CN101997065B - Packaging structure of light emitting diode - Google Patents
Packaging structure of light emitting diode Download PDFInfo
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- CN101997065B CN101997065B CN200910166270A CN200910166270A CN101997065B CN 101997065 B CN101997065 B CN 101997065B CN 200910166270 A CN200910166270 A CN 200910166270A CN 200910166270 A CN200910166270 A CN 200910166270A CN 101997065 B CN101997065 B CN 101997065B
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- emitting diode
- encapsulating structure
- conductive layer
- backlight unit
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Abstract
The invention is suitable for the field of a light emitting diode packaging technique, providing the packaging structure of a light emitting diode, which comprises a substrate, a light transmitting layer arranged on the substrate, a light emitting diode chip arranged on the light transmitting layer, and an adhesive layer formed between the light transmitting layer and the light emitting diode chip, wherein the adhesive layer bonds the light emitting diode chip to the light transmitting layer; and the light transmitting layer is arranged between the light emitting diode chip and the substrate so as to enhance the relative distance of the light emitting diode chip and the substrate. The light removing efficiency of the whole packaging structure is enhanced through the long relative distance and the light transmitting capability of the light transmitting layer; and in addition, the light transmitting layer has good heat conductivity and cannot seriously influence the heat dissipation efficiency of the light emitting diode.
Description
Technical field
The invention belongs to the light-emitting diode packaging technology field, relate in particular to a kind of encapsulating structure of light-emitting diode.
Background technology
At present; Traditional light-emitting diode (LED; Light emitting diode) little because of volume, power consumption is low, long service life, replaces conventional bulb gradually, used widely on traffic lights livery, directing light of automobile, flashlight, mobile phone, light fixture and large-scale outdoor billboard.The light that how to promote light-emitting diode takes out efficient, to enlarge its application category, is to demand the technology that develops at present urgently.The packaged type that prior art provides is with behind the LED substrate thinning, Gu brilliant on lead frame, printed circuit board (PCB), silicon substrate or metal substrate, then carry out routing and sealing step again.Because general crystal-bonding adhesive layer thickness is thin, the photon of institute's pedestal direction emission in the past is difficult for taking-up; If thickening crystal-bonding adhesive layer thickness, but the low thermal conductance coefficient of the crystal layer heat dissipation problem of deriving admittedly then, therefore most of projection all can't effectively be taken out, and then have influence on the light output efficiency of LED toward the incident light of orientation substrate.
In addition, see also Fig. 1, the sketch map of the LED packaged type that it provides for prior art.Among the figure; LED sees through a crystal-bonding adhesive layer 12 solid crystalline substance on a lead frame 11 through light-emitting diode chip for backlight unit 13; The routing that on first electrode 131 on the light-emitting diode chip for backlight unit 13 and second electrode 132, electrically connects again and the encapsulation of light-emitting diode chip for backlight unit 13 etc. are to accomplish the encapsulation procedure of LED.This lead frame 11 can be printed circuit board (PCB), silicon substrate or metal substrate.Light-emitting diode chip for backlight unit 13 comprises a luminescent layer 133, and this luminescent layer 133 is in order to send a light source 14.Because the thickness of crystal-bonding adhesive layer 12 is quite thin,, cause the brightness of light-emitting diode chip for backlight unit 13 to descend so after the light source 14 that luminescent layer 133 is set out reflects via pedestal 21, covered by light-emitting diode chip for backlight unit 13, or absorbed by the substrate of light-emitting diode chip for backlight unit 13.
Summary of the invention
The purpose of the embodiment of the invention is to provide a kind of encapsulating structure that light takes out the light-emitting diode of efficient that improves, and the encapsulating structure light that is intended to solve the light-emitting diode that prior art provides takes out the not good problem of efficient.
The embodiment of the invention is achieved in that a kind of encapsulating structure of light-emitting diode, and the encapsulating structure of said light-emitting diode comprises:
One pedestal;
Be arranged at the photic zone on the said pedestal;
Be arranged at the light-emitting diode chip for backlight unit on the said photic zone; And
One adhesion layer, it is formed between said photic zone and the said light-emitting diode chip for backlight unit, and said adhesion layer is solid brilliant on said photic zone with said light-emitting diode chip for backlight unit.
