CN102017179A - 集成有微型联接装置的绝缘玻璃部件 - Google Patents
集成有微型联接装置的绝缘玻璃部件 Download PDFInfo
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- CN102017179A CN102017179A CN2009801150728A CN200980115072A CN102017179A CN 102017179 A CN102017179 A CN 102017179A CN 2009801150728 A CN2009801150728 A CN 2009801150728A CN 200980115072 A CN200980115072 A CN 200980115072A CN 102017179 A CN102017179 A CN 102017179A
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Images
Classifications
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/20—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials
- H01L31/202—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials including only elements of Group IV of the Periodic Table
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B17/00—Layered products essentially comprising sheet glass, or glass, slag, or like fibres
- B32B17/06—Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material
- B32B17/10—Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material of synthetic resin
- B32B17/10005—Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material of synthetic resin laminated safety glass or glazing
- B32B17/10009—Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material of synthetic resin laminated safety glass or glazing characterized by the number, the constitution or treatment of glass sheets
- B32B17/10036—Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material of synthetic resin laminated safety glass or glazing characterized by the number, the constitution or treatment of glass sheets comprising two outer glass sheets
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- B—PERFORMING OPERATIONS; TRANSPORTING
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- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B17/00—Layered products essentially comprising sheet glass, or glass, slag, or like fibres
- B32B17/06—Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material
- B32B17/10—Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material of synthetic resin
- B32B17/10005—Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material of synthetic resin laminated safety glass or glazing
- B32B17/1055—Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material of synthetic resin laminated safety glass or glazing characterized by the resin layer, i.e. interlayer
- B32B17/10788—Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material of synthetic resin laminated safety glass or glazing characterized by the resin layer, i.e. interlayer containing ethylene vinylacetate
