CN101937685B - 利用加热对磁阻结构提供势垒的方法和系统 - Google Patents

利用加热对磁阻结构提供势垒的方法和系统 Download PDF

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CN101937685B
CN101937685B CN201010216900.1A CN201010216900A CN101937685B CN 101937685 B CN101937685 B CN 101937685B CN 201010216900 A CN201010216900 A CN 201010216900A CN 101937685 B CN101937685 B CN 101937685B
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layer
barrier layer
tunnel barrier
transducer
annealing
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CN101937685A (zh
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C·帕克
Q·伦
M·帕卡拉
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Western Digital Technologies Inc
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    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
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    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127—Structure or manufacture of heads, e.g. inductive
    • B—PERFORMING OPERATIONS; TRANSPORTING
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    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
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    • G11B5/3906—Details related to the use of magnetic thin film layers or to their effects
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    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
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    • H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
    • H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
    • H01F10/3268—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the exchange coupling being asymmetric, e.g. by use of additional pinning, by using antiferromagnetic or ferromagnetic coupling interface, i.e. so-called spin-valve [SV] structure, e.g. NiFe/Cu/NiFe/FeMn
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    • Y10T29/4902—Electromagnet, transformer or inductor
    • Y10T29/49021—Magnetic recording reproducing transducer [e.g., tape head, core, etc.]
    • Y10T29/49032—Fabricating head structure or component thereof
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    • Y10T29/49—Method of mechanical manufacture
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    • Y10T29/4902—Electromagnet, transformer or inductor
    • Y10T29/49021—Magnetic recording reproducing transducer [e.g., tape head, core, etc.]
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    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
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Abstract

本发明描述了一种提供磁记录换能器的方法和系统。该方法和系统包括为磁性元件提供被钉扎层。一方面，提供了磁性元件的隧道势垒层的一部分。在提供该部分隧道势垒层后退火磁记录换能器。退火温度高于室温。在退火后提供隧道势垒层的剩余部分。另一方面，在退火磁换能器之前，磁换能器被转移至高真空退火装置。在该方面，可以在提供隧道势垒的任意部分之前或在提供隧道势垒的至少一部分之后退火磁换能器。退火在高真空退火装置中执行。还提供了磁性元件的自由层。

Description

利用加热对磁阻结构提供势垒的方法和系统
背景技术
图1示出在读取换能器中形成隧道磁阻元件的传统方法10。读取换能器包括使用方法10形成的磁性隧道结。通过步骤12沉积常规隧道势垒层(tunneling barrier layer)以下的磁阻传感器中的层或堆叠。磁阻堆叠通常形成于其它结构之上，例如屏蔽层和/或写换能器。磁阻堆叠层通常是均厚沉积(blanket deposited)的。隧道势垒层以下的层通常包括(多个)种晶(seed)层、常规反铁磁(AFM)层以及常规被钉扎层(或固定层)。可选地通过步骤14沉积金属Mg(镁)层。Mg层可能是常规MgO势垒层所需要的。常规MgO势垒层通过步骤16被沉积。常规的MgO势垒层是结晶绝缘体。在常规MgO势垒层被沉积后，换能器可通过步骤18原位高温加热。因此，常规换能器可以在形成MgO势垒层的沉积室中加热。一般使用大约三百或四百摄氏度或更高的高温。通过步骤20提供自由层。之后，通过步骤22完成常规隧道磁阻元件以及换能器的剩余部分的制造。步骤22可包括限定常规隧道磁阻元件，该元件是磁道宽度方向和磁片(strip)高度方向的读取传感器。也可以形成其它结构，例如硬偏置结构、触点、屏蔽层以及写入换能器。磁道宽度方向与气垫面(ABS)平行并且通常垂直于磁阻堆叠的各层。
尽管方法10可以用来制造隧道磁阻元件，但这种方法存在缺点。对于在高密度磁记录设备中的使用，例如在大约每平方英寸五百吉比特的磁记录设备中的使用，要求隧道磁阻元件具有某些特性。快速记录和高信噪比(SNR)要求低电阻面面积(resistance times area，RA)(例如低于1Ω-μm2)和高隧道磁阻(TMR)。然而，使用常规方法10制造的常规结晶隧道势垒层产生的RA和TMR可能不足以用于高密度记录应用。使用步骤14中提供的Mg层可改善常规MgO势垒层的结晶度，并因此也改善RA和TMR。然而，RA和TMR的改善可能是不充分的。进一步地，在步骤18中执行的加热可能无法显著改善常规MgO势垒层，并可能导致钉扎层的部分和SAF的扩散，这会对常规磁性元件的性能造成有害影响。因此，仍旧期望得到一种用于高密度记录的改善的隧道势垒层和由此而改善的磁阻元件。
