CN101888218B - Simulated reflection type I-Q vector modulation circuit based on GaAs (Generally accepted Auditing standards) HBT (Heterojunction Bipolar Transistor) device - Google Patents
Simulated reflection type I-Q vector modulation circuit based on GaAs (Generally accepted Auditing standards) HBT (Heterojunction Bipolar Transistor) device Download PDFInfo
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Abstract
The invention discloses a simulated reflection type I-Q vector modulation circuit based on a GaAs (Generally accepted Auditing standards) HBT (Heterojunction Bipolar Transistor) device, mainly solving the problems of large chip-occupied area ratio and high cost of the traditional modulation circuit and comprising a 3-dB Lange coupler (1), two simulated reflection type attenuators (6, 7) and a 3-dB Wilkinson power combiner (10), wherein the straight-through port of the 3-dB Lange coupler is outputted to one input end of the power combiner (10) after directly subjected to phase shift by the first attenuator (6), and the coupling port of the 3-dB Lange coupler is outputted to the other input end of the power combiner (10) after directly subjected to phase shift by the second attenuator (7), wherein the collector electrodes of a gallium arsenide hetero-junction bipolar transistor of each simulated reflection type attenuator are respectively connected with resistors R3 and R4 in parallel for reducing a reflection factor gamma when Vb is equal to 0, and the transmission electrodes of the gallium arsenide hetero-junction bipolar transistors are respectively connected with inductors L1 and L2 in series for offsetting a parasitic effect generated by the HNT device. The invention can be used for generating I-Q modulation signals or carrying out frequency conversion.
Description
Technical field
The invention belongs to technical field of integrated circuits, particularly a kind of reflection-type I-Q Vector Modulation circuit is used for digital communication, produces the I-Q modulation signal or carries out frequency inverted.
Background technology
Say traditionally, in microwave and Millimeter Wave Applications, vector modulator mainly contains two kinds of implementation structures.The first is to utilize two quadrature biphase modulators to form by the 3-dB power combiner; The second is to utilize a variable attenuator and 360 ° of variable phase-shifter to form.Although in the second structure, insertion loss is very little, need attenuator to have fixing phase place and phase-shifter that fixing insertion loss is arranged, this is so that circuit design difficulty very.Therefore, in microwave and Millimeter Wave Applications, the first structure that is comprised of the variable simulated reflections type of two-phase attenuator often is widely used.
The variable simulated reflections type of two-phase attenuator application is at first proposed by Devlin and Minnis in vector modulator.The reflection-type attenuator is comprised of Lange coupler and two the cold mould devices as quadrature hybrid, and cold mould device adopts high electron mobility transistor (HEMT) or heterojunction bipolar transistor HBT.The bias voltage that adopts cold mould HEMT device to bear is realized modulation function, and adopts cold mould HBT only to need positive bias just can realize.Cold mould HBT device has larger parasitic parameter, can eliminate error by the caused amplitude of ghost effect and phase place by balance or push-pull circuit structure.This structure can realize preferably symmetric constellation figure, but chip occupying area is larger, and cost compare is high.
Summary of the invention
The object of the invention is to overcome the deficiency of above-mentioned vector modulator, a kind of simulated reflections type I-Q Vector Modulation circuit based on the GaAsHBT device is provided, to reduce chip area footprints and power consumption, improve chip performance.
Technical scheme of the present invention is achieved in that
1. know-why
Mainly determined by the reflection coefficient Γ of the collector electrode of the variable resistor terminal GaAs HBT of attenuator based on the insertion loss of the simulated reflections type I-Q Vector Modulation circuit of GaAs HBT device, require the amplitude of reflection coefficient Γ when Vb=0 and Vb=Von two states to equate, phase difference is 180 °.When Vb=0, the impedance of variable resistor terminal GaAs HBT is far longer than 50 Ω, and reflection coefficient was very large when signal was transferred to variable resistor terminal GaAs HBT like this; When Vb=Von, owing to having dead resistance in the GaAs HBT device, the impedance of variable resistor terminal GaAs HBT reduces less than desirable state, so that signal is little during reeflectance ratio Vb=0 when being transferred to variable resistor terminal GaAs HBT.By the reflection coefficient when GaAs HBT collector electrode suitable resistance in parallel can suitably reduce Vb=0 | Γ |, so that the amplitude of reflection coefficient Γ when Vb=0 and Vb=Von two states of the collector electrode of the variable resistor terminal GaAs HBT of reflection-type attenuator equates.Because the ghost effect that base stage, collector electrode and the emitter parasitic capacitance each other of GaAs HBT device causes, so reflection coefficient Γ when Vb=0 and Vb=Von two states phase difference away from 180 °, by offsetting this ghost effect at inductance of GaAs HBT emitter series connection, so that the phase difference of reflection coefficient Γ when Vb=0 and Vb=Von two states of the collector electrode of the variable resistor terminal GaAs HBT of reflection-type attenuator is 180 °
2. modulation circuit structure
Of the present invention at modulation circuit, comprise: a 3-dB lange coupler, two simulated reflections type attenuators, with 1 3-dB wilkinson power combiner, the output of the straight-through port of this 3-dB lange coupler is directly by outputing to an input of power combiner after the first attenuator phase shift; The coupling port of this 3-dB lange coupler is exported from output after power combiner is synthetic to two signals of input directly by outputing to another input of power combiner after the second attenuator phase shift.
