CN110828606A - Ceramic photoelectric coupler and manufacturing method thereof - Google Patents
Ceramic photoelectric coupler and manufacturing method thereof Download PDFInfo
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- CN110828606A CN110828606A CN201911253447.9A CN201911253447A CN110828606A CN 110828606 A CN110828606 A CN 110828606A CN 201911253447 A CN201911253447 A CN 201911253447A CN 110828606 A CN110828606 A CN 110828606A
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- ceramic substrate
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- photocoupler
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- 239000000919 ceramic Substances 0.000 title claims abstract description 77
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 12
- 239000000758 substrate Substances 0.000 claims abstract description 62
- 239000002184 metal Substances 0.000 claims abstract description 20
- 229910052751 metal Inorganic materials 0.000 claims abstract description 20
- 238000000034 method Methods 0.000 claims abstract description 16
- 239000011248 coating agent Substances 0.000 claims abstract description 11
- 238000000576 coating method Methods 0.000 claims abstract description 11
- 239000000853 adhesive Substances 0.000 claims abstract description 4
- 230000001070 adhesive effect Effects 0.000 claims abstract description 4
- 238000003466 welding Methods 0.000 claims description 13
- 238000001465 metallisation Methods 0.000 claims description 11
- 238000005476 soldering Methods 0.000 claims description 8
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 6
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 4
- 238000009713 electroplating Methods 0.000 claims description 3
- 239000010931 gold Substances 0.000 claims description 3
- 229910052737 gold Inorganic materials 0.000 claims description 3
- 238000002844 melting Methods 0.000 claims description 3
- 230000008018 melting Effects 0.000 claims description 3
- 229910052757 nitrogen Inorganic materials 0.000 claims description 3
- 229910000679 solder Inorganic materials 0.000 claims description 3
- 238000012360 testing method Methods 0.000 claims description 3
- 238000004891 communication Methods 0.000 claims description 2
- 230000005540 biological transmission Effects 0.000 abstract description 5
- 238000004806 packaging method and process Methods 0.000 abstract description 5
- 238000013461 design Methods 0.000 abstract description 2
- 230000003287 optical effect Effects 0.000 abstract 2
- 238000005336 cracking Methods 0.000 abstract 1
- JVPLOXQKFGYFMN-UHFFFAOYSA-N gold tin Chemical compound [Sn].[Au] JVPLOXQKFGYFMN-UHFFFAOYSA-N 0.000 description 3
- 238000007789 sealing Methods 0.000 description 3
- 239000003292 glue Substances 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 239000005022 packaging material Substances 0.000 description 1
- 238000012858 packaging process Methods 0.000 description 1
- 230000005622 photoelectricity Effects 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 230000008054 signal transmission Effects 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/12—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
- H01L31/125—Composite devices with photosensitive elements and electroluminescent elements within one single body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/02002—Arrangements for conducting electric current to or from the device in operations
- H01L31/02005—Arrangements for conducting electric current to or from the device in operations for device characterised by at least one potential jump barrier or surface barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0203—Containers; Encapsulations, e.g. encapsulation of photodiodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Composite Materials (AREA)
- Manufacturing & Machinery (AREA)
- Led Device Packages (AREA)
Abstract
The invention relates to a ceramic photoelectric coupler and a manufacturing method thereof, and the ceramic photoelectric coupler comprises a multilayer ceramic substrate and a metal cover cap which is arranged on the ceramic substrate and forms a sealed cavity with the upper surface of the ceramic substrate, wherein the upper surface and the lower surface of the ceramic substrate are respectively provided with a plurality of metalized areas, different metalized areas on the upper surface of the multilayer ceramic substrate are electrically communicated with corresponding different metalized areas on the lower surface of the multilayer ceramic substrate, and the metalized areas on the upper surface of the multilayer ceramic substrate are provided with a light emitting diode and a phototriode which are electrically communicated with the metalized areas. According to the invention, the multilayer ceramic substrate is directly used as a packaging base through internal wiring and precise circuit layout of the multilayer ceramic substrate, internal optical path transmission is realized through the structural design of a packaging cavity and the mode of arranging the reflective coating in the cap, the phenomenon that the optical path transmission is influenced by cracking and layering of the light guide adhesive is avoided, the transmission efficiency and stability of the reflective photoelectric coupler are improved, and the process assembly difficulty is reduced.
Description
Technical Field
The invention relates to the technical field of photoelectricity, in particular to a ceramic photoelectric coupler and a manufacturing method thereof.
