CN101997507A - 复合基板的制造方法 - Google Patents
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- 239000000758 substrate Substances 0.000 title claims abstract description 162
- 239000002131 composite material Substances 0.000 title claims abstract description 42
- 238000000034 method Methods 0.000 title claims abstract description 37
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 28
- 238000000227 grinding Methods 0.000 claims abstract description 28
- 230000015572 biosynthetic process Effects 0.000 claims abstract description 10
- 238000010276 construction Methods 0.000 claims description 17
- 239000011230 binding agent Substances 0.000 claims description 11
- 238000010438 heat treatment Methods 0.000 abstract description 14
- 239000000853 adhesive Substances 0.000 abstract description 3
- 230000001070 adhesive effect Effects 0.000 abstract description 3
- 230000003247 decreasing effect Effects 0.000 abstract 1
- 238000005520 cutting process Methods 0.000 description 7
- 239000004065 semiconductor Substances 0.000 description 6
- 229910013641 LiNbO 3 Inorganic materials 0.000 description 5
- 239000011521 glass Substances 0.000 description 4
- 229910017976 MgO 4 Inorganic materials 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 239000003795 chemical substances by application Substances 0.000 description 3
- 230000003628 erosive effect Effects 0.000 description 3
- 239000010980 sapphire Substances 0.000 description 3
- 229910052594 sapphire Inorganic materials 0.000 description 3
- 238000004528 spin coating Methods 0.000 description 3
- WSMQKESQZFQMFW-UHFFFAOYSA-N 5-methyl-pyrazole-3-carboxylic acid Chemical compound CC1=CC(C(O)=O)=NN1 WSMQKESQZFQMFW-UHFFFAOYSA-N 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 2
- 235000019687 Lamb Nutrition 0.000 description 2
- 239000004411 aluminium Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical compound [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000010422 painting Methods 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 238000009987 spinning Methods 0.000 description 2
