CN103219321A - Composite copper diffusion blocking layer and preparation method thereof - Google Patents
Composite copper diffusion blocking layer and preparation method thereof Download PDFInfo
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- CN103219321A CN103219321A CN 201310122197 CN201310122197A CN103219321A CN 103219321 A CN103219321 A CN 103219321A CN 201310122197 CN201310122197 CN 201310122197 CN 201310122197 A CN201310122197 A CN 201310122197A CN 103219321 A CN103219321 A CN 103219321A
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Abstract
The invention discloses a composite copper diffusion blocking layer, which consists of a silicon nitride film and a metal diffusion barrier layer, and can effectively block the diffusion of copper in an isolating layer or device, an effective copper diffusion blocking effect is achieved, and copper filling is realized. Compared with tungsten, the copper is small in electrical resistivity, the problem of copper diffusion is solved, and the tungsten is replaced by the copper to improve the performance of the device and reduce power consumption. The invention also discloses a preparation method of the composite copper diffusion blocking layer. The method is characterized in that a contact hole is opened firstly and is cleaned, then amorphous silicon nitride is deposited, silicon nitride at the bottom of the contact hole is removed through etching, and finally the metal diffusion blocking layer is deposited. According to the method, the composite copper diffusion blocking layer can be obtained easily and conveniently, the tungsten can be replaced by the copper, and the performance and the reliability of the device are improved.
Description
Technical field
The present invention relates to technical field of manufacturing semiconductors, relate in particular to a kind of complex copper diffusion impervious layer and preparation method thereof.
Background technology
Copper interconnection technology refers to adopt in the making of semiconductor integrated circuit interconnection layer the copper metal material to replace the novel semi-conductor manufacturing process technology of conventional aluminum interconnect materials.Traditional copper interconnection structure as shown in Figure 1, be included in the low dielectric coefficient medium layer 11 that forms at semiconductor-based the end 10, in low dielectric coefficient medium layer 11, be formed with through-hole interconnection, the diapire and the sidewall that cover described through-hole interconnection are formed with anti-copper diffusion barrier layer 12, in described through-hole interconnection, be formed with copper interconnecting line 13 on the described anti-copper diffusion barrier 12, on copper interconnecting line 13, also be formed with silicon nitride film as etching barrier layer and with the insulation of one deck copper interconnecting line.As mentioned above, in integrated circuit, adopt copper interconnection structure, must use diffusion impervious layer to strengthen thermal stability and raising adhesion, in case the leak-stopping electricity waits the generation of some row problems.
Along with constantly dwindling of dimensions of semiconductor devices; the effect of diffusion barrier material play more and more key; therefore in modern copper-connection integrated circuit, the effect that the selection of diffusion barrier material and the micro-structural of diffusion impervious layer are avoided aspect the copper murder by poisoning at the protection device work is more and more important.But after connection the copper-connection in road with integrated to the contact hole technology of preceding road device in, the problem of copper diffusion still can not solve effectively.Because to problem and worry that its Performance And Reliability that causes reduces, copper still can not be widely used in the filling of contact hole.
Therefore, be necessary to provide a kind of new diffusion impervious layer, be beneficial to the popularization of copper-connection.
Summary of the invention
Main purpose of the present invention provides a kind of complex copper diffusion impervious layer and preparation method thereof, more effectively to stop the diffusion of copper in separator or device, improves the Performance And Reliability of device.
For achieving the above object, the invention provides a kind of complex copper diffusion impervious layer, be used for the integrated application of copper of contact hole, this complex copper diffusion impervious layer comprises:
Silicon nitride film is positioned on the sidewall of contact hole;
Metal diffusion barrier layer is positioned on the described silicon nitride film and the bottom of contact hole.
Optionally, be doped with nitrogen or hydrogen in the described silicon nitride film.
Optionally, described silicon nitride film deposits by the mode of CVD or ALD.
Optionally, the thickness of described silicon nitride film is 0.5nm～100nm.
Optionally, described metal diffusion barrier layer is by tantalum, titanium, tungsten, and the laminated film formed of one or more the material in nitride, silicide or the silicon nitride.
Optionally, described metal diffusion barrier layer is deposited by the mode of PVD or MOCVD or ALD.
Optionally, the thickness of described metal diffusion barrier layer is 0.5nm～100nm.
