CN102024747A - Method for manufacturing aluminium plug of power device - Google Patents
Method for manufacturing aluminium plug of power device Download PDFInfo
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- CN102024747A CN102024747A CN2009101955818A CN200910195581A CN102024747A CN 102024747 A CN102024747 A CN 102024747A CN 2009101955818 A CN2009101955818 A CN 2009101955818A CN 200910195581 A CN200910195581 A CN 200910195581A CN 102024747 A CN102024747 A CN 102024747A
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Abstract
The invention provides a method for manufacturing an aluminium plug of a power device, comprising the following steps: providing a semiconductor substrate; depositing an insulating layer on the semiconductor substrate; depositing a passivation layer on the insulating layer; respectively etching the passivation layer, the insulating layer and the semiconductor substrate to form a cup-type contact aperture; depositing a diffusion-resisting layer in the a cup-type contact aperture and on the surface of the passivation layer; filling the contact aperture with metallic aluminium to form an aluminium plug, wherein top width of the cup-type contact aperture is greater than bottom width of the cup-type contact aperture. The method for manufacturing the aluminium plug of the power device provided by the invention can effectively reduce the production cost, and the aluminium plug made by the method has a good resistance property.
Description
Technical field
The present invention relates to field of semiconductor manufacture, and be particularly related to a kind of aluminium connector manufacture method of power device.
Background technology
Along with the sustainable development of semiconductor fabrication, make semiconductor power device have trickleer pattern and higher integrated level (integration).Between the various patterns in semiconductor device, use contact structures usually so that electrically contacting between circuit arrangement or the interior articulamentum to be provided.Traditional contact structures can comprise and form a contact hole (contact hole) in interlayer dielectric layer, insert an electric conducting material subsequently again in this contact hole.
In recent years, because semiconductor device Highgrade integration day by day, the size of contact hole is tending towards dwindling.Along with the size of contact hole is dwindled, make that in the Metal Contact processing procedure metal of Shi Yonging can not be filled in the contact hole well before, produced the problem that contact resistance increases thus.Therefore, the aluminium with high conductivity is used as the metal of Metal Contact in handling.
But, because metallic aluminium step coverage property is poor, so be filled in unsatisfactorily in the undersized contact hole.As the way of head it off, at first the metal with step coverage property excellence comes filling contact hole inside, forms plain conductor by al deposition and etch process then.Because tungsten has excellent step coverage property, meet the performance requirement of filling contact hole metal, so become the main material of filling contact hole.Tungsten generally is used as connector, promptly form tungsten plug after, again in the top of tungsten AM aluminum metallization, form the metal interconnecting wires of duplex.
Please refer to Fig. 1～Fig. 4, the contact hole plug manufacture method of prior art specifically may further comprise the steps: prepare grid is arranged, deposition one insulating barrier 11 on the Semiconductor substrate 10 of source electrode and drain electrode, and it is carried out photoetching and etches contact hole 12; Deposition diffusion impervious layer 13 in contact hole 12 and on insulating barrier 11 surfaces; In contact hole 12, fill tungsten 14 to form tungsten plug by chemical vapor deposition (CVD) technology; Make the tungsten plug surface contour by chemico-mechanical polishing, make thereby finish contact hole plug with insulating barrier 11.Carry out ground floor metal on the contact hole 12 afterwards again, for example the making (not shown) of aluminum metal layer.
The manufacture craft of above-mentioned contact hole plug is comparatively complicated, increased production cost, simultaneously, owing to use tungsten plug contact hole connection aluminum metal and Semiconductor substrate can form two contact resistances, and the resistivity of tungsten itself (about 6 μ Ω cm to 12 μ Ω cm) is very big, the about height of its resistivity is to about 6 times to 7 times of aluminium, thereby make the resistance ratio of the contact hole plug that employing tungsten and aluminum are done directly use the resistance of the connector contact hole of aluminum work to want big, cause the response cycle of device elongated, promptly the service speed of device reduces.
Summary of the invention
The present invention proposes a kind of aluminium connector manufacture method of power device, and it can effectively reduce production costs, and has good resistance characteristic.
