JPWO2008139996A1 - Film-like circuit connection material and circuit member connection structure - Google Patents

Film-like circuit connection material and circuit member connection structure Download PDF

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Publication number
JPWO2008139996A1
JPWO2008139996A1 JP2009514131A JP2009514131A JPWO2008139996A1 JP WO2008139996 A1 JPWO2008139996 A1 JP WO2008139996A1 JP 2009514131 A JP2009514131 A JP 2009514131A JP 2009514131 A JP2009514131 A JP 2009514131A JP WO2008139996 A1 JPWO2008139996 A1 JP WO2008139996A1
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Prior art keywords
circuit
film
connection
circuit member
mass
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JP2009514131A
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JP4941554B2 (en
Inventor
日臣 望月
日臣 望月
有福 征宏
征宏 有福
和良 小島
和良 小島
小林 宏治
宏治 小林
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Resonac Corporation
Showa Denko Materials Co Ltd
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Resonac Corporation
Hitachi Chemical Co Ltd
Showa Denko Materials Co Ltd
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Publication of JPWO2008139996A1 publication Critical patent/JPWO2008139996A1/en
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Abstract

第1の回路基板の主面上に第1の回路電極が形成された第1の回路部材と、第2の回路基板の主面上に第2の回路電極が形成された第2の回路部材とを、第1及び第2の回路電極を対向させた状態で電気的に接続するためのフィルム状回路接続材料であって、フィルム形成材と、ラジカル重合性化合物と、加熱により遊離ラジカルを発生するラジカル重合開始剤と、イソシアネート基含有化合物とを含有し、イソシアネート基含有化合物の含有割合が、フィルム形成材とラジカル重合性化合物との合計100質量部に対して0.09〜5質量部であるフィルム状回路接続材料。A first circuit member having a first circuit electrode formed on the main surface of the first circuit board, and a second circuit member having a second circuit electrode formed on the main surface of the second circuit board Is a film-like circuit connecting material for electrically connecting the first and second circuit electrodes facing each other, and generates free radicals by heating with a film-forming material, a radical polymerizable compound, and heating. A radical polymerization initiator and an isocyanate group-containing compound, and the content ratio of the isocyanate group-containing compound is 0.09 to 5 parts by mass with respect to 100 parts by mass in total of the film-forming material and the radical polymerizable compound. A film-like circuit connection material.

Description

本発明は、フィルム状回路接続材料及び回路部材の接続構造に関する。   The present invention relates to a film-like circuit connection material and a circuit member connection structure.

近年、半導体や液晶ディスプレイなどの分野で電子部品を固定したり、回路接続を行ったりするために各種の接着材料が使用されている。これらの用途では、ますます高密度化、高精細化が進み、接着剤にも高い接着力や信頼性が求められている。   In recent years, various adhesive materials have been used for fixing electronic components and making circuit connections in fields such as semiconductors and liquid crystal displays. In these applications, higher density and higher definition are required, and high adhesive strength and reliability are required for adhesives.

特に、液晶ディスプレイとTCPとの接続、FPCとTCPとの接続、又はFPCとプリント配線板との接続には接着剤中に導電性粒子を分散させた異方導電性接着剤が回路接続材料として使用されている。また、最近では、半導体シリコンチップを基板に実装する場合でも、従来のワイヤーボンドに代えて、半導体シリコンチップをフェイスダウンで基板に直接実装する、いわゆるフリップチップ実装が行われており、ここでも異方導電性接着剤の適用が開始されている。   In particular, an anisotropic conductive adhesive in which conductive particles are dispersed in an adhesive is used as a circuit connection material for connection between a liquid crystal display and TCP, connection between an FPC and TCP, or connection between an FPC and a printed wiring board. in use. Recently, even when a semiconductor silicon chip is mounted on a substrate, so-called flip chip mounting, in which the semiconductor silicon chip is directly mounted on the substrate face down, is being used instead of the conventional wire bond. Application of a conductive adhesive has been started.

さらに、近年、精密電子機器の分野では、回路の高密度化が進んでおり、電極幅及び電極間隔が極めて狭くなっている。このため、従来のエポキシ樹脂系を用いた回路接続材料の接続条件では、配線の脱落、剥離、位置ずれが生じ易くなっている。   Furthermore, in recent years, in the field of precision electronic equipment, the density of circuits has been increasing, and the electrode width and electrode interval have become extremely narrow. For this reason, under the connection conditions of the circuit connection material using a conventional epoxy resin system, the wiring is easily dropped, peeled off, and misaligned.

また、生産効率向上のために接続時間の短縮化が望まれており、10秒以下で接続できる回路接続材料が求められている。そこで、低温速硬化性に優れ、かつ、可使時間が長い電気・電子用の回路接続材料が開発されている(例えば、特許文献1参照)。
特開平11−97825号公報
In addition, shortening of the connection time is desired in order to improve production efficiency, and a circuit connection material that can be connected in 10 seconds or less is demanded. Therefore, an electric / electronic circuit connection material that is excellent in low-temperature fast-curing property and has a long pot life has been developed (see, for example, Patent Document 1).
JP-A-11-97825

しかしながら、上記回路接続材料は、接続する回路部材の材質により接着強度が異なる。特に、回路部材表面が窒化シリコン、シリコーン樹脂又はポリイミド樹脂でコーティングされていたり、これらの樹脂が回路部材表面に付着していたりする場合、接着強度が低下する傾向にある。そこで、回路部材の材質によらず接着性に優れ、かつ、十分に長い可使時間を有する回路接続材料が望まれている。   However, the adhesive strength of the circuit connecting material varies depending on the material of the circuit member to be connected. In particular, when the surface of the circuit member is coated with silicon nitride, silicone resin, or polyimide resin, or when these resins are attached to the surface of the circuit member, the adhesive strength tends to decrease. Therefore, there is a demand for a circuit connecting material that is excellent in adhesiveness regardless of the material of the circuit member and has a sufficiently long pot life.

本発明は、上記事情に鑑みてなされたものであり、回路部材の材質によらず十分に高い接着性を示し、かつ、十分に長い可使時間を有するフィルム状回路接続材料及びこれを用いた回路部材の接続構造を提供することを目的とする。   The present invention has been made in view of the above circumstances, and uses a film-like circuit connection material that exhibits sufficiently high adhesiveness regardless of the material of the circuit member and has a sufficiently long pot life, and the same. It aims at providing the connection structure of a circuit member.

本発明は、第1の回路基板の主面上に第1の回路電極が形成された第1の回路部材と、第2の回路基板の主面上に第2の回路電極が形成された第2の回路部材とを、第1及び第2の回路電極を対向させた状態で電気的に接続するためのフィルム状回路接続材料であって、フィルム形成材と、ラジカル重合性化合物と、加熱により遊離ラジカルを発生するラジカル重合開始剤と、イソシアネート基含有化合物とを含有し、イソシアネート基含有化合物の含有割合が、フィルム形成材とラジカル重合性化合物との合計100質量部に対して0.09〜5質量部であるフィルム状回路接続材料を提供する。   The present invention provides a first circuit member in which a first circuit electrode is formed on a main surface of a first circuit board, and a second circuit electrode in which a second circuit electrode is formed on a main surface of a second circuit board. 2 is a film-like circuit connecting material for electrically connecting the circuit member 2 with the first and second circuit electrodes facing each other, and the film forming material, the radical polymerizable compound, and heating It contains a radical polymerization initiator that generates free radicals and an isocyanate group-containing compound, and the content ratio of the isocyanate group-containing compound is 0.09 to 100 parts by mass with respect to a total of 100 parts by mass of the film-forming material and the radical polymerizable compound. A film-like circuit connecting material having 5 parts by mass is provided.

上記構成を備えることにより、本発明のフィルム状回路接続材料は、回路部材の材質によらず十分に高い接着性を示し、かつ、十分に長い可使時間を有するものとなる。このような効果が発現できる理由は定かではないが、本発明者らは、以下のように推測している。   By providing the said structure, the film-form circuit connection material of this invention shows sufficiently high adhesiveness irrespective of the material of a circuit member, and has a sufficiently long pot life. The reason why such an effect can be manifested is not clear, but the present inventors presume as follows.

通常、回路接続材料の可使時間を長くするためには、回路接続材料の反応性を制御する必要がある。しかしながら、回路接続材料の反応性を制御してしまうと、被着体の種類によっては十分な接着性を示し難くなる傾向がある。一方、上記イソシアネート基含有化合物は、回路接続時の温度条件下では反応性に優れるものの、それより低い温度下では安定であると考えられる。そこで、本発明のフィルム状回路接続材料は、所定量のイソシアネート基含有化合物を上述した他の成分と共に含有することにより、良好な接着性と十分に長い可使時間とを両立できたものと、考えられる。   Usually, in order to lengthen the pot life of the circuit connecting material, it is necessary to control the reactivity of the circuit connecting material. However, if the reactivity of the circuit connecting material is controlled, depending on the type of adherend, there is a tendency that sufficient adhesion cannot be exhibited. On the other hand, although the said isocyanate group containing compound is excellent in the reactivity under the temperature conditions at the time of circuit connection, it is thought that it is stable under the temperature lower than it. Therefore, the film-like circuit connecting material of the present invention can achieve both good adhesiveness and a sufficiently long pot life by containing a predetermined amount of the isocyanate group-containing compound together with the other components described above, Conceivable.

上記フィルム状回路接続材料は、含フッ素有機化合物を含有することが好ましい。このようなフィルム状回路接続材料は、接着性がより一層向上すると共に、転写性にも優れるという効果を奏する。   The film-like circuit connecting material preferably contains a fluorine-containing organic compound. Such a film-like circuit connecting material has an effect that adhesiveness is further improved and transferability is also excellent.

また、本発明のフィルム状回路接続材料は、フィルム形成材として、重量平均分子量10000以上のウレタン結合を有する有機化合物を含むことが好ましい。これにより、フィルム状回路接続材料の柔軟性が向上し、各種回路部材との接着性に優れるという本発明の効果を一層有効に発揮することができる。   Moreover, it is preferable that the film-form circuit connection material of this invention contains the organic compound which has a urethane bond of a weight average molecular weight 10,000 or more as a film formation material. Thereby, the softness | flexibility of a film-form circuit connection material improves and the effect of this invention that it is excellent in adhesiveness with various circuit members can be exhibited more effectively.

本発明の回路接続材料は、導電性粒子を更に含有することが好ましい。これにより、回路接続材料はそれ自体導電性を容易に有することができる。そのため、この回路接続材料は、回路電極や半導体等の電気工業や電子工業の分野において導電性接着剤として用いることができるようになる。更に、この場合、回路接続材料が導電性を有するため、硬化後の接続抵抗をより低くすることが可能となる。   The circuit connection material of the present invention preferably further contains conductive particles. As a result, the circuit connecting material itself can easily have conductivity. Therefore, this circuit connecting material can be used as a conductive adhesive in the fields of electric industry and electronic industry such as circuit electrodes and semiconductors. Furthermore, in this case, since the circuit connection material has conductivity, the connection resistance after curing can be further reduced.

本発明は、第1の回路基板の主面上に第1の回路電極が形成された第1の回路部材と、第2の回路基板の主面上に第2の回路電極が形成され、第2の回路電極が第1の回路電極と対向配置されるように配置された第2の回路部材と、第1の回路基板と第2の回路基板との間に設けられ、第1及び第2の回路電極が電気的に接続されるように第1の回路部材と第2の回路部材とを接続する回路接続部とを備えた回路部材の接続構造であって、回路接続部が、上述のフィルム状回路接続材料の硬化物によって形成されている回路部材の接続構造を提供する。   According to the present invention, a first circuit member having a first circuit electrode formed on the main surface of the first circuit board, a second circuit electrode formed on the main surface of the second circuit board, A second circuit member disposed so that the two circuit electrodes are opposed to the first circuit electrode, and the first circuit board and the second circuit board. A circuit member connection structure comprising: a circuit connection portion that connects the first circuit member and the second circuit member so that the circuit electrodes of the first and second circuit members are electrically connected to each other. Provided is a circuit member connection structure formed of a cured product of a film-like circuit connection material.

このような回路部材の接続構造は、回路接続部が接着性に十分に優れ、可使時間が十分に長い本発明のフィルム状回路接続材料の硬化物によって形成されているため、同一回路部材上で隣り合う回路電極間の絶縁性を維持しつつ、対向する回路電極間の抵抗値を低減させることができる。   Such a circuit member connection structure is formed by a cured product of the film-like circuit connection material of the present invention, in which the circuit connection portion is sufficiently excellent in adhesiveness and has a sufficiently long pot life. The resistance value between the circuit electrodes facing each other can be reduced while maintaining the insulation between the adjacent circuit electrodes.

本発明の回路部材の接続構造において、第1及び第2の回路電極のうち少なくとも一方は、その表面が金、銀、錫、白金族の金属及びインジウム−錫酸化物からなる群より選ばれる少なくとも一種を含む材料からなることが好ましい。このような回路部材の接続構造では、同一回路部材上で隣り合う回路電極間の絶縁性を維持しつつ、対向する回路電極間の抵抗値をより一層低減させることができる。   In the circuit member connection structure of the present invention, at least one of the first and second circuit electrodes has at least a surface selected from the group consisting of gold, silver, tin, a platinum group metal, and indium-tin oxide. It is preferable to consist of the material containing 1 type. In such a circuit member connection structure, the resistance value between the facing circuit electrodes can be further reduced while maintaining the insulation between the adjacent circuit electrodes on the same circuit member.

また、本発明の回路部材の接続構造において、第1及び第2の回路基板のうち少なくとも一方は、ポリエチレンテレフタレート、ポリエーテルスルホン、エポキシ樹脂、アクリル樹脂、ポリイミド樹脂及びガラスからなる群より選ばれる少なくとも一種を含む材料からなる基板であることが好ましい。上記本発明の回路接続材料は、硬化して回路接続部を形成したときに、これら特定の材料で構成された基板との間でより高い接着性を発現することができる。   In the circuit member connection structure of the present invention, at least one of the first and second circuit boards is at least selected from the group consisting of polyethylene terephthalate, polyethersulfone, epoxy resin, acrylic resin, polyimide resin, and glass. A substrate made of a material including one kind is preferable. When the circuit connection material of the present invention is cured to form a circuit connection portion, it can exhibit higher adhesion with a substrate made of these specific materials.

さらに、上記回路部材の接続構造において、第1及び第2の回路部材のうち少なくとも一方と上述の回路接続部との間に、窒化シリコン、シリコーン樹脂、ポリイミド樹脂及びアクリル樹脂からなる群より選ばれる少なくとも一種の材料を含む層が形成されていることが好ましい。これにより、上記層が形成されていないものに比べて、回路部材と回路接続部との接着性がより一層向上する。   Furthermore, in the connection structure of the circuit member, the member is selected from the group consisting of silicon nitride, silicone resin, polyimide resin, and acrylic resin between at least one of the first and second circuit members and the circuit connection portion. It is preferable that a layer containing at least one material is formed. Thereby, compared with the thing in which the said layer is not formed, the adhesiveness of a circuit member and a circuit connection part improves further.

本発明によれば、回路部材の材質によらず十分に高い接着性を示し、かつ、十分に長い可使時間を有するフィルム状回路接続材料、及びこれらを用いた回路部材の接続構造を提供できる。   According to the present invention, it is possible to provide a film-like circuit connection material that exhibits sufficiently high adhesiveness regardless of the material of the circuit member and has a sufficiently long pot life, and a circuit member connection structure using these. .

本発明に係る回路部材の接続構造の一実施形態を示す概略断面図である。It is a schematic sectional drawing which shows one Embodiment of the connection structure of the circuit member which concerns on this invention. 図1に示す回路部材の接続構造の製造方法の一例を概略断面図により示す工程図である。It is process drawing which shows an example of the manufacturing method of the connection structure of the circuit member shown in FIG. 1 with a schematic sectional drawing.

符号の説明Explanation of symbols

1…回路部材の回路接続構造、5…接着剤成分、7…導電性粒子、10…回路接続部、11…接着剤成分の硬化物、20…第1の回路部材、21…第1の回路基板、21a…第1の回路基板主面、22…第1の回路電極、30…第2の回路部材、31…第2の回路基板、31a…第2の回路基板主面、32…第2の回路電極、40…フィルム状回路接続材料。   DESCRIPTION OF SYMBOLS 1 ... Circuit connection structure of a circuit member, 5 ... Adhesive component, 7 ... Conductive particle, 10 ... Circuit connection part, 11 ... Hardened | cured material of an adhesive component, 20 ... 1st circuit member, 21 ... 1st circuit Substrate, 21a ... first circuit board main surface, 22 ... first circuit electrode, 30 ... second circuit member, 31 ... second circuit board, 31a ... second circuit board main surface, 32 ... second Circuit electrode, 40 ... film-like circuit connecting material.