Described simulated reflections type attenuator, comprise a 3-dB lange coupler, two gallium arsenide hbt having Q1 and Q2, and two resistance R 3 and R4, the input port of this 3-dB lange coupler is as the input port of attenuator, and isolated port is as the output port of attenuator; The straight-through port of this 3-dB lange coupler links to each other with the collector electrode of Q1 and Q2 respectively with coupling port; The base stage of Q1 and Q2 links to each other with R3, R4 respectively, and the other end of resistance R 3 and R4 links together as the control port Vb of attenuator; Wherein the collector electrode of Q1 and Q2 is connected in parallel to respectively resistance R 1 and R2, the reflection coefficient when reducing Vb=0 | Γ |; The emitter of Q1 and Q2 is connected in series with respectively inductance L 1 and L2, in order to offset because the ghost effect that base stage, collector electrode and the emitter parasitic capacitance each other of HBT device causes.
The present invention has following advantage:
(1) modulation circuit of the present invention only adopts two simulated reflections type attenuators, directly be connected to straight-through port and the coupling port of 3-dBlange coupler, and directly synthesize by 3-dB wilkinson power combiner, modulation circuit with respect in the past balance or push-pull circuit structure adopts four simulated reflections type attenuators and additional four couplers to come practical function, under the prerequisite that does not affect circuit function, save a large amount of chip areas, thereby saved cost of manufacture.
(2) the present invention is because at the collector electrode of GaAs HBT device Q1 and Q2 resistance R 1 and the R2 that resistance equates that has been connected in parallel respectively, so that the reflection coefficient during Vb=0 | Γ | reduce, thereby the amplitude of reflection coefficient Γ when Vb=0 and Vb=Von two states of collector electrode of the variable resistor terminal GaAs HBT of reflection-type attenuator equated, reduced the insertion loss of integrated circuit.
(3) the present invention is owing to the emitter at GaAs HBT device Q1 and Q2 has been connected in series respectively inductance L 1 and a L2 that inductance value equates, thereby offset because the ghost effect that base stage, collector electrode and the emitter parasitic capacitance each other of GaAs HBT device causes, so that the phase difference of reflection coefficient Γ when Vb=0 and Vb=Von two states of the collector electrode of the variable resistor terminal GaAs HBT of reflection-type attenuator is 180 °, when reducing the insertion loss of integrated circuit, improved the accuracy of phase-modulation.
Description of drawings
Fig. 1 is existing simulated reflections type I-Q Vector Modulation circuit diagram based on GaAs HBT device;
Fig. 2 is existing simulated reflections type attenuator circuit figure;
Fig. 3 is the simulated reflections type I-Q Vector Modulation circuit diagram that the present invention is based on GaAs HBT device;
Fig. 4 is the simulated reflections type attenuator circuit figure among the present invention;
Fig. 5 is ratio and the phase difference of the reflection coefficient amplitude of simulated reflections type attenuator of the present invention when Vb=0 and Vb=Von two states.
