CN2468247Y - Multiplex sound interval gallium arsenide (GaAS) microwave single-chip integrated vector modulator - Google Patents
Multiplex sound interval gallium arsenide (GaAS) microwave single-chip integrated vector modulator Download PDFInfo
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- CN2468247Y CN2468247Y CN01217570U CN01217570U CN2468247Y CN 2468247 Y CN2468247 Y CN 2468247Y CN 01217570 U CN01217570 U CN 01217570U CN 01217570 U CN01217570 U CN 01217570U CN 2468247 Y CN2468247 Y CN 2468247Y
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Abstract
The utility model relates to a multi-octave gallium arsenide (GaAS) microwave single-chip integrated vector modulator which is mainly used as electronic components with continuously adjustable phase and amplitude in electronic systems and equipment, such as mobile communication, radar, electronic countermeasure, instruments, etc. The multi-octave gallium arsenide (GaAS) microwave single-chip integrated vector modulator comprises a 180 DEG switch type digital phase shift circuit, a 180 DEG reflection type analog phase shift circuit, and a low phase shift amplitude adjusting circuit which are connected in series, wherein P1 is a signal input terminal, P2 is a signal output terminal. The phase shift circuits are connected with complementary control terminals (K1, K2, K3), the low phase shift amplitude adjusting circuit is connected with control terminals (K4, K5), and a control signal reference voltage terminal (Vr) is respectively connected with the circuits.
Description
The utility model is a kind of being mainly used in electronic systems such as mobile communication, radar, electronic countermeasures and instrument and the equipment as phase place and the continuously adjustable electronic unit of amplitude, belongs to the technical field of GaAs microwave monolithic integral control circuit.
In the technical field of multi-octave GaAs microwave monolithic integral control circuit, because the integrated vector modulator of multi-octave GaAs microwave monolithic has that working band is wide, volume is little, in light weight, no power consumption, consistent the getting well and the reliability advantages of higher of electrical property batch, in electronic system such as radar, electronic countermeasures, mobile communication, space diversity, smart antenna instrument and equipment, be favourably welcome.Parameter and the key technical indexes of describing this properties of product have: 1) operational frequency bandwidth; 2) phase place adjusting range; 3) amplitude adjusting range; 4) phase change is with the linearity of control change in voltage; 5) changes in amplitude is with the linearity of control change in voltage; 6) input and output voltage standing wave ratio; 7) insert loss; 8) chip size; 9) power consumption; 10) chip chamber electrical property consistency; 11) control signal is simple, convenient, and can compatible various polarity control signal.
Like product is owing to the difference of the control device that adopts, and the circuit topology that designing institute adopts is different with technology realization approach and mode, and have following shortcoming: 1) volume is big; 2) weight is heavier; 3) control circuit complexity, and can not compatible various polarity control signal; 4) power consumption is big; 5) operational frequency bandwidth is narrower; 6) manufacture complexity; 7) cost height; 8) reliability is lower; 9) the amplitude adjusting range is little.
The purpose of the present utility model just provides that a kind of insertion loss is little, bandwidth, control signal are simple, convenient, the integrated vector modulator of multi-octave GaAs microwave monolithic that the amplitude adjusting range is big, rate of finished products is high, cost is low and reliability is high.
The integrated vector modulator of multi-octave GaAs microwave monolithic of the present utility model is combined by a plurality of element circuits, and promptly the integrated vector modulator of this monolithic is made up of one 180 degree switching mode digital phase shift circuit, 180 degree reflection-types simulation phase-shift circuit, the low phase shift amplitude adjusting circuit institute that is in series.180 degree switching mode digital phase shift circuit input end P1 are signal input part, 180 degree switching mode digital phase shift circuit output ends connect 180 degree reflection simulation phase-shift circuit inputs, the low phase shift amplitude adjusting circuit input of 180 degree reflection-type simulation phase-shift circuit output terminations, low phase shift amplitude adjusting circuit output P2 is a signal output part, be connected to complementary control end K1 on the 180 degree switching mode digital phase shift circuit, K2, be connected to control end K3 on the 180 degree reflection-type simulation phase-shift circuits, be connected to control end K4 on the low phase shift amplitude adjusting circuit, the reference voltage end Vr of 180 number of degrees word phase-shift circuits and 180 degree simulation phase-shift circuits and low phase shift amplitude adjusting circuit control signal.The end of the co-planar waveguide G1 of input is a signal input part in the 180 degree switching mode digital phase shift circuit, another termination microstrip line X1 and resistance R 30, another termination reference voltage end of R30 Vr, the source electrode of another termination field-effect transistor T1 of microstrip line and T4, the grid of T1 joins by R1 and control end K1, the source electrode of T1 meets microstrip line X2, another termination microstrip line X3 and X4 of X2, another termination capacitor C 1 of X3, C1 other end ground connection, another termination field-effect transistor of X4 T2 drain electrode, the grid of T2 joins by R2 and control end K1, the source electrode of T2 connects the source electrode of microstrip line X5 and field-effect transistor