以下、必要に応じて図面を参照しつつ、本発明の好適な実施形態について詳細に説明する。なお、図面中、同一要素には同一符号を付すこととし、重複する説明は省略する。また、上下左右等の位置関係は、特に断らない限り、図面に示す位置関係に基づくものとする。更に、図面の寸法比率は図示の比率に限られるものではない。また、本明細書における「(メタ)アクリル」とは「アクリル」及びそれに対応する「メタクリル」を意味し、「(メタ)アクリレート」とは「アクリレート」及びそれに対応する「メタクリレート」を意味し、「(メタ)アクリロイル」とは「アクリロイル」及びそれに対応する「メタクリロイル」を意味する。   Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the drawings as necessary. In the drawings, the same elements are denoted by the same reference numerals, and redundant description is omitted. Further, the positional relationship such as up, down, left and right is based on the positional relationship shown in the drawings unless otherwise specified. Further, the dimensional ratios in the drawings are not limited to the illustrated ratios. In the present specification, “(meth) acryl” means “acryl” and “methacryl” corresponding thereto, “(meth) acrylate” means “acrylate” and “methacrylate” corresponding thereto, “(Meth) acryloyl” means “acryloyl” and its corresponding “methacryloyl”.

(フィルム状回路接続材料)
本発明のフィルム状回路接続材料(回路接続用接着フィルム)は、第1の回路基板の主面上に第1の回路電極が形成された第1の回路部材と、第2の回路基板の主面上に第2の回路電極が形成された第2の回路部材とを、第1及び第2の回路電極を対向させた状態で電気的に接続する。本発明のフィルム状回路接続材料は、接着剤成分として、フィルム形成材と、ラジカル重合性化合物と、加熱により遊離ラジカルを発生するラジカル重合開始剤と、イソシアネート基含有化合物とを含有し、イソシアネート基含有化合物の含有割合が、フィルム形成材とラジカル重合性化合物との合計100質量部に対して0.09〜5質量部である。
(Film-like circuit connection material)
The film-like circuit connecting material (adhesive film for circuit connection) of the present invention includes a first circuit member in which a first circuit electrode is formed on a main surface of a first circuit board, and a main circuit board of a second circuit board. A second circuit member having a second circuit electrode formed on the surface is electrically connected with the first and second circuit electrodes facing each other. The film-like circuit connecting material of the present invention contains, as an adhesive component, a film-forming material, a radically polymerizable compound, a radical polymerization initiator that generates free radicals upon heating, and an isocyanate group-containing compound. The content rate of a containing compound is 0.09-5 mass parts with respect to a total of 100 mass parts of a film formation material and a radically polymerizable compound.

フィルム形成材とは、液状物を固形化し、構成組成物をフィルム形状とした場合に、そのフィルムの取り扱いが容易で、容易に裂けたり、割れたり、べたついたりしない機械特性等を付与するものであり、通常の状態でフィルムとしての取り扱いができるものである。フィルム形成材としては、例えば、ポリビニルホルマール樹脂、ポリスチレン樹脂、ポリビニルブチラール樹脂、ポリエステル樹脂、ポリエステルウレタン樹脂、ポリアミド樹脂、ポリウレタン樹脂、ポリアミドイミド樹脂、ポリイミド樹脂、キシレン樹脂、フェノキシ樹脂が挙げられる。また、フィルム形成材は、ラジカル重合性の官能基により変性されていてもよい。   The film-forming material is a material that solidifies a liquid material and forms a constituent composition into a film shape, so that the film is easy to handle and imparts mechanical properties that do not easily tear, crack, or stick. Yes, it can be handled as a film in a normal state. Examples of the film forming material include polyvinyl formal resin, polystyrene resin, polyvinyl butyral resin, polyester resin, polyester urethane resin, polyamide resin, polyurethane resin, polyamideimide resin, polyimide resin, xylene resin, and phenoxy resin. The film forming material may be modified with a radical polymerizable functional group.

本発明のフィルム状回路接続材料は、接着性により一層優れるという観点から、フィルム形成材として、ウレタン結合を有する有機化合物(以下、「ウレタン化合物」という場合がある。)を含有することが好ましい。なお、ウレタン化合物は、ウレタン結合をその主鎖中に有することが好ましく、ウレタン結合と共にエステル結合を有することがより好ましい。   The film-like circuit connecting material of the present invention preferably contains an organic compound having a urethane bond (hereinafter sometimes referred to as “urethane compound”) as a film-forming material from the viewpoint that it is more excellent in adhesiveness. In addition, it is preferable that a urethane compound has a urethane bond in the principal chain, and it is more preferable to have an ester bond with a urethane bond.

このウレタン化合物は、例えば、ポリエステルポリオールと、ジイソシアネートとの反応により、得られる。この反応により得られるウレタン化合物は、一般に、ポリエステルウレタン樹脂と称される場合がある。   This urethane compound is obtained, for example, by a reaction between a polyester polyol and diisocyanate. The urethane compound obtained by this reaction is generally sometimes referred to as a polyester urethane resin.

ジイソシアネートとしては、2,4−トリレンジイソシアネート(TDI)、4,4’−ジフェニルメタンジイソシアネート(MDI)、1,6−ヘキサメチレンジイソシアネート(HDI)、イソホロンジイソシアネート(IPDI)などの、芳香族、脂環族又は脂肪族のジイソシアネートが好適に用いられる。   Diisocyanates include 2,4-tolylene diisocyanate (TDI), 4,4′-diphenylmethane diisocyanate (MDI), 1,6-hexamethylene diisocyanate (HDI), isophorone diisocyanate (IPDI), and aromatic and alicyclic rings. An aliphatic or aliphatic diisocyanate is preferably used.

ポリエステルポリオールは、例えば、ジカルボン酸とジオールとの反応により、得られる。ジカルボン酸としては、テレフタル酸、イソフタル酸、アジピン酸、セバチン酸等の芳香族や脂肪族ジカルボン酸が好ましい。ジオールとしては、エチレングリコール、プロピレングリコール、1,4−ブタンジオール、ヘキサンジオール、ネオペンチルグリコール、ジエチレングリコール、トリエチレングリコールのようなグリコール類が好ましい。   The polyester polyol is obtained, for example, by a reaction between a dicarboxylic acid and a diol. As the dicarboxylic acid, aromatic or aliphatic dicarboxylic acids such as terephthalic acid, isophthalic acid, adipic acid, and sebacic acid are preferable. As the diol, glycols such as ethylene glycol, propylene glycol, 1,4-butanediol, hexanediol, neopentyl glycol, diethylene glycol, and triethylene glycol are preferable.

ウレタン化合物は、重量平均分子量が10000以上であることが好ましい。ウレタン化合物の重量平均分子量が10000未満であると、フィルム形成性が低下する傾向にある。なお、ウレタン化合物の重量平均分子量の上限値は、特に限定されないが、重量平均分子量が高すぎると、溶剤への溶解性や相溶性が低下して、フィルム状に成形するための塗工液を調製することが困難となる傾向にあるため、200000程度が好ましい。   The urethane compound preferably has a weight average molecular weight of 10,000 or more. When the weight average molecular weight of the urethane compound is less than 10,000, the film formability tends to decrease. In addition, the upper limit of the weight average molecular weight of the urethane compound is not particularly limited, but if the weight average molecular weight is too high, the solubility in the solvent and the compatibility are reduced, and a coating liquid for molding into a film is obtained. Since it tends to be difficult to prepare, about 200,000 is preferable.

本明細書における重量平均分子量は、表1に示す条件に従ってゲルパーミエイションクロマトグラフィー(GPC)分析により測定し、標準ポリスチレンの検量線を使用して換算することにより求められる。なお、GPC条件1はポリイミド樹脂の重量平均分子量を測定するときの条件であり、GPC条件2はポリイミド樹脂以外の有機化合物の重量平均分子量を測定するときの条件である。   The weight average molecular weight in this specification is measured by gel permeation chromatography (GPC) analysis according to the conditions shown in Table 1, and is determined by conversion using a standard polystyrene calibration curve. GPC condition 1 is a condition for measuring the weight average molecular weight of the polyimide resin, and GPC condition 2 is a condition for measuring the weight average molecular weight of an organic compound other than the polyimide resin.

Figure 2008139996
Figure 2008139996

ラジカル重合性化合物とは、ラジカル重合可能な官能基を有するものである。ラジカル重合性化合物としては、例えば、(メタ)アクリル酸化合物、マレイミド化合物又はスチレン誘導体が好適に用いられる。これらのラジカル重合性化合物は、重合性モノマー及び重合性オリゴマーのいずれであってもよく、重合性モノマーと重合性オリゴマーとを併用することも可能である。重合性オリゴマーは一般に高粘度であるため、重合性オリゴマーを用いる場合、低粘度の重合性多官能(メタ)アクリレート等の重合性モノマーを併用して粘度調整することが好ましい。   The radically polymerizable compound has a functional group capable of radical polymerization. As the radically polymerizable compound, for example, a (meth) acrylic acid compound, a maleimide compound or a styrene derivative is preferably used. These radically polymerizable compounds may be any of a polymerizable monomer and a polymerizable oligomer, and a polymerizable monomer and a polymerizable oligomer can be used in combination. Since the polymerizable oligomer generally has a high viscosity, when the polymerizable oligomer is used, it is preferable to adjust the viscosity by using a polymerizable monomer such as a polymerizable polyfunctional (meth) acrylate having a low viscosity.

(メタ)アクリル酸化合物としては、例えば、エポキシ(メタ)アクリレートオリゴマー、ウレタン(メタ)アクリレートオリゴマー、ポリエーテル(メタ)アクリレートオリゴマー及びポリエステル(メタ)アクリレートオリゴマー等の光重合性オリゴマー、トリメチロールプロパントリ(メタ)アクリレート、ポリエチレングリコールジ(メタ)アクリレート、ポリアルキレングリコールジ(メタ)アクリレート、ジシクロペンテニル(メタ)アクリレート、ジシクロペンテニロキシエチル(メタ)アクリレート、ネオペンチルグリコールジ(メタ)アクリレート、ジペンタエリスリトールヘキサ(メタ)アクリレート、イソシアヌル酸変性2官能(メタ)アクリレート、イソシアヌル酸変性3官能(メタ)アクリレート、2,2’−ジ(メタ)アクリロイロキシジエチルホスフェート及び2−(メタ)アクリロイロキシエチルアシッドホスフェート等の多官能(メタ)アクリレート化合物、ペンタエリスリトール(メタ)アクリレート、2−シアノエチル(メタ)アクリレート、シクロヘキシル(メタ)アクリレート、2−(2−エトキシエトキシ)エチル(メタ)アクリレート、2−エトキシエチル(メタ)アクリレート、2−エチルヘキシル(メタ)アクリレート、n−ヘキシル(メタ)アクリレート、2−ヒドロキシエチル(メタ)アクリレート、ヒドロキシプロピル(メタ)アクリレート、イソボルニル(メタ)アクリレート、イソデシル(メタ)アクリレート、イソオクチル(メタ)アクリレート、n−ラウリル(メタ)アクリレート、2−メトキシエチル(メタ)アクリレート、2−フェノキシエチル(メタ)アクリレート、テトラヒドロフルフリール(メタ)アクリレート、ネオペンチルグリコールジ(メタ)アクリレート、t−ブチルアミノエチル(メタ)アクリレート、シクロヘキシル(メタ)アクリレート、ジシクロペンテニロキシエチル(メタ)アクリレート、2−ヒドロキシエチル(メタ)アクリレート、イソボルニル(メタ)アクリレート、イソデシル(メタ)アクリレート、n−ラウリル(メタ)アクリレート、ステアリル(メタ)アクリレート、トリデシル(メタ)アクリレート、並びにグリシジル(メタ)アクリレートが挙げられる。   Examples of (meth) acrylic acid compounds include photopolymerizable oligomers such as epoxy (meth) acrylate oligomers, urethane (meth) acrylate oligomers, polyether (meth) acrylate oligomers, and polyester (meth) acrylate oligomers, and trimethylolpropane tri (Meth) acrylate, polyethylene glycol di (meth) acrylate, polyalkylene glycol di (meth) acrylate, dicyclopentenyl (meth) acrylate, dicyclopentenyloxyethyl (meth) acrylate, neopentyl glycol di (meth) acrylate, Dipentaerythritol hexa (meth) acrylate, isocyanuric acid modified bifunctional (meth) acrylate, isocyanuric acid modified trifunctional (meth) acrylate, 2,2'-di Polyfunctional (meth) acrylate compounds such as (meth) acryloyloxydiethyl phosphate and 2- (meth) acryloyloxyethyl acid phosphate, pentaerythritol (meth) acrylate, 2-cyanoethyl (meth) acrylate, cyclohexyl (meth) acrylate, 2- (2-ethoxyethoxy) ethyl (meth) acrylate, 2-ethoxyethyl (meth) acrylate, 2-ethylhexyl (meth) acrylate, n-hexyl (meth) acrylate, 2-hydroxyethyl (meth) acrylate, hydroxypropyl (Meth) acrylate, isobornyl (meth) acrylate, isodecyl (meth) acrylate, isooctyl (meth) acrylate, n-lauryl (meth) acrylate, 2-methoxyethyl (meth) Acrylate, 2-phenoxyethyl (meth) acrylate, tetrahydrofurfuryl (meth) acrylate, neopentyl glycol di (meth) acrylate, t-butylaminoethyl (meth) acrylate, cyclohexyl (meth) acrylate, dicyclopentenyloxy Ethyl (meth) acrylate, 2-hydroxyethyl (meth) acrylate, isobornyl (meth) acrylate, isodecyl (meth) acrylate, n-lauryl (meth) acrylate, stearyl (meth) acrylate, tridecyl (meth) acrylate, and glycidyl ( And (meth) acrylate.

(メタ)アクリル酸化合物は、1種を単独で又は2種以上を組み合わせて用いられる。回路接続材料の硬化収縮を抑制し、柔軟性を与えるためにはウレタン(メタ)アクリレートオリゴマーを配合するのが好ましい。   A (meth) acrylic acid compound is used individually by 1 type or in combination of 2 or more types. In order to suppress the curing shrinkage of the circuit connecting material and to provide flexibility, it is preferable to add a urethane (meth) acrylate oligomer.

マレイミド化合物としては、分子中にマレイミド基を2個以上含有するものが好ましい。その具体例としては、1−メチル−2,4−ビスマレイミドベンゼン、N,N’−m−フェニレンビスマレイミド、N,N’−p−フェニレンビスマレイミド、N,N’−m−トルイレンビスマレイミド、N,N’−4,4−ビフェニレンビスマレイミド、N,N’−4,4−(3,3’−ジメチル−ビフェニレン)ビスマレイミド、N,N’−4,4−(3,3’−ジメチルジフェニルメタン)ビスマレイミド、N,N’−4,4−(3,3’−ジエチルジフェニルメタン)ビスマレイミド、N,N’−4,4−ジフェニルメタンビスマレイミド、N,N’−4,4−ジフェニルプロパンビスマレイミド、N,N’−4,4−ジフェニルエーテルビスマレイミド、N,N’−3,3’−ジフェニルスルホンビスマレイミド、2,2−ビス[4−(4−マレイミドフェノキシ)フェニル]プロパン、2,2−ビス[3−s−ブチル−4−(4−マレイミドフェノキシ)フェニル]プロパン、1,1−ビス[4−(4−マレイミドフェノキシ)フェニル]デカン、4,4’−シクロヘキシリデン−ビス[1−(4−マレイミドフェノキシ)−2−シクロヘキシルベンゼン]及び2,2−ビス[4−(4−マレイミドフェノキシ)フェニル]ヘキサフルオロプロパンが挙げられる。   As the maleimide compound, those containing two or more maleimide groups in the molecule are preferable. Specific examples thereof include 1-methyl-2,4-bismaleimide benzene, N, N′-m-phenylene bismaleimide, N, N′-p-phenylene bismaleimide, N, N′-m-toluylene bis. Maleimide, N, N′-4,4-biphenylenebismaleimide, N, N′-4,4- (3,3′-dimethyl-biphenylene) bismaleimide, N, N′-4,4- (3,3 '-Dimethyldiphenylmethane) bismaleimide, N, N'-4,4- (3,3'-diethyldiphenylmethane) bismaleimide, N, N'-4,4-diphenylmethane bismaleimide, N, N'-4,4 -Diphenylpropane bismaleimide, N, N'-4,4-diphenyl ether bismaleimide, N, N'-3,3'-diphenylsulfone bismaleimide, 2,2-bis [ -(4-maleimidophenoxy) phenyl] propane, 2,2-bis [3-s-butyl-4- (4-maleimidophenoxy) phenyl] propane, 1,1-bis [4- (4-maleimidophenoxy) phenyl Decane, 4,4′-cyclohexylidene-bis [1- (4-maleimidophenoxy) -2-cyclohexylbenzene] and 2,2-bis [4- (4-maleimidophenoxy) phenyl] hexafluoropropane. It is done.