发明内容
本发明描述了一种提供磁记录换能器的方法和系统。该方法和系统包括提供磁性元件的被钉扎层。一方面，磁性元件的隧道势垒层的一部分被提供。在提供隧道势垒层的该部分后，退火磁记录换能器。退火温度高于室温。隧道势垒层的剩余部分在退火后提供。另一方面，磁换能器在退火前转移至高真空退火装置。在这方面，磁换能器可以在隧道势垒层的任意部分被提供前退火，或者在隧道势垒层的至少一部分被提供后退火。退火在高真空退火装置中执行。还提供了磁性元件的自由层。
附图说明
图1是示出制造读取换能器的常规方法的流程图。
图2是制造读取换能器的方法的示例性实施例的流程图。
图3是示出制造读取换能器的方法的另一示例性实施例的流程图。
图4示出磁阻结构的示例性实施例。
图5示出包括磁阻结构的换能器的示例性实施例。
图6是制造磁换能器的方法的另一示例性实施例的流程图。
图7示出磁性元件的另一示例性实施例。
图8示出包含磁记录换能器的磁记录头的示例性实施例。
具体实施方式
图2是用于制造磁阻元件，具体是用于制造在读取换能器中用作读取传感器的隧道磁阻元件的方法100的示例性实施例的流程图。为简单起见，一些步骤可以省略或与其它步骤结合。方法100也可以在形成读取换能器的其它结构如屏蔽层后开始。方法100也在提供单个磁阻结构的背景下描述。然而，方法100可用来基本上同时制造多个结构。方法100也在特定层的情况下描述。然而，在一些实施例中，这种层可以包括子层(一个或多个)。
通过步骤102提供磁性元件的被钉扎层(pinned layer)。在一个实施例中，被钉扎层在钉扎层或其它层上提供，所述钉扎层或其它层经配置在特定方向上固定或钉扎钉扎层的磁化。特定方向可包括但不限于垂直于ABS。在另一实施例中，可在下面描述的MgO(氧化镁)势垒层之后提供被钉扎层。在这样的实施例中，可在被钉扎层上提供钉扎层。在一个实施例中，要求被钉扎层为合成反铁磁体(SAF)。在这样的实施例中，步骤102包括沉积至少两层由无磁性分隔层隔离的铁磁层。在一些实施例中，铁磁层是反铁磁性耦合的。
通过步骤104为磁性元件提供一部分隧道势垒层。要求所提供的隧道势垒层为结晶体。因此，步骤104可包括沉积MgO，以形成部分势垒层。在一个实施例中，在步骤104中沉积隧道势垒层总厚度的至少百分之二十。例如，在一个实施例中，厚度为十埃的势垒层的两埃在步骤104中沉积。在另一实施例中，隧道势垒层总厚度的不少于百分之四十在步骤104中提供。因此，厚度为十埃的势垒层的四埃可以在步骤104中提供。在另一实施例中，不少于百分之八十的隧道势垒层在步骤104中提供。对于在步骤104中沉积的隧道势垒层的部分，其它厚度和其它百分比也是可能的。然而，在步骤104中提供的隧道势垒层少于整个隧道势垒。另外，薄Mg(镁)层也可以在步骤104中提供。例如，可以形成厚度低于四埃的Mg层。
在提供部分隧道势垒层后，通过步骤106退火磁记录换能器。步骤106中的退火温度高于室温。然而，该温度是相对低的。在一些实施例中，使用的温度不高于四百摄氏度。在一些实施例中，退火温度不高于三百摄氏度。在一些实施例中，退火温度不高于二百摄氏度。在一些这样的实施例中，温度至少为一百摄氏度。在一些实施例中，该退火可以在隔离的、高真空的退火室中进行。高真空退火室可提供与系统剩余部分例如在换能器的各层沉积的原地中可用的真空相比更高的真空。在一些实施例中，高真空退火室能够实现不超过9×10-8托的压力。在一些这样的实施例中，实现的压力不高于5×10-8托。在各实施例中，高真空退火室能够实现不高于2×10-8托的压力。在一些实施例中，高真空退火室实现的高真空可以是8×10-9托或更低。因此，磁记录换能器可以在非常高的真空中退火。步骤106中的退火可以持续相对短的时间，例如至少五分钟且不超过二十分钟。