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- B—PERFORMING OPERATIONS; TRANSPORTING
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- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B17/00—Layered products essentially comprising sheet glass, or glass, slag, or like fibres
- B32B17/06—Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material
- B32B17/10—Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material of synthetic resin
- B32B17/10005—Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material of synthetic resin laminated safety glass or glazing
- B32B17/10807—Making laminated safety glass or glazing; Apparatus therefor
- B32B17/10816—Making laminated safety glass or glazing; Apparatus therefor by pressing
- B32B17/10871—Making laminated safety glass or glazing; Apparatus therefor by pressing in combination with particular heat treatment
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- E—FIXED CONSTRUCTIONS
- E06—DOORS, WINDOWS, SHUTTERS, OR ROLLER BLINDS IN GENERAL; LADDERS
- E06B—FIXED OR MOVABLE CLOSURES FOR OPENINGS IN BUILDINGS, VEHICLES, FENCES OR LIKE ENCLOSURES IN GENERAL, e.g. DOORS, WINDOWS, BLINDS, GATES
- E06B3/00—Window sashes, door leaves, or like elements for closing wall or like openings; Layout of fixed or moving closures, e.g. windows in wall or like openings; Features of rigidly-mounted outer frames relating to the mounting of wing frames
- E06B3/66—Units comprising two or more parallel glass or like panes permanently secured together
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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Abstract
本发明提供了一种含有第一基板和第二基板的绝缘玻璃部件(IGU)。第一基板和第二基板相分隔并彼此基本平行。两块基板是密封的。两块基板之间有微型联接装置。该微型联接装置在两块基板边缘处且未延伸出它们的边缘。微型联接装置在一对导线和一对引线之间装有一个电耦合器。所述一对导线的第一末端和一对引线的第一末端连接在一起。所述一对导线的第二末端则延伸出了基底的边缘。所述一对引线的第二末端穿过第一基板。IGU还包括与第一基板耦合并与一对引线的第二末端电耦合的光伏模块。
Description
技术领域
本发明大体涉及了含光伏模块的绝缘玻璃部件。
背景技术
太阳能电池和其它光伏器件将可见光和其它太阳辐射转化为可使用的电能。这种能量转换的发生是由于光伏效应的结果。太阳辐射(日光)冲击在光伏器件上被半导体材料的活性区域如非晶硅本征的i层所吸收,在活性区域产生电子-空穴对。通过光伏器件中的结电场分离电子和空穴。由结所致的电子和空穴的分离导致了电流和电压的产生。电子朝半导体材料中具有n-型传导性的区域流动。空穴朝半导体材料中具有p-型传导性的区域流动。只要光在光伏器件中持续产生电子-空穴对,电流就会流经连接n型区域到p型区域的外部电路。
非晶单结装置由三层构成。它们是非本征或掺杂的p和n层,以及本征或无掺杂的i层(至少不含有意掺杂)。i层比掺杂层厚得多。这主要是由于在i层吸收的光被转换成可用于外部回路的电力。i层(有时称作吸收层)的厚度决定吸收多少光。当i层吸收一个光子,即产生一个单位的电流(一个电子-空穴对)。然而这种电流自身不能流动。因此,含有带电掺杂离子的p-层和n-层建立了穿过i层的强电场。正是这个电场使电荷流出i层并将其送入到能为电子元件供电的外部电路中。
薄膜太阳能电池通常由在基板上的含半导体膜组成,如非晶硅。太阳能电池的基板可由玻璃或金属制成,如铝,铌,钛,铬,铁,铋,锑,或钢。钠钙玻璃常用来做基板,因为它价廉,耐用而且透明。如果使用玻璃基板,则可在形成含半导体膜之前在玻璃基板上使用一种透明的导电涂层,如锡的氧化物。在太阳能电池背面可形成金属接触(metallic contact)。为了提供有吸引力的光伏模块,通常将太阳能电池置于金属框架内。
