CN101934490A - 超高电阻率硅抛光片的抛光工艺 - Google Patents
超高电阻率硅抛光片的抛光工艺 Download PDFInfo
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- CN101934490A CN101934490A CN 201010249524 CN201010249524A CN101934490A CN 101934490 A CN101934490 A CN 101934490A CN 201010249524 CN201010249524 CN 201010249524 CN 201010249524 A CN201010249524 A CN 201010249524A CN 101934490 A CN101934490 A CN 101934490A
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- polishing
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 52
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 50
- 239000010703 silicon Substances 0.000 title claims abstract description 49
- 238000007517 polishing process Methods 0.000 title claims abstract description 7
- 238000005498 polishing Methods 0.000 claims abstract description 99
- 238000000034 method Methods 0.000 claims abstract description 12
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 10
- 239000008367 deionised water Substances 0.000 claims description 9
- 229910021641 deionized water Inorganic materials 0.000 claims description 9
- 239000012530 fluid Substances 0.000 claims description 6
- 239000003795 chemical substances by application Substances 0.000 abstract description 3
- 238000004857 zone melting Methods 0.000 abstract description 3
- 238000011109 contamination Methods 0.000 abstract description 2
- 230000003670 easy-to-clean Effects 0.000 abstract 1
- 239000005416 organic matter Substances 0.000 abstract 1
- 239000001993 wax Substances 0.000 description 22
- 238000005516 engineering process Methods 0.000 description 8
- 239000000243 solution Substances 0.000 description 6
- 239000000919 ceramic Substances 0.000 description 5
- 239000000126 substance Substances 0.000 description 5
- 238000006243 chemical reaction Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000004140 cleaning Methods 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 238000012797 qualification Methods 0.000 description 2
- 238000007670 refining Methods 0.000 description 2
- 238000012827 research and development Methods 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 239000012670 alkaline solution Substances 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000005518 electrochemistry Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000012188 paraffin wax Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000004018 waxing Methods 0.000 description 1
Landscapes
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
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CN2010102495246A CN101934490B (zh) | 2010-08-10 | 2010-08-10 | 超高电阻率硅抛光片的抛光工艺 |
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CN2010102495246A CN101934490B (zh) | 2010-08-10 | 2010-08-10 | 超高电阻率硅抛光片的抛光工艺 |
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CN101934490A true CN101934490A (zh) | 2011-01-05 |
CN101934490B CN101934490B (zh) | 2011-08-10 |
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Cited By (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102709170A (zh) * | 2012-05-08 | 2012-10-03 | 常州天合光能有限公司 | 用于少子寿命测量的硅片表面处理方法 |
CN102729132A (zh) * | 2012-06-25 | 2012-10-17 | 中国科学院上海技术物理研究所 | 一种无蜡研磨精抛碲锌镉晶片的方法 |
CN103009222A (zh) * | 2012-12-03 | 2013-04-03 | 天津中环领先材料技术有限公司 | 一种高局部平整度重掺硅晶圆抛光片的无蜡抛光工艺 |
CN103042463A (zh) * | 2013-01-22 | 2013-04-17 | 万向硅峰电子股份有限公司 | 一种ic级重掺砷硅抛光片表面粗糙度的控制方法 |
CN103646851A (zh) * | 2013-12-05 | 2014-03-19 | 天津中环领先材料技术有限公司 | 一种减少单晶硅晶圆片划道的抛光工艺 |
CN104191352A (zh) * | 2014-08-29 | 2014-12-10 | 天津中环领先材料技术有限公司 | 一种提高抛光垫使用寿命的单晶硅晶圆片抛光方法 |
