CN101971376B - 半导体装置 - Google Patents

半导体装置 Download PDF

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Publication number
CN101971376B
CN101971376B CN200980109077XA CN200980109077A CN101971376B CN 101971376 B CN101971376 B CN 101971376B CN 200980109077X A CN200980109077X A CN 200980109077XA CN 200980109077 A CN200980109077 A CN 200980109077A CN 101971376 B CN101971376 B CN 101971376B
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chip
semiconductor
semiconductor chip
semiconductor device
downside
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CN200980109077XA
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English (en)
Chinese (zh)
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CN101971376A (zh
Inventor
托马斯·蔡勒
赖纳·温迪施
斯特凡·格鲁贝尔
马库斯·基尔施
朱利叶斯·穆沙韦克
托尔斯滕·巴德
赫贝特·布伦纳
斯特芬·科勒
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Ams Osram International GmbH
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Osram Opto Semiconductors GmbH
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Publication of CN101971376A publication Critical patent/CN101971376A/zh
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F19/00—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/852—Encapsulations
    • H10H20/853—Encapsulations characterised by their shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/855—Optical field-shaping means, e.g. lenses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/855—Optical field-shaping means, e.g. lenses
    • H10H20/856—Reflecting means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations

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CN200980109077XA 2008-05-29 2009-04-20 半导体装置 Active CN101971376B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE102008025756.7A DE102008025756B4 (de) 2008-05-29 2008-05-29 Halbleiteranordnung
DE102008025756.7 2008-05-29
PCT/DE2009/000542 WO2009143795A1 (de) 2008-05-29 2009-04-20 Halbleiteranordnung

Publications (2)

Publication Number Publication Date
CN101971376A CN101971376A (zh) 2011-02-09
CN101971376B true CN101971376B (zh) 2013-01-02

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
CN200980109077XA Active CN101971376B (zh) 2008-05-29 2009-04-20 半导体装置

Country Status (7)

Country Link
US (1) US8461616B2 (enExample)
EP (1) EP2281315B1 (enExample)
JP (1) JP2011521480A (enExample)
KR (1) KR101634406B1 (enExample)
CN (1) CN101971376B (enExample)
DE (1) DE102008025756B4 (enExample)
WO (1) WO2009143795A1 (enExample)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9142740B2 (en) 2003-07-04 2015-09-22 Epistar Corporation Optoelectronic element and manufacturing method thereof
US9000461B2 (en) * 2003-07-04 2015-04-07 Epistar Corporation Optoelectronic element and manufacturing method thereof
US10686106B2 (en) 2003-07-04 2020-06-16 Epistar Corporation Optoelectronic element
DE102009017946A1 (de) * 2009-04-17 2010-10-21 Osram Opto Semiconductors Gmbh Linse, optoelektronisches Bauelement aufweisend eine Linse und Verfahren zur Herstellung einer Linse
DE102009024425B4 (de) * 2009-06-09 2011-11-17 Diehl Aerospace Gmbh Anschlusseinrichtung für eine lichtemittierende Diode und Beleuchtungseinheit
DE102010055265A1 (de) 2010-12-20 2012-06-21 Osram Opto Semiconductors Gmbh Optoelektronisches Halbleiterbauteil
CN102651446B (zh) * 2011-02-25 2014-12-10 展晶科技(深圳)有限公司 发光二极管封装结构及光源装置
DE102011102350A1 (de) * 2011-05-24 2012-11-29 Osram Opto Semiconductors Gmbh Optisches Element, optoelektronisches Bauelement und Verfahren zur Herstellung dieser
DE102011102590A1 (de) * 2011-05-27 2012-11-29 Osram Opto Semiconductors Gmbh Verfahren zum Herstellen von Leuchtdioden-Bauelementen
WO2013108143A1 (en) * 2012-01-17 2013-07-25 Koninklijke Philips N.V. Semiconductor light emitting device lamp that emits light at large angles
DE102012102114B4 (de) * 2012-03-13 2021-09-16 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Strahlungsemittierendes Halbleiterbauteil, Beleuchtungsvorrichtung und Anzeigevorrichtung
DE102012102122A1 (de) * 2012-03-13 2013-09-19 Osram Opto Semiconductors Gmbh Flächenlichtquelle
US8889439B2 (en) * 2012-08-24 2014-11-18 Tsmc Solid State Lighting Ltd. Method and apparatus for packaging phosphor-coated LEDs
WO2015011586A1 (en) * 2013-07-26 2015-01-29 Koninklijke Philips N.V. Led dome with inner high index pillar
EP2854186A1 (en) * 2013-09-26 2015-04-01 Seoul Semiconductor Co., Ltd. Light source module, fabrication method therefor, and backlight unit including the same
KR102217791B1 (ko) 2014-01-23 2021-02-22 루미리즈 홀딩 비.브이. 자기-정렬되는 미리 형성된 렌즈를 갖는 발광 디바이스
JP2015165536A (ja) * 2014-03-03 2015-09-17 ウシオ電機株式会社 発光装置および発光モジュール
DE102014217986A1 (de) * 2014-03-27 2015-10-01 Tridonic Jennersdorf Gmbh LED Modul mit integrierter Sekundäroptik
EP3365925B1 (en) 2015-10-19 2021-04-14 Lumileds LLC Wavelength converted light emitting device with textured substrate
CN109148674B (zh) 2017-06-28 2023-05-16 日亚化学工业株式会社 发光装置
JP6899412B2 (ja) * 2018-07-27 2021-07-07 住友化学株式会社 Ｌｅｄデバイスの製造方法
US20230042041A1 (en) * 2020-01-13 2023-02-09 Osram Opto Semiconductors Gmbh Housing, optoelectronic semiconductor component and production method

