CN102006017A - Biasing circuit and power amplifier circuit thereof - Google Patents
Biasing circuit and power amplifier circuit thereof Download PDFInfo
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- CN102006017A CN102006017A CN201010570407XA CN201010570407A CN102006017A CN 102006017 A CN102006017 A CN 102006017A CN 201010570407X A CN201010570407X A CN 201010570407XA CN 201010570407 A CN201010570407 A CN 201010570407A CN 102006017 A CN102006017 A CN 102006017A
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- resistance
- digital adjustable
- biasing circuit
- biasing
- adjustable resistance
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Abstract
The invention discloses a biasing circuit. The biasing circuit comprises an input end, an output end, a second transistor, a first resistor, a second resistor and a digital adjustable resistor, wherein the digital adjustable resistor and the second resistor are orderly connected between the input end and the collector of the second transistor in series; the first resistor is connected between the output end and the base of the transistor in series; the second resistor and the intermediate node of the digital adjustable resistor are connected with the base of the second transistor; the emitter of the second transistor is connected with the ground; and the biasing circuit is connected with a bias voltage through the input end and provides bias for the power amplifier through the output end.
Description
[technical field]
The present invention relates to the IC design field, especially relate to a kind of biasing circuit and its power amplification circuit.
[background technology]
In IC (Integrated Circuit) design, designing an outstanding dc bias circuit (DC Bias Circuit) is a very arduous job, especially designs such as power amplifier for designing complicated circuit.This is because some circuit performance height depend on the dc bias circuit control precision, such as the power output and the power added efficiency of power amplifier.
Radio frequency (Radio Frequency, RF)/microwave integrated circuit in, have two factors may cause the variation of dc offset voltage.One is the model accuracy that uses in simulation software, and another is the process deviation that is caused by the semiconductor manufacturing.For Designing power amplifier goes out an outstanding dc bias circuit, not only need to do a large amount of simulation work, also need to do a large amount of accent work of repairing.
For the problems referred to above three kinds of solutions are arranged at present.
1, improves the model accuracy of active device and passive device, need do a lot of enquiry based works in order to realize this purpose.
2, repair accent in design, this will expend a large amount of time, and need the engineer to do extensive work in the laboratory.Usually, need to adjust resistance with coupling entire circuit demand by laser trimming device (Laser Trimmer).In order to satisfy laser trimming device needs, also need the engineer to do a large amount of design works, such as the many dissimilar patterns of design.
3, in manufacture process, adjust design by the self adaptation metal level.Though this method can improve output, this program itself can increase a lot of production costs, and this program also is very consuming time.
Therefore, wish that a kind of improved biasing circuit of proposition and power amplification circuit overcome the problems referred to above.
[summary of the invention]
One of purpose of the present invention is to provide a kind of biasing circuit that can address the above problem.
Two of purpose of the present invention provides a kind of power amplification circuit that can address the above problem.
In order to address the above problem, according to an aspect of the present invention, the invention provides a kind of biasing circuit, it comprises: input, output, transistor seconds, first resistance, second resistance and digital adjustable resistance.Described digital adjustable resistance and described second resistance are connected between the collector electrode of described input and transistor seconds successively, described first resistance string is coupled between the base stage of described output and transistor seconds, the intermediate node of described second resistance and described digital adjustable resistance links to each other with the base stage of transistor seconds, and the emitter of described transistor seconds links to each other with ground.Wherein said biasing circuit connects bias voltage by input, provides biasing by output for power amplifier.
Further, described digital adjustable resistance comprises some resistance units and some switch elements, by the series connection of part or all of resistance unit being selected in the conducting of described switch element or the control that ends or and being connected to form described digital adjustable resistance.
Further, the control signal of each switch element is respectively from a memory circuit, realizes adjustment to the resistance of described digital adjustable resistance by the programming to memory circuit.
Further, described resistance unit is N, is designated as R31, R32, R3N respectively, wherein is provided with: R32=2
2-1* R31, R33=2
3-1* R31, R3N=2
N-1* R31, wherein N is a natural number.
According to another aspect of the present invention, the invention provides a kind of power amplification circuit, it comprises: power amplifier and the biasing circuit of biasing is provided for power amplifier.Described biasing circuit comprises: input, output, transistor seconds, first resistance, second resistance and digital adjustable resistance.Described digital adjustable resistance and described second resistance are connected between the collector electrode of described input and transistor seconds successively, described first resistance string is coupled between the base stage of described output and transistor seconds, the intermediate node of described second resistance and described digital adjustable resistance links to each other with the base stage of transistor seconds, and the emitter of described transistor seconds links to each other with ground.Wherein said biasing circuit connects bias voltage by input, provides biasing by output for power amplifier.