CN106625202A (zh) * | 2016-11-02 | 2017-05-10 | 浙江蓝特光学股份有限公司 | 一种晶圆片的加工方法及其抛光夹具 |
CN107378747A (zh) * | 2017-07-11 | 2017-11-24 | 天津华海清科机电科技有限公司 | 用于mems器件的化学机械抛光工艺 |
CN108242396A (zh) * | 2016-12-23 | 2018-07-03 | 有研半导体材料有限公司 | 一种降低硅抛光片表面粗糙度的加工方法 |
CN113894623A (zh) * | 2021-10-29 | 2022-01-07 | 广东先导微电子科技有限公司 | 一种锑化镓晶片的单面抛光方法及锑化镓抛光片 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005041710A (ja) * | 2003-07-23 | 2005-02-17 | Nippon Steel Corp | 炭化珪素単結晶、炭化珪素単結晶ウェハ及びその製造方法 |
CN101352829A (zh) * | 2007-07-24 | 2009-01-28 | 上海光炜电子材料有限公司 | 一种低粗糙度硅抛光片的加工方法 |
KR20090059251A (ko) * | 2007-12-06 | 2009-06-11 | 주식회사 실트론 | 고저항 실리콘 웨이퍼 제조 방법 |
-
2010
- 2010-08-10 CN CN2010102495246A patent/CN101934490B/zh active Active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005041710A (ja) * | 2003-07-23 | 2005-02-17 | Nippon Steel Corp | 炭化珪素単結晶、炭化珪素単結晶ウェハ及びその製造方法 |
CN101352829A (zh) * | 2007-07-24 | 2009-01-28 | 上海光炜电子材料有限公司 | 一种低粗糙度硅抛光片的加工方法 |
KR20090059251A (ko) * | 2007-12-06 | 2009-06-11 | 주식회사 실트론 | 고저항 실리콘 웨이퍼 제조 방법 |
Cited By (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102709170A (zh) * | 2012-05-08 | 2012-10-03 | 常州天合光能有限公司 | 用于少子寿命测量的硅片表面处理方法 |
CN102729132A (zh) * | 2012-06-25 | 2012-10-17 | 中国科学院上海技术物理研究所 | 一种无蜡研磨精抛碲锌镉晶片的方法 |
CN103009222A (zh) * | 2012-12-03 | 2013-04-03 | 天津中环领先材料技术有限公司 | 一种高局部平整度重掺硅晶圆抛光片的无蜡抛光工艺 |
CN103042463A (zh) * | 2013-01-22 | 2013-04-17 | 万向硅峰电子股份有限公司 | 一种ic级重掺砷硅抛光片表面粗糙度的控制方法 |
CN103646851A (zh) * | 2013-12-05 | 2014-03-19 | 天津中环领先材料技术有限公司 | 一种减少单晶硅晶圆片划道的抛光工艺 |
CN104191352A (zh) * | 2014-08-29 | 2014-12-10 | 天津中环领先材料技术有限公司 | 一种提高抛光垫使用寿命的单晶硅晶圆片抛光方法 |
CN106625202A (zh) * | 2016-11-02 | 2017-05-10 | 浙江蓝特光学股份有限公司 | 一种晶圆片的加工方法及其抛光夹具 |
CN108242396A (zh) * | 2016-12-23 | 2018-07-03 | 有研半导体材料有限公司 | 一种降低硅抛光片表面粗糙度的加工方法 |
CN108242396B (zh) * | 2016-12-23 | 2020-07-10 | 有研半导体材料有限公司 | 一种降低硅抛光片表面粗糙度的加工方法 |
CN107378747A (zh) * | 2017-07-11 | 2017-11-24 | 天津华海清科机电科技有限公司 | 用于mems器件的化学机械抛光工艺 |
CN107378747B (zh) * | 2017-07-11 | 2019-04-02 | 天津华海清科机电科技有限公司 | 用于mems器件的化学机械抛光工艺 |
CN113894623A (zh) * | 2021-10-29 | 2022-01-07 | 广东先导微电子科技有限公司 | 一种锑化镓晶片的单面抛光方法及锑化镓抛光片 |
CN113894623B (zh) * | 2021-10-29 | 2023-02-17 | 广东先导微电子科技有限公司 | 一种锑化镓晶片的单面抛光方法及锑化镓抛光片 |
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CN101934490B (zh) | 2011-08-10 |
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Effective date of registration: 20191213 Address after: 214200 Dongfen Avenue, Yixing Economic and Technological Development Zone, Wuxi City, Jiangsu Province Co-patentee after: TIANJIN ZHONGHUAN ADVANCED MATERIAL TECHNOLOGY Co.,Ltd. Patentee after: Zhonghuan leading semiconductor materials Co.,Ltd. Address before: 300384 Tianjin Binhai hi tech Industrial Park (outer ring) Haitai Development Road No. 8 Patentee before: TIANJIN ZHONGHUAN ADVANCED MATERIAL TECHNOLOGY Co.,Ltd. |
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Address after: 214200 Dongjia Avenue, Yixing Economic and Technological Development Zone, Wuxi City, Jiangsu Province Patentee after: Zhonghuan Leading Semiconductor Technology Co.,Ltd. Country or region after: China Patentee after: TIANJIN ZHONGHUAN ADVANCED MATERIAL TECHNOLOGY Co.,Ltd. Address before: 214200 Dongjia Avenue, Yixing Economic and Technological Development Zone, Wuxi City, Jiangsu Province Patentee before: Zhonghuan leading semiconductor materials Co.,Ltd. Country or region before: China Patentee before: TIANJIN ZHONGHUAN ADVANCED MATERIAL TECHNOLOGY Co.,Ltd. |
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