CN102034648B - 开关装置 - Google Patents
开关装置 Download PDFInfo
- Publication number
- CN102034648B CN102034648B CN201010500702.8A CN201010500702A CN102034648B CN 102034648 B CN102034648 B CN 102034648B CN 201010500702 A CN201010500702 A CN 201010500702A CN 102034648 B CN102034648 B CN 102034648B
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- China
- Prior art keywords
- conducting element
- contact
- switching devices
- place
- devices according
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 238000000034 method Methods 0.000 title abstract description 12
- 239000007769 metal material Substances 0.000 claims abstract description 39
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 43
- 229910045601 alloy Inorganic materials 0.000 claims description 24
- 239000000956 alloy Substances 0.000 claims description 24
- 239000000758 substrate Substances 0.000 claims description 22
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 21
- 239000010937 tungsten Substances 0.000 claims description 21
- 230000004927 fusion Effects 0.000 claims description 20
- 229910052759 nickel Inorganic materials 0.000 claims description 19
- 229910052721 tungsten Inorganic materials 0.000 claims description 19
- 229910001080 W alloy Inorganic materials 0.000 claims description 7
- 229910000990 Ni alloy Inorganic materials 0.000 claims description 6
- 230000010355 oscillation Effects 0.000 claims description 6
- 239000005300 metallic glass Substances 0.000 claims description 5
- 230000004888 barrier function Effects 0.000 claims description 4
- 230000008859 change Effects 0.000 claims description 4
- 230000001186 cumulative effect Effects 0.000 claims description 4
- 230000005669 field effect Effects 0.000 claims description 4
- 239000000203 mixture Substances 0.000 claims 2
- 238000002844 melting Methods 0.000 abstract 1
- 230000008018 melting Effects 0.000 abstract 1
- 230000036962 time dependent Effects 0.000 abstract 1
- 238000010276 construction Methods 0.000 description 49
- 239000000463 material Substances 0.000 description 27
- 229910052751 metal Inorganic materials 0.000 description 13
- 239000002184 metal Substances 0.000 description 13
- 230000008569 process Effects 0.000 description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 238000012545 processing Methods 0.000 description 6
- 239000000654 additive Substances 0.000 description 5
- 230000000996 additive effect Effects 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 4
- 239000010949 copper Substances 0.000 description 4
- 239000013078 crystal Substances 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 230000033001 locomotion Effects 0.000 description 4
- 230000007246 mechanism Effects 0.000 description 4
- 238000000059 patterning Methods 0.000 description 4
- 229920002120 photoresistant polymer Polymers 0.000 description 4
- 238000005728 strengthening Methods 0.000 description 4
- 239000010936 titanium Substances 0.000 description 4
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 3
- 239000004020 conductor Substances 0.000 description 3
- 238000010891 electric arc Methods 0.000 description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 239000010931 gold Substances 0.000 description 3
- 230000000630 rising effect Effects 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 235000012239 silicon dioxide Nutrition 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- 229910000601 superalloy Inorganic materials 0.000 description 3
- 229910052719 titanium Inorganic materials 0.000 description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000009713 electroplating Methods 0.000 description 2
- 239000011572 manganese Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229910052763 palladium Inorganic materials 0.000 description 2
- 238000001259 photo etching Methods 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 238000009827 uniform distribution Methods 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910000808 amorphous metal alloy Inorganic materials 0.000 description 1
- -1 and wherein Inorganic materials 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 229910052790 beryllium Inorganic materials 0.000 description 1
- ATBAMAFKBVZNFJ-UHFFFAOYSA-N beryllium atom Chemical compound [Be] ATBAMAFKBVZNFJ-UHFFFAOYSA-N 0.000 description 1
- 230000033228 biological regulation Effects 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 239000002178 crystalline material Substances 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 230000008030 elimination Effects 0.000 description 1
- 238000003379 elimination reaction Methods 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000005764 inhibitory process Effects 0.000 description 1
