CN101914752B - 金属膜的薄膜沉积方法和薄膜沉积装置 - Google Patents

金属膜的薄膜沉积方法和薄膜沉积装置 Download PDF

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Publication number
CN101914752B
CN101914752B CN2010102440281A CN201010244028A CN101914752B CN 101914752 B CN101914752 B CN 101914752B CN 2010102440281 A CN2010102440281 A CN 2010102440281A CN 201010244028 A CN201010244028 A CN 201010244028A CN 101914752 B CN101914752 B CN 101914752B
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China
Prior art keywords
recess
processed
film deposition
membrane
electric power
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Expired - Fee Related
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CN2010102440281A
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English (en)
Chinese (zh)
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CN101914752A (zh
Inventor
池田太郎
水泽宁
波多野达夫
横山敦
佐久间隆
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04—Coating on selected surface areas, e.g. using masks
    • C23C14/046—Coating cavities or hollow spaces, e.g. interior of tubes; Infiltration of porous substrates
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3435—Applying energy to the substrate during sputtering
    • C23C14/345—Applying energy to the substrate during sputtering using substrate bias
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3471—Introduction of auxiliary energy into the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/42—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials using a gas or vapour
    • H10P14/44—Physical vapour deposition [PVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/032—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers
    • H10W20/033—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers in openings in dielectrics
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/032—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers
    • H10W20/033—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers in openings in dielectrics
    • H10W20/034—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers in openings in dielectrics bottomless barrier, adhesion or liner layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H10W20/081—Manufacture or treatment of dielectric parts thereof by forming openings in the dielectric parts
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H10W20/081—Manufacture or treatment of dielectric parts thereof by forming openings in the dielectric parts
    • H10W20/083—Manufacture or treatment of dielectric parts thereof by forming openings in the dielectric parts the openings being via holes penetrating underlying conductors

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Physical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
CN2010102440281A 2005-06-28 2006-06-28 金属膜的薄膜沉积方法和薄膜沉积装置 Expired - Fee Related CN101914752B (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2005-188107 2005-06-28
JP2005188107 2005-06-28
JP2005277044A JP4830421B2 (ja) 2005-06-28 2005-09-26 金属膜の成膜方法及び成膜装置
JP2005-277044 2005-09-26

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
CN2006800235759A Division CN101213642B (zh) 2005-06-28 2006-06-28 金属膜的薄膜沉积方法和薄膜沉积装置

Publications (2)

Publication Number Publication Date
CN101914752A CN101914752A (zh) 2010-12-15
CN101914752B true CN101914752B (zh) 2012-07-04

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ID=37595271

Family Applications (2)

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CN2010102440281A Expired - Fee Related CN101914752B (zh) 2005-06-28 2006-06-28 金属膜的薄膜沉积方法和薄膜沉积装置
CN2006800235759A Withdrawn - After Issue CN101213642B (zh) 2005-06-28 2006-06-28 金属膜的薄膜沉积方法和薄膜沉积装置

Family Applications After (1)

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CN2006800235759A Withdrawn - After Issue CN101213642B (zh) 2005-06-28 2006-06-28 金属膜的薄膜沉积方法和薄膜沉积装置

Country Status (6)

Country Link
US (1) US8029873B2 (https=)
JP (1) JP4830421B2 (https=)
KR (1) KR101291917B1 (https=)
CN (2) CN101914752B (https=)
TW (1) TWI430369B (https=)
WO (1) WO2007001022A1 (https=)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5194549B2 (ja) 2007-04-27 2013-05-08 富士通セミコンダクター株式会社 半導体装置の製造方法
TWI419280B (zh) * 2009-01-16 2013-12-11 國立臺灣大學 防止金屬遷移的電子封裝件
JP5025679B2 (ja) * 2009-03-27 2012-09-12 株式会社東芝 半導体装置
JP2011119330A (ja) * 2009-12-01 2011-06-16 Renesas Electronics Corp 半導体集積回路装置の製造方法
US8847321B2 (en) 2010-03-05 2014-09-30 Taiwan Semiconductor Manufacturing Co., Ltd. Cascode CMOS structure
US8252680B2 (en) * 2010-09-24 2012-08-28 Intel Corporation Methods and architectures for bottomless interconnect vias
US9125333B2 (en) * 2011-07-15 2015-09-01 Tessera, Inc. Electrical barrier layers
JP5569561B2 (ja) * 2012-06-18 2014-08-13 富士通セミコンダクター株式会社 半導体装置の製造方法
CN103489900B (zh) * 2013-09-04 2016-05-04 京东方科技集团股份有限公司 一种阻挡层及其制备方法、薄膜晶体管、阵列基板
JP5817856B2 (ja) * 2014-01-27 2015-11-18 富士通セミコンダクター株式会社 半導体装置
JP6282474B2 (ja) 2014-01-31 2018-02-21 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
US9795038B2 (en) * 2014-09-25 2017-10-17 Intel Corporation Electronic package design that facilitates shipping the electronic package
JP6472551B2 (ja) * 2018-01-24 2019-02-20 ルネサスエレクトロニクス株式会社 半導体装置
JP6640391B2 (ja) * 2019-01-22 2020-02-05 ルネサスエレクトロニクス株式会社 半導体装置
CN109652761B (zh) * 2019-01-30 2021-01-26 惠科股份有限公司 镀膜方法及镀膜装置
FI129628B (en) * 2019-09-25 2022-05-31 Beneq Oy Method and apparatus for processing surface of a substrate

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5968327A (en) * 1997-04-14 1999-10-19 Anelva Corporation Ionizing sputter device using a coil shield
CN1412845A (zh) * 2001-10-19 2003-04-23 日本电气株式会社 半导体器件及其制造方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5935334A (en) * 1996-11-13 1999-08-10 Applied Materials, Inc. Substrate processing apparatus with bottom-mounted remote plasma system
JP2000077365A (ja) 1998-08-29 2000-03-14 Tokyo Electron Ltd 研磨スラリー及び研磨方法
JP4242136B2 (ja) * 2002-10-31 2009-03-18 富士通マイクロエレクトロニクス株式会社 配線構造の形成方法
US6949461B2 (en) * 2002-12-11 2005-09-27 International Business Machines Corporation Method for depositing a metal layer on a semiconductor interconnect structure

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5968327A (en) * 1997-04-14 1999-10-19 Anelva Corporation Ionizing sputter device using a coil shield
CN1412845A (zh) * 2001-10-19 2003-04-23 日本电气株式会社 半导体器件及其制造方法

Also Published As

Publication number Publication date
JP2007043038A (ja) 2007-02-15
JP4830421B2 (ja) 2011-12-07
CN101914752A (zh) 2010-12-15
TWI430369B (zh) 2014-03-11
US20090227104A1 (en) 2009-09-10
US8029873B2 (en) 2011-10-04
TW200715412A (en) 2007-04-16
KR20080022221A (ko) 2008-03-10
CN101213642B (zh) 2010-09-29
CN101213642A (zh) 2008-07-02
WO2007001022A1 (ja) 2007-01-04
KR101291917B1 (ko) 2013-07-31

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