CN107331726A - A kind of integrated optical coupler part and its manufacture method - Google Patents
A kind of integrated optical coupler part and its manufacture method Download PDFInfo
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- CN107331726A CN107331726A CN201610274007.1A CN201610274007A CN107331726A CN 107331726 A CN107331726 A CN 107331726A CN 201610274007 A CN201610274007 A CN 201610274007A CN 107331726 A CN107331726 A CN 107331726A
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/12—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
- H01L31/16—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources
- H01L31/167—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources the light sources and the devices sensitive to radiation all being semiconductor devices characterised by at least one potential or surface barrier
- H01L31/173—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources the light sources and the devices sensitive to radiation all being semiconductor devices characterised by at least one potential or surface barrier formed in, or on, a common substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/12—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
- H01L31/14—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the light source or sources being controlled by the semiconductor device sensitive to radiation, e.g. image converters, image amplifiers or image storage devices
- H01L31/147—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the light source or sources being controlled by the semiconductor device sensitive to radiation, e.g. image converters, image amplifiers or image storage devices the light sources and the devices sensitive to radiation all being semiconductor devices characterised by at least one potential or surface barrier
- H01L31/153—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the light source or sources being controlled by the semiconductor device sensitive to radiation, e.g. image converters, image amplifiers or image storage devices the light sources and the devices sensitive to radiation all being semiconductor devices characterised by at least one potential or surface barrier formed in, or on, a common substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
Abstract
The present invention provides a kind of integrated optical coupler part and preparation method thereof, and the integrated optical coupler part includes：Backing bottom；It is formed at the oxygen buried layer on the backing bottom；It is formed at the top layer silicon on the oxygen buried layer；The top layer silicon includes the first silicon island and the second silicon island of discrete setting；It is formed at the optical transmitting set on first silicon island；It is formed at the optical receiver in second silicon island.The integrated optical coupler part and its manufacture method of the present invention can realize that optical transmitting set is integrated in same dielectric substrate with optical receiver, reduce the closing line of device in a package, reduce noise signal.Meanwhile, integrated optical coupler part device size is minimum, or even available for electric isolation in chip, also eliminates the optical alignment of encapsulation, improve production efficiency, reduce cost.
Description
Technical field
The invention belongs to LMDS Light Coupled Device field, it is related to a kind of integrated optical coupler part and its manufacture method.
Background technology
LMDS Light Coupled Device (or photo-coupler) includes at least one light emitting devices, and the light emitting devices passes through optical transmission medium coupling
It is bonded to light receiving element.This structure allows information from a circuit transmission comprising light emitting devices to including light receiving element
Another circuit.And keep high electrical isolation between described two circuits.
Information is by electrical insulation tape by way of optical propagation.For example, light receiving element can not change comprising light emitting devices
Circuit operation, form isolation electrically.For example, transmitter can be by the low-voltage circuit institute using microprocessor or gate
Driving, and export the part that light receiving element can be high pressure DC or AC load circuit.Electric isolation under the situation
It is necessary, it is therefore prevented that the infringement to input circuit caused by the output circuit of relative conflict.
It is well known that existing technical method is all based on encapsulation technology, by originally discrete device (light emitting devices, light
Receiving device), fitted to by modes such as paster, insertions in dielectric substrate, there is preset lead to be used to the company of device on substrate
Connect and draw, then with material packages such as glass, epoxy resin.
Shown in Fig. 1 is the LMDS Light Coupled Device side view of existing encapsulation.Shown encapsulation photo-coupler 10 include substrate 101 with
And solder ball 102 on the substrate 101.LED (light emitting diode) device 103 and photoelectric crystal tube device 104 are respectively at
Two discrete positions on substrate 101, and covered by optical transmission medium 105.
