CN101925989B - 用于半导体封装的滚压囊封方法 - Google Patents

用于半导体封装的滚压囊封方法 Download PDF

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CN101925989B
CN101925989B CN2008801253077A CN200880125307A CN101925989B CN 101925989 B CN101925989 B CN 101925989B CN 2008801253077 A CN2008801253077 A CN 2008801253077A CN 200880125307 A CN200880125307 A CN 200880125307A CN 101925989 B CN101925989 B CN 101925989B
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阿野一章
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Abstract

使用具有可移动且可加热轮及加热器级的设备沉积树脂囊封化合物。提供包含粘合剂聚合树脂层(140)及惰性塑料化合物膜(141)的带。将所述带缠绕在轮(150)上以使得所述膜触及所述轮且所述层背对所述轮。将所述轮加热到高得足以将所述聚合树脂转变成低粘度状态的温度。将已组装有通过接合线(120)连接到衬底的多个半导体芯片(101)的衬底条带(110)放置于也被加热到所述转变温度的操作台(130)上。接着移动所述轮以沿着所述条带将所述低粘度树脂滚压在所述芯片及线上，同时分离所述惰性膜。因此囊封所述芯片及线。

Description

用于半导体封装的滚压囊封方法
技术领域
此大体来说涉及半导体装置及工艺的领域，且更具体来说，涉及基于滚压囊封技术的用于半导体装置的塑料封装的结构及制造方法。
背景技术
自从1960年代早期引入转移模制技术以来，所述技术一直是塑料封装中用于囊封半导体装置的受欢迎的方法。在此方法中，首先通过将半导体芯片物理附接到衬底及将芯片端子以导电方式连接到衬底垫(最常见的是通过接合线的弓形跨度)来将芯片组装到衬底(例如，引线框)上。然后，将衬底与所组装的芯片一起转移到模压机并将其定位在模具腔中。所述腔具有精密浇口，通过所述浇口挤压由活塞驱动的半粘性模制化合物。从所述浇口，所述化合物沿大致线性前部扩散到整个腔中。所述浇口经设计用于均匀、温和的前部渐进填充所述腔及嵌入芯片、接合线及衬底。制作所述模具、浇口、压力机等需要精密机器且因此是昂贵的；作为实例，用于约200个装置单位的模具可为约250,000美元。
模制化合物按常规是混合有催化剂及硬化剂的基于环氧聚合物的调配物；在模制操作之前，因所述化合物的部分交联状态而将其存储于低温度下。当温度增加时，所述化合物在约150℃的所谓玻璃转变温度下获得低粘度状态。在约175℃的温度范围中，通过所述浇口挤压所述化合物；然后，其在约175℃的温度下在存储装置中完全聚合(“固化”)。对于大多数模制化合物来说，模制及固化步骤所需的时间在6到8小时之间。
所述模制化合物的环氧聚合物通常含有高达约90％的无机填充物(例如，硅石)以减少由聚合物与半导体芯片的热膨胀系数(CTE)之间的多于一个数量级的差引起的热机械应力。这些填充物的直径具有在约35到75μm之间的分布；所述填充物可以为晶体状或球状，且因此具有对模具腔的精密浇口的磨损效应。因而，所述浇口需要周期修理或整修。整修浇口需要精密机器且因此为昂贵的；举例来说，整修200单位的模具花费约50,000美元。
