CN101939823B - 利用稀释气体的乙烷植入 - Google Patents

利用稀释气体的乙烷植入 Download PDF

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Publication number
CN101939823B
CN101939823B CN2009801043529A CN200980104352A CN101939823B CN 101939823 B CN101939823 B CN 101939823B CN 2009801043529 A CN2009801043529 A CN 2009801043529A CN 200980104352 A CN200980104352 A CN 200980104352A CN 101939823 B CN101939823 B CN 101939823B
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CN
China
Prior art keywords
gas
ion
carbon
ethane
species
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN2009801043529A
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English (en)
Chinese (zh)
Other versions
CN101939823A (zh
Inventor
奎格·R·钱尼
阿多夫·R·多利
克里斯多夫·R·汉特曼
艾力克斯恩德·S·培尔
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Varian Semiconductor Equipment Associates Inc
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Varian Semiconductor Equipment Associates Inc
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Publication of CN101939823A publication Critical patent/CN101939823A/zh
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Expired - Fee Related legal-status Critical Current
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/48—Ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/08—Ion sources; Ion guns
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/202—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by the semiconductor materials
    • H10P30/204—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by the semiconductor materials into Group IV semiconductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/208—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping of electrically inactive species
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/225—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping of a molecular ion, e.g. decaborane
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/006—Details of gas supplies, e.g. in an ion source, to a beam line, to a specimen or to a workpiece

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  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Electron Tubes For Measurement (AREA)
  • Materials For Medical Uses (AREA)
CN2009801043529A 2008-02-11 2009-02-11 利用稀释气体的乙烷植入 Expired - Fee Related CN101939823B (zh)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US2754508P 2008-02-11 2008-02-11
US61/027,545 2008-02-11
US12/367,741 2009-02-09
US12/367,741 US8003957B2 (en) 2008-02-11 2009-02-09 Ethane implantation with a dilution gas
PCT/US2009/033740 WO2009102754A2 (en) 2008-02-11 2009-02-11 Ethane implantation with a dilution gas

Publications (2)

Publication Number Publication Date
CN101939823A CN101939823A (zh) 2011-01-05
CN101939823B true CN101939823B (zh) 2012-07-18

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
CN2009801043529A Expired - Fee Related CN101939823B (zh) 2008-02-11 2009-02-11 利用稀释气体的乙烷植入

Country Status (6)

Country Link
US (1) US8003957B2 (https=)
JP (1) JP5710272B2 (https=)
KR (1) KR101524858B1 (https=)
CN (1) CN101939823B (https=)
TW (1) TWI443717B (https=)
WO (1) WO2009102754A2 (https=)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8455839B2 (en) * 2010-03-10 2013-06-04 Varian Semiconductor Equipment Associates, Inc. Cleaning of an extraction aperture of an ion source
US8524584B2 (en) 2011-01-20 2013-09-03 Axcelis Technologies, Inc. Carbon implantation process and carbon ion precursor composition
JP5665679B2 (ja) * 2011-07-14 2015-02-04 住友重機械工業株式会社 不純物導入層形成装置及び静電チャック保護方法
US8937003B2 (en) * 2011-09-16 2015-01-20 Varian Semiconductor Equipment Associates, Inc. Technique for ion implanting a target
US9196452B2 (en) * 2013-03-08 2015-11-24 Taiwan Semiconductor Manufacturing Company, Ltd. Methods and apparatus for carbon ion source head
US9524849B2 (en) 2013-07-18 2016-12-20 Varian Semiconductor Equipment Associates, Inc. Method of improving ion beam quality in an implant system
US9677171B2 (en) * 2014-06-06 2017-06-13 Varian Semiconductor Equipment Associates, Inc. Method of improving ion beam quality in a non-mass-analyzed ion implantation system
CN113936984A (zh) * 2021-09-14 2022-01-14 长江存储科技有限责任公司 碳离子产生方法、组件及离子注入设备

Citations (1)

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US6183843B1 (en) * 1991-12-06 2001-02-06 Raytheon Company Method for producing low reflectance diamond and products therefor

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US4474827A (en) * 1982-07-08 1984-10-02 Ferralli Michael W Ion induced thin surface coating
US5346600A (en) * 1992-08-14 1994-09-13 Hughes Aircraft Company Plasma-enhanced magnetron-sputtered deposition of materials
US5558718A (en) * 1994-04-08 1996-09-24 The Regents, University Of California Pulsed source ion implantation apparatus and method
JP3342201B2 (ja) * 1994-11-14 2002-11-05 独立行政法人産業技術総合研究所 光触媒用酸化チタン含有膜被覆基体及びその製造方法
US5693376A (en) * 1995-06-23 1997-12-02 Wisconsin Alumni Research Foundation Method for plasma source ion implantation and deposition for cylindrical surfaces
US6090456A (en) * 1997-05-03 2000-07-18 The United States Of America As Represented By The Secretary Of The Air Force Process for large area deposition of diamond-like carbon films
US6159824A (en) * 1997-05-12 2000-12-12 Silicon Genesis Corporation Silicon-on-silicon wafer bonding process using a thin film blister-separation method
US7154153B1 (en) * 1997-07-29 2006-12-26 Micron Technology, Inc. Memory device
JP2000064025A (ja) * 1998-06-11 2000-02-29 Mitsubishi Heavy Ind Ltd 炭窒化ホウ素膜の製造方法
JP2000204181A (ja) * 1999-01-11 2000-07-25 Sony Corp 樹脂の表面硬化方法及び表面硬化樹脂、並びにその製造装置
JP2000103884A (ja) * 1998-09-30 2000-04-11 Sony Corp プラスチックスの表面改質方法およびこの表面改質方法を用いて改質されたプラスチックス
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JP4416259B2 (ja) * 2000-03-24 2010-02-17 キヤノンアネルバ株式会社 質量分析装置
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Also Published As

Publication number Publication date
WO2009102754A2 (en) 2009-08-20
KR20100135733A (ko) 2010-12-27
JP2011514668A (ja) 2011-05-06
JP5710272B2 (ja) 2015-04-30
TWI443717B (zh) 2014-07-01
KR101524858B1 (ko) 2015-06-01
CN101939823A (zh) 2011-01-05
WO2009102754A3 (en) 2009-10-08
US20090200460A1 (en) 2009-08-13
US8003957B2 (en) 2011-08-23
TW200947532A (en) 2009-11-16

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Granted publication date: 20120718

Termination date: 20200211