CN101971341B - 晶片堆叠、集成电路器件及其制造方法 - Google Patents

晶片堆叠、集成电路器件及其制造方法 Download PDF

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Publication number
CN101971341B
CN101971341B CN2008801270814A CN200880127081A CN101971341B CN 101971341 B CN101971341 B CN 101971341B CN 2008801270814 A CN2008801270814 A CN 2008801270814A CN 200880127081 A CN200880127081 A CN 200880127081A CN 101971341 B CN101971341 B CN 101971341B
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China
Prior art keywords
wafer
shadow shield
integrated optical
stacking
optical device
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CN2008801270814A
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Chinese (zh)
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CN101971341A (zh
Inventor
M·罗西
H·鲁德曼
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Juguang Singapore Ltd
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Heptagon Oy
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8053—Colour filters
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/024—Manufacture or treatment of image sensors covered by group H10F39/12 of coatings or optical elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/30—Coatings
    • H10F77/306—Coatings for devices having potential barriers
    • H10F77/331—Coatings for devices having potential barriers for filtering or shielding light, e.g. multicolour filters for photodetectors
    • H10F77/334—Coatings for devices having potential barriers for filtering or shielding light, e.g. multicolour filters for photodetectors for shielding light, e.g. light blocking layers or cold shields for infrared detectors
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49826—Assembling or joining

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  • Studio Devices (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Lens Barrels (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
CN2008801270814A 2007-12-19 2008-12-16 晶片堆叠、集成电路器件及其制造方法 Active CN101971341B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US1480807P 2007-12-19 2007-12-19
US61/014808 2007-12-19
PCT/CH2008/000532 WO2009076788A1 (en) 2007-12-19 2008-12-16 Wafer stack, integrated optical device and method for fabricating the same

Publications (2)

Publication Number Publication Date
CN101971341A CN101971341A (zh) 2011-02-09
CN101971341B true CN101971341B (zh) 2012-10-03

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CN2008801270814A Active CN101971341B (zh) 2007-12-19 2008-12-16 晶片堆叠、集成电路器件及其制造方法

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US (1) US8289635B2 (cg-RX-API-DMAC7.html)
EP (1) EP2223338A1 (cg-RX-API-DMAC7.html)
JP (1) JP2011507284A (cg-RX-API-DMAC7.html)
KR (1) KR20100106480A (cg-RX-API-DMAC7.html)
CN (1) CN101971341B (cg-RX-API-DMAC7.html)
TW (1) TW200937642A (cg-RX-API-DMAC7.html)
WO (1) WO2009076788A1 (cg-RX-API-DMAC7.html)

Families Citing this family (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101872033B (zh) * 2009-04-24 2014-04-30 鸿富锦精密工业（深圳）有限公司 遮光片阵列、遮光片阵列制造方法及镜头模组阵列
CN102045494A (zh) * 2009-10-22 2011-05-04 国碁电子(中山)有限公司 相机模组及其制作方法
SG186210A1 (en) 2010-06-14 2013-01-30 Heptagon Micro Optics Pte Ltd Camera, and method of manufacturing a plurality of cameras
KR20130093072A (ko) * 2010-06-14 2013-08-21 헵타곤 마이크로 옵틱스 피티이. 리미티드 복수의 광학 장치를 제조하는 방법
JPWO2012173252A1 (ja) * 2011-06-17 2015-02-23 コニカミノルタ株式会社 ウェハーレンズの製造方法及びウェハーレンズ、並びにレンズユニットの製造方法及びレンズユニット
CN103512595B (zh) * 2011-07-19 2016-08-10 赫普塔冈微光有限公司 光电模块及其制造方法与包含光电模块的电器及装置
CN103959125A (zh) * 2011-10-05 2014-07-30 新加坡恒立私人有限公司 微光学系统及其制造方法
TWI567953B (zh) 2011-12-20 2017-01-21 新加坡恒立私人有限公司 光電模組及包含該模組之裝置
WO2013091829A1 (en) * 2011-12-22 2013-06-27 Heptagon Micro Optics Pte. Ltd. Opto-electronic modules, in particular flash modules, and method for manufacturing the same
SG10201701879RA (en) * 2012-05-17 2017-04-27 Heptagon Micro Optics Pte Ltd Assembly of wafer stacks
SG10201610943TA (en) * 2012-07-03 2017-02-27 Heptagon Micro Optics Pte Ltd Use of vacuum chucks to hold a wafer or wafer sub-stack
US8606057B1 (en) 2012-11-02 2013-12-10 Heptagon Micro Optics Pte. Ltd. Opto-electronic modules including electrically conductive connections for integration with an electronic device
SG11201504456YA (en) * 2012-12-27 2015-07-30 Heptagon Micro Optics Pte Ltd Fabrication of optical elements and modules incorporating the same
WO2014109711A1 (en) * 2013-01-10 2014-07-17 Heptagon Micro Optics Pte. Ltd. Opto-electronic modules including features to help reduce stray light and/or optical cross-talk
JP2014186006A (ja) * 2013-03-25 2014-10-02 Toshiba Corp 赤外線撮像装置および赤外線撮像モジュール
US9923008B2 (en) * 2013-04-12 2018-03-20 Omnivision Technologies, Inc. Wafer-level array cameras and methods for fabricating the same
US9543354B2 (en) * 2013-07-30 2017-01-10 Heptagon Micro Optics Pte. Ltd. Optoelectronic modules that have shielding to reduce light leakage or stray light, and fabrication methods for such modules
US9746349B2 (en) * 2013-09-02 2017-08-29 Heptagon Micro Optics Pte. Ltd. Opto-electronic module including a non-transparent separation member between a light emitting element and a light detecting element
WO2015038064A2 (en) * 2013-09-10 2015-03-19 Heptagon Micro Optics Pte. Ltd. Compact opto-electronic modules and fabrication methods for such modules
US9880391B2 (en) * 2013-10-01 2018-01-30 Heptagon Micro Optics Pte. Ltd. Lens array modules and wafer-level techniques for fabricating the same
EP3080840B1 (en) * 2013-12-09 2019-05-22 Heptagon Micro Optics Pte. Ltd. Modules having multiple optical channels including optical elements at different heights above the optoelectronic devices
US9121994B2 (en) * 2013-12-17 2015-09-01 Anteryon Wafer Optics B.V. Method of fabricating a wafer level optical lens assembly
US9176261B2 (en) * 2014-02-17 2015-11-03 Genius Electronic Optical Co., Ltd. Optical lens assembly, array type lens module and method of making the array type lens module
US9711552B2 (en) * 2014-08-19 2017-07-18 Heptagon Micro Optics Pte. Ltd. Optoelectronic modules having a silicon substrate, and fabrication methods for such modules
EP3660902A1 (en) 2014-11-19 2020-06-03 Ams Ag Semiconductor device comprising an aperture array
US10455131B2 (en) 2015-01-26 2019-10-22 Omnivision Technologies, Inc. Wafer-level methods for packing camera modules, and associated camera modules
US10437025B2 (en) * 2015-01-26 2019-10-08 Omnivision Technologies, Inc. Wafer-level lens packaging methods, and associated lens assemblies and camera modules
TWI677991B (zh) * 2015-11-04 2019-11-21 美商豪威科技股份有限公司 用於封裝相機模組的晶圓級方法及相關的相機模組
CN109155258B (zh) * 2016-04-08 2022-04-26 赫普塔冈微光有限公司 具有孔径的薄光电模块及其制造
JP2018109716A (ja) * 2017-01-05 2018-07-12 ソニーセミコンダクタソリューションズ株式会社 レンズモジュールおよびレンズモジュールの製造方法、撮像装置、並びに電子機器
US10734184B1 (en) 2019-06-21 2020-08-04 Elbit Systems Of America, Llc Wafer scale image intensifier

