CN108364909A - It is a kind of that there is the chip and preparation method thereof for emitting and receiving optical signal function - Google Patents
It is a kind of that there is the chip and preparation method thereof for emitting and receiving optical signal function Download PDFInfo
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- CN108364909A CN108364909A CN201810055541.2A CN201810055541A CN108364909A CN 108364909 A CN108364909 A CN 108364909A CN 201810055541 A CN201810055541 A CN 201810055541A CN 108364909 A CN108364909 A CN 108364909A
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- 230000003287 optical effect Effects 0.000 title claims abstract description 32
- 230000009131 signaling function Effects 0.000 title claims abstract description 20
- 238000002360 preparation method Methods 0.000 title abstract description 4
- 239000000758 substrate Substances 0.000 claims abstract description 62
- 239000010931 gold Substances 0.000 claims abstract description 30
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims abstract description 25
- 229910052737 gold Inorganic materials 0.000 claims abstract description 25
- 229910000679 solder Inorganic materials 0.000 claims abstract description 21
- 238000000034 method Methods 0.000 claims abstract description 17
- 238000004519 manufacturing process Methods 0.000 claims abstract description 12
- 238000001259 photo etching Methods 0.000 claims abstract description 10
- 230000015572 biosynthetic process Effects 0.000 claims abstract description 4
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 claims description 38
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 38
- 229910002601 GaN Inorganic materials 0.000 claims description 23
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 23
- 229910052594 sapphire Inorganic materials 0.000 claims description 11
- 239000010980 sapphire Substances 0.000 claims description 11
- 238000005516 engineering process Methods 0.000 claims description 8
- 238000005530 etching Methods 0.000 claims description 6
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 4
- 229910052733 gallium Inorganic materials 0.000 claims description 4
- 230000008859 change Effects 0.000 claims description 3
- 238000004544 sputter deposition Methods 0.000 claims description 3
- 238000007740 vapor deposition Methods 0.000 claims description 3
- 229910052785 arsenic Inorganic materials 0.000 claims description 2
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 claims description 2
- 238000001312 dry etching Methods 0.000 claims description 2
- 238000003466 welding Methods 0.000 claims 2
- 230000005622 photoelectricity Effects 0.000 claims 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 230000004048 modification Effects 0.000 description 4
- 238000012986 modification Methods 0.000 description 4
- 229910052700 potassium Inorganic materials 0.000 description 4
- 239000011591 potassium Substances 0.000 description 4
- -1 potassium nitride Chemical class 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 238000000605 extraction Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 230000003628 erosive effect Effects 0.000 description 2
- 230000003760 hair shine Effects 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
Abstract
The invention discloses a kind of chips and preparation method thereof for having and emitting and receiving optical signal function, and wherein production method includes the following steps：S1：Growth LED epitaxial layers form LED chip on substrate；S2：The subregion of LED chip is etched to substrate using photoetching technique and lithographic technique；S3：Au layers of formation gold solder pad are grown on substrate；S4：Photoelectric detector chip is welded on gold solder pad；S5：Grow electrode.The transmitting of optical signal and receive capabilities are integrated on a chips by the present invention, the light fed back to can be according to luminous light path backtracking, without carrying out secondary light path design, save prodigious light path design expense, and transmitting and reception optical signal function are integrated on a device, volume reduces, and it is highly integrated to be more advantageous to product.
Description
Technical field
The present invention relates to field of semiconductor devices, and in particular to it is a kind of have emit and receive optical signal function chip and
Its production method.
Background technology
The transmitting and receiving apparatus of traditional optical signal is completed by two devices respectively, and a device is shone by LED etc.
Device emits optical signals, another device receives the optical signal fed back to by photodetector, converts optical signal into telecommunications
Number output, to complete transmitting and the receive capabilities of optical signal.