Background
Photocouplers generally consist of three parts: the principle of the light emission, the light reception and the signal amplification is as follows: the input electric signal drives a Light Emitting Diode (LED) to emit light with a certain wavelength, the light emitting diode is received by a light detector to generate a photocurrent, and the photocurrent is further amplified and then output, so that the electro-optic-electrical conversion is completed, and the functions of input, output and isolation are achieved. Because the input and the output of the photoelectric coupler are isolated from each other, the electric signal transmission has the characteristics of unidirectionality and the like, thereby having good electric insulation capability and anti-interference capability.
Most of the existing photoelectric couplers are plastic packaging devices, but military grade photoelectric couplers with high quality need to work in a full military temperature range of-55-125 ℃, and epoxy plastic packaging materials cannot effectively control the content of water vapor in the photoelectric couplers, so that long-term reliability cannot be guaranteed. In addition, as the miniaturization of the weaponry advances, the demand for miniaturization of the photoelectric coupler is also increasing. The photoelectric coupler in the prior art has a complex structure, a complex production process and a complex packaging process.
Disclosure of Invention
The invention aims to provide a ceramic photoelectric coupler and a manufacturing method thereof, which greatly reduce the volume of the device, reduce the weight and simplify the assembly process through multilayer wiring and high-precision assembly.
In order to achieve the purpose, the invention adopts the following technical scheme:
the utility model provides a pottery optoelectronic coupler, including multilayer ceramic substrate and with locate on the ceramic substrate and with the metal block of ceramic substrate's upper surface formation seal chamber, ceramic substrate's upper and lower surface is equipped with polylith metallization district respectively, the different metallization district of multilayer ceramic substrate upper surface is rather than the different metallization district electric intercommunication of the lower surface that corresponds, the metallization district of multilayer ceramic substrate upper surface is equipped with rather than electric intercommunication's emitting diode and phototriode.
As a further improvement of the above technical solution:
and a welding metallization area matched with the port of the metal cap is arranged on the upper surface of the multilayer ceramic substrate.
And the port of the metal cap is hermetically connected with the multilayer ceramic substrate in a reflow soldering mode.
And a reflective coating for reflecting the light signal emitted by the light-emitting device is arranged in the metal cap cavity.
The electrical communication of the upper surface and the lower surface of the multilayer ceramic substrate is realized by through holes in the substrate.
The back electrodes of the light-emitting diode and the phototriode are electrically communicated and fixed in the upper surface metalized area of the multilayer ceramic substrate through conductive adhesive, and the front electrode is electrically communicated with the upper surface metalized area of the multilayer ceramic substrate through gold wire bonding.
The method comprises the following steps:
electroplating a reflective coating on the surface of the metal cap cavity;
assembling the multilayer ceramic substrate and the device: manufacturing a multilayer ceramic substrate by adopting an LTCC (low temperature co-fired ceramic) or HTCC (high temperature co-fired ceramic) process, electroplating metalized areas on the upper surface and the lower surface of the multilayer ceramic substrate, then adhering components to the metalized areas corresponding to the substrate, and completing bonding;
welding and fixing the metal cap in a multilayer ceramic substrate welding metallization area in a reflow soldering mode, wherein the welding process is carried out in a nitrogen protection atmosphere;
and (5) performing an electrical property test after the assembly is finished.
The method comprises the following steps: in the step, the thickness of the light reflecting coating is 2 μm.
In the step, the melting point of the solder in the welding process is 280 ℃, and the process temperature is 310-330 ℃.
According to the technical scheme, the multilayer ceramic substrate is directly used as the packaging base through the internal wiring and the precise circuit layout of the multilayer ceramic substrate, the traditional three-dimensional structure that the light-emitting component and the photosensitive component are arranged in an up-and-down alignment mode is changed into the structure that the light-emitting component and the photosensitive component are arranged in a plane mode and are attached to the substrate, and the internal light path transmission is realized through the structural design of the packaging cavity and the mode that the reflective coating is arranged on the inner top of the capThe light guide glue is arranged on the surface of the circuit component, and the light guide glue is arranged on the surface of the circuit component. The volume of the ceramic photoelectric coupler is reduced to one fourth of the volume of the existing photoelectric coupler of the same type, the sealing performance is less than or equal to 1 multiplied by 10 < -3 > pa.cm 3/s, the ceramic photoelectric coupler is safe and reliable, temperature cycle resistance and mechanical impact resistance are realized, the size of the device is greatly reduced, and the insulation resistance can reach 1010Omega, the isolation voltage can reach 1000V, and CTR can be linearly adjusted within a certain range and can reach 200%. The transmission efficiency and the stability of the reflective photoelectric coupler are improved, and the process assembly difficulty is reduced.