In order to achieve the above object, the present invention proposes a kind of aluminium connector manufacture method of power device, comprises the following steps:
Semi-conductive substrate is provided;
Depositing insulating layer on described Semiconductor substrate;
Deposit passivation layer on described insulating barrier;
Respectively passivation layer, insulating barrier and Semiconductor substrate are carried out etching and form cup type contact hole;
In described cup type contact hole, reach on the passivation layer surface and deposit diffusion impervious layer;
In contact hole, fill metallic aluminium with formation aluminium connector,
The top width of wherein said cup type contact hole is greater than bottom width.
Optionally, the material of described insulating barrier is a silicon dioxide.
Optionally, the thickness of described insulating barrier is 1900 dusts～2100 dusts.
Optionally, the material of described passivation layer is a boron-phosphorosilicate glass.
Optionally, the thickness of described passivation layer is 4500 dusts～5500 dusts.
Optionally, describedly passivation layer, insulating barrier and Semiconductor substrate carried out the step that etching forms cup type contact hole comprise:
Passivation layer is carried out dry etching,, form opening wide at the top and narrow at the bottom up to exposing insulating barrier, thus the top width of definition cup type contact hole;
The surface of insulating layer that exposes is carried out wet etching, the top depth of definition cup type contact hole;
Continuation is carried out dry etching up to exposing Semiconductor substrate to insulating barrier, and the bottom width of definition cup type contact hole;
The Semiconductor substrate that exposes is carried out etching, thus the bottom degree of depth of definition cup type contact hole.
Optionally, the top width of described cup type contact hole is 4500 dusts～5500 dusts.
Optionally, the top depth of described cup type contact hole is 7000 dusts～9000 dusts.
Optionally, the bottom width of described cup type contact hole is 3400 dusts～3600 dusts.
Optionally, the bottom degree of depth of described cup type contact hole is 3000 dusts～3600 dusts.
Optionally, behind the formation cup type contact hole described structure is carried out wet etch process, to remove defective and to make its surfacing.
Optionally, described diffusion impervious layer comprises bottom titanium coating, titanium nitride layer and top titanium coating.
Optionally, the thickness of described bottom titanium coating, titanium nitride layer and top titanium coating is followed successively by 250 dusts～350 dusts, 150 dusts～250 dusts and 150 dusts～250 dusts.
Optionally, the step that the chemical vapour deposition (CVD) metallic aluminium forms the aluminium connector on the described diffusion impervious layer in contact hole comprises:
Chemical vapour deposition (CVD) cold metal aluminium on the diffusion impervious layer in contact hole;
Chemical vapour deposition (CVD) thermometal aluminium on cold metal aluminium.
Optionally, the temperature of described cold metal aluminium is 40 degrees centigrade～80 degrees centigrade.
Optionally, the thickness of described cold metal aluminium is 1000 dusts～1500 dusts.
Optionally, the temperature of described thermometal aluminium is greater than 400 degrees centigrade.
Optionally, the thickness of described thermometal aluminium is 8000 dusts～10000 dusts.
The present invention proposes a kind of aluminium connector manufacture method of power device, adopted the contact hole of cup type, aluminum metal injection contact hole is convenient in its open top more greatly, though the bottom opening size is little, but adopted cold aluminum metal as Seed Layer, make follow-up hot aluminum metal flow into the lower end by the tension force and the gravity on surface, flow into the lower end smoothly along Seed Layer and fill up whole contact hole, it has reduced process complexity, the consuming cost of employed hot aluminium connector processing procedure only is 80% of the employed tungsten plug processing procedure of prior art, use hot aluminium connector processing procedure to obtain better resistance characteristic simultaneously than use tungsten plug processing procedure, adopt hot aluminium connector to make and have only a contact resistance between aluminum metal layer on it and the silicon substrate, totally reduced the conducting resistance of whole power device, make the device reaction sensitive more, power consumption is more efficient, and the production cycle of product shortens simultaneously, is more conducive to dominate the market.
Description of drawings
Fig. 1～Figure 4 shows that prior art contact hole plug manufacture method structural representation.