T3, the grid of T3 joins by R3 and control end K2, the drain electrode of T3, connect the end of microstrip interdigital coupler L1, the termination field-effect transistor T4 that wherein has of microstrip interdigital coupler L1 drains, the other two ends of L1 meet capacitor C 2 and C3 respectively, the other end of C2 and C3 is ground connection respectively, the grid of T4 joins by R4 and control end K2, another termination co-planar waveguide G2 and the resistance R R21 of X5, another termination reference voltage end of R21 Vr.180 degree reflection-type simulation phase-shift circuits are made of the compatible various polarity control signal of the two parts up and down that are symmetrical in microstrip interdigital coupler L2 element circuit, in this element circuit, the T5 source electrode connects microstrip line X8 and resistance R 27, the wherein end of another termination of X8 L2, another termination capacitor C 4 of R27, C4 other end ground connection, the drain electrode of T5 connects capacitor C 5 and resistance R 28, C5 other end ground connection, another termination of R28 Vr, the grid of T5 joins by R5 and control end K3.Low phase shift amplitude adjusting circuit is connected in series mutually by two identical low phase shift matching type switch attenuator circuit units and constitutes, the co-planar waveguide G5 one termination 180 degree reflection-type simulation phase-shift circuit outputs of one of them unit, another termination microstrip line X10, the source electrode of X10 other end connecting resistance R24 and gaas fet T8, the other end of R24 joins with the drain electrode of T8 and microstrip line X11, the grid of T8 joins with control end K5 by resistance R 8, the source electrode of another termination microstrip line X12 of X11 and gaas fet T9, the drain electrode of T9 connects capacitor C 8, C8 other end ground connection, the grid of T9 joins with control end K4 by resistance R 9, the source electrode of another termination microstrip line X13 of X12 and gaas fet T10, the drain electrode of T10 connects capacitor C 9, C9 other end ground connection, the grid of T10 joins with control end K4 by resistance R 10, source electrode and the resistance R 23 of another termination microstrip line X14 of X13 and gaas fet T11, another termination of R23 Vr, the drain electrode of T11 connects capacitor C 10, C10 other end ground connection, the grid of T11 joins with control end K4 by resistance R 11, the source electrode of another termination microstrip line X15 of X14 and gaas fet T12, the drain electrode of T12 connects capacitor C 11, C11 other end ground connection, the grid of T12 joins with control end K4 by resistance R 12, source electrode and the resistance R 22 of another termination gaas fet of X15 T7, drain electrode and the microstrip line X16 of another termination T7 of R22, the grid of T7 joins with control end K5 by resistance R 7, another termination co-planar waveguide of X16 G6, the input of another identical low phase shift matching type switch attenuator circuit unit of another termination of G6, the control end of this unit and control signal reference voltage be correspondence and K4 respectively, K5 and Vr join, and output P2 is signal output part.
Advantage of the present utility model is:
1) the adjustment function of 360 degree signal phases is finished by 180 degree switching mode digital phase shift circuit and 180 degree reflection-type simulation phase-shift circuits, effectively reduced the insertion loss of circuit, broadening operational frequency bandwidth, reduced to insert in the phase place adjustment process variation of loss, simplify circuit, improved rate of finished products.
2) because 180 degree switching mode digital phase shift circuit and 180 degree reflection-type simulation phase-shift circuits and low phase shift amplitude adjusting circuit have all increased the reference voltage end of control signal, control signal that can compatible opposed polarity when using like this, be that control signal can be positive polarity work, also can be negative polarity work, can also be the situation that has positive polarity and negative polarity work simultaneously.Like this can be very easily in the system of various opposed polarity control signals and equipment, use.
3) adopt the interior low phase shift amplitude adjusting circuit of multi-octave frequency range to make in the amplitude adjustment process, respective phase-shifted changes very low in the multi-octave frequency range, the system that is very beneficial for has reduced the complexity of system to Signal Processing and control, so the reliability height.
4) low phase shift amplitude adjusting circuit has adopted two identical low phase shift matching type switch attenuator circuit units to be connected in series formation mutually, has so not only guaranteed the interior excellent electric performance of multi-octave frequency range but also has improved the adjusting range of amplitude greatly.Reduced the discreteness of chip chamber electrical property.
Fig. 1 is a circuit structure block diagram of the present utility model.Comprising 180 degree switching mode digital phase shift circuit, 1,180 degree reflection-type simulation phase-shift circuits 2, low phase shift amplitude adjusting circuit 3, control signal end K1, K2, K3, K4, K5 and control signal reference voltage end Vr.
Fig. 2 is an electrical schematic diagram of the present utility model.
Embodiment of the present utility model is as follows:
The integrated vector modulator of multi-octave GaAs microwave monolithic of the present utility model mainly is connected in series institute mutually and is formed by one 180 degree switching mode digital phase shift circuit 1, one 180 degree reflection-types simulation phase-shift circuit 2, a low phase shift amplitude adjusting circuit.Below the embodiment and the operation principle of each part mentioned above is described respectively.