Simultaneously, for achieving the above object, the present invention also provides a kind of preparation method of complex copper diffusion impervious layer, is used for the integrated application of copper of contact hole, comprises the steps:
Open contact hole by etching, and the impurity of process wet method removing wafer and residual, source-drain electrode exposed;
At the surface of wafer and side wall deposition one deck silicon nitride film of contact hole;
Remove the silicon nitride film of contact hole bottom by etching or ion physical bombardment;
Deposition layer of metal diffusion impervious layer, described metal diffusion barrier layer covers the bottom of described silicon nitride film and contact hole.
Optionally, this method also comprises the steps: after the plated metal diffusion impervious layer
Deposition one deck PVD/ALD copper seed layer and ECP copper are filled;
Remove surface unnecessary copper and diffusion impervious layer by CMP, finish the integrated of copper contact.
Optionally, the thickness of described copper seed layer is 0.5nm～100nm, and the thickness that ECP copper is filled is 200nm～2000nm.
Optionally, be doped with nitrogen or hydrogen in the described silicon nitride film film.
Optionally, described silicon nitride film deposits by the mode with CVD or ALD and obtains.
Optionally, the thickness of described silicon nitride film is 0.5nm～100nm.
Optionally, the described silicon nitride film that removes contact hole bottom can be carved or argon ion bombardment carry out by doing.
Optionally, described metal diffusion barrier layer is by tantalum, titanium, tungsten, and the laminated film formed of one or more the material in nitride, silicide or the silicon nitride.
Optionally, described metal diffusion barrier layer is deposited by the mode of PVD or MOCVD or ALD.
Optionally, the thickness of described metal diffusion barrier layer is 0.5nm～100nm.
Compared with prior art, complex copper diffusion impervious layer provided by the invention is made of jointly silicon nitride film and metal diffusion barrier layer.This composite barrier of being made up of jointly silicon nitride and metal diffusion barrier layer can stop the diffusion of copper in separator or device effectively, reaches the blocking effect of effective copper diffusion, makes copper fill and is achieved.Compare with tungsten, the resistivity of copper is little, solves the diffusion problem of copper, allows copper replace tungsten and helps improving device performance and reduce power consumption.
Description of drawings
Fig. 1 is the sectional view of the copper interconnection structure of conventional art;
Fig. 2 is the sectional view of complex copper diffusion impervious layer provided by the invention;
Fig. 3 A to Fig. 3 F is the device schematic cross-section of each step correspondence of preparation method of complex copper diffusion impervious layer provided by the invention.
Embodiment
In order to make purpose of the present invention, technical scheme and advantage clearer,, the present invention is further elaborated below in conjunction with drawings and Examples.Should be appreciated that specific embodiment described herein only is used to explain the present invention, and be not used in qualification the present invention.
Core concept of the present invention is, a kind of complex copper diffusion impervious layer is provided, and is made up of jointly silicon nitride film and metal diffusion barrier layer.This composite barrier of being made up of jointly silicon nitride and metal diffusion barrier layer can stop the diffusion of copper in separator or device effectively, reaches the blocking effect of effective copper diffusion, makes copper fill and is achieved.Compare with tungsten, the resistivity of copper is little, solves the diffusion problem of copper, allows copper replace tungsten and helps improving device performance and reduce power consumption.The invention also discloses a kind of preparation method of complex copper diffusion impervious layer simultaneously, this method is at first opened contact hole and it is cleaned, carry out the deposition of amorphous silicon nitride afterwards, then remove the silicon nitride of contact hole bottom, carry out the deposition of metal diffusion barrier layer at last again by etching.This method can obtain the complex copper diffusion impervious layer simply and easily, and making copper replace tungsten becomes possibility, helps improving the Performance And Reliability of device.
Please refer to Fig. 2, Fig. 2 is the sectional view of complex copper diffusion impervious layer provided by the invention, as shown in Figure 2, the integrated application of copper that complex copper diffusion impervious layer provided by the invention is used for contact hole, this complex copper diffusion impervious layer comprises:
Metal diffusion barrier layer 105 is positioned on the described silicon nitride film 104 and the bottom of contact hole.
Wherein, silicon nitride film 104 amorphous silicon nitride films, and wherein can be doped with nitrogen or hydrogen.In one embodiment of the invention, this silicon nitride film 104 can deposit by the mode of CVD or ALD, and its thickness is 0.5nm～100nm.
Wherein, metal diffusion barrier layer 105 is by tantalum, titanium, tungsten, and the laminated film formed of one or more the material in nitride, silicide or the silicon nitride.In one embodiment of the invention, this metal diffusion barrier layer 105 is deposited by the mode of PVD or MOCVD or ALD, and its thickness is 0.5nm～100nm.
