In addition, do not have carrier,, and can minus processing procedure and the space that carrier is set so cost of manufacture is low.And, integrated circuit elements and this photoelectricity crystal grain are combined stacked structure, help to make this photoelectric cell miniaturization.In addition, another embodiment of photoelectric cell forms the folded form of establishing with photoelectricity crystal grain, integrated circuit elements and carrier, the light time module that therefore uses this photoelectric cell and cylindrical member to form, and this carrier can be in order to adjust the distance between this photoelectricity crystal grain and this lens.
The above is concrete enforcement example of the present invention, and is any based on the equivalent transformation on the technical solution of the present invention basis, all belongs within the protection range of the present invention.

Claims (37)

1, a kind of photoelectric cell is characterized in that, it comprises:
One pedestal;
One integrated circuit elements, this integrated circuit elements are provided on this pedestal;
One photoelectricity crystal grain, this photoelectricity crystal grain is folded to be located on this integrated circuit elements.
2, photoelectric cell as claimed in claim 1 is characterized in that: also comprise a carrier, this carrier is provided between this integrated circuit elements and this pedestal, and this photoelectricity crystal grain, this integrated circuit elements and this carrier form the folded form of establishing.
3, photoelectric cell as claimed in claim 1 is characterized in that: also comprise a shell, this shell is configured on this pedestal, and an opening is formed on this shell one end, and this opening is relative with this photoelectricity crystal grain.
4, photoelectric cell as claimed in claim 1 is characterized in that: this pedestal is the metab of a TO-can.
5, photoelectric cell as claimed in claim 1 is characterized in that: this pedestal is one of a plurality of metallic supports of a lead frame.
6, photoelectric cell as claimed in claim 5 is characterized in that: also comprise an outer package body, this outer package body and function is to coat each metallic support of this lead frame.
7, photoelectric cell as claimed in claim 6 is characterized in that: this outer package body one end is offered an opening, and this opening is relative with this photoelectricity crystal grain.
8, photoelectric cell as claimed in claim 6 is characterized in that: this outer package body one end has a lens section, and this lens section is relative with this photoelectricity crystal grain.
9, photoelectric cell as claimed in claim 1 is characterized in that: this pedestal is the chassis of a metal or plastic wire frame.
10, photoelectric cell as claimed in claim 1 is characterized in that: this integrated circuit elements is a commentaries on classics impedance amplifier.
11, photoelectric cell as claimed in claim 1 is characterized in that: this integrated circuit elements is the combination of a commentaries on classics impedance amplifier and a post-amplifier.
12, photoelectric cell as claimed in claim 1 is characterized in that: this integrated circuit elements is a driving integrated circuit.
13, photoelectric cell as claimed in claim 1 is characterized in that: this integrated circuit elements is the combination that a commentaries on classics impedance amplifier, a post-amplifier and drive integrated circuit.
14, photoelectric cell as claimed in claim 1 is characterized in that: this photoelectricity crystal grain is an optical detector wafer or a LED wafer or a laser diode wafer.
15, photoelectric cell as claimed in claim 1 is characterized in that: this photoelectricity crystal grain comprises an optical detector wafer and a LED wafer, and perhaps this photoelectricity crystal grain comprises an optical detector wafer and a laser diode wafer.
16, photoelectric cell as claimed in claim 1 is characterized in that: this photoelectricity crystal grain has two electrodes, and these two electrodes are positioned at phase the same side.
17, photoelectric cell as claimed in claim 16 is characterized in that: this photoelectricity crystal grain has a semi-insulating or ceramic substrate, and this substrate is positioned at the opposite side of these two electrodes.
18, photoelectric cell as claimed in claim 1 is characterized in that: this photoelectricity crystal grain has two electrodes, and these two electrodes are positioned at opposite side.
19, photoelectric cell as claimed in claim 1 is characterized in that: also comprise a passive device or an active member, this passive device or active member electrically connect this photoelectricity crystal grain.
20, a kind of light time module is characterized in that it comprises:
One cylindrical member, this cylindrical member have a chamber and an Optical fiber plug passage;
One photoelectric cell, this photoelectric cell group is located in this chamber, and this photoelectric cell has a pedestal, and an integrated circuit elements group is located on this pedestal, and a photoelectricity crystal grain is folded to be located on this integrated circuit elements;
At least one lens, this lens configuration is between this photoelectric cell and this Optical fiber plug passage, and these lens are relative with this photoelectric cell.
21, light as claimed in claim 20 time module, it is characterized in that: also comprise a carrier, this carrier is provided between the integrated circuit elements and this pedestal of this photoelectric cell, and this photoelectricity crystal grain, this integrated circuit elements and this carrier form the folded form of establishing.
22, light as claimed in claim 20 time module, it is characterized in that: also comprise a holding channel, this holding channel is communicated with this chamber and this Optical fiber plug passage, and this set of lenses is located in this holding channel.
23, light as claimed in claim 20 time module, it is characterized in that: the quantity of these lens is one, and this Optical fiber plug one end is a sealing surface, and these lens are formed on this sealing surface.
24, light as claimed in claim 20 time module, it is characterized in that: the quantity of these lens is one, and this chamber one end is a sealing surface, and these lens are formed on this sealing surface.
25, light as claimed in claim 20 time module, it is characterized in that: the quantity of these lens is two, and lens are formed in this Optical fiber plug passage, and another lens are formed in this chamber.
26, light as claimed in claim 20 time module, it is characterized in that: also comprise index-matching oil, this index-matching oil fills in this chamber.
27, light as claimed in claim 20 time module, it is characterized in that: also comprise colloid, this colloid is in order between the end face and this base-plates surface that are filled in this photoelectricity crystal grain.
28, light as claimed in claim 20 time module, it is characterized in that: also comprise colloid, this colloid is in order to coat this photoelectric cell fully.
29, light as claimed in claim 20 time module is characterized in that: also comprise colloid, this colloid is in order in the chamber that is filled in this cylindrical member, and this colloid do not contact this photoelectric cell, so that the remaining space of this chamber forms is airtight.
30, light as claimed in claim 20 time module, it is characterized in that: also comprise colloid, this colloid is in order to be coated on the photoelectricity crystal grain of this photoelectric cell.
31, light as claimed in claim 20 time module, it is characterized in that: this photoelectric cell has an opening, and this opening is relative with this photoelectricity crystal grain, and these lens are to this opening part extension, with near this photoelectricity crystal grain.
32, light as claimed in claim 31 time module, it is characterized in that: this photoelectric cell is the TO-can structure, and this photoelectric cell has a metal shell, and this opening is opened in this metal shell one end, and this opening is relative with this photoelectricity crystal grain.
33, light as claimed in claim 31 time module, it is characterized in that: this photoelectric cell is a conducting wire frame structure, and this photoelectric cell has an outer package body, and this opening is opened in this outer package body one end, and this opening is relative with this photoelectricity crystal grain.
34, a kind of photoelectric cell that is used for optical communication is characterized in that it comprises:
One pedestal;
One integrated circuit elements, this integrated circuit elements are provided on this pedestal;
One photoelectricity crystal grain, this photoelectricity crystal grain is folded to be located on this integrated circuit elements, in order to emission or reception light signal.
35, the photoelectric cell that is used for optical communication as claimed in claim 34, it is characterized in that: this photoelectricity crystal grain is applied to the optical-fibre communications of glass optical fiber, in order to the light signal of emission or reception 800nm~1800nm.
36, the photoelectric cell that is used for optical communication as claimed in claim 34, it is characterized in that: this photoelectricity crystal grain is applied to the optical-fibre communications of fiber optic fibers, plastic, in order to the light signal of emission or reception 200nm~800nm.
37, the photoelectric cell that is used for optical communication as claimed in claim 34 is characterized in that: also comprise a carrier, this carrier is provided between this integrated circuit elements and this pedestal, and this photoelectricity crystal grain, this integrated circuit elements and this carrier form the folded form of establishing.
CN200810006689.3A 2008-01-31 2008-01-31 Photoelectric element and optical sub-module employing the same Pending CN101499461A (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
CN200810006689.3A CN101499461A (en) 2008-01-31 2008-01-31 Photoelectric element and optical sub-module employing the same
US12/322,085 US20090226139A1 (en) 2008-01-31 2009-01-28 Optoelectronic component and optical subassembly for optical communication