通过步骤108提供隧道势垒层的剩余部分。要求隧道势垒层是结晶绝缘体。因此，可以在步骤108中继续沉积MgO。步骤108在步骤106完成后发生。在步骤106中的磁记录换能器退火后提供隧道势垒层的剩余部分。隧道势垒层的总厚度可以在六埃到二十埃的范围内变化。
通过步骤110提供磁性元件的自由层。步骤110可包括提供形成自由层的一个或更多层。自由层也可以是SAF，可包括磁性层或其它介入层和/或具有另一结构。另外，也可以在磁性元件中提供覆盖层或其它层。在其它实施例中，可以提供额外的势垒层、分隔层、被钉扎层和/或其它层。
使用方法100，可以实现特性改善的磁性元件。特别地，可以制造高TMR和低RA的磁性元件。在一些实施例中，可获得低于1Ω-μm2的RA。在一些实施例中，也可以实现改善的热稳定性、高交换偏置以及高衰减场(roll offfield)。可以确信由于隧道势垒层的结晶度和/或化学计量比(stoichiometry)的改善，可得到改善的RA和TMR。相对的低温退火可以去除OH(氢氧)离子，否则该离子成为MgO隧道势垒层的一部分。特别地，Mg∶O的原子比与常规MgO势垒层的原子比相比可以更接近1∶1。在一些实施例中，Mg∶O的原子比可以小于1.2∶1并至少为1∶1。进一步地，也可以改善隧道势垒层的结晶度，导致改善的RA和/或TMR。因此，使用方法100制造的读取换能器的性能可以得到改善。
图3是示出制造读取换能器的方法120的另一示例性实施例的流程图。为简单起见，一些步骤可以省略或与其它步骤结合。方法120也可在形成读取换能器的其它结构如屏蔽层后开始。方法120也在提供单个磁阻结构的情况下描述。然而，方法120可用来基本上同时制造多个结构。方法120也在特定层的情况下描述。然而，在一些实施例中，这样的层可包括子层(一个或多个)。
通过步骤122提供磁性元件的钉扎层。在一些实施例中，步骤122包括沉积AFM层。例如，可以使用IrMn和/或另一AFM。AFM的取向可以在较晚的时候设置，例如通过加热以所需方向取向的场中的磁记录换能器来设置。在一个实施例中，该取向可以垂直于ABS。然而，在另一实施例中可以选择另一方向。
通过步骤124提供与钉扎层邻接的磁性元件的被钉扎层。步骤124与上述方法100的步骤102相似。在一个实施例中，被钉扎层在钉扎层上提供。在另一实施例中，被钉扎层可以在下面描述的MgO势垒层之后提供。在这样的实施例中，钉扎层可以在被钉扎层上提供。在一个实施例中，要求被钉扎层是SAF。在这样的实施例中，步骤124包括沉积由无磁性分隔层隔离的反铁磁性耦合的至少两个铁磁层。
通过步骤126为磁性元件提供隧道势垒层的一部分。要求提供的隧道势垒层是结晶体，并因此可包括MgO。在一个实施例中，隧道势垒层的总厚度的至少百分之二十在步骤126中沉积。在另一实施例中，隧道势垒层总厚度的不少于百分之四十被提供。在另一实施例中，隧道势垒层总厚度的不少于百分之八十在步骤126中提供。其它厚度和其它百分比也是可能的。然而，在步骤126中提供的隧道势垒层少于隧道势垒层厚度的百分之百。另外，厚度低于大约四埃的薄Mg层也可选地作为隧道势垒的一部分在步骤126中提供。
通过步骤128将磁换能器转移到高真空退火装置。在这样的实施例中，换能器可以在避免换能器暴露于周围环境的同时被转移到高真空退火室。换句话说，换能器可以在不破坏真空的情况下转移。另外，高真空退火室可以提供与系统剩余部分例如在沉积换能器的各层的原地中可用的真空相比更高的真空。例如，在一些实施例中，高真空退火室能够实现不超过9×10-8托的压力。在一些这样的实施例中，实现的压力不高于5×10-8托。在各实施例中，高真空退火室能够实现不高于2×10-8托的压力。在一些实施例中，高真空退火室中实现的高真空可以是8×10-9托或更低。
提供部分隧道势垒层和换能器转移到高真空退火室之后，磁记录换能器通过步骤130退火。步骤130中的退火温度高于室温。然而，该温度是相对低的，低于四百摄氏度。在一些实施例中，使用的温度不高于三百摄氏度。在一些实施例中，退火温度不高于二百摄氏度。在一些这样的实施例中，该温度至少为一百摄氏度。退火时间也可以很短。例如，在一些实施例中，退火持续五分钟到二十分钟或更短。因此，磁记录换能器可以在非常高的真空中退火。