The embodiment of the invention also provides a kind of encapsulating structure of light-emitting diode, and the encapsulating structure of said light-emitting diode comprises:
One metal substrate;
Be arranged at the light transmission conductive layer on the said metal substrate;
Be arranged at the light-emitting diode chip for backlight unit on the said light transmission conductive layer; And
One sticks together conductive layer, and it is arranged between said light transmission conductive layer and the said light-emitting diode chip for backlight unit, and the said conduction series of strata of sticking together are solid brilliant on said light transmission conductive layer with said light-emitting diode chip for backlight unit.
Hold the above, the encapsulating structure of the light-emitting diode that the embodiment of the invention provides, it can have one or more following advantages:
(1) encapsulating structure of this light-emitting diode can increase the relative distance of light-emitting diode chip for backlight unit and pedestal through photic zone, improves the whole light of encapsulating structure and takes out efficient.
(2) encapsulating structure of this light-emitting diode can pass through euphotic light transmission features, allows the photon that light-emitting diode chip for backlight unit sent to appear from the photic zone sidewall, improves the brightness of light-emitting diode chip for backlight unit.
(3) encapsulating structure of this light-emitting diode can pass through the good thermal conductivity of photic zone; The radiating efficiency that makes light-emitting diode chip for backlight unit is not because of the relative distance of light-emitting diode chip for backlight unit and pedestal increases, and the shortcoming that the serious life-span shortens or brightness is lowered of generation light-emitting diode.
Description of drawings
The sketch map of the LED packaged type that Fig. 1 provides for prior art;
The encapsulating structure sketch map of the light-emitting diode that Fig. 2 provides for first embodiment of the invention;
Fig. 3 for second embodiment of the invention provide the encapsulating structure sketch map of light-emitting diode;
Fig. 4 for third embodiment of the invention provide the encapsulating structure sketch map of light-emitting diode;
Fig. 5 for fourth embodiment of the invention provide the encapsulating structure sketch map of light-emitting diode;
The first photic zone structure chart of the encapsulating structure of the light-emitting diode that Fig. 6 provides for the embodiment of the invention;
The second photic zone structure chart of the encapsulating structure of the light-emitting diode that Fig. 7 provides for the embodiment of the invention.
Embodiment
In order to make the object of the invention, technical scheme and advantage clearer,, the present invention is further elaborated below in conjunction with accompanying drawing and embodiment.Should be appreciated that specific embodiment described herein only in order to explanation the present invention, and be not used in qualification the present invention.
See also Fig. 2, the encapsulating structure sketch map of the light-emitting diode that it provides for first embodiment of the invention.Among the figure, the encapsulating structure of light-emitting diode comprises pedestal 21, photic zone 22, light-emitting diode chip for backlight unit 23 and adhesion layer 24.Photic zone 22 is arranged on the pedestal 21, and light-emitting diode chip for backlight unit 23 is arranged on the photic zone 22, and adhesion layer 24 is formed between photic zone 22 and the light-emitting diode chip for backlight unit 23, and adhesion layer 24 is solid brilliant on photic zone 22 with light-emitting diode chip for backlight unit 23.
The top of light-emitting diode chip for backlight unit is provided with first electrode 231 and second electrode 232, then proceeds the routing of first electrode 231 and second electrode 232, makes first electrode 231 and second electrode 232 respectively connect a lead (figure does not show) to import an electric current.
Accomplish the encapsulation procedure of light-emitting diode chip for backlight unit 23 at last.Between photic zone 22 and the pedestal 21 colloid 25 is set further, this colloid 25 makes photic zone 22 stick on the pedestal 21.Note that photic zone 22 also can directly be deposited on the pedestal 21, or directly coat on the substrate 21, and do not utilize colloid 25 to stick on the pedestal 21, so the mode of connection of photic zone 22 and pedestal 21 comprises but is not limited to the mode that present embodiment proposes among the present invention.
In addition, the mode of photic zone 22 depositions then can see through standard exposure developing technique, local deposits technology etc., directly deposition photic zone 22 in the presumptive area of pedestal 21.Wherein, pedestal 21 is a lead frame, printed circuit board (PCB), silicon substrate, transparency carrier or metal substrate.21 of pedestals are formed by metal, semiconductor, pottery, plastics or glass.