多年来,不计其数的太阳能电池经过发展取得了不同程度的成功。单结非晶硅太阳能电池很有效但通常达不到多结太阳能电池的功率和转换效率。多结太阳能电池可由多种材料构成,这些材料可以捕捉更宽部分的太阳光谱并将其转换为电能。多结太阳能电池用具有宽且低的能带隙的本征i层的非晶硅和它的合金制得,如氢化非晶硅碳和氢化非晶硅锗。在两个结上都有着相同能带隙材料的多结非晶硅太阳能电池通常有一个相对高的开路电压和低电流;它们通常捕捉太阳光谱中波长为400到900纳米(nm)的日光转换为电。
非晶硅太阳能电池包括氢化非晶硅(a-Si:H)材料的主体,这个材料可以在硅烷的辉光放电中形成。在电池的主体中存在电场,这种电场是由构成主体的不同掺杂类型的半导体区域所形成的。
非晶硅太阳能电池通常是由硅烷辉光放电而制成。辉光放电过程包括在部分真空容器中在相对较低压力和较高温度下通过一种气体进行能量释放。制造非晶硅太阳能电池的典型工艺包括在真空容器中将一块基板放置于一个加热过的元件之上,同时在低压下将硅烷放入真空容器中,这样在两个电极之间发生了辉光放电且非晶硅膜沉积于基板上。多结太阳能电池的节段,层板或电池之间是电连接的,如通过激光划片。
含有绝缘玻璃部件(insulating glass units,IGUs)的太阳能电池板已经被开发用于多种不同的建筑结构。IGUs含有能由日光产生电的光伏器件。
IGUs作为绿色建筑设计中的关键部分受到越来越高的重视,在全世界范围内建筑师对它的需求与日俱增。IGUs尤其适合应用在窗口,它赋予太阳能模块透明性的能力提供了广泛的建筑灵活性,因为它允许光线射入的同时可以产生太阳电能。然而传统IGUs经常连有如接线盒的连接器,其会干扰IGUs在建筑结构上的安装。传统IGUs经常有漏电问题从而不能提供适当的电绝缘。这将限制IGUs在绿色建筑结构上的应用。
发明内容
在一种实施方式中提供了一个带有绝缘玻璃部件(IGU)的太阳能电池板。在IGU边缘附近有一个外形小巧的连接器。在另一种实施方式中,提供了带有一组IGUs和一个外部框架的太阳能电池板。IGUs位于外部框架内。每个IGU包括第一基板和第二基板,微型联接装置,和光伏模块。第二基板和第一基板基本平行。两块基板相分隔并被密封。微型联接装置位于两个基板之间。这个微型联接装置在两块基板的边缘处且未延伸出两个基板的边缘。微型联接装置在一对导线的第一末端和一对引线(leads)的第一末端之间装有电耦合器(electrical coupling)。所述一对导线的第二末端延伸出了两块基板的边缘。所述一对引线的第二末端穿过第一基板。光伏模块与第一基板耦合。光伏模块还与所述一对引线的第二末端耦合。
以下参照附图更详细地描述本发明更多的实施方式,特性和优点以及本发明各种不同实施方式的结构和操作。
附图说明
参照附图描述本发明的实施方式。在附图中,类似的参照号可表示相同或功能相近的元件。附图里第一次出现的元件通常用最左方的数字以相应参考号予以表示。
图1A所示为根据本发明的一种实施方式的绝缘玻璃部件(IGU)的正视图。
图1B所示为根据本发明的一种实施方式的图1A中IGU的侧视图。
图1C所示为根据本发明的一种实施方式的含有两个IGUs的示例性太阳能电池板。
图2A所示为根据本发明的一种实施方式的在IGU中应用的光伏模块的示例性结构。
图2B所示为根据本发明的一种实施方式的在IGU中应用的带蚀刻的光伏模块的示例性结构。
图3A所示为根据本发明的一种实施方式的在光伏模块中应用的半导体的示例性结构。
图3B所示为根据本发明的一种实施方式的在光伏模块中应用的半导体的另一个示例性结构。
图4所示为根据本发明的一种实施方式的带两个p-n-i结电池的光伏模块的示例性结构。
图5所示为根据本发明的一种实施方式的可用于生产IGU的示例性步骤。
图6a至6f所示为可用于本发明的一种实施方式中的激光划片(laser scribing)步骤。
具体实施方式
参考图1A和1B,图示了根据本发明的一种实施方式的一个示例性绝缘玻璃部件(IGU)100的正视图和侧视图。可在一个太阳能电池板中使用一个或多个这样的IGUs。根据本发明的一个特点,IGU 100满足UL 1703规定的要求,其是平板光伏模块和面板的安全性标准。IGU 100也可提供适当的不漏电的电绝缘。拥有着一个外形小巧的微型联接装置,IGU 100是可用于绿色建筑结构的太阳能电池板的理想选择。在一些实施方式中,IGU 100中半导体上的蚀刻可以有各种美观又实用的特点。
在图1A中,IGU 100包括光伏(photovoltaic,PV)模块110,一对导线120,硅酮密封层130,和绝缘玻璃部件(IGU)间隔体140。图1B所示为IGU 100的一个侧视图。
参考图1B,IGU 100的一种实施方式,包括第一基板150,第二基板160,和微型联接装置180。第一基板150和第二基板160彼此平行。IGU间隔体140位于基板150和160之间以将他们分隔。间隔体140可包含干燥剂。
微型联接装置180位于第一基板150和第二基板160之间。微型联接装置180位于两块基板边缘处且未延伸出基板150和160边缘。微型联接装置180有一对导线120。导线120的一端与一对引线114的一个末端连接。置有密封层112使IGU 100对环境密封。密封层112包括具有空间186的孔隙以便引线114的末端从该孔隙中延伸出来。微型联接装置180通过硅酮密封层130密封在基板150和160之间并具有空间184、空间186和空间188的总宽度。
在一种实施方式中,密封层112可由聚合物和防潮层构成。适合用于密封层的聚合物的示例包括但不限于乙烯-醋酸乙烯酯(EVA),聚醋酸乙烯酯(PVA),PVB,TEDLAR型塑料,NUVA-SIL型塑料,TEFZEL型塑料,紫外固化涂层,以及它们的组合等。防潮层可由玻璃或多层结构例如塑料包围金属膜如铝等构成。
在一种实施方式中,微型联接装置180被设置成可以承受至少2倍IGU100电压另加1000伏特的电压。微型联接装置180外形小巧,比间隔体140的厚度更小。通过示例而非限制的方式,微型联接装置180厚度小于2.0英寸,1.5英寸,1.0英寸,0.5英寸等。微型联接装置180具有足够小的厚度,因此它不会干扰IGU 100的相关安装结构。微型联接装置180可包括一种灌封材料(potting materiral)。在一种实施方式中,微型联接装置180满足UL1703规定的要求。UL 1703是平板光伏模块和面板的标准。这个标准由Northbrook,IL的Underwriters Laboratories Inc.所制定。
