CN101911320B - 具有光引导装置的光电器件以及形成该装置的方法 - Google Patents

具有光引导装置的光电器件以及形成该装置的方法 Download PDF

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Publication number
CN101911320B
CN101911320B CN2008801235261A CN200880123526A CN101911320B CN 101911320 B CN101911320 B CN 101911320B CN 2008801235261 A CN2008801235261 A CN 2008801235261A CN 200880123526 A CN200880123526 A CN 200880123526A CN 101911320 B CN101911320 B CN 101911320B
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CN
China
Prior art keywords
light
edge
light reflecting
material layer
reflecting material
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Expired - Fee Related
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CN2008801235261A
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English (en)
Chinese (zh)
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CN101911320A (zh
Inventor
M·杜普利西斯
R·F·格雷维恩斯坦
A·W·包格奇
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Insiava Pty Ltd
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Insiava Pty Ltd
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/855—Optical field-shaping means, e.g. lenses
    • H10H20/856—Reflecting means
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24—Coupling light guides
    • G02B6/42—Coupling light guides with opto-electronic elements
    • G02B6/4201—Packages, e.g. shape, construction, internal or external details
    • G02B6/4204—Packages, e.g. shape, construction, internal or external details the coupling comprising intermediate optical elements, e.g. lenses, holograms
    • G02B6/4214—Packages, e.g. shape, construction, internal or external details the coupling comprising intermediate optical elements, e.g. lenses, holograms the intermediate optical element having redirecting reflective means, e.g. mirrors, prisms for deflecting the radiation from horizontal to down- or upward direction toward a device
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/121—The active layers comprising only Group IV materials
    • H10F71/1215—The active layers comprising only Group IV materials comprising at least two Group IV elements, e.g. SiGe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/40—Optical elements or arrangements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/40—Optical elements or arrangements
    • H10F77/407—Optical elements or arrangements indirectly associated with the devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
    • H10H20/841—Reflective coatings, e.g. dielectric Bragg reflectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H10F77/122—Active materials comprising only Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/826—Materials of the light-emitting regions comprising only Group IV materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Led Devices (AREA)
  • Light Receiving Elements (AREA)
  • Optical Couplings Of Light Guides (AREA)
CN2008801235261A 2007-11-01 2008-10-31 具有光引导装置的光电器件以及形成该装置的方法 Expired - Fee Related CN101911320B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
ZA200709436 2007-11-01
ZA2007/09436 2007-11-01
PCT/IB2008/054534 WO2009057075A2 (en) 2007-11-01 2008-10-31 Optoelectronic device with light directing arrangement and method of forming the arrangement

Publications (2)

Publication Number Publication Date
CN101911320A CN101911320A (zh) 2010-12-08
CN101911320B true CN101911320B (zh) 2012-11-21

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CN2008801235261A Expired - Fee Related CN101911320B (zh) 2007-11-01 2008-10-31 具有光引导装置的光电器件以及形成该装置的方法

Country Status (7)

Country Link
US (2) US8729582B2 (enExample)
EP (1) EP2218113B1 (enExample)
JP (1) JP5550558B2 (enExample)
CN (1) CN101911320B (enExample)
TW (1) TWI467789B (enExample)
WO (1) WO2009057075A2 (enExample)
ZA (1) ZA201002944B (enExample)

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WO2009095886A2 (en) * 2008-02-01 2009-08-06 Insiava (Pty) Limited Semiconductor light emitting device comprising heterojunction
US8237832B2 (en) * 2008-05-30 2012-08-07 Omnivision Technologies, Inc. Image sensor with focusing interconnections
CN102292834A (zh) 2008-12-15 2011-12-21 因西亚瓦(控股)有限公司 利用穿通效应的硅发光器件
JP6008742B2 (ja) 2010-01-22 2016-10-19 インシアヴァ （ピーテーワイ） リミテッド シリコン発光デバイス及び該デバイスを製造する方法
US9515227B2 (en) 2011-09-16 2016-12-06 Insiava (Pty) Limited Near infrared light source in bulk silicon
DE102012107794B4 (de) 2012-08-23 2023-10-19 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronische Vorrichtung
EP3045896B1 (en) 2015-01-16 2023-06-07 Personal Genomics, Inc. Optical sensor with light-guiding feature
KR102385941B1 (ko) * 2015-06-15 2022-04-13 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 발광 소자 패키지
KR20210023459A (ko) * 2019-08-23 2021-03-04 에스케이하이닉스 주식회사 이미지 센싱 장치

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Also Published As

Publication number Publication date
US8729582B2 (en) 2014-05-20
US8969112B2 (en) 2015-03-03
EP2218113A2 (en) 2010-08-18
ZA201002944B (en) 2010-12-29
JP2011503842A (ja) 2011-01-27
WO2009057075A2 (en) 2009-05-07
JP5550558B2 (ja) 2014-07-16
EP2218113B1 (en) 2016-04-27
TWI467789B (zh) 2015-01-01
TW200943569A (en) 2009-10-16
US20110042701A1 (en) 2011-02-24
CN101911320A (zh) 2010-12-08
WO2009057075A3 (en) 2010-03-18
US20140248728A1 (en) 2014-09-04

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Granted publication date: 20121121