隧道势垒层的剩余部分通过步骤132来提供。因此，可以在步骤132中继续MgO的沉积。步骤132在步骤130完成后进行。隧道势垒层的剩余部分在步骤130中的磁记录换能器退火后提供。隧道势垒层的总厚度的范围可以在六埃到二十埃之间。步骤132可包括在沉积隧道势垒的剩余部分之前，将换能器从高真空退火室转移到沉积室。可执行该转移而不将换能器暴露于周围环境。
通过步骤134提供磁性元件的自由层。因此在步骤134中沉积形成自由层的一个或更多层。自由层也可以是SAF，可包括磁性层或其它介入层和/或具有另一结构。另外，也可以在磁性元件中提供覆盖层或其它层。在其它实施例中，可以提供额外的势垒层、分隔层、被钉扎层和/或其它层。
方法130具有与方法100类似的益处。因此，具有改善的特性的磁性元件可以使用方法130获得。特别地，可以制造高TMR和低RA的磁性元件。在一些实施例中，可获得低于1Ω-μm2的RA。在一些实施例中，也可以实现改善的热稳定性、高交换偏置以及高衰减场。可以确信由于隧道势垒层的结晶度和/或化学计量比的改善，可得到改善的RA和TMR。相对的低温退火，特别是在高真空退火室中实现的高真空的退火可以去除OH离子，否则离子成为MgO隧道势垒层的部分。特别地，Mg∶O的原子比与常规MgO势垒层的原子比相比可以更接近1∶1。在一些实施例中，Mg∶O的原子比可以小于1.2∶1且至少为1∶1。而且，还可以改善隧道势垒层的结晶度。从而，可以改善RA和/或TMR。因此，使用方法100制造的读取换能器的性能可以得到改善。
图4示出可以使用方法100和/或120制造的磁阻元件200的示例性实施例。磁阻元件200可以在读取换能器中使用。为清晰起见，图4没有按比例绘制。另外，部分磁性元件可以省略。
磁性元件200包括被钉扎层202、隧道势垒层204以及自由层206。隧道势垒层204位于自由层206和被钉扎层202之间。被钉扎层202可在步骤102或124中形成，并可与钉扎层邻接(图4中未示出)。自由层可分别使用方法100或120的步骤110或134形成。隧道势垒层204可分别使用方法100或120的步骤104-108或步骤126-132形成。在示出的实施例中，隧道势垒层204包括两部分，204A和204B。第一部分204A可以在退火前形成，例如在步骤104或126中形成。而第二部分204B在退火后形成，例如在步骤108或132中形成。隧道势垒层204的化学计量比可以更接近所要求的化学计量比。例如，对于结晶的MgO势垒层204，化学计量比包括低于1.2∶1且至少为1∶1的Mg对O的原子比。进一步地，结晶的MgO势垒层204的晶体结构可以更接近所要求的晶体结构。
磁性元件200可以具有改善的特性，例如高TMR和低RA。在一些实施例中，可获得低于1Ω-μm2的RA。在一些实施例中，对于磁性元件200，也可以实现改善的热稳定性、高交换偏置，以及高衰减场。可以确信由于隧道势垒层的结晶度和/或化学计量比的改善，可得到改善的RA和TMR。因此，包括磁性元件200的读取换能器的性能可以得到改善。
图5示出包括磁阻结构的读取换能器210的示例性实施例。为清晰起见，图5没有按比例绘制。另外，磁换能器的多个部分可以省略。磁换能器210包括屏蔽层212、磁性元件200’、绝缘体216以及硬偏置结构220。在示出的实施例中，读取传感器200’用于电流垂直于平面(CPP)的模式中。因此，包括绝缘体216。然而，在另一实施例中，读取传感器200’也可以用于电流在平面内(CIP)的模式中。在这样的实施例中，绝缘体216可以省略。
磁性元件200’与磁性元件200类似，并因此包括被钉扎层202’、具有部分204A’和部分204B’的隧道势垒204’以及自由层206’。由于磁性元件200’使用方法100或120制造，所以磁性元件200’可具有改善的特性，例如高TMR和低RA。因此，读取换能器210可具有改善的性能，特别是在约每平方英寸五百吉比特或更高的高密度情形中。