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW569469B (en) * 2001-06-12 2004-01-01 Lumileds Lighting Llc Light emitting diodes with improved light extraction efficiency
TW200620718A (en) * 2004-11-12 2006-06-16 Lumileds Lighting Llc Bonding an optical element to a light emitting device
CN1922740A (zh) * 2004-01-07 2007-02-28 松下电器产业株式会社 Led照明光源

Family Cites Families (35)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5216805A (en) * 1990-12-12 1993-06-08 Eastman Kodak Company Method of manufacturing an optoelectronic device package
DE19638667C2 (de) * 1996-09-20 2001-05-17 Osram Opto Semiconductors Gmbh Mischfarbiges Licht abstrahlendes Halbleiterbauelement mit Lumineszenzkonversionselement
DE19625622A1 (de) * 1996-06-26 1998-01-02 Siemens Ag Lichtabstrahlendes Halbleiterbauelement mit Lumineszenzkonversionselement
EP2282354B1 (de) * 1996-06-26 2013-09-11 OSRAM Opto Semiconductors GmbH Licht abstrahlendes Halbleiterbauelement mit Lumineszenzkonversionselement
JP3696021B2 (ja) * 2000-01-20 2005-09-14 三洋電機株式会社 光照射装置
DE10023353A1 (de) * 2000-05-12 2001-11-29 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement und Verfahren zur Herstellung
US6345903B1 (en) * 2000-09-01 2002-02-12 Citizen Electronics Co., Ltd. Surface-mount type emitting diode and method of manufacturing same
US7053419B1 (en) 2000-09-12 2006-05-30 Lumileds Lighting U.S., Llc Light emitting diodes with improved light extraction efficiency
TW474034B (en) * 2000-11-07 2002-01-21 United Epitaxy Co Ltd LED and the manufacturing method thereof
EP1419530B1 (de) * 2001-08-24 2007-08-08 Schott Ag Verfahren zur herstellung von elektronischen bauelementen
EP1419534A2 (de) * 2001-08-24 2004-05-19 Schott Glas Verfahren zum kontaktieren und gehäusen von integrierten schaltungen
EP1536487A4 (en) * 2002-05-28 2008-02-06 Matsushita Electric Works Ltd ELECTROLUMINESCENT ELEMENT, LIGHT EMITTING DEVICE AND SURFACE EMISSION LIGHTING DEVICE USING THE SAME
JP2004128057A (ja) * 2002-09-30 2004-04-22 Fuji Photo Film Co Ltd 発光装置およびその製造方法
EP1597777B1 (en) * 2003-02-26 2013-04-24 Cree, Inc. Composite white light source and method for fabricating
JP4182784B2 (ja) * 2003-03-14 2008-11-19 豊田合成株式会社 発光装置およびその製造方法
US7061065B2 (en) * 2003-03-31 2006-06-13 National Chung-Hsing University Light emitting diode and method for producing the same
US7361938B2 (en) 2004-06-03 2008-04-22 Philips Lumileds Lighting Company Llc Luminescent ceramic for a light emitting device
US20050280016A1 (en) 2004-06-17 2005-12-22 Mok Thye L PCB-based surface mount LED device with silicone-based encapsulation structure
DE102004036157B4 (de) 2004-07-26 2023-03-16 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Elektromagnetische Strahlung emittierendes optoelektronisches Bauelement und Leuchtmodul
