CN2599747Y - Resistance regulating device in integrated circuit - Google Patents

Resistance regulating device in integrated circuit Download PDF

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Publication number
CN2599747Y
CN2599747Y CNU022900861U CN02290086U CN2599747Y CN 2599747 Y CN2599747 Y CN 2599747Y CN U022900861 U CNU022900861 U CN U022900861U CN 02290086 U CN02290086 U CN 02290086U CN 2599747 Y CN2599747 Y CN 2599747Y
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CN
China
Prior art keywords
circuit
resistance
resistor
memory
repairing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
CNU022900861U
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Chinese (zh)
Inventor
罗如忠
王传福
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
BYD Co Ltd
Original Assignee
BYD Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
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Priority to CNU022900861U priority Critical patent/CN2599747Y/en
Application granted granted Critical
Publication of CN2599747Y publication Critical patent/CN2599747Y/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Abstract

The utility model relates to a resistance value adjusting device for a resistor in a semiconductor integrated circuit, comprising a logical circuit (1), a storage circuit (2), a switch controlled circuit (3). The resistance error received from an adjusting signal processed by the logical circuit (1) is stored in the storage circuit (2); the storage circuit (2) controls a drive circuit in the switch controlled circuit (3) to realize the alternative short circuit operation for a sub resistor through a plurality of switch components connected in parallel with the two ends of the sub resistor in a resistor to be adjusted, thereby adjusting the resistance value of the resistor to be adjusted; the adjustment can be conducted in testing the chip, and after the chip encapsulation, which reduces the adjustment cost and the occupied area of the chip; the different adjustment requirement can be realized by selecting different storage circuit.

Description

Resistance repaiies the accent device in a kind of integrated circuit
Technical field
The utility model relates to the resistance of resistor in a kind of semiconductor integrated circuit and repaiies the accent device, and accent can be repaiied in this accent of repairing when chip testing, also can carry out after Chip Packaging is finished.
Background technology
At present, the repairing to transfer of integrated circuit resistor has dual mode, and a kind of is to utilize laser beam that the resistance film matrix is cut and the sectional area that changes resistance, thereby changes resistance, as for diffusion resistance, polysilicon resistance is exactly to blow the fuse that is parallel to the resistance two ends with laser to realize repairing accent; Second kind is will be parallel to resistance two ends fuse opening with voltage source to realize repairing accent.Laser trimming will depend on expensive laser trimming system, and voltage source scorification silk will take than the large chip area and make pad because the probe introducing will be repaiied the accent point.
The innovation and creation content
In order to overcome the deficiencies in the prior art, the utility model provides a kind of accent device of repairing.
A kind of integrated circuit resistor of the present utility model repair the accent device, comprise logical circuit (1), memory circuit (2), ON-OFF control circuit (3), repairing the resistance error that tonal signal obtains after logical circuit (1) is handled is stored in the memory circuit (2), drive circuit in memory circuit (2) the control switch control circuit (3) and then wait to repair the switching device of transferring each sub-resistance two ends in the resistance and realize the short circuit operation selectively of each sub-resistance is waited to repair the resistance of transferring resistance thereby adjust by a plurality of being parallel to.
Described memory circuit (2) can select for use at least a memory unit among PROM, EEPROM, Flash memory, the OTP (disposable programmable device) to constitute.
At least a among the optional NMOSFET of described switching device, PMOSFET, photoelectric coupled device, PJFET, the NJFET.
Wait that the resistance of repairing accent is designed to be in series by several sub-resistances usually, each sub-resistance two ends controlled switching device in parallel, the conducting resistance of switch is less than the sub-resistance that is connected with it.When ON-OFF control circuit provided different control signal combinations, the resistance of being repaiied accent just can obtain different resistance values.After integrated circuit (IC) chip manufacturing completion, when chip testing or in the finished product test of encapsulation back, the control information of resistance with other test system and test and after doing analysis, is write with digital form and to repair adjusting information; Repair tonal signal and also can repair accent automatically to the resistance of same circuit by producing in the same integrated circuit.The final parameter adjustment that realizes integrated circuit (IC) products.
Description of drawings
Fig. 1 is an electric theory diagram of the present utility model;
Fig. 2 is a switching device schematic diagram of the present utility model.
Embodiment
Below in conjunction with accompanying drawing the utility model is further specified:
In Fig. 1, repair tonal signal and detect and be input to logical circuit (1) by other device, send into after treatment in the memory circuit (2) and preserve, memory circuit adopts the EEPROM memory unit, and ON-OFF control circuit (3) will repair that adjusting information reads in and control corresponding K switch by drive circuit in the memory circuit nRealization is to R 1To R iThe selectable short circuit operation of sub-resistance is repaiied the resistance of transferring resistance thereby adjust, and promptly is equivalent to the resistance of adjusting Rx.Because the memory component that adopts can be preserved for a long time and repair tonal signal, so Rx can be repaiied accent for a long time.Adopt EEPROM to make memory circuit, then Rx can change as required at any time.Repairing tonal signal can import with serial or parallel.
Memory circuit (2) also can select for use at least a memory unit among PROM, Flash memory, the OTP (disposable programmable device) to constitute.
The switching device K of ON-OFF control circuit in Fig. 2 presentation graphs 1 (3) n, wherein n=1,2 ,-, i, can select N-channel MOS FET (NMOSFET) for use, at least a among the semiconductor switch device that P channel mosfet (PMOSFET), photoelectric coupled device, P raceway groove JFET (PJFET), N raceway groove JEET (NJFET) are 5 types.
The utility model has the advantages that: save and trim cost, reduce chip area footprints, select different Memory circuit can satisfy the different needs that trim.