典型的组装过程中所使用的接合线是由金或铜合金制成且具有约25μm的直径。在自动接合机中，通过接合机的毛细管供给线。在接合操作期间，所述毛细管将线附接到芯片，然后以弓形跨度将线移动到衬底，且将所述线附接到衬底。存在关于针对既定合金及线直径线跨度可以为多长、允许线在其自身重量下下垂的程度及跨度可经定位彼此多近的规范。
当模制化合物的前部从浇口渐进遍布整个模具的腔时，化合物对线跨度施加压力。此压力使跨度向一边偏斜，使其在远离浇口的方向上弯曲及倾斜。此干扰通常称为线摇摆。通常，通过分析从经模制封装的顶部及侧面照射的X射线图片来观察及测量线摇摆。在确定线摇摆的参数中有腔及浇口的设计；接合线的组成及直径、化合物的调配物、有效期及水分含量；及腔填充过程期间的化合物粘度。包含模制化合物调配物、芯片及引线框设计及过程条件(温度、压力、时间等)的规范陈述针对装置类型的最大允许线摇摆。举例来说，一个通用规则陈述在线摇摆之后，邻近线必须仍具有至少两个线直径的距离。另一规则基于所采用的线长度定义所允许线摇摆百分比。例如，所允许线摇摆可以为线长度的15％。背离这些规则被认为是装置失效；对于某些情况，其达到300到600ppm。
在线接合及模制操作之前，在将芯片附接到衬底的步骤中通常的做法是将一滴半流体的粘合剂树脂(环氧树脂)及催化剂的混合物放置在衬底上。所述树脂通常含有70％到80％的小直径(1到3μm)的无机填充物。通过将芯片按压在所述滴上，所述流体在芯片面积下扩散以形成围绕芯片周边具有弯形面的内圆填角层。然后使所述混合物聚合及硬化。
最近引入了粘合剂芯片附接膜，其可替代树脂点滴方法。所述膜商业上在商标NEX-130下由日本新日铁化工公司(Nippon Steel Chemical)提供。在从30到130μm的厚度范围中，所述膜包含30重量百分比的粘合剂环氧树脂及70重量百分比的硅石填充物。所述树脂粘度在高于30℃的温度下急剧下降且在从90到130℃的温度范围中具有粘度最小值；在高于150℃的温度下，所述树脂聚合(固化)。在层压过程(其中将膜施加到晶片)中，整个半导体晶片面向下靠在加热器级(80℃)上且经加热的滚轮将所述膜层压到晶片的背侧上。在切分经层压晶片之后，将经单个化的芯片粘合剂层朝下放置在衬底上。然后在150℃下固化所述树脂，之后是在180℃下的固化步骤。
发明内容
申请者认识到在用于半导体封装的转移模制操作期间由过度线摇摆造成的当今300到600ppm的失效率对于朝向更集成及小型半导体组件的当前市场趋势是不可接受的，由其当此失效率可因引入较薄的金线(受成本减少的驱动)而变得更糟时。另外，申请者注意到受精确工具及浇口更换驱动的获得及维护模具的高成本、模具维修的长维修时间及缓慢的模制及固化过程不与快速变动的客户市场所需的快速产品变化、迅速周转时间及生产率改善兼容。
申请者在其发现其可将用于附接芯片的粘合剂膜作为用于囊封芯片及线的层压技术应用时可解决所述线摇摆、模制成本及时间问题。所述方法使用环氧树脂型的部分固化(B阶)粘合剂树脂的薄板，所述树脂在加热到层压温度范围时进入低粘度；然后所述树脂具有与厚的膏一样的性质。在处于升高的温度下的囊封过程中，举例来说，通过滚压将所述薄片温和地沉积在经线接合半导体芯片上，从而致使实际上不存在对线的应力且因此不存在显而易见的线摇摆。另外，所述树脂可具有高含量的小的圆形硅石填充物，其使囊封剂的CTE朝向衬底及硅的CTE方向降低。
申请者证明此方法适于大规模成批处理，从而使其成为在不需要昂贵的模具及高成本的维护的情形下的低成本制作技术。在快速的周转时间中，囊封化合物及封装厚度可在运行间改变，给囊封技术带来迄今为止不可知的灵活性。进一步，完全固化的产品的测试结果指示在许多温度循环之后经囊封芯片没有显示显而易见的分层，且所述装置在水分及应力测试中具有良好的可靠性特性。
作为额外的优点，申请者发明用以协调用于芯片附接及芯片囊封步骤两者的沉积技术的方法，其包含当针对不同步骤使用不同化合物调配物时适用的化合物固化循环。
