CN202906868U - Leadless large power light metal oxide semiconductor (MOS) solid state relay - Google Patents
Leadless large power light metal oxide semiconductor (MOS) solid state relay Download PDFInfo
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- CN202906868U CN202906868U CN 201220539045 CN201220539045U CN202906868U CN 202906868 U CN202906868 U CN 202906868U CN 201220539045 CN201220539045 CN 201220539045 CN 201220539045 U CN201220539045 U CN 201220539045U CN 202906868 U CN202906868 U CN 202906868U
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- relay
- solid state
- ceramic
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Abstract
A leadless large power light MOS solid state relay is composed of a ceramic metallization tube shell and a metal tube cap; the bottom of the ceramic metallization tube shell possesses a slice-shaped metal base pin and the upper port possesses an annular metal welding layer, a relay input part and a relay output part are arranged in the interior of the ceramic metallization tube shell, and the input end of the relay input part and the output end of the relay output part are electrically connected with the slice-shaped metal base pin separately; the metal tube cap is welded on the metal welding layer to seal the relay, the relay input part is composed of light emitting diode chips V1 and V2, and the relay output part is composed of a power field effect transistor chip V3 and photovoltaic cell assembly chips D1 and D2. The leadless large power light MOS solid state relay of the utility model is concise in appearance, compact in volume and low in height, and is suitable for the high density integrated SMD printed-circuit board design.
Description
Technical field
The utility model belongs to relay system technology for making field, is specifically related to a kind of without the high-power smooth MOS solid state relay of lead-in wire.
Background technology
Light MOS solid state relay is the noncontacting switch device of a kind of photoelectricity isolation, power field effect pipe output.It is the microminiaturized solid state relay with speed-sensitive switch function that becomes one as output device as isolation coupling device, power field effect pipe (MOSFET) with light-emitting diode (LED), photovoltaic diode array (PVDA).Have that volume is little, the life-span is long, reliability is high, the characteristics such as adverse environment resistant, input and output voltage isolation characteristic are good, now replacing in a large number the conventional small relay, be widely used in the electric control circuit of the fields such as automatic control, compunication and terminal installation and space flight, aviation, land equipment, market prospects are wide.Traditional light MOS method for installing relay is dual-in-line (DIP encapsulation) or two kinds of forms of surface mount (SMD encapsulation).The light MOS relay of DIP encapsulation because printed circuit board must be designed to the welding hole form, therefore is not suitable for full Surface Mount integrated circuit; The light MOS relay of SMD encapsulation though can be applied to full Surface Mount integrated circuit, because the leg area occupied is larger, is not suitable for intensive Surface Mount integrated circuit.
Summary of the invention
The technical problem that the utility model solves: design the high-power smooth MOS solid state relay of a kind of nothing lead-in wire, be fit to High Density Integration surface mount design of printed circuit board, product adopts the melting welding hermetically-sealed construction, full chip assembling, compact conformation, sealing is good, output current is large, and reliability is high.
Technical solution of the present utility model: a kind of without the high-power smooth MOS solid state relay of lead-in wire, consisted of by ceramic metalized envelope and metal pipe cap, the bottom of ceramic metalized envelope has the sheet metal pin, has the annular metal weld layer on the upper port of ceramic metalized envelope, relay importation and relay output are housed in the ceramic metalized envelope, the relay importation is positioned at the top of relay output, make between relay importation and the relay output and form electrical isolation, and the output of the input of relay importation and relay output is electrically connected with the sheet metal pin respectively; Described metal pipe cap is welded on the metal solder layer relay is sealed; Have four sheet metal pins on the bottom surface of described ceramic metalized envelope; Described relay importation is comprised of light-emitting diode chip for backlight unit V1 and V2; The relay output is comprised of power field effect die V3 and photovoltaic cell assembly chip D1, D2.
Have pad A, pad B, pad C, pad D, pad F, pad G and pad I on the inner chamber bottom surface of described ceramic metalized envelope, photovoltaic cell assembly chip D1, D2 adopt conductive silver glue to be bonded in respectively on pad I and the pad F, the D utmost point of power field effect die V3 is welded on the pad C, and between the power field effect die V3, photovoltaic cell assembly chip D1, D2 by gold wire bonding line 9 and pad A, pad B, pad D and pad G electrical connection; The boss that has two symmetries on the sidewall before and after the described ceramic metalized envelope inner chamber right-hand member, and the upper surface of two boss has respectively pad H and pad E; Has pad a on the lower surface of ceramic circuit board, pad b and pad c, light-emitting diode chip for backlight unit V1, the negative pole of V2 adopts conductive silver glue to be bonded in respectively on pad b and the pad c, light-emitting diode chip for backlight unit V1, be electrically connected by the gold wire bonding line between the V2, pad a on ceramic circuit board 7 lower surfaces and pad c are bonding with pad H and the pad E employing conductive silver glue of two boss upper surfaces respectively, and light-emitting diode chip for backlight unit V1, V2 lays respectively at photovoltaic cell assembly chip D1, the top of D2 makes light-emitting diode chip for backlight unit V1, V2 respectively with photovoltaic cell assembly chip D1, physical isolation between the D2; Described pad A, pad C, pad E, pad H respectively with the electrical connection of corresponding sheet metal pin.