图1C所示为根据本发明的一种实施方式的太阳能电池板102的示例性结构。太阳能电池板102包括外部框架191,其限定了太阳能电池板102的外缘。IGUs104和106位于外部框架191之内。每个IGU至少部分被内部框架192确定。每个IGU的至少一部分是带微型联接装置的光伏器件,如上所述,其位于绝缘玻璃部件的基板边缘附近而未延伸出边缘,微型联接装置包括与金属箔片耦合的导线引线。
如图1C所示,还提供了一个充电控制装置193。也提供了电力存储装置194,直流(DC)转交流(AC)换流器195,和电力输出口196。
IGU 100还包括面对入射光方向的PV模块110。图2A所示为根据本发明的一种实施方式的PV模块的示例性结构图,在图2A中PV模块110包括平板202,第一接触体(first contact)210,半导体220,和第二接触体230。半导体220与第一接触体210相邻。第二接触体230和半导体220相邻。在第一接触体210和第二接触体230之间形成一个连接件(interconnect)240。引线114与第二接触体230耦合。在一种实施方式中,引线114可以是金属箔片。
图2B所示为其中包括蚀刻250的半导体220的实施方式。参考图2B,PV模块110可包括平板202,第一接触体210,和第二接触体230。PV模块110也包括半导体220及在其中形成的蚀刻250。蚀刻250可通过去除部分半导体220形成。蚀刻250可有各种美观和实用的特点,包括但不限于增加模块透明度的蚀刻;可通过这样蚀刻的方式在模块中形成圆点,条纹,图案,字母,标识,壁画及其它的艺术设计;保持模块可用作光伏器件的能力的蚀刻;能改善模块的电性能的蚀刻等等。
半导体220可以是美国专利号4233085所公开的CdS,In1_xGaxN合金;美国专利号7217882所公开的In1_xGaxN合金(铟,镓,和氮);美国专利号4296188所公开的Cd(Se,Te)合金;美国专利号4633031所公开的硅51-88%锂3-30%氧化铝0.5-29%氟0.5-8%氢1-12%钒0-5%,美国专利号4633031所公开的硅51-88%锂3-30%氧化铝0.5-29%氟0.5-8%氢0.5-12%锑0.01-20%钴0.01-6%;美国专利号4609771所公开的硅-锗合金,美国专利号4713492所公开的硅合金材料,锗合金材料,硅-锗合金材料,碲化镉,硒化镉,砷化镓,和铜铟二硒(copper indium diselenide);美国专利号3638026所公开的铜铟镓二硒(CuInxGa1_xSe2或仅CIGS);碲化镉汞(Hg Cd/Te);美国专利号4529832所公开的PbxCd(1_x)S(铅镉硫化物)合金;美国专利号4568792所公开的Cd1_xZnxTe,CdTe.sub.l l Sy,CdTe1_ySy;美国专利号3978333所公开的硅,锗,磷化铟,砷化镓,锑化铝,磷化镓,锑化镓,硫化镉,硒化镉,碲化镉,氧化锌,硫化锌,硒化锌,硫化铜,氧化铜,二氧化钛,砷化铝,镓铝砷,等等。以上所提及专利的全部内容引入本文作为参考。
在很多实施方式中,半导体220是一种含非晶硅的材料。适用的半导体材料包括但不限于氢化非晶硅,氢化非晶硅碳,氢化非晶硅锗等。半导体220可以是单结,串结(tandem junction)或三结电池,分别为p1i1n1,p1i1n1和p2i2n2,以及p1i1n1,p2i2n2和p3i3n3电池。
在一种实施方式中,IGU 100包括一个单结太阳能电池,半导体220是p-i-n型或n-i-p型非晶硅半导体。图3A是一个示例性的单电池半导体。在图3A中,半导体包括一个单结太阳能电池302。电池302包括n-层310,i-层320,和p-层330。半导体220可以是氢化非晶硅,氢化非晶硅碳或氢化非晶硅锗。将非晶硅半导体的正极掺杂(p-掺杂)非晶硅P-层定位,排列,沉积,覆盖,放于前接触体上并由此与其相接。p层可以用乙硼烷(B2H6),BF3,三甲基硼(TMB)或其它含硼化合物进行正极掺杂。之上沉积有的未掺杂的活跃本征i层的非晶硅位于p-层和负极掺杂(n-掺杂)非晶硅的n-层之间并与其相连。n-层位于i层之上,可以是非晶硅碳或用磷化氢(PH3)或其它含磷化合物进行负极掺杂的非晶硅。
非晶硅可通过向硅烷中加入杂质而掺杂。通过示例而非限制的方式,第一掺杂剂是乙硼烷(B2H6),其被添加进硅烷中形成p-型非晶硅层。p-型非晶硅层形成之后,乙硼烷流动停止形成本征区域。此后,将n-型掺杂剂,如磷化氢(PH3)添加进硅烷流中以形成n-型非晶硅层。p-i分界面可以是在p-层边缘约含5%碳的非晶硅碳。
平板202(图2A和2B)可由不透明玻璃,半透明玻璃,透明玻璃等制成。第一接触体210可以是多层结构,包括透明金属氧化层,介电层和可选择的附加层。通常,第一接触层210的材料是掺杂的。
若第一接触体210是一个多层结构,介电的外部正面层(outer front layer)可以是二氧化硅,它被放置在平板202的内表面上并与其紧邻,而透明的金属导电氧化物背层(rear layer)提供了一个宽带隙正面半导体,它被放置在介电层上并与其紧密相邻。用于第一接触体210背层的材料示例包括但不限于氧化锡,铟锡氧化物,氧化锌,锡酸镉等。介电层可被常压化学气相沉积(APCVD),低压化学气相沉积(LPCVD)或其它方法沉积。
第二接触体230也可以是多层结构,包括金属,如铝,金属的银合金等。适合用于第二接触体230的材料包括但不限于选自氧化锡,氧化锌,铟锡氧化物,锡酸镉等的掺杂材料。在一种实施方式中,若第二接触体230是一个多层结构,内部正面层可以是金属导电氧化物,背层可以是金属,包括但不限于银,钼,铂,钢,铁,铌,钛,铬,铋,锑,铝等等的金属。内部正面层可以通过溅射,低压化学气相沉积(LPCVD),喷涂或其它方法沉积。外部金属层可以由溅射或其它方法沉积。