マレイミド化合物は、1種を単独で又は2種以上を組み合わせて用いられる。   A maleimide compound is used individually by 1 type or in combination of 2 or more types.

本発明のフィルム状回路接続材料は、接着性を向上する目的で、ラジカル重合性化合物として、リン酸エステル型(メタ)アクリレートを含有することが好ましい。リン酸エステル型(メタ)アクリレートを含有することにより、フィルム状回路接続材料は、特に金属等の無機材料との接着性が向上する。リン酸エステル型(メタ)アクリレートとしては、特に制限なく公知のものを使用することができる。その具体例としては、下記一般式(2)で表される化合物が挙げられる。

Figure 2008139996
ここで、nは1〜3の整数を示す。The film-like circuit connecting material of the present invention preferably contains a phosphate ester type (meth) acrylate as a radically polymerizable compound for the purpose of improving adhesiveness. By containing the phosphoric ester type (meth) acrylate, the film-like circuit connecting material is improved particularly in adhesion to an inorganic material such as a metal. As the phosphate ester type (meth) acrylate, known ones can be used without particular limitation. Specific examples thereof include compounds represented by the following general formula (2).
Figure 2008139996
Here, n shows the integer of 1-3.

一般に、リン酸エステル型(メタ)アクリレートは、無水リン酸と2−ヒドロキシエチル(メタ)アクリレートの反応物として得られる。リン酸エステル型(メタ)アクリレートとして、具体的には、モノ(2−メタクリロイルオキシエチル)アシッドフォスフェート、ジ(2−メタクリロイルオキシエチル)アシッドフォスフェートが挙げられる。これらは1種を単独で又は2種以上を組み合わせて用いられる。   Generally, phosphoric ester type (meth) acrylate is obtained as a reaction product of phosphoric anhydride and 2-hydroxyethyl (meth) acrylate. Specific examples of the phosphate ester type (meth) acrylate include mono (2-methacryloyloxyethyl) acid phosphate and di (2-methacryloyloxyethyl) acid phosphate. These are used singly or in combination of two or more.

本発明のフィルム状回路接続材料は、接着性により一層優れる観点から、アリル(メタ)アクリレートを含むことができる。アリル(メタ)アクリレートの配合割合は、フィルム形成材とラジカル重合性化合物との合計100質量部に対して、0.1〜10質量部であることが好ましく、0.5〜5質量部であることがより好ましい。   The film-like circuit connecting material of the present invention can contain allyl (meth) acrylate from the viewpoint of being more excellent in adhesiveness. The mixing ratio of allyl (meth) acrylate is preferably 0.1 to 10 parts by mass, and 0.5 to 5 parts by mass with respect to 100 parts by mass in total of the film forming material and the radical polymerizable compound. It is more preferable.

また、加熱により遊離ラジカルを発生するラジカル重合開始剤としては、従来知られている過酸化化合物(有機過酸化物)及びアゾ化合物が用いられる。   Moreover, as a radical polymerization initiator that generates free radicals upon heating, conventionally known peroxide compounds (organic peroxides) and azo compounds are used.

有機過酸化物及びアゾ化合物は、主として加熱により遊離ラジカルを発生する。これらの化合物をラジカル重合開始剤として用いる場合、有機過酸化物及び/又はアゾ化合物から1種又は2種以上を、目的とする接続温度、接続時間、可使時間(以下、「ポットライフ」という場合がある)等により適宜選択する。   Organic peroxides and azo compounds generate free radicals mainly by heating. When these compounds are used as radical polymerization initiators, one or more organic peroxides and / or azo compounds are used as the desired connection temperature, connection time, pot life (hereinafter referred to as “pot life”). Etc.).

有機過酸化物としては、高い反応性と長いポットライフを両立する観点から、10時間半減期温度が40℃以上、かつ、1分間半減期温度が180℃以下である有機過酸化物が好ましく、10時間半減期温度が60℃以上、かつ、1分間半減期温度が170℃以下である有機過酸化物がより好ましい。また、有機過酸化物は、回路部材の回路電極(接続端子)の腐食を防止するために、塩素イオンや有機酸の含有量が5000質量ppm以下であることが好ましい。さらに、有機過酸化物は、加熱分解後に発生する有機酸が少ないものがより好ましい。   The organic peroxide is preferably an organic peroxide having a 10-hour half-life temperature of 40 ° C. or higher and a 1-minute half-life temperature of 180 ° C. or lower from the viewpoint of achieving both high reactivity and a long pot life. An organic peroxide having a 10-hour half-life temperature of 60 ° C. or higher and a 1-minute half-life temperature of 170 ° C. or lower is more preferable. The organic peroxide preferably has a chlorine ion or organic acid content of 5000 ppm by mass or less in order to prevent corrosion of the circuit electrode (connection terminal) of the circuit member. Further, the organic peroxide is more preferably one that generates less organic acid after thermal decomposition.

有機過酸化物としては、具体的には、ジアシルパーオキサイド、パーオキシジカーボネート、パーオキシエステル、パーオキシケタール、ジアルキルパーオキサイド、ハイドロパーオキサイド及びシリルパーオキサイドからなる群より選ばれる1種以上の有機過酸化物が好適である。これらの中では、保存時の高い保存安定性と使用時の高い反応性を両立する観点から、パーオキシエステル、パーオキシケタール、ジアルキルパーオキサイド、ハイドロパーオキサイド及びシリルパーオキサイドからなる群より選ばれる1種以上の有機過酸化物がより好ましい。さらには、より高い反応性が得られる点で、有機過酸化物が、パーオキシエステル及び/又はパーオキシケタールであることが更に好ましい。   Specifically, the organic peroxide is one or more selected from the group consisting of diacyl peroxide, peroxydicarbonate, peroxyester, peroxyketal, dialkyl peroxide, hydroperoxide and silyl peroxide. Organic peroxides are preferred. Among these, from the viewpoint of achieving both high storage stability during storage and high reactivity during use, it is selected from the group consisting of peroxyesters, peroxyketals, dialkyl peroxides, hydroperoxides, and silyl peroxides. One or more organic peroxides are more preferred. Furthermore, the organic peroxide is more preferably a peroxyester and / or a peroxyketal in that higher reactivity can be obtained.

ジアシルパーオキサイドとしては、例えば、イソブチルパーオキサイド、2,4−ジクロロベンゾイルパーオキサイド、3,5,5−トリメチルヘキサノイルパーオキサイド、オクタノイルパーオキサイド、ラウロイルパーオキサイド、ステアロイルパーオキサイド、スクシニックパーオキサイド、ベンゾイルパーオキシトルエン及びベンゾイルパーオキサイドが挙げられる。これらは1種を単独で又は2種以上を組み合わせて用いられる。   Examples of the diacyl peroxide include isobutyl peroxide, 2,4-dichlorobenzoyl peroxide, 3,5,5-trimethylhexanoyl peroxide, octanoyl peroxide, lauroyl peroxide, stearoyl peroxide, and succinic peroxide. , Benzoylperoxytoluene and benzoyl peroxide. These are used singly or in combination of two or more.

ジアルキルパーオキサイドとしては、例えば、α,α’−ビス(t−ブチルパーオキシ)ジイソプロピルベンゼン、ジクミルパーオキサイド、2,5−ジメチル−2,5−ジ(t−ブチルパーオキシ)ヘキサン及びt−ブチルクミルパーオキサイドが挙げられる。これらは1種を単独で又は2種以上を組み合わせて用いられる。   Examples of the dialkyl peroxide include α, α′-bis (t-butylperoxy) diisopropylbenzene, dicumyl peroxide, 2,5-dimethyl-2,5-di (t-butylperoxy) hexane, and t. -Butyl cumyl peroxide is mentioned. These are used singly or in combination of two or more.

パーオキシジカーボネートとしては、例えば、ジ−n−プロピルパーオキシジカーボネート、ジイソプロピルパーオキシジカーボネート、ビス(4−t−ブチルシクロヘキシル)パーオキシジカーボネート、ジ−2−エトキシメトキシパーオキシジカーボネート、ビス(2−エチルヘキシルパーオキシ)ジカーボネート、ジメトキシブチルパーオキシジカーボネート及びビス(3−メチル−3−メトキシブチルパーオキシ)ジカーボネートが挙げられる。これらは1種を単独で又は2種以上を組み合わせて用いられる。   Examples of peroxydicarbonate include di-n-propyl peroxydicarbonate, diisopropyl peroxydicarbonate, bis (4-t-butylcyclohexyl) peroxydicarbonate, di-2-ethoxymethoxyperoxydicarbonate, Bis (2-ethylhexylperoxy) dicarbonate, dimethoxybutylperoxydicarbonate and bis (3-methyl-3-methoxybutylperoxy) dicarbonate are mentioned. These are used singly or in combination of two or more.

パーオキシエステルとしては、例えば、クミルパーオキシネオデカノエート、1,1,3,3−テトラメチルブチルパーオキシネオデカノエート、1−シクロヘキシル−1−メチルエチルパーオキシネオデカノエート、t−ヘキシルパーオキシネオデカノエート、t−ブチルパーオキシピバレート、1,1,3,3−テトラメチルブチルパーオキシ−2−エチルヘキサノエート、2,5−ジメチル−2,5−ビス(2−エチルヘキサノイルパーオキシ)ヘキサン、1−シクロヘキシル−1−メチルエチルパーオキシ−2−エチルヘキサノエート、t−ヘキシルパーオキシ−2−エチルヘキサノエート、t−ブチルパーオキシ−2−エチルヘキサノエート、t−ブチルパーオキシイソブチレート、1,1−ビス(t−ブチルパーオキシ)シクロヘキサン、t−ヘキシルパーオキシイソプロピルモノカーボネート、t−ブチルパーオキシ−3,5,5−トリメチルヘキサノエート、t−ブチルパーオキシラウレート、2,5−ジメチル−2,5−ビス(m−トルオイルパーオキシ)ヘキサン、t−ブチルパーオキシイソプロピルモノカーボネート、t−ブチルパーオキシ−2−エチルヘキシルモノカーボネート、t−ヘキシルパーオキシベンゾエート、t−ブチルパーオキシアセテート及びビス(t−ブチルパーオキシ)ヘキサヒドロテレフタレートが挙げられる。これらは1種を単独で又は2種以上を組み合わせて用いられる。   Examples of peroxyesters include cumyl peroxyneodecanoate, 1,1,3,3-tetramethylbutylperoxyneodecanoate, 1-cyclohexyl-1-methylethylperoxyneodecanoate, t -Hexylperoxyneodecanoate, t-butylperoxypivalate, 1,1,3,3-tetramethylbutylperoxy-2-ethylhexanoate, 2,5-dimethyl-2,5-bis ( 2-ethylhexanoylperoxy) hexane, 1-cyclohexyl-1-methylethylperoxy-2-ethylhexanoate, t-hexylperoxy-2-ethylhexanoate, t-butylperoxy-2-ethyl Hexanoate, t-butylperoxyisobutyrate, 1,1-bis (t-butylperoxy) cyclo Xane, t-hexylperoxyisopropyl monocarbonate, t-butylperoxy-3,5,5-trimethylhexanoate, t-butylperoxylaurate, 2,5-dimethyl-2,5-bis (m- Toluoylperoxy) hexane, t-butylperoxyisopropyl monocarbonate, t-butylperoxy-2-ethylhexyl monocarbonate, t-hexylperoxybenzoate, t-butylperoxyacetate and bis (t-butylperoxy) Hexahydroterephthalate is mentioned. These are used singly or in combination of two or more.

パーオキシケタールとしては、例えば、1,1−ビス(t−ヘキシルパーオキシ)−3,3,5−トリメチルシクロヘキサン、1,1−ビス(t−ヘキシルパーオキシ)シクロヘキサン、1,1−ビス(t−ブチルパーオキシ)−3,3,5−トリメチルシクロヘキサン、1,1−(t−ブチルパーオキシ)シクロドデカン及び2,2−ビス(t−ブチルパーオキシ)デカンが挙げられる。これらは1種を単独で又は2種以上を組み合わせて用いられる。   Examples of peroxyketals include 1,1-bis (t-hexylperoxy) -3,3,5-trimethylcyclohexane, 1,1-bis (t-hexylperoxy) cyclohexane, 1,1-bis ( t-Butylperoxy) -3,3,5-trimethylcyclohexane, 1,1- (t-butylperoxy) cyclododecane and 2,2-bis (t-butylperoxy) decane. These are used singly or in combination of two or more.

ハイドロパーオキサイドとしては、例えば、ジイソプロピルベンゼンハイドロパーオキサイド及びクメンハイドロパーオキサイドが挙げられる。これらは1種を単独で又は2種以上を組み合わせて用いられる。   Examples of the hydroperoxide include diisopropylbenzene hydroperoxide and cumene hydroperoxide. These are used singly or in combination of two or more.

シリルパーオキサイドとしては、例えば、t−ブチルトリメチルシリルパーオキサイド、ビス(t−ブチル)ジメチルシリルパーオキサイド、t−ブチルトリビニルシリルパーオキサイド、ビス(t−ブチル)ジビニルシリルパーオキサイド、トリス(t−ブチル)ビニルシリルパーオキサイド、t−ブチルトリアリルシリルパーオキサイド、ビス(t−ブチル)ジアリルシリルパーオキサイド及びトリス(t−ブチル)アリルシリルパーオキサイドが挙げられる。これらは1種を単独で又は2種以上を組み合わせて用いられる。   Examples of the silyl peroxide include t-butyltrimethylsilyl peroxide, bis (t-butyl) dimethylsilyl peroxide, t-butyltrivinylsilyl peroxide, bis (t-butyl) divinylsilyl peroxide, tris (t- Butyl) vinylsilyl peroxide, t-butyltriallylsilyl peroxide, bis (t-butyl) diallylsilyl peroxide, and tris (t-butyl) allylsilyl peroxide. These are used singly or in combination of two or more.

これらの有機過酸化物を用いる場合、さらに分解促進剤、抑制剤等を組み合わせて用いてもよい。また、これらの有機過酸化物はポリウレタン系、ポリエステル系の高分子物質等で被覆してマイクロカプセル化したものであると、可使時間が延長されるために好ましい。   When these organic peroxides are used, a combination of a decomposition accelerator, an inhibitor and the like may be used. Further, these organic peroxides are preferably microencapsulated by being coated with a polyurethane-based or polyester-based polymer substance because the pot life is extended.

また、アゾ化合物としては、例えば、2,2’−アゾビス−2,4−ジメチルバレロニトリル、1,1’−アゾビス(1−アセトキシ−1−フェニルエタン)、2,2’−アゾビスイソブチロニトリル、2,2’−アゾビス(2−メチルブチロニトリル)、ジメチル−2,2’−アゾビスイソブチロニトリル、4,4’−アゾビス(4−シアノバレリン酸)及び1,1’−アゾビス(1−シクロヘキサンカルボニトリル)が挙げられる。これらは1種を単独で又は2種以上を組み合わせて用いられる。   Examples of the azo compound include 2,2′-azobis-2,4-dimethylvaleronitrile, 1,1′-azobis (1-acetoxy-1-phenylethane), and 2,2′-azobisisobutyrate. Ronitrile, 2,2′-azobis (2-methylbutyronitrile), dimethyl-2,2′-azobisisobutyronitrile, 4,4′-azobis (4-cyanovaleric acid) and 1,1′- Azobis (1-cyclohexanecarbonitrile) is mentioned. These are used singly or in combination of two or more.