The surface of described sheet metal pin is gold-plated processing all; The faying face of the surface of described annular metal weld layer and metal pipe cap and annular metal weld layer is gold-plated processing all.All gold-plated processing of surface of all pads in the described ceramic metalized envelope.
The advantage that the utility model compared with prior art has and effect:
1, the utility model profile is succinct, and the no-output lead-in wire is fit to High Density Integration surface mount design of printed circuit board.
2, the utility model is small size, low clearance, high-power product, and output current is 5A.
3, the utility model adopts hybrid microcircuit technique, realizes full chip assembling, compact conformation, and reliability is high.
4, ceramic metalized envelope of the present utility model adopts parallel welded seam sealing structure with metal pipe cap, and sealing is good.
5, the utility model adopts the ceramic metalized envelope of novel high-power output, and shell structure and electric conducting material satisfy the requirement of high-power output.
Description of drawings
Fig. 1 is the utility model circuit theory diagrams, Fig. 2 is the utility model profile schematic diagram, Fig. 3 is the utility model relay importation structural representation, and Fig. 4 is the utility model relay output structural representation, and Fig. 5 is the utility model relay internal structure cutaway view.
Embodiment
1,2,3,4,5 a kind of embodiment of the present utility model is described by reference to the accompanying drawings.
A kind of without the high-power smooth MOS solid state relay of lead-in wire, consisted of by ceramic metalized envelope 3 and metal pipe cap 4, the bottom of ceramic metalized envelope 3 has four sheet metal pins 5, has annular metal weld layer 6 on the upper port of ceramic metalized envelope 3, relay importation 1 and relay output 2 are housed in the ceramic metalized envelope 3, relay importation 1 is positioned at the top of relay output 2, make between relay importation 1 and the relay output 2 and form electrical isolation, and the output of the input of relay importation 1 and relay output 2 is electrically connected with sheet metal pin 5 respectively; Described metal pipe cap 4 is welded on the metal solder layer 6 relay is sealed; Have four sheet metal pins 5 on the bottom surface of described ceramic metalized envelope 3; Described relay importation 1 is comprised of light-emitting diode chip for backlight unit V1 and V2; Relay output 2 is comprised of power field effect die V3 and photovoltaic cell assembly chip D1, D2.
Have pad A, pad B, pad C, pad D, pad F, pad G and pad I on the inner chamber bottom surface of described ceramic metalized envelope 3, photovoltaic cell assembly chip D1, D2 adopt conductive silver glue to be bonded in respectively on pad I and the pad F, the D utmost point of power field effect die V3 is welded on the pad C, and between the power field effect die V3, photovoltaic cell assembly chip D1, D2 by gold wire bonding line 9 and pad A, pad B, pad D and pad G electrical connection; The boss 8 that has two symmetries on the sidewall before and after the described ceramic metalized envelope 3 inner chamber right-hand members, and the upper surface of two boss 8 has respectively pad H and pad E; Has pad a on the lower surface of ceramic circuit board 7, pad b and pad c, light-emitting diode chip for backlight unit V1, the negative pole of V2 adopts conductive silver glue to be bonded in respectively on pad b and the pad c, light-emitting diode chip for backlight unit V1, be electrically connected by gold wire bonding line 9 between the V2, pad a on ceramic circuit board 7 lower surfaces and pad c are bonding with pad H and the pad E employing conductive silver glue of two boss 8 upper surfaces respectively, and light-emitting diode chip for backlight unit V1, V2 lays respectively at photovoltaic cell assembly chip D1, the top of D2 makes light-emitting diode chip for backlight unit V1, V2 respectively with photovoltaic cell assembly chip D1, physical isolation between the D2; Described pad A, pad C, pad E, pad H respectively with 5 electrical connections of corresponding sheet metal pin.The surface of described sheet metal pin 5 is gold-plated processing all; All gold-plated processing of faying face of the surface of described annular metal weld layer 6 and metal pipe cap 4 and annular metal weld layer 6.All gold-plated processing of surface of all pads in the described ceramic metalized envelope 3.Can pass through large electric current between pad A, pad C and the corresponding sheet metal pin 5.