Because it is very limited that photoelectric crystal tube device 104 receives the light sent by LED component 102, thus inefficiency, institute
It is very low (for example, big approximate number na training (nA), suitable with noise magnitude) with the output current of photoelectric crystal tube device 104, this
Requiring the LMDS Light Coupled Device of encapsulation has good electric property.But LED component 103 and the script of photoelectric crystal tube device 104
It is discrete, it is also what is separated with substrate 101, can be triggered and output current phase by the articulate overall package of the modes such as line
Deng the noise level of even greater than output current.
Further, since closing line and pre-molded structure, the size of traditional optical coupler package body are often difficult to reduce.This will be limited
Make its new production for being applied to the electronic product for requiring ultra-thin super-small.
It is the top view of existing four-way LMDS Light Coupled Device shown in Fig. 2.One LED and phototransistor constitutes a light and led to
Road.There may be crosstalk with optical channel for optical channel.It is well known that general technology is by LED and corresponding phototransistor progress light
Alignment is learned, while increasing interchannel spacing.But optical alignment in encapsulation process, high to positioning requirements, one side production efficiency is not
Height, on the other hand, between passage road the increase of spacing and can all increase product cost every use of luminescent material etc..
Therefore, a kind of integrated optical coupler part and its manufacture method how are provided, to reduce device noise signal, improve device life
Efficiency is produced, as those skilled in the art's important technological problems urgently to be resolved hurrily.
The content of the invention
The shortcoming of prior art in view of the above, it is an object of the invention to provide a kind of integrated optical coupler part and its manufacturer
Method, for solving that LMDS Light Coupled Device noise signal in the prior art is big, size is difficult to reduce, optical alignment difficulty is big, production effect
The problem of rate is low, cost is high.
In order to achieve the above objects and other related objects, the present invention provides a kind of integrated optical coupler part, the integrated optical coupler
Part includes：
Backing bottom；
It is formed at the oxygen buried layer on the backing bottom；
It is formed at the top layer silicon on the oxygen buried layer；The top layer silicon includes the first silicon island and the second silicon island of discrete setting；
It is formed at the optical transmitting set on first silicon island；
It is formed at the optical receiver in second silicon island.
Alternatively, the top layer silicon is intrinsic silicon, N-type lightly-doped silicon or p-type lightly-doped silicon, and resistivity is more than 10 Ω cm.
Alternatively, the top layer silicon is 111 crystal orientation.
Alternatively, the optical transmitting set is light emitting diode or laser diode.
Alternatively, the optical transmitting set is the horizontal light emitting structures based on longitudinal epitaxial nitride material.
Alternatively, the nitride material includes the one or more in GaN, AlN, InN, InGaN and AlGaN material.
Alternatively, the optical receiver is selected from PN junction silicon photoelectric diode, PIN silicon photoelectric diodes, avalanche diode and silicon light
Any one in electric triode.
The present invention also provides a kind of manufacture method of integrated optical coupler part, comprises the following steps：
S1：There is provided one includes the SOI substrate at backing bottom, oxygen buried layer and top layer silicon successively from bottom to top；
S2：Optical transmitting set is formed on the first predeterminable area of the top layer silicon, the shape in the second predeterminable area of the top layer silicon
Into optical receiver；
S3：Etch the top layer silicon to keep apart first predeterminable area and the second predeterminable area, obtain the of discrete setting
One silicon island and the second silicon island.
Alternatively, the step S2 includes：
S2-1：In top layer silicon face formation silica dioxide medium film；
S2-2：Optical receiver is formed in the second predeterminable area of the top layer silicon using ion implantation；
S2-3：The opening for the first predeterminable area for exposing the top layer silicon is formed in the silica dioxide medium layer film；
S2-4：Optical transmitting set is formed on the first predeterminable area of the top layer silicon.
Alternatively, in the step S2-3, the opening is formed using wet etching.
Alternatively, the optical transmitting set is light emitting diode or laser diode.
Alternatively, the optical transmitting set is the horizontal light emitting structures based on longitudinal epitaxial nitride material.