在实施例中，沉积低粘度树脂采用具有可移动且可加热的轮及加热器级的设备。提供带，其包含粘合剂聚合树脂层及惰性塑料化合物膜。将所述带缠绕在所述轮上以使得所述膜触及所述轮且所述层背对所述轮。将所述轮加热到高得足以将聚合树脂转变为低粘度状态的温度。将已组装有通过接合线连接到衬底的多个半导体芯片的衬底条带放置在也被加热到所述转变温度的操作台上。接着移动所述轮以将低粘度树脂滚压在所述芯片及线以及条带上，同时分离所述惰性膜。因此囊封所述芯片及线。
本发明消除常规模制技术的多个长期缺点是技术上的优点。由于所述方法允许不仅囊封衬底条带而且囊封整个衬底薄片，所以本发明适于高囊封生产率。由于低粘度膏状树脂的沉积在接合线上为温和的，所以本发明消除线摇摆。因为柔软的树脂填充芯片组合件的任何空间，所以本发明消除在传统模内流动中观察到的任何不完全填充及残存空气。而且，因为树脂是柔软的，本发明消除转移模制中由于高化合物压力所致的芯片裂纹。
附图说明
附图示意性图解说明通过轮的滚压方法来将低粘度粘合剂树脂层沉积在将半导体芯片连接到衬底的接合线上，借此囊封芯片及线的设备。芯片附接化合物在芯片外围形成弯月面。
具体实施方式
所述图以简化的方式描绘根据本发明的用于执行半导体装置的囊封方法的设备，其大体指示为100。将具有端子102的多个半导体芯片101组装在绝缘衬底条带110上。衬底110显示为条带；另一选择为，衬底可以为薄片，其上芯片布置成两维阵列。各种材料可用作衬底的基本材料。当需将总的装置厚度保持在低值时，衬底110可以为由聚酰亚胺化合物制成厚度范围在从约40到80μm之间的塑料薄片。另一选择为，衬底可以为由陶瓷或FR-4制成的稍微较厚的绝缘板。与衬底110形成整体的是导电迹线及通孔；衬底110进一步具有在其芯片附接表面上适合于金属线附接的金属接触垫111，及在其相对表面(图中未显示垫的表面)上适合于焊料附接的金属垫。
绝缘衬底110上的组合件包含用以将芯片101附接到衬底的粘合剂聚合化合物104。对粘合剂化合物的优选选择包含混合有催化剂的基于环氧树脂及基于聚酰亚胺的调配物(替代附接材料及工艺参见图2)。为改善粘合剂化合物的导热性，所述调配物包含50与80体积百分比之间的银填充物。
在图中，弯月面104a指示已通过将半流体化合物滴放置于衬底上附接芯片101；所述衬底保持在环境温度下。通过将芯片按压到所述滴上，所述流体在芯片面积下扩散以形成在芯片周边具有弯月面的内圆填角层。所述附接工艺通过将温度升高到约100℃以将溶剂驱逐出内圆填角层而继续；相依于所述芯片大小，此过程步骤可持续约10分钟到6小时之间。通过将温度进一步升高到约175到200℃且保持其达约30到60分钟，使聚合物通过交联而固化(聚合阶段)。
如所述图显示，芯片端子102通过接合线120连接到衬底接触垫111。优选的线金属为金或金合金；另一选择为，其可以为铜或铜合金。优选的接合技术是使用具有直径范围在15与33μm之间(优选地20到25μm之间)的线的接合机进行球形接合；对于功率装置来说，可使用具有约50μm的直径的较粗线。由从接合机毛细管伸出的某一长度的金线，形成具有从线直径的约1.2倍到1.6倍的优选直径的无空气球。在加热到150℃与270℃之间的温度的基架上，将无空气球放置于端子102上且按压在垫的镀敷金属上。将毛细管提高且使线朝向垫111移动，从而形成弓，其横跨端子102与垫111之间的间隙。所述线通过针脚式接合附接到垫111。接合机经控制来以至少两个线直径的最小距离以无干扰的有序方式放置邻近弓。
如所述图进一步显示，设备100包含平坦操作台130，可将具有所附接及线接合的芯片的衬底110放置于其上。可将操作台130加热到约300℃的温度；对于下文所描述的一些过程步骤来说，如果操作台130(连同衬底110一起)在箭头131所指示的方向上横向移动，可是进一步有帮助的。
对于根据本发明的方法，提供带，其包含粘合剂聚合树脂层140及惰性塑料化合物膜141。层140优选地具有在约300与900μm之间的厚度，且膜141优选地具有约25与40μm之间的厚度。层140的厚度取决于芯片的厚度(对于许多产品来说，在100与275μm之间)及接合线的弓高度。层140的树脂为混合有催化剂的环氧树脂调配物(所谓的B阶树脂)，其在某一温度范围内展示熔化及硬化(固化)的流变相。所述配置的带可(例如)从日本新日铁化工公司(Nippon Steel Chemical)购得。
在环境温度下，层140的树脂的粘度为高，举例来说，大约800kPa·s。随着温度增加，树脂跨越熔化相；树脂的粘度随着温度增加而降低以在约70℃下达到约8kPa·s且在约90℃下达到约800Pa·s。树脂在约90℃与130℃的温度之间保持低粘度。在低粘度下，树脂具有如膏一样的性质。在高于约130℃的温度下，所述粘度开始再次增加，因为树脂进入固化阶段。在约200℃下，树脂的粘度再次为约800kPa·s。
层140的环氧树脂进一步具有高体积(在约70％与80％之间)的硅石填充物以将纯净环氧树脂的CTE(约70ppm)降低到约10ppm的CTE。层140是电绝缘的。此外，层140的环氧树脂展示到半导体装置中频繁使用的衬底材料的强粘合力，例如聚酰亚胺、FR-4、引线框及焊料遮罩。在剪切测试中，粘合剂强度经测量在25与40N·mm-2之间。
在囊封方法中，将层140加热到树脂的低粘度状态且层压在接合线及芯片上。对于少数目的芯片来说，可手动执行层压过程。优选的层压方法使用图中所描绘的设备100。在所述设备中，将衬底110与附接到所述衬底的芯片101及通过接合线120电连接到衬底垫111的芯片端子102一起放置在可加热操作台130上。如图中所显示，接合线120背对衬底110。
设备100包含可加热轮150，其可围绕其轴旋转(如图中的箭头151所指示)且进一步可在x、y及z方向上移动。接下来，提供包含粘合剂树脂层140及惰性膜141的层压带。围绕轮150放置所述带的一部分以使得惰性膜141接触所述轮且树脂层140背对所述轮。在下一步骤中，将轮150及操作台130加热到适合于使层140的聚合树脂转换为低粘度状态的温度。如上文所提及，优选的温度范围在约70到130℃之间，且更优选的温度范围在约80到90℃之间。在衬底条带110的一个端上移动具有所述带的轮150以使得聚合层140面对经线接合的芯片的线弓。
降低具有所述带的轮150直到低粘度树脂140接触第一芯片的线为止。然后进一步温和地降低所述轮直到树脂140在几乎没有对线接合的干扰的情形下将芯片及线完全浸没在膏状树脂中为止。线上的压力为约0.2MPa。然后沿条带向前滚动轮以将邻近线及芯片浸没在树脂140中，与此同时使膜141与所沉积的树脂140分离(见图中的部分141a)。所述线上的压力保持为约0.2MPa。轮横向移动(X方向)的优选速度在约40与100mm/s之间。以此方式，囊封经组装的多个芯片的芯片及线且暴露所沉积的树脂的平坦表面140a。如果需要，还可在箭头131所指示的方向上移动操作台131。
经验表明使用层140的膏状树脂的滚压层压方法在不存在残存空隙及偏斜线的情形下囊封芯片及线。所述过程甚至在具有多个所组装的芯片的延伸的衬底薄片以成批囊封处理时也不呈现可观察到的线摇摆及线干扰。
在下一过程步骤中，通过使分子交联来硬化(固化)聚合树脂。此步骤优选地以两个阶段来执行；在第一阶段中，操作台130的温度升高到150到160℃的范围；此聚合阶段持续约1个小时。当温度上升到约180℃时，可缩短所述时间到约10分钟。此后，在第二阶段中，从操作台130移除具有经囊封的芯片的衬底且将其送到炉中，在此处可在180℃下在约1个小时内完全固化(硬化)树脂。因此，用于所述两步骤固化阶段的总时间为2个小时或更少，这是相对于常规转移模制方法中用于固化模制化合物所需的6到7个小时的显著改善。