Claims (3)
- One kind without the lead-in wire high-power smooth MOS solid state relay, described relay is made of ceramic metalized envelope (3) and metal pipe cap (4), the bottom of ceramic metalized envelope (3) has sheet metal pin (5), has annular metal weld layer (6) on the upper port of ceramic metalized envelope (3), relay importation (1) and relay output (2) are housed in the ceramic metalized envelope (3), relay importation (1) is positioned at the top of relay output (2), make between relay importation (1) and the relay output (2) and form electrical isolation, and the output of the input of relay importation (1) and relay output (2) is electrically connected with sheet metal pin (5) respectively; Described metal pipe cap (4) is welded on metal solder layer (6) and upward relay is sealed; It is characterized in that: have four sheet metal pins (5) on the bottom surface of described ceramic metalized envelope (3); Described relay importation (1) is comprised of light-emitting diode chip for backlight unit V1 and V2; Relay output (2) is comprised of power field effect die V3 and photovoltaic cell assembly chip D1, D2.
- 2. described without the high-power smooth MOS solid state relay of lead-in wire according to claims 1, it is characterized in that: have pad A on the inner chamber bottom surface of described ceramic metalized envelope (3), pad B, pad C, pad D, pad F, pad G and pad I, photovoltaic cell assembly chip D1, D2 adopts conductive silver glue to be bonded in respectively on pad I and the pad F, the D utmost point of power field effect die V3 is welded on the pad C, and power field effect die V3, photovoltaic cell assembly chip D1, pass through gold wire bonding line (9) and pad A between the D2, pad B, pad D and pad G electrical connection; The boss (8) that has two symmetries on the sidewall before and after described ceramic metalized envelope (3) the inner chamber right-hand member, and the upper surface of two boss (8) has respectively pad H and pad E; Has pad a on the lower surface of ceramic circuit board (7), pad b and pad c, light-emitting diode chip for backlight unit V1, the negative pole of V2 adopts conductive silver glue to be bonded in respectively on pad b and the pad c, light-emitting diode chip for backlight unit V1, be electrically connected by gold wire bonding line (9) between the V2, pad a on ceramic circuit board (7) lower surface and pad c are bonding with pad H and the pad E employing conductive silver glue of two boss (8) upper surface respectively, and light-emitting diode chip for backlight unit V1, V2 lays respectively at photovoltaic cell assembly chip D1, the top of D2 makes light-emitting diode chip for backlight unit V1, V2 respectively with photovoltaic cell assembly chip D1, physical isolation between the D2; Described pad A, pad C, pad E, pad H respectively with the electrical connection of corresponding sheet metal pin (5).
- 3. according to claims 1 or the high-power smooth MOS solid state relay of 2 described nothing lead-in wires, it is characterized in that: all gold-plated processing of the surface of described sheet metal pin (5); All gold-plated processing of faying face of the surface of described annular metal weld layer (6) and metal pipe cap (4) and annular metal weld layer (6); All gold-plated processing of surface of all pads in the described ceramic metalized envelope (3).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201220539045 CN202906868U (en) | 2012-10-19 | 2012-10-19 | Leadless large power light metal oxide semiconductor (MOS) solid state relay |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201220539045 CN202906868U (en) | 2012-10-19 | 2012-10-19 | Leadless large power light metal oxide semiconductor (MOS) solid state relay |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN202906868U true CN202906868U (en) | 2013-04-24 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 201220539045 Expired - Fee Related CN202906868U (en) | 2012-10-19 | 2012-10-19 | Leadless large power light metal oxide semiconductor (MOS) solid state relay |
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| CN (1) | CN202906868U (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107154389A (en) * | 2017-03-29 | 2017-09-12 | 江苏捷捷微电子股份有限公司 | The minitype paster solid-state relay and its manufacture method of a kind of high heat-sinking capability |
| CN115101515A (en) * | 2022-08-25 | 2022-09-23 | 中国电子科技集团公司第五十八研究所 | Photoelectric coupler packaging structure and packaging method thereof |
-
2012
- 2012-10-19 CN CN 201220539045 patent/CN202906868U/en not_active Expired - Fee Related
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107154389A (en) * | 2017-03-29 | 2017-09-12 | 江苏捷捷微电子股份有限公司 | The minitype paster solid-state relay and its manufacture method of a kind of high heat-sinking capability |
| CN107154389B (en) * | 2017-03-29 | 2023-07-21 | 捷捷半导体有限公司 | Small-sized patch solid-state relay with high heat dissipation capacity and manufacturing method thereof |
| CN115101515A (en) * | 2022-08-25 | 2022-09-23 | 中国电子科技集团公司第五十八研究所 | Photoelectric coupler packaging structure and packaging method thereof |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20130424 Termination date: 20161019 |
|
| CF01 | Termination of patent right due to non-payment of annual fee |