图6是制造磁换能器的方法150的另一示例性实施例的流程图。为简单起见，一些步骤可以省略或与其它步骤结合。方法150也可以在形成读取换能器的其它结构如屏蔽后开始。方法150也在提供单个磁阻结构的情况下描述。然而，方法150可用于基本上同时制造多个结构。方法150也在特定层的情况下描述。然而，在一些实施例中，这样的层可包括子层(一个或多个)。
通过步骤152提供磁性元件的被钉扎层。步骤152与上述方法100和120的步骤102和124类似。可以选择性地通过步骤154为磁性元件提供隧道势垒层的一部分。然而，在另一实施例中，可以省略步骤154。
磁换能器通过步骤156转移到高真空退火装置。因此步骤156类似于步骤128。可以在避免将换能器暴露于周围环境的情况下将换能器转移到高真空退火室中。换句话说，换能器可以被转移而不破坏真空。另外，高真空退火室可以提供与在系统剩余部分例如在沉积换能器的各层的原地中可用的真空相比更高的真空。例如，在一些实施例中，高真空退火室能够实现不超过9×10-8托的压力。在一些这样的实施例中，实现的压力不高于5×10-8托。在各实施例中，高真空退火室能够实现不高于2×10-8托的压力。在一些实施例中，高真空退火室中实现的高真空可以是8×10-9托或更低。
磁记录换能器在换能器转移至高真空退火室之后通过步骤158进行退火。步骤158中的退火温度高于室温。然而，所述温度是相对低的，低于四百摄氏度。在一些实施例中，使用的温度不高于三百摄氏度。在一些实施例中，退火温度不高于二百摄氏度。在一些这样的实施例中，该温度至少为一百摄氏度。退火占用的时间也可能很短。例如，在一些实施例中，退火持续五分钟到二十分钟或更短。因此，磁记录换能器可以在很高的真空中退火。
隧道势垒层的剩余部分通过步骤160来提供。在一些实施例中，其中步骤154被省略，整个隧道势垒层在步骤160中提供。在一些实施例中，隧道势垒层是结晶的MgO。因此，MgO可在步骤154中沉积。因此，厚度不超过四埃的薄Mg层也可以作为隧道势垒层的部分在步骤154或步骤160中提供。隧道势垒层的剩余部分在通过步骤158退火磁记录换能器之后提供。隧道势垒层的总厚度的范围可以是从六埃到二十埃。步骤156包括在沉积隧道势垒的剩余部分前将换能器从高真空退火室转移至沉积室。该转移也可以在换能器不暴露于周围环境的情况下进行。
磁性元件的自由层通过步骤162提供。因此形成自由层的一个或更多层在步骤162中沉积。自由层也可以是SAF，可包括磁性层或其它介入层和/或具有另一结构。另外，也可以在磁性元件中提供覆盖层或其它层。在其它实施例中，可以提供额外的势垒层、分隔层、被钉扎层和/或其它层。
方法150可以具有类似于方法100和120的益处。因此，具有改善的特性的磁性元件可以使用方法150获得。尽管退火可以在形成隧道势垒层的任意部分之前发生，但退火仍然可以改善磁性元件的化学计量比和/或结晶度。可以确信在步骤158中对换能器的加热可以提供后续加热，其功能类似于对隧道势垒层已沉积部分的退火。因此，方法100和120的益处也可以使用方法150实现。因此，使用方法150制造的读取换能器的性能可以得到改善。
图7示出可使用方法150制造的磁阻元件300的另一示例性实施例。磁性元件300可以在读取换能器中使用。为清晰起见，图7没有按比例绘制。另外，磁性元件的多个部分可以省略。
磁性元件300包括被钉扎层302、隧道势垒层304以及自由层306。隧道势垒层304位于自由层306和被钉扎层304之间。被钉扎层302可以在步骤152中形成，并可与钉扎层(图7中未示出)邻接。自由层可使用步骤162形成。隧道势垒层304可使用方法150的步骤154-160形成。在示出的实施例中，隧道势垒层304包括两部分，304A和304B。第一部分304A是可选的，并可以在退火前形成。第二部分304B在退火后形成，例如在步骤160中形成。隧道势垒层304的化学计量比可以更接近要求。例如，对于结晶的MgO势垒层304，化学计量比包括Mg对O的原子比，该原子比低于1.2∶1且至少为1∶1。而且，结晶的MgO势垒层204的晶体结构可以更接近要求。