- 229910000765 intermetallic Inorganic materials 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 230000002045 lasting effect Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 230000004807 localization Effects 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
- 239000000696 magnetic material Substances 0.000 description 1
- 238000002595 magnetic resonance imaging Methods 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000005192 partition Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
- 239000012779 reinforcing material Substances 0.000 description 1
- VSZWPYCFIRKVQL-UHFFFAOYSA-N selanylidenegallium;selenium Chemical compound [Se].[Se]=[Ga].[Se]=[Ga] VSZWPYCFIRKVQL-UHFFFAOYSA-N 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 230000011664 signaling Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000006104 solid solution Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
- H01H1/00—Contacts
- H01H1/0036—Switches making use of microelectromechanical systems [MEMS]
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B3/00—Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
- H01H59/00—Electrostatic relays; Electro-adhesion relays
- H01H59/0009—Electrostatic relays; Electro-adhesion relays making use of micromechanics
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
- H01H1/00—Contacts
- H01H1/0036—Switches making use of microelectromechanical systems [MEMS]
- H01H2001/0052—Special contact materials used for MEMS
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
- H01H1/00—Contacts
- H01H1/0036—Switches making use of microelectromechanical systems [MEMS]
- H01H2001/0084—Switches making use of microelectromechanical systems [MEMS] with perpendicular movement of the movable contact relative to the substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
- H01H2237/00—Mechanism between key and laykey
- H01H2237/004—Cantilever
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/49105—Switch making
Landscapes
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Micromachines (AREA)
- Contacts (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US12/565127 | 2009-09-23 | ||
| US12/565,127 US8354899B2 (en) | 2009-09-23 | 2009-09-23 | Switch structure and method |
| US12/565,127 | 2009-09-23 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102034648A CN102034648A (zh) | 2011-04-27 |
| CN102034648B true CN102034648B (zh) | 2014-06-25 |
Family
ID=43303797
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201010500702.8A Active CN102034648B (zh) | 2009-09-23 | 2010-09-21 | 开关装置 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US8354899B2 (cg-RX-API-DMAC7.html) |
| EP (1) | EP2315221B1 (cg-RX-API-DMAC7.html) |
| JP (1) | JP2011091029A (cg-RX-API-DMAC7.html) |
| KR (1) | KR101734547B1 (cg-RX-API-DMAC7.html) |
| CN (1) | CN102034648B (cg-RX-API-DMAC7.html) |
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8779886B2 (en) * | 2009-11-30 | 2014-07-15 | General Electric Company | Switch structures |
| WO2015199721A1 (en) * | 2014-06-27 | 2015-12-30 | Intel Corporation | Magnetic nanomechanical devices for stiction compensation |
| FR3027448B1 (fr) * | 2014-10-21 | 2016-10-28 | Airmems | Commutateur microelectromecanique robuste |
| US9362608B1 (en) | 2014-12-03 | 2016-06-07 | General Electric Company | Multichannel relay assembly with in line MEMS switches |
| US9663347B2 (en) * | 2015-03-02 | 2017-05-30 | General Electric Company | Electromechanical system substrate attachment for reduced thermal deformation |
| US9466452B1 (en) | 2015-03-31 | 2016-10-11 | Stmicroelectronics, Inc. | Integrated cantilever switch |
| FR3034567B1 (fr) | 2015-03-31 | 2017-04-28 | St Microelectronics Rousset | Dispositif metallique a piece(s) mobile(s) ameliore loge dans une cavite de la partie d'interconnexion (" beol ") d'un circuit integre |
| US9845235B2 (en) * | 2015-09-03 | 2017-12-19 | General Electric Company | Refractory seed metal for electroplated MEMS structures |
| KR101885996B1 (ko) * | 2017-04-18 | 2018-08-07 | 국민대학교산학협력단 | 3-d 프린터로 제작되는 mems 칸틸레버 스위치의 제조방법 |
| GB2564434B (en) | 2017-07-10 | 2020-08-26 | Ge Aviat Systems Ltd | Power distribution switch for a power distribution system |
| DE102022200337A1 (de) * | 2022-01-13 | 2023-07-13 | Robert Bosch Gesellschaft mit beschränkter Haftung | MEMS-Relais |
Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5258591A (en) * | 1991-10-18 | 1993-11-02 | Westinghouse Electric Corp. | Low inductance cantilever switch |
| US6153839A (en) * | 1998-10-22 | 2000-11-28 | Northeastern University | Micromechanical switching devices |