Alternatively, the nitride material includes the one or more in GaN, AlN, InN, InGaN and AlGaN material.
Alternatively, the optical receiver is selected from PN junction silicon photoelectric diode, PIN silicon photoelectric diodes, avalanche diode and silicon light
Any one in electric triode.
Alternatively, the top layer silicon is 111 crystal orientation.
Alternatively, the top layer silicon is intrinsic silicon, N-type lightly-doped silicon or p-type lightly-doped silicon, and resistivity is more than 10 Ω cm.
As described above, the integrated optical coupler part and its manufacture method of the present invention, have the advantages that：The present invention's is integrated
LMDS Light Coupled Device and its manufacture method can realize that optical transmitting set is integrated in same dielectric substrate with optical receiver, reduce device
Closing line in a package, reduces noise signal.Meanwhile, integrated optical coupler part device size is minimum, or even available for core
Electric isolation in piece, also eliminates the optical alignment of encapsulation, improves production efficiency, reduce cost.
Brief description of the drawings
Fig. 1 is shown as the side view of the LMDS Light Coupled Device encapsulated in the prior art.
Fig. 2 is shown as the top view of four-way LMDS Light Coupled Device in the prior art.
Fig. 3 is shown as the structural representation of the integrated optical coupler part of the present invention.
Fig. 4 is shown as the process chart of the manufacture method of the integrated optical coupler part of the present invention.
Fig. 5 is shown as the structural representation of the SOI substrate provided in the manufacture method of the integrated optical coupler part of the present invention.
Fig. 6 is shown as in the manufacture method of the integrated optical coupler part of the present invention in top layer silicon face formation silica dioxide medium
The schematic diagram of film.
Fig. 7 is shown as in the manufacture method of the integrated optical coupler part of the present invention using ion implantation the second of the top layer silicon
The schematic diagram of optical receiver is formed in predeterminable area.
Fig. 8 is shown as in the manufacture method of the integrated optical coupler part of the present invention forming sudden and violent in the silica dioxide medium layer film
Expose the schematic diagram of the opening of the first predeterminable area of the top layer silicon.
Fig. 9 is shown as being formed on the first predeterminable area of the top layer silicon in the manufacture method of the integrated optical coupler part of the present invention
The schematic diagram of optical transmitting set.
Figure 10 is shown as etching the top layer silicon to preset described first in the manufacture method of the integrated optical coupler part of the present invention
Region keeps apart with the second predeterminable area, obtains the first silicon island and the second silicon island of discrete setting.
Figure 11 is shown as the circuit theory diagrams of the integrated optical coupler part of the present invention.
Component label instructions
10 encapsulation photo-couplers
101 substrates
102 soldering balls
103 LED components
104 photoelectric crystal tube devices
105 optical transmission mediums
20 integrated optical coupler parts
201 backing bottoms
202 oxygen buried layers
203 first silicon island
204 second silicon island
205 optical transmitting sets
206 optical receivers
207 top layer silicons
208 silica dioxide medium films
209 openings
S1~S3 steps
Embodiment
Illustrate embodiments of the present invention below by way of specific instantiation, those skilled in the art can be as disclosed by this specification
Content understand easily the present invention other advantages and effect.The present invention can also add by way of a different and different embodiment
To implement or apply, the various details in this specification can also be based on different viewpoints and application, in the essence without departing from the present invention
God is lower to carry out various modifications or alterations.
Fig. 3 is referred to Figure 11.It should be noted that the diagram provided in the present embodiment only illustrates the present invention in a schematic way
Basic conception, then in schema only display with relevant component in the present invention rather than according to component count during actual implement, shape
And size is drawn, it is actual when implementing, and kenel, quantity and the ratio of each component can be a kind of random change, and its assembly layout
Kenel may also be increasingly complex.
Embodiment one
The present invention provides a kind of integrated optical coupler part, referring to Fig. 3, the structure for being shown as the integrated optical coupler part 20 is shown
It is intended to, including：
Backing bottom 201；
It is formed at the oxygen buried layer 202 on the backing bottom 201；
It is formed at the top layer silicon on the oxygen buried layer 202；The top layer silicon includes the first silicon island 203 and the second silicon of discrete setting
Island 204；
It is formed at the optical transmitting set 205 on first silicon island 203；
It is formed at the optical receiver 206 in second silicon island 204.
Specifically, the backing bottom 201, oxygen buried layer 202 and top layer silicon can be by SOI (Silicon-On-Insulator, insulator
Upper silicon).The backing bottom 201 includes but is not limited to the conventional lining such as silicon, germanium, germanium silicon, III-V, sapphire
Bottom.The oxygen buried layer 202 uses SiO2Insulating barrier, its thickness is more than 1 μm.The top layer silicon include but is not limited to intrinsic silicon,
N-type lightly-doped silicon or p-type lightly-doped silicon.As an example, the resistivity of the top layer silicon is more than 10 Ω cm, and use 111
Crystal orientation.The top layer silicon of 111 crystal orientation is conducive to nitride material in epitaxial growth thereon.
Specifically, the optical transmitting set 205 is located at top layer silicon side constituency, for sending optical signal；The optical receiver
206 are located at the top layer silicon opposite side constituency, for receiving the optical signal sent from the optical transmitting set 205.Herein, it is so-called
Side constituency refers to a certain piece of region of top layer silicon, using mask plate (mask) windowing, to specify specific region to be used as vitellarium
Domain；Opposite side constituency refers to positioned at another piece of region relative to optical transmitting set of top layer silicon.
Because in LMDS Light Coupled Device, a circuit comprising optical transmitting set needs completely electrically with a circuit comprising optical receiver
Isolate and optics conducting, therefore in the integrated optical coupler part of the present invention, the optical transmitting set positioned at top layer silicon must be with being similarly positioned in
The optical receiver of top layer silicon carries out electric isolation.In the present embodiment, the integrated optical coupler part 10 is using common in SOI technology
Silicon island isolation technology, i.e., by the top layer silicon etching around optical transmitting set 205 and optical receiver 206 until oxygen buried layer, shape
Into independent silicon island, optical transmitting set 205 is located on independent silicon island with optical receiver 206, i.e., the first silicon of above-mentioned discrete setting
The silicon island 204 of island 203 and second, realizes that the optical transmitting set 205 is completely electrically isolated with optical receiver 206, without influenceing it
Optics is turned on.
Due to the complexity and Cost Problems of device architecture, the optical transmitting set 205 is usually light emitting diode (Light emitting
Diode, LED), such as group III-N light emitting diode.LED is one kind of semiconductor diode, electric energy can be changed into light
Energy.Light emitting diode is made up of as general-purpose diode a PN junction, it may have unilateral conduction.When to light-emitting diodes
Pipe is added after forward voltage, is injected into the hole in N areas from P areas and the electronics in P areas is injected into by N areas, the number near PN junction
Electronics and the hole-recombination in P areas in micron respectively with N areas, produce the fluorescence of spontaneous radiation.
Certainly, the optical transmitting set 205 can also be laser diode (Laser diode, LD).Laser diode is substantially
It is a kind of semiconductor diode, it is whether identical according to PN junction material, laser diode can be divided into homojunction, single heterojunction
(SH), double heterojunction (DH) and SQW (QW) laser diode.One of characteristic of laser diode, being can be directly
From the power of its output light of current-modulation.Because between Output optical power and input current being generally linear relationship, the pole of laser two
Pipe can directly modulate the power of output light using analog or digital electric current, save the modulator of costliness, make the application of diode more
Plus it is economical and practical.