通常、ラジカル重合開始剤の配合割合は、フィルム形成材とラジカル重合性化合物との合計100質量部に対して0.05〜20質量部であることが好ましく、0.1〜10質量部であることがより好ましい。ラジカル重合開始剤の配合割合が0.05質量部未満であると、反応率が低下するため、フィルム状回路接続材料が硬化し難くなる傾向にある。ラジカル重合開始剤の配合割合が20質量部を超えると、可使時間が短くなる傾向にある。なお、ラジカル重合開始剤の配合割合は、目的とする接続温度、接続時間、ポットライフ等により適宜設定できる。例えば、接続時間を25秒以下とした場合、十分な反応率を得るために、ラジカル重合開始剤の配合割合は、フィルム形成材とラジカル重合性化合物との合計100質量部に対して、2〜10質量部であることが好ましく、4〜8質量部であることがより好ましい。   Usually, it is preferable that the mixture ratio of a radical polymerization initiator is 0.05-20 mass parts with respect to a total of 100 mass parts of a film formation material and a radically polymerizable compound, and is 0.1-10 mass parts. It is more preferable. When the blending ratio of the radical polymerization initiator is less than 0.05 parts by mass, the reaction rate decreases, so that the film-like circuit connecting material tends to be hard to be cured. When the blending ratio of the radical polymerization initiator exceeds 20 parts by mass, the pot life tends to be shortened. In addition, the mixture ratio of a radical polymerization initiator can be suitably set with the target connection temperature, connection time, pot life, etc. For example, when the connection time is 25 seconds or less, in order to obtain a sufficient reaction rate, the blending ratio of the radical polymerization initiator is 2 to 2 parts by mass with respect to a total of 100 parts by mass of the film forming material and the radical polymerizable compound. The amount is preferably 10 parts by mass, and more preferably 4 to 8 parts by mass.

イソシアネート基含有化合物は、分子中にイソシアネート基を有する化合物であれば、特に限定されない。イソシアネート基含有化合物としては、例えば、p−トルエンスルホニルイソシアネート、オクタデシルイソシアネート、(メタ)アクリロイルイソシアネート、γ−トリイソシアネートプロピルトリエトキシシラン等のモノイソシアネート化合物、2,4−トリレンジイソシアネート、2,6−トリレンジイソシアネート、キシリレンジイソシアネート、ヘキサメチレンジイソシアネート、イソホロンジイソシアネート、ジフェニルメタン−4,4−ジイソシアネート等のジイソシアネート化合物、各種ポリエーテルポリオール、ポリエステルポリオール、ポリアミド等とイソシアネート化合物との反応によって得られる末端にイソシアネート基を有する化合物が挙げられる。ジイソシアネート化合物としては、市販品として入手することができ、例えば、日本ポリウレタン工業社製の商品名「コロネートL」、「ミリオネートMR」、「コロネートEH」、「コロネートHL」を用いることができる。また、被着体に対する接着性をより一層向上する観点から、イソシアネート基含有化合物が、末端に水酸基、ニトリル基、カルボキシル基等の反応性の高い極性基を有することが好ましい。さらに、イソシアネート基含有化合物がトリメトキシシリル基、トリエトキシシリル基等のアルコキシシリル基を有すると、これらの基は被着体表面の吸着水と化学結合を形成し、強固に接着することができるため、より好ましい。   The isocyanate group-containing compound is not particularly limited as long as it is a compound having an isocyanate group in the molecule. Examples of the isocyanate group-containing compound include monoisocyanate compounds such as p-toluenesulfonyl isocyanate, octadecyl isocyanate, (meth) acryloyl isocyanate, and γ-triisocyanatopropyltriethoxysilane, 2,4-tolylene diisocyanate, 2,6- Diisocyanate compounds such as tolylene diisocyanate, xylylene diisocyanate, hexamethylene diisocyanate, isophorone diisocyanate, diphenylmethane-4,4-diisocyanate, various polyether polyols, polyester polyols, polyamides, etc. The compound which has is mentioned. As a diisocyanate compound, it can obtain as a commercial item, for example, the brand names "Coronate L", "Millionate MR", "Coronate EH", and "Coronate HL" by Nippon Polyurethane Industry can be used. From the viewpoint of further improving the adhesion to the adherend, it is preferable that the isocyanate group-containing compound has a highly reactive polar group such as a hydroxyl group, a nitrile group, or a carboxyl group at the terminal. Furthermore, when the isocyanate group-containing compound has an alkoxysilyl group such as a trimethoxysilyl group or a triethoxysilyl group, these groups form a chemical bond with the adsorbed water on the adherend surface and can be firmly bonded. Therefore, it is more preferable.

上記イソシアネート基含有化合物の含有割合は、フィルム形成材とラジカル重合性化合物との合計100質量部に対して0.09〜5質量部であり、0.1〜5質量部であることが好ましく、0.5〜3質量部であることがより好ましい。イソシアネート基含有化合物の含有割合が0.09質量部未満では、十分な接着性が得られ難くなり、5質量部を超えると可使時間が短くなる傾向がある。   The content ratio of the isocyanate group-containing compound is 0.09 to 5 parts by mass, preferably 0.1 to 5 parts by mass with respect to 100 parts by mass in total of the film-forming material and the radical polymerizable compound. More preferably, it is 0.5-3 mass parts. When the content ratio of the isocyanate group-containing compound is less than 0.09 parts by mass, sufficient adhesiveness is hardly obtained, and when it exceeds 5 parts by mass, the pot life tends to be shortened.

また、本発明のフィルム状回路接続材料は、接着剤成分として、含フッ素有機化合物を含有することが好ましい。含フッ素有機化合物としては、分子中にフッ素を有する化合物であればよく、公知のものであってもよく、上述したフィルム形成材又はラジカル重合性化合物がフッ素原子を有していてもよい。具体的には、例えば、含フッ素ポリビニルブチラール樹脂、含フッ素ポリビニルホルマール樹脂、含フッ素ポリイミド樹脂、含フッ素ポリアミド樹脂、含フッ素ポリアミドイミド樹脂、含フッ素ポリエステル樹脂、含フッ素フェノール樹脂、含フッ素エポキシ樹脂、含フッ素フェノキシ樹脂、含フッ素ポリウレタン樹脂、含フッ素ポリエステルウレタン樹脂、含フッ素ポリアリレート樹脂、含フッ素スチレン樹脂、含フッ素シリコーン樹脂、含フッ素アクリルゴム、含フッ素ニトリルゴム、含フッ素NBR、含フッ素SBSが挙げられる。これらは単独又は2種類以上を混合して用いられる。フィルム状回路接続材料がこれらの含フッ素有機化合物を含有すると、回路部材の材質によらずより良好な接着性を示し、転写性の経時変化が抑制され転写性にも優れるものとなる。   Moreover, it is preferable that the film-form circuit connection material of this invention contains a fluorine-containing organic compound as an adhesive agent component. As a fluorine-containing organic compound, what is necessary is just a compound which has a fluorine in a molecule | numerator, a well-known thing may be sufficient, and the film forming material or radical polymerizable compound mentioned above may have a fluorine atom. Specifically, for example, fluorine-containing polyvinyl butyral resin, fluorine-containing polyvinyl formal resin, fluorine-containing polyimide resin, fluorine-containing polyamide resin, fluorine-containing polyamideimide resin, fluorine-containing polyester resin, fluorine-containing phenol resin, fluorine-containing epoxy resin, Fluorine-containing phenoxy resin, fluorine-containing polyurethane resin, fluorine-containing polyester urethane resin, fluorine-containing polyarylate resin, fluorine-containing styrene resin, fluorine-containing silicone resin, fluorine-containing acrylic rubber, fluorine-containing nitrile rubber, fluorine-containing NBR, and fluorine-containing SBS Can be mentioned. These are used individually or in mixture of 2 or more types. When the film-like circuit connecting material contains these fluorine-containing organic compounds, better adhesiveness is exhibited regardless of the material of the circuit member, the change in transferability with time is suppressed, and transferability is excellent.

含フッ素有機化合物の重量平均分子量は、硬化時の応力緩和性に優れ、接着性がより一層向上する観点から、5000〜1000000が好ましく、20000〜200000がより好ましい。含フッ素有機化合物の重量平均分子量が5000未満では、フィルム形成性が不十分となる傾向があり、重量平均分子量が1000000を超えると、他の成分との相溶性が劣る傾向がある。   The weight average molecular weight of the fluorine-containing organic compound is preferably from 5,000 to 1,000,000, more preferably from 20,000 to 200,000, from the viewpoint of excellent stress relaxation during curing and further improved adhesiveness. When the weight average molecular weight of the fluorine-containing organic compound is less than 5,000, the film formability tends to be insufficient, and when the weight average molecular weight exceeds 1,000,000, the compatibility with other components tends to be poor.

さらに、本発明のフィルム状回路接続材料は、応力緩和に優れるものとするために、アクリルゴムを含有することができる。アクリルゴムとしては、アクリル酸、(メタ)アクリル酸エステル又はアクリロニトリルのうち少なくとも1種のアクリル系モノマーを重合した重合体又は共重合体が用いられる。アクリルゴムは、上記モノマーとグリシジルエーテル基を有するグリシジル(メタ)アクリレートとを共重合したものであってもよい。アクリルゴムの重量平均分子量はフィルム状回路接続材料の凝集力を高める点から、200000以上であることが好ましい。   Furthermore, the film-like circuit connecting material of the present invention can contain acrylic rubber in order to be excellent in stress relaxation. As the acrylic rubber, a polymer or copolymer obtained by polymerizing at least one acrylic monomer of acrylic acid, (meth) acrylic acid ester or acrylonitrile is used. The acrylic rubber may be a copolymer of the above monomer and glycidyl (meth) acrylate having a glycidyl ether group. The weight average molecular weight of the acrylic rubber is preferably 200000 or more from the viewpoint of increasing the cohesive strength of the film-like circuit connecting material.

本発明のフィルム状回路接続材料には、上述のもの以外に、接着剤成分として、使用目的に応じて別の材料が添加されてもよい。例えば、フィルム状回路接続材料には、カップリング剤、密着性向上剤、レベリング剤等の接着助剤が適宜添加されてもよい。これにより、更に良好な接着性や取扱い性を付与することができるようになる。   In addition to the above-described materials, another material may be added to the film-like circuit connecting material of the present invention as an adhesive component depending on the purpose of use. For example, an adhesion assistant such as a coupling agent, an adhesion improver, and a leveling agent may be appropriately added to the film-like circuit connecting material. As a result, it is possible to impart even better adhesiveness and handleability.

カップリング剤としては、接着性の向上の点からケチミン、ビニル基、アクリル基、アミノ基、エポキシ基及びイソシアネート基含有物が好ましく使用できる。具体的には、アクリル基を有するシランカップリング剤として、(3−メタクリロキシプロピル)トリメトキシシラン、(3−アクリロキシプロピル)トリメトキシシラン、(3−メタクリロキシプロピル)ジメトキシメチルシラン、(3−アクリロキシプロピル)ジメトキシメチルシラン、アミノ基を有するシランカップリング剤として、N−β(アミノエチル)γ−アミノプロピルトリメトキシシラン、N−β(アミノエチル)γ−アミノプロピルメチルジメトキシシラン、γ−アミノプロピルトリエトキシシラン、N−フェニル−γ−アミノプロピルトリメトキシシランが挙げられる。ケチミンを有するシランカップリング剤として、上記のアミノ基を有するシランカップリング剤に、アセトン、メチルエチルケトン、メチルイソブチルケトン等のケトン化合物を反応させて得られたものが挙げられる。また、エポキシ基を有するシランカップリング剤として、γ−グリシジルオキシプロピルトリメトキシシラン、γ−グリシジルオキシプロピルトリエトキシシラン、γ−グリシジルオキシプロピル−メチルジメトキシシラン、γ−グリシジルオキシプロピル−メチルジエトキシシランが挙げられる。   As the coupling agent, a ketimine, vinyl group, acrylic group, amino group, epoxy group and isocyanate group-containing material can be preferably used from the viewpoint of improving adhesiveness. Specifically, as a silane coupling agent having an acrylic group, (3-methacryloxypropyl) trimethoxysilane, (3-acryloxypropyl) trimethoxysilane, (3-methacryloxypropyl) dimethoxymethylsilane, (3 -Acryloxypropyl) dimethoxymethylsilane, N-β (aminoethyl) γ-aminopropyltrimethoxysilane, N-β (aminoethyl) γ-aminopropylmethyldimethoxysilane, γ as a silane coupling agent having an amino group -Aminopropyltriethoxysilane, N-phenyl-γ-aminopropyltrimethoxysilane. Examples of the silane coupling agent having ketimine include those obtained by reacting the above silane coupling agent having an amino group with a ketone compound such as acetone, methyl ethyl ketone, and methyl isobutyl ketone. Moreover, as a silane coupling agent having an epoxy group, γ-glycidyloxypropyltrimethoxysilane, γ-glycidyloxypropyltriethoxysilane, γ-glycidyloxypropyl-methyldimethoxysilane, γ-glycidyloxypropyl-methyldiethoxysilane Is mentioned.

カップリング剤の配合割合は、回路接続材料中のその他の配合物の合計100質量部に対して0.1〜20質量部が好ましい。カップリング剤の配合割合が0.1質量部未満の場合、実質的な添加効果が得られない傾向がある。またカップリング剤の配合割合が20質量部を超える場合、支持基材上へ回路接続材料からなる接着層を形成した際の接着層のフィルム形成性が低下し、膜厚強度が低下する傾向がある。   As for the mixture ratio of a coupling agent, 0.1-20 mass parts is preferable with respect to a total of 100 mass parts of the other compound in a circuit connection material. When the blending ratio of the coupling agent is less than 0.1 parts by mass, there is a tendency that a substantial addition effect cannot be obtained. Moreover, when the compounding ratio of the coupling agent exceeds 20 parts by mass, the film formability of the adhesive layer when the adhesive layer made of the circuit connecting material is formed on the supporting base material tends to decrease, and the film thickness strength tends to decrease. is there.

本発明のフィルム状回路接続材料は、導電性粒子を含有しなくても、接続時に相対向する回路電極同士又の直接接触により接続が得られる。ただし、フィルム状回路接続材料が導電性粒子を含有すると、より安定した回路電極間の接続が得られるので好ましい。   Even if the film-like circuit connecting material of the present invention does not contain conductive particles, connection can be obtained by direct contact between circuit electrodes facing each other at the time of connection. However, it is preferable that the film-like circuit connecting material contains conductive particles because a more stable connection between circuit electrodes can be obtained.

本発明において必要に応じて含まれる導電性粒子は、電気的接続を得ることができる導電性を有するものであれば特に制限されない。導電性粒子としては、例えば、Au、Ag、Ni、Cu及びはんだ等の金属粒子やカーボンが挙げられる。また、導電性粒子は、核となる粒子を1層又は2層以上の層で被覆し、その最外層が導電性を有するものであってもよい。この場合、より優れたポットライフを得る観点から、最外層が、Ni、Cu等の遷移金属よりも、Au、Ag及び/又は白金族金属等の貴金属を主成分とすることが好ましく、これらの貴金属の少なくとも1種以上からなることがより好ましい。これらの貴金属の中では、Auが最も好ましい。   In the present invention, the conductive particles included as necessary are not particularly limited as long as they have electrical conductivity capable of obtaining electrical connection. Examples of the conductive particles include metal particles such as Au, Ag, Ni, Cu, and solder, and carbon. Further, the conductive particles may be one in which the core particles are covered with one layer or two or more layers, and the outermost layer has conductivity. In this case, from the viewpoint of obtaining a superior pot life, the outermost layer is preferably composed mainly of a noble metal such as Au, Ag and / or a platinum group metal rather than a transition metal such as Ni or Cu. More preferably, it consists of at least one kind of noble metal. Of these noble metals, Au is most preferable.

導電性粒子は、核としての遷移金属を主成分とする粒子又は核を被覆した遷移金属を主成分とする層の表面を、更に貴金属を主成分とする層で被覆してなるものであってもよい。また、導電性粒子は、非導電性のガラス、セラミック、プラスチック等を主成分とする絶縁性粒子を核とし、この核の表面に上記金属又はカーボンを主成分とする層で被覆したものであってもよい。   The conductive particles are formed by coating the surface of a particle mainly composed of transition metal as a nucleus or a layer mainly composed of transition metal covering the nucleus with a layer mainly composed of noble metal. Also good. In addition, the conductive particles have insulating particles mainly composed of non-conductive glass, ceramics, plastics, etc. as the core, and the surface of the core is coated with a layer mainly composed of the metal or carbon. May be.

