CN101970352A - 用于电介质层上的无电镀覆的活化溶液 - Google Patents

用于电介质层上的无电镀覆的活化溶液 Download PDF

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CN101970352A
CN101970352A CN2008801273884A CN200880127388A CN101970352A CN 101970352 A CN101970352 A CN 101970352A CN 2008801273884 A CN2008801273884 A CN 2008801273884A CN 200880127388 A CN200880127388 A CN 200880127388A CN 101970352 A CN101970352 A CN 101970352A
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oxidized surface
solution
catalyzer
group
chemical bond
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Chinese (zh)
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阿尔图尔·科利奇
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Lam Research Corp
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Lam Research Corp
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J31/00—Catalysts comprising hydrides, coordination complexes or organic compounds
    • B01J31/16—Catalysts comprising hydrides, coordination complexes or organic compounds containing coordination complexes
    • B01J31/1616—Coordination complexes, e.g. organometallic complexes, immobilised on an inorganic support, e.g. ship-in-a-bottle type catalysts
    • B01J31/1625—Coordination complexes, e.g. organometallic complexes, immobilised on an inorganic support, e.g. ship-in-a-bottle type catalysts immobilised by covalent linkages, i.e. pendant complexes with optional linking groups
    • B01J31/1633—Coordination complexes, e.g. organometallic complexes, immobilised on an inorganic support, e.g. ship-in-a-bottle type catalysts immobilised by covalent linkages, i.e. pendant complexes with optional linking groups covalent linkages via silicon containing groups
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/18—Pretreatment of the material to be coated
    • C23C18/1851—Pretreatment of the material to be coated of surfaces of non-metallic or semiconducting in organic material
    • C23C18/1872—Pretreatment of the material to be coated of surfaces of non-metallic or semiconducting in organic material by chemical pretreatment
    • C23C18/1875—Pretreatment of the material to be coated of surfaces of non-metallic or semiconducting in organic material by chemical pretreatment only one step pretreatment
    • C23C18/1879—Use of metal, e.g. activation, sensitisation with noble metals
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/18—Pretreatment of the material to be coated
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J31/00—Catalysts comprising hydrides, coordination complexes or organic compounds
    • B01J31/16—Catalysts comprising hydrides, coordination complexes or organic compounds containing coordination complexes
    • B01J31/18—Catalysts comprising hydrides, coordination complexes or organic compounds containing coordination complexes containing nitrogen, phosphorus, arsenic or antimony as complexing atoms, e.g. in pyridine ligands, or in resonance therewith, e.g. in isocyanide ligands C=N-R or as complexed central atoms
    • B01J31/1805—Catalysts comprising hydrides, coordination complexes or organic compounds containing coordination complexes containing nitrogen, phosphorus, arsenic or antimony as complexing atoms, e.g. in pyridine ligands, or in resonance therewith, e.g. in isocyanide ligands C=N-R or as complexed central atoms the ligands containing nitrogen
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J31/00—Catalysts comprising hydrides, coordination complexes or organic compounds
    • B01J31/26—Catalysts comprising hydrides, coordination complexes or organic compounds containing in addition, inorganic metal compounds not provided for in groups B01J31/02 - B01J31/24
    • B01J31/28—Catalysts comprising hydrides, coordination complexes or organic compounds containing in addition, inorganic metal compounds not provided for in groups B01J31/02 - B01J31/24 of the platinum group metals, iron group metals or copper
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/113—Silicon oxides; Hydrates thereof
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/18—Pretreatment of the material to be coated
    • C23C18/1851—Pretreatment of the material to be coated of surfaces of non-metallic or semiconducting in organic material
    • C23C18/1872—Pretreatment of the material to be coated of surfaces of non-metallic or semiconducting in organic material by chemical pretreatment
    • C23C18/1875—Pretreatment of the material to be coated of surfaces of non-metallic or semiconducting in organic material by chemical pretreatment only one step pretreatment
    • C23C18/1882—Use of organic or inorganic compounds other than metals, e.g. activation, sensitisation with polymers
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/18—Pretreatment of the material to be coated
    • C23C18/1851—Pretreatment of the material to be coated of surfaces of non-metallic or semiconducting in organic material
    • C23C18/1872—Pretreatment of the material to be coated of surfaces of non-metallic or semiconducting in organic material by chemical pretreatment
    • C23C18/1886—Multistep pretreatment
    • C23C18/1889—Multistep pretreatment with use of metal first
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/31—Coating with metals
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/46—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials using a liquid
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/032—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers
    • H10W20/042—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers the barrier, adhesion or liner layers being seed or nucleation layers
    • H10W20/044—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers the barrier, adhesion or liner layers being seed or nucleation layers for electroless plating
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J2231/00—Catalytic reactions performed with catalysts classified in B01J31/00
    • B01J2231/60—Reduction reactions, e.g. hydrogenation
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J2231/00—Catalytic reactions performed with catalysts classified in B01J31/00
    • B01J2231/60—Reduction reactions, e.g. hydrogenation
    • B01J2231/62—Reductions in general of inorganic substrates, e.g. formal hydrogenation, e.g. of N2
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J2531/00—Additional information regarding catalytic systems classified in B01J31/00
    • B01J2531/80—Complexes comprising metals of Group VIII as the central metal
    • B01J2531/82—Metals of the platinum group
    • B01J2531/824—Palladium

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Inorganic Chemistry (AREA)
  • Chemically Coating (AREA)
  • Catalysts (AREA)
CN2008801273884A 2007-12-21 2008-12-20 用于电介质层上的无电镀覆的活化溶液 Pending CN101970352A (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201610006183.7A CN105671524B (zh) 2007-12-21 2008-12-20 用于电介质层上的无电镀覆的活化溶液

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US1643907P 2007-12-21 2007-12-21
US61/016,439 2007-12-21
US12/334,460 2008-12-13
US12/334,460 US20090162681A1 (en) 2007-12-21 2008-12-13 Activation solution for electroless plating on dielectric layers
PCT/US2008/087877 WO2009086230A2 (en) 2007-12-21 2008-12-20 Activation solution for electroless plating on dielectric layers

Related Child Applications (1)

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CN201610006183.7A Division CN105671524B (zh) 2007-12-21 2008-12-20 用于电介质层上的无电镀覆的活化溶液

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CN101970352A true CN101970352A (zh) 2011-02-09

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CN2008801273884A Pending CN101970352A (zh) 2007-12-21 2008-12-20 用于电介质层上的无电镀覆的活化溶液
CN201610006183.7A Active CN105671524B (zh) 2007-12-21 2008-12-20 用于电介质层上的无电镀覆的活化溶液

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US (1) US20090162681A1 (enExample)
JP (1) JP5982092B2 (enExample)
KR (1) KR20100105722A (enExample)
CN (2) CN101970352A (enExample)
TW (1) TWI494164B (enExample)
WO (1) WO2009086230A2 (enExample)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109692707A (zh) * 2017-10-23 2019-04-30 卫子健 自吸附催化剂组成物及其制造方法、及无电镀基板的制造方法
CN110310919A (zh) * 2013-12-27 2019-10-08 朗姆研究公司 实现低电阻率钨特征填充的钨成核工艺
US11865518B2 (en) 2017-10-20 2024-01-09 National Tsing Hua University Method for manufacturing electroless plating substrate and method for forming metal layer on surface of substrate
US11972952B2 (en) 2018-12-14 2024-04-30 Lam Research Corporation Atomic layer deposition on 3D NAND structures
US12002679B2 (en) 2019-04-11 2024-06-04 Lam Research Corporation High step coverage tungsten deposition
US12077858B2 (en) 2019-08-12 2024-09-03 Lam Research Corporation Tungsten deposition
US12237221B2 (en) 2019-05-22 2025-02-25 Lam Research Corporation Nucleation-free tungsten deposition

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2950633B1 (fr) 2009-09-30 2011-11-25 Alchimer Solution et procede d'activation de la surface oxydee d'un substrat semi-conducteur.
US8895441B2 (en) * 2012-02-24 2014-11-25 Lam Research Corporation Methods and materials for anchoring gapfill metals
JP2019057572A (ja) 2017-09-20 2019-04-11 東芝メモリ株式会社 金属配線の形成方法
CN108486552B (zh) * 2018-05-14 2020-07-17 合肥学院 一种聚合物基材表面高品质化学镀层的制备方法
CN116081627B (zh) * 2023-02-15 2024-06-25 盐城工学院 一种多孔SiOx@C复合材料的原位液相制备方法

Family Cites Families (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53107274A (en) * 1977-03-02 1978-09-19 Hitachi Ltd Forming method of patterns
US4313761A (en) * 1979-10-25 1982-02-02 Monsanto Company Reaction products of metal oxides and salts with phosphorus compounds
US4548644A (en) * 1982-09-28 1985-10-22 Hitachi Chemical Company, Ltd. Electroless copper deposition solution
US5405656A (en) * 1990-04-02 1995-04-11 Nippondenso Co., Ltd. Solution for catalytic treatment, method of applying catalyst to substrate and method of forming electrical conductor
JPH0629246A (ja) * 1991-02-04 1994-02-04 Internatl Business Mach Corp <Ibm> 選択的な無電解メッキの方法
US5250490A (en) * 1991-12-24 1993-10-05 Union Carbide Chemicals & Plastics Technology Corporation Noble metal supported on a base metal catalyst
JPH06330332A (ja) * 1993-05-17 1994-11-29 Ibiden Co Ltd 無電解めっき方法
WO1996020294A1 (en) * 1994-12-27 1996-07-04 Ibiden Co., Ltd. Pretreatment solution for electroless plating, electroless plating bath and electroless plating method
JP2001081412A (ja) * 1999-09-17 2001-03-27 Nippon Parkerizing Co Ltd ＮＯｘ浄化用光触媒塗料およびその塗膜の形成方法
GB0025989D0 (en) * 2000-10-24 2000-12-13 Shipley Co Llc Plating catalysts
JP3758532B2 (ja) * 2001-06-28 2006-03-22 株式会社日鉱マテリアルズ 銅あるいは銅合金上への無電解ニッケルめっき用前処理液及び無電解ニッケルめっき方法
WO2003091476A1 (en) * 2002-04-23 2003-11-06 Nikko Materials Co., Ltd. Method of electroless plating and semiconductor wafer having metal plating layer formed thereon
US6872659B2 (en) * 2002-08-19 2005-03-29 Micron Technology, Inc. Activation of oxides for electroless plating
US6911067B2 (en) * 2003-01-10 2005-06-28 Blue29, Llc Solution composition and method for electroless deposition of coatings free of alkali metals
US7306662B2 (en) * 2006-05-11 2007-12-11 Lam Research Corporation Plating solution for electroless deposition of copper
US6902605B2 (en) * 2003-03-06 2005-06-07 Blue29, Llc Activation-free electroless solution for deposition of cobalt and method for deposition of cobalt capping/passivation layer on copper
US6794288B1 (en) * 2003-05-05 2004-09-21 Blue29 Corporation Method for electroless deposition of phosphorus-containing metal films onto copper with palladium-free activation
JP5095909B2 (ja) * 2003-06-24 2012-12-12 ローム・アンド・ハース・エレクトロニック・マテリアルズ，エル．エル．シー． 触媒組成物および析出方法
US7205233B2 (en) * 2003-11-07 2007-04-17 Applied Materials, Inc. Method for forming CoWRe alloys by electroless deposition
JP2005213576A (ja) * 2004-01-29 2005-08-11 Nikko Materials Co Ltd 無電解めっき前処理剤、それを用いる無電解めっき方法、及び無電解めっき物
JP4479572B2 (ja) * 2005-04-08 2010-06-09 富士電機デバイステクノロジー株式会社 垂直磁気記録媒体用ディスク基板の製造方法、垂直磁気記録媒体用ディスク基板及び垂直磁気記録媒体
US20060210837A1 (en) * 2004-04-16 2006-09-21 Fuji Electric Device Method of plating on a glass base plate, a method of manufacturing a disk substrate for a perpendicular magnetic recording medium, a disk substrate for a perpendicular magnetic recording medium, and a perpendicular magnetic recording medium
JP2006052440A (ja) * 2004-08-11 2006-02-23 Hyogo Prefecture 無電解めっき用触媒液及び無電解めっき皮膜の形成方法
US7365011B2 (en) * 2005-11-07 2008-04-29 Intel Corporation Catalytic nucleation monolayer for metal seed layers
KR20070059616A (ko) * 2005-12-07 2007-06-12 재단법인서울대학교산학협력재단 첨가제를 이용한 초등각 구리 무전해 도금 방법
JP2007203442A (ja) * 2006-02-06 2007-08-16 Univ Kanagawa 金属被覆砥粒，金属被覆砥粒の製造方法，およびその金属被覆砥粒を使用した砥石

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110310919A (zh) * 2013-12-27 2019-10-08 朗姆研究公司 实现低电阻率钨特征填充的钨成核工艺
US11865518B2 (en) 2017-10-20 2024-01-09 National Tsing Hua University Method for manufacturing electroless plating substrate and method for forming metal layer on surface of substrate
CN109692707A (zh) * 2017-10-23 2019-04-30 卫子健 自吸附催化剂组成物及其制造方法、及无电镀基板的制造方法
US11972952B2 (en) 2018-12-14 2024-04-30 Lam Research Corporation Atomic layer deposition on 3D NAND structures
US12002679B2 (en) 2019-04-11 2024-06-04 Lam Research Corporation High step coverage tungsten deposition
US12237221B2 (en) 2019-05-22 2025-02-25 Lam Research Corporation Nucleation-free tungsten deposition
US12077858B2 (en) 2019-08-12 2024-09-03 Lam Research Corporation Tungsten deposition

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Publication number Publication date
TW200948476A (en) 2009-12-01
KR20100105722A (ko) 2010-09-29
WO2009086230A2 (en) 2009-07-09
CN105671524B (zh) 2018-09-11
TWI494164B (zh) 2015-08-01
US20090162681A1 (en) 2009-06-25
WO2009086230A3 (en) 2009-09-17
CN105671524A (zh) 2016-06-15
JP2011509344A (ja) 2011-03-24
JP5982092B2 (ja) 2016-08-31

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Application publication date: 20110209