Light-emitting diode chip for backlight unit 23 has luminescent layer 233, and this luminescent layer 233 sends light source 234.Photic zone 22 increases both relative distance of light-emitting diode chip for backlight unit 23 and pedestal 21, makes light source 234 after pedestal 21 reflections, is easy to be emitted to the outside.In addition, photic zone 22 is formed by the light transmissive material that comprises zinc oxide (ZnO), comprises but is not limited to zinc oxide (ZnO), indium zinc oxide (InZnO), zinc-gallium oxide (GaZnO) and zinc oxide aluminum (AlZnO).Photic zone 22 can be a single layer structure or a sandwich construction.Photic zone 22 has good light transmittance, to improve the light extraction efficiency of light-emitting diode chip for backlight unit 23.
Moreover, comprise the good thermal conductivity of photic zone 22 of zinc oxide (ZnO), make the light-emitting diode chip for backlight unit 23 and the relative distance of pedestal 21 possess the increasable degree of freedom.So light-emitting diode chip for backlight unit 23 is the relative distance because of increasing not, and produce the shortcoming of the brightness attenuating or the lost of life.What deserves to be mentioned is that the thickness of photic zone 22 is the wavelength of corresponding light source 234 then, so the thickness of photic zone 22 can be adjusted because of the wavelength of light source 234.
Please then consult Fig. 3, the encapsulating structure sketch map of the light-emitting diode that it provides for second embodiment of the invention.Among the figure, the encapsulating structure of light-emitting diode comprises pedestal 21, photic zone 22, light-emitting diode chip for backlight unit 23 and adhesion layer 24.Photic zone 22 is arranged on the pedestal 21, and light-emitting diode chip for backlight unit 23 is arranged on the photic zone 22, and adhesion layer 24 is formed at photic zone 22 and light-emitting diode chip for backlight unit 23 23, and adhesion layer 24 is solid brilliant on photic zone 22 with light-emitting diode chip for backlight unit 23.The top of light-emitting diode chip for backlight unit 23 is provided with first electrode 231 and second electrode 232, then proceeds the routing of first electrode 231 and second electrode 232, makes first electrode 231 and second electrode 232 respectively connect a lead to import an electric current.Accomplish the encapsulation procedure of light-emitting diode chip for backlight unit 23 at last.Pedestal 21 can see through Direct Electroplating; Or method such as first plated metal thin layer re-plating; Side deposition at photic zone 22; With light-emitting diode chip for backlight unit 23 solid brilliant opposite sides, then accomplish again in the encapsulation procedure of first electrode 231 and second electrode, 232 routings and light-emitting diode chip for backlight unit 23 at photic zone 22.
Wherein, pedestal 21 is a lead frame, printed circuit board (PCB), silicon substrate, transparency carrier or metal substrate.21 of pedestals are formed by metal, semiconductor, pottery, plastics or glass.Photic zone 22 is to be formed by the light transmissive material that comprises zinc oxide (ZnO), comprises but is not limited to zinc oxide (ZnO), indium zinc oxide (InZnO), zinc-gallium oxide (GaZnO) and zinc oxide aluminum (AlZnO).
See also Fig. 4, the encapsulating structure sketch map of the light-emitting diode that it provides for third embodiment of the invention.Among the figure, the encapsulating structure of light-emitting diode has metal substrate 31, light transmission conductive layer 32, light-emitting diode chip for backlight unit 33 and sticks together conductive layer 34.Light transmission conductive layer 32 is arranged on the metal substrate 31; Light-emitting diode chip for backlight unit 33 is arranged on the light transmission conductive layer 32; Stick together conductive layer 34 and be arranged between light transmission conductive layer 32 and the light-emitting diode chip for backlight unit 33, it is solid brilliant on light transmission conductive layer 32 with light-emitting diode chip for backlight unit 33 that this sticks together conductive layer 34.The top of light-emitting diode chip for backlight unit 23 is provided with first electrode, 331, the first electrodes 331 and connects a lead (figure does not show) to import an electric current.Between light transmission conductive layer 32 and the metal substrate 31 colloid 35 is set further, this colloid 35 sticks on the metal substrate 31 light transmission conductive layer 32.Please note; Light transmission conductive layer 32 also can directly be deposited on the metal substrate 31 or coat on the metal substrate 31; And do not utilize colloid 35 to stick on the metal substrate 31, so the mode of connection of light transmission conductive layer 32 and metal substrate 31 comprises but is not limited to the mode that present embodiment proposes among the present invention.