Fig. 5～Figure 11 shows that aluminium connector manufacture method structure schematic diagram of preferred embodiment of the present invention.
Embodiment
In order more to understand technology contents of the present invention, especially exemplified by specific embodiment and cooperate institute's accompanying drawing to be described as follows.
The present invention proposes a kind of aluminium connector manufacture method of power device, comprises the following steps:
Semi-conductive substrate is provided;
Depositing insulating layer on described Semiconductor substrate;
Deposit passivation layer on described insulating barrier;
Respectively passivation layer, insulating barrier and Semiconductor substrate are carried out etching and form cup type contact hole;
In described cup type contact hole, reach on the passivation layer surface and deposit diffusion impervious layer;
In contact hole, fill metallic aluminium with formation aluminium connector,
The top width of wherein said cup type contact hole is greater than bottom width.
Wherein said cup type contact hole is its bottom near a side of Semiconductor substrate, and opposite side is the top.
Please refer to Fig. 5～Figure 11, Fig. 5～Figure 11 shows that aluminium connector manufacture method structure schematic diagram of preferred embodiment of the present invention.At first please refer to Fig. 5, preferred embodiment of the present invention provides semi-conductive substrate 100, it can be the polysilicon substrate, can form a plurality of power devices in the Semiconductor substrate 100, then depositing insulating layer 110 and passivation layer 120 successively thereon, wherein the material of insulating barrier 110 can be silicon dioxide, the thickness of insulating barrier 110 is 1900 dusts～2100 dusts, the material of passivation layer 120 is a boron-phosphorosilicate glass, the thickness of passivation layer 120 is 4500 dusts～5500 dusts, owing to have boron and phosphonium ion in the boron-phosphorosilicate glass material of passivation layer 120, can be diffused in the Semiconductor substrate 100, therefore use insulating barrier 110 as isolating.
Please refer to Fig. 6～Fig. 8 again, a step of passivation layer 120, insulating barrier 110 and Semiconductor substrate 100 being carried out etching formation cup type contact hole 130 comprises:
Then, insulating barrier 110 is carried out the top depth H1 that wet etching defines cup type contact hole 130, the top depth H1 of described cup type contact hole 130 is 7000 dusts～9000 dusts, and the top of described cup type contact hole 130 is positioned at passivation layer 120 and insulating barrier 110.It is different with the etch-rate of the wet etching of the insulating barrier 110 with silicon dioxide that utilization has the passivation layer 120 of boron-phosphorosilicate glass, forms curved profile in cup type contact hole 130;
The Semiconductor substrate 100 that are not insulated in layer cup type contact hole that covers 130 are carried out the photoetching etching, the bottom depth H 2 of definition cup type contact hole 130, the bottom depth H 2 of described cup type contact hole 130 is 3000 dusts～3600 dusts, and the bottom of described cup type contact hole 130 is positioned at Semiconductor substrate 100.
Wherein, form cup type contact hole 130 backs described body structure surface is carried out wet etch process, to remove defective and to make its surfacing, the characteristic size of glass type contact hole 130 of expansion simultaneously, and realize seamlessly transitting of cup type contact hole 130 inner curve profiles, thereby whole cup type contact hole 130 tops and bottom have been connected.(referring to Fig. 8)
Please refer to Fig. 9 again, deposition diffusion impervious layer 140 in described cup type contact hole 130 and on passivation layer 120 surfaces, described diffusion impervious layer 140 comprises the three-decker of bottom titanium coating, titanium nitride layer and top titanium coating.Wherein, the thickness of described bottom titanium coating, titanium nitride layer and top titanium coating is followed successively by 250 dusts～350 dusts, 150 dusts～250 dusts and 150 dusts～250 dusts.This diffusion impervious layer 140 is the diffusions that interpenetrate that are used for stoping the aluminium ion of metal level of subsequent deposition and the silicon ion in the said structure.
Please refer to Figure 10～Figure 11 again, the step of chemical vapour deposition (CVD) metallic aluminium formation aluminium connector comprises on the described diffusion impervious layer 140 in contact hole 130:
Chemical vapour deposition (CVD) cold metal aluminium 150 on the diffusion impervious layer 140 in contact hole 130;
Chemical vapour deposition (CVD) thermometal aluminium 160 on cold metal aluminium 150.