As an example, the optical transmitting set 205 is the horizontal light emitting structures based on longitudinal epitaxial nitride material.The nitride
Material includes the one or more in GaN, AlN, InN, InGaN and AlGaN material, 6.3eV of its energy gap from AlN
To InN 1.9eV, emission wavelength can be from deep ultraviolet 210nm to feux rouges 650nm, it is, therefore, possible to provide quite varied
Fluorescence excitation light source.
Specifically, it 207 is silicon detector that the optical receiver, which is, the spectral region of silicon detector is 300nm-1100nm.
As an example, the optical receiver can be the PN junction silicon photoelectric diode based on traditional cmos process making for 207,
Can also be PIN diode, avalanche diode (avalanche photo diodes, APD), or silicon phototriode.
Wherein, PN junction silicon photoelectric diode works under backward voltage effect, and when not having illumination, reverse current is extremely faint,
Referred to as dark current；When having illumination, reverse current is rapidly increased to tens microamperes, referred to as photoelectric current.The intensity of light is bigger, reversely
Electric current is also bigger.The change of light causes photodiode current to change, and optical signal can be just converted into electric signal by this, as light
Detector.
PIN photodiode is also referred to as PIN junction diode or PIN diode, and it is pressed from both sides between P-type semiconductor and N-type semiconductor
One layer of intrinsic semiconductor (Intrinsic layers, or I layers), light radiation is absorbed and produces photoelectric current, can be detected as a kind of light
Device.PIN photodiode has the advantages that junction capacity is small, the transition time is short, sensitivity is high.Because intrinsic layer is relative to P areas
It is high resistance area with N areas, the internal electric field of PN junction is just substantially concentrated in I layers entirely.It is I layers thicker in PIN photodiode,
Almost occupy whole depletion region.The incident light of the overwhelming majority is absorbed in I layers and produces substantial amounts of electron-hole pair.In I
Layer both sides are doping concentration very high p-type and N-type semiconductor, P layer and N layers very thin, the ratio very little of absorption incident light.Cause
And light produces drift component in electric current and account for leading position, this just greatly accelerates response speed.
Avalanche diode is to utilize two kinds of physical effects of ionization by collision and transition time of carrier in semiconductor structure and produce negative resistance
Solid state microwave device.PN junction has unilateral conduction, and forward resistance is small, and backward resistance is very big.When backward voltage is increased to necessarily
During numerical value, reverse current increases suddenly, is exactly reverse electrical breakdown, its point avalanche breakdown and Zener breakdown (tunnel breakdown).Snowslide
Puncture when being that PN junction backward voltage increases to a numerical value, carrier multiplication increases much and fast just as snowslide.Utilize this
The diode that individual characteristic makes is exactly avalanche diode.
Silicon phototriode is that N-P-N structures are made with silicon single crystal.Tube core base area is made larger, and launch site area is but done
Obtain smaller, incident ray is mainly absorbed by base.As photodiode, incident light inspires electronics and hole in base.
In the presence of base drift field, electronics is pulled to collecting zone, and hole is accumulated in close to one side of launch site.Due to hole
Accumulation and cause the reduction of emitter barrier, its result equivalent at launch site two ends plus a forward voltage, so as to cause
Multiplying power is β+1 (equivalent to the current gain in triode common emitter circuit) electron injection.Silicon phototriode it is sensitive
Degree is higher than silicon photoelectric diode, and output current is also bigger than photodiode, mostly milliampere level.But its photoelectric characteristic is not so good as photoelectricity
Diode is good, under stronger illumination, photoelectric current and the non-linear relation of illumination.
In the integrated optical coupler part of the present invention, optical transmitting set is integrated in same dielectric substrate with optical receiver, reduces device
Closing line in a package, reduces noise signal.Meanwhile, relative to conventional package LMDS Light Coupled Device, Integrated Light of the invention
Coupled apparatus can realize smaller size, be conducive to being applied in the production of the electronic product of ultra-thin super-small, or even available
In electric isolation in chip, the optical alignment of encapsulation is also eliminated, production efficiency is improved, cost is reduced.
