CN101982515B - Film-like circuit connecting material and connection structure for circuit member - Google Patents

Film-like circuit connecting material and connection structure for circuit member Download PDF

Info

Publication number
CN101982515B
CN101982515B CN2010105189647A CN201010518964A CN101982515B CN 101982515 B CN101982515 B CN 101982515B CN 2010105189647 A CN2010105189647 A CN 2010105189647A CN 201010518964 A CN201010518964 A CN 201010518964A CN 101982515 B CN101982515 B CN 101982515B
Authority
CN
China
Prior art keywords
circuit
connection material
compound
membranaceous
circuit connection
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN2010105189647A
Other languages
Chinese (zh)
Other versions
CN101982515A (en
Inventor
望月日臣
有福征宏
小岛和良
小林宏治
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Lishennoco Co ltd
Original Assignee
Hitachi Chemical Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Chemical Co Ltd filed Critical Hitachi Chemical Co Ltd
Publication of CN101982515A publication Critical patent/CN101982515A/en
Application granted granted Critical
Publication of CN101982515B publication Critical patent/CN101982515B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09JADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J5/00Adhesive processes in general; Adhesive processes not provided for elsewhere, e.g. relating to primers
    • C09J5/06Adhesive processes in general; Adhesive processes not provided for elsewhere, e.g. relating to primers involving heating of the applied adhesive
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09JADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J4/00Adhesives based on organic non-macromolecular compounds having at least one polymerisable carbon-to-carbon unsaturated bond ; adhesives, based on monomers of macromolecular compounds of groups C09J183/00 - C09J183/16
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08GMACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G18/00Polymeric products of isocyanates or isothiocyanates
    • C08G18/06Polymeric products of isocyanates or isothiocyanates with compounds having active hydrogen
    • C08G18/08Processes
    • C08G18/10Prepolymer processes involving reaction of isocyanates or isothiocyanates with compounds having active hydrogen in a first reaction step
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08GMACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G18/00Polymeric products of isocyanates or isothiocyanates
    • C08G18/06Polymeric products of isocyanates or isothiocyanates with compounds having active hydrogen
    • C08G18/28Polymeric products of isocyanates or isothiocyanates with compounds having active hydrogen characterised by the compounds used containing active hydrogen
    • C08G18/40High-molecular-weight compounds
    • C08G18/42Polycondensates having carboxylic or carbonic ester groups in the main chain
    • C08G18/4205Polycondensates having carboxylic or carbonic ester groups in the main chain containing cyclic groups
    • C08G18/4208Polycondensates having carboxylic or carbonic ester groups in the main chain containing cyclic groups containing aromatic groups
    • C08G18/4211Polycondensates having carboxylic or carbonic ester groups in the main chain containing cyclic groups containing aromatic groups derived from aromatic dicarboxylic acids and dialcohols
    • C08G18/4213Polycondensates having carboxylic or carbonic ester groups in the main chain containing cyclic groups containing aromatic groups derived from aromatic dicarboxylic acids and dialcohols from terephthalic acid and dialcohols
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08GMACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G18/00Polymeric products of isocyanates or isothiocyanates
    • C08G18/06Polymeric products of isocyanates or isothiocyanates with compounds having active hydrogen
    • C08G18/28Polymeric products of isocyanates or isothiocyanates with compounds having active hydrogen characterised by the compounds used containing active hydrogen
    • C08G18/40High-molecular-weight compounds
    • C08G18/42Polycondensates having carboxylic or carbonic ester groups in the main chain
    • C08G18/4266Polycondensates having carboxylic or carbonic ester groups in the main chain prepared from hydroxycarboxylic acids and/or lactones
    • C08G18/4269Lactones
    • C08G18/4277Caprolactone and/or substituted caprolactone
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08GMACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G18/00Polymeric products of isocyanates or isothiocyanates
    • C08G18/06Polymeric products of isocyanates or isothiocyanates with compounds having active hydrogen
    • C08G18/28Polymeric products of isocyanates or isothiocyanates with compounds having active hydrogen characterised by the compounds used containing active hydrogen
    • C08G18/67Unsaturated compounds having active hydrogen
    • C08G18/671Unsaturated compounds having only one group containing active hydrogen
    • C08G18/672Esters of acrylic or alkyl acrylic acid having only one group containing active hydrogen
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08GMACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G18/00Polymeric products of isocyanates or isothiocyanates
    • C08G18/06Polymeric products of isocyanates or isothiocyanates with compounds having active hydrogen
    • C08G18/70Polymeric products of isocyanates or isothiocyanates with compounds having active hydrogen characterised by the isocyanates or isothiocyanates used
    • C08G18/71Monoisocyanates or monoisothiocyanates
    • C08G18/711Monoisocyanates or monoisothiocyanates containing oxygen in addition to isocyanate oxygen
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08GMACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G18/00Polymeric products of isocyanates or isothiocyanates
    • C08G18/06Polymeric products of isocyanates or isothiocyanates with compounds having active hydrogen
    • C08G18/70Polymeric products of isocyanates or isothiocyanates with compounds having active hydrogen characterised by the isocyanates or isothiocyanates used
    • C08G18/71Monoisocyanates or monoisothiocyanates
    • C08G18/718Monoisocyanates or monoisothiocyanates containing silicon
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08GMACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G18/00Polymeric products of isocyanates or isothiocyanates
    • C08G18/06Polymeric products of isocyanates or isothiocyanates with compounds having active hydrogen
    • C08G18/70Polymeric products of isocyanates or isothiocyanates with compounds having active hydrogen characterised by the isocyanates or isothiocyanates used
    • C08G18/72Polyisocyanates or polyisothiocyanates
    • C08G18/74Polyisocyanates or polyisothiocyanates cyclic
    • C08G18/75Polyisocyanates or polyisothiocyanates cyclic cycloaliphatic
    • C08G18/751Polyisocyanates or polyisothiocyanates cyclic cycloaliphatic containing only one cycloaliphatic ring
    • C08G18/752Polyisocyanates or polyisothiocyanates cyclic cycloaliphatic containing only one cycloaliphatic ring containing at least one isocyanate or isothiocyanate group linked to the cycloaliphatic ring by means of an aliphatic group
    • C08G18/753Polyisocyanates or polyisothiocyanates cyclic cycloaliphatic containing only one cycloaliphatic ring containing at least one isocyanate or isothiocyanate group linked to the cycloaliphatic ring by means of an aliphatic group containing one isocyanate or isothiocyanate group linked to the cycloaliphatic ring by means of an aliphatic group having a primary carbon atom next to the isocyanate or isothiocyanate group
    • C08G18/755Polyisocyanates or polyisothiocyanates cyclic cycloaliphatic containing only one cycloaliphatic ring containing at least one isocyanate or isothiocyanate group linked to the cycloaliphatic ring by means of an aliphatic group containing one isocyanate or isothiocyanate group linked to the cycloaliphatic ring by means of an aliphatic group having a primary carbon atom next to the isocyanate or isothiocyanate group and at least one isocyanate or isothiocyanate group linked to a secondary carbon atom of the cycloaliphatic ring, e.g. isophorone diisocyanate
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08GMACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G18/00Polymeric products of isocyanates or isothiocyanates
    • C08G18/06Polymeric products of isocyanates or isothiocyanates with compounds having active hydrogen
    • C08G18/70Polymeric products of isocyanates or isothiocyanates with compounds having active hydrogen characterised by the isocyanates or isothiocyanates used
    • C08G18/72Polyisocyanates or polyisothiocyanates
    • C08G18/74Polyisocyanates or polyisothiocyanates cyclic
    • C08G18/76Polyisocyanates or polyisothiocyanates cyclic aromatic
    • C08G18/7657Polyisocyanates or polyisothiocyanates cyclic aromatic containing two or more aromatic rings
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09JADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J11/00Features of adhesives not provided for in group C09J9/00, e.g. additives
    • C09J11/02Non-macromolecular additives
    • C09J11/04Non-macromolecular additives inorganic
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09JADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J175/00Adhesives based on polyureas or polyurethanes; Adhesives based on derivatives of such polymers
    • C09J175/04Polyurethanes
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09JADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J9/00Adhesives characterised by their physical nature or the effects produced, e.g. glue sticks
    • C09J9/02Electrically-conducting adhesives
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/28Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L24/29Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/83Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01RELECTRICALLY-CONDUCTIVE CONNECTIONS; STRUCTURAL ASSOCIATIONS OF A PLURALITY OF MUTUALLY-INSULATED ELECTRICAL CONNECTING ELEMENTS; COUPLING DEVICES; CURRENT COLLECTORS
    • H01R12/00Structural associations of a plurality of mutually-insulated electrical connecting elements, specially adapted for printed circuits, e.g. printed circuit boards [PCB], flat or ribbon cables, or like generally planar structures, e.g. terminal strips, terminal blocks; Coupling devices specially adapted for printed circuits, flat or ribbon cables, or like generally planar structures; Terminals specially adapted for contact with, or insertion into, printed circuits, flat or ribbon cables, or like generally planar structures
    • H01R12/50Fixed connections
    • H01R12/51Fixed connections for rigid printed circuits or like structures
    • H01R12/52Fixed connections for rigid printed circuits or like structures connecting to other rigid printed circuits or like structures
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01RELECTRICALLY-CONDUCTIVE CONNECTIONS; STRUCTURAL ASSOCIATIONS OF A PLURALITY OF MUTUALLY-INSULATED ELECTRICAL CONNECTING ELEMENTS; COUPLING DEVICES; CURRENT COLLECTORS
    • H01R4/00Electrically-conductive connections between two or more conductive members in direct contact, i.e. touching one another; Means for effecting or maintaining such contact; Electrically-conductive connections having two or more spaced connecting locations for conductors and using contact members penetrating insulation
    • H01R4/04Electrically-conductive connections between two or more conductive members in direct contact, i.e. touching one another; Means for effecting or maintaining such contact; Electrically-conductive connections having two or more spaced connecting locations for conductors and using contact members penetrating insulation using electrically conductive adhesives
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/30Assembling printed circuits with electric components, e.g. with resistor
    • H05K3/32Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/30Assembling printed circuits with electric components, e.g. with resistor
    • H05K3/32Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
    • H05K3/321Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by conductive adhesives
    • H05K3/323Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by conductive adhesives by applying an anisotropic conductive adhesive layer over an array of pads
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02Bonding areas; Manufacturing methods related thereto
    • H01L2224/04Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554External layer
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02Bonding areas; Manufacturing methods related thereto
    • H01L2224/04Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554External layer
    • H01L2224/0556Disposition
    • H01L2224/05568Disposition the whole external layer protruding from the surface
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02Bonding areas; Manufacturing methods related thereto
    • H01L2224/04Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554External layer
    • H01L2224/05573Single external layer
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/15Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/27Manufacturing methods
    • H01L2224/273Manufacturing methods by local deposition of the material of the layer connector
    • H01L2224/2733Manufacturing methods by local deposition of the material of the layer connector in solid form
    • H01L2224/27334Manufacturing methods by local deposition of the material of the layer connector in solid form using preformed layer
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001Core members of the layer connector
    • H01L2224/29099Material
    • H01L2224/291Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29101Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400°C
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001Core members of the layer connector
    • H01L2224/29099Material
    • H01L2224/2919Material with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001Core members of the layer connector
    • H01L2224/29099Material
    • H01L2224/29198Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29199Material of the matrix
    • H01L2224/2929Material of the matrix with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001Core members of the layer connector
    • H01L2224/29099Material
    • H01L2224/29198Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298Fillers
    • H01L2224/29299Base material
    • H01L2224/293Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001Core members of the layer connector
    • H01L2224/29099Material
    • H01L2224/29198Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298Fillers
    • H01L2224/29299Base material
    • H01L2224/293Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29338Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/29339Silver [Ag] as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001Core members of the layer connector
    • H01L2224/29099Material
    • H01L2224/29198Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298Fillers
    • H01L2224/29299Base material
    • H01L2224/293Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29338Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/29344Gold [Au] as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001Core members of the layer connector
    • H01L2224/29099Material
    • H01L2224/29198Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298Fillers
    • H01L2224/29299Base material
    • H01L2224/293Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29338Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/29347Copper [Cu] as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001Core members of the layer connector
    • H01L2224/29099Material
    • H01L2224/29198Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298Fillers
    • H01L2224/29299Base material
    • H01L2224/293Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29338Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/29355Nickel [Ni] as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001Core members of the layer connector
    • H01L2224/29099Material
    • H01L2224/29198Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298Fillers
    • H01L2224/29299Base material
    • H01L2224/2939Base material with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001Core members of the layer connector
    • H01L2224/29099Material
    • H01L2224/29198Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298Fillers
    • H01L2224/29399Coating material
    • H01L2224/294Coating material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/2954Coating
    • H01L2224/29599Material
    • H01L2224/29698Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29798Fillers
    • H01L2224/29799Base material
    • H01L2224/2989Base material with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/831Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector the layer connector being supplied to the parts to be connected in the bonding apparatus
    • H01L2224/83101Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector the layer connector being supplied to the parts to be connected in the bonding apparatus as prepeg comprising a layer connector, e.g. provided in an insulating plate member
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/838Bonding techniques
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/838Bonding techniques
    • H01L2224/8385Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester
    • H01L2224/83851Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester being an anisotropic conductive adhesive
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/02Bonding areas ; Manufacturing methods related thereto
    • H01L24/04Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L24/05Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/00014Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01004Beryllium [Be]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01005Boron [B]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01006Carbon [C]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01015Phosphorus [P]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01024Chromium [Cr]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01027Cobalt [Co]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01029Copper [Cu]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01033Arsenic [As]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01045Rhodium [Rh]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01047Silver [Ag]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01049Indium [In]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/0105Tin [Sn]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01078Platinum [Pt]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01079Gold [Au]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013Alloys
    • H01L2924/014Solder alloys
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/06Polymers
    • H01L2924/0665Epoxy resin
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/06Polymers
    • H01L2924/078Adhesive characteristics other than chemical
    • H01L2924/07802Adhesive characteristics other than chemical not being an ohmic electrical conductor
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/06Polymers
    • H01L2924/078Adhesive characteristics other than chemical
    • H01L2924/0781Adhesive characteristics other than chemical being an ohmic electrical conductor
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/06Polymers
    • H01L2924/078Adhesive characteristics other than chemical
    • H01L2924/0781Adhesive characteristics other than chemical being an ohmic electrical conductor
    • H01L2924/07811Extrinsic, i.e. with electrical conductive fillers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/095Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00 with a principal constituent of the material being a combination of two or more materials provided in the groups H01L2924/013 - H01L2924/0715
    • H01L2924/097Glass-ceramics, e.g. devitrified glass
    • H01L2924/09701Low temperature co-fired ceramic [LTCC]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/102Material of the semiconductor or solid state bodies
    • H01L2924/1025Semiconducting materials
    • H01L2924/10251Elemental semiconductors, i.e. Group IV
    • H01L2924/10253Silicon [Si]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151Die mounting substrate
    • H01L2924/156Material
    • H01L2924/15786Material with a principal constituent of the material being a non metallic, non metalloid inorganic material
    • H01L2924/15788Glasses, e.g. amorphous oxides, nitrides or fluorides
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/1901Structure
    • H01L2924/1904Component type
    • H01L2924/19041Component type being a capacitor
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/36Assembling printed circuits with other printed circuits
    • H05K3/361Assembling flexible printed circuits with other printed circuits

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Adhesives Or Adhesive Processes (AREA)
  • Adhesive Tapes (AREA)
  • Combinations Of Printed Boards (AREA)
  • Non-Insulated Conductors (AREA)
  • Conductive Materials (AREA)

Abstract

Disclosed is a film-like circuit connecting material for electrically connecting a first circuit member, wherein a first circuit electrode is formed on a major surface of a first circuit board, with a second circuit member, wherein a second circuit electrode is formed on a major surface of a second circuit board, in such a manner that the first and second circuit electrodes face each other. The film-like circuit connecting material contains a film-forming material, a radically polymerizable compound, a radical polymerization initiator which generates a free radical when heated, and an isocyanate group-containing compound. In this film-like circuit connecting material, the isocyanate group-containing compound is contained in an amount of 0.09-5 parts by mass relative to 100 parts by mass of the total of the film-forming material and the radically polymerizable compound.

Description

The syndeton of membranaceous circuit connection material and circuit block
The application is to be on May 7th, 2008 applying date of original application, and application number is 200880014148.3, and denomination of invention is divided an application for the Chinese patent application of " syndeton of membranaceous circuit connection material and circuit block ".
Technical field
The present invention relates to the syndeton of a kind of membranaceous circuit connection material and circuit block.
Background technology
In recent years, in fields such as semi-conductor, liquid-crystal display, for fixing electronic unit or carry out circuit and connect, various adhesivess had been used.Among these purposes, along with densification, height become more meticulous growingly, caking agent high bonding force, reliability have also been required.
Particularly being connected of liquid-crystal display and TCP, FPC and TCP be connected or in being connected of FPC and printing distributing board, will in caking agent, be dispersed with electroconductive particle and the anisotropic conductive caking agent that forms as circuit connection material.In addition, when being installed in semiconductor silicon chips on the substrate recently, replace wire bond in the past, carried out by upside-down mounting semiconductor silicon chips being directly installed on basically so-called upside-down installation method, also begun the application of anisotropic conductive caking agent at this.
And in recent years in the precise electronic field of machines, along with the development of circuit densification, the wide and electrode space of electrode becomes extremely narrow.For this reason, used the condition of contact of the circuit connection material of epoxy resin to become to take place easily in the past the coming off of distribution, peel off, position deviation.
In addition, in order to enhance productivity, the tie-time is shortened in expectation, thus seek a kind of can be at 10 seconds circuit connection materials with interior connection.Therefore, developing the circuit connection material (for example with reference to patent documentation 1) that long electric and electronic of the rapid curing performance excellence of low temperature and serviceable time is used.
Patent documentation 1: Japanese kokai publication hei 11-97825 communique
Summary of the invention
The problem that invention will solve
But the bonding strength that foregoing circuit connects material is different because of the material of the circuit block that connects.Particularly circuit block surface is with silicon nitride, silicone resin or polyimide resin coating, or when being attached to these resins on the circuit block surface, bonding strength is tended to descend.Therefore, though a kind of material for which kind of circuit block of expectation, the circuit connection material that excellent in adhesion and serviceable time is very long.
The present invention In view of the foregoing makes, no matter purpose is to provide a kind of material to which kind of circuit block all to demonstrate very long membranaceous circuit connection material of very high cementability and serviceable time and the syndeton of using the circuit block of this circuit connection material.
The method of dealing with problems
The invention provides a kind of membranaceous circuit connection material, it is, be used for to be formed with at the interarea of first circuit substrate membranaceous circuit connection material that second circuit parts that first circuit block of first circuit electrode and interarea at the second circuit substrate be formed with the second circuit electrode are electrically connected under the relative state of first and second circuit electrodes, this membranaceous circuit connection material contains film formation material, free-radical polymerised compound, through adding the radical polymerization initiator of the free free radical of thermogenesis, the compound that contains isocyanate group, with respect to total 100 mass parts of film formation material and free-radical polymerised compound, contain isocyanate group compound to contain proportional be 0.09~5 mass parts.
By having above-mentioned formation, no matter membranaceous circuit connection material of the present invention all demonstrates very high cementability to the material of which kind of circuit block and the serviceable time is very long.The reason that can realize this effect is also indeterminate, but the inventor etc. are presumed as follows.
Usually, in order to prolong the serviceable time of circuit connection material, need pilot circuit to connect the reactivity of material.But, if controlled the reactivity of circuit connection material, according to had the tendency that is difficult to demonstrate enough cementabilities by the kind of convered structure.On the other hand, though think reactive excellent under the above-mentioned temperature condition of compound when circuit connects that contains isocyanate group, under the temperature lower than it, be stable.Therefore think that membranaceous circuit connection material of the present invention can be taken into account good cementability and very long serviceable time by contain the compound that contains isocyanate group of specified amount simultaneously with other composition.
Above-mentioned membranaceous circuit connection material preferably contains fluorinated organic compound.This membranaceous circuit connection material not only cementability further improves, and also plays the effect of transfer printing excellence.
In addition, preferably to comprise weight-average molecular weight be the organic compound with amino-formate bond more than 10000 to the film formation material of membranaceous circuit connection material of the present invention.Thus, the flexibility that can further bring into play membranaceous circuit connection material effectively improve, with the effect of the present invention excellent in adhesion of various circuit blocks.
Circuit connection material of the present invention preferably further contains electroconductive particle.Thus, circuit connection material himself can be easy to have electroconductibility.For this reason, this circuit connection material can be used as conductive adhesive in electrical industries such as circuit electrode, semi-conductor or electronics industry.And this moment, because circuit connection material has electroconductibility, so can further reduce the connection resistance after the curing.
The invention provides a kind of syndeton of circuit block, it has first circuit block, second circuit parts and circuit connecting section, described first circuit block is for being formed with the circuit block of first circuit electrode at the interarea of first circuit substrate, the circuit block that described second circuit parts are formed with the second circuit electrode and dispose according to the mode that makes the relative configuration with first circuit electrode of second circuit electrode for the interarea at the second circuit substrate, described circuit connecting section is arranged between first circuit substrate and the second circuit substrate, connect first circuit block and second interconnecting piece to be electrically connected first and second circuit electrodes, circuit connecting section is formed by the cured article of above-mentioned membranaceous circuit connection material.
The syndeton of sort circuit parts is because the cured article of the membranaceous circuit connection material of the present invention that its circuit connecting section is very excellent by cementability, the serviceable time is grown very much forms, so in the insulativity on keeping same circuit block between adjacent circuit electrode, can reduce the resistance value between the first and second relative circuit electrodes.
In the syndeton of circuit block of the present invention, the surface of at least one side in first and second circuit electrodes preferably forms by comprising the material that is selected from least a material in the group that gold and silver, tin, platinum metals and indium-tin-oxide form.In the syndeton of sort circuit parts, in the insulativity on keeping same circuit block between adjacent circuit electrode, can further reduce the resistance value between relative circuit electrode.
In addition, in the syndeton of circuit block of the present invention, at least one side in first and second circuit substrates is preferably by comprising the substrate that the material that is selected from least a material in the group that polyethylene terephthalate, polyethersulfone, Resins, epoxy, acrylic resin, polyimide resin and glass forms forms.When the circuit connection material of the invention described above solidify to form circuit connecting section, between the substrate that constitutes with these certain materials, can realize higher cementability.
And, in the syndeton of foregoing circuit parts, be preferably formed with the layer that comprises at least a material in the group that is selected from silicon nitride, silicone resin, polyimide resin and acrylic resin composition between at least one side in first and second circuit blocks and the foregoing circuit connection section.Thus, do not compare with forming above-mentioned layer, the cementability between circuit block and the circuit connecting section further improves.
The effect of invention
According to the present invention, no matter can provide a kind of material to which kind of circuit block all to demonstrate very long membranaceous circuit connection material of very high cementability and serviceable time and the syndeton of using the circuit block of these circuit connection materials.
Description of drawings
Fig. 1 is the fragmentary cross sectional view of an embodiment of the circuit block syndeton among expression the present invention.
Fig. 2 is for representing the process picture sheet of an example of the manufacture method of circuit block syndeton shown in Figure 1 by fragmentary cross sectional view.
Nomenclature
Circuit connection structure 5 caking agent compositions 7 electroconductive particles of 1 circuit block
Cured article 20 first circuit blocks of 10 circuit connecting section, 11 caking agent compositions
21 first circuit substrate 21a, the first circuit substrate interarea, 22 first circuit electrodes
30 second circuit parts, 31 second circuit substrate 31a second circuit substrate interareas
32 second circuit electrodes, 40 membranaceous circuit connection materials
Embodiment
Below, as required with reference to accompanying drawing, preferred implementation of the present invention is elaborated.In addition, in the accompanying drawings, same parts has same-sign, and omits its repeat specification.In addition, wait the position relation up and down unless otherwise specified, then based on position shown in the drawings relation.And then the dimension scale of accompanying drawing is not limited to graphic scale.In addition, " (methyl) vinylformic acid " in this specification sheets refers to " vinylformic acid " and " methacrylic acid " corresponding with it, " (methyl) acrylate " refers to " acrylate " and " methacrylic ester " corresponding with it, and " (methyl) acryloyl " refers to " acryloyl " and " methacryloyl " corresponding with it.
(membranaceous circuit connection material)
Membranaceous circuit connection material of the present invention (circuit connecting adhesive film) will be formed with first circuit block of first circuit electrode at the interarea of first circuit substrate and be electrically connected under the relative state of first and second circuit electrodes with the second circuit parts that interarea at the second circuit substrate is formed with the second circuit electrode.The compound that membranaceous circuit connection material of the present invention contains film formation material, free-radical polymerised compound, the radical polymerization initiator through adding the free free radical of thermogenesis and contains isocyanate group is used as the caking agent composition, with respect to total 100 mass parts of film formation material and free-radical polymerised compound, the content that contains the compound of isocyanate group is 0.09~5 mass parts.
Film formation material is that liquid object is being solidified, and will constitute composition and form when membranaceous, and this film is handled easily, can pay to be difficult for splitting, break and the material of the mechanical characteristics of adhesion, and be to can be used as the material that film is handled in the normal state.As film formation material, for example can enumerate polyvinyl formal, polystyrene resin, polyvinyl butyral resin, vibrin, polyester urethane resin, polyamide resin, urethane resin, polyamide-imide resin, polyimide resin, xylene resin, phenoxy resin etc.In addition, film formation material can carry out modification by free-radical polymerised functional group.
Consider that from the more excellent viewpoint of cementability the film formation material of membranaceous circuit connection material film formation material of the present invention preferably contains organic compound with amino-formate bond (below, be sometimes referred to as " carbamate compounds ").In addition, have amino-formate bond in preferred its main chain of carbamate compounds, when more preferably having amino-formate bond, have ester bond.
This carbamate compounds for example can obtain by polyester polyol and di-isocyanate reaction.Usually, the carbamate compounds that is obtained by this reaction is sometimes referred to as polyester urethane resin.
As vulcabond, suitable use 2,4-tolylene diisocyanate (TDI), 4,4 '-diphenylmethanediisocyanate (MDI), 1,6-hexamethylene diisocyanate (HDI), isophorone diisocyanate aromatic series, alicyclic or aliphatic vulcabond such as (IPDI).
Polyester polyol for example can obtain by dicarboxylic acid and glycol reaction.Aromatic series or aliphatic dicarboxylic acids such as the preferred terephthalic acid of dicarboxylic acid, m-phthalic acid, hexanodioic acid, sebacic acid.The preferred ethylene glycol of glycol, propylene glycol, 1, glycolss such as 4-butyleneglycol, hexylene glycol, neopentyl glycol, Diethylene Glycol, triethylene glycol.
The weight-average molecular weight of carbamate compounds is preferably more than 10000.If the weight-average molecular weight of carbamate compounds is less than 10000, then film formation performance is tending towards reducing.In addition, the higher limit of the weight-average molecular weight of carbamate compounds is not particularly limited, if but weight-average molecular weight is too high, and then solvability and the intermiscibility to solvent reduces, the modulation of being difficult to is arranged for the trend that is configured as membranaceous coating fluid, so preferred about 200000.
Weight-average molecular weight in this specification sheets is measured by gel permeation chromatography (GPC) analysis according to the condition shown in the table 1, tries to achieve by converting with the polystyrene standard working curve.In addition, GPC condition 1 condition when measuring the weight-average molecular weight of polyimide resin, GPC condition 2 condition when measuring the weight-average molecular weight of the organic compound beyond the polyimide resin.
Table 1
Figure BSA00000318273600061
Free-radical polymerised compound is the compound with functional group that can radical polymerization.Free-radical polymerised compound is suitable (methyl) acrylic compound, maleimide compound or the styrene derivatives of using for example.These free-radical polymerised compounds can be any in polymerizable monomer and the polyreactive oligomers, also can and with polymerizable monomer and polyreactive oligomers.Because polyreactive oligomers is generally high viscosity, so when using polyreactive oligomers, preferably also regulate viscosity with polymerizable monomers such as low viscous polymerizability polyfunctional group (methyl) acrylate.
As (methyl) acrylic compound, for example can enumerate optical polymerism oligopolymer such as epoxy type (methyl) origoester acrylate, carbamate type (methyl) origoester acrylate, polyether-type (methyl) origoester acrylate and polyester type (methyl) origoester acrylate; Trimethylolpropane tris (methyl) acrylate, polyoxyethylene glycol two (methyl) acrylate, polyalkylene glycol two (methyl) acrylate, (methyl) vinylformic acid two cyclopentenes esters, (methyl) vinylformic acid two cyclopentenes oxygen base ethyl esters, neopentyl glycol two (methyl) acrylate, Dipentaerythritol six (methyl) acrylate, isocyanuric acid modification 2 functional groups (methyl) acrylate, isocyanuric acid modification 3 functional groups (methyl) acrylate, polyfunctional group (methyl) acrylic compound such as 2,2 '-two (methyl) acryloxy diethyl phosphoric acid ester and 2-(methyl) acryloxy ethyl phosphate ester acid; Tetramethylolmethane (methyl) acrylate, (methyl) 2-cyanoethyl acrylate, (methyl) cyclohexyl acrylate, (methyl) vinylformic acid-2-(2-ethoxy ethoxy) ethyl ester, (methyl) vinylformic acid-2-ethoxy ethyl ester, (methyl) ethyl acrylate, the just own ester of (methyl) vinylformic acid, (methyl) vinylformic acid-2-hydroxyl ethyl ester, (methyl) Propylene glycol monoacrylate, (methyl) isobornyl acrylate, (methyl) isodecyl acrylate, (methyl) Isooctyl acrylate monomer, (methyl) vinylformic acid n-dodecane ester, (methyl) vinylformic acid-2-methoxyl group ethyl ester, (methyl) vinylformic acid-2-phenoxy ethyl, tetrahydrofurfuryl alcohol (methyl) acrylate, neopentyl glycol two (methyl) acrylate, (methyl) vinylformic acid tertiary butyl amino ethyl ester, (methyl) cyclohexyl acrylate, (methyl) vinylformic acid two cyclopentenes oxygen base ethyl esters, (methyl) vinylformic acid-2-hydroxyl ethyl ester, (methyl) isobornyl acrylate, (methyl) isodecyl acrylate, (methyl) vinylformic acid n-dodecane ester, stearyl (methyl) acrylate, (methyl) tridecyl acrylate and (methyl) glycidyl acrylate.
(methyl) acrylic compound is can be separately a kind of or make up two or more uses.In order to suppress the cure shrinkage of circuit connection material, provide flexible, preferably allocate carbamate type (methyl) origoester acrylate.
The compound that contains two above dimaleoyl iminos in the preferred molecule of maleimide compound.As its concrete example, can enumerate 1-methyl-2,4-bismaleimides benzene, N, N '-meta-phenylene bismaleimide, N, N '-TOPOT 2,2 maleimide, N, a N '-tolyl bismaleimides, N, N '-4,4-biphenylene bismaleimides, N, N '-4,4-(3,3 '-dimethyl-biphenylene) bismaleimides, N, N '-4,4-(3,3 '-dimethyl diphenylmethane) bismaleimides, N, N '-4,4-(3,3 '-the diethyl ditan) bismaleimides, N, N '-4,4-ditan bismaleimides, N, N '-4,4-diphenyl propane bismaleimides, N, N '-4,4-phenyl ether bismaleimides, N, N '-3,3 '-sulfobenzide bismaleimides, two [4-(the 4-maleimide phenoxy group) phenyl] propane of 2,2-, 2, two [3-sec-butyl-4-(the 4-maleimide phenoxy group) phenyl] propane of 2-, 1, two [4-(the 4-maleimide phenoxy group) phenyl] decane of 1-, 4,4 '-cyclohexylene-two [1-(4-maleimide phenoxy group)-2-phenylcyclohexane] and two [4-(the 4-maleimide phenoxy group) phenyl] HFC-236fa of 2,2-.
Maleimide compound is can be separately a kind of or make up two or more uses.
In order to improve cementability, the free-radical polymerised compound of membranaceous circuit connection material of the present invention preferably contains phosphate type (methyl) acrylate.By containing phosphate type (methyl) acrylate, the cementability of membranaceous circuit connection material, the particularly cementability with inorganic materials such as metal improve.Phosphate type (methyl) acrylate is not particularly limited, and can use known phosphate type (methyl) acrylate.As its concrete example, can enumerate the compound of following general formula (2) expression.
[Chemical formula 1]
Wherein, n represents 1~3 integer.
Usually, phosphate type (methyl) acrylate can be used as the reactant of phosphoric anhydride and (methyl) vinylformic acid 2-hydroxyl ethyl ester and obtains.As phosphate type (methyl) acrylate, specifically can enumerate list (2-methacryloxyethyl) phosphate ester acid, two (2-methacryloxyethyl) phosphate ester acid.These esters are can be separately a kind of or make up two or more uses.
Consider that from the viewpoint that cementability is more excellent membranaceous circuit connection material of the present invention can comprise (methyl) allyl acrylate.With respect to total 100 mass parts of film formation material and free-radical polymerised compound, the cooperation ratio of (methyl) allyl acrylate is preferably 0.1~10 mass parts, more preferably 0.5~5 mass parts.
In addition, as through adding the radical polymerization initiator of the free free radical of thermogenesis, can use existing known peralcohol (organo-peroxide) and azo-compound.
Organo-peroxide and azo-compound are through heating the free free radical of main generation.When these compounds are used as radical polymerization initiator, according to as the connection temperature of purpose, tie-time, serviceable time (below, be sometimes referred to as " storage period ") etc., can from organo-peroxide and/or azo-compound, suitably select one or more.
Consider from taking into account reactive viewpoint high and that storage period is long, preferred 10 hours half life temperatures of organo-peroxide are more than 40 ℃ and 1 minute half life temperature is organo-peroxide below 180 ℃, and more preferably 10 hours half life temperatures are more than 60 ℃ and 1 minute half life temperature is organo-peroxide below 170 ℃.In addition, for the circuit electrode (connection terminal) that prevents the open circuit potential parts, the preferred chlorion of organo-peroxide, organic acid content are below the 5000 quality ppm.And then, the more preferably less organo-peroxide of the organic acid that produces after the thermal degradation.
As organo-peroxide, concrete more than one the organo-peroxide of preferably from the group that diacyl peroxide, peroxy dicarbonate, peroxyester, ketal peroxide, dialkyl peroxide, hydroperoxide and peroxidation silane are formed, selecting.Among these organo-peroxides, reactive high viewpoint consideration when the storage stability height when preserving from taking into account and use, the more preferably organo-peroxide of more than one that from the group that peroxyester, ketal peroxide, dialkyl peroxide, hydroperoxide and peroxidation silane are formed, select.And then, in order to obtain higher reactivity, further preferred peroxyester and ketal peroxide.
As diacyl peroxide; for example can enumerate peroxidation isobutyryl, peroxidation-2; 4-dichloro-benzoyl, peroxidation-3,5,5-trimethyl acetyl, peroxidation decoyl, lauroyl peroxide, stearoyl, succinyl peroxide, benzoyl peroxide toluene and benzoyl peroxide.These diacyl peroxides are can be separately a kind of or make up two or more uses.
As dialkyl peroxide, for example can enumerate α, α '-two (tert-butyl peroxide) diisopropyl benzene, dicumyl peroxide, 2,5-dimethyl-2,5-two (tert-butyl peroxide) hexane and tertiary butyl cumyl peroxide.These dialkyl peroxides are can be separately a kind of or make up two or more uses.
As peroxy dicarbonate, for example can enumerate di peroxy dicarbonate, diisopropyl peroxydicarbonate, two (4-tert-butylcyclohexyl) peroxy dicarbonate, two-2-oxyethyl group methoxy base peroxy dicarbonate, two (peroxidation-2-ethylhexyl) two carbonic ethers, dimethoxy butyl peroxyization two carbonic ethers and two (peroxidation-3-methyl-3-oxyethyl group butyl) two carbonic ethers.These peroxy dicarbonates are can be separately a kind of or make up two or more uses.
As peroxyester; for example can enumerate peroxidation neodecanoic acid cumyl ester; peroxidation neodecanoic acid-1; 1; 3; 3-tetramethyl-butyl ester; peroxidation neodecanoic acid-1-cyclohexyl-1-methyl ethyl ester; the own ester of peroxidation neodecanoic acid uncle; the peroxidation PIVALIC ACID CRUDE (25) tert-butyl ester; peroxidation-2 ethyl hexanoic acid-1; 1; 3; 3-tetramethyl-butyl ester; 2; 5-dimethyl-2; two (peroxidation-2-ethyl hexanoyl base) hexanes of 5-; peroxidation-2 ethyl hexanoic acid-1-cyclohexyl-1-methyl ethyl ester; peroxidation-own the ester of 2 ethyl hexanoic acid uncle; peroxide-2-ethyl hexanoic acid tert-butyl; the peroxidation tert-butyl isobutyrate; 1; two (tert-butyl peroxide) hexanaphthenes of 1-; uncle's hexyl peroxidation sec.-propyl monocarbonate; peroxidation-3; 5; the 5-tri-methyl hexanoic acid tert-butyl ester; the peroxidation lauric acid tert-butyl ester; 2; 5-dimethyl-2, two (m-toluyl peroxide base) hexanes of 5-; tert-butyl hydroperoxide sec.-propyl monocarbonate; tert-butyl hydroperoxide-2-ethylhexyl monocarbonate; the own ester of peroxidation M-nitro benzoic acid uncle; peroxide acetic acid butyl ester and two (tert-butyl peroxide) hexahydro terephthalic acid ester.These peroxyesters are can be separately a kind of or make up two or more uses.
As ketal peroxide, for example can enumerate 1, two (the peroxidation uncle hexyls)-3,3 of 1-, 5-trimethyl-cyclohexane, 1, two (the peroxidation uncle hexyl) hexanaphthenes, 1 of 1-, two (tert-butyl peroxide)-3,3 of 1-, 5-trimethyl-cyclohexane, 1, two (tert-butyl peroxide) cyclododecanes of 1-and two (tert-butyl peroxide) decane of 2,2-.These ketal peroxides are can be separately a kind of or make up two or more uses.
As hydroperoxide, for example can enumerate diisopropyl benzene hydroperoxide and cumene hydroperoxide.These hydroperoxide are can be separately a kind of or make up two or more uses.
As peroxidation silane, for example can enumerate tert-butyl peroxide trimethyl silane, two (tertiary butyl) dimethylsilane of peroxidation, tert-butyl peroxide trivinyl silane, two (tertiary butyl) divinyl silane of peroxidation, peroxidation three (tertiary butyl) vinyl silanes, tert-butyl peroxide triallyl silane, two (tertiary butyl) diallylsilanes of peroxidation and peroxidation three (tertiary butyl) allyl silicane.These peroxidation silane are can be separately a kind of or make up two or more uses.
When using these organo-peroxides, can further make up uses such as decomposition accelerating agent, inhibitor.In addition, these organo-peroxides are if when carrying out the superoxide of micro encapsulation with linings such as polyurethanes, polyester polymer substances, and the serviceable time prolongs, thereby preferred.
In addition, as azo-compound, for example can enumerate 2,2 '-azo is two-2,4-methyl pentane nitrile, 1,1 '-azo two (1-acetoxyl group-1-diphenylphosphino ethane), 2,2 '-Diisopropyl azodicarboxylate, 2,2 '-azo two (2-methylbutyronitrile), dimethyl-2,2 '-Diisopropyl azodicarboxylate, 4,4 '-azo two (4-cyanopentanoic acid) and 1,1 '-azo two (1-cyclohexane nitrile).These azo-compounds are can be separately a kind of or make up two or more uses.
Usually, with respect to total 100 mass parts of film formation material and free-radical polymerised compound, the cooperation ratio of radical polymerization initiator is preferably 0.05~20 mass parts, more preferably 0.1~10 mass parts.The cooperation ratio of radical polymerization initiator is during less than 0.05 mass parts, and transformation efficiency reduces, and is difficult to tendency that membranaceous circuit connection material is solidified so have.When the cooperation ratio of radical polymerization initiator exceeds 20 mass parts, have the tendency that the serviceable time shortens.In addition, the cooperation ratio of radical polymerization initiator can be according to as suitably setting the connection temperature of purpose, tie-time, storage period etc.For example, tie-time is below 25 seconds the time, and in order to obtain sufficient transformation efficiency, the cooperation ratio of radical polymerization initiator is with respect to total 100 mass parts of film formation material and free-radical polymerised compound, be preferably 2~10 mass parts, more preferably 4~8 mass parts.
Contain the compound of isocyanate group so long as have the compound of isocyanate group in the molecule and get final product, be not particularly limited.As the compound that contains isocyanate group, for example can enumerate tolysulfonyl based isocyanate, octadecylisocyanate, (methyl) acryl isocyanic ester, γ-monoisocyanates compounds such as triisocyanate propyl-triethoxysilicane; 2,4 toluene diisocyanate, 2,6-tolylene diisocyanate, xylylene diisocyanate, hexamethylene diisocyanate, isophorone diisocyanate, ditan-4, diisocyanate cpds such as 4-vulcabond; The compound that has isocyanate group endways that reaction by various polyether polyols, polyester polyol, polymeric amide etc. and isocyanate compound obtains.Diisocyanate cpd can be used as commercially available product and obtains, and for example, can use the trade(brand)name " Ke Laonuo (コ ロ ネ one ト) L ", " Mi Laonuo (ミ リ オ ネ one ト) MR ", " Ke Laonuo EH ", " Ke Laonuo HL " of Japanese polyurethane industry society system etc.In addition, from further improving being considered by the viewpoint of the cementability of convered structure, the compound that contains isocyanate group preferably has hydroxyl, nitro, polar group that the carboxyl isoreactivity is high endways.And then, when the compound that contains isocyanate group has alkoxysilane group such as Trimethoxy silane base, triethoxysilicane alkyl, these groups with formed chemical bond by the planar water on convered structure surface, can be bonding securely, thereby more preferably.
With respect to total 100 mass parts of film formation material and free-radical polymerised compound, the above-mentioned content that contains the compound of isocyanate group is 0.09~5 mass parts, is preferably 0.1~5 mass parts, more preferably 0.5~3 mass parts.The content of compound that contains isocyanate group is difficult to obtain sufficient cementability during less than 0.09 mass parts; When exceeding 5 mass parts, the serviceable time is tended to shorten.
In addition, the caking agent composition of membranaceous circuit connection material of the present invention preferably contains fluorinated organic compound.Fluorinated organic compound can be known fluorinated organic compound so long as have the compound of fluorine in the molecule and get final product, and also can be that above-mentioned film formation material or free-radical polymerised compound have fluorine atom.Particularly, for example can enumerate fluorine-containing polyvinyl butyral resin, fluorine-containing vinyl-formal resin, fluorinated polyimide resin, fluorine-containing polyamide resin, fluorine-containing polyamide-imide resin, fluorine-containing vibrin, fluorine-containing resol, fluorine-containing epoxy resin, fluorine-containing phenoxy resin, fluorochemical urethane resin, fluorine-containing polyester urethane resin, fluorine-containing polyarylate resin, fluorine-containing styrene resin, fluorine-containing silicone resin, fluorine-containing class rubber, fluorine-containing nitrile rubber, fluorine-containing NBR, fluorine-containing SBS etc.These fluorinated organic compounds are can be separately a kind of or mix two or more uses.When membranaceous circuit connection material contained these fluorinated organic compounds, no matter the material to which kind of circuit block all embodied better cementability, and transfer printing is inhibited over time, and transfer printing is also excellent.
Stress retentivity excellence when solidifying, the viewpoint that cementability further improves consider, the weight-average molecular weight of fluorinated organic compound is preferred 5000~1000000, more preferably 20000~200000.The weight-average molecular weight of fluorinated organic compound is less than 5000 o'clock, has film and forms the inadequate tendency of performance, and weight-average molecular weight exceeds at 1000000 o'clock, has the tendency with the intermiscibility variation of other composition.
And then excellent for stress is relaxed, membranaceous circuit connection material of the present invention can contain acrylic rubber.As acrylic rubber, can use polymkeric substance or multipolymer that at least a acrylic monomer polymerization in vinylformic acid, (methyl) acrylate or the vinyl cyanide is obtained.Acrylic rubber also can be the multipolymer that above-mentioned monomer and (methyl) glycidyl acrylate copolymerization with glycidyl ether are obtained.From the angle of the cohesive force that improves membranaceous circuit connection material, the weight-average molecular weight of acrylic rubber is preferably more than 200000.
In the membranaceous circuit connection material of the present invention, except mentioned component, also can add other material as the caking agent composition according to application target.For example, also can suitably add bonding auxiliary agents such as coupling agent, closing force rising agent, flow agent in the membranaceous circuit connection material.Thus, can pay better cementability, the property handled.
Consider that from the angle that cementability improves coupling agent can preferably use the material that contains ketoimine, vinyl, propenyl, amino, epoxy group(ing) and isocyanate group.Particularly, can enumerate (3-methacryloxypropyl) Trimethoxy silane as the silane coupling agent with propenyl, (3-acryloyl-oxy propyl group) Trimethoxy silane, (3-methacryloxypropyl) dimethoxy-methyl silane, (3-acryloyl-oxy propyl group) dimethoxy-methyl silane can be enumerated N-β (amino-ethyl) gamma-amino propyl trimethoxy silicane as containing amino silane coupling agent, N-β (amino-ethyl) gamma-amino propyl group methyl dimethoxysilane, γ-An Jibingjisanyiyangjiguiwan, N-phenyl-gamma-amino propyl trimethoxy silicane.Can enumerate as the silane coupling agent that contains ketoimine and to make the above-mentioned silane coupling agent that ketone compounds such as amino silane coupling agent and acetone, methyl ethyl ketone, mibk react and obtain that has.In addition, can enumerate γ-glycidoxypropyltrimewasxysilane, γ-glycidoxypropyl triethoxyl silane, γ-glycidoxypropyl-methyl dimethoxysilane, γ-glycidoxypropyl-methyldiethoxysilane as the silane coupling agent that contains epoxy group(ing).
With respect to total 100 mass parts of other batching in the circuit connection material, preferred 0.1~20 mass parts of the cooperation ratio of coupling agent.The cooperation ratio of coupling agent has the tendency of the additive effect that can not get essence during less than 0.1 mass parts.In addition, when the cooperation ratio of coupling agent exceeded 20 mass parts, the film of the adhesive linkage when support base material forms the adhesive linkage of being made by circuit connection material formed performance and tends to reduce, and thickness intensity is also tended to reduce.
Membranaceous circuit connection material of the present invention even do not contain electroconductive particle, also can connect by the direct contact between the relative circuit electrode when connecting.But, when membranaceous circuit connection material contains electroconductive particle, can access the connection between the more stable circuit electrode, thus preferred.
In the present invention, as long as the electroconductive particle that contains as required has the electroconductibility that can obtain being electrically connected, then be not particularly limited.As electroconductive particle, for example can enumerate metallics and the carbon of Au, Ag, Ni, Cu and scolding tin etc.In addition, electroconductive particle also can be the particle of examining with one deck or two-layer above layer lining conduct, and its outermost layer has the particle of electroconductibility.At this moment, considering from the viewpoint that obtains more excellent storage period, with regard to outermost layer, compare with transition metal such as Ni, Cu, is principal constituent with precious metals such as Au, Ag and/or platinum metals preferably, more preferably by at least a formation the in these precious metals.Among these precious metals, Au most preferably.
Electroconductive particle also can be further in order to precious metal be principal constituent layer to as nuclear with the transition metal be the particle of principal constituent or tegmental nuclei be that the surface of the layer of principal constituent is covered and forms with the transition metal.In addition, electroconductive particle also can be with dielectric glass, pottery, plastics etc. be the insulativity particle of principal constituent as nuclear, on the surface of this nuclear, be the particle that the layer of principal constituent is covered and forms in order to above-mentioned metal or carbon.
Electroconductive particle is when being covered the particle that forms with conductive layer to the nuclear of insulativity particle, and preferred insulativity particle is principal constituent with plastics, and outermost layer is principal constituent with the precious metal.Thus, good distortion can take place at heating and pressurization in the electroconductive particle in the membranaceous circuit connection material.And, when junction circuit etc., increase with the circuit electrode of electroconductive particle, the contact area of connection terminal.Therefore, can further improve the connection reliability of membranaceous circuit connection material.According to identical viewpoint, electroconductive particle preferably comprises abovely to be stated heating melt metal takes place is the particle of principal constituent.
Electroconductive particle is when being covered the particle that forms with conductive layer to the nuclear of insulativity particle, and in order to obtain better electroconductibility, the thickness of conductive layer is preferably 100
Figure BSA00000318273600131
(10nm).In addition, electroconductive particle for further in order to precious metal be principal constituent layer to as nuclear with the transition metal be the particle of principal constituent or tegmental nuclei be the surface of the layer of principal constituent when being covered the particle that forms with the transition metal, be that the thickness of the layer of principal constituent is preferably 300 as outermost layer with above-mentioned precious metal
Figure BSA00000318273600132
(30nm).This thickness is less than 300
Figure BSA00000318273600133
The time, outermost layer breaks easily.The result is, the transition metal that exposes contacts with the caking agent composition, and the redoxomorphism by transition metal is easy to generate free free radical, so have the tendency that reduce storage period easily.On the other hand, when the thickness of above-mentioned conductive layer is too thick, because those effects also reach capacity, so its thickness preferably sets below 1 μ m.
When membranaceous circuit connection material contained electroconductive particle, the cooperation ratio of electroconductive particle was not particularly limited, but with respect to caking agent composition 100 parts by volume in the membranaceous circuit connection material, was preferably 0.1~30 parts by volume, more preferably 0.1~10 parts by volume.This value has the tendency that is difficult to obtain good electrical conductivity during less than 0.1 parts by volume, when exceeding 30 parts by volume, has the tendency of the short circuit of easy generation circuit etc.The volume of each composition before in addition, the cooperation ratio (parts by volume) of electroconductive particle can the membranaceous circuit connection material when making 23 ℃ be solidified is determined.The volume of each composition can be tried to achieve according to following method, utilize proportion to be scaled the method for volume by weight, maybe this composition is put into and be equipped with wettingly but do not dissolve or the containers such as graduated cylinder of the appropriate solvent (water, alcohol etc.) of this composition of swelling well, calculate the method for its volume by the volumeter that increases.In addition, with circuit connection material be divided into two-layer more than, be divided into the layer that contains radical polymerization initiator and when layer of containing electroconductive particle, can improve storage period.
Membranaceous circuit connection material among the present invention also can contain rubber.Thus, can improve mitigation and the cementability of stress.Rubber particle is so long as its median size is below 2 times of electroconductive particle median size that cooperate, and the material below 1/2 that its storage elastic modulus under room temperature (25 ℃) also is electroconductive particle and circuit connection material storage elastic modulus at room temperature gets final product.Particularly the material of rubber particle is that the particulate of polysiloxane, acrylic latex, SBR, NBR, polybutadiene rubber can be suitable for being used alone or in mixture of two or more.The solvent resistance excellence of these three-dimensional cross-linked rubber particles, and be dispersed in easily in the membranaceous circuit connection material.
With the membranaceous circuit connection material that mentioned component constitutes, be when the junction circuit parts, the caking agent composition melt-flow in the circuit connection material, connects relative circuit block after, solidify the material that also keeps connection.Therefore, the flowability of membranaceous circuit connection material is important factor.
For example, be that the circuit connection material of 35 μ m, 5mm * 5mm is clipped between the sheet glass that thickness is 0.7mm, 15mm * 15mm with thickness, heating and pressurizeing 10 seconds time the under 150 ℃, the condition of 2MPa, value with the flowability (B)/(A) of the area (B) after initial stage area (A) and heating and pressurizing expression is preferably 1.3~3.0, and more preferably 1.5~2.5.(B)/(A) value was less than 1.3 o'clock, and it is mobile poor to have, and can not get the tendency of the connection of good circuit block.On the other hand, value (B)/(A) exceeds at 3.0 o'clock, is easy to generate bubble, has the tendency of connection reliability variation.
The stabilization of the connection resistance when hot and humid and keep the viewpoint of connection reliability to consider, membranaceous circuit connection material solidifies the Young's modulus of back in the time of 40 ℃ and is preferably 100~3000MPa, more preferably 500~2000MPa.
And then, in order to control curing speed and to pay stability in storage, can add stablizer in this membranaceous circuit connection material.And then also can cooperate weighting agent, tenderizer, promotor, protective agent, tinting material, fire retardant, thixotropic agent, resol, melamine resin etc. in the membranaceous circuit connection material.
When membranaceous circuit connection material contains packing material (filler), can improve connection reliability etc., thus preferred.Packing material is the material with insulativity, as long as its maximum diameter then can use less than the median size of electroconductive particle.With respect to caking agent composition 100 parts by volume, the cooperation ratio of packing material is preferably 5~60 parts by volume.When the cooperation ratio of packing material exceeds 60 parts by volume, have the saturated tendency of effect that reliability improves, during less than 5 parts by volume, have the tendency that the additive effect of weighting agent diminishes.
Membranaceous circuit connection material of the present invention forms membranaceous obtaining by the circuit connection material that will comprise above-mentioned each composition.This membranaceous circuit connection material can followingly obtain: will add solvent etc. to circuit connection material and obtain and the mixed solution that obtains is applied on the support base material, base material such as non-woven fabrics is contained be soaked with above-mentioned mixed solution and carry on support base material, desolventizing etc. and obtaining.
Employed support base material is preferred laminar or membranaceous.In addition, support base material also can be the stacked shape that forms more than two-layer.As support base material, can enumerate polyethylene terephthalate (PET) film, oriented polypropylene (OPP) film, polyethylene (PE) film and polyimide film.Among these films, consider preferred PET film from the raising of dimensional precision and the angle of cost reduction.
Above-mentioned membranaceous circuit connection material also can be used as different not of the same race by the circuit connection material of convered structure of thermal expansivity.Particularly, except the membranaceous circuit connection material of representatives such as anisotropically conducting adhesive film, silverskin, also can be used as the semiconductor element adhesives that CSP represents with bottom stopping composition, LOC adhesive tape etc. with elastomerics, CSP.
(syndeton of circuit block)
Fig. 1 is the fragmentary cross sectional view of an embodiment of expression circuit block syndeton of the present invention.The syndeton 1 of circuit block shown in Figure 1 comprises and is provided with the circuit connecting section 10 that connects them between first circuit block 20 respect to one another and second circuit parts 30, the first circuit blocks 20 and the second circuit parts 30.
First circuit electrode 22 that first circuit block 20 has first circuit substrate 21, forms at the interarea 21a of first circuit substrate 21.The second circuit electrode 32 that second circuit parts 30 have second circuit substrate 31, form at the interarea 31a of second circuit substrate 31.On the interarea 21a of first circuit substrate 21 and/or on the interarea 31a of second circuit substrate 31, according to circumstances also can form insulation layer (not shown).That is, insulation layer is formed between at least one side and circuit connecting section 10 in first circuit block 20 and the second circuit parts 30.
As first and second circuit substrates 21,31, can enumerate the substrate that the material that is composited by organism such as the polyimide base material of inorganicss such as semi-conductor, glass, pottery, TCP, FPC, COF representative, polycarbonate, polyethylene terephthalate, polyethersulfone, Resins, epoxy, acrylic resins, with these inorganicss, organism is made.Consider that from the viewpoint of the cementability of further raising and circuit connecting section 10 at least one side in preferred first and second circuit substrates is by comprising the substrate that the material that is selected from least a material in the group that polyethylene terephthalate, polyethersulfone, Resins, epoxy, acrylic resin, polyimide resin and glass forms forms.
In addition, when forming insulation layer, insulation layer is preferably the layer that comprises at least a material of selecting from the group that silicon nitride, silicone resin, polyimide resin and acrylic resin are formed.Thus, compare with not forming above-mentioned layer, the cementability between first circuit substrate 21 and/or second circuit substrate 31 and the circuit connecting section 10 further improves.
The surface of at least one side in preferred first circuit electrode 22 and the second circuit electrode 32 forms by comprising the material that is selected from least a material in the group that gold and silver, tin, platinum metals and indium-tin-oxide form.Thus, keep circuit electrode 22 or 32 insulativity each other adjacent on the same circuit block 20,30, can further reduce the resistance value between relative circuit electrode 22 and 33 simultaneously.
As first and second circuit blocks 20,30 concrete example, can enumerate for the glass substrate that is formed with circuit electrodes such as ITO of liquid-crystal display or plastic base, printing distributing board, ceramic wiring board, flexible wiring sheet, semiconductor silicon chips etc.As required, these uses capable of being combined.
Circuit connecting section 10 is formed by the cured article of the above-mentioned membranaceous circuit connection material that contains electroconductive particle.Circuit connecting section 10 is made of with the cured article 11 interior electroconductive particles 7 that are dispersed in the caking agent composition the cured article 11 of caking agent composition contained in the circuit connection material.Electroconductive particle 7 in the circuit connecting section 10 not only is configured between relative first circuit electrode 22 and second circuit electrode 32, also is configured in interarea 21a, 31a each other.In the syndeton 1 of circuit block, electroconductive particle 7 and first and second circuit electrodes 22,32 the two directly contact.Thus, first and second circuit electrodes 22,32 are electrically connected by electroconductive particle 7.Therefore, on keeping same circuit block, between adjacent circuit electrode in the insulativity, can fully reduce the connection resistance between first circuit electrode 22 and the second circuit electrode 32.Therefore, the electric current that can carry out reposefully between first and second circuit electrodes 22,32 flows, and can bring into play the function that circuit has fully.In addition, when circuit connecting section 10 did not contain electroconductive particle 7, first circuit electrode 22 was realized being electrically connected by directly contacting with second circuit electrode 32.
Because circuit connecting section 10 is made of the cured article of above-mentioned membranaceous circuit connection material as described later, so the bonding force of 10 pairs of first circuit blocks 20 of circuit connecting section and second circuit parts 30 is very high.
(manufacture method of the syndeton of circuit block)
Fig. 2 is for representing the process picture sheet of an embodiment of the manufacture method of circuit block syndeton of the present invention by fragmentary cross sectional view.
In the present embodiment, at first, prepare above-mentioned first circuit block 20 and membranaceous circuit connection material 40.Membranaceous circuit connection material 40 comprises caking agent composition 5 and electroconductive particle 7, and described caking agent composition 5 contains film formation material, free-radical polymerised compound, the radical polymerization initiator through adding the free free radical of thermogenesis and contains the compound of isocyanate group.
In addition, also can use the circuit connection material that does not contain electroconductive particle 7.At this moment, circuit connection material can be described as NCP (Non Conductive Paste, non-conductive adhesive).On the other hand, the circuit connection material that comprises electroconductive particle 7 can be described as ACP (Anisotropic Conductive Paste, anisotropy conductiving glue).
The thickness of membranaceous circuit connection material 40 is preferably 5~50 μ m.The thickness of membranaceous circuit connection material 40 has the tendency of membranaceous circuit connection material 40 lack of fills between first and second circuit electrodes 22,32 during less than 5 μ m.On the other hand, when exceeding 50 μ m, have the tendency that is difficult to guarantee the conducting between first and second circuit electrodes 22,32.
Then, membranaceous circuit connection material 40 is placed on the face that is formed with circuit electrode 22 of first circuit block 20.Afterwards, with arrow A and the B direction pressurization of membranaceous circuit connection material 40 along Fig. 2 (a), make membranaceous circuit connection material 40 temporarily be connected in first circuit block 20 (Fig. 2 (b)).
The pressure of this moment then is not particularly limited, but is preferably 0.1~30MPa usually as long as in the scope of not damaging circuit block.In addition, but also limit heating edge pressurization, and Heating temperature is the temperature that membranaceous circuit connection material 40 does not solidify basically.Heating temperature is preferably 50~190 ℃ usually.Heating and pressurization were preferably carried out 0.5~120 second.
Then, shown in Fig. 2 (c), the mode according to making second circuit electrode 32 towards first circuit blocks 20 sides is placed on second circuit parts 30 on the membranaceous circuit connection material 40.In addition, membranaceous circuit connection material 40 is close to when arranging on the support base material (not shown), second circuit parts 30 is placed on the membranaceous circuit connection material 40 after peeling off support base material.Afterwards, when heating membranaceous circuit connection material 40, along the arrow A of Fig. 2 (c) and B direction to all pressurizations.In addition, even membranaceous circuit connection material 40 is placed with the original state that is arranged on the support base material, also have the very long serviceable time, and the cementability very high with the circuit block maintenance.
Heating temperature for example is set at 90~200 ℃, and the tie-time for example is set at 1 second~and 10 minutes.These conditions can suitably be selected according to the purposes, membranaceous circuit connection material, the circuit block that use, as required, also can carry out after fixing.Heating temperature when for example, membranaceous circuit connection material contains free-radical polymerised compound is the temperature that radical polymerization initiator can produce free radical.Thus, radical polymerization initiator produces free radical, causes the polymerization of free-radical polymerised compound.
By heating membranaceous circuit connection material 40, membranaceous circuit connection material 40 is solidified making under the very little state of distance between first circuit electrode 22 and the second circuit electrode 32, first circuit block 20 and second circuit parts 30 are securely connected by circuit connecting section 10.
Form circuit connecting section 10 by solidifying membranaceous circuit connection material 40, obtain the syndeton 1 of circuit block shown in Figure 1.In addition, condition of contact can suitably be selected according to the purposes, membranaceous circuit connection material, the circuit block that use.
According to present embodiment, in the syndeton 1 of the circuit block that obtains, can make electroconductive particle 7 and relative first and second circuit electrodes 22,32 the two contact, in the insulativity on keeping same circuit block between adjacent circuit electrode, can fully reduce the connection resistance between relative first and second circuit electrodes 22,32.Because circuit connecting section 10 is made of the cured article of above-mentioned membranaceous circuit connection material, so the bonding force of 10 pairs of first circuit blocks 20 of circuit connecting section and second circuit parts 30 is very high.
More than, preferred implementation of the present invention is illustrated, but the invention is not restricted to this.The present invention can carry out various deformation in the scope that does not break away from its purport.
Embodiment
Below, the present invention specifies based on embodiment, but the present invention is not limited to this.
(manufacturing of electroconductive particle)
It is the layer of 0.2 μ m that the thickness that is formed by nickel is set on the surface of polystyrene particle, so the thickness that the surface setting of this layer that is formed by nickel is formed by gold be 0.04 μ m layer.So obtain the electroconductive particle that median size is 10 μ m.
(modulation of carbamate type acrylate)
In 50 ℃ of heating, stirring and mixing weight-average molecular weight are 800 polycaprolactone glycol 400 mass parts, vinylformic acid-2-hydroxypropyl acrylate 131 mass parts, catalyzer dibutyl tin laurate 0.5 mass parts and stopper hydroquinone monomethyl ether 1.0 mass parts.Then, drip isophorone diisocyanate 222 mass parts, and then the urethane reaction ℃ is carried out in warming while stirring to 80.The transformation efficiency of confirming isocyanate group be 99% or more after, the reduction temperature obtains carbamate type acrylate.
(modulation of polyester urethane resin)
By obtaining polyester polyol as the terephthalic acid of dicarboxylic acid with as the reaction of the propylene glycol of glycol.This polyester polyol is dissolved in the methyl ethyl ketone (MEK) obtains solution.The solution adding that makes is had in the stainless steel autoclave that has well heater of stirrer, thermometer, condenser and vacuum generating device and nitrogen conduit.Then, add in the above-mentioned autoclave specified amount as 4,4 of isocyanic ester '-diphenylmethanediisocyanate, the amount that is 0.02 mass parts with relative polyester polyol 100 mass parts adds the catalyzer dibutyl tin laurate, 75 ℃ of reactions 10 hours, be cooled to 40 ℃.And then, by adding after the piperazine reaction increased chain in 30 minutes, neutralize with triethylamine.
If above-mentioned reacted solution is splashed in the pure water, when then solvent and catalyzer are water-soluble, separate out polyester urethane resin.Afterwards, the polyester urethane resin of separating out with the Vacuumdrier drying.The weight-average molecular weight of measuring polyester urethane resin by gpc analysis is 27000.In addition, when modulating above-mentioned polyester urethane resin, terephthalic acid/propylene glycol/4,4 '-the cooperation mol ratio of diphenylmethanediisocyanate is 1.0/1.3/0.25.
(modulation of phenoxy resin)
With phenoxy resin (Union Carbide Corporation's system, trade(brand)name " PKHC ", weight-average molecular weight: 45000) 50g is dissolved in toluene (110.6 ℃ of boiling points, SP value 8.90)/ethyl acetate (77.1 ℃ of boiling points, SP value 9.10) mass ratio is in 50/50 the mixed solvent, and forming solids component is the solution of 40 quality %.
(modulation of fluorinated polyimide resin)
Preparation has the removable flask of the 1000ml of Dean-Stark recirculation cooler, thermometer, agitator.To the polypropyleneoxide diamine 15.0mmol, 2 that wherein adds as diamine compound, two [4-(4-amino-benzene oxygen) phenyl] the HFC-236fa 105.0mmol of 2-, as the N-N-methyl-2-2-pyrrolidone N-287g of non-proton property polar solvent, stirred 30 minutes down in room temperature (25 ℃).Then, add as can with the toluene 180g of the arene organic solvent of water azeotropic, as tetracarboxylic dianhydride's 4,4 '-the two O-phthalic acid dianhydride 114.0mmol of hexafluoro propylidene, be warming up to 50 ℃, after stirring 1 hour under this temperature, and then be warming up to 160 ℃ and refluxed 3 hours.Lodge in the water and basis weight receptor if confirm the water of theoretical amount, can not see water and flow out, then remove water and toluene in the water and basis weight receptor, be warming up to 180 ℃ of toluene of removing in the reaction soln, obtain the nmp solution of polyimide resin.
The nmp solution of above-mentioned polyimide resin is dropped in the methyl alcohol, and behind the recovery precipitate, pulverizing, drying obtain the fluorinated polyimide resin.The weight-average molecular weight of the fluorinated polyimide resin that obtains is 112000.With above-mentioned fluorinated polyimide resin dissolves in methyl ethyl ketone until being 40 quality %.
With the circuit connection material of (mass parts: solids component converts) the adjusting embodiment of the proportioning shown in following table 2 and the table 3 and comparative example, make membranaceous circuit connection material.
(embodiment 1)
Will be as polyester urethane resin 60 mass parts of film formation material, as above-mentioned carbamate type acrylate 40 mass parts of free-radical polymerised compound and phosphate type acrylate (grease society of common prosperity society system, trade(brand)name " P2M ") 1 mass parts, as methacryloyl based isocyanate 0.5 mass parts that contains the compound of isocyanate group, mix as own ester 5 mass parts of the peroxidation-2 ethyl hexanoic acid uncle of radical polymerization initiator.Then, cooperating disperse phase is the above-mentioned electroconductive particle of 3 volume % to mentioned component 100 parts by volume, is modulated into circuit connection material.Then, with apparatus for coating with this circuit connection material be coated on thickness be 80 μ m, the one side carried out being filmed on the surface-treated PET film.Then, by this being filmed 70 ℃ of warm air dryings 10 minutes, obtaining thickness be 20 μ m membranaceous circuit connection material.
(embodiment 2)
Except replace methacryloyl based isocyanate 0.5 mass parts with hexamethylene diisocyanate 0.5 mass parts, carry out operation similarly to Example 1, obtain membranaceous circuit connection material.
(embodiment 3)
Except replace methacryloyl based isocyanate 0.5 mass parts with γ-isocyanic ester propyl-triethoxysilicane 0.5 mass parts, carry out operation similarly to Example 1, obtain membranaceous circuit connection material.
(embodiment 4)
Except replace methacryloyl based isocyanate 0.5 mass parts with γ-isocyanic ester propyl-triethoxysilicane 0.1 mass parts, carry out operation similarly to Example 1, obtain membranaceous circuit connection material.
(embodiment 5)
Except replace methacryloyl based isocyanate 0.5 mass parts with γ-isocyanic ester propyl-triethoxysilicane 3 mass parts, carry out operation similarly to Example 1, obtain membranaceous circuit connection material.
(embodiment 6)
Except replace methacryloyl based isocyanate 0.5 mass parts with γ-isocyanic ester propyl-triethoxysilicane 5 mass parts, carry out operation similarly to Example 1, obtain membranaceous circuit connection material.
(embodiment 7)
Except replace polyester urethane resin 60 mass parts with phenoxy resin 60 mass parts, carry out operation similarly to Example 5, obtain membranaceous circuit connection material.
(embodiment 8)
Except replace polyester urethane resin 60 mass parts with polyester urethane resin 55 mass parts and fluorinated polyimide resin 5 mass parts, carry out operation similarly to Example 1, obtain membranaceous circuit connection material.
(comparative example 1)
Except not using the methacryloyl based isocyanate, carry out operation similarly to Example 1, obtain membranaceous circuit connection material.
(comparative example 2)
Except replace methacryloyl based isocyanate 0.5 mass parts with γ-isocyanic ester propyl-triethoxysilicane 0.05 mass parts, carry out operation similarly to Example 1, obtain membranaceous circuit connection material.
(comparative example 3)
Except replace methacryloyl based isocyanate 0.5 mass parts with γ-isocyanic ester propyl-triethoxysilicane 7.5 mass parts, carry out operation similarly to Example 1, obtain membranaceous circuit connection material.
Table 2
Table 3
Figure BSA00000318273600222
The manufacturing of the syndeton of<circuit block 〉
Prepare three layers of flexible base, board 1 (FPC substrate 1), this substrate is that 500 of the copper circuit distributions of live width 50 μ m, spacing 100 μ m and thickness 18 μ m are formed on polyimide film A (emerging product society of space portion system across bond layer, trade(brand)name " Upilex ", thickness 75 μ m) upward obtain.In addition, prepare two sheets of flexible substrate 2 (FPC substrates 2), this substrate is that 500 of copper circuit distributions with live width 50 μ m, spacing 100 μ m and thickness 8 μ m are formed directly into polyimide film B (emerging product society of space portion system, trade(brand)name " Upilex ", thickness 25 μ m) and go up and obtain.And then, prepare glass substrate, this substrate is that 500 of chromium circuit layouts with live width 50 μ m, spacing 100 μ m and thickness 0.4 μ m are formed directly into glass (Corning Incorporated's system, trade(brand)name " #1737 ") and go up and obtain.
Then, the membranaceous circuit connection material that configuration obtains as mentioned above between above-mentioned each FPC substrate and glass substrate.Afterwards, use hot pressing device (type of heating: permanent pattern of fever, Dongli Engineering Co., Ltd's system) under 160 ℃, the condition of 3MPa, to carry out the heating and pressurizing in 10 seconds along their stacked direction.So make the syndeton of circuit block, its cured article by circuit connection material is electrically connected FPC substrate and glass substrate with wide 2mm.With the syndeton of the circuit block made like this as initial stage evaluating characteristics sample.
[evaluation of cementability]
As follows, by the outward appearance that is connected in the syndeton of the connection resistance between the circuit in the syndeton of measuring the circuit block of making as mentioned above and bonding strength and observation circuit block, estimate cementability.In addition, for initial stage evaluating characteristics sample, with connect resistance, bonding strength and be connected outward appearance all good sample as the syndeton of the very excellent circuit block of cementability.
The mensuration of<connection resistance 〉
With volt ohm-milliammeter (Advantest corporate system, trade(brand)name: TR6848) measure connection resistance, and represent with the mean value (x+3 σ) of 150 of the resistance between the circuit of adjacency.The results are shown in table 4 and 5.Wherein, table 4 is the evaluation result that the FPC2/ glass substrate connects sample for the evaluation result of FPC1/ glass substrate connection sample, table 5.
The mensuration of<bonding strength 〉
Bonding strength is peeled off method according to 90 degree of JIS-Z0237 and is measured.The determinator of bonding strength uses TENSILON UTM-4 (peeling rate 50mm/min, 25 ℃, Japan BALDWIN corporate system).The results are shown in table 4 and 5.
The observation of<connection outward appearance 〉
The syndeton of circuit block is put into the constant temperature and humid test device 250 hours that 85 ℃, relative humidity are 85%RH, carry out humidity test.Afterwards, from the glass substrate side with microscopic examination bonding after at once with humidity test after outward appearance.When peeling off between the interface, gap between circuit connecting section and circuit, the insulativity between circuit lowers greatly, thereby is judged to be NG.The results are shown in table 4 and 5.
[evaluation of serviceable time]
To put into vacuum-packed material respectively by the membranaceous circuit connection material that embodiment and comparative example obtain, 40 ℃ place 5 days after, with the above-mentioned syndeton of similarly making circuit block, estimate as the serviceable time and to use sample.Afterwards, use sample for the serviceable time evaluation, also with the above-mentioned cementability of estimating the samely.The results are shown in table 4 and 5.In the evaluation of cementability, estimate that to compare variation with each characteristic of sample and initial stage evaluating characteristics with each characteristic of sample less the serviceable time, the initial stage of keeping is during characteristic, and it is long to be judged to be the serviceable time.
Table 4
Figure BSA00000318273600241
Table 5
Figure BSA00000318273600251
By table 4 and 5 as can be known, no matter the connection resistance at initial stage is embodiment or comparative example, be about 1 Ω.In addition, no matter the bonding strength at initial stage is embodiment or comparative example, be more than the 7N/cm.Particularly among the embodiment 5 and 6, along with the use level increase of the compound that contains isocyanate group, bonding strength uprises.In addition, among the embodiment 8, by using fluorinated polyimide, the bonding strength that the FPC2/ glass substrate connects sample raises.
Use embodiment 1~3,5~8 and comparative example 3 in obtain membranaceous circuit connection material the time, all do not observe and peel off.In addition, the circuit connection material that embodiment 4 obtains is owing to the amount of the compound that contains isocyanate group is few, and the FPC1/ glass substrate after humidity test connects to observe on a small quantity in the sample to be peeled off, but belongs to no problem in the use rank.Relative therewith, at the comparative example 1 of the compound that does not contain isocyanate group, contain in the use level comparative example 2 still less of compound of isocyanate group, peel off after the humidity test.
As mentioned above, the bonding strength of embodiment 1~8 and comparative example 3, to be connected resistance all good with the initial stage characteristic that is connected outward appearance, confirms to demonstrate very high cementability.
In addition, when using the membranaceous circuit connection material after 40 ℃ are placed 5 days, in embodiment 1~8 and the comparative example 1,2, all keeping the cementability identical with the initial stage characteristic, confirming that the serviceable time is long.On the other hand, the use level that contains the compound of isocyanate group is in the comparative example 3 of 7.5 mass parts, rises to more than the twice of initial stage connection resistance at the connection resistance of 40 ℃ of placements after 5 days, and the serviceable time is short as can be known.
As known from the above, the membranaceous circuit connection material of embodiment 1~8 is compared with the membranaceous circuit connection material of comparative example 1~3, demonstrates very high cementability, and has the very long serviceable time.Thus, according to membranaceous circuit connection material of the present invention, no matter confirmed material to which kind of circuit block, all demonstrate very high cementability, and have the very long serviceable time.
In addition as can be known, membranaceous circuit connection material of the present invention not only has the very long serviceable time, and having good especially cementability for following such circuit block, described circuit block is that the circuit substrate of support circuit electrode is selected from polyethylene terephthalate by comprising, polyethersulfone, Resins, epoxy, acrylic resin, the circuit block that the material of at least a material in polyimide resin and the glass forms, and the surface coated of circuit substrate or be attached with and be selected from silicon nitride, silicone resin, the circuit block of at least a material in polyimide resin and the acrylic resin.
The possibility of utilizing on the industry
According to the present invention, no matter can provide a kind of material to which kind of circuit block all to demonstrate very long membranaceous circuit connection material of very high cementability and serviceable time and the syndeton of using the circuit block of these membranaceous circuit connection materials.

Claims (39)

1. membranaceous circuit connection material, it is, be used for to be formed with at the interarea of first circuit substrate membranaceous circuit connection material that second circuit parts that first circuit block of first circuit electrode and interarea at the second circuit substrate be formed with the second circuit electrode are electrically connected under described first state relative with described second circuit electrode
Contain film formation material, free-radical polymerised compound, the radical polymerization initiator through adding the free free radical of thermogenesis and have the compound that contains isocyanate group of alkoxysilane group,
With respect to total 100 mass parts of described film formation material and described free-radical polymerised compound, the described compound that contains isocyanate group with alkoxysilane group to contain proportional be 0.09~5 mass parts.
2. membranaceous circuit connection material according to claim 1 wherein, further contains fluorinated organic compound.
3. membranaceous circuit connection material according to claim 1, wherein, it is the organic compound that has amino-formate bond in the main chain more than 10000 that described film formation material comprises weight-average molecular weight.
4. membranaceous circuit connection material according to claim 3, wherein, the organic compound that has amino-formate bond in the described main chain has ester bond.
5. membranaceous circuit connection material according to claim 3, wherein, the organic compound that has amino-formate bond in the described main chain obtains by the reaction of polyester polyol and vulcabond.
6. membranaceous circuit connection material according to claim 5, wherein, described polyester polyol obtains by the reaction of dicarboxylic acid and glycol.
7. membranaceous circuit connection material according to claim 5, wherein, described vulcabond is aromatic diisocyanate, alicyclic diisocyanate or aliphatic diisocyanate.
8. membranaceous circuit connection material according to claim 3, wherein, the weight-average molecular weight that has the organic compound of amino-formate bond in the described main chain is more than 10000 below 200000.
9. membranaceous circuit connection material according to claim 1, wherein, described free-radical polymerised compound is (methyl) acrylic compound.
10. membranaceous circuit connection material according to claim 9, wherein, described free-radical polymerised compound contains phosphate type (methyl) acrylate.
11. membranaceous circuit connection material according to claim 1, wherein, described radical polymerization initiator contains organo-peroxide and/or azo-compound.
12. membranaceous circuit connection material according to claim 1, wherein, described alkoxysilane group is Trimethoxy silane base or triethoxysilicane alkyl.
13. membranaceous circuit connection material according to claim 1, wherein, with respect to total 100 mass parts of described film formation material and described free-radical polymerised compound, the described compound that contains isocyanate group with alkoxysilane group to contain proportional be 0.1~5 mass parts.
14. membranaceous circuit connection material according to claim 1, wherein, with respect to total 100 mass parts of described film formation material and described free-radical polymerised compound, the described compound that contains isocyanate group with alkoxysilane group to contain proportional be 0.5~3 mass parts.
15. according to any one described membranaceous circuit connection material in the claim 1~14, wherein, further contain electroconductive particle.
16. membranaceous circuit connection material according to claim 15, wherein, described electroconductive particle be with dielectric glass, pottery or plastics be the insulativity particle of principal constituent as nuclear, on the surface of described nuclear, be the particle that the layer of principal constituent is covered and forms in order to metal or carbon.
17. according to any one described membranaceous circuit connection material in the claim 1~14, wherein, described membranaceous circuit connection material is the anisotropic conductive caking agent.
18. the syndeton of a circuit block, it has first circuit block, second circuit parts and circuit connecting section, described first circuit block is for being formed with the circuit block of first circuit electrode at the interarea of first circuit substrate, the circuit block that described second circuit parts are formed with the second circuit electrode and dispose according to the mode that makes described second circuit electrode with the relative configuration of described first circuit electrode for the interarea at the second circuit substrate, described circuit connecting section is arranged between described first circuit substrate and the described second circuit substrate, according to making described first to be connected described first circuit block and described second circuit parts with mode that described second circuit electrode is electrically connected
Described circuit connecting section is the cured article of any one described membranaceous circuit connection material in the claim 1~17.
19. the syndeton of circuit block according to claim 18, wherein, described first and described second circuit electrode at least one side's surface formed by the material that comprises at least a material in the group that the metal that is selected from gold and silver, tin, platinum family and indium-tin-oxide form.
20. the syndeton according to claim 18 or 19 described circuit blocks, wherein, described first and described second circuit substrate at least one side by comprising the substrate that the material that is selected from least a material in the group that polyethylene terephthalate, polyethersulfone, Resins, epoxy, acrylic resin, polyimide resin and glass forms forms.
21. the syndeton of circuit block according to claim 18, wherein, described first and described second circuit parts at least one side and described circuit connecting section between, be formed with and comprise the layer that is selected from least a material in the group that silicon nitride, silicone resin, polyimide resin and acrylic resin form.
22. the manufacture method of the syndeton of a circuit block, it comprises following operation:
To be formed with first circuit block of first circuit electrode at the interarea of first circuit substrate disposes according to the mode that makes described first circuit electrode with the relative configuration of described second circuit electrode with the second circuit parts that interarea at the second circuit substrate is formed with the second circuit electrode, make in the claim 1~17 any one described membranaceous circuit connection material between between them, under this state, to all heating and pressurization, be connected described first circuit block and described second circuit parts according to the mode that described first circuit electrode and described second circuit electrode are electrically connected.
23. bonding film is as the application of circuit connection material, described circuit connection material is used for being formed with at the interarea of first circuit substrate second circuit parts that first circuit block of first circuit electrode and interarea at the second circuit substrate be formed with the second circuit electrode and is electrically connected under described first state relative with described second circuit electrode
Described bonding film contains film formation material, free-radical polymerised compound, the radical polymerization initiator through adding the free free radical of thermogenesis and has the compound that contains isocyanate group of alkoxysilane group,
With respect to total 100 mass parts of described film formation material and described free-radical polymerised compound, the described compound that contains isocyanate group with alkoxysilane group to contain proportional be 0.09~5 mass parts.
24. application according to claim 23, wherein, described bonding film further contains fluorinated organic compound.
25. application according to claim 23, wherein, it is the organic compound that has amino-formate bond in the main chain more than 10000 that described film formation material comprises weight-average molecular weight.
26. application according to claim 25, wherein, the organic compound that has amino-formate bond in the described main chain has ester bond.
27. application according to claim 25, wherein, the organic compound that has amino-formate bond in the described main chain obtains by the reaction of polyester polyol and vulcabond.
28. application according to claim 27, wherein, described polyester polyol obtains by the reaction of dicarboxylic acid and glycol.
29. application according to claim 27, wherein, described vulcabond is aromatic diisocyanate, alicyclic diisocyanate or aliphatic diisocyanate.
30. application according to claim 25, wherein, the weight-average molecular weight that has the organic compound of amino-formate bond in the described main chain is more than 10000 below 200000.
31. application according to claim 23, wherein, described free-radical polymerised compound is (methyl) acrylic compound.
32. application according to claim 31, wherein, described free-radical polymerised compound contains phosphate type (methyl) acrylate.
33. application according to claim 23, wherein, described radical polymerization initiator contains organo-peroxide and/or azo-compound.
34. application according to claim 23, wherein, described alkoxysilane group is Trimethoxy silane base or triethoxysilicane alkyl.
35. application according to claim 23, wherein, with respect to total 100 mass parts of described film formation material and described free-radical polymerised compound, the described compound that contains isocyanate group with alkoxysilane group to contain proportional be 0.1~5 mass parts.
36. application according to claim 23, wherein, with respect to total 100 mass parts of described film formation material and described free-radical polymerised compound, the described compound that contains isocyanate group with alkoxysilane group to contain proportional be 0.5~3 mass parts.
37. according to any one described application in the claim 23~36, wherein, described bonding film further contains electroconductive particle.
38. according to the described application of claim 37, wherein, described electroconductive particle be with dielectric glass, pottery or plastics be the insulativity particle of principal constituent as nuclear, on the surface of described nuclear, be the particle that the layer of principal constituent is covered and forms in order to metal or carbon.
39. according to any one described application in the claim 23~36, wherein, described bonding film is anisotropic conductive.
CN2010105189647A 2007-05-09 2008-05-07 Film-like circuit connecting material and connection structure for circuit member Active CN101982515B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007124436 2007-05-09
JP2007-124436 2007-05-09

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
CN2008800141483A Division CN101675715B (en) 2007-05-09 2008-05-07 Film-like circuit connecting material and connection structure for circuit member

Publications (2)

Publication Number Publication Date
CN101982515A CN101982515A (en) 2011-03-02
CN101982515B true CN101982515B (en) 2013-07-03

Family

ID=40002196

Family Applications (3)

Application Number Title Priority Date Filing Date
CN2008800141483A Active CN101675715B (en) 2007-05-09 2008-05-07 Film-like circuit connecting material and connection structure for circuit member
CN2011100931584A Active CN102199404B (en) 2007-05-09 2008-05-07 Film-like circuit connecting material and connection structure for circuit member
CN2010105189647A Active CN101982515B (en) 2007-05-09 2008-05-07 Film-like circuit connecting material and connection structure for circuit member

Family Applications Before (2)

Application Number Title Priority Date Filing Date
CN2008800141483A Active CN101675715B (en) 2007-05-09 2008-05-07 Film-like circuit connecting material and connection structure for circuit member
CN2011100931584A Active CN102199404B (en) 2007-05-09 2008-05-07 Film-like circuit connecting material and connection structure for circuit member

Country Status (5)

Country Link
JP (1) JP4941554B2 (en)
KR (1) KR101100507B1 (en)
CN (3) CN101675715B (en)
TW (2) TW200913808A (en)
WO (1) WO2008139996A1 (en)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2012014563A1 (en) * 2010-07-26 2012-02-02 日立化成工業株式会社 Adhesive composition, connection structure, connection structure manufacturing method and application of adhesive composition
JP5855459B2 (en) * 2010-07-26 2016-02-09 日立化成株式会社 Circuit member connection structure
US9412717B2 (en) * 2011-11-04 2016-08-09 Taiwan Semiconductor Manufacturing Company, Ltd. Apparatus and methods for molded underfills in flip chip packaging
JP6398570B2 (en) * 2013-10-09 2018-10-03 日立化成株式会社 Circuit connection material, circuit member connection structure, and method of manufacturing circuit member connection structure
JP2015098575A (en) * 2013-10-16 2015-05-28 日立化成株式会社 Adhesive composition and connection body
JP6417675B2 (en) * 2014-03-03 2018-11-07 日立化成株式会社 Adhesive composition and connector
KR102397238B1 (en) * 2015-06-10 2022-05-11 쇼와덴코머티리얼즈가부시끼가이샤 Adhesive composition and connector
WO2017078087A1 (en) * 2015-11-04 2017-05-11 日立化成株式会社 Adhesive composition and structure
JP7149292B2 (en) * 2017-05-31 2022-10-06 ダウ グローバル テクノロジーズ エルエルシー Solvent-based adhesive composition
CN107613675A (en) * 2017-08-10 2018-01-19 维沃移动通信有限公司 A kind of compression method of flexible PCB, surface-mounted integrated circuit and mobile terminal
CN107946677A (en) * 2017-12-15 2018-04-20 安徽中科中涣防务装备技术有限公司 A kind of safe lithium battery core flame retarding construction
DE102018206632A1 (en) * 2018-04-27 2019-10-31 Tesa Se Latent reactive adhesive film
JP2018184607A (en) * 2018-06-27 2018-11-22 日立化成株式会社 Adhesive composition and connection body

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4943625A (en) * 1987-09-09 1990-07-24 Ems-Inventa Ag Adhesive copolyamide composition based on phenylene containing diamine
CN1706008A (en) * 2003-07-04 2005-12-07 奈得可股份有限公司 Coated conductive particle, conductive material, anisotropic conductive adhesive and anisotropic conductive junction structure

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2578133B2 (en) * 1987-10-15 1997-02-05 サンスター技研株式会社 Polyurethane adhesive
JP3538861B2 (en) * 1993-09-24 2004-06-14 綜研化学株式会社 Anisotropic conductive pressure-sensitive adhesive sheet
JP2002204052A (en) * 2000-12-28 2002-07-19 Hitachi Chem Co Ltd Circuit connecting material and method for connecting circuit terminal using the same as well as connecting structure
JP2003064331A (en) * 2001-08-30 2003-03-05 Hitachi Chem Co Ltd Thermally cross-linking type circuit-connecting material and method for producing circuit board by using the same
JP4649815B2 (en) * 2002-03-27 2011-03-16 日立化成工業株式会社 Adhesive composition for circuit connection and circuit connection structure using the same
JP3858740B2 (en) * 2002-03-27 2006-12-20 日立化成工業株式会社 Adhesive composition for circuit connection and circuit connection structure using the same
JP2005255706A (en) * 2004-03-09 2005-09-22 Lintec Corp Hardenable pressure-sensitive adhesive composition, sheet for manufacturing optical disc and optical disc
JP2005347273A (en) * 2005-06-06 2005-12-15 Hitachi Chem Co Ltd Thermally cross-linking type circuit-connecting material and method for producing circuit board by using the same
CN102277091A (en) * 2005-10-18 2011-12-14 日立化成工业株式会社 Adhesive composition, circuit connecting material, connection structure of circuit connectors and semiconductor devices

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4943625A (en) * 1987-09-09 1990-07-24 Ems-Inventa Ag Adhesive copolyamide composition based on phenylene containing diamine
CN1706008A (en) * 2003-07-04 2005-12-07 奈得可股份有限公司 Coated conductive particle, conductive material, anisotropic conductive adhesive and anisotropic conductive junction structure

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
JP特开2003-277694A 2003.10.02

Also Published As

Publication number Publication date
CN102199404A (en) 2011-09-28
TW201130940A (en) 2011-09-16
WO2008139996A1 (en) 2008-11-20
CN101982515A (en) 2011-03-02
JP4941554B2 (en) 2012-05-30
TWI378751B (en) 2012-12-01
TWI378745B (en) 2012-12-01
CN101675715B (en) 2011-06-08
KR101100507B1 (en) 2011-12-29
CN101675715A (en) 2010-03-17
CN102199404B (en) 2013-12-04
TW200913808A (en) 2009-03-16
KR20090086465A (en) 2009-08-12
JPWO2008139996A1 (en) 2010-08-05

Similar Documents

Publication Publication Date Title
CN101982515B (en) Film-like circuit connecting material and connection structure for circuit member
CN102533136B (en) Adhesive composition, and connection structure for circuit member
CN102732207B (en) Circuit connecting material, connection structure of circuit member, and method for manufacturing connection structure of circuit member
CN101897245B (en) Circuit connecting material and structure for connecting circuit member
CN101802118B (en) Adhesive composition and bonded body
CN103589384B (en) The manufacture method of adhesive composite, connection structural bodies, connection structural bodies and the application of adhesive composite
CN102559071A (en) Adhesive composition, film-like adhesive, and connection structure for circuit member
CN102417794B (en) Circuit connecting material, connecting method, connecting structure, manufacturing method and use thereof
CN103764776A (en) Adhesive composition and connection body
CN101955736B (en) Adhesive composition and connecting structure
CN102355793A (en) Adhesive composition, circuit connecting material, connection structure of circuit member, and semiconductor device
CN103351838A (en) Adhesive composition, connection structure, method for producing connection structure, and use of adhesive composition
CN104169389A (en) Circuit connection material, circuit connection structure, adhesive film, and wound body
CN102206480A (en) Application of circuit-connecting material as circuit-connecting material
CN102399526A (en) Adhesive composition, circuit connection structure, semiconductor device, and solar cell module
CN103814100A (en) Adhesive composition, adhesive film, adhesive sheet, circuitry connector, method for connecting circuitry member, use of adhesive composition, use of adhesive film, and use of adhesive sheet
CN104559902A (en) Circuit connecting material, connection structure of circuit members, and method for manufacturing connection structure of circuit member
CN1329470C (en) Binding composition, electric circuit connecting material, electric component connecting structure and production thereof
CN104342080A (en) Adhesive composition, circuit connecting material, circuit connection structure, and adhesive sheet
WO2023228729A1 (en) Adhesive composition, circuit connection material, and connection body
JP6969165B2 (en) An anisotropic conductive adhesive composition, an anisotropic conductive film, and a connecting structure.
CN107636107A (en) Adhesive composite and connector

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C53 Correction of patent of invention or patent application
CB02 Change of applicant information

Address after: Japan Tokyo Chiyoda Marunouchi yidingmu 9 No. 2

Applicant after: HITACHI CHEMICAL Co.,Ltd.

Address before: Tokyo, Japan

Applicant before: HITACHI CHEMICAL Co.,Ltd.

COR Change of bibliographic data

Free format text: CORRECT: APPLICANT; FROM: HITACHI CHEMICAL CO. LTD. TO: HITACHI CHEMICAL CO., LTD.

C14 Grant of patent or utility model
GR01 Patent grant
CP01 Change in the name or title of a patent holder
CP01 Change in the name or title of a patent holder

Address after: Japan Tokyo Chiyoda Marunouchi yidingmu 9 No. 2

Patentee after: Lishennoco Co.,Ltd.

Address before: Japan Tokyo Chiyoda Marunouchi yidingmu 9 No. 2

Patentee before: HITACHI CHEMICAL Co.,Ltd.