Please continue F with reference to figure 3A to Fig. 3, Fig. 3 A to Fig. 3 F is the device schematic cross-section of each step correspondence of preparation method of complex copper diffusion impervious layer provided by the invention, in conjunction with Fig. 3 A to Fig. 3 F, the preparation method of complex copper diffusion impervious layer provided by the invention, be used for the integrated application of copper of contact hole, comprise the steps:
Step 1: open contact hole 110 by etching, and the impurity of process wet method removing wafer and residual, expose source-drain electrode 102; Wherein, contact hole 110 specifically is to form by the separator 103 that etching is positioned on the Semiconductor substrate 101; The sectional view of the device after this step is finished as shown in Figure 3A.
Step 2: at the surface of wafer and side wall deposition one deck silicon nitride film 104 of contact hole, shown in Fig. 3 B.
Wherein, can be doped with nitrogen or hydrogen in this silicon nitride film film 104.Particularly, this silicon nitride film 104 can deposit by the mode with CVD or ALD and obtain, and its thickness is 0.5nm～100nm.
Step 3: remove the silicon nitride film 104 of contact hole bottom by etching or ion physical bombardment, the sectional view of the device after this step is finished is shown in Fig. 3 C.
Wherein, removing particularly of the silicon nitride film 104 of contact hole bottom can be undertaken by doing quarter or argon ion bombardment.
Step 4: deposition layer of metal diffusion impervious layer 105, described metal diffusion barrier layer 105 covers the bottom of described silicon nitride film 104 and contact hole, shown in Fig. 3 D.
Wherein, the material of described metal diffusion barrier layer 105 is made of transition metal, comprises metal and their nitride, silicide or silicon nitrides such as tantalum, titanium, tungsten.Metal diffusion barrier layer 105 can be by laminated film a kind of or that be made up of more than one materials wherein.In one embodiment of the invention, described metal diffusion barrier layer 105 can be deposited by the mode of PVD or MOCVD or ALD, and its thickness is 0.5nm～100nm.
So far, the preparation of complex copper diffusion impervious layer is finished.But finish the integrated of copper contact and also need proceed following steps:
Step 5: deposition one deck PVD/ALD copper seed layer and ECP copper fill 106, shown in Fig. 3 E.
Wherein, the thickness of described copper seed layer is 0.5nm～100nm, and the thickness that ECP copper is filled is 200nm～2000nm.
Step 6: remove surface unnecessary copper and diffusion impervious layer by CMP, finish the integrated of copper contact; Device sectional view after this step is finished is shown in Fig. 3 F.
Be described as follows about effect of the present invention:
Resistivity with respect to tungsten is 5.65 ohm meters, and the resistivity of copper is much lower, is specially 1.75 ohm meters.Copper replaces tungsten, thereby has effectively reduced the resistance of whole contact hole.Silicon nitride film itself is good copper diffusion barrier layer, and the silicon nitride of CVD deposition has good step coverage energy and surface, the metal barrier deposition of the physical vapour deposition (PVD) of favourable back.This composite barrier can more effectively stop the diffusion of copper in separator or device, improves the Performance And Reliability of device.
In sum, the invention provides a kind of complex copper diffusion impervious layer, form jointly by silicon nitride film and metal diffusion barrier layer.This composite barrier of being made up of jointly silicon nitride and metal diffusion barrier layer can stop the diffusion of copper in separator or device effectively, reaches the blocking effect of effective copper diffusion, makes copper fill and is achieved.Compare with tungsten, the resistivity of copper is little, solves the diffusion problem of copper, allows copper replace tungsten and helps improving device performance and reduce power consumption.The invention also discloses a kind of preparation method of complex copper diffusion impervious layer simultaneously, this method is at first opened contact hole and it is cleaned, carry out the deposition of amorphous silicon nitride afterwards, then remove the silicon nitride of contact hole bottom, carry out the deposition of metal diffusion barrier layer at last again by etching.This method can obtain the complex copper diffusion impervious layer simply and easily, and making copper replace tungsten becomes possibility, helps improving the Performance And Reliability of device.
Obviously, those skilled in the art can carry out various changes and modification to invention and not break away from the spirit and scope of the present invention.Like this, if of the present invention these are revised and modification belongs within the scope of claim of the present invention and equivalent technologies thereof, then the present invention also is intended to comprise these changes and modification interior.