- NIXOWILDQLNWCW-UHFFFAOYSA-N Acrylic acid Chemical class OC(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- 229910002601 GaN Inorganic materials 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 238000002788 crimping Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 230000008676 import Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 229910052744 lithium Inorganic materials 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- 238000010023 transfer printing Methods 0.000 description 1
- RIUWBIIVUYSTCN-UHFFFAOYSA-N trilithium borate Chemical compound [Li+].[Li+].[Li+].[O-]B([O-])[O-] RIUWBIIVUYSTCN-UHFFFAOYSA-N 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02535—Details of surface acoustic wave devices
- H03H9/02543—Characteristics of substrate, e.g. cutting angles
- H03H9/02574—Characteristics of substrate, e.g. cutting angles of combined substrates, multilayered substrates, piezoelectrical layers on not-piezoelectrical substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
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- H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
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- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
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- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
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Abstract
对于具有用粘结层将第1基板和第2基板粘合的结构的复合基板,可以进一步减少其在制造工序中受到的限制。本发明的复合基板(10)的制造方法,包括:形成工序,在第1基板(12)的表面形成元件构造部(31);磨削工序,固定所述第1基板(12),对所述第1基板(12)的背面(13)进行磨削;粘合工序,用由粘结剂形成的粘结层(16)将第2基板(14)粘合在所述磨削过的背面(13)。如此,在形成操作性受加热影响的粘结层(16)之前、并且在对由于加热而强度下降的第1基板(12)进行磨削之前,形成包含加热工序的元件构造部(31)。此外,可以采用压电基板作为第1基板(12),采用支承压电基板的支承基板作为第2基板(14),也可以在第1基板(12)的表面(11)上形成弹性波元件用电极(18)作为元件构造部(31)。
Description
技术领域
本发明涉及复合基板的制造方法。
背景技术
以往,已知有出于改善特性的目的,在将支承基板与压电基板粘合在一起而得到的复合基板上设置电极,制作弹性波元件。此处的弹性波元件例如用作为手机等通信机器中的带通滤波器。此外,已知有复合基板使用铌酸锂或者钽酸锂作为压电基板,使用二氧化硅、石英或陶瓷作为支承基板(参见专利文献1)。
专利文献1:日本专利特开2006-319679号公报
发明内容
可是,这样的复合基板一般在将基板与基板粘合在一起之后,要经过弹性波元件的制造工序。例如,将热膨胀系数不同的基板粘合在一起得到的复合基板中,由于元件的制造工序中的温度(加热),有时基板发生翘曲等,而需要考虑使用针对所发生的翘曲的制造装置,或者采用调整降温时间等工序使翘曲不发生。此外,不能进行破坏粘结层或复合基板本身的加热工序,在制造工序上有各种限制。
本发明鉴于上述课题,主要目的在于提供一种复合基板的制造方法,该方法对于具有用粘结层将第1基板与第2基板粘合在一起的结构的复合基板,可以进一步减少制造工序中受到的限制。
为了达到上述主要目的,本发明人进行了仔细的研究,发现先在压电基板的表面形成元件构造部,再从背面侧对该压电基板进行磨削,然后,粘结支承基板,这样的话,可以在进一步减少制造工序中受到的限制的状态下制作复合基板,从而完成本发明。