Embodiment two
The present invention also provides a kind of manufacture method of integrated optical coupler part, referring to Fig. 4, being shown as the technological process of this method
Figure, comprises the following steps：
S1：There is provided one includes the SOI substrate at backing bottom, oxygen buried layer and top layer silicon successively from bottom to top；
S2：Optical transmitting set is formed on the first predeterminable area of the top layer silicon, the shape in the second predeterminable area of the top layer silicon
Into optical receiver；
S3：Etch the top layer silicon to keep apart first predeterminable area and the second predeterminable area, obtain the of discrete setting
One silicon island and the second silicon island.
Referring initially to Fig. 5, step S1 is performed：There is provided one includes backing bottom 201, oxygen buried layer 202 and top successively from bottom to top
The SOI substrate of layer silicon 207.
Specifically, the backing bottom 201 includes but is not limited to the conventional lining such as silicon, germanium, germanium silicon, III-V, sapphire
Bottom.The oxygen buried layer 202 uses SiO2Insulating barrier, its thickness is more than 1 μm.The top layer silicon include but is not limited to intrinsic silicon,
N-type lightly-doped silicon or p-type lightly-doped silicon.As an example, the resistivity of the top layer silicon is more than 10 Ω cm, and use 111
Crystal orientation.The top layer silicon of 111 crystal orientation is conducive to the epitaxial growth of nitride material.
Referring next to Fig. 6 to Fig. 9, step S2 is performed：Light transmitting is formed on the first predeterminable area of the top layer silicon 207
Device 205, forms optical receiver 206 in the second predeterminable area of the top layer silicon 207.
As an example, the step S2 includes：
S2-1：As shown in fig. 6, forming silica dioxide medium film 208 on the surface of top layer silicon 207.
Specifically, forming the silica dioxide medium film 208 using PECVD or LPCVD method.In the present embodiment,
The thickness of the silica dioxide medium film 208 is preferably not greater than 1 μm.
The effect of the silica dioxide medium film 208 includes two aspects：On the one hand during optical receiver is subsequently formed,
Suppress damage of the ion implanting to top layer silicon face；On the other hand during optical transmitting set is subsequently formed, it is used as selective area epitaxial
Mask.
S2-2：As shown in fig. 7, forming optical receiver in the second predeterminable area of the top layer silicon 207 using ion implantation
206。
Specifically, the optical receiver 206 can select PN junction silicon photoelectric diode, PIN silicon photoelectric diodes and avalanche diode
In any one.To make the optical receiver end electric current output increase of photo-coupler, the optical receiver 206 can also use silicon
Phototriode.
In this step, using the method for ion implanting, can easily in the second predeterminable area of the top layer silicon 207 not
The doping of p-type or N-type is carried out with position, so as to obtain the optical receiver of respective type.
S2-3：The of the top layer silicon 207 is exposed as shown in figure 8, being formed in the silica dioxide medium layer film 208
The opening 209 of one predeterminable area.
In the present embodiment, it is preferred to use wet etching forms the opening 209.Because dry etching meeting partial injury top layer silicon,
Have a negative impact to subsequent epitaxial.And although lateral etching can occur to a certain extent for wet etching, the device considered is horizontal
To size in hundreds of microns, therefore influence is little.
S2-4：As shown in figure 9, forming optical transmitting set 205 on the first predeterminable area of the top layer silicon 207.
Specifically, the optical transmitting set 205 selects light emitting diode or laser diode.In the present embodiment, the optical transmitting set
205 are preferred to use the horizontal light emitting structures based on longitudinal epitaxial nitride material.The nitride material include GaN, AlN, InN,
One or more in InGaN and AlGaN material.Wherein, GaN base material can be grown on the face of silicon 111, and the present invention makes
With 111 crystal orientation top layer silicons, pass through mask selective area epitaxial growth GaN base material.