DE102004047640A1 (de) 2004-09-30 2006-04-13 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement und Gehäuse für ein optoelektronisches Bauelement
WO2006114745A2 (en) * 2005-04-28 2006-11-02 Koninklijke Philips Electronics N.V. Light source comprising led arranged in recess
DE102006037737A1 (de) 2005-12-09 2007-06-14 Osram Opto Semiconductors Gmbh Optische Vorrichtung, optoelektronische Vorrichtung und Verfahren zur Herstellung einer optoelektronischen Vorrichtung
TW200735327A (en) * 2005-12-14 2007-09-16 Koninkl Philips Electronics Nv Collimation arrangement and illumination system and display device using the same
US7375379B2 (en) * 2005-12-19 2008-05-20 Philips Limileds Lighting Company, Llc Light-emitting device
US7798678B2 (en) * 2005-12-30 2010-09-21 3M Innovative Properties Company LED with compound encapsulant lens
TWI303105B (en) * 2006-01-11 2008-11-11 Advanced Semiconductor Eng Wafer level package for image sensor components and its fabricating method
JP2007242820A (ja) * 2006-03-08 2007-09-20 Asahi Kasei Corp 発光デバイス及び発光デバイスモジュール
US7674641B2 (en) * 2006-04-12 2010-03-09 Atomic Energy Council Method for fabricating white-light-emitting flip-chip diode having silicon quantum dots
US7521862B2 (en) 2006-11-20 2009-04-21 Philips Lumileds Lighting Co., Llc Light emitting device including luminescent ceramic and light-scattering material
US7964888B2 (en) * 2007-04-18 2011-06-21 Cree, Inc. Semiconductor light emitting device packages and methods
DE102007019776A1 (de) 2007-04-26 2008-10-30 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement und Verfahren zur Herstellung einer Mehrzahl optoelektronischer Bauelemente
DE102007019775B4 (de) 2007-04-26 2024-11-28 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronisches Bauelement
US7999283B2 (en) * 2007-06-14 2011-08-16 Cree, Inc. Encapsulant with scatterer to tailor spatial emission pattern and color uniformity in light emitting diodes
KR101378418B1 (ko) * 2007-11-01 2014-03-27 삼성전자주식회사 이미지센서 모듈 및 그 제조방법
JP2010161321A (ja) * 2009-01-09 2010-07-22 Panasonic Corp 光学デバイスおよびその製造方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW569469B (en) * 2001-06-12 2004-01-01 Lumileds Lighting Llc Light emitting diodes with improved light extraction efficiency
CN1922740A (zh) * 2004-01-07 2007-02-28 松下电器产业株式会社 Led照明光源
TW200620718A (en) * 2004-11-12 2006-06-16 Lumileds Lighting Llc Bonding an optical element to a light emitting device

Also Published As

Publication number Publication date
KR101634406B1 (ko) 2016-06-28
CN101971376A (zh) 2011-02-09
US20110266571A1 (en) 2011-11-03
DE102008025756A1 (de) 2009-12-03
KR20110030417A (ko) 2011-03-23
DE102008025756B4 (de) 2023-02-23
EP2281315A1 (de) 2011-02-09
EP2281315B1 (de) 2018-10-17
JP2011521480A (ja) 2011-07-21
WO2009143795A1 (de) 2009-12-03
US8461616B2 (en) 2013-06-11

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