導電性粒子が、絶縁性粒子である核を導電層で被覆してなるものである場合、絶縁性粒子がプラスチックを主成分とするものであり、最外層が貴金属を主成分とするものであると好ましい。これにより、フィルム状回路接続材料中の導電性粒子が加熱及び加圧に対して良好に変形することができる。しかも、回路等の接続時に、導電性粒子の回路電極や接続端子との接触面積が増加する。そのため、フィルム状回路接続材料の接続信頼性を更に向上させることができる。同様の観点から、導電性粒子が、上記加熱により溶融する金属を主成分として含む粒子であると好ましい。   In the case where the conductive particles are formed by coating nuclei that are insulating particles with a conductive layer, the insulating particles are mainly composed of plastic, and the outermost layer is composed mainly of a noble metal. And preferred. Thereby, the electroconductive particle in a film-form circuit connection material can deform | transform favorably with respect to a heating and pressurization. In addition, the contact area between the conductive particles and the circuit electrodes and connection terminals increases when connecting the circuit and the like. Therefore, the connection reliability of the film-like circuit connection material can be further improved. From the same point of view, the conductive particles are preferably particles containing as a main component a metal that is melted by the heating.

導電性粒子が、絶縁性粒子である核を導電層で被覆してなるものである場合、一層良好な導電性を得るために、導電層の厚みは100Å(10nm)以上であると好ましい。また、導電性粒子が、核としての遷移金属を主成分とする粒子又は核を被覆した遷移金属を主成分とする層の表面を、更に貴金属を主成分とする層で被覆してなるものである場合、最外層となる上記貴金属を主成分とする層の厚みは300Å(30nm)以上であると好ましい。この厚みが300Åを下回ると、最外層が破断しやすくなる。その結果、露出した遷移金属が接着剤成分と接触し、遷移金属による酸化還元作用により遊離ラジカルが発生しやすくなるため、ポットライフが容易に低下する傾向にある。一方、上記導電層の厚みが厚くなるとそれらの効果が飽和してくるので、その厚みを1μm以下にするのが好ましい。   In the case where the conductive particles are formed by covering nuclei that are insulating particles with a conductive layer, the thickness of the conductive layer is preferably 100 mm (10 nm) or more in order to obtain better conductivity. Further, the conductive particles are formed by coating the surface of a layer mainly composed of a transition metal as a nucleus or a layer mainly composed of a transition metal covering the nucleus with a layer mainly composed of a noble metal. In some cases, the thickness of the outermost layer mainly composed of the noble metal is preferably 300 mm (30 nm) or more. When this thickness is less than 300 mm, the outermost layer is easily broken. As a result, the exposed transition metal comes into contact with the adhesive component, and free radicals are easily generated due to the redox action of the transition metal, so that the pot life tends to be easily reduced. On the other hand, since the effect is saturated when the thickness of the conductive layer is increased, the thickness is preferably 1 μm or less.

フィルム状回路接続材料が導電性粒子を含有する場合、導電性粒子の配合割合は、特に制限を受けないが、フィルム状回路接続材料中の接着剤成分100体積部に対して0.1〜30体積部であることが好ましく、0.1〜10体積部であることがより好ましい。この値が、0.1体積部未満であると良好な導電性が得られ難くなる傾向にあり、30体積部を超えると回路等の短絡が起こりやすくなる傾向がある。なお、導電性粒子の配合割合(体積部)は、23℃におけるフィルム状回路接続材料を硬化させる前の各成分の体積に基づいて決定される。各成分の体積は、比重を利用して重量から体積に換算する方法や、その成分を溶解したり膨潤させたりせず、その成分をよくぬらす適当な溶媒(水、アルコール等)を入れたメスシリンダー等の容器にその成分を投入し、増加した体積から算出する方法によって求めることができる。また、フィルム状回路接続材料を2層以上に分割し、ラジカル重合開始剤を含有する層と導電性粒子を含有する層とに分割した場合、ポットライフの向上が得られる。   When the film-like circuit connecting material contains conductive particles, the blending ratio of the conductive particles is not particularly limited, but is 0.1 to 30 parts by volume with respect to 100 parts by volume of the adhesive component in the film-like circuit connecting material. It is preferable that it is a volume part, and it is more preferable that it is 0.1-10 volume part. If this value is less than 0.1 part by volume, good conductivity tends to be difficult to obtain, and if it exceeds 30 parts by volume, short circuits such as circuits tend to occur. In addition, the mixture ratio (volume part) of electroconductive particle is determined based on the volume of each component before hardening the film-form circuit connection material in 23 degreeC. The volume of each component is a method of converting from weight to volume using specific gravity, or a female containing an appropriate solvent (water, alcohol, etc.) that does not dissolve or swell the component but wets the component well The component can be obtained by charging the component into a container such as a cylinder and calculating from the increased volume. Further, when the film-like circuit connecting material is divided into two or more layers and divided into a layer containing a radical polymerization initiator and a layer containing conductive particles, an improvement in pot life can be obtained.

本発明に係るフィルム状回路接続材料はゴムを含有してもよい。これにより、応力の緩和及び接着性の向上が可能となる。ゴム微粒子は、粒子の平均粒径が、配合する導電性粒子の平均粒径の2倍以下であり、且つ室温(25℃)での貯蔵弾性率が導電性粒子及び回路接続材料の室温での貯蔵弾性率の1/2以下であるものであればよい。特に、ゴム微粒子の材質が、シリコーン、アクリルエマルジョン、SBR、NBR、ポリブタジエンゴムである微粒子は、単独で又は2種以上を混合して用いることが好適である。3次元架橋したこれらゴム微粒子は、耐溶剤性が優れており、フィルム状回路接続材料中に容易に分散される。   The film-like circuit connecting material according to the present invention may contain rubber. As a result, stress can be relaxed and adhesion can be improved. The rubber fine particles have an average particle size of not more than twice the average particle size of the conductive particles to be blended, and the storage elastic modulus at room temperature (25 ° C.) at the room temperature of the conductive particles and the circuit connecting material. What is necessary is just to be 1/2 or less of storage elastic modulus. In particular, it is preferable that the fine particles whose material of the rubber fine particles is silicone, acrylic emulsion, SBR, NBR, or polybutadiene rubber are used alone or in admixture of two or more. These three-dimensionally crosslinked rubber fine particles have excellent solvent resistance and are easily dispersed in the film-like circuit connecting material.

上述した成分で構成されるフィルム状回路接続材料は、回路部材の接続時に回路接続材料中の接着剤成分が溶融・流動し、対向する回路部材を接続した後、硬化して接続を保持するものである。このためフィルム状回路接続材料の流動性は重要な因子である。   The film-like circuit connection material composed of the above-mentioned components is one in which the adhesive component in the circuit connection material melts and flows at the time of connection of the circuit member, and after being connected to the opposite circuit member, it is cured to maintain the connection. It is. For this reason, the fluidity of the film-like circuit connecting material is an important factor.

例えば、厚み0.7mm、15mm×15mmのガラス板に、厚み35μm、5mm×5mmの回路接続材料を挟み、150℃、2MPaの条件で10秒間加熱及び加圧した場合に、初期の面積(A)と加熱及び加圧後の面積(B)とを用いて表される流動性(B)/(A)の値が1.3〜3.0であることが好ましく、1.5〜2.5であることがより好ましい。(B)/(A)の値が1.3未満の場合は流動性が悪く良好な回路部材の接続が得られない傾向がある。一方、(B)/(A)の値が3.0を超える場合は気泡が発生しやすく接続信頼性に劣る傾向がある。   For example, when a circuit connecting material having a thickness of 35 μm and a thickness of 5 mm × 5 mm is sandwiched between a glass plate having a thickness of 0.7 mm and 15 mm × 15 mm, and heated and pressed at 150 ° C. and 2 MPa for 10 seconds, the initial area (A ) And the area (B) after heating and pressurization, the value of fluidity (B) / (A) is preferably 1.3 to 3.0, and 1.5 to 2. 5 is more preferable. When the value of (B) / (A) is less than 1.3, there is a tendency that good circuit member connection cannot be obtained due to poor fluidity. On the other hand, when the value of (B) / (A) exceeds 3.0, bubbles are likely to be generated and connection reliability tends to be inferior.

フィルム状回路接続材料の硬化後の40℃での弾性率は、高温高湿時における接続抵抗の安定化及び接続信頼性保持の観点から100〜3000MPaであることが好ましく、500〜2000MPaであることがより好ましい。   The elastic modulus at 40 ° C. after curing of the film-like circuit connecting material is preferably 100 to 3000 MPa, and preferably 500 to 2000 MPa from the viewpoint of stabilization of connection resistance and maintaining connection reliability at high temperature and high humidity. Is more preferable.

さらには、このフィルム状回路接続材料には、硬化速度の制御や貯蔵安定性を付与するために、安定化剤を添加することができる。更にフィルム状回路接続材料には、充填材、軟化剤、促進剤、老化防止剤、着色剤、難燃化剤、チキソトロピック剤、フェノール樹脂、メラミン樹脂等を配合してもよい。   Furthermore, a stabilizer can be added to the film-like circuit connecting material in order to control the curing rate and to provide storage stability. Furthermore, a filler, a softening agent, an accelerator, an anti-aging agent, a colorant, a flame retardant, a thixotropic agent, a phenol resin, a melamine resin, and the like may be blended in the film-like circuit connecting material.

フィルム状回路接続材料は、充填材(フィラー)を含有した場合、接続信頼性等の向上が得られるので好ましい。充填材としては、絶縁性を有するものであって、その最大径が導電性粒子の平均粒径未満であれば使用できる。充填材の配合割合は、接着剤成分100体積部に対して、5〜60体積部であることが好ましい。充填材の配合割合が60体積部を超えると、信頼性向上の効果が飽和する傾向にあり、5体積部未満では充填材の添加効果が小さくなる傾向にある。   The film-like circuit connecting material is preferable when it contains a filler (filler) because it improves connection reliability and the like. The filler can be used if it has insulating properties and its maximum diameter is less than the average particle diameter of the conductive particles. The blending ratio of the filler is preferably 5 to 60 parts by volume with respect to 100 parts by volume of the adhesive component. When the blending ratio of the filler exceeds 60 parts by volume, the effect of improving the reliability tends to be saturated, and when it is less than 5 parts by volume, the effect of adding the filler tends to be small.

本発明のフィルム状回路接続材料は、上述した各成分を含む回路接続材料をフィルム状に形成して得る。このフィルム状回路接続材料は、回路接続材料に溶剤等を加えた混合液を、支持基材上に塗布し、又は不織布等の基材に上記混合液を含浸させて支持基材上に載置し、溶剤等を除去することによって得ることができる。   The film-like circuit connecting material of the present invention is obtained by forming a circuit connecting material containing the above-described components into a film shape. This film-like circuit connecting material is placed on a supporting substrate by applying a mixed solution obtained by adding a solvent or the like to the circuit connecting material on a supporting substrate, or impregnating the mixed solution into a substrate such as a nonwoven fabric. It can be obtained by removing the solvent and the like.

用いられる支持基材としては、シート状又はフィルム状のものが好ましい。また、支持基材は2層以上を積層した形状のものでもよい。支持基材としては、ポリエチレンテレフタレート(PET)フィルム、配向ポリプロピレン(OPP)フィルム、ポリエチレン(PE)フィルム及びポリイミドフィルムが挙げられる。それらの中でも、寸法精度の向上とコスト低減の点からPETフィルムが好ましい。   As the supporting substrate used, a sheet-like or film-like one is preferable. Further, the support substrate may have a shape in which two or more layers are laminated. Examples of the supporting substrate include a polyethylene terephthalate (PET) film, an oriented polypropylene (OPP) film, a polyethylene (PE) film, and a polyimide film. Among these, PET film is preferable from the viewpoint of improvement in dimensional accuracy and cost reduction.

上述のフィルム状回路接続材料は、熱膨張係数の異なる異種の被着体の回路接続材料としても使用することができる。具体的には、異方導電接着剤フィルム、銀フィルム等に代表されるフィルム状回路接続材料の他、CSP用エラストマー、CSP用アンダーフィル材、LOCテープ等に代表される半導体素子接着材料としても使用することができる。   The above-mentioned film-like circuit connecting material can also be used as a circuit connecting material for different types of adherends having different thermal expansion coefficients. Specifically, in addition to film-like circuit connection materials represented by anisotropic conductive adhesive films, silver films, etc., semiconductor device adhesive materials represented by CSP elastomers, CSP underfill materials, LOC tapes, etc. Can be used.

(回路部材の接続構造)
図1は、本発明に係る回路部材の接続構造一実施形態を示す概略断面図である。図1に示す回路部材の接続構造1は相互に対向する第1の回路部材20及び第2の回路部材30を備えており、第1の回路部材20と第2の回路部材30との間には、これらを接続する回路接続部10が設けられている。
(Circuit member connection structure)
FIG. 1 is a schematic sectional view showing an embodiment of a circuit member connection structure according to the present invention. The circuit member connection structure 1 shown in FIG. 1 includes a first circuit member 20 and a second circuit member 30 that face each other, and is between the first circuit member 20 and the second circuit member 30. Are provided with a circuit connecting portion 10 for connecting them.

第1の回路部材20は、第1の回路基板21と、第1の回路基板21の主面21a上に形成された第1の回路電極22とを有する。第2の回路部材30は、第2の回路基板31と、第2の回路基板31の主面31a上に形成された第2の回路電極32とを有する。第1の回路基板21の主面21a上、及び/又は第2の回路基板31の主面31a上には、場合により絶縁層(図示せず)が形成されていてもよい。つまり、絶縁層は、第1の回路部材20及び第2の回路部材30のうち少なくとも一方と回路接続部10との間に形成される。   The first circuit member 20 includes a first circuit board 21 and a first circuit electrode 22 formed on the main surface 21 a of the first circuit board 21. The second circuit member 30 includes a second circuit board 31 and a second circuit electrode 32 formed on the main surface 31 a of the second circuit board 31. An insulating layer (not shown) may be formed on the main surface 21 a of the first circuit board 21 and / or the main surface 31 a of the second circuit board 31 in some cases. That is, the insulating layer is formed between at least one of the first circuit member 20 and the second circuit member 30 and the circuit connection portion 10.

第1及び第2の回路基板21,31としては、半導体、ガラス、セラミック等の無機物、TCP、FPC、COFに体表されるポリイミド基材、ポリカーボネート、ポリエチレンテレフタレート、ポリエーテルスルホン、エポキシ樹脂、アクリル樹脂等の有機物、これらの無機物や有機物を複合化した材料からなる基板が挙げられる。回路接続部10との接着性を更に高める観点から、第1及び第2の回路基板のうち少なくとも一方は、ポリエチレンテレフタレート、ポリエーテルスルホン、エポキシ樹脂、アクリル樹脂、ポリイミド樹脂及びガラスからなる群より選ばれる少なくとも一種を含む材料からなる基板であることが好ましい。   Examples of the first and second circuit boards 21 and 31 include semiconductors, glass, ceramics and other inorganic materials, TCP, FPC, COF, polyimide base, polycarbonate, polyethylene terephthalate, polyethersulfone, epoxy resin, acrylic Examples thereof include substrates made of organic materials such as resins, and materials obtained by combining these inorganic materials and organic materials. From the viewpoint of further improving the adhesiveness with the circuit connection portion 10, at least one of the first and second circuit boards is selected from the group consisting of polyethylene terephthalate, polyethersulfone, epoxy resin, acrylic resin, polyimide resin, and glass. It is preferable that the substrate is made of a material containing at least one of the above.

また、絶縁層が形成されている場合、絶縁層は窒化シリコン、シリコーン樹脂、ポリイミド樹脂及びアクリル樹脂からなる群より選ばれる少なくとも一種を含む層であることが好ましい。これにより、上記層が形成されていないものに比べて、第1の回路基板21及び/又は第2の回路基板31と回路接続部10との接着性がより一層向上する。   In the case where an insulating layer is formed, the insulating layer is preferably a layer containing at least one selected from the group consisting of silicon nitride, silicone resin, polyimide resin, and acrylic resin. Thereby, the adhesiveness of the 1st circuit board 21 and / or the 2nd circuit board 31 and the circuit connection part 10 improves further compared with the thing in which the said layer is not formed.