Further, described power amplification circuit also includes: input and output capacitors, and an end of described input capacitance connects the base stage of described power amplifier, other end input radio frequency input signal; One end of described output capacitance connects the collector electrode of described power amplifier, other end output radio frequency amplifying signal.
According to a further aspect of the invention, the invention provides a kind of biasing circuit, it includes digital adjustable resistance.Described digital adjustable resistance comprises some resistance units and some switch elements, by the series connection of part or all of resistance unit being selected in the conducting of described switch element or the control that ends or and being connected to form described digital adjustable resistance.
Further, the control signal of each switch element is respectively from a memory circuit, realizes adjustment to the resistance of described digital adjustable resistance by the programming to memory circuit.
Further, described resistance unit is N, is designated as R31, R32, R3N respectively, wherein is provided with: R32=2
2-1* R31, R33=2
3-1* R31, R3N=2
N-1* R31, wherein N is a natural number.
Compared with prior art, replaced with digital resistance in the biasing circuit in the present invention and repaiied accent resistance, thereby made that the design of biasing circuit is more simple, performance is more accurately controlled.
About other purposes of the present invention, feature and advantage are described in detail in embodiment below in conjunction with accompanying drawing.
[description of drawings]
In conjunction with reaching ensuing detailed description with reference to the accompanying drawings, the present invention will be more readily understood, the structure member that wherein same Reference numeral is corresponding same, wherein:
Fig. 1 shows the circuit diagram that can be used for cellular power amplification circuit among the present invention;
Fig. 2 A is an example of the adjustable resistance in the biasing circuit among Fig. 1;
Fig. 2 B is another example of the adjustable resistance in the biasing circuit among Fig. 1;
Fig. 2 C is another example of the adjustable resistance in the biasing circuit among Fig. 1.
[embodiment]
For above-mentioned purpose of the present invention, feature and advantage can be become apparent more, the present invention is further detailed explanation below in conjunction with the drawings and specific embodiments.
Detailed description of the present invention mainly presents by program, step, logical block, process or other symbolistic descriptions, the running of the technical scheme among its direct or indirect simulation the present invention.Affiliated those of skill in the art use these descriptions herein and state that the others skilled in the art in affiliated field effectively introduce their work essence.
Alleged herein " embodiment " or " embodiment " are meant that special characteristic, structure or the characteristic relevant with described embodiment can be contained at least one implementation of the present invention at least.Different local in this manual " in one embodiment " that occur also nonessentially all refer to same embodiment, must not be yet with other embodiment mutually exclusive separately or select embodiment.In addition, represent the sequence of modules in method, flow chart or the functional block diagram of one or more embodiment and revocablely refer to any particular order, also be not construed as limiting the invention.
Fig. 1 shows the circuit diagram that can be used for cellular power amplification circuit 100 among the present invention.Described power amplification circuit 100 comprises power amplifier Q1, the input capacitance Cin that links to each other with the base stage of power amplifier Q1, the output capacitance Cout that links to each other with the collector electrode of power amplifier Q1 and the biasing circuit 110 that biasing is provided for power amplifier Q1.
The other end P1 of described input capacitance Cin can import the RF input signal, and the other end P2 of described output capacitance Cout can export the RF output signal of amplifying via power amplifier Q1.Collector electrode P3 and the power Vcc of power amplifier Q1 are electrical connected, its grounded emitter.Described power amplifier Q1 can amplify the RF output signal that obtains amplifying to the RF input signal.
Described biasing circuit 110 has the input P2 that connects bias voltage Vbais, and it provides biasing according to described bias voltage Vbais to the base stage of described power amplifier Q1.Described biasing circuit 110 comprises transistor Q2, resistance R 1, resistance R 2 and digital adjustable resistance R3.Described digital adjustable resistance R3 and described resistance R 2 are connected between input P2 and the transistorized collector electrode successively, described resistance R 1 is series between the base stage of the base stage of power amplifier Q1 and transistor Q2, the intermediate node of described resistance R 2 and digital adjustable resistance R3 links to each other the grounded emitter of described transistor Q2 with the base stage of transistor Q2.
In order to make described biasing circuit 110 biasing more accurately is provided for power amplifier Q1, can repair accent wanting accurately to the resistance R 3 in the described biasing circuit 110 with the coupling entire circuit.In the prior art repairing of the resistance in the bigoted circuit being transferred generally all is that the mode that adopts laser trimming or self adaptation metal level to repair accent is adjusted, and as mentioning in the background, aforesaid way all has very big shortcoming or limitation.In the present invention, described resistance R 3 adopts digital adjustable resistance, can accurately control the size of described resistance R 3 by software programming, like this can be so that the design of biasing circuit 110 is more simple, performance is more accurately controlled, also can reduce the requirement of 110 pairs of manufacturing process of described biasing circuit simultaneously.