Embodiment
With reference to Fig. 1, existing simulated reflections type I-Q Vector Modulation circuit diagram based on GaAs HBT device, comprise five 3-dB lange couplers 1,2,3,4,5, four simulated reflections type attenuators 6,7,8,9, with a 3-dB wilkinson power combiner 10, this 3-dB lange coupler has four ports, is respectively input port, isolated port, straight-through port and coupling port, signal is inputted from input port, from the output of straight-through port and coupling port respectively with the input signal signal of 0 ° of phasic difference and 90 ° mutually.The input port of the one 3-dB lange coupler 1 is as the input of modulation circuit, and straight-through port and coupling port respectively connect the 2nd 3-dB lange coupler 2, and the input port of the 3rd 3-dB lange coupler 3; The coupling port of the 2nd 3-dB lange coupler 2 and straight-through port connect respectively the input of the first simulated reflections type attenuator 6 and the second simulated reflections type attenuator 7; This first simulated reflections type attenuator 6 be connected the output of simulated reflections type attenuator 7 and connect respectively coupling port and the straight-through port of the 4th 3-dB lange coupler 4; The first simulated reflections type attenuator 6 control port VI and the second simulated reflections type attenuator 7 control ports
The control signal high-low level opposite, as two control ends of modulation circuit; The coupling port of the 3rd 3-dB lange coupler 3 and straight-through port connect respectively the input of the 3rd simulated reflections type attenuator 8 and the 4th simulated reflections type attenuator 9; The 3rd simulated reflections type attenuator 8 and the output of the 4th simulated reflections type attenuator 9 connect respectively coupling port and the straight-through port of the 5th 3-dB lange coupler 5; The first simulated reflections type attenuator 8 control port VQ and the second simulated reflections type attenuator 9 control ports
The control signal high-low level opposite, as two other control end of modulation circuit; This 3-dB lange coupler 1,2,3,4,5 isolated port are connected the resistance of 50 Ω with the ground among; The input port of the 4th 3-dB lange coupler 4 connects an input port of 3-dB wilkinson power combiner 10; The input port of the 5th 3-dB lange coupler 5 connects another input port of 3-dB wilkinson power combiner 10; The output port of this 3-dB wilkinson power combiner 10 is as the output of modulation circuit.
With reference to Fig. 2, existing simulated reflections type attenuator circuit figure, comprise a 3-dB lange coupler, two gallium arsenide hbt having Q1 and Q2, and two resistance R 1 and R2, the input port of this 3-dB lange coupler is as the input port of attenuator, and isolated port is as the output port of attenuator; The straight-through port output of this 3-dB lange coupler links to each other with the signal of 0 ° of input signal phase phasic difference and with the Q1 collector electrode, and coupling port output links to each other with the signal of 90 ° of input signal phase phasic differences and with the collector electrode of Q2; The base stage of Q1 and Q2 links to each other with R1, R2 respectively, and the other end of resistance R 1 and R2 links together as the control port Vb of attenuator.
With reference to Fig. 3, the present invention is based on the simulated reflections type I-Q Vector Modulation circuit of GaAs HBT device, mainly by 1,1 3-dB wilkinson of 3-dB lange coupler power combiner 10, and two simulated reflections type attenuators 6 and 7 form.The straight-through port output of this 3-dB lange coupler and the signal of 0 ° of input signal phase phasic difference, and directly by outputing to an input of power combiner 10 after 6 phase shifts of the first attenuator; The coupling port output of this 3-dB lange coupler and the signal of 90 ° of input signal phase phasic differences, and directly by outputing to another input of power combiner 10 after 7 phase shifts of the second attenuator, output after 10 pairs of these two input signals of power combiner are synthetic; The first simulated reflections type attenuator 6 control port VI and the second simulated reflections type attenuator 7 control port VQ are as two control ends of modulation circuit.
With reference to Fig. 4, the simulated reflections type attenuator among the present invention comprises a 3-dB lange coupler, two gallium arsenide hbt having Q1 and Q2, four resistance R 1, R2, R3 and R4, and two inductance L 1 and L2, wherein, the resistance of resistance R 3 and R4 equates, and is 140 ± 1 Ω; The inductance value of inductance L 1 and L2 equates, and is 43 ± 1pH.The input port of this 3-dB lange coupler is as the input port of attenuator, and isolated port is as the output port of attenuator; The straight-through port of this 3-dB lange coupler links to each other with the collector electrode of Q1 and Q2 respectively with coupling port; The collector electrode of Q1 and Q2 is connected in parallel with resistance R 3 and R4 respectively, the reflection coefficient when reducing Vb=0 | Γ |; The base stage of Q1 and Q2 links to each other with R1, R2 respectively, and the other end of resistance R 1 and R2 links together as the control port Vb of attenuator; The emitter of Q1 and Q2 is connected in series with inductance L 1 and L2 respectively, in order to offset because the ghost effect that base stage, collector electrode and the emitter parasitic capacitance each other of HBT device causes.The signal phase difference of output port output was 180 ° when the signal of output port output and Vb equaled high level Von when control port Vb equals low level 0.