As an example, from MOCVD (Metal-organic Chemical Vapor Deposition, metallo-organic compound
Learn gaseous phase deposition) growth apparatus, crystal growth source material is used as using hydride of the organic compound of III race's element and V group element etc.
Material, in pyrolysis mode in the enterprising promoting the circulation of qi phase epitaxy of substrate, grows various III-V group compound semiconductors and theirs is more
The thin layer monocrystal material of first solid solution.
Finally referring to Fig. 10, performing step S3：The top layer silicon 207 is etched to preset first predeterminable area with second
Zone isolation is opened, and obtains the first silicon island 203 and the second silicon island 204 of discrete setting.
Because the optical transmitting set 205 and optical receiver 206 are respectively formed on first silicon island 203 and second silicon island
In 204, this step passes through silicon island isolation technology, it is possible to achieve the optical transmitting set 205 is complete with the optical receiver 206
Electric isolation, without influenceing its optics to turn on.
Figure 11 is referred to, the circuit theory diagrams of the integrated optical coupler part of the present invention are shown as, wherein, the optical transmitting set 205
By taking lateral light extraction InGaN/GaN quantum well light-emitting diode (LED) as an example, the optical receiver 206 is with silicon phototriode
Exemplified by pipe.The integrated optical coupler part has four pins, and wherein pin 1 (Pin1) is inputted just as LED electric current
Pole, pin 2 (Pin2) is as negative pole, and pin 3 (Pin3) is the emitter stage of phototriode, and pin 4 (Pin4) is light
The colelctor electrode of electric triode.
The manufacture method of the integrated optical coupler part of the present invention utilizes silicon in making optical transmitting set and optical receiver in SOI substrate
Island isolation technology realizes completely electrically isolating for optical transmitting set and optical receiver, without influenceing its optics to turn on, and reduces device
Closing line in a package, reduces noise signal.Relative to traditional optical coupler package method, integrated optocoupler of the invention
The preparation method of clutch part is due to reducing closing line and pre-molded structure, it is possible to achieve smaller device size, is conducive to application
Into the production of the electronic product of ultra-thin super-small；The optical alignment of encapsulation is also eliminated simultaneously, production efficiency is improved, and is dropped
Low cost.
In summary, integrated optical coupler part of the invention and its manufacture method can realize that optical transmitting set is integrated in optical receiver
In same dielectric substrate, the closing line of device in a package is reduced, noise signal is reduced.Meanwhile, integrated optical coupler part
Device size is minimum, or even available for electric isolation in chip, also eliminates the optical alignment of encapsulation, improve production efficiency,
Reduce cost.So, the present invention effectively overcomes various shortcoming of the prior art and has high industrial utilization.
The above-described embodiments merely illustrate the principles and effects of the present invention, not for the limitation present invention.It is any to be familiar with this skill
The personage of art all can carry out modifications and changes under the spirit and scope without prejudice to the present invention to above-described embodiment.Therefore, such as
Those of ordinary skill in the art without departing from disclosed spirit with completed under technological thought all etc.
Modifications and changes are imitated, should be covered by the claim of the present invention.
Claims (16)
1. a kind of integrated optical coupler part, it is characterised in that the integrated optical coupler part includes：
Backing bottom；
It is formed at the oxygen buried layer on the backing bottom；
It is formed at the top layer silicon on the oxygen buried layer；The top layer silicon includes the first silicon island and the second silicon island of discrete setting；
It is formed at the optical transmitting set on first silicon island；
It is formed at the optical receiver in second silicon island.
2. integrated optical coupler part according to claim 1, it is characterised in that：The top layer silicon is intrinsic silicon, N-type is lightly doped
Silicon or p-type lightly-doped silicon, resistivity are more than 10 Ω cm.
3. integrated optical coupler part according to claim 1, it is characterised in that：The top layer silicon is 111 crystal orientation.