In addition, the mode of light transmission conductive layer 32 depositions then can see through standard exposure developing technique, local deposits technology etc., directly deposition light transmission conductive layer 32 in the presumptive area of metal substrate 31.Light transmission conductive layer 32 is formed by the light transmissive material that comprises zinc oxide (ZnO), and it comprises but is not limited to zinc oxide (ZnO), indium zinc oxide (InZnO), zinc-gallium oxide (GaZnO) and zinc oxide aluminum (AlZnO).But this light transmission conductive layer 32 more adulterated al (Al) or gallium (Ga) so that light transmission conductive layer 32 possesses good electrical conductivity.Metal substrate 31 materials are nickel (Ni), copper (Cu) or comprise both or the alloy of any one.
Light-emitting diode chip for backlight unit 33 has luminescent layer 332, and this luminescent layer 332 is in order to send light source 333.Light transmission conductive layer 32 increases both relative distance of light-emitting diode chip for backlight unit 33 and metal substrate 31, makes light source 333 after metal substrate 31 reflections, is easy to be emitted to the encapsulating structure outside.Light transmission conductive layer 32 has good light transmittance, to improve the light extraction efficiency of light-emitting diode chip for backlight unit 33.
Moreover, comprise the good thermal conductivity of light transmission conductive layer 32 of zinc oxide (ZnO), make the light-emitting diode chip for backlight unit 33 and the relative distance of metal substrate 31 possess the increasable degree of freedom.Event light-emitting diode chip for backlight unit 33 is the relative distance because of increasing not, and brightness is lowered or Yin Wendu is too high and the shortcoming of generation light-emitting diode chip for backlight unit 33 losts of life and produce.What deserves to be mentioned is that the thickness of light transmission conductive layer 32 is the wavelength of corresponding light source 333 then, so the thickness of light transmission conductive layer 32 can be adjusted because of the wavelength of light source 333.
See also Fig. 5, the encapsulating structure sketch map of the light-emitting diode that it provides for fourth embodiment of the invention.Among the figure, the encapsulating structure of light-emitting diode has metal substrate 31, light transmission conductive layer 32, light-emitting diode chip for backlight unit 33 and sticks together conductive layer 34.Light transmission conductive layer 32 is arranged on the metal substrate 31; Light-emitting diode chip for backlight unit 33 is arranged on the light transmission conductive layer 32; Stick together conductive layer 34 and be arranged between light transmission conductive layer 32 and the light-emitting diode chip for backlight unit 33, it is solid brilliant on light transmission conductive layer 32 with light-emitting diode chip for backlight unit 33 that this sticks together conductive layer 34.The top of light-emitting diode chip for backlight unit 23 is provided with first electrode, 331, the first electrodes 331 and connects a lead (figure does not show) to import an electric current.Metal substrate 31 can see through Direct Electroplating; Or method such as first plated metal thin layer re-plating; Side deposition in light transmission conductive layer 32; With light-emitting diode chip for backlight unit 33 solid brilliant opposite sides, then accomplish again in the encapsulation procedure of first electrode, 331 routings and light-emitting diode chip for backlight unit 33 in light transmission conductive layer 32.
Wherein, light transmission conductive layer 32 is formed by the light transmissive material that comprises zinc oxide (ZnO), and it comprises but is not limited to zinc oxide (ZnO), indium zinc oxide (InZnO), zinc-gallium oxide (GaZnO) and zinc oxide aluminum (AlZnO).But this light transmission conductive layer 32 more adulterated al (Al) or gallium (Ga) so that light transmission conductive layer 32 possesses good electrical conductivity.Metal substrate 31 materials are nickel (Ni), copper (Cu) or comprise both or the alloy of any one.Metal substrate 31 is a lead frame, printed circuit board (PCB), silicon substrate, transparency carrier or metal substrate.Metal substrate 31 can be formed by metal, semiconductor, pottery, plastics or glass.