Wherein, the temperature of described cold metal aluminium 150 is 40 degrees centigrade～80 degrees centigrade, the thickness of described cold metal aluminium 150 is 1000 dusts～1500 dusts, and the temperature of described thermometal aluminium 160 is greater than 400 degrees centigrade, and the thickness of described thermometal aluminium 160 is 8000 dusts～10000 dusts.
Aluminum metal injection contact hole 130 is convenient in the open top of cup type contact hole 130 more greatly, though the bottom opening size of cup type contact hole 130 is less, but adopted cold aluminum metal 150 as Seed Layer, make follow-up thermometal aluminium 160 to flow into the lower end by the tension force and the gravity on surface, and flow into the lower end smoothly along Seed Layer and fill up, form contact hole.
In sum, the present invention proposes a kind of aluminium connector manufacture method of power device, the consuming cost of its employed hot aluminium connector processing procedure only is 80% of the employed tungsten plug processing procedure of prior art, use hot aluminium connector processing procedure to obtain better resistance characteristic simultaneously than use tungsten plug processing procedure, adopt hot aluminium connector to make and have only a contact resistance between aluminum metal layer on it and the silicon substrate, and because the resistivity of aluminium itself is just less than the resistivity of tungsten, thereby reduced the conducting resistance of whole power device on the whole, make the device reaction sensitive more, power consumption is more efficient, the production cycle of product shortens simultaneously, is more conducive to dominate the market.
Though the present invention discloses as above with preferred embodiment, so it is not in order to limit the present invention.The persond having ordinary knowledge in the technical field of the present invention, without departing from the spirit and scope of the present invention, when being used for a variety of modifications and variations.Therefore, protection scope of the present invention is as the criterion when looking claims person of defining.
Claims (18)
1. the aluminium connector manufacture method of a power device comprises the following steps:
Semi-conductive substrate is provided;
Depositing insulating layer on described Semiconductor substrate;
Deposit passivation layer on described insulating barrier;
Respectively passivation layer, insulating barrier and Semiconductor substrate are carried out etching and form cup type contact hole;
In described cup type contact hole, reach on the passivation layer surface and deposit diffusion impervious layer;
In contact hole, fill metallic aluminium with formation aluminium connector,
The top width of wherein said cup type contact hole is greater than bottom width.
2. aluminium connector manufacture method according to claim 1 is characterized in that the material of described insulating barrier is a silicon dioxide.
3. aluminium connector manufacture method according to claim 1 is characterized in that, the thickness of described insulating barrier is 1900 dusts～2100 dusts.
4. aluminium connector manufacture method according to claim 1 is characterized in that the material of described passivation layer is a boron-phosphorosilicate glass.
5. aluminium connector manufacture method according to claim 1 is characterized in that, the thickness of described passivation layer is 4500 dusts～5500 dusts.
6. aluminium connector manufacture method according to claim 1 is characterized in that, describedly passivation layer, insulating barrier and Semiconductor substrate are carried out the step that etching forms cup type contact hole comprises:
Passivation layer is carried out dry etching,, form opening wide at the top and narrow at the bottom up to exposing insulating barrier, thus the top width of definition cup type contact hole;
The surface of insulating layer that exposes is carried out wet etching, the top depth of definition cup type contact hole;
Continuation is carried out dry etching up to exposing Semiconductor substrate to insulating barrier, and the bottom width of definition cup type contact hole;
The Semiconductor substrate that exposes is carried out etching, thus the bottom degree of depth of definition cup type contact hole.
7. aluminium connector manufacture method according to claim 6 is characterized in that, the top width of described cup type contact hole is 4500 dusts～5500 dusts.
8. aluminium connector manufacture method according to claim 6 is characterized in that, the top depth of described cup type contact hole is 7000 dusts～9000 dusts.
9. aluminium connector manufacture method according to claim 6 is characterized in that, the bottom width of described cup type contact hole is 3400 dusts～3600 dusts.