Invention content
The purpose of the present invention is to provide a kind of chip and preparation method thereof for having and emitting and receiving optical signal function, solutions
Certainly currently without there is optical signal launch and the chip of receive capabilities simultaneously the problem of.
In order to solve the above technical problems, the present invention uses following technical scheme：
It is a kind of have emit and receive optical signal function chip, including substrate, detector chip and be symmetrical arranged in the substrate
The LED epitaxial layers of heart both sides are provided with gold solder pad at the center of above-mentioned substrate, and above-mentioned photoelectric detector chip is welded on gold solder pad
On, it is both provided with electrode above above-mentioned LED epitaxial layers and photoelectric detector chip.
Further scheme is that above-mentioned substrate is Sapphire Substrate, and above-mentioned LED epitaxial layers sequentially consist of N-type
The overall thickness of gallium nitride layer, quantum well layer and p-type gallium nitride layer, above-mentioned LED epitaxial layers is 5~10 microns.
Further scheme is that above-mentioned photoelectric detector chip is GaAs base detector chip, above-mentioned GaAs base
The structure of detector chip sequentially consists of gallium arsenide substrate, U-shaped gallium arsenide layer, n type gaas layer, U-shaped gallium arsenide layer
And p type gaas layer.
A kind of production method with the chip for emitting and receiving optical signal function, includes the following steps：
S1：Growth LED epitaxial layers form LED chip on substrate；
S2：The subregion of LED chip is etched to substrate using photoetching technique and lithographic technique；
S3：Au layers of formation gold solder pad are grown on substrate；
S4：Photoelectric detector chip is welded on gold solder pad；
S5：Grow electrode.
Further scheme is, substrate is Sapphire Substrate, LED epitaxial layers sequentially consist of n type gallium nitride layer,
Quantum well layer and p-type gallium nitride layer.
Further scheme is will be in chip using photoetching and dry etching technology after forming LED chip in S1 steps
For the region etch in portion to n type gallium nitride layer, etching depth is 0.5~1.5 micron.
Further scheme is, in S2 steps, is carved the subregion of LED chip using photoetching technique and lithographic technique
It is 5~10 microns to lose to the etching depth of Sapphire Substrate.
Further scheme is that the growth thickness of gold solder pad is 15000~25000 angstroms in S3 steps.
Further scheme is that the photoelectric detector chip welded on gold solder pad in S4 steps detects for GaAs base
Device,
Further scheme is that the structure of GaAs base detector sequentially consists of gallium arsenide substrate, U-shaped GaAs
Layer, n type gaas layer, U-shaped gallium arsenide layer and p type gaas layer.
Further scheme is that the specific method that electrode is grown in S5 steps is using vapor deposition or sputtering technology in P
Au layers, which are grown, on type gallium nitride layer and n type gallium nitride layer is respectively formed gold electrode.
Compared with prior art, the beneficial effects of the invention are as follows：
The LED epitaxial layers of the present invention form LED chip with substrate and are provided with detector core at the center of substrate for shining
Piece, the light sent out for receiving LED, LED chip and detector are attached in the same chip, and chip volume smaller more has
It is highly integrated conducive to product.
The transmitting of optical signal and receive capabilities are integrated on a chips by the present invention, and the light fed back to can be according to luminous
Light path backtracking does not have to carry out secondary light path design, saves prodigious light path design expense.
Description of the drawings
Fig. 1 is the structure top view of the present invention.
Fig. 2 is the side view in the directions structure of the invention A-A.
Specific implementation mode
In order to make the purpose , technical scheme and advantage of the present invention be clearer, with reference to the accompanying drawings and embodiments, right
The present invention is further elaborated.It should be appreciated that the specific embodiments described herein are merely illustrative of the present invention, and
It is not used in the restriction present invention.
Embodiment 1：
It is a kind of that there is the chip for emitting and receiving optical signal function referring to Fig. 1, including substrate 1, detector chip 4 and symmetrically set
The LED epitaxial layers 2 in 1 center both sides of substrate are set, gold solder pad 3 is provided at the center of substrate 1, detector chip 4 is welded on gold
On weld pad 3, the top of LED epitaxial layers 2 and detector chip 4 is both provided with electrode.
LED epitaxial layers form LED chip with substrate and are provided with detector chip at the center of substrate for shining, and use
In the light that reception LED is sent out, LED chip and detector are attached in the same chip, chip volume smaller, convenient for narrow
The use in space, and the light fed back to can not have to carry out secondary light path design, save according to luminous light path backtracking
Prodigious light path design expense.
To ensure that the accuracy detector chip for receiving optical signal needs the geometric center position for being welded on substrate, deviation is not
It can exceed that 20 microns.LED epitaxial layers are symmetrical design in chip design, and the whole light extraction of chip can be ensured close in chip
The heart is conducive to the transmitting and reception of chip optical-signal.
Embodiment 2：
On the basis of the above embodiments, substrate 1 is Sapphire Substrate, and LED epitaxial layers 2 sequentially consist of n type gallium nitride
The overall thickness of layer 21, quantum well layer 22 and p-type gallium nitride layer 23, LED epitaxial layers 2 is 5~10 microns.
Photoelectric detector chip 4 is silicon-based detector chip, GaAs base detector chip and potassium nitride base detector core
One kind in piece.Detector chip can select silicon-based detector chip, GaAs base detector core according to the wave band of feedback light
One kind in piece and potassium nitride base detector chip.
Embodiment 3：
On the basis of the above embodiments, photoelectric detector chip 4 is GaAs base detector chip, GaAs base detector core
The structure of piece sequentially consists of gallium arsenide substrate 41, U-shaped gallium arsenide layer 42, n type gaas layer 43, U-shaped gallium arsenide layer 44
With p type gaas layer 45.
It is a kind of that there is the production method for emitting and receiving optical signal functional chip, include the following steps：
S1：LED epitaxial layers 2 are grown on substrate 1 forms LED chip；Substrate 1 be Sapphire Substrate, LED epitaxial layers 2 from down toward
On be followed successively by n type gallium nitride layer 21, quantum well layer 22 and p-type gallium nitride layer 23.It is carved using photoetching and dry method after forming LED chip
For erosion technology by the region etch in the middle part of chip to n type gallium nitride layer 21, etching depth is 0.5~1.5 micron.
S2：The subregion of LED chip is etched to substrate using photoetching technique and lithographic technique；With photoetching technique and quarter
The etching depth that the subregion of LED chip is etched to Sapphire Substrate by erosion technology is 5~10 microns.
S3：Au layers of formation gold solder pad are grown on substrate；The growth thickness of gold solder pad is 15000~25000 angstroms.
S4：Photoelectric detector chip is welded on gold solder pad；4 chip of photodetector welded on gold solder pad 3 is arsenic
Change gallium base detector.The structure of GaAs base detector sequentially consists of gallium arsenide substrate 41, U-shaped gallium arsenide layer 42, N-type
Gallium arsenide layer 43, U-shaped gallium arsenide layer 44 and p type gaas layer 45.
S5：Grow electrode.The specific method of growth electrode is using vapor deposition or sputtering technology in p-type gallium nitride 23 and N
Au layers, which are grown, on type gallium nitride 21 is respectively formed gold electrode.
To ensure that the accuracy detector chip for receiving optical signal needs the geometric center position for being welded on substrate, deviation is not
It can exceed that 20 microns.LED epitaxial layers are symmetrical design in chip design, and the whole light extraction of chip can be ensured close in chip
The heart is conducive to the transmitting and reception of chip optical-signal.
There is the chip for emitting and receiving optical signal function, including substrate 1, detection using what above-mentioned production method was produced
Device chip 4 and the LED epitaxial layers 2 for being symmetricly set on 1 center both sides of substrate are provided with gold solder pad 3 at the center of substrate 1, detect
Device chip 4 is welded on gold solder pad 3, and the top of LED epitaxial layers 2 and detector chip 4 is both provided with electrode.
LED epitaxial layers form LED chip with substrate and are provided with detector chip at the center of substrate for shining, and use
In the light that reception LED is sent out, LED chip and detector are attached in the same chip, chip volume smaller, convenient for narrow
The use in space, and the light fed back to can not have to carry out secondary light path design, save according to luminous light path backtracking
Prodigious light path design expense.
To ensure that the accuracy detector chip for receiving optical signal needs the geometric center position for being welded on substrate, deviation is not
It can exceed that 20 microns.LED epitaxial layers are symmetrical design in chip design, and the whole light extraction of chip can be ensured close in chip
The heart is conducive to the transmitting and reception of chip optical-signal.
Substrate 1 is Sapphire Substrate, and LED epitaxial layers 2 sequentially consist of n type gallium nitride layer 21,22 and of quantum well layer
The overall thickness of p-type gallium nitride layer 23, LED epitaxial layers 2 is 5~10 microns.
Detector chip 4 is in silicon-based detector chip, GaAs base detector chip and potassium nitride base detector chip
One kind.Detector chip according to the wave band of feedback light can select silicon-based detector chip, GaAs base detector chip and
One kind in potassium nitride base detector chip.
Detector chip 4 is GaAs base detector chip, and the structure of GaAs base detector chip is from bottom to up successively
For gallium arsenide substrate 41, U-shaped gallium arsenide layer 42, n type gaas layer 43, U-shaped gallium arsenide layer 44 and p type gaas layer 45.
Electrode on LED epitaxial layers 2 includes shine N electrode 24 and luminous P electrode 25, and the N electrode 24 that shines is arranged in N-type nitrogen
Change on gallium layer 21, and the luminous N electrode 24 of 1 center both sides of substrate is centrosymmetric with the center of substrate 1, the P electrode that shines 25
It is arranged on p-type gallium nitride layer 23, and the luminous P electrode 25 of 1 center both sides of substrate is centrosymmetric with the center of substrate 1.
Electrode in the chip of the present invention is arranged symmetrically, and the intersection of circuit can be avoided in wiring and causes short circuit.
P electrode 46 is provided on detector chip 4, P electrode 46 is arranged on the p type gaas layer 45 of detector chip 4.
The second weld pad 5 is additionally provided on substrate 1.
Although reference be made herein to invention has been described for multiple explanatory embodiments of the invention, however, it is to be understood that
Those skilled in the art can be designed that a lot of other modification and implementations, these modifications and implementations will be fallen in this Shen
It please be within disclosed scope and spirit.More specifically, disclose in the application, drawings and claims in the range of, can
With the building block and/or a variety of variations and modifications of layout progress to theme combination layout.In addition to building block and/or layout
Outside the modification and improvement of progress, to those skilled in the art, other purposes also will be apparent.
Claims (10)
1. a kind of having the chip for emitting and receiving optical signal function, it is characterised in that：Including substrate（1）, detector chip（4）
Be symmetricly set on substrate（1）The LED epitaxial layers of center both sides（2）, the substrate（1）Center at be provided with gold solder pad（3）,
The photoelectric detector chip（4）It is welded on gold solder pad（3）On, the LED epitaxial layers（2）And photoelectric detector chip（4）'s
Top is both provided with electrode.
2. according to claim 1 have the chip for emitting and receiving optical signal function, it is characterised in that：The substrate
（1）For Sapphire Substrate, the LED epitaxial layers（2）Sequentially consist of n type gallium nitride layer（21）, quantum well layer（22）And P
Type gallium nitride layer（23）, the LED epitaxial layers（2）Overall thickness be 5~10 microns.
3. according to claim 1 have the chip for emitting and receiving optical signal function, it is characterised in that：The photoelectricity is visited
Survey device chip（4）Structure for GaAs base detector chip, the GaAs base detector chip sequentially consists of arsenic
Change gallium substrate（41）, U-shaped gallium arsenide layer（42）, n type gaas layer（43）, U-shaped gallium arsenide layer（44）And p type gaas layer
（45）.
4. a kind of production method with the chip for emitting and receiving optical signal function, it is characterised in that：Include the following steps：
S1：In substrate（1）Upper growth LED epitaxial layers（2）Form LED chip；
S2：The subregion of LED chip is etched to Sapphire Substrate using photoetching technique and lithographic technique；
S3：In substrate（1）Au layers of formation gold solder pad of upper growth（3）；
S4：In gold solder pad（3）Upper welding photoelectric detector chip（4）；
S5：Grow electrode.
5. the production method with the chip for emitting and receiving optical signal function according to claim 4, it is characterised in that：
The substrate（1）For Sapphire Substrate, the LED epitaxial layers（2）Sequentially consist of n type gallium nitride layer（21）, Quantum Well
Layer（22）With p-type gallium nitride layer（23）.
6. the production method with the chip for emitting and receiving optical signal function according to claim 5, it is characterised in that：
The region etch in the middle part of chip to N-type is nitrogenized using photoetching and dry etching technology after forming LED chip in the S1 steps
Gallium layer（21）, etching depth is 0.5~1.5 micron.
7. the production method with the chip for emitting and receiving optical signal function according to claim 4, it is characterised in that：
In the S2 steps, the subregion of LED chip is etched to the etching of Sapphire Substrate using photoetching technique and lithographic technique
Depth is 5~10 microns.
8. the production method with the chip for emitting and receiving optical signal function according to claim 4, it is characterised in that：
Gold solder pad in the S3 steps（3）Growth thickness be 15000~25000 angstroms.
9. the production method with the chip for emitting and receiving optical signal function according to claim 4, it is characterised in that：
In gold solder pad in the S4 steps（3）The photoelectric detector chip of upper welding（4）For GaAs base detector；The GaAs base
The structure of detector sequentially consists of gallium arsenide substrate（41）, U-shaped gallium arsenide layer（42）, n type gaas layer（43）, it is U-shaped
Gallium arsenide layer（44）And p type gaas layer（45）.
10. the production method with the chip for emitting and receiving optical signal function according to claim 9, feature exist
In：The specific method that electrode is grown in the S5 steps is using vapor deposition or sputtering technology in p-type gallium nitride layer（23）And N-type
Gallium nitride layer（21）Au layers of upper growth is respectively formed gold electrode.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810055541.2A CN108364909B (en) | 2018-01-19 | 2018-01-19 | Chip with functions of transmitting and receiving optical signals and manufacturing method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810055541.2A CN108364909B (en) | 2018-01-19 | 2018-01-19 | Chip with functions of transmitting and receiving optical signals and manufacturing method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN108364909A true CN108364909A (en) | 2018-08-03 |
| CN108364909B CN108364909B (en) | 2021-01-26 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201810055541.2A Active CN108364909B (en) | 2018-01-19 | 2018-01-19 | Chip with functions of transmitting and receiving optical signals and manufacturing method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN108364909B (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112082624A (en) * | 2020-09-08 | 2020-12-15 | 南方科技大学 | Liquid level detection device and detection method thereof |
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| CN1282109A (en) * | 1999-07-27 | 2001-01-31 | 夏普公司 | Optical receiving device integrated with circuit and manufacturing method thereof |
| US20030048239A1 (en) * | 2000-05-15 | 2003-03-13 | Cok Ronald S. | Self-illuminating imaging device |
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| CN112082624A (en) * | 2020-09-08 | 2020-12-15 | 南方科技大学 | Liquid level detection device and detection method thereof |
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| Publication number | Publication date |
|---|---|
| CN108364909B (en) | 2021-01-26 |
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