Claims (17)
1. a complex copper diffusion impervious layer is used for the integrated application of copper of contact hole, it is characterized in that this complex copper diffusion impervious layer comprises:
Silicon nitride film is positioned on the sidewall of contact hole;
Metal diffusion barrier layer is positioned on the described silicon nitride film and the bottom of contact hole.
2. complex copper diffusion impervious layer as claimed in claim 1 is characterized in that, is doped with nitrogen or hydrogen in the described silicon nitride film.
3. complex copper diffusion impervious layer as claimed in claim 1 or 2 is characterized in that described silicon nitride film deposits by the mode of CVD or ALD.
4. complex copper diffusion impervious layer as claimed in claim 3 is characterized in that, the thickness of described silicon nitride film is 0.5nm～100nm.
5. complex copper diffusion impervious layer as claimed in claim 1 is characterized in that, described metal diffusion barrier layer is by tantalum, titanium, tungsten, and the laminated film formed of one or more the material in nitride, silicide or the silicon nitride.
6. complex copper diffusion impervious layer as claimed in claim 5 is characterized in that, described metal diffusion barrier layer is deposited by the mode of PVD or MOCVD or ALD.
7. complex copper diffusion impervious layer as claimed in claim 6 is characterized in that, the thickness of described metal diffusion barrier layer is 0.5nm～100nm.
8. the preparation method of a complex copper diffusion impervious layer is used for the integrated application of copper of contact hole, it is characterized in that, comprises the steps:
Open contact hole by etching, and the impurity of process wet method removing wafer and residual, source-drain electrode exposed;
At the surface of wafer and side wall deposition one deck silicon nitride film of contact hole;
Remove the silicon nitride film of contact hole bottom by etching or ion physical bombardment;
Deposition layer of metal diffusion impervious layer, described metal diffusion barrier layer covers the bottom of described silicon nitride film and contact hole.
9. the preparation method of complex copper diffusion impervious layer as claimed in claim 8 is characterized in that, this method also comprises the steps: after the plated metal diffusion impervious layer
Deposition one deck PVD/ALD copper seed layer and ECP copper are filled;
Remove surface unnecessary copper and diffusion impervious layer by CMP, finish the integrated of copper contact.
10. the preparation method of complex copper diffusion impervious layer as claimed in claim 9 is characterized in that, the thickness of described copper seed layer is 0.5nm～100nm, and the thickness that ECP copper is filled is 200nm～2000nm.
11. the preparation method of complex copper diffusion impervious layer as claimed in claim 8 is characterized in that, is doped with nitrogen or hydrogen in the described silicon nitride film film.
12. the preparation method of complex copper diffusion impervious layer as claimed in claim 8 is characterized in that, described silicon nitride film deposits by the mode with CVD or ALD and obtains.
13. the preparation method of complex copper diffusion impervious layer as claimed in claim 12 is characterized in that, the thickness of described silicon nitride film is 0.5nm～100nm.
14. the preparation method of complex copper diffusion impervious layer as claimed in claim 8 is characterized in that, the described silicon nitride film that removes the contact hole bottom can be undertaken by doing quarter or argon ion bombardment.
15. the preparation method of complex copper diffusion impervious layer as claimed in claim 8 is characterized in that, described metal diffusion barrier layer is by tantalum, titanium, tungsten, and the laminated film formed of one or more the material in nitride, silicide or the silicon nitride.
16. the preparation method of complex copper diffusion impervious layer as claimed in claim 15 is characterized in that, described metal diffusion barrier layer is deposited by the mode of PVD or MOCVD or ALD.
17. the preparation method of complex copper diffusion impervious layer as claimed in claim 16 is characterized in that, the thickness of described metal diffusion barrier layer is 0.5nm～100nm.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105280613A (en) * | 2014-07-16 | 2016-01-27 | 台湾积体电路制造股份有限公司 | Copper interconnect structure and method for forming the same |
| CN110957264A (en) * | 2018-09-26 | 2020-04-03 | 长鑫存储技术有限公司 | Preparation method of copper diffusion barrier layer |
-
2013
- 2013-04-09 CN CN 201310122197 patent/CN103219321A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105280613A (en) * | 2014-07-16 | 2016-01-27 | 台湾积体电路制造股份有限公司 | Copper interconnect structure and method for forming the same |
| CN105280613B (en) * | 2014-07-16 | 2018-05-04 | 台湾积体电路制造股份有限公司 | Copper interconnection structure and forming method thereof |
| CN110957264A (en) * | 2018-09-26 | 2020-04-03 | 长鑫存储技术有限公司 | Preparation method of copper diffusion barrier layer |
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Application publication date: 20130724 |