CN103545199A - Method used for thick metal etching of power device - Google Patents
Method used for thick metal etching of power device Download PDFInfo
- Publication number
- CN103545199A CN103545199A CN201210246239.8A CN201210246239A CN103545199A CN 103545199 A CN103545199 A CN 103545199A CN 201210246239 A CN201210246239 A CN 201210246239A CN 103545199 A CN103545199 A CN 103545199A
- Authority
- CN
- China
- Prior art keywords
- thick metal
- etching
- metal layers
- described step
- power device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000002184 metal Substances 0.000 title claims abstract description 60
- 238000000034 method Methods 0.000 title claims abstract description 38
- 238000005530 etching Methods 0.000 title abstract description 25
- 238000001039 wet etching Methods 0.000 claims abstract description 22
- 238000001312 dry etching Methods 0.000 claims abstract description 14
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 11
- 239000011248 coating agent Substances 0.000 claims abstract description 6
- 238000000576 coating method Methods 0.000 claims abstract description 6
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 claims description 21
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 claims description 12
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 8
- 239000007788 liquid Substances 0.000 claims description 8
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims description 7
- 229910017604 nitric acid Inorganic materials 0.000 claims description 7
- 229910000147 aluminium phosphate Inorganic materials 0.000 claims description 6
- 238000005229 chemical vapour deposition Methods 0.000 claims description 6
- 229910016570 AlCu Inorganic materials 0.000 claims description 5
- 239000007769 metal material Substances 0.000 claims description 5
- 238000005240 physical vapour deposition Methods 0.000 claims description 5
- 239000000126 substance Substances 0.000 claims description 5
- 230000005669 field effect Effects 0.000 claims description 4
- 235000012239 silicon dioxide Nutrition 0.000 claims description 4
- 239000000377 silicon dioxide Substances 0.000 claims description 4
- GDFCWFBWQUEQIJ-UHFFFAOYSA-N [B].[P] Chemical compound [B].[P] GDFCWFBWQUEQIJ-UHFFFAOYSA-N 0.000 claims description 3
- 239000005368 silicate glass Substances 0.000 claims description 3
- 238000000151 deposition Methods 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 20
- 239000003292 glue Substances 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 2
- 230000009931 harmful effect Effects 0.000 description 2
- 239000011229 interlayer Substances 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32139—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer using masks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- ing And Chemical Polishing (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
Description
Claims (9)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201210246239.8A CN103545199A (en) | 2012-07-16 | 2012-07-16 | Method used for thick metal etching of power device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201210246239.8A CN103545199A (en) | 2012-07-16 | 2012-07-16 | Method used for thick metal etching of power device |
Publications (1)
Publication Number | Publication Date |
---|---|
CN103545199A true CN103545199A (en) | 2014-01-29 |
Family
ID=49968550
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201210246239.8A Pending CN103545199A (en) | 2012-07-16 | 2012-07-16 | Method used for thick metal etching of power device |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN103545199A (en) |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4775550A (en) * | 1986-06-03 | 1988-10-04 | Intel Corporation | Surface planarization method for VLSI technology |
US6293457B1 (en) * | 2000-06-08 | 2001-09-25 | International Business Machines Corporation | Integrated method for etching of BLM titanium-tungsten alloys for CMOS devices with copper metallization |
CN101667556A (en) * | 2009-09-09 | 2010-03-10 | 上海宏力半导体制造有限公司 | Through hole etching method |
CN102024747A (en) * | 2009-09-11 | 2011-04-20 | 中芯国际集成电路制造(上海)有限公司 | Method for manufacturing aluminium plug of power device |
CN102169862A (en) * | 2011-03-02 | 2011-08-31 | 杭州士兰集成电路有限公司 | Fairlead structure for Bipolar circuit and manufacturing method thereof |
CN102354684A (en) * | 2011-11-14 | 2012-02-15 | 杭州士兰集成电路有限公司 | Wiring structure forming method |
CN103560113A (en) * | 2013-11-15 | 2014-02-05 | 北京京东方光电科技有限公司 | Array structure and manufacturing method thereof, array substrate and display device |
-
2012
- 2012-07-16 CN CN201210246239.8A patent/CN103545199A/en active Pending
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4775550A (en) * | 1986-06-03 | 1988-10-04 | Intel Corporation | Surface planarization method for VLSI technology |
US6293457B1 (en) * | 2000-06-08 | 2001-09-25 | International Business Machines Corporation | Integrated method for etching of BLM titanium-tungsten alloys for CMOS devices with copper metallization |
CN101667556A (en) * | 2009-09-09 | 2010-03-10 | 上海宏力半导体制造有限公司 | Through hole etching method |
CN102024747A (en) * | 2009-09-11 | 2011-04-20 | 中芯国际集成电路制造(上海)有限公司 | Method for manufacturing aluminium plug of power device |
CN102169862A (en) * | 2011-03-02 | 2011-08-31 | 杭州士兰集成电路有限公司 | Fairlead structure for Bipolar circuit and manufacturing method thereof |
CN102354684A (en) * | 2011-11-14 | 2012-02-15 | 杭州士兰集成电路有限公司 | Wiring structure forming method |
CN103560113A (en) * | 2013-11-15 | 2014-02-05 | 北京京东方光电科技有限公司 | Array structure and manufacturing method thereof, array substrate and display device |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
ASS | Succession or assignment of patent right |
Owner name: SHANGHAI HUAHONG GRACE SEMICONDUCTOR MANUFACTURING Free format text: FORMER OWNER: HUAHONG NEC ELECTRONICS CO LTD, SHANGHAI Effective date: 20140114 |
|
C41 | Transfer of patent application or patent right or utility model | ||
COR | Change of bibliographic data |
Free format text: CORRECT: ADDRESS; FROM: 201206 PUDONG NEW AREA, SHANGHAI TO: 201203 PUDONG NEW AREA, SHANGHAI |
|
TA01 | Transfer of patent application right |
Effective date of registration: 20140114 Address after: 201203 Shanghai city Zuchongzhi road Pudong New Area Zhangjiang hi tech Park No. 1399 Applicant after: Shanghai Huahong Grace Semiconductor Manufacturing Corporation Address before: 201206, Shanghai, Pudong New Area, Sichuan Road, No. 1188 Bridge Applicant before: Shanghai Huahong NEC Electronics Co., Ltd. |
|
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20140129 |