磁性元件300可具有改善的特性，例如高TMR和低RA。在一些实施例中，可获得低于1Ω-μm2的RA。在一些实施例中，对于磁性元件300，也可实现改善的热稳定性、高交换偏置以及高衰减场。可以确信由于隧道势垒层的结晶度和/或化学计量比的改善，可得到改善的RA和TMR。因此，包括磁性元件200的读取换能器的性能可以得到改善。
图8示出包括磁阻结构的读取换能器310的示例性实施例。为清晰起见，图8没有按比例绘制。另外，可以省略磁换能器的多个部分。磁换能器310包括屏蔽层312、磁性元件300’、绝缘体316以及硬偏置结构320。在示出的实施例中，读取传感器300’用于CPP模式。因此，包括绝缘体316。然而，在另一实施例中，读取传感器300’也可以用于CIP模式。在这样的实施例中，可以省略绝缘体316。
磁性元件300’与磁性元件300相似，并因此包括被钉扎层302’、具有部分304A’和部分304B’的隧道势垒层304’以及自由层306’。由于磁性元件300’使用方法150制造，所以磁性元件300’可具有改善的特性，例如高TMR和低RA。因此，读取换能器310可具有改善的性能，特别是在约每平方英寸五百吉比特或更高的高密度的情形。因此，换能器310的性能可以得到改善。

Claims (17)

1.一种制造磁记录换能器的方法，包含：
提供磁性元件的被钉扎层；
为所述磁性元件提供隧道势垒层的一部分；
在提供所述隧道势垒层的所述部分后，以高于室温的温度退火所述磁记录换能器；
提供所述隧道势垒层的剩余部分，所述剩余部分在退火所述磁记录换能器后提供；以及
为所述磁性元件提供自由层。
2.根据权利要求1所述的方法，其中所述温度不高于四百摄氏度。
3.根据权利要求2所述的方法，其中所述温度不高于二百摄氏度。
4.根据权利要求1所述的方法，其中所述温度至少为一百摄氏度。
5.根据权利要求1所述的方法，进一步包含：
在退火磁换能器前且在形成无磁分隔层的部分后，将所述磁换能器转移至高真空退火装置。
6.根据权利要求5所述的方法，其中在避免将所述磁换能器暴露于周围环境的同时，执行转移所述磁换能器的步骤。
7.根据权利要求5所述的方法，其中所述高真空不高于9×10-8托。
8.根据权利要求5所述的方法，其中所述高真空不高于5×10-8托。
9.根据权利要求5所述的方法，其中所述高真空不高于2×10-8托。
10.根据权利要求5所述的方法，其中所述高真空不高于8×10-9托。
11.根据权利要求1所述的方法，其中所述被钉扎层是合成的反铁磁体SAF，所述反铁磁体包括具有第一磁化的第一铁磁层、具有第二磁化的第二铁磁层以及在所述第一铁磁层和所述第二铁磁层之间的无磁性层。
12.根据权利要求1所述的方法，其中所述隧道势垒层具有总厚度，并且所述隧道势垒层的所述部分的厚度不低于所述总厚度的百分之二十。
13.根据权利要求1所述的方法，其中所述隧道势垒层具有总厚度，并且所述隧道势垒层的所述部分的厚度不低于所述总厚度的百分之四十。
14.根据权利要求1所述的方法，其中所述隧道势垒层具有总厚度，并且所述隧道势垒层的所述部分的厚度不低于所述总厚度的百分之八十。
15.一种制造具有气垫面ABS的磁记录换能器的方法，包含：
提供磁性元件的被钉扎层；
提供所述磁性元件的隧道势垒层的一部分，所述隧道势垒层在完成后具有总厚度，所述隧道势垒层的所述部分的厚度至少为总厚度的百分之二十，并低于所述总厚度的百分之百；
将磁记录换能器转移至高真空退火装置；
在提供所述隧道势垒层的所述部分后，以至少一百摄氏度且不高于二百摄氏度的温度在所述高真空退火装置中退火所述磁记录换能器，所述高真空退火装置在退火期间具有不高于5×10-8托的压力；
在退火所述磁记录换能器后提供所述隧道势垒层的剩余部分；以及
提供所述磁性元件的自由层。
16.一种由权利要求15所述的方法制造的具有气垫面ABS的磁记录换能器，包含：
磁性元件，所述磁性元件包括被钉扎层、包括MgO的隧道势垒层以及自由层，所述隧道势垒层具有晶体结构和取向，所述隧道势垒层具有期望的化学计量比；以及
与所述磁性元件邻接的硬偏置结构。
17.根据权利要求16所述的磁记录换能器，其中所述期望的化学计量比包括低于1.2∶1且至少为1∶1的Mg与O的原子比。
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