See also Fig. 6, the first photic zone structure chart of the encapsulating structure of the light-emitting diode that it provides for the embodiment of the invention.Among the figure, photic zone 43 is formed on the pedestal 41, and 41 colloids 42 capable of using of this photic zone 43 and pedestal firmly link photic zone 43 and pedestal 41.The one or both sides of the encapsulating structure of light-emitting diode proposed by the invention carry out roughening, and utilize photic zone 43 coarse surfaces to improve the light extraction efficiency of light-emitting diode.Pedestal 41 can be a lead frame, printed circuit board (PCB), silicon substrate, transparency carrier or metal substrate.What deserves to be mentioned is that photic zone 43 can make it have conductivity via adulterated al (Al) or gallium materials such as (Ga).Colloid 42 also can have conductivity.
See also Fig. 7, the second photic zone structure chart of the encapsulating structure of the light-emitting diode that it provides for the embodiment of the invention.Among the figure, photic zone 43 is formed on the pedestal 41, and 41 colloids 42 capable of using of this photic zone 43 and pedestal firmly link photic zone 43 and pedestal 41.The encapsulating structure of light-emitting diode proposed by the invention is made the inclined plane in the side of photic zone 43, makes more that multiple light courcess reflexes to outside the encapsulating structure, improves light extraction efficiency.Pedestal 41 can be a lead frame, printed circuit board (PCB), silicon substrate, transparency carrier or metal substrate.What deserves to be mentioned is that photic zone 43 can make it have conductivity via adulterated al (Al) or gallium (Ga) or indium materials such as (In).Colloid 42 also can have conductivity.
The above is merely preferred embodiment of the present invention, not in order to restriction the present invention, all interior any modifications of doing in spirit of the present invention and principle, is equal to and replaces and improvement etc., all should be included in protection scope of the present invention in.
Claims (25)
1. the encapsulating structure of a light-emitting diode is characterized in that, the encapsulating structure of said light-emitting diode comprises:
One pedestal;
Be arranged at the photic zone on the said pedestal;
Be arranged at the light-emitting diode chip for backlight unit on the said photic zone; And
One adhesion layer, it is formed between said photic zone and the said light-emitting diode chip for backlight unit, and said adhesion layer is solid brilliant on said photic zone with said light-emitting diode chip for backlight unit.
2. the encapsulating structure of light-emitting diode as claimed in claim 1 is characterized in that, the top of said light-emitting diode chip for backlight unit is provided with first electrode and second electrode.
3. the encapsulating structure of light-emitting diode as claimed in claim 2 is characterized in that, said first electrode and second electrode connect a lead respectively to import an electric current.
4. the encapsulating structure of light-emitting diode as claimed in claim 1 is characterized in that, colloid further is set between said photic zone and the pedestal, and said colloid is that said photic zone is sticked on the said pedestal.
5. the encapsulating structure of light-emitting diode as claimed in claim 1 is characterized in that, said photic zone is deposited on the said pedestal.
6. the encapsulating structure of light-emitting diode as claimed in claim 1 is characterized in that, said pedestal and said photic zone are chimeric each other.
7. the encapsulating structure of light-emitting diode as claimed in claim 1 is characterized in that, said photic zone is single layer structure or sandwich construction.
8. the encapsulating structure of light-emitting diode as claimed in claim 1 is characterized in that, said photic zone is formed by the light transmissive material that contains zinc oxide.
9. the encapsulating structure of light-emitting diode as claimed in claim 1 is characterized in that, further forms a reflector between said photic zone and the pedestal.
10. the encapsulating structure of light-emitting diode as claimed in claim 9 is characterized in that, said reflector has a Bragg reflection structure, and said Bragg reflection structure is the reflection light source that said light-emitting diode chip for backlight unit sent.
11. the encapsulating structure of light-emitting diode as claimed in claim 1 is characterized in that, said photic zone has at least one sloped sidewall.