Described digital adjustable resistance can comprise some resistance units and some switch elements, and the number of resistance unit and switch element can design according to requirement of engineering, for the RF dc bias circuit, common 3 or 4 just much of that.Conducting by each switch element or the combination that ends can be selected the serial or parallel connection of part or all of resistance unit and and then form final digital adjustable resistance.Therefore, by can realize adjustment to the conducting of described switch element or the control that ends to the resistance of described digital adjustable resistance.The control signal of each switch element is respectively from a memory circuit (not shown).Can realize programming by software, thereby can control the conducting of each switch element or end, and then realize adjustment the resistance of described digital adjustable resistance to memory circuit.Like this, to the repairing accent and will become simple unusually of resistance R 3, and can carry out the accent of repairing repeatedly.
Fig. 2 A shows the example of the digital adjustable resistance R3 in the biasing circuit 110 among Fig. 1, wherein said digital adjustable resistance R3 comprises three resistance unit R31, R32, R33 and four switch element SW1, SW2, SW3, SW4, carry out the resistance adjustment by controlling described switch element, such as switch element SW1 and all conductings of SW2, the rest switch unit ends, R31 is skipped owing to short circuit like this, then R3=R32+R33; Switch element SW1, SW2, SW3 conducting for another example, the rest switch unit ends, and R31, R32 are skipped owing to short circuit like this, then R3=R33.
Fig. 2 B shows another example of the digital adjustable resistance R3 in the biasing circuit 110 among Fig. 1, and wherein the difference of the example shown in this example and Fig. 2 A is: the number of switch element and arrangement mode, it is identical that resistance is adjusted mode.
Fig. 2 C shows another example of the digital adjustable resistance R3 in the biasing circuit 110 among Fig. 1.As shown in the figure, described digital adjustable resistance R3 comprise mutual series connection N resistance unit R31, R32, R3N and with N N switch element SW31, SW32, the SW3N that resistance unit is corresponding.In one embodiment, can be provided with: R32=2
2-1* R31, R33=2
3-1* R31 ..., R3N=2
N-1* R31 can obtain the Standard resistance range from 0 to (2 of digital adjustable resistance R3 like this
N-1) Standard resistance range of * R31, wherein N is a natural number.In one embodiment, the resistance of N resistance can be consistent, such as being 10 ohm, also can be set to various resistances as required, such as being respectively 20 ohm, 25 ohm and 30 ohm etc.
Fig. 2 A, Fig. 2 B and Fig. 2 C only are exemplary three examples that provided, and can design various digital adjustable resistances according to identical or similar principle.
The structure that it is pointed out that the biasing circuit 110 among the present invention also can adopt the biasing circuit of other types, as long as this biasing circuit can provide biasing for power amplifier Q1.All biasing circuits all can run into the accent problem of repairing of resistance usually when design, adopt the digital adjustable resistance among the present invention can make the design of various biasing circuits more simple, and performance is more accurately controlled.
The implication that links to each other or connect among the present invention not only comprises directly joins or connects, also comprises linking to each other indirectly or connecting, such as via continuous behind a resistance, the functional circuit.
Above the present invention has been carried out the enough detailed description with certain particularity.Under those of ordinary skill in the field should be appreciated that the description among the embodiment only is exemplary, under the prerequisite that does not depart from true spirit of the present invention and scope, make change and all should belong to protection scope of the present invention.The present invention's scope required for protection is limited by described claims, rather than limit by the foregoing description among the embodiment.
Claims (9)
1. biasing circuit, it is characterized in that: it comprises: input, output, transistor seconds, first resistance, second resistance and digital adjustable resistance,
Described digital adjustable resistance and described second resistance are connected between the collector electrode of described input and transistor seconds successively, described first resistance string is coupled between the base stage of described output and transistor seconds, the intermediate node of described second resistance and described digital adjustable resistance links to each other with the base stage of transistor seconds, the emitter of described transistor seconds links to each other with ground
Wherein said biasing circuit connects bias voltage by input, provides biasing by output for power amplifier.
2. biasing circuit according to claim 1, it is characterized in that, described digital adjustable resistance comprises some resistance units and some switch elements, by the series connection of part or all of resistance unit being selected in the conducting of described switch element or the control that ends or and being connected to form described digital adjustable resistance.
3. biasing circuit according to claim 2 is characterized in that, the control signal of each switch element is respectively from a memory circuit, realizes adjustment to the resistance of described digital adjustable resistance by the programming to memory circuit.