第1の回路電極22及び第2の回路電極32のうち少なくとも一方は、その表面が金、銀、錫、白金族の金属及びインジウム−錫酸化物からなる群より選ばれる少なくとも一種を含む材料からなることが好ましい。これにより、同一回路部材20又は30上で隣り合う回路電極22又は32同士の間で絶縁性を維持しつつ、対向する回路電極22及び33間の抵抗値をより一層低減させることができる。   At least one of the first circuit electrode 22 and the second circuit electrode 32 is made of a material whose surface includes at least one selected from the group consisting of gold, silver, tin, platinum group metals, and indium-tin oxide. It is preferable to become. Thereby, the resistance value between the circuit electrodes 22 and 33 which oppose can be reduced further, maintaining insulation between the circuit electrodes 22 or 32 adjacent on the same circuit member 20 or 30. FIG.

第1及び第2の回路部材20,30の具体例としては、液晶ディスプレイに用いられている、ITO等で回路電極が形成されたガラス基板又はプラスチック基板や、プリント配線板、セラミック配線板、フレキシブル配線板、半導体シリコンチップ等が挙げられる。これらは必要に応じて組み合わせて使用される。   Specific examples of the first and second circuit members 20 and 30 include a glass substrate or a plastic substrate on which circuit electrodes are formed of ITO or the like, a printed wiring board, a ceramic wiring board, a flexible, used for a liquid crystal display. A wiring board, a semiconductor silicon chip, etc. are mentioned. These are used in combination as necessary.

回路接続部10は、導電性粒子を含有する上記フィルム状回路接続材料の硬化物から形成されている。回路接続部10は、回路接続材料中に含まれる接着剤成分の硬化物11と、接着剤成分の硬化物11内に分散している導電性粒子7とから構成される。回路接続部10中の導電性粒子7は、対向する第1の回路電極22と第2の回路電極32との間のみならず、主面21a,31a同士間にも配置されている。回路部材の接続構造1においては、導電性粒子7が第1及び第2の回路電極22,32の双方に直接接触している。これにより、第1及び第2の回路電極22,32が、導電性粒子7を介して電気的に接続されている。このため、同一回路部材上で隣り合う回路電極間の絶縁性を維持しつつ、第1の回路電極22及び第2の回路電極32間の接続抵抗が十分に低減される。したがって、第1及び第2の回路電極22,32の間の電流の流れを円滑にすることができ、回路の持つ機能を十分に発揮することができる。なお、回路接続部10が導電性粒子7を含有していない場合には、第1の回路電極22と第2の回路電極32とが直接接触することで、電気的に接続される。   The circuit connection part 10 is formed from the hardened | cured material of the said film-form circuit connection material containing electroconductive particle. The circuit connection part 10 is comprised from the hardened | cured material 11 of the adhesive agent component contained in a circuit connection material, and the electroconductive particle 7 currently disperse | distributed in the hardened | cured material 11 of an adhesive agent component. The conductive particles 7 in the circuit connection part 10 are arranged not only between the first circuit electrode 22 and the second circuit electrode 32 facing each other but also between the main surfaces 21a and 31a. In the circuit member connection structure 1, the conductive particles 7 are in direct contact with both the first and second circuit electrodes 22 and 32. Thereby, the first and second circuit electrodes 22 and 32 are electrically connected via the conductive particles 7. For this reason, the connection resistance between the 1st circuit electrode 22 and the 2nd circuit electrode 32 is fully reduced, maintaining the insulation between the circuit electrodes which adjoin on the same circuit member. Therefore, the flow of current between the first and second circuit electrodes 22 and 32 can be made smooth, and the functions of the circuit can be fully exhibited. In addition, when the circuit connection part 10 does not contain the electroconductive particle 7, the 1st circuit electrode 22 and the 2nd circuit electrode 32 are electrically connected by contacting directly.

回路接続部10は、後述するように上記フィルム状回路接続材料の硬化物により構成されていることから、第1の回路部材20及び第2の回路部材30に対する回路接続部10の接着力が十分に高い。   Since the circuit connection portion 10 is made of a cured product of the film-like circuit connection material as will be described later, the adhesive force of the circuit connection portion 10 to the first circuit member 20 and the second circuit member 30 is sufficient. Very expensive.

(回路部材の接続構造の製造方法)
図2は、本発明に係る回路部材の接続構造の製造方法の一実施形態を概略断面図により示す工程図である。
(Method for manufacturing circuit member connection structure)
FIG. 2 is a process diagram schematically showing a cross-sectional view of an embodiment of a method for manufacturing a circuit member connection structure according to the present invention.

本実施形態では、まず、上述した第1の回路部材20と、フィルム状回路接続材料40を用意する。フィルム状回路接続材料40は、フィルム形成材と、ラジカル重合性化合物と、加熱により遊離ラジカルを発生するラジカル重合開始剤と、イソシアネート基含有化合物とを含有する接着剤成分5及び導電性粒子7を含む。   In this embodiment, first, the first circuit member 20 and the film-like circuit connecting material 40 described above are prepared. The film-like circuit connecting material 40 comprises an adhesive component 5 and conductive particles 7 containing a film forming material, a radical polymerizable compound, a radical polymerization initiator that generates free radicals upon heating, and an isocyanate group-containing compound. Including.

なお、導電性粒子7を含まない回路接続材料を用いることもできる。この場合、回路接続材料はNCP(Non Conductive Paste)と呼ばれることもある。一方、導電性粒子7を含む回路接続材料は、ACP(Anisotropic Conductive Paste)と呼ばれることもある。   A circuit connecting material that does not contain the conductive particles 7 can also be used. In this case, the circuit connection material may be called NCP (Non Conductive Paste). On the other hand, the circuit connection material containing the conductive particles 7 may be called ACP (Anisotropic Conductive Paste).

フィルム状回路接続材料40の厚さは、5〜50μmであることが好ましい。フィルム状回路接続材料40の厚さが5μm未満では、第1及び第2の回路電極22,32間にフィルム状回路接続材料40が充填不足となる傾向がある。他方、50μmを超えると、第1及び第2の回路電極22,32間の導通の確保が困難となる傾向がある。   The thickness of the film-like circuit connecting material 40 is preferably 5 to 50 μm. If the thickness of the film-like circuit connecting material 40 is less than 5 μm, the film-like circuit connecting material 40 tends to be insufficiently filled between the first and second circuit electrodes 22 and 32. On the other hand, when it exceeds 50 μm, it tends to be difficult to ensure conduction between the first and second circuit electrodes 22 and 32.

次に、フィルム状回路接続材料40を第1の回路部材20の回路電極22が形成されている面上に載せる。そして、フィルム状回路接続材料40を、図2(a)の矢印A及びB方向に加圧し、フィルム状回路接続材料40を第1の回路部材20に仮接続する(図2(b))。   Next, the film-like circuit connecting material 40 is placed on the surface of the first circuit member 20 on which the circuit electrodes 22 are formed. And the film-form circuit connection material 40 is pressurized to the arrow A and B direction of Fig.2 (a), and the film-form circuit connection material 40 is temporarily connected to the 1st circuit member 20 (FIG.2 (b)).

このときの圧力は回路部材に損傷を与えない範囲であれば特に制限されないが、一般的には0.1〜30MPaとすることが好ましい。また、加熱しながら加圧してもよく、加熱温度はフィルム状回路接続材料40が実質的に硬化しない温度とする。加熱温度は一般的には50〜190℃にするのが好ましい。これらの加熱及び加圧は0.5〜120秒間の範囲で行うことが好ましい。   Although the pressure at this time will not be restrict | limited especially if it is a range which does not damage a circuit member, Generally it is preferable to set it as 0.1-30 Mpa. Moreover, you may pressurize, heating, and let heating temperature be the temperature which the film-form circuit connection material 40 does not harden | cure substantially. In general, the heating temperature is preferably 50 to 190 ° C. These heating and pressurization are preferably performed in the range of 0.5 to 120 seconds.

次いで、図2(c)に示すように、第2の回路部材30を、第2の回路電極32を第1の回路部材20の側に向けるようにしてフィルム状回路接続材料40上に載せる。なお、フィルム状回路接続材料40が支持基材(図示せず)上に密着して設けられている場合には、支持基材を剥離してから第2の回路部材30をフィルム状回路接続材料40上に載せる。そして、フィルム状回路接続材料40を加熱しながら、図2(c)の矢印A及びB方向に全体を加圧する。また、フィルム状回路接続材料40は、支持基材上に設けられたまま放置しても、十分に長い可使時間を有し、かつ、十分に高い回路部材との接着性を保持している。   Next, as shown in FIG. 2C, the second circuit member 30 is placed on the film-like circuit connection material 40 so that the second circuit electrode 32 faces the first circuit member 20 side. When the film-like circuit connection material 40 is provided in close contact with a support base (not shown), the second circuit member 30 is removed from the support base after the second base member 30 is peeled off. 40. And the whole is pressurized in the arrow A and B direction of FIG.2 (c), heating the film-form circuit connection material 40. FIG. In addition, the film-like circuit connecting material 40 has a sufficiently long pot life even when left on the support base material, and maintains sufficiently high adhesion to the circuit member. .

加熱温度は、例えば、90〜200℃とし、接続時間は例えば1秒〜10分とする。これらの条件は、使用する用途、フィルム状回路接続材料、回路部材によって適宜選択され、必要に応じて、後硬化を行ってもよい。例えば、フィルム状回路接続材料がラジカル重合性化合物を含有する場合の加熱温度は、ラジカル重合開始剤がラジカルを発生可能な温度とする。これにより、ラジカル重合開始剤においてラジカルが発生し、ラジカル重合性化合物の重合が開始される。   The heating temperature is, for example, 90 to 200 ° C., and the connection time is, for example, 1 second to 10 minutes. These conditions are appropriately selected depending on the intended use, the film-like circuit connecting material, and the circuit member, and may be post-cured as necessary. For example, the heating temperature when the film-like circuit connecting material contains a radically polymerizable compound is a temperature at which the radical polymerization initiator can generate radicals. As a result, radicals are generated in the radical polymerization initiator, and polymerization of the radical polymerizable compound is started.

フィルム状回路接続材料40の加熱により、第1の回路電極22と第2の回路電極32との間の距離を十分に小さくした状態でフィルム状回路接続材料40が硬化して、第1の回路部材20と第2の回路部材30とが回路接続部10を介して強固に接続される。   By heating the film-like circuit connecting material 40, the film-like circuit connecting material 40 is cured in a state where the distance between the first circuit electrode 22 and the second circuit electrode 32 is sufficiently small, and the first circuit The member 20 and the second circuit member 30 are firmly connected via the circuit connection portion 10.

フィルム状回路接続材料40の硬化により回路接続部10が形成されて、図1に示すような回路部材の接続構造1が得られる。なお、接続の条件は、使用する用途、フィルム状回路接続材料、回路部材によって適宜選択される。   The circuit connection portion 10 is formed by curing the film-like circuit connection material 40, and a circuit member connection structure 1 as shown in FIG. 1 is obtained. The connection conditions are appropriately selected depending on the application to be used, the film-like circuit connection material, and the circuit member.

本実施形態によれば、得られる回路部材の接続構造1において、導電性粒子7を対向する第1及び第2の回路電極22,32の双方に接触させることが可能となり、同一回路部材上で隣り合う回路電極間の絶縁性を維持しつつ、対向する第1及び第2の回路電極22,32間の接続抵抗を十分に低減することができる。そして、回路接続部10が上記フィルム状回路接続材料の硬化物により構成されていることから、第1及び第2の回路部材20又は30に対する回路接続部10の接着力が十分に高いものとなる。   According to the present embodiment, in the obtained circuit member connection structure 1, the conductive particles 7 can be brought into contact with both the first and second circuit electrodes 22 and 32 facing each other, and on the same circuit member. The connection resistance between the first and second circuit electrodes 22 and 32 facing each other can be sufficiently reduced while maintaining insulation between adjacent circuit electrodes. And since the circuit connection part 10 is comprised with the hardened | cured material of the said film-form circuit connection material, the adhesive force of the circuit connection part 10 with respect to the 1st and 2nd circuit member 20 or 30 will become a thing high enough. .

以上、本発明の好適な実施形態について説明したが、本発明はこれに制限されるものではない。本発明は、その要旨を逸脱しない範囲で様々な変形が可能である。   As mentioned above, although preferred embodiment of this invention was described, this invention is not restrict | limited to this. The present invention can be variously modified without departing from the gist thereof.

以下に、本発明を実施例に基づいて具体的に説明するが、本発明はこれに制限されるものではない。   Hereinafter, the present invention will be specifically described based on examples, but the present invention is not limited thereto.

(導電性粒子の作製)
ポリスチレン粒子の表面上に、厚み0.2μmのニッケルからなる層を設け、更にこのニッケルからなる層の表面上に、厚み0.04μmの金からなる層を設けた。こうして平均粒径10μmの導電性粒子を得た。
(Preparation of conductive particles)
A layer made of nickel having a thickness of 0.2 μm was provided on the surface of the polystyrene particles, and a layer made of gold having a thickness of 0.04 μm was further provided on the surface of the layer made of nickel. Thus, conductive particles having an average particle diameter of 10 μm were obtained.

(ウレタンアクリレートの調整)
重量平均分子量800のポリカプロラクトンジオール400質量部、2−ヒドロキシプロピルアクリレート131質量部、触媒としてのジブチル錫ジラウレート0.5質量部及び重合禁止剤としてのハイドロキノンモノメチルエーテル1.0質量部を、50℃に加熱しながら攪拌して混合した。次いで、イソホロンジイソシアネート222質量部を滴下し、更に攪拌しながら80℃に昇温してウレタン化反応を進行させた。イソシアネート基の反応率が99%以上になったことを確認後、温度を下げて、ウレタンアクリレートを得た。
(Adjustment of urethane acrylate)
400 parts by mass of polycaprolactone diol having a weight average molecular weight of 800, 131 parts by mass of 2-hydroxypropyl acrylate, 0.5 parts by mass of dibutyltin dilaurate as a catalyst and 1.0 part by mass of hydroquinone monomethyl ether as a polymerization inhibitor The mixture was stirred while heating. Next, 222 parts by mass of isophorone diisocyanate was added dropwise, and the temperature was raised to 80 ° C. while stirring to advance the urethanization reaction. After confirming that the reaction rate of the isocyanate group was 99% or more, the temperature was lowered to obtain urethane acrylate.

(ポリエステルウレタン樹脂の調製)
ジガルボン酸としてテレフタル酸と、ジオールとしてプロピレングリコールとの反応によりポリエステルポリオールを得た。このポリエステルポリオールをメチルエチルケトン(MEK)に溶解して溶液を得た。得られた溶液を、撹拌機、温度計、コンデンサーおよび真空発生装置と窒素ガス導入管を具備したヒーター付きステンレススチール製オートクレーブに投入した。次いで、上記オートクレーブに、イソシアネートにとして4,4’−ジフェニルメタンジイソシアネートを所定量投入し、触媒としてジブチル錫ラウレートをポリエステルポリオール100質量部に対して0.02質量部となる量投入し、75℃で10時間反応させた後、40℃まで冷却した。さらに、ピペラジンを加えて30分反応させることにより鎖延長した後、トリエチルアミンで中和させた。
(Preparation of polyester urethane resin)
Polyester polyol was obtained by reaction of terephthalic acid as digalbonic acid and propylene glycol as diol. This polyester polyol was dissolved in methyl ethyl ketone (MEK) to obtain a solution. The obtained solution was put into a stainless steel autoclave equipped with a heater equipped with a stirrer, a thermometer, a condenser, a vacuum generator, and a nitrogen gas introduction tube. Next, a predetermined amount of 4,4′-diphenylmethane diisocyanate is added as an isocyanate to the autoclave, and dibutyltin laurate is added as a catalyst in an amount of 0.02 parts by mass with respect to 100 parts by mass of the polyester polyol. After reacting for 10 hours, the mixture was cooled to 40 ° C. Further, piperazine was added and reacted for 30 minutes to extend the chain, and then neutralized with triethylamine.

上記反応後の溶液を純水に滴下すると、溶剤及び触媒が水に溶解するとともに、ポリエステルウレタン樹脂が析出した。そして、析出したポリエステルウレタン樹脂を真空乾燥機で乾燥した。ポリエステルウレタン樹脂の重量分子量をGPC分析によって測定したところ、27000であった。なお、上記ポリエステルウレタン樹脂を調製する際、テレフタル酸/プロピレングリコール/4,4’−ジフェニルメタンジイソシアネートの配合モル比は、1.0/1.3/0.25であった。   When the solution after the reaction was dropped into pure water, the solvent and the catalyst were dissolved in water, and the polyester urethane resin was precipitated. And the precipitated polyester urethane resin was dried with the vacuum dryer. It was 27000 when the weight molecular weight of the polyester urethane resin was measured by GPC analysis. In preparing the polyester urethane resin, the blending molar ratio of terephthalic acid / propylene glycol / 4,4′-diphenylmethane diisocyanate was 1.0 / 1.3 / 0.25.