4. integrated optical coupler part according to claim 1, it is characterised in that：The optical transmitting set is light emitting diode or laser
Diode.
5. integrated optical coupler part according to claim 1, it is characterised in that：The optical transmitting set is based on longitudinal epitaxial nitride
The horizontal light emitting structures of thing material.
6. integrated optical coupler part according to claim 5, it is characterised in that：The nitride material include GaN, AlN,
One or more in InN, InGaN and AlGaN material.
7. integrated optical coupler part according to claim 1, it is characterised in that：The optical receiver is selected from PN junction silicon photoelectricity two
Any one in pole pipe, PIN silicon photoelectric diodes, avalanche diode and silicon phototriode.
8. a kind of manufacture method of integrated optical coupler part, it is characterised in that comprise the following steps：
S1：There is provided one includes the SOI substrate at backing bottom, oxygen buried layer and top layer silicon successively from bottom to top；
S2：Optical transmitting set is formed on the first predeterminable area of the top layer silicon, in the second predeterminable area of the top layer silicon
Form optical receiver；
S3：The top layer silicon is etched so that first predeterminable area and the second predeterminable area to be kept apart, discrete setting is obtained
First silicon island and the second silicon island.
9. the manufacture method of integrated optical coupler part according to claim 8, it is characterised in that：The step S2 includes：
S2-1：In top layer silicon face formation silica dioxide medium film；
S2-2：Optical receiver is formed in the second predeterminable area of the top layer silicon using ion implantation；
S2-3：The opening for the first predeterminable area for exposing the top layer silicon is formed in the silica dioxide medium layer film；
S2-4：Optical transmitting set is formed on the first predeterminable area of the top layer silicon.
10. the manufacture method of integrated optical coupler part according to claim 9, it is characterised in that：In the step S2-3,
The opening is formed using wet etching.
11. the manufacture method of integrated optical coupler part according to claim 8 or claim 9, it is characterised in that：The optical transmitting set is
Light emitting diode or laser diode.
12. the manufacture method of integrated optical coupler part according to claim 8 or claim 9, it is characterised in that：The optical transmitting set is
Horizontal light emitting structures based on longitudinal epitaxial nitride material.
13. the manufacture method of integrated optical coupler part according to claim 10, it is characterised in that：The nitride material includes
One or more in GaN, AlN, InN, InGaN and AlGaN material.
14. the manufacture method of integrated optical coupler part according to claim 8 or claim 9, it is characterised in that：The optical receiver choosing
From any one in PN junction silicon photoelectric diode, PIN silicon photoelectric diodes, avalanche diode and silicon phototriode.
15. the manufacture method of integrated optical coupler part according to claim 8 or claim 9, it is characterised in that：The top layer silicon is 111
Crystal orientation.
16. the manufacture method of integrated optical coupler part according to claim 8 or claim 9, it is characterised in that：The top layer silicon is this
Silicon, N-type lightly-doped silicon or p-type lightly-doped silicon are levied, resistivity is more than 10 Ω cm.
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| CN108364909A (en) * | 2018-01-19 | 2018-08-03 | 西安中为光电科技有限公司 | It is a kind of that there is the chip and preparation method thereof for emitting and receiving optical signal function |
| CN111341876A (en) * | 2018-12-18 | 2020-06-26 | 博尔博公司 | Light output power self-sensing light emitting device |
| CN112993076A (en) * | 2021-02-19 | 2021-06-18 | 京东方科技集团股份有限公司 | Optoelectronic integrated substrate, preparation method thereof and optoelectronic integrated circuit |
| WO2023137702A1 (en) * | 2022-01-21 | 2023-07-27 | 开发晶照明（厦门）有限公司 | Optical coupler |
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| CN108364909A (en) * | 2018-01-19 | 2018-08-03 | 西安中为光电科技有限公司 | It is a kind of that there is the chip and preparation method thereof for emitting and receiving optical signal function |
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