在另外一种实施方式中,如图3B所示,IGU 100含有一个串结电池半导体。在这个实施方式中,第一电池304和第二电池306分别有p1i1n1和p2i2n2层。第一电池304包括n-层312,i-层322,和p-层332。第二电池306包括n-层314,i-层324,和p-层334。电池厚度增加,从第一接触体210到第二接触体230。而在另一种实施方式中,IGU可以有三结电池,其包括带有p3i3n3的第三电池,且其厚度通常比第一和第二电池更厚。
在一种具体实施方式中,如图4所示,PV模块110包括以下组件,含SiO2的碱石灰浮法玻璃(soda lime float glass)板202,SnO2正面接触体220,和有以下p1i1n1/p2i2n2层的串结:a-SIC:B,a-Si,a-Si:P,a-SiC:B,a-Si和a-Si:P。ZnO沉积在半导体的最后一层上,之后沉积是第二接触体230的铝。
图5所示为根据本发明一种实施方式的生产IGU 100的示例性步骤500。现参考图5,在本发明的一种实施方式中,基板如平板202上已有第一接触体210。步骤510当中,在平板准备台上接收含第一接触体210的平板202,并对其进行清洗,去除微粒,碎片以确保良好的粘合性。在商用玻璃清洗系统中使用一种加热到40-70℃的肥皂水溶液(aqueous soap solution)清洗平板202和第一接触体210,并用去离子水冲洗。用激光对沉积了的SnO2层进行划片,接着进行清洗步骤以去除520步骤中激光制图产生的碎片。
然后将基板放在基板托架上并预热至140-220℃的温度范围。在步骤530中不同的半导体层从气体源材料中沉积,气体源材料包括硅烷,氢气,三甲基硼,甲烷和磷化氢。沉积发生在140-220℃温度范围内以形成氢化非晶硅串结电池p1i1n1/p2i2n2,其具有以下层:a-SIC:B,a-Si,a-Si:P,a-SiC:B,a-Si和a-Si:P。然后冷却含半导体层的基板,将其卸至运输车(transport cart)。然后,在步骤540中第二接触体沉积在半导体层上。在一种实施方式中,接着将ZnO溅射沉积在半导体层上。在第二激光划片步骤中,半导体和ZnO上都形成了图案。然后通过溅射沉积铝第二接触体。在第三划片/制图步骤中,铝被划片。铝的制图步骤之后,在步骤550中PV模块110的边缘被密封,接着是平板测试的步骤560。之后是步骤570,包括箔粘接(foil bonding),EVA应用,预热和层压(lamination)。在电站(electric station)中完成导线/压接(crimps),接着是在机械台上应用粘合剂,粘合剂固化之后在步骤570中清洁。在步骤580中,测试最终模块。
在图6a至6f中更全面地对三个激光划片步骤进行阐述。
实施例1
在这个实施例中,IGU 100是由碱石灰浮法玻璃作为平板202构成的。
这种类型的平板202为半导体提供支撑。在一种实施方式中,平板202首先在有序(in line)工业玻璃清洗机中清洗。
将SiO2薄膜层沉积在清洗过的平板202的一侧。SiO2可使污物保持在平板202中,从而不扩散至半导体层内,此外,SiO2层起到使平板202更平滑而减少结构的高低不平。在这个实施方式中,SiO2层是缓冲层或间隔体。SiO2是透明的,这样能允许光子进入IGU 100的能量转换部分。这层可以在制造玻璃时沉积,也可以作为碱石灰浮法玻璃的一个组件来购买,如图6a所示的一种实施方式中,平板202和SiO2薄膜层形成玻璃612。
SnO2层沉积在SiO2膜上从而形成太阳能电池的透明导电接触体。如图6a所示,SnO2层614位于玻璃612上。可在制造玻璃时沉积该层。SnO2层614具有的特性允许约70-90%的入射光透射至半导体的能量转换层,同时也充当电极来收集电流,SnO2层是透明金属氧化物导电电极。SnO2具有约5-15欧/平方(ohms/square)的导电率。这层可作为碱石灰浮法玻璃的一个组件来购买。
在这个实施方式中,IGU 100的电池是与三个激光划片步骤连接的。高功率工业激光用来去除或剥离每个薄膜材料的极薄条(SiO2不需此操作步骤)。采用三个激光划片步骤。划片数和剥离条之间的距离,或激光划片决定了电压和电流参数,这样,根据用途不同而变化电压的模块就制成了,在连续薄膜层里,激光剥离工艺用于那些材料的激光制图。这种激光划片工艺能在薄膜硅IUGs上产生可见条纹。激光划片工艺在SnO2层614上产生了条纹624,如图6b所示。
基于真空的等离子体增强化学气相薄膜沉积系统用于化学气相沉积氢化非晶硅半导体层220。三个起始层充当p-i-n半导体结。然后将第二p-i-n结沉积在装置上以增强模块的性能。这些半导体层从气体源材料中沉积,所述源材料包括硅烷,氢气,三甲基硼,甲烷,和磷化氢。沉积发生在140-220℃的温度范围内以形成氢化非晶硅串结电池,p1i1n1/p2i2n2。该工艺如图6c和6d所示。经激光划片工艺之后的串结电池p1i1n1/p2i2n2在图6c中示为层636,在图6d中示为层646。当日光进入该材料时,光能激发硅材料,因此产生电流。然后导电的SnO2和随后的ZnO及铝层充当正负电极。一个实施例如图6e所示。图6e中的四个层包括玻璃层612,SnO2层614,串结电池层646,和铝层658。
如前所述,这个材料利用激光材料剥离系统制成图案,如图6f所示,其中激光用来对己沉积的铝层进行刻片从而形成刻片的铝层668。
采用物理气相溅射沉积工艺将高反光ZnO薄层沉积在第二硅p-i-n层上。ZnO层具有高反光性,这样通过半导体层而未转换成电的任何日光被反射回硅层而得到另一次能量转换的机会。
提供了将夹层结构插入真空层压机之前用来预热玻璃/EVA/玻璃夹层结构的预热台。
微型联接装置180位于基板150边缘附近且未延伸出其边缘。微型联接装置180具有被超声粘接在金属箔条上的导线引线,金属箔条充当IGU 100正负联接(connections)。微型联接装置180这样定位以便从微型联接装置180中伸出的导线引线可以紧接基板150的边缘。微型联接装置180的放置优选处于对外部框架干扰最低同时也提供美观理想外形的位置上。使用电绝缘结构粘合剂将微型联接装置180粘在基板150的表面上。
实施例2