也就是,本发明的复合基板的制造方法包括在第1基板的表面形成元件构造部的形成工序、固定所述第1基板对所述第1基板的背面进行磨削的磨削工序和用由粘结剂形成的粘结层将第2基板粘合在所述磨削过的背面的粘合工序。
发明效果
本发明的复合基板的制造方法可以进一步减少制造工序中受到的限制。其理由是例如在形成操作性受加热影响的粘结层之前、并且在对(由于加热)而强度下降的第1基板进行磨削之前,形成包含加热工序的元件构造部。
附图说明
图1是模式化地显示复合基板10的制造工序的一个例子的截面图;
图2是显示复合基板10以及弹性波元件30的概略结构的说明图。
具体实施方式
接下来,利用附图说明本发明的实施方式。图1是模式化地显示复合基板10的制造工序的一个例子的截面图,图2是显示复合基板10以及弹性波元件30的概略结构的说明图。本发明的复合基板的制造方法包括在第1基板的表面形成元件构造部的形成工序、固定第1基板对第1基板的背面进行磨削的磨削工序和用由粘结剂形成的粘结层将第2基板粘合在磨削过的背面的粘合工序。如图1的下半部分所示,本发明的复合基板10具备具有元件构造部31的第1基板12、第2基板14和粘结第1基板12和第2基板14的粘结层16。这样的复合基板除了将第1基板作为压电基板、将第2基板作为支承该压电基板的支承基板的弹性波元件用复合基板之外,还举例有将第1基板作为半导体基板、将第2基板作为支承基板的半导体元件用复合基板等。弹性波元件举例有例如弹性表面波元件或兰姆波(Lamb Wave)元件或者薄膜共振子(FBAR)等。
(形成工序)
在形成工序中,在第1基板12的表面11形成元件构造部31(图1的第1、2段)。在这里,元件构造部是指例如含有体现复合基板的元件功能的结构的构件。第1基板12举例有例如压电基板、半导体基板等。第1基板12为压电基板时,可以使用例如钽酸锂、铌酸锂、铌酸锂-钽酸锂固溶体单晶、硼酸锂、硅酸镓镧(Langasite)、水晶等的一种以上。此时,元件构造部31可以为例如弹性波元件用电极18等。又,元件构造部31的形成方法可以通过如下的一般的光刻技术进行,例如,喷溅电极材料,在第1基板12的表面11上形成金属膜,然后,涂布抗蚀剂,进行刻图,通过蚀刻工序,形成电极图案。例如,如图2所示,可以在压电基板上形成IDT(Interdigital Transducer)电极32、34(也称梳齿形电极、帘状电极)和反射电极36,使得形成多数的弹性波元件的集合体。又,第1电极12为半导体基板时,可以使用例如单晶硅、锗、镓砷、镓砷磷、氮化镓、碳化硅等的1种以上。此时,元件构造部31可以为例如半导体元件用电极18等。形成该元件构造部31时,可以进行导入杂质原子的处理、例如离子注入处理或高温工序即杂质扩散处理等。
(磨削工序)
磨削工序中,固定第1基板12,对该第1基板12的背面13进行磨削(图1的第3、4段)。例如可以将第1基板12翻过来,通过将模切带20粘在第1基板12的表面11上来固定第1基板12。如此,在固定第1基板12之后,可以将第1基板12夹在研磨定盘与压力板之间,向该第1基板12与研磨定盘之间供给含有研磨粒子的浆液,一边通过该压力板将第1基板12按压在定盘面上,一边让压力板自转运动,使厚度变薄。进行镜面研磨时,将衬垫粘合在研磨定盘的表面,同时将研磨粒子变更为粒度号高的,通过让压力板进行自转运动以及公转运动,可以对第1基板12的背面13进行镜面研磨。
(粘合工序)
粘合工序中,用由粘结剂形成粘结层16将第2基板14粘合在磨削过的背面13上。第2基板14可以作为例如支承第1基板12的支承基板。采用压电基板作为第1基板12时,例如支承基板可以使用硅制基板(Si(111)基板、Si(100)基板等)、玻璃基板、蓝宝石基板、Al2MgO4尖晶石基板等。该支承基板可以具有不同于压电基板的热膨胀系数,优选其热膨胀系数小于压电基板的。支承基板与压电基板的热膨胀系数之差可以在6ppm/K以上。即使热膨胀系数差在6ppm/K以上,也可以通过压电基板的形状,抑制由于加热可能产生的不良情况的发生。压电基板的热膨胀系数为13~20ppm/K时,该支承基板优选热膨胀系数为2~7ppm/K。复合基板10的第1基板为压电基板、第2基板为支承基板时,压电基板以及支承基板所用的具代表性的材质的热膨胀系数如表1所示。使用半导体基板作为第1基板12时,例如可以使用热导率高的SiC或者碳制材料作为支承基板。粘结层16优选由具有耐热性的有机粘结剂形成,例如可以使用环氧系粘结剂或者丙烯酸系粘结剂。可以例如通过旋涂法将粘结剂形成在第1基板12的背面13以及第2基板14的表面的至少之一上。通过粘结层16将第1基板12和第2基板14粘结之后,可以除去模切带20得到复合基板10,也可以就这样直接进行模切。进行模切的话,可以得到表面11形成有元件构造部31的若干个芯片。
表1
根据以上说明的复合基板的制造方法,可以进一步减少制造工序中受到的限制。例如通过粘结层将第1基板与第2基板粘结之后,对第1基板的表面进行磨削,使之变薄,在第1基板的表面形成元件构造部时,例如有必要进行与元件构造部的形成而伴生的加热等相对应的处理等,这在制造工序上,有时产生限制。而在本发明中,由于在形成操作性受加热影响的粘结层之前且对因加热而强度下降的第1基板进行磨削前,形成包含加热工序的元件构造部,所以粘结第2基板14之后的制造工序几乎不受限制。通过设定为用粘结层16粘结第2基板14的粘结结构,可以使之具有单一基板不能实现的功能。