(フェノキシ樹脂の調整)
フェノキシ樹脂(ユニオンカーバイド社製、商品名「PKHC」、重量平均分子量:45000)50gを、質量比でトルエン(沸点110.6℃、SP値8.90)/酢酸エチル(沸点77.1℃、SP値9.10)=50/50の混合溶剤に溶解して、固形分40質量%の溶液とした。
(Adjustment of phenoxy resin)
50 g of phenoxy resin (trade name “PKHC”, manufactured by Union Carbide Corporation, weight average molecular weight: 45000) in terms of mass ratio is toluene (boiling point 110.6 ° C., SP value 8.90) / ethyl acetate (boiling point 77.1 ° C., It was dissolved in a mixed solvent of SP value 9.10) = 50/50 to obtain a solution having a solid content of 40% by mass.

(含フッ素ポリイミド樹脂の調製)
ディーンスターク還流冷却器、温度計、撹拌器を備えた1000mLのセパラブルフラスコを用意した。そこにジアミン化合物としてポリオキシプロピレンジアミン15.0mmol、2,2−ビス[4−(4−アミノフェノキシ)フェニル]ヘキサフルオロプロパン105.0mmol、非プロトン性極性溶媒としてN−メチル−2−ピロリドン287gを加え、室温(25℃)で30分間撹拌した。次いで、水と共沸可能な芳香族炭化水素系有機溶媒としてトルエン180g、テトラカルボン酸二無水物として4,4’−ヘキサフルオロプロピリデンビスフタル酸二無水物114.0mmolを加え、50℃まで昇温して、その温度で1時間攪拌した後、さらに160℃まで昇温して3時間還流させた。水分定量受器に理論量の水がたまり、水の流出が見られなくなっていることを確認したら、水分定量受器中の水とトルエンを除去し、180℃まで上昇して反応溶液中のトルエンを除去し、ポリイミド樹脂のNMP溶液を得た。
(Preparation of fluorine-containing polyimide resin)
A 1000 mL separable flask equipped with a Dean-Stark reflux condenser, a thermometer, and a stirrer was prepared. There, 15.0 mmol of polyoxypropylenediamine as a diamine compound, 105.0 mmol of 2,2-bis [4- (4-aminophenoxy) phenyl] hexafluoropropane, and 287 g of N-methyl-2-pyrrolidone as an aprotic polar solvent And stirred at room temperature (25 ° C.) for 30 minutes. Next, 180 g of toluene is added as an aromatic hydrocarbon-based organic solvent azeotropic with water, and 114.0 mmol of 4,4′-hexafluoropropylidenebisphthalic dianhydride is added as a tetracarboxylic dianhydride, up to 50 ° C. The temperature was raised and the mixture was stirred at that temperature for 1 hour, and further heated to 160 ° C. and refluxed for 3 hours. After confirming that the theoretical amount of water has accumulated in the moisture determination receiver and that no water has flowed out, remove the water and toluene in the moisture determination receiver, and raise the temperature to 180 ° C. Then, an NMP solution of polyimide resin was obtained.

上記ポリイミド樹脂のNMP溶液をメタノール中に投入し、析出物を回収後、粉砕、乾燥して含フッ素ポリイミド樹脂を得た。得られた含フッ素ポリイミド樹脂も重量平均分子量は112000であった。上記含フッ素ポリイミド樹脂をメチルエチルケトンに40質量%となるように溶解した。   The NMP solution of the polyimide resin was put into methanol, and the precipitate was collected, then pulverized and dried to obtain a fluorine-containing polyimide resin. The obtained fluorine-containing polyimide resin also had a weight average molecular weight of 112,000. The fluorine-containing polyimide resin was dissolved in methyl ethyl ketone so as to be 40% by mass.

下記表2及び3に示す配合比(質量部:固形分換算)で、実施例及び比較例の回路接続材料を調整し、フィルム状回路接続材料を作製した。   The circuit connection materials of Examples and Comparative Examples were adjusted at the blending ratios (parts by mass: solid content conversion) shown in Tables 2 and 3 below, and film-like circuit connection materials were produced.

(実施例1)
フィルム形成材としてポリエステルウレタン樹脂60質量部、ラジカル重合性化合物として上記ウレタンアクリレート40質量部及びリン酸エステル型アクリレート(共栄社油脂社製、商品名「P2M」)1質量部、イソシアネート基含有化合物としてメタクリロイルイソシアネート0.5質量部、ラジカル重合開始剤としてt−ヘキシルパーオキシ−2−エチルヘキサノエート5質量部を混合した。次に、上記成分100体積部に対して上記導電性粒子を3体積%配合分散させて、回路接続材料を調整した。次いで、この回路接続材料を厚み80μmの片面を表面処理したPETフィルムに塗工装置を用いて塗布して塗膜を得た。次に、その塗膜を70℃で10分間熱風乾燥することにより、厚さが20μmのフィルム状回路接続材料を得た。
Example 1
60 parts by mass of a polyester urethane resin as a film-forming material, 40 parts by mass of the urethane acrylate as a radical polymerizable compound, and 1 part by mass of a phosphate ester acrylate (manufactured by Kyoeisha Yushi Co., Ltd., trade name “P2M”), methacryloyl as an isocyanate group-containing compound 0.5 parts by mass of isocyanate and 5 parts by mass of t-hexylperoxy-2-ethylhexanoate as a radical polymerization initiator were mixed. Next, 3% by volume of the conductive particles were mixed and dispersed with respect to 100 parts by volume of the component to prepare a circuit connecting material. Next, this circuit connecting material was applied to a PET film having a surface treated on one side having a thickness of 80 μm using a coating apparatus to obtain a coating film. Next, the coating film was dried with hot air at 70 ° C. for 10 minutes to obtain a film-like circuit connecting material having a thickness of 20 μm.

(実施例2)
メタクリロイルイソシアネート0.5質量部に代えて、ヘキサメチレンジイソシアネート0.5質量部を用いた以外は実施例1と同様にしてフィルム状回路接続材料を得た。
(Example 2)
A film-like circuit connecting material was obtained in the same manner as in Example 1 except that 0.5 part by mass of hexamethylene diisocyanate was used instead of 0.5 part by mass of methacryloyl isocyanate.

(実施例3)
メタクリロイルイソシアネート0.5質量部に代えて、γ−イソシアネートプロピルトリエトキシシラン0.5質量部を用いた以外は実施例1と同様にしてフィルム状回路接続材料を得た。
(Example 3)
A film-like circuit connecting material was obtained in the same manner as in Example 1 except that 0.5 part by mass of γ-isocyanatopropyltriethoxysilane was used instead of 0.5 part by mass of methacryloyl isocyanate.

(実施例4)
メタクリロイルイソシアネート0.5質量部に代えて、γ−イソシアネートプロピルトリエトキシシラン0.1質量部を用いた以外は実施例1と同様にしてフィルム状回路接続材料を得た。
Example 4
A film-like circuit connecting material was obtained in the same manner as in Example 1 except that 0.1 part by mass of γ-isocyanatopropyltriethoxysilane was used instead of 0.5 part by mass of methacryloyl isocyanate.

(実施例5)
メタクリロイルイソシアネート0.5質量部に代えて、γ−イソシアネートプロピルトリエトキシシラン3質量部を用いた以外は実施例1と同様にしてフィルム状回路接続材料を得た。
(Example 5)
A film-like circuit connecting material was obtained in the same manner as in Example 1 except that 3 parts by mass of γ-isocyanatopropyltriethoxysilane was used instead of 0.5 parts by mass of methacryloyl isocyanate.

(実施例6)
メタクリロイルイソシアネート0.5質量部に代えて、γ−イソシアネートプロピルトリエトキシシラン5質量部を用いた以外は実施例1と同様にしてフィルム状回路接続材料を得た。
(Example 6)
A film-like circuit connecting material was obtained in the same manner as in Example 1 except that 5 parts by mass of γ-isocyanatopropyltriethoxysilane was used instead of 0.5 parts by mass of methacryloyl isocyanate.

(実施例7)
ポリエステルウレタン樹脂60質量部に代えて、フェノキシ樹脂60質量部を用いた以外は実施例5と同様にしてフィルム状回路接続材料を得た。
(Example 7)
A film-like circuit connecting material was obtained in the same manner as in Example 5 except that 60 parts by mass of the phenoxy resin was used instead of 60 parts by mass of the polyester urethane resin.

(実施例8)
ポリエステルウレタン樹脂60質量部に代えて、ポリエステルウレタン樹脂55質量部及び含フッ素ポリイミド樹脂5質量部を用いた以外は実施例1と同様にしてフィルム状回路接続材料を得た。
(Example 8)
A film-like circuit connecting material was obtained in the same manner as in Example 1 except that 55 parts by mass of polyester urethane resin and 5 parts by mass of fluorine-containing polyimide resin were used instead of 60 parts by mass of polyester urethane resin.

(比較例1)
メタクリロイルイソシアネートを使用しない以外は実施例1と同様にフィルム状回路接続材料を得た。
(Comparative Example 1)
A film-like circuit connecting material was obtained in the same manner as in Example 1 except that methacryloyl isocyanate was not used.

(比較例2)
メタクリロイルイソシアネート0.5質量部に代えて、γ−イソシアネートプロピルトリエトキシシラン0.05質量部を用いた以外は実施例1と同様にしてフィルム状回路接続材料を得た。
(Comparative Example 2)
A film-like circuit connecting material was obtained in the same manner as in Example 1 except that 0.05 part by mass of γ-isocyanatopropyltriethoxysilane was used instead of 0.5 part by mass of methacryloyl isocyanate.

(比較例3)
メタクリロイルイソシアネート0.5質量部に代えて、γ−イソシアネートプロピルトリエトキシシラン7.5質量部を用いた以外は実施例1と同様にしてフィルム状回路接続材料を得た。
(Comparative Example 3)
A film-like circuit connecting material was obtained in the same manner as in Example 1 except that 7.5 parts by mass of γ-isocyanatopropyltriethoxysilane was used instead of 0.5 parts by mass of methacryloyl isocyanate.

Figure 2008139996
Figure 2008139996

Figure 2008139996
Figure 2008139996

<回路部材の接続構造の作製>
ライン幅50μm、ピッチ100μm及び厚み18μmの銅回路配線500本を、ポリイミドフィルムA(宇部興産社製、商品名「ユーピレックス」、厚み75μm)上に、接着剤層を介して形成した3層フレキシブル基板1(FPC基板1)を準備した。また、ライン幅50μm、ピッチ100μm及び厚み8μmの銅回路配線500本をポリイミドフィルムB(宇部興産社製、商品名「ユーピレックス」、厚み25μm)上に直接形成した2層フレキシブル基板2(FPC基板2)を準備した。さらに、ライン幅50μm、ピッチ100μm及び厚み0.4μmのクロム回路配線500本をガラス(コーニング社製、商品名「#1737」)上に直接形成したガラス基板を準備した。
<Production of circuit member connection structure>
A three-layer flexible substrate in which 500 copper circuit wiring lines having a line width of 50 μm, a pitch of 100 μm, and a thickness of 18 μm are formed on a polyimide film A (Ube Industries, trade name “UPILEX”, thickness of 75 μm) via an adhesive layer. 1 (FPC board 1) was prepared. In addition, a two-layer flexible substrate 2 (FPC substrate 2) in which 500 copper circuit wires having a line width of 50 μm, a pitch of 100 μm, and a thickness of 8 μm are directly formed on a polyimide film B (trade name “UPILEX”, thickness 25 μm, manufactured by Ube Industries). ) Was prepared. Furthermore, a glass substrate was prepared in which 500 chrome circuit wires having a line width of 50 μm, a pitch of 100 μm, and a thickness of 0.4 μm were directly formed on glass (product name “# 1737” manufactured by Corning).

次いで、上記各FPC基板とガラス基板との間に上述のようにして得られたフィルム状回路接続材料を配置した。そして、熱圧着装置(加熱方式:コンスタントヒート型、東レエンジニアリング株式会社製)を用いて、160℃、3MPaの条件下、それらの積層方向に10秒間の加熱及び加圧を行った。こうして、幅2mmにわたりFPC基板とガラス基板とを回路接続材料の硬化物により電気的に接続した回路部材の接続構造を作製した。このようにして作製した回路部材の接続構造を初期特性評価用サンプルとした。   Subsequently, the film-like circuit connecting material obtained as described above was disposed between each of the FPC substrates and the glass substrate. Then, using a thermocompression bonding apparatus (heating method: constant heat type, manufactured by Toray Engineering Co., Ltd.), heating and pressurization were performed for 10 seconds in the stacking direction under the conditions of 160 ° C. and 3 MPa. Thus, a circuit member connection structure in which the FPC substrate and the glass substrate were electrically connected with a cured product of the circuit connection material over a width of 2 mm was produced. The circuit member connection structure thus produced was used as an initial characteristic evaluation sample.

[接着性の評価]
接着性は、下記に示すように、上述のようにして作製した回路部材の接続構造における回路間の接続抵抗及び接着強度の測定、及び、回路部材の接続構造における接続外観の観察をすることで評価した。なお、初期特性評価用サンプルについて、接続抵抗、接着強度及び接続外観の全てが良好であるものを接着性に十分に優れるものとする。
[Evaluation of adhesion]
As shown below, the adhesiveness is measured by measuring the connection resistance and adhesive strength between circuits in the circuit member connection structure produced as described above, and observing the connection appearance in the circuit member connection structure. evaluated. In addition, as for the sample for initial characteristic evaluation, a sample having excellent connection resistance, adhesive strength, and connection appearance is sufficiently excellent in adhesiveness.

<接続抵抗の測定>
接続抵抗は、マルチメータ(アドバンテスト社製、商品名:TR6848)で測定し、隣接する回路間の抵抗150点の平均(x+3σ)で示した。結果を表4及び5に示す。ここで、表4は、FPC1/ガラス基板接続サンプルの評価結果であり、表5は、FPC2/ガラス基板接続サンプルの評価結果である。
<Measurement of connection resistance>
The connection resistance was measured with a multimeter (trade name: TR6848, manufactured by Advantest Corporation), and indicated as an average (x + 3σ) of 150 resistances between adjacent circuits. The results are shown in Tables 4 and 5. Here, Table 4 shows the evaluation results of the FPC1 / glass substrate connection sample, and Table 5 shows the evaluation results of the FPC2 / glass substrate connection sample.

<接着強度の測定>
接着強度は、JIS−Z0237に準じて90度剥離法で測定した。接着強度の測定装置としては、テンシロンUTM−4(剥離速度50mm/min、25℃、東洋ボールドウィン社製)を使用した。結果を表4及び5に示す。
<Measurement of adhesive strength>
The adhesive strength was measured by a 90-degree peeling method according to JIS-Z0237. Tensilon UTM-4 (peeling speed 50 mm / min, 25 ° C., manufactured by Toyo Baldwin Co., Ltd.) was used as an adhesive strength measuring device. The results are shown in Tables 4 and 5.

<接続外観の観察>
回路部材の接続構造を85℃、相対湿度85%RHの恒温恒湿試験装置内に250時間投入し、耐湿試験を行った。そして、接着直後と耐湿試験後の外観をガラス基板側から顕微鏡で観察した。回路接続部と回路間スペース界面との間で剥離が生じた場合、回路間の絶縁性が大幅に低下するためNGと判定した。結果を表4及び5に示す。
<Observation of connection appearance>
The circuit member connection structure was placed in a constant temperature and humidity test apparatus at 85 ° C. and a relative humidity of 85% RH for 250 hours to perform a moisture resistance test. And the external appearance immediately after adhesion | attachment and a moisture resistance test was observed with the microscope from the glass substrate side. When peeling occurred between the circuit connection portion and the inter-circuit space interface, the insulation between the circuits was significantly deteriorated, so that it was determined as NG. The results are shown in Tables 4 and 5.