在这个实施例中,使用与实施例1相似的工艺。这个实施例中,第一接触体210是一个其上具有二氧化硅的多层结构,它位于平板202的内表面上并与其紧邻,并通过低压化学沉积法(LPCVD)沉积氧化锌。第二接触体230是一个多层结构,它含有银合金并用铟锡氧化物掺杂。
实施例3
在这个实施例中,使用与实施例1中相似的工艺。这个实施例中,半导体是氢化非晶硅碳。在这个实施例中,除了半导体是氢化非晶硅碳之外,使用与实施例1中相似的工艺。在a-Si沉积工艺中将含碳气体,如甲烷,引入反应装置中,从而将碳并入一些或全部非晶硅层中。
实施例4
在这个实施例中,半导体是铜铟镓二硒(CuInxGa1-xSe2)。在基板约275℃时将铜沉积在第二接触体230上。之后将镓沉积在已沉积的铜上。在基板约275℃时在硒流(selenium flux)的存在下将铟沉积在已沉积的镓上。然后在基板约275℃时在硒流的存在下将铜沉积在铟上,接着在基板约275℃时在硒流的存在下沉积镓,然后将铟沉积在已沉积的镓上。然后在硒流的存在下将装置加热至温度远高于275℃。
实施例5
在这个实施例中,CdTe/CdS IGU的制作工艺如下。通过真空蒸发,在温度为350℃的基板上沉积n-型CdS膜层。通过真空蒸发,在温度为350℃的基板上形成p-型CdTe层。p-型CdTe层在含氯化铜(CuCl2)的甲醇溶液或含CuCl2和CdCl2的CH3OH溶液中浸泡。然后自然晾干并在400℃的N2+O2(4∶1)气氛中煅烧15分钟。CdTe层的表面用K2Cr2O7+H2SO4+H2O溶液刻片。然后通过真空蒸发沉积Cu(10nm)/Au(100nm),并于150℃煅烧约三小时。
参照特定的具体实施方式描述和解释本发明时,所属领域的技术人员可意识到,可以对步骤和方案作出多种改写,修改,修饰,替换,删除,或增加而不背离发明的实质和范围。依照本发明的目标和实践,结果中预期的变化和差异是可预计的。因此,也就是说,本发明被随后权利要求的范围所限定,且此权利要求会尽量广泛地被解释,这是合理的。
Claims (21)
1.一种太阳能电池板,该太阳能电池板包括:
绝缘玻璃部件,其中,该绝缘玻璃部件包括:
第一基板;
与第一基板基本平行且相分隔的第二基板,其中,第一基板和第二基板密封;
位于第一基板和第二基板之间和边缘处且未延伸出第一基板和第二基板边缘的微型联接装置,其中,该微型联接装置在一对导线的第一末端和一对引线的第一末端之间装有电耦合器,而其中所述一对导线的第二末端延伸出了两块基板的边缘,所述一对引线的第二末端延伸穿过第一基板;和
与第一基板耦合并与所述一对引线的第二末端电耦合的光伏模块。
2.根据权利要求1所述的太阳能电池板,其中,所述光伏模块包括:
平板;
与平板耦合的第一接触体;
与第一接触体耦合的半导体;
与半导体和所述一对引线的第二末端耦合的第二接触体;
在第一接触体和第二接触体之间形成的连接件;和
使光伏模块对环境密封的密封层,其中,密封层包括孔隙,所述一对引线从该孔隙中延伸出来。
3.根据权利要求2所述的太阳能电池板,其中,所述半导体包括一个或多个p-n-i结电池,其中每个p-n-i结电池包括:
正极掺杂(p-掺杂)的非晶硅层;
无掺杂本征非晶硅层;和
负极掺杂(n-掺杂)的非晶硅层。
4.根据权利要求2所述的太阳能电池板,其中,所述半导体具有通过去除半导体的一部分或更多部分而形成的蚀刻,从而产生部分透明区域。
5.根据权利要求1所述的太阳能电池板,该太阳能电池板还包括限定太阳能电池板外缘的外部框架,其中,绝缘玻璃部件位于外部框架之内。
6.根据权利要求1所述的太阳能电池板,其中,微型联接装置符合UL1703规定的要求。
7.根据权利要求1所述的太阳能电池板,其中,微型联接装置具有低于预选值的小巧外形。
8.根据权利要求1所述的太阳能电池板,该太阳能电池板还包括与所述一对导线的第二末端耦合的电源设备,用于输出光伏模块所产生的电。
9.一种太阳能电池板,该太阳能电池板包括:
一组绝缘玻璃部件,其中,每个绝缘玻璃部件包括:
第一基板;
与第一基板基本平行且相分隔的第二基板,其中第一基板和第二基板密封;
位于第一基板和第二基板之间和边缘处且未延伸出第一基板和第二基板边缘的微型联接装置,其中,微型联接装置在一对导线的第一末端和一对引线的第一末端之间装有电耦合器,而其中所述一对导线的第二末端延伸出了两块基板的边缘,所述一对引线的第二末端延伸穿过第一基板;和
与第一基板耦合并与所述一对引线的第二末端电耦合的光伏模块;以及
限定太阳能电池板外缘的外部框架,其中,所述一组绝缘玻璃部件位于外部框架之内。
10.根据权利要求9所述的太阳能电池板,其中,所述光伏模块包括:
平板;
与平板耦合的第一接触体;
与第一接触体耦合的半导体;
与半导体和所述一对引线的第二末端耦合的第二接触体;
在第一接触体和第二接触体之间形成的连接件;和
使光伏模块对环境密封的密封层,其中,密封层包括孔隙,所述一对引线从该孔隙中延伸出来。
11.根据权利要求10所述的太阳能电池板,其中,所述半导体包括一个或多个p-n-i结电池,其中每个p-n-i结电池包括:
正极掺杂(p-掺杂)的非晶硅层;
无掺杂本征非晶硅层;和
负极掺杂(n-掺杂)非晶硅层。
12.根据权利要求10所述的太阳能电池板,其中,所述半导体具有通过去除半导体的一部分或更多部分而形成的蚀刻,从而产生部分透明区域。
13.根据权利要求9所述的太阳能电池板,其中,所述微型联接装置符合UL 1703中规定的要求。
14.根据权利要求9所述的太阳能电池板,其中,所述微型联接装置具有低于预选值的小巧外形。
15.根据权利要求9所述的太阳能电池板,该太阳能电池板还包括与所述一对导线的第二末端耦合的电源设备,用于输出光伏模块所产生的电。
16.一种绝缘玻璃部件,该绝缘玻璃部件包括:
第一基板;
与第一基板基本平行且相分隔的第二基板,其中,第一基板和第二基板密封;
位于第一基板和第二基板之间和边缘处且未延伸出第一基板和第二基板边缘的微型联接装置,其中,微型联接装置在一对导线的第一末端和一对引线的第一末端之间装有电耦合器,而其中所述一对导线的第二末端延伸出了两块基板的边缘,所述一对引线的第二末端延伸穿过第一基板;和
与第一基板耦合并与所述一对引线的第二末端电耦合的光伏模块。
17.根据权利要求16所述的绝缘玻璃部件,其中,所述光伏模块包括:
平板;