12. the encapsulating structure of light-emitting diode as claimed in claim 1 is characterized in that, a said euphotic side or bilateral have a rough surface.
13. the encapsulating structure of a light-emitting diode is characterized in that, it comprises the encapsulating structure of said light-emitting diode:
One metal substrate;
Be arranged at the light transmission conductive layer on the said metal substrate;
Be arranged at the light-emitting diode chip for backlight unit on the said light transmission conductive layer; And
One sticks together conductive layer, and it is arranged between said light transmission conductive layer and the said light-emitting diode chip for backlight unit, and the said conduction series of strata of sticking together are solid brilliant on said light transmission conductive layer with said light-emitting diode chip for backlight unit.
14. the encapsulating structure of light-emitting diode as claimed in claim 13 is characterized in that, the top of said light-emitting diode chip for backlight unit is provided with first electrode.
15. the encapsulating structure of light-emitting diode as claimed in claim 14 is characterized in that, said first electrode connects a lead to import an electric current.
16. the encapsulating structure of light-emitting diode as claimed in claim 13 is characterized in that, between said light transmission conductive layer and the said metal substrate colloid is set further, said colloid is that said light transmission conductive layer is sticked on the said metal substrate.
17. the encapsulating structure of light-emitting diode as claimed in claim 13 is characterized in that, said metal substrate and said light transmission conductive layer are chimeric each other.
18. the encapsulating structure of light-emitting diode as claimed in claim 13 is characterized in that, said light transmission conductive layer is single layer structure or sandwich construction.
19. the encapsulating structure of light-emitting diode as claimed in claim 13 is characterized in that, said light transmission conductive layer is formed by the light transmissive material that comprises zinc oxide.
20. the encapsulating structure of light-emitting diode as claimed in claim 13 is characterized in that, further forms a reflector between said light transmission conductive layer and the said metal substrate.
21. the encapsulating structure of light-emitting diode as claimed in claim 20 is characterized in that, said reflector has a Bragg reflection structure, and said Bragg reflection structure is the reflection light source that said light-emitting diode chip for backlight unit sent.
22. the encapsulating structure of light-emitting diode as claimed in claim 13 is characterized in that, said light transmission conductive layer has at least one sloped sidewall.
23. the encapsulating structure of light-emitting diode as claimed in claim 13 is characterized in that, a side or the bilateral of said light transmission conductive layer have a rough surface.
24. the encapsulating structure of light-emitting diode as claimed in claim 13 is characterized in that, said metal substrate is single-layer metal or multi-layer metal structure.
25. the encapsulating structure of light-emitting diode as claimed in claim 13 is characterized in that, said metal substrate is formed by the metal material that comprises nickel or copper.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN200910166270A CN101997065B (en) | 2009-08-14 | 2009-08-14 | Packaging structure of light emitting diode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN200910166270A CN101997065B (en) | 2009-08-14 | 2009-08-14 | Packaging structure of light emitting diode |
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| Publication Number | Publication Date |
|---|---|
| CN101997065A CN101997065A (en) | 2011-03-30 |
| CN101997065B true CN101997065B (en) | 2012-09-05 |
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| CN200910166270A Expired - Fee Related CN101997065B (en) | 2009-08-14 | 2009-08-14 | Packaging structure of light emitting diode |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| TWI495163B (en) * | 2011-12-09 | 2015-08-01 | Chunghwa Telecom Co Ltd | A method for manufacturing a resonant cavity light emitting diode |
| CN109830500A (en) * | 2019-02-03 | 2019-05-31 | 泉州三安半导体科技有限公司 | Light emitting device |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1403933A2 (en) * | 2002-09-30 | 2004-03-31 | Kabushiki Kaisha Toshiba | Semiconductor light emitting diode |
| CN101379623A (en) * | 2005-12-22 | 2009-03-04 | 昭和电工株式会社 | Light-emitting diode and method for fabricant thereof |
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2009
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Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1403933A2 (en) * | 2002-09-30 | 2004-03-31 | Kabushiki Kaisha Toshiba | Semiconductor light emitting diode |
| CN101379623A (en) * | 2005-12-22 | 2009-03-04 | 昭和电工株式会社 | Light-emitting diode and method for fabricant thereof |
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