Claims (3)

1, a kind of integrated circuit resistor repaiies the accent device, it is characterized in that: comprise logical circuit (1), memory circuit (2), ON-OFF control circuit (3), repairing the resistance error that tonal signal obtains after logical circuit (1) is handled is stored in the memory circuit (2), drive circuit in memory circuit (2) the control switch control circuit (3) and then wait to repair the switching device of transferring each sub-resistance two ends in the resistance and realize the short circuit operation selectively of each sub-resistance is waited to repair the resistance of transferring resistance thereby adjust by a plurality of being parallel to.
2, according to the described accent device of repairing of claim 1, it is characterized in that: described memory circuit (2) can select for use at least a memory unit among PROM, EEPROM, Flash memory, the OTP (disposable programmable device) to constitute.
3, according to the described accent device of repairing of claim 1, it is characterized in that: at least a formation among the optional NMOSFET of described switching device, PMOSFET, photoelectric coupled device, PJFET, the NJFET.
CNU022900861U 2002-12-03 2002-12-03 Resistance regulating device in integrated circuit Expired - Lifetime CN2599747Y (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CNU022900861U CN2599747Y (en) 2002-12-03 2002-12-03 Resistance regulating device in integrated circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CNU022900861U CN2599747Y (en) 2002-12-03 2002-12-03 Resistance regulating device in integrated circuit

Publications (1)

Publication Number Publication Date
CN2599747Y true CN2599747Y (en) 2004-01-14

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
CNU022900861U Expired - Lifetime CN2599747Y (en) 2002-12-03 2002-12-03 Resistance regulating device in integrated circuit

Country Status (1)

Country Link
CN (1) CN2599747Y (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102006017A (en) * 2010-12-02 2011-04-06 无锡中普微电子有限公司 Biasing circuit and power amplifier circuit thereof
CN102323845A (en) * 2011-06-07 2012-01-18 无锡中星微电子有限公司 Trimming control circuit
CN106330175A (en) * 2016-08-30 2017-01-11 厦门安斯通微电子技术有限公司 Programmable trimming circuit multiplexing chip output port
CN109450433A (en) * 2018-08-02 2019-03-08 上海芯哲微电子科技股份有限公司 A kind of two-way integrated circuit trims device
CN114814556A (en) * 2022-06-28 2022-07-29 苏州贝克微电子股份有限公司 Efficient integrated circuit chip trimming test circuit and test method

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102006017A (en) * 2010-12-02 2011-04-06 无锡中普微电子有限公司 Biasing circuit and power amplifier circuit thereof
CN102323845A (en) * 2011-06-07 2012-01-18 无锡中星微电子有限公司 Trimming control circuit
CN102323845B (en) * 2011-06-07 2013-06-12 无锡中星微电子有限公司 Trimming control circuit
CN106330175A (en) * 2016-08-30 2017-01-11 厦门安斯通微电子技术有限公司 Programmable trimming circuit multiplexing chip output port
CN109450433A (en) * 2018-08-02 2019-03-08 上海芯哲微电子科技股份有限公司 A kind of two-way integrated circuit trims device
CN109450433B (en) * 2018-08-02 2022-08-05 上海芯哲微电子科技股份有限公司 Double-circuit integrated circuit trimming device
CN114814556A (en) * 2022-06-28 2022-07-29 苏州贝克微电子股份有限公司 Efficient integrated circuit chip trimming test circuit and test method

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Date Code Title Description
C14 Grant of patent or utility model
GR01 Patent grant
C17 Cessation of patent right
CX01 Expiry of patent term

Expiration termination date: 20121203

Granted publication date: 20040114