与平板耦合的第一接触体;
与第一接触体耦合的半导体;
与半导体和所述一对引线的第二末端耦合的第二接触体;
在第一接触体和第二接触体之间形成的连接件;和
使光伏模块对环境密封的密封层,其中,密封层包括孔隙,所述一对引线从该孔隙中延伸出来。
18.根据权利要求17所述的绝缘玻璃部件,其中,所述半导体包括一个或多个p-n-i结电池,其中,每个p-n-i结电池包括:
正极掺杂(p-掺杂)的非晶硅层;
无掺杂本征非晶硅层;和
负极掺杂(n-掺杂)非晶硅层。
19.根据权利要求17所述的绝缘玻璃部件,其中,所述半导体具有通过去除半导体的一部分或更多部分而形成的蚀刻,从而产生部分透明区域。
20.根据权利要求16所述的绝缘玻璃部件,其中,所述微型联接装置符合UL 1703规定的要求。
21.根据权利要求16所述的绝缘玻璃部件,其中,所述微型联接装置具有低于预选值的小巧外形。
Applications Claiming Priority (11)
Application Number | Priority Date | Filing Date | Title |
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US19670108P | 2008-02-28 | 2008-02-28 | |
US19670008P | 2008-02-28 | 2008-02-28 | |
US61/196,700 | 2008-02-28 | ||
US61/196,701 | 2008-02-28 | ||
US19670208P | 2008-04-29 | 2008-04-29 | |
US19670308P | 2008-04-29 | 2008-04-29 | |
US19670408P | 2008-04-29 | 2008-04-29 | |
US61/196,702 | 2008-04-29 | ||
US61/196,704 | 2008-04-29 | ||
US61/196,703 | 2008-04-29 | ||
PCT/US2009/001318 WO2009108385A2 (en) | 2008-02-28 | 2009-03-02 | Insulating glass unit with integrated mini-junction device |
Publications (1)
Publication Number | Publication Date |
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CN102017179A true CN102017179A (zh) | 2011-04-13 |
Family
ID=41016661
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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CN2009801150728A Pending CN102017179A (zh) | 2008-02-28 | 2009-03-02 | 集成有微型联接装置的绝缘玻璃部件 |
Country Status (7)
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US (1) | US20090272428A1 (zh) |
EP (1) | EP2248183A2 (zh) |
CN (1) | CN102017179A (zh) |
BR (1) | BRPI0908401A2 (zh) |
CA (1) | CA2716361A1 (zh) |
IL (1) | IL207837A0 (zh) |
WO (1) | WO2009108385A2 (zh) |
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SE0901339A1 (sv) * | 2009-10-16 | 2010-10-05 | Förfarande att inkapsla solceller | |
US8894754B2 (en) * | 2011-08-10 | 2014-11-25 | Semprius, Inc. | Breathing and desiccant regenerating cycle for reducing condensation in concentrator photovoltaic modules |
WO2014163578A1 (en) * | 2013-04-03 | 2014-10-09 | Robert Bosch (Sea) Pte. Ltd. | Building integrated photovoltaic insulating glass unit and spacer bar connector for the same |
WO2017165938A1 (en) * | 2016-03-30 | 2017-10-05 | W&E International (Canada) Corp. | A high efficient solar thermal and solar electricity combined unit |
JP2021039984A (ja) * | 2019-08-30 | 2021-03-11 | パナソニック株式会社 | 太陽電池モジュール、太陽電池モジュール作製方法 |
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US3638026A (en) | 1970-06-29 | 1972-01-25 | Honeywell Inc | Or photovoltaic device |
US3978333A (en) | 1974-04-15 | 1976-08-31 | Everett Crisman | Photovoltaic device having polycrystalline base |