10. aluminium connector manufacture method according to claim 6 is characterized in that, the bottom degree of depth of described cup type contact hole is 3000 dusts～3600 dusts.
11. aluminium connector manufacture method according to claim 6 is characterized in that, behind the formation cup type contact hole described structure is carried out wet etch process, to remove defective and to make its surfacing.
12. aluminium connector manufacture method according to claim 1 is characterized in that, described diffusion impervious layer comprises bottom titanium coating, titanium nitride layer and top titanium coating.
13. aluminium connector manufacture method according to claim 12 is characterized in that, the thickness of described bottom titanium coating, titanium nitride layer and top titanium coating is followed successively by 250 dusts～350 dusts, 150 dusts～250 dusts and 150 dusts～250 dusts.
14. aluminium connector manufacture method according to claim 1 is characterized in that, the step of chemical vapour deposition (CVD) metallic aluminium formation aluminium connector comprises on the described diffusion impervious layer in contact hole:
Chemical vapour deposition (CVD) cold metal aluminium on the diffusion impervious layer in contact hole;
Chemical vapour deposition (CVD) thermometal aluminium on cold metal aluminium.
15. aluminium connector manufacture method according to claim 14 is characterized in that, the temperature of described cold metal aluminium is 40 degrees centigrade～80 degrees centigrade.
16. aluminium connector manufacture method according to claim 14 is characterized in that, the thickness of described cold metal aluminium is 1000 dusts～1500 dusts.
17. aluminium connector manufacture method according to claim 14 is characterized in that the temperature of described thermometal aluminium is greater than 400 degrees centigrade.
18. aluminium connector manufacture method according to claim 14 is characterized in that, the thickness of described thermometal aluminium is 8000 dusts～10000 dusts.
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| CN200910195581.8A CN102024747B (en) | 2009-09-11 | 2009-09-11 | Method for manufacturing aluminium plug of power device |
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102354684A (en) * | 2011-11-14 | 2012-02-15 | 杭州士兰集成电路有限公司 | Wiring structure forming method |
| CN103545199A (en) * | 2012-07-16 | 2014-01-29 | 上海华虹Nec电子有限公司 | Method used for thick metal etching of power device |
| CN105499392A (en) * | 2016-01-07 | 2016-04-20 | 舟山市7412工厂 | Die for manufacturing bowl-shaped piston |
| CN105499429A (en) * | 2016-01-07 | 2016-04-20 | 舟山市7412工厂 | Bowl-shaped plug manufacturing method |
| CN111128869A (en) * | 2019-12-26 | 2020-05-08 | 华虹半导体(无锡)有限公司 | Preparation method for optimizing hot aluminum pore-filling capacity |
| CN115433919A (en) * | 2022-09-29 | 2022-12-06 | 长鑫存储技术有限公司 | Preparation method of semiconductor structure and semiconductor structure |
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| TW445573B (en) * | 1999-06-01 | 2001-07-11 | Winbond Electronics Corp | Methods to modify wet by dry etched via profile |
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Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102354684A (en) * | 2011-11-14 | 2012-02-15 | 杭州士兰集成电路有限公司 | Wiring structure forming method |
| CN103545199A (en) * | 2012-07-16 | 2014-01-29 | 上海华虹Nec电子有限公司 | Method used for thick metal etching of power device |
| CN105499392A (en) * | 2016-01-07 | 2016-04-20 | 舟山市7412工厂 | Die for manufacturing bowl-shaped piston |
| CN105499429A (en) * | 2016-01-07 | 2016-04-20 | 舟山市7412工厂 | Bowl-shaped plug manufacturing method |
| CN111128869A (en) * | 2019-12-26 | 2020-05-08 | 华虹半导体(无锡)有限公司 | Preparation method for optimizing hot aluminum pore-filling capacity |
| CN115433919A (en) * | 2022-09-29 | 2022-12-06 | 长鑫存储技术有限公司 | Preparation method of semiconductor structure and semiconductor structure |
| CN115433919B (en) * | 2022-09-29 | 2024-01-12 | 长鑫存储技术有限公司 | Method for preparing semiconductor structure and semiconductor structure |
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