Drawings
FIG. 1 is a schematic structural view of the present invention;
FIG. 2 is a plan view of the upper surface of the multilayer ceramic substrate of the present invention;
FIG. 3 is a plan view of the lower surface of the multilayer ceramic substrate of the present invention.
Detailed Description
The invention is further described below with reference to the accompanying drawings:
as shown in fig. 1 to 3, the ceramic photocoupler of the present embodiment includes a multilayer ceramic substrate 1 and a metal cap 4 disposed on the ceramic substrate 1 and forming a sealed cavity with the upper surface of the ceramic substrate 1, a metalized area 8 for welding the metal cap 4 and a metalized area 5 for connecting components are disposed at the edge of the ceramic substrate 1, and the metalized area 8 and the metal cap 4 are connected by gold-tin welding to realize integral sealing. The multilayer ceramic substrate 1 is provided with a light-emitting diode 3 and a phototriode 2, and different electrodes of the light-emitting diode 3 and the phototriode 2 are respectively and electrically communicated with a specific metallized area 5 on the upper surface of the multilayer ceramic substrate 1; the metallization 5 on the upper surface of the multilayer ceramic substrate is electrically connected with the metallization area 6 serving as a device bonding pad on the lower surface of the substrate through a through hole in the substrate; the lead interconnection uses a gold wire of phi 25 μm.
The top in the metal cap 4 is provided with a reflective coating 7, the thickness and the material of the reflective coating 7 can be set according to actual requirements, the reflective coating 7 of the embodiment is a gold layer, and the thickness is 2 μm.
As shown in FIG. 2, in this example, an AlN-HTCC wiring board was used, and all of the upper and lower surfaces were metallized with gold plating.
The specific manufacturing steps of the subminiature ceramic photocoupler of this embodiment are as follows:
step 1: a gold-plated reflecting layer is arranged in the cavity of the metal cap, and the thickness of the plating layer is 2 mu m;
step 2: assembling the multilayer ceramic substrate and the device: the multilayer ceramic substrate is internally wired and provided with through holes by an AlN-HTCC process, upper and lower surface metalized areas are electroplated, a frame-shaped metalized area on the upper surface provides metalized positioning for a later-stage welding cover cap, a plurality of block-shaped metalized areas are chip bonding and bonding areas, four block-shaped metalized areas on the lower surface are used as device bonding pads, and components are bonded to the substrate through conductive adhesive to complete bonding.
And step 3: and placing a gold-tin soldering lug between the upper surface soldering metallization region 8 and the port of the metal cap 4, completing sealing through gold-tin soldering, wherein the soldering process is carried out in a nitrogen protective atmosphere, the melting point of the solder is 280 ℃, and the process temperature is 310-.
And 4, step 4: and completing the electrical property test.
The above-mentioned embodiments are merely illustrative of the preferred embodiments of the present invention, and do not limit the scope of the present invention, and various modifications and improvements of the technical solution of the present invention by those skilled in the art should fall within the protection scope defined by the claims of the present invention without departing from the spirit of the present invention.
Claims (9)
1. A ceramic photoelectric coupler is characterized in that: the metal cap comprises a multilayer ceramic substrate and a metal cap which is arranged on the multilayer ceramic substrate and forms a sealed cavity with the upper surface of the ceramic substrate, wherein a plurality of metalized areas are respectively arranged on the upper surface and the lower surface of the ceramic substrate, the different metalized areas on the upper surface of the multilayer ceramic substrate are electrically communicated with the corresponding different metalized areas on the lower surface of the multilayer ceramic substrate, and a light emitting diode and a phototriode which are electrically communicated with the metalized areas on the upper surface of the multilayer ceramic substrate are arranged in the metalized areas on the upper surface of the multilayer ceramic substrate.
2. The ceramic photocoupler of claim 1, wherein: and a welding metallization area matched with the port of the metal cap is arranged on the upper surface of the multilayer ceramic substrate.
3. The ceramic photocoupler of claim 1, wherein: and the port of the metal cap is hermetically connected with the multilayer ceramic substrate in a reflow soldering mode.
4. The ceramic photocoupler of claim 1, wherein: and a reflective coating for reflecting the light signal emitted by the light-emitting device is arranged in the metal cap cavity.
5. The ceramic photocoupler of claim 1, wherein: the electrical communication of the upper surface and the lower surface of the multilayer ceramic substrate is realized by through holes in the substrate.
6. The ceramic photocoupler of claim 1, wherein: the back electrodes of the light-emitting diode and the phototriode are electrically communicated and fixed in the upper surface metalized area of the multilayer ceramic substrate through conductive adhesive, and the front electrode is electrically communicated with the upper surface metalized area of the multilayer ceramic substrate through gold wire bonding.
7. The manufacturing method of a ceramic photocoupler according to claim 1, comprising the steps of:
(1) a reflective coating is arranged on the inner wall of the metal cap cavity;
(2) assembling the multilayer ceramic substrate and the device: manufacturing a multilayer ceramic substrate by adopting an LTCC (low temperature co-fired ceramic) or HTCC (high temperature co-fired ceramic) process, electroplating metalized areas on the upper surface and the lower surface of the multilayer ceramic substrate, then adhering components to the metalized areas corresponding to the substrate, and completing bonding;
(3) welding and fixing the metal cap in a multilayer ceramic substrate welding metallization area in a reflow soldering mode, wherein the welding process is carried out in a nitrogen protection atmosphere;
(4) and testing after the assembly is finished.
8. The manufacturing method of a ceramic photocoupler according to claim 7, comprising the steps of: in the step (1), the metalized coating in the cap is made of gold and has a thickness of 2 microns.
9. The manufacturing method of a ceramic photocoupler according to claim 7, characterized in that: in the step (3), the melting point of the solder in the welding process is 280 ℃, and the process temperature is 310-330 ℃.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201911253447.9A CN110828606A (en) | 2019-12-09 | 2019-12-09 | Ceramic photoelectric coupler and manufacturing method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201911253447.9A CN110828606A (en) | 2019-12-09 | 2019-12-09 | Ceramic photoelectric coupler and manufacturing method thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN110828606A true CN110828606A (en) | 2020-02-21 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201911253447.9A Pending CN110828606A (en) | 2019-12-09 | 2019-12-09 | Ceramic photoelectric coupler and manufacturing method thereof |
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| Country | Link |
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| CN (1) | CN110828606A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115346952A (en) * | 2022-10-18 | 2022-11-15 | 合肥圣达电子科技实业有限公司 | Packaging structure for high-power large-current device and preparation method thereof |
| CN116111313A (en) * | 2023-04-04 | 2023-05-12 | 安徽蓝讯通信科技有限公司 | Broadband directional coupler and design method thereof |
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|---|---|---|---|---|
| JPH07130900A (en) * | 1993-11-01 | 1995-05-19 | Toshiba Corp | Semiconductor device |
| JPH0864721A (en) * | 1994-08-26 | 1996-03-08 | Sumitomo Metal Mining Co Ltd | Ball grid array package for multichip module and its manufacture |
| CN1491440A (en) * | 2001-02-06 | 2004-04-21 | 株式会社日立制作所 | Hybrid integrated circuit device and method for fabricating the same and electronic device |
| CN1678168A (en) * | 2004-03-31 | 2005-10-05 | 株式会社创器 | Circuit board, electronic device and mfg. method thereof |
| WO2013150616A1 (en) * | 2012-04-04 | 2013-10-10 | 三菱電機株式会社 | Semiconductor package |
| CN107331726A (en) * | 2016-04-28 | 2017-11-07 | 上海芯晨科技有限公司 | A kind of integrated optical coupler part and its manufacture method |
| CN210866221U (en) * | 2019-12-09 | 2020-06-26 | 中国电子科技集团公司第四十三研究所 | Ceramic photoelectric coupler |
-
2019
- 2019-12-09 CN CN201911253447.9A patent/CN110828606A/en active Pending
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH07130900A (en) * | 1993-11-01 | 1995-05-19 | Toshiba Corp | Semiconductor device |
| JPH0864721A (en) * | 1994-08-26 | 1996-03-08 | Sumitomo Metal Mining Co Ltd | Ball grid array package for multichip module and its manufacture |
| CN1491440A (en) * | 2001-02-06 | 2004-04-21 | 株式会社日立制作所 | Hybrid integrated circuit device and method for fabricating the same and electronic device |
| CN1678168A (en) * | 2004-03-31 | 2005-10-05 | 株式会社创器 | Circuit board, electronic device and mfg. method thereof |
| WO2013150616A1 (en) * | 2012-04-04 | 2013-10-10 | 三菱電機株式会社 | Semiconductor package |
| CN107331726A (en) * | 2016-04-28 | 2017-11-07 | 上海芯晨科技有限公司 | A kind of integrated optical coupler part and its manufacture method |
| CN210866221U (en) * | 2019-12-09 | 2020-06-26 | 中国电子科技集团公司第四十三研究所 | Ceramic photoelectric coupler |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115346952A (en) * | 2022-10-18 | 2022-11-15 | 合肥圣达电子科技实业有限公司 | Packaging structure for high-power large-current device and preparation method thereof |
| CN116111313A (en) * | 2023-04-04 | 2023-05-12 | 安徽蓝讯通信科技有限公司 | Broadband directional coupler and design method thereof |
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