US4233085A (en) | 1979-03-21 | 1980-11-11 | Photon Power, Inc. | Solar panel module |
IL57908A0 (en) | 1979-07-07 | 1979-11-30 | Yeda Res & Dev | Photovoltaic materials |
US4633031A (en) | 1982-09-24 | 1986-12-30 | Todorof William J | Multi-layer thin film, flexible silicon alloy photovoltaic cell |
US4568792A (en) | 1984-02-02 | 1986-02-04 | Sri International | Photovoltaic cell including doped cadmium telluride, a dislocation preventing agent and improved ohmic contacts |
US4529832A (en) | 1984-02-21 | 1985-07-16 | Savin Corporation | Lead-cadmium-sulphide solar cell |
US4609771A (en) | 1984-11-02 | 1986-09-02 | Sovonics Solar Systems | Tandem junction solar cell devices incorporating improved microcrystalline p-doped semiconductor alloy material |
US4713492A (en) | 1985-10-21 | 1987-12-15 | Energy Conversion Devices, Inc. | Stowable large area solar power module |
JP3408074B2 (ja) * | 1996-09-06 | 2003-05-19 | キヤノン株式会社 | 屋根材一体型太陽電池及びその施工方法 |
US6077722A (en) * | 1998-07-14 | 2000-06-20 | Bp Solarex | Producing thin film photovoltaic modules with high integrity interconnects and dual layer contacts |
US6630622B2 (en) * | 2001-01-15 | 2003-10-07 | Annemarie Hvistendahl Konold | Combined solar electric power and liquid heat transfer collector panel |
DE10146498C2 (de) * | 2001-09-21 | 2003-11-20 | Arnold Glaswerke | Photovoltaik-Isolierverglasung |
US20030116185A1 (en) * | 2001-11-05 | 2003-06-26 | Oswald Robert S. | Sealed thin film photovoltaic modules |
US7217882B2 (en) | 2002-05-24 | 2007-05-15 | Cornell Research Foundation, Inc. | Broad spectrum solar cell |
US7394016B2 (en) * | 2005-10-11 | 2008-07-01 | Solyndra, Inc. | Bifacial elongated solar cell devices with internal reflectors |
-
2009
- 2009-03-02 US US12/395,889 patent/US20090272428A1/en not_active Abandoned
- 2009-03-02 BR BRPI0908401A patent/BRPI0908401A2/pt unknown
- 2009-03-02 CA CA2716361A patent/CA2716361A1/en not_active Abandoned
- 2009-03-02 EP EP09715992A patent/EP2248183A2/en not_active Withdrawn
- 2009-03-02 CN CN2009801150728A patent/CN102017179A/zh active Pending
- 2009-03-02 WO PCT/US2009/001318 patent/WO2009108385A2/en active Application Filing
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2010
- 2010-08-26 IL IL207837A patent/IL207837A0/en unknown
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CA2716361A1 (en) | 2009-09-03 |
EP2248183A2 (en) | 2010-11-10 |
US20090272428A1 (en) | 2009-11-05 |
WO2009108385A3 (en) | 2009-12-30 |
IL207837A0 (en) | 2010-12-30 |
BRPI0908401A2 (pt) | 2019-05-28 |
WO2009108385A2 (en) | 2009-09-03 |
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