[可使時間の評価]
実施例及び比較例で得られたフィルム状回路接続材料をそれぞれ真空包装材に収容し、40℃で5日間放置した後、上記と同様にして回路部材の接続構造を作製し、可使時間評価用サンプルとした。そして、可使時間評価用サンプルについても、上記と同様に接着性を評価した。結果を表4及び5に示す。接着性の評価において、可使時間評価用サンプルの各特性が、初期特性評価用サンプルの各特性と比較し変化が小さく、初期特性を維持している場合、可使時間が長いと判定した。
[Evaluation of pot life]
Each of the film-like circuit connection materials obtained in the examples and comparative examples is housed in a vacuum packaging material and left to stand at 40 ° C. for 5 days. Then, a circuit member connection structure is prepared in the same manner as described above, and the pot life is evaluated. A sample was used. And the adhesiveness was also evaluated in the same manner as described above for the sample for evaluating the pot life. The results are shown in Tables 4 and 5. In the evaluation of adhesiveness, it was determined that the pot life was long when each characteristic of the sample for pot life evaluation was smaller than the characteristics of the sample for initial characteristic evaluation and the initial characteristics were maintained.

Figure 2008139996
Figure 2008139996

Figure 2008139996
Figure 2008139996

表4及び5からわかるように、初期の接続抵抗は、実施例及び比較例とも、1Ω前後であった。また、初期の接着強度は、実施例及び比較例とも、7N/cm以上であった。特に実施例5、6では、イソシアネート基含有化合物の配合量の増加に伴い、接着強度が高くなった。また、実施例8では、含フッ素ポリイミドを使用することで、FPC2/ガラス基板接続サンプルの接着強度が向上した。   As can be seen from Tables 4 and 5, the initial connection resistance was about 1Ω in both the examples and the comparative examples. Moreover, the initial adhesive strength was 7 N / cm or more in both Examples and Comparative Examples. Particularly in Examples 5 and 6, the adhesive strength increased with an increase in the amount of the isocyanate group-containing compound. In Example 8, the adhesive strength of the FPC2 / glass substrate connection sample was improved by using fluorine-containing polyimide.

実施例1〜3、5〜8及び比較例3で得られたフィルム状回路接続材料を用いた場合、いずれも剥離は観察されなかった。なお、実施例4で得られたフィルム状回路接続材料は、イソシアネート基含有化合物の量が少ないため、耐湿試験後のFPC1/ガラス基板接続サンプルで微量の剥離が観察されたが、使用上問題がないレベルであった。これに対し、イソシアネート基含有化合物を含有しない比較例1、イソシネート基含有化合物の配合量がさらに少ない比較例2では、耐湿試験後に剥離が発生した。   When the film-like circuit connecting materials obtained in Examples 1 to 3 and 5 to 8 and Comparative Example 3 were used, no peeling was observed. In addition, since the film-like circuit connecting material obtained in Example 4 has a small amount of isocyanate group-containing compound, a slight amount of peeling was observed in the FPC1 / glass substrate connecting sample after the moisture resistance test, but there was a problem in use. There was no level. On the other hand, in Comparative Example 1 that does not contain an isocyanate group-containing compound and Comparative Example 2 in which the blending amount of the isocyanate group-containing compound is further small, peeling occurred after the moisture resistance test.

以上のように、実施例1〜8及び比較例3は、接着強度、接続抵抗及び接続外観とも初期特性は良好であり、十分に高い接着性を示すことが確認された。   As described above, it was confirmed that Examples 1 to 8 and Comparative Example 3 had good initial characteristics in terms of adhesive strength, connection resistance, and connection appearance, and exhibited sufficiently high adhesiveness.

また、40℃5日放置後のフィルム状回路接続材料を使用した場合、実施例1〜8及び比較例1、2では、いずれも初期特性と同等の接着性を保持しており、可使時間が長いことが確認された。一方、イソシアネート基含有化合物の配合量が7.5質量部である比較例3は、40℃5日間放置後の接続抵抗が初期接続抵抗の2倍以上に上昇し、可使時間が短いことがわかった。   Moreover, when using the film-like circuit connection material after being left at 40 ° C. for 5 days, in Examples 1 to 8 and Comparative Examples 1 and 2, the adhesive properties equivalent to the initial characteristics are maintained, and the pot life is Was confirmed to be long. On the other hand, in Comparative Example 3 in which the compounding amount of the isocyanate group-containing compound is 7.5 parts by mass, the connection resistance after standing at 40 ° C. for 5 days increases to more than twice the initial connection resistance, and the pot life is short. all right.

以上より、実施例1〜8のフィルム回路状接続材料は、比較例1〜3のフィルム回路状接続材料に比べ、十分に高い接着性を示し、かつ十分に長い可使時間を有することがわかった。このことから、本発明のフィルム状回路接続材料によれば、回路部材の材質によらず十分に高い接着性を示し、かつ、十分に長い可使時間を有することが確認された。   As mentioned above, it turns out that the film circuit-shaped connection material of Examples 1-8 shows sufficiently high adhesiveness compared with the film circuit-shaped connection material of Comparative Examples 1-3, and has a sufficiently long pot life. It was. From this, it was confirmed that the film-like circuit connecting material of the present invention showed sufficiently high adhesiveness regardless of the material of the circuit member and had a sufficiently long pot life.

また、本発明のフィルム状回路接続材料は、十分に長い可使時間を有すると共に、特に回路電極を支持する回路基板がポリエチレンテレフタレート、ポリエーテルスルホン、エポキシ樹脂、アクリル樹脂、ポリイミド樹脂及びガラスから選ばれる少なくとも一種を含む材料からなる回路部材及び回路基板の表面が窒化シリコン、シリコーン樹脂、ポリイミド樹脂及びアクリル樹脂から選ばれる少なくとも一種の材料でコーティング又は付着された回路部材に対して良好な接着性を有することもわかった。   Further, the film-like circuit connecting material of the present invention has a sufficiently long pot life, and in particular, the circuit board supporting the circuit electrode is selected from polyethylene terephthalate, polyethersulfone, epoxy resin, acrylic resin, polyimide resin and glass. Good adhesion to a circuit member made of a material containing at least one kind and a circuit member whose surface is coated or adhered with at least one kind of material selected from silicon nitride, silicone resin, polyimide resin and acrylic resin I also found it.

本発明によれば、回路部材の材質によらず十分に高い接着性を示し、かつ、十分に長い可使時間を有するフィルム状回路接続材料、及びこれらを用いた回路部材の接続構造を提供できる。   According to the present invention, it is possible to provide a film-like circuit connecting material that exhibits sufficiently high adhesiveness regardless of the material of the circuit member and has a sufficiently long pot life, and a circuit member connecting structure using these. .

Claims (8)

第1の回路基板の主面上に第1の回路電極が形成された第1の回路部材と、第2の回路基板の主面上に第2の回路電極が形成された第2の回路部材とを、前記第1及び前記第2の回路電極を対向させた状態で電気的に接続するためのフィルム状回路接続材料であって、
フィルム形成材と、ラジカル重合性化合物と、加熱により遊離ラジカルを発生するラジカル重合開始剤と、イソシアネート基含有化合物とを含有し、
前記イソシアネート基含有化合物の含有割合が、前記フィルム形成材と前記ラジカル重合性化合物との合計100質量部に対して0.09〜5質量部である、フィルム状回路接続材料。
A first circuit member having a first circuit electrode formed on the main surface of the first circuit board, and a second circuit member having a second circuit electrode formed on the main surface of the second circuit board A film-like circuit connecting material for electrically connecting the first and second circuit electrodes in a state of facing each other,
A film-forming material, a radical polymerizable compound, a radical polymerization initiator that generates free radicals upon heating, and an isocyanate group-containing compound,
The film-form circuit connection material whose content rate of the said isocyanate group containing compound is 0.09-5 mass parts with respect to a total of 100 mass parts of the said film formation material and the said radically polymerizable compound.
含フッ素有機化合物を更に含有する、請求項1記載のフィルム状回路接続材料。   The film-like circuit connection material according to claim 1, further comprising a fluorine-containing organic compound. 前記フィルム形成材が、重量平均分子量10000以上のウレタン結合を有する有機化合物を含む、請求項1又は2記載のフィルム状回路接続材料。   The film-form circuit connection material of Claim 1 or 2 in which the said film formation material contains the organic compound which has a urethane bond of the weight average molecular weight 10,000 or more. 導電性粒子を更に含有する、請求項1〜3のいずれか一項に記載のフィルム状回路接続材料。   The film-form circuit connection material as described in any one of Claims 1-3 which further contains electroconductive particle. 第1の回路基板の主面上に第1の回路電極が形成された第1の回路部材と、
第2の回路基板の主面上に第2の回路電極が形成され、前記第2の回路電極が前記第1の回路電極と対向配置されるように配置された第2の回路部材と、
前記第1の回路基板と前記第2の回路基板との間に設けられ、前記第1及び前記第2の回路電極が電気的に接続されるように前記第1の回路部材と前記第2の回路部材とを接続する回路接続部と、
を備えた回路部材の接続構造であって、
前記回路接続部が、請求項1〜4のいずれか一項に記載のフィルム状回路接続材料の硬化物である回路部材の接続構造。
A first circuit member having a first circuit electrode formed on the main surface of the first circuit board;
A second circuit member formed on the main surface of the second circuit board, wherein the second circuit electrode is disposed so that the second circuit electrode is opposed to the first circuit electrode;
The first circuit member and the second circuit board are provided between the first circuit board and the second circuit board so that the first and second circuit electrodes are electrically connected to each other. A circuit connection for connecting the circuit members;
A circuit member connection structure comprising:
The connection structure of the circuit member whose said circuit connection part is the hardened | cured material of the film-form circuit connection material as described in any one of Claims 1-4.
前記第1及び前記第2の回路電極のうち少なくとも一方は、その表面が金、銀、錫、白金族の金属及びインジウム−錫酸化物からなる群より選ばれる少なくとも一種を含む材料からなる、請求項5記載の回路部材の接続構造。   At least one of the first and second circuit electrodes is made of a material containing at least one selected from the group consisting of gold, silver, tin, platinum group metals, and indium-tin oxide. Item 6. A circuit member connection structure according to Item 5. 前記第1及び前記第2の回路基板のうち少なくとも一方は、ポリエチレンテレフタレート、ポリエーテルスルホン、エポキシ樹脂、アクリル樹脂、ポリイミド樹及びガラスからなる群より選ばれる少なくとも一種を含む材料からなる基板である、請求項5又は6記載の回路部材の接続構造。Wherein at least one of the first and the second circuit board is a substrate made of a material containing at least one selected polyethylene terephthalate, polyether sulfone, epoxy resin, acrylic resin, from the group consisting of polyimide resins and glass The connection structure for a circuit member according to claim 5 or 6. 前記第1及び前記第2の回路部材のうち少なくとも一方と前記回路接続部との間に、窒化シリコン、シリコーン樹脂、ポリイミド樹脂及びアクリル樹脂からなる群より選ばれる少なくとも一種の材料を含む層が形成されている、請求項5〜7のいずれか一項に記載の回路部材の接続構造。   A layer containing at least one material selected from the group consisting of silicon nitride, silicone resin, polyimide resin, and acrylic resin is formed between at least one of the first and second circuit members and the circuit connection portion. The circuit member connection structure according to claim 5, wherein the circuit member connection structure is provided.
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Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105176471A (en) * 2010-07-26 2015-12-23 日立化成工业株式会社 Adhesive Composition, Connection Structure, Connection Structure Manufacturing Method And Application Of Adhesive Composition
KR101385422B1 (en) * 2010-07-26 2014-04-14 히타치가세이가부시끼가이샤 Adhesive composition, connection structure, and method for producing connection structure
US9412717B2 (en) * 2011-11-04 2016-08-09 Taiwan Semiconductor Manufacturing Company, Ltd. Apparatus and methods for molded underfills in flip chip packaging
JP6398570B2 (en) * 2013-10-09 2018-10-03 日立化成株式会社 Circuit connection material, circuit member connection structure, and method of manufacturing circuit member connection structure
JP2015098575A (en) * 2013-10-16 2015-05-28 日立化成株式会社 Adhesive composition and connection body
JP6417675B2 (en) * 2014-03-03 2018-11-07 日立化成株式会社 Adhesive composition and connector
WO2016199252A1 (en) * 2015-06-10 2016-12-15 日立化成株式会社 Adhesive composition and connected object
WO2017078087A1 (en) * 2015-11-04 2017-05-11 日立化成株式会社 Adhesive composition and structure
RU2019143583A (en) 2017-05-31 2021-06-24 Дау Глоубл Текнолоджиз Ллк ADHESIVE COMPOSITIONS BASED ON SOLVENT
CN107613675A (en) * 2017-08-10 2018-01-19 维沃移动通信有限公司 A kind of compression method of flexible PCB, surface-mounted integrated circuit and mobile terminal
CN107946677A (en) * 2017-12-15 2018-04-20 安徽中科中涣防务装备技术有限公司 A kind of safe lithium battery core flame retarding construction
DE102018206632A1 (en) * 2018-04-27 2019-10-31 Tesa Se Latent reactive adhesive film
JP2018184607A (en) * 2018-06-27 2018-11-22 日立化成株式会社 Adhesive composition and connection body

Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01103678A (en) * 1987-10-15 1989-04-20 Sunstar Giken Kk Polyurethane adhesive
JPH0790236A (en) * 1993-09-24 1995-04-04 Soken Kagaku Kk Adhesive having anisotropic conductivity
JP2002204052A (en) * 2000-12-28 2002-07-19 Hitachi Chem Co Ltd Circuit connecting material and method for connecting circuit terminal using the same as well as connecting structure
JP2003064331A (en) * 2001-08-30 2003-03-05 Hitachi Chem Co Ltd Thermally cross-linking type circuit-connecting material and method for producing circuit board by using the same
JP2003277694A (en) * 2002-03-27 2003-10-02 Hitachi Chem Co Ltd Adhesive composition for circuit connection and connected circuit structure produced by using the same
JP2003282637A (en) * 2002-03-27 2003-10-03 Hitachi Chem Co Ltd Adhesive composite for circuit connection and circuit connection structure empolying it
WO2005004171A1 (en) * 2003-07-04 2005-01-13 Natoco Co., Ltd. Coated conductive particle, conductive material, anisotropic conductive adhesive and anisotropic conductive junction structure
JP2005347273A (en) * 2005-06-06 2005-12-15 Hitachi Chem Co Ltd Thermally cross-linking type circuit-connecting material and method for producing circuit board by using the same
WO2007046190A1 (en) * 2005-10-18 2007-04-26 Hitachi Chemical Company, Ltd. Adhesive composition, circuit connecting material, connection structure of circuit connectors, and semiconductor devices

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CH674518A5 (en) * 1987-09-09 1990-06-15 Inventa Ag
JP2005255706A (en) * 2004-03-09 2005-09-22 Lintec Corp Hardenable pressure-sensitive adhesive composition, sheet for manufacturing optical disc and optical disc

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01103678A (en) * 1987-10-15 1989-04-20 Sunstar Giken Kk Polyurethane adhesive
JPH0790236A (en) * 1993-09-24 1995-04-04 Soken Kagaku Kk Adhesive having anisotropic conductivity
JP2002204052A (en) * 2000-12-28 2002-07-19 Hitachi Chem Co Ltd Circuit connecting material and method for connecting circuit terminal using the same as well as connecting structure
JP2003064331A (en) * 2001-08-30 2003-03-05 Hitachi Chem Co Ltd Thermally cross-linking type circuit-connecting material and method for producing circuit board by using the same
JP2003277694A (en) * 2002-03-27 2003-10-02 Hitachi Chem Co Ltd Adhesive composition for circuit connection and connected circuit structure produced by using the same
JP2003282637A (en) * 2002-03-27 2003-10-03 Hitachi Chem Co Ltd Adhesive composite for circuit connection and circuit connection structure empolying it
WO2005004171A1 (en) * 2003-07-04 2005-01-13 Natoco Co., Ltd. Coated conductive particle, conductive material, anisotropic conductive adhesive and anisotropic conductive junction structure
JP2005347273A (en) * 2005-06-06 2005-12-15 Hitachi Chem Co Ltd Thermally cross-linking type circuit-connecting material and method for producing circuit board by using the same
WO2007046190A1 (en) * 2005-10-18 2007-04-26 Hitachi Chemical Company, Ltd. Adhesive composition, circuit connecting material, connection structure of circuit connectors, and semiconductor devices

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CN102199404B (en) 2013-12-04
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CN101675715A (en) 2010-03-17
TWI378745B (en) 2012-12-01
KR101100507B1 (en) 2011-12-29
CN102199404A (en) 2011-09-28
TW201130940A (en) 2011-09-16
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JP4941554B2 (en) 2012-05-30
WO2008139996A1 (en) 2008-11-20

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