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN200810006689.3A CN101499461A (en) 2008-01-31 2008-01-31 Photoelectric element and optical sub-module employing the same

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CN101499461A true CN101499461A (en) 2009-08-05

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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102034719A (en) * 2010-10-25 2011-04-27 江苏飞格光电有限公司 TO-CAN coaxial small-sized packaging method for PIN-FET high-sensitivity detector
CN111367028A (en) * 2020-03-12 2020-07-03 河北中瓷电子科技股份有限公司 TOSA/ROSA shell with full ceramic structure and preparation method thereof
CN111865429A (en) * 2019-04-30 2020-10-30 深圳市聚飞光电股份有限公司 Photoelectric receiver and manufacturing method thereof
CN112799180A (en) * 2019-11-14 2021-05-14 讯芯电子科技(中山)有限公司 Optical communication module and manufacturing method thereof

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102034719A (en) * 2010-10-25 2011-04-27 江苏飞格光电有限公司 TO-CAN coaxial small-sized packaging method for PIN-FET high-sensitivity detector
CN102034719B (en) * 2010-10-25 2012-09-19 江苏飞格光电有限公司 TO-CAN coaxial small-sized packaging method for PIN-FET high-sensitivity detector
CN111865429A (en) * 2019-04-30 2020-10-30 深圳市聚飞光电股份有限公司 Photoelectric receiver and manufacturing method thereof
CN112799180A (en) * 2019-11-14 2021-05-14 讯芯电子科技(中山)有限公司 Optical communication module and manufacturing method thereof
US11422323B2 (en) 2019-11-14 2022-08-23 Shunyun Technology (Zhong Shan) Limited Optical communication module manufacturable other than in a vacuum and method of manufacture thereof
CN111367028A (en) * 2020-03-12 2020-07-03 河北中瓷电子科技股份有限公司 TOSA/ROSA shell with full ceramic structure and preparation method thereof
CN111367028B (en) * 2020-03-12 2021-09-07 河北中瓷电子科技股份有限公司 TOSA/ROSA shell with full ceramic structure and preparation method thereof

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