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE20100418U1 (de) * 2000-01-15 2001-04-26 Agilent Technologies, Inc., Palo Alto, Calif. Photodetektor
CN1510496A (zh) * 2002-12-18 2004-07-07 ������������ʽ���� 摄影模块及其制造方法
CN1875617A (zh) * 2003-10-27 2006-12-06 皇家飞利浦电子股份有限公司 相机模块以及该相机模块的制造方法

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58141562A (ja) 1982-02-17 1983-08-22 Fujitsu Ltd 冷却型光電変換装置の製造方法
JPH1065132A (ja) * 1996-08-14 1998-03-06 Sony Corp 半導体撮像装置
US6324010B1 (en) * 1999-07-19 2001-11-27 Eastman Kodak Company Optical assembly and a method for manufacturing lens systems
JP3887162B2 (ja) * 2000-10-19 2007-02-28 富士通株式会社 撮像用半導体装置
US6635941B2 (en) 2001-03-21 2003-10-21 Canon Kabushiki Kaisha Structure of semiconductor device with improved reliability
JP2002368235A (ja) * 2001-03-21 2002-12-20 Canon Inc 半導体装置及びその製造方法
JP4030047B2 (ja) * 2002-03-28 2008-01-09 シチズン電子株式会社 小型撮像モジュール
JP2004029554A (ja) * 2002-06-27 2004-01-29 Olympus Corp 撮像レンズユニットおよび撮像装置
JP3981348B2 (ja) * 2003-05-30 2007-09-26 松下電器産業株式会社 撮像装置およびその製造方法
JP4499385B2 (ja) 2003-07-29 2010-07-07 浜松ホトニクス株式会社 裏面入射型光検出素子及び裏面入射型光検出素子の製造方法
JP4797151B2 (ja) * 2004-01-26 2011-10-19 テッセラ・ノース・アメリカ・インコーポレイテッド サブピクセル解像度を有する薄型カメラ
JP2005227500A (ja) * 2004-02-12 2005-08-25 Fujinon Corp 撮像装置
WO2008011003A2 (en) * 2006-07-17 2008-01-24 Tessera North America, Inc. Camera system and associated methods
JP2007129164A (ja) * 2005-11-07 2007-05-24 Sharp Corp 光学装置用モジュール、光学装置用モジュールの製造方法、及び、構造体
JP2011180293A (ja) * 2010-02-26 2011-09-15 Fujifilm Corp レンズアレイ

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE20100418U1 (de) * 2000-01-15 2001-04-26 Agilent Technologies, Inc., Palo Alto, Calif. Photodetektor
CN1510496A (zh) * 2002-12-18 2004-07-07 ������������ʽ���� 摄影模块及其制造方法
CN1875617A (zh) * 2003-10-27 2006-12-06 皇家飞利浦电子股份有限公司 相机模块以及该相机模块的制造方法

Also Published As

Publication number Publication date
JP2011507284A (ja) 2011-03-03
US8289635B2 (en) 2012-10-16
WO2009076788A1 (en) 2009-06-25
US20110013292A1 (en) 2011-01-20
CN101971341A (zh) 2011-02-09
KR20100106480A (ko) 2010-10-01
EP2223338A1 (en) 2010-09-01
TW200937642A (en) 2009-09-01

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