| US6624003B1 (en) * | 2002-02-06 | 2003-09-23 | Teravicta Technologies, Inc. | Integrated MEMS device and package |
| US6699379B1 (en) * | 2002-11-25 | 2004-03-02 | Industrial Technology Research Institute | Method for reducing stress in nickel-based alloy plating |
| US7126220B2 (en) * | 2002-03-18 | 2006-10-24 | Nanonexus, Inc. | Miniaturized contact spring |
| CN1875447A (zh) * | 2003-10-31 | 2006-12-06 | 皇家飞利浦电子股份有限公司 | 射频微机电系统及其制造方法 |
| US7247035B2 (en) * | 2000-06-20 | 2007-07-24 | Nanonexus, Inc. | Enhanced stress metal spring contactor |
| US7393594B2 (en) * | 2003-11-14 | 2008-07-01 | Tohru Yamasaki | Laminated metal thin plate formed by electrodeposition and method of producing the same |
| EP2073236A1 (en) * | 2007-12-20 | 2009-06-24 | General Electric Company | MEMS Microswitch having a conductive mechanical stop |
Family Cites Families (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3612081B2 (ja) * | 1992-01-31 | 2005-01-19 | 株式会社東芝 | 導電コネクタ及び高強度ばね |
| CN1040049C (zh) * | 1993-02-18 | 1998-09-30 | 西门子公司 | 具有混合驱动的微型机械继电器 |
| US20030016417A1 (en) * | 2001-07-17 | 2003-01-23 | Cruise Lee | Wireless pointing and remote-controlling device for briefing |
| ATE352854T1 (de) | 2001-11-09 | 2007-02-15 | Wispry Inc | Mems-einrichtung mit kontakt und abstandshöckern und damit zusammenhängende verfahren |
| US6686820B1 (en) * | 2002-07-11 | 2004-02-03 | Intel Corporation | Microelectromechanical (MEMS) switching apparatus |
| JP2005536014A (ja) * | 2002-08-08 | 2005-11-24 | エックスコム ワイアレス インコーポレイテッド | マルチモルフ・アクチュエータと静電ラッチメカニズムとを有するマイクロ・ファブリケーションされたリレー |
| US20040154925A1 (en) * | 2003-02-11 | 2004-08-12 | Podlaha Elizabeth J. | Composite metal and composite metal alloy microstructures |
| JP2005113189A (ja) * | 2003-10-07 | 2005-04-28 | Yoshihiko Yokoyama | ナノ組織化合金 |
| JP4366310B2 (ja) * | 2004-12-24 | 2009-11-18 | シャープ株式会社 | マイクロ接点開閉器および無線通信機器 |
| PT1705676E (pt) * | 2005-03-21 | 2008-02-07 | Delfmems | Interruptor rf mems com uma membrana de comutação livre e flexível. |
| US7663456B2 (en) * | 2005-12-15 | 2010-02-16 | General Electric Company | Micro-electromechanical system (MEMS) switch arrays |
| US7872432B2 (en) * | 2006-03-20 | 2011-01-18 | Innovative Micro Technology | MEMS thermal device with slideably engaged tether and method of manufacture |
| US7812703B2 (en) * | 2006-03-23 | 2010-10-12 | Innovative Micro Technology | MEMS device using NiMn alloy and method of manufacture |
| US7688167B2 (en) * | 2006-10-12 | 2010-03-30 | Innovative Micro Technology | Contact electrode for microdevices and etch method of manufacture |
| WO2009067222A1 (en) * | 2007-11-19 | 2009-05-28 | Xcom Wireless, Inc. | Microfabricated cantilever slider with asymmetric spring constant |
-
2009
- 2009-09-23 US US12/565,127 patent/US8354899B2/en active Active
-
2010
- 2010-09-09 JP JP2010201497A patent/JP2011091029A/ja active Pending
- 2010-09-17 EP EP10177345A patent/EP2315221B1/en active Active
- 2010-09-17 KR KR1020100091557A patent/KR101734547B1/ko active Active
- 2010-09-21 CN CN201010500702.8A patent/CN102034648B/zh active Active
Patent Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5258591A (en) * | 1991-10-18 | 1993-11-02 | Westinghouse Electric Corp. | Low inductance cantilever switch |
| US6153839A (en) * | 1998-10-22 | 2000-11-28 | Northeastern University | Micromechanical switching devices |
| US7247035B2 (en) * | 2000-06-20 | 2007-07-24 | Nanonexus, Inc. | Enhanced stress metal spring contactor |
| US6624003B1 (en) * | 2002-02-06 | 2003-09-23 | Teravicta Technologies, Inc. | Integrated MEMS device and package |
| US6809412B1 (en) * | 2002-02-06 | 2004-10-26 | Teravictu Technologies | Packaging of MEMS devices using a thermoplastic |
| US7126220B2 (en) * | 2002-03-18 | 2006-10-24 | Nanonexus, Inc. | Miniaturized contact spring |
| US6699379B1 (en) * | 2002-11-25 | 2004-03-02 | Industrial Technology Research Institute | Method for reducing stress in nickel-based alloy plating |
| CN1875447A (zh) * | 2003-10-31 | 2006-12-06 | 皇家飞利浦电子股份有限公司 | 射频微机电系统及其制造方法 |
| US7393594B2 (en) * | 2003-11-14 | 2008-07-01 | Tohru Yamasaki | Laminated metal thin plate formed by electrodeposition and method of producing the same |
| EP2073236A1 (en) * | 2007-12-20 | 2009-06-24 | General Electric Company | MEMS Microswitch having a conductive mechanical stop |
Also Published As
| Publication number | Publication date |
|---|---|
| KR101734547B1 (ko) | 2017-05-11 |
| CN102034648A (zh) | 2011-04-27 |
| US8354899B2 (en) | 2013-01-15 |
| US20110067983A1 (en) | 2011-03-24 |
| JP2011091029A (ja) | 2011-05-06 |
| EP2315221B1 (en) | 2012-11-14 |
| KR20110033055A (ko) | 2011-03-30 |
| EP2315221A1 (en) | 2011-04-27 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant |