CN101955732A - 一种化学机械抛光液 - Google Patents
一种化学机械抛光液 Download PDFInfo
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- CN101955732A CN101955732A CN2009100547135A CN200910054713A CN101955732A CN 101955732 A CN101955732 A CN 101955732A CN 2009100547135 A CN2009100547135 A CN 2009100547135A CN 200910054713 A CN200910054713 A CN 200910054713A CN 101955732 A CN101955732 A CN 101955732A
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- 238000005498 polishing Methods 0.000 title claims abstract description 47
- 239000000126 substance Substances 0.000 title claims abstract description 14
- 150000003839 salts Chemical class 0.000 claims abstract description 9
- 239000004094 surface-active agent Substances 0.000 claims abstract description 8
- 239000012530 fluid Substances 0.000 claims description 15
- 239000007788 liquid Substances 0.000 claims description 11
- ABLZXFCXXLZCGV-UHFFFAOYSA-N Phosphorous acid Chemical compound OP(O)=O ABLZXFCXXLZCGV-UHFFFAOYSA-N 0.000 claims description 10
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 claims description 6
- 239000013543 active substance Substances 0.000 claims description 6
- 239000006061 abrasive grain Substances 0.000 claims description 5
- 229920003171 Poly (ethylene oxide) Polymers 0.000 claims description 3
- WGCNASOHLSPBMP-UHFFFAOYSA-N hydroxyacetaldehyde Natural products OCC=O WGCNASOHLSPBMP-UHFFFAOYSA-N 0.000 claims description 3
- -1 polyoxyethylene Polymers 0.000 claims description 3
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 2
- 229910010413 TiO 2 Inorganic materials 0.000 claims description 2
- 150000003863 ammonium salts Chemical class 0.000 claims description 2
- 239000003093 cationic surfactant Substances 0.000 claims description 2
- 150000003242 quaternary ammonium salts Chemical class 0.000 claims description 2
- ACVYVLVWPXVTIT-UHFFFAOYSA-N phosphinic acid Chemical compound O[PH2]=O ACVYVLVWPXVTIT-UHFFFAOYSA-N 0.000 abstract 2
- 239000002245 particle Substances 0.000 abstract 1
- 230000000694 effects Effects 0.000 description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- UIIMBOGNXHQVGW-UHFFFAOYSA-M Sodium bicarbonate Chemical compound [Na+].OC([O-])=O UIIMBOGNXHQVGW-UHFFFAOYSA-M 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- 229960001866 silicon dioxide Drugs 0.000 description 3
- 235000012239 silicon dioxide Nutrition 0.000 description 3
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 2
- 239000000654 additive Substances 0.000 description 2
- 230000000996 additive effect Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 229910052700 potassium Inorganic materials 0.000 description 2
- 239000011591 potassium Substances 0.000 description 2
- 229920002565 Polyethylene Glycol 400 Polymers 0.000 description 1
- WCUXLLCKKVVCTQ-UHFFFAOYSA-M Potassium chloride Chemical compound [Cl-].[K+] WCUXLLCKKVVCTQ-UHFFFAOYSA-M 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 238000005119 centrifugation Methods 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 230000003750 conditioning effect Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 239000003792 electrolyte Substances 0.000 description 1
- 238000003912 environmental pollution Methods 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- BWHMMNNQKKPAPP-UHFFFAOYSA-L potassium carbonate Substances [K+].[K+].[O-]C([O-])=O BWHMMNNQKKPAPP-UHFFFAOYSA-L 0.000 description 1
- 235000015320 potassium carbonate Nutrition 0.000 description 1
- 239000001103 potassium chloride Substances 0.000 description 1
- 235000011164 potassium chloride Nutrition 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/31051—Planarisation of the insulating layers
- H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
- C09K3/1463—Aqueous liquid suspensions
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Materials Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Abstract
本发明公开了一种化学机械抛光液，包含：研磨颗粒，次亚磷酸(H3PO2)或其盐，表面活性剂。该抛光液为全新氧化物(Oxide)CMP配方，比传统的配方具有更快的氧化物(Oxide)去除速率。
Description
技术领域
本发明涉及一种化学机械抛光液。
背景技术
随着半导体技术的不断发展，以及大规模集成电路互连层的不断增加，导电层和绝缘介质层的平坦化技术变得尤为关键。二十世纪80年代，由IBM公司首创的化学机械研磨(CMP)技术被认为是目前全局平坦化的最有效的方法。
化学机械研磨(CMP)由化学作用、机械作用以及这两种作用结合而成。它通常由一个带有抛光垫的研磨台，及一个用于承载芯片的研磨头组成。其中研磨头固定住芯片，然后将芯片的正面压在抛光垫上。当进行化学机械研磨时，研磨头在抛光垫上线性移动或是沿着与研磨台一样的运动方向旋转。与此同时，含有研磨剂的浆液被滴到抛光垫上，并因离心作用平铺在抛光垫上。芯片表面在机械和化学的双重作用下实现全局平坦化。
Oxide CMP在CMP领域中应用广泛，例如用于ILD(inter-level dielectrics)CMP，STI(浅沟槽隔离)等，其目的是通过抛光，去除过量的二氧化硅，形成所需的平坦的表面。
传统的Oxide CMP研磨液主要是碱性的、高浓度的二氧化硅研磨液，添加物多为KOH。除此之外，还可以进一步加入提高去除速度的添加剂，例如：美国专利US20060162261A1用加入碳酸氢钾的方法提高Oxide的去除速度。但是通常用碳酸氢钾或碳酸钾对二氧化硅的抛光速度提高有限。如果继续提高碳酸氢钾的浓度，会因为电解质浓度过高，迅速降低抛光液的稳定性。因此需要提供一种能显著提高抛光速度的化学机械抛光液。
发明内容
本发明的目的是克服现有技术中存在的抛光速率不够大，抛光效果不佳的缺陷，提供一种全新氧化物(Oxide)CMP配方，比传统的配方具有更快的氧化物(Oxide)去除速率。
本发明的化学机械抛光液同时含有：研磨颗粒，次亚磷酸(H3PO2)或其盐，表面活性剂。
在本发明中，所述的研磨颗粒选自SiO2、Al2O3、ZrO2、CeO2、SiC、Fe2O3、TiO2和Si3N4中的一种或多种，其含量为质量百分比0.1～50％。
在本发明中，所述的次亚磷酸(H3PO2)或其盐包括金属盐、铵盐、季铵盐。优选金属钾盐。其含量为质量百分比0.1～5％。
在本发明中，所述的表面活性剂包括阳离子型表面活性剂、阴离子型表面活性剂，以及非离子型表面活性剂。优选非离子型表面活性剂，该非离子型表面活性剂优选聚乙二醇(PEG 400)，平均分子量为380-420。表面活性剂的含量为50-500ppm。
在本发明中，化学机械抛光液为碱性，pH值为9-14，较佳的，pH值为10-12。
本发明的技术效果是：本发明采用全新的配方，各组分之间能更好的协调，对氧化物(Oxide)的去除速度具有更高的提升作用，并且抛光效果也更好。由于抛光速率的提高，减少了抛光时间，提高了生产效率，降低了制造成本。同时，由于抛光速率的提高，可以相对降低抛光液中化学品的用量，继而进一步减少环境污染。
具体实施方式
下面通过具体实施方式来进一步说明本发明的内容。
按照表1配方，将各组分简单混合到去离子水中，用碱性pH调节剂(KOH)调节到所需要的pH值，即可得到本发明的化学机械抛光液。
表1、实施例1～14
效果实施例：
下面将本发明的优选实施例与现有技术中的化学机械抛光液进行抛光对比，进一步阐述本发明的优点。
抛光条件：抛光机台为Logitech(英国)1PM52型，12英寸politex抛光垫(pad)，4cm*4cm正方形Wafer，研磨压力4psi，研磨台(polishing table)转速70转/分钟，研磨头(carrier)自转转速150转/分钟，抛光液滴加速度100ml/min。
表2本发明实施例10～14与对比例1、2配方及效果对比
从效果实施例可以看出，加入次亚磷酸(盐)，TEOS的去除速率显著高于不加次亚磷酸(盐)的对比实施例1；在其他各组分含量都相同的情况下，次亚磷酸(盐)的去除速率都高于对比例2的碳酸氢钾，其中，次亚磷酸钾对TEOS去除速率提升效果最佳。因此，由于本发明的化学机械抛光液加入了次亚磷酸钾，能更好的协调抛光液的组分，使得抛光速率大大增加，并且抛光效果也更好。
Claims (10)
1.一种化学机械抛光液，包含：研磨颗粒，次亚磷酸或其盐，表面活性剂。
2.如权利要求1所述的抛光液，其特征在于：所述的研磨颗粒选自SiO2、Al2O3、ZrO2、CeO2、SiC、Fe2O3、TiO2和Si3N4中的一种或多种。
3.如权利要求1所述的抛光液，其特征在于：所述的研磨颗粒的含量为质量百分比0.1～50％。
4.如权利要求1所述的抛光液，其特征在于：所述的次亚磷酸或其盐选自金属盐、铵盐和季铵盐中的一种或多种。
5.如权利要求1所述的抛光液，其特征在于：所述的次亚磷酸或其盐的含量为质量百分比0.1～5％。
6.如权利要求1所述的抛光液，其特征在于：所述的表面活性剂选自阳离子型表面活性剂、阴离子型表面活性剂和非离子型表面活性剂中的一种或多种。
7.如权利要求6所述的抛光液，其特征在于：所述非离子型表面活性剂为聚乙二醇，所述聚乙二醇的平均分子量为380-420。
8.如权利要求1所述的抛光液，其特征在于：所述表面活性剂的含量为质量百分比50-500ppm。
9.如权利要求1所述的抛光液，其特征在于：所述抛光液的pH值为9-14。
10.如权利要求9所述的抛光液，其特征在于：所述抛光液的pH值为10-12。
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN200910054713.5A CN101955732B (zh) | 2009-07-13 | 2009-07-13 | 一种化学机械抛光液 |
| PCT/CN2010/001035 WO2011006347A1 (zh) | 2009-07-13 | 2010-07-12 | 一种化学机械抛光液 |
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| CN200910054713.5A CN101955732B (zh) | 2009-07-13 | 2009-07-13 | 一种化学机械抛光液 |
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| Publication Number | Publication Date |
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| CN101955732A true CN101955732A (zh) | 2011-01-26 |
| CN101955732B CN101955732B (zh) | 2016-06-15 |
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| WO (1) | WO2011006347A1 (zh) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10727374B2 (en) | 2015-09-04 | 2020-07-28 | Seoul Semiconductor Co., Ltd. | Transparent conductive structure and formation thereof |
| US10407315B2 (en) | 2016-04-14 | 2019-09-10 | Seoul Semiconductor Co., Ltd. | Method and/or system for synthesis of zinc oxide (ZnO) |
| US10981801B2 (en) | 2016-04-14 | 2021-04-20 | Seoul Semiconductor Co., Ltd. | Fluid handling system for synthesis of zinc oxide |
| US10981800B2 (en) | 2016-04-14 | 2021-04-20 | Seoul Semiconductor Co., Ltd. | Chamber enclosure and/or wafer holder for synthesis of zinc oxide |
| CN106566415A (zh) * | 2016-10-28 | 2017-04-19 | 扬州翠佛堂珠宝有限公司 | 一种蓝宝石研磨液 |
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| JP2004006628A (ja) * | 2002-03-27 | 2004-01-08 | Hitachi Ltd | 半導体装置の製造方法 |
| JP4202201B2 (ja) * | 2003-07-03 | 2008-12-24 | 株式会社フジミインコーポレーテッド | 研磨用組成物 |
| US7288021B2 (en) * | 2004-01-07 | 2007-10-30 | Cabot Microelectronics Corporation | Chemical-mechanical polishing of metals in an oxidized form |
| US7161247B2 (en) * | 2004-07-28 | 2007-01-09 | Cabot Microelectronics Corporation | Polishing composition for noble metals |
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| Publication number | Publication date |
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| WO2011006347A1 (zh) | 2011-01-20 |
| CN101955732B (zh) | 2016-06-15 |
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Effective date of registration: 20160928 Address after: 201201 Pudong New Area East Road, No. 5001 Jinqiao Export Processing Zone (South) T6-9 floor, the bottom of the Patentee after: Anji Microelectronics (Shanghai) Co., Ltd. Address before: 201203, room 5, building 3000, 613-618 East Avenue, Zhangjiang hi tech park, Shanghai, Pudong New Area Patentee before: Anji Microelectronics (Shanghai) Co., Ltd. |
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Address after: 201201 Pudong New Area East Road, No. 5001 Jinqiao Export Processing Zone (South) T6-9 floor, the bottom of the Patentee after: Anji microelectronic technology (Shanghai) Limited by Share Ltd Address before: 201201 Pudong New Area East Road, No. 5001 Jinqiao Export Processing Zone (South) T6-9 floor, the bottom of the Patentee before: Anji Microelectronics (Shanghai) Co., Ltd. |