4. biasing circuit according to claim 2 is characterized in that, described resistance unit is N, is designated as R31, R32, R3N respectively, wherein is provided with: R32=2
2-1* R31, R33=2
3-1* R31, R3N=2
N-1* R31, wherein N is a natural number.
5. power amplification circuit, it is characterized in that: it comprises: power amplifier and for power amplifier provide biasing as the arbitrary described biasing circuit of claim 1 to 4.
6. power amplification circuit according to claim 5 is characterized in that it also includes: input and output capacitors,
One end of described input capacitance connects the base stage of described power amplifier, other end input radio frequency input signal; One end of described output capacitance connects the collector electrode of described power amplifier, other end output radio frequency amplifying signal.
7. biasing circuit, it is characterized in that: it includes digital adjustable resistance, described digital adjustable resistance comprises some resistance units and some switch elements, by the series connection of part or all of resistance unit being selected in the conducting of described switch element or the control that ends or and being connected to form described digital adjustable resistance.
8. biasing circuit according to claim 7 is characterized in that, the control signal of each switch element is respectively from a memory circuit, realizes adjustment to the resistance of described digital adjustable resistance by the programming to memory circuit.
9. biasing circuit according to claim 7 is characterized in that, described resistance unit is N, is designated as R31, R32, R3N respectively, wherein is provided with: R32=2
2-1* R31, R33=2
3-1* R31, R3N=2
N-1* R31, wherein N is a natural number.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201010570407 CN102006017B (en) | 2010-12-02 | 2010-12-02 | Biasing circuit and power amplifier circuit thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201010570407 CN102006017B (en) | 2010-12-02 | 2010-12-02 | Biasing circuit and power amplifier circuit thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102006017A true CN102006017A (en) | 2011-04-06 |
| CN102006017B CN102006017B (en) | 2013-11-06 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 201010570407 Active CN102006017B (en) | 2010-12-02 | 2010-12-02 | Biasing circuit and power amplifier circuit thereof |
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| CN (1) | CN102006017B (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106026932A (en) * | 2015-03-30 | 2016-10-12 | 株式会社村田制作所 | Power amplifier module |
| CN107276151A (en) * | 2017-06-14 | 2017-10-20 | 南京中感微电子有限公司 | One kind trims circuit and battery protection chip |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6333677B1 (en) * | 2000-10-10 | 2001-12-25 | Rf Micro Devices, Inc. | Linear power amplifier bias circuit |
| CN2599747Y (en) * | 2002-12-03 | 2004-01-14 | 比亚迪股份有限公司 | Resistance regulating device in integrated circuit |
| CN1537358A (en) * | 2001-07-30 | 2004-10-13 | ���ɶȰ뵼�幫˾ | Active bias circuit |
| CN101394152A (en) * | 2007-09-20 | 2009-03-25 | 锐迪科微电子（上海）有限公司 | Radio frequency power amplifier circuit |
| CN201869171U (en) * | 2010-12-02 | 2011-06-15 | 无锡中普微电子有限公司 | Biasing circuit and power amplifying circuit |
-
2010
- 2010-12-02 CN CN 201010570407 patent/CN102006017B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6333677B1 (en) * | 2000-10-10 | 2001-12-25 | Rf Micro Devices, Inc. | Linear power amplifier bias circuit |
| CN1537358A (en) * | 2001-07-30 | 2004-10-13 | ���ɶȰ뵼�幫˾ | Active bias circuit |
| CN2599747Y (en) * | 2002-12-03 | 2004-01-14 | 比亚迪股份有限公司 | Resistance regulating device in integrated circuit |
| CN101394152A (en) * | 2007-09-20 | 2009-03-25 | 锐迪科微电子（上海）有限公司 | Radio frequency power amplifier circuit |
| CN201869171U (en) * | 2010-12-02 | 2011-06-15 | 无锡中普微电子有限公司 | Biasing circuit and power amplifying circuit |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106026932A (en) * | 2015-03-30 | 2016-10-12 | 株式会社村田制作所 | Power amplifier module |
| CN106026932B (en) * | 2015-03-30 | 2021-01-12 | 株式会社村田制作所 | Power amplifying module |
| CN107276151A (en) * | 2017-06-14 | 2017-10-20 | 南京中感微电子有限公司 | One kind trims circuit and battery protection chip |
| CN107276151B (en) * | 2017-06-14 | 2019-09-13 | 南京中感微电子有限公司 | One kind trimming circuit and battery protection chip |
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| Publication number | Publication date |
|---|---|
| CN102006017B (en) | 2013-11-06 |
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