另外,本发明并不被上述任何实施方式所限定,只要属于本发明的技术范围,各种方式都可以实施,这是很明显的。
实施例
以下,将具体制造复合基板的例子作为实施例进行说明。
[实施例1]
清洗厚度0.35mm的40Y-X LiTaO3基板(压电基板),然后,通过喷溅法作成厚度2400的Al膜。涂布阳性抗蚀剂,进行烘烤,然后转印电极图案。将经过显影工序的晶片放到反应性离子蚀刻(RIE)装置,使用氯系气体进行Al电极的蚀刻。如此周期性地形成4μm宽的梳齿形电极,在整个晶片上作成单端弹性表面波(SAW)共振元件。为了保护元件,再在晶片上涂布抗蚀剂。将该基板粘合在模切带上,使得元件侧为下表面,使用研磨装置对基板进行磨削到厚度为40μm。为了除去加工时的磨削残渣,对磨削面侧进行擦洗。接着,在厚度0.22mm的Si(111)支承基板上涂布薄薄的粘结剂,将薄片化了的LiTaO3基板粘合在其上,暂时进行固化。此刻将晶片从模切带上剥离,进行有机清洗以除去保护蚀刻膜。然后,在洁净的烘箱中将整个基板加热到200℃,使粘结剂固化。测定如此作成的SAW元件的频率特性,结果显示出与在单一基板上作成时完全同等的特性。再调查共振频率的温度特性,将压电基板粘合在支承基板上,对压电基板的表面进行磨削,在该磨削过的表面上形成电极,这样得到的元件为-40ppm/K,而使用本制造方法得到的粘结基板上的元件提高至-25ppm/K。
[实施例2]
准备厚度0.25mm的15Y切割规格的LiNbO3基板作为压电基板。在通过有机溶剂以及纯水清洗过的基板表面旋涂大约4000厚度的抗蚀剂。在80℃的加热板上对晶片加热2分钟,使抗蚀剂固化。通过i线对准器将光掩膜的图案转印到抗蚀剂上,然后进行显影。将晶片设置在真空蒸镀装置上,形成2000厚度的铝膜。将晶片浸渍在抗蚀剂剥离液,将抗蚀剂以及不需要的铝膜剥离,形成SAW过滤器图案。出于保护SAW过滤器图案在磨削工序中免受损伤的目的,在形成有SAW过滤器图案的表面上旋涂抗蚀剂,与上述一样地进行加热固化。在另外准备的LiNbO3生晶片(支撑基板)和有图案的晶片的抗蚀剂面上涂布蜡,将两者粘结。此时蜡的厚度大约为20μm。将粘结的晶片放置在研磨机上,使有图案的晶片的背面朝上,进行磨削到其厚度为25μm。接着,使用精密研磨机对其表面进行抛光至厚度为20μm。在另外准备的玻璃基板(支承基板)上涂布薄薄的粘结剂,将上述粘结晶片的研磨面粘合于其上并进行压接,将该组合晶片投入烘箱中,加热至200℃,结果蜡溶解,可以取下先前的支撑基板。另一玻璃基板由于粘结剂在高温下固化,与薄膜化的LiNbO3基板强固地粘结,可以作成复合基板。
[实施例3~5]
除了将压电基板设定为64Y-X LiNbO3基板、将支承基板设定为Si(100)基板之外,经过与实施例2一样的工序,得到复合基板,将该复合基板作为实施例3。此外,除了将压电基板设定为46.3Y-X LiNbO3基板、将支承基板设定为蓝宝石基板之外,经过与实施例2一样的工序,得到复合基板,将该复合基板作为实施例4。此外,除了将压电基板设定为4Y-X LiTaO3基板、将支承基板设定为Al2MgO4尖晶石基板之外,经过与实施例2一样的工序,得到复合基板,将该复合基板作为实施例5。制作中使用的压电基板和支承基板的组合示于表2。由此可知,可以使用实施例1~5的各种压电基板以及支承基板,通过本发明的制造方法,制作复合基板。
表2
压电基板 | 支承基板 | |
实施例1 | 40Y-X LiTaO3 | Si(111)基板 |
实施例2 | 15Y-X LiNbO3 | 玻璃基板 |
实施例3 | 64Y-X LiNbO3 | Si(100)基板 |
实施例4 | 46.3Y-X LiTaO3 | 蓝宝石基板 |
实施例5 | 4Y-X LiNbO3 | Al2MgO4尖晶石基板 |
符号说明
10复合基板 11表面 12第1基板 13背面 14第2基板 16粘结层 18电极20模切带 30弹性波元件 31元件构造部 32、34IDT电极 36反射电极
Claims (4)
1.一种复合基板的制造方法,包括:
形成工序,在第1基板的表面形成元件构造部;
磨削工序,固定所述第1基板,对所述第1基板的背面进行磨削;和
粘合工序,用由粘结剂形成的粘结层将第2基板粘合在所述磨削过的所述第1基板的背面。
2.如权利要求1所述的复合基板的制造方法,
在所述形成工序中,采用压电基板作为所述第1基板,
在所述粘合工序中,采用支承所述压电基板的支承基板作为所述第2基板。
3.如权利要求2所述的复合基板的制造方法,在所述形成工序中,在所述第1基板的表面形成作为所述元件构造部的弹性波元件用电极。
4.如权利要求2或3所述的复合基板的制造方法,所述支承基板的热膨胀系数小于所述压电基板的热膨胀系数。
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