Ratio and phase difference simulation result to the reflection coefficient amplitude of simulated reflections type attenuator of the present invention when Vb=0 and the Vb=Von two states, as shown in Figure 5, wherein Fig. 5 (a) is the ratio of the reflection coefficient amplitude of simulated reflections type attenuator when Vb=0 and Vb=Von two states, and Fig. 5 (b) is that the reflection coefficient phase of simulated reflections type attenuator when Vb=0 and Vb=Von two states is poor.As seen from Figure 5, simulated reflections type attenuator of the present invention, when signal frequency was 30GHz, the ratio of the amplitude of the reflection coefficient Γ of the collector electrode of variable resistor terminal GaAs HBT when Vb=0 and Vb=Von two states was 1, phase difference is 180 °.Illustrate that the reflection coefficient Γ of collector electrode of the variable resistor terminal GaAs HBT of simulated reflections type attenuator of the present invention has reached the requirement of simulated reflections type I-Q Vector Modulation circuit, has reduced insertion loss in practical function.
Claims (4)
1. simulated reflections type I-Q Vector Modulation circuit based on GaAs HBT device, it is characterized in that comprising: a 3-dB lange coupler (1), two simulated reflections type attenuators, i.e. the first simulated reflections type attenuator (6), the second simulated reflections type attenuator (7) and 1 3-dBwilkinson power combiner (10), the straight-through port output of this 3-dB lange coupler (1) is directly by outputing to an input of 3-dB wilkinson power combiner (10) after the first simulated reflections type attenuator (6) phase shift; The coupling port output of this 3-dB lange coupler (1) is exported after 3-dB wilkinson power combiner (10) is synthetic to these two input signals directly by outputing to another input of 3-dB wilkinson power combiner (10) after the second simulated reflections type attenuator (7) phase shift.
2. simulated reflections type I-Q Vector Modulation circuit according to claim 1, it is characterized in that each simulated reflections type attenuator, comprise a 3-dB lange coupler, two gallium arsenide hbt having Q1 and Q2, four resistance R 1, R2, R3 and R4, and two inductance L 1 and L2, the input port of this 3-dB lange coupler is as the input port of simulated reflections type attenuator, and isolated port is as the output port of simulated reflections type attenuator; The straight-through port of this 3-dBlange coupler links to each other with the collector electrode of Q1 and Q2 respectively with coupling port; The collector electrode of Q1 and Q2 is connected in parallel with resistance R 3 and R4 respectively, the reflection coefficient when reducing Vb=0 | Γ |; The base stage of Q1 and Q2 links to each other with R1, R2 respectively, and the other end of resistance R 1 and R2 links together as the control port Vb of simulated reflections type attenuator; The emitter of Q1 and Q2 is connected in series with inductance L 1 and L2 respectively, in order to offset because the ghost effect that base stage, collector electrode and the emitter parasitic capacitance each other of HBT device causes.
3. the simulated reflections type I-Q Vector Modulation circuit based on GaAs HBT device according to claim 2 is characterized in that the resistance of resistance R 3 and R4 equates, and is 140 ± 1 Ω.
4. the simulated reflections type I-Q Vector Modulation circuit based on GaAs HBT device according to claim 2 is characterized in that the inductance value of inductance L 1 and L2 equates, and is 43 ± 1pH.
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| CN103217638A (en) * | 2013-05-05 | 2013-07-24 | 西安电子科技大学 | Method for testing performance of GaAs HBT component after gamma irradiation |
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| CN110035026B (en) * | 2019-04-10 | 2022-06-10 | 中国电子科技集团公司第十三研究所 | Microwave QPSK modulation circuit and electronic equipment |
| CN110474610A (en) * | 2019-07-04 | 2019-11-19 | 中国科学院上海微系统与信息技术研究所 | A kind of vector modulator |
| CN113589233A (en) * | 2021-07-21 | 2021-11-02 | 东南大学 | S-band high-power double-balanced vector modulator based on PIN diode and control method thereof |
| CN114843781B (en) * | 2022-04-18 | 2023-04-28 | 电子科技大学长三角研究院(湖州) | Terahertz vector modulator based on gallium arsenide diode |
| CN116488983B (en) * | 2023-04-25 | 2024-07-16 | 博瑞集信(西安)电子科技股份有限公司 | I-Q vector modulator and radio frequency signal modulation method applied by same |
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