然后，将具有处于经硬化囊封中的多个线接合芯片的衬底条带递送到装置单个化步骤，其优选地通过锯切执行。在所述锯切过程之后，所述离散装置处于硬封装中，其在封装侧处具有由切割锯造成的锯切标记。所述封装侧没有伸出物。
本发明的囊封方法可与不同于所述图中用于芯片的芯片附接过程的芯片附接过程协作。优选的方法将附接化合物作为带沉积到整个半导体晶片上。所述带具有其厚度在从30到130μm的范围中的粘合剂膜及30重量百分比环氧树脂及70重量百分比硅石填充物的组成(与充满银的芯片附接材料104不同)。所述膜受惰性覆盖膜保护。此类带商业上在商标NEX-130下由日本新日铁化工公司(Nippon Steel Chemical)提供。在于晶片上的沉积期间，环氧树脂膜具有低粘度，因为其处于约90到130℃的温度下。在沉积之后，将晶片放置于切分带上且通过锯单个化为具有所附接的粘合剂膜的离散芯片。由于锯切过程，附接化合物具有与芯片边缘成笔直轮廓的边缘。
从切分带，一个一个地提高经单个化的芯片，且将其放置于其所附接的衬底110。然后，使衬底与所附接的芯片一起达到针对环氧树脂固化的第一阶段的约150与160℃之间的温度(大约一个小时)。此后，芯片附接层稳定得足以允许如以上所述的线接合过程步骤。与上文所述的层140的聚合树脂的固化同时执行用于完成环氧树脂固化的第二阶段。
本发明适用于任何类型的半导体芯片、离散或集成电路且所述半导体芯片的材料可包含硅、硅锗、砷化镓或集成电路制作中所使用的任何其它半导体或化合物材料。
本发明还适用于制造成本是首要关心问题的装置。成本敏感的产品的实例是智能卡模块；其需要通过低成本批量处理来制作。这些产品中的一些产品可具有额外的优先考虑事项，例如产品的薄性或对市场需要的迅速反应的灵活性。可通过本发明的方法同时满足这些所关心问题。
在一般实施例中，提供一种用于囊封集成电路芯片或类似微电子装置的方法，其中相对于连续长度的树脂材料移动一连串连续芯片以使所述树脂材料的相继经加热部分与所述芯片的相继者紧密接近，从而使树脂材料的经加热部分流动来囊封所述芯片。所述长度的树脂材料可有利地提供于一长度的膜上，所述膜充当载体；所述芯片可提供于传送带上；且可使所述膜及传送带相对于彼此在相反方向上移动；其中使所述树脂材料远离膜流动且流动到芯片上。可在流动的树脂材料流动到芯片上之后使其固化，且将经囊封的芯片单个化成离散的经囊封组件。
用于囊封集成电路芯片或类似微电子装置的设备可包括第一传送带、第二传送带、加热器及用于使所述第一及第二传送带相对于彼此移动的机构。所述设备可经尺寸设定、配置及调适以使所述第一传送带上的连续长度的树脂材料的相继经加热部分与所述第二传送带上的一连串芯片中的相应者紧密接近，从而使经加热部分流动来囊封所述芯片。
本发明所涉及的所属领域的技术人员将了解在所主张的本发明的范围内可存在许多变化形式及实施例。

Claims (4)

1.一种用于制造半导体装置的方法，其包括如下步骤：
将具有通过接合线连接到衬底的多个半导体芯片的衬底条带放置在可加热操作台上以使得所述线背对所述衬底；
围绕可加热轮放置包含粘合剂聚合树脂层及惰性塑料化合物膜的带以使得所述层背对所述轮；
将所述轮及所述衬底加热到适合于将所述聚合树脂转换为低粘度状态的温度；及
相对于所述条带滚动所述轮以将低粘度的所述树脂沉积在所述芯片及线上，借此囊封所述芯片及线。
2.如权利要求1所述的方法，其进一步包含与沉积所述树脂同时地分离所述惰性塑料化合物膜的步骤。
3.如权利要求2所述的方法，其进一步包含如下步骤：
硬化所述树脂；及
将所述衬底条带单个化为离散的经囊封装置。
4.如权利要求3所述的方法，其中通过锯切执行所述单个化步骤。
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