CN101990706A - 晶圆测试装置以及具有该装置的处理设备 - Google Patents

晶圆测试装置以及具有该装置的处理设备 Download PDF

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Publication number
CN101990706A
CN101990706A CN2008801285260A CN200880128526A CN101990706A CN 101990706 A CN101990706 A CN 101990706A CN 2008801285260 A CN2008801285260 A CN 2008801285260A CN 200880128526 A CN200880128526 A CN 200880128526A CN 101990706 A CN101990706 A CN 101990706A
Authority
CN
China
Prior art keywords
wafer
light
space
outgoing portion
crackle
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN2008801285260A
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English (en)
Chinese (zh)
Inventor
李淳钟
禹奉周
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semisysco Co Ltd
Original Assignee
Semisysco Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semisysco Co Ltd filed Critical Semisysco Co Ltd
Publication of CN101990706A publication Critical patent/CN101990706A/zh
Pending legal-status Critical Current

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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/9501—Semiconductor wafers
    • G01N21/9505—Wafer internal defects, e.g. microcracks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/9501—Semiconductor wafers
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/9501—Semiconductor wafers
    • G01N21/9503—Wafer edge inspection
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Biochemistry (AREA)
  • Pathology (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Immunology (AREA)
  • Analytical Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • General Health & Medical Sciences (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Nonlinear Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Optics & Photonics (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
CN2008801285260A 2008-04-08 2008-05-19 晶圆测试装置以及具有该装置的处理设备 Pending CN101990706A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
KR10-2008-0032868 2008-04-08
KR20080032868 2008-04-08
PCT/KR2008/002795 WO2009125896A1 (en) 2008-04-08 2008-05-19 Wafer testing apparatus and processing equipment having the same

Publications (1)

Publication Number Publication Date
CN101990706A true CN101990706A (zh) 2011-03-23

Family

ID=41162024

Family Applications (1)

Application Number Title Priority Date Filing Date
CN2008801285260A Pending CN101990706A (zh) 2008-04-08 2008-05-19 晶圆测试装置以及具有该装置的处理设备

Country Status (4)

Country Link
KR (1) KR101060712B1 (ko)
CN (1) CN101990706A (ko)
TW (1) TWI388021B (ko)
WO (1) WO2009125896A1 (ko)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103972126A (zh) * 2014-05-21 2014-08-06 上海华力微电子有限公司 预防硅片破片的方法

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102009050711A1 (de) 2009-10-26 2011-05-05 Schott Ag Verfahren und Vorrichtung zur Detektion von Rissen in Halbleitersubstraten
KR102044788B1 (ko) * 2012-10-30 2019-11-18 삼성디스플레이 주식회사 글라스 기판 검사 장치
KR101514031B1 (ko) * 2014-04-28 2015-04-22 이성수 실드박스
WO2015168282A1 (en) * 2014-04-29 2015-11-05 Pleotint, L.L.C. Absorbing solar control interlayers
WO2016162406A1 (de) * 2015-04-07 2016-10-13 Albert-Ludwigs-Universität Freiburg Vorrichtung zum detektieren von elektronischen defekten im randbereich von halbleitern auf silizium-basis
KR101990639B1 (ko) * 2017-11-08 2019-06-18 주식회사 테스 기판검사방법 및 기판처리장치
BR112021011472A2 (pt) * 2019-02-28 2021-08-31 Yoshino Gypsum Co., Ltd. Aparelho para inspecionar corpos em forma de placa

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20020046829A (ko) * 2000-12-15 2002-06-21 윤종용 웨이퍼 검사 장치
KR100445457B1 (ko) * 2002-02-25 2004-08-21 삼성전자주식회사 웨이퍼 후면 검사 장치 및 검사 방법
KR100596048B1 (ko) * 2002-07-08 2006-07-03 삼성코닝정밀유리 주식회사 유리기판의 에지 검사시스템
JP4298238B2 (ja) * 2002-08-27 2009-07-15 大日本スクリーン製造株式会社 基板処理装置および基板処理システム
US7366344B2 (en) 2003-07-14 2008-04-29 Rudolph Technologies, Inc. Edge normal process
US7968859B2 (en) 2003-07-28 2011-06-28 Lsi Corporation Wafer edge defect inspection using captured image analysis

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103972126A (zh) * 2014-05-21 2014-08-06 上海华力微电子有限公司 预防硅片破片的方法

Also Published As

Publication number Publication date
KR20090107400A (ko) 2009-10-13
TW200943447A (en) 2009-10-16
TWI388021B (zh) 2013-03-01
WO2009125896A1 (en) 2009-10-15
KR101060712B1 (ko) 2011-08-30

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WD01 Invention patent application deemed withdrawn after publication

Application publication date: 20110323