1) 180 degree switching mode digital phase shift circuit: it is by four gaas fets (T1, T2, T3, T4), microstrip line X1, X2, X3, X4, X5, microstrip interdigital coupler L1, co-planar waveguide G1, G2, resistance R 1, R2, R3, R4, R29, R30, capacitor C 1, C2, C3, the through hole earth terminal, the reference voltage end Vr of a group of complementary control end K1, K2 and control signal forms.The end of the co-planar waveguide G1 of input is a signal input part in the 180 degree switching mode digital phase shift circuit, another termination microstrip line X1 and resistance R 30, another termination reference voltage end of R30 Vr, the source electrode of another termination field-effect transistor T1 of microstrip line and T4, the grid of T1 joins by R1 and control end K1, the source electrode of T1 meets microstrip line X2, another termination microstrip line X3 and X4 of X2, another termination capacitor C 1 of X3, C1 other end ground connection, another termination field-effect transistor of X4 T2 drain electrode, the grid of T2 joins by R2 and control end K1, the source electrode of T2 connects the source electrode of microstrip line X5 and field-effect transistor T3, the grid of T3 joins by R3 and control end K2, the drain electrode of T3, connect the end of microstrip interdigital coupler L1, the termination field-effect transistor T4 that wherein has of microstrip interdigital coupler L1 drains, the other two ends of L1 meet capacitor C 2 and C3 respectively, the other end of C2 and C3 is ground connection respectively, the grid of T4 joins by R4 control end K2, another termination co-planar waveguide G2 and the resistance R 21 of X5, another termination reference voltage end of R21 Vr.When control level is Vr, be conducting (Low ESR) attitude, when control level is Vr-|Vp| (Vp is the field-effect transistor pinch-off voltage, reverse voltage), be to turn-off (high impedance) attitude.Vr can be positive polarity or negative polarity level, also can be zero.During work, T1, T2 are conducting state, and T3, T4 are for closing off-state, and other end state is that T1, T2 are the pass off-state, and T3, T4 are conducting state.The phase difference of multi-octave transmission signals under the two states is needed phase shift.Vice versa.
2) 180 degree reflection-type simulation phase-shift circuits: it is by two gaas fets (T5, T6), microstrip line X6, X7, X8, X9, microstrip interdigital coupler L2, co-planar waveguide G3, G4, resistance R 5, R6, R25, R26, R27, R28, capacitor C 4, C5, C6, C7, the through hole earth terminal, the reference voltage end Vr of control end K3 and control signal forms.During work, T5, T6 are conducting state, and when control level gradually changed from Vr to Vp continuously, the phase place of corresponding multi-octave transmission signals is corresponding to gradually change continuously, and this relative phase variable quantity is needed phase shift.Vice versa.
3) low phase shift amplitude adjusting circuit: it is by 12 gaas fets (T7～T18), 14 microstrip line X10～X23), 4 joint co-planar waveguides (G5～G8), 18 resistance (R7～R24), 8 electric capacity (C8～C15), the through hole earth terminal, the reference voltage end Vr of control end K4, K5 and control signal forms.During work, T7, T8, T13, T14 are conducting state (control level of K5 is Vr), T9～T12, T15～T18 are for closing off-state (control level of K4 is Vp), be the minimal attenuation attitude this moment, when the control level of K5 gradually changed from Vr to Vp continuously, simultaneously when the Vr correspondence gradually changed continuously, the amplitude of corresponding multi-octave transmission signals is corresponding to gradually change the control level of K4 continuously from Vp, this relative amplitude variable quantity is needed amplitude adjustment amount.Vice versa.
According to the above, according to the circuit diagram of Fig. 2, adopt the GaAs single-chip circuit manufacturing process, just can realize the utility model.
Claims (4)
1. integrated vector modulator of multi-octave GaAs microwave monolithic, by microstrip interdigital type coupler, phase-shift circuit and low phase shift amplitude adjusting circuit are formed, it is characterized in that the integrated vector modulator of this multi-octave GaAs microwave monolithic is in series successively by 180 degree switching mode digital phase shift circuit (1) and 180 degree reflection-types simulations phase-shift circuits (2) and low phase shift amplitude adjusting circuit (3) forms, 180 degree switching mode digital phase shift circuit input end P1 are signal input part, low phase shift amplitude adjusting circuit (3) output P2 is a signal output part, be connected to complementary control end K1 on the 180 degree switching mode digital phase shift circuit (1), K2, be connected to control end K3 on the 180 degree reflection-type simulation phase-shift circuits (2), be connected to control end K4 on the low phase shift amplitude adjusting circuit (3), K5, control signal reference voltage end Vr join with above-mentioned three circuit respectively.
2. the integrated vector modulator of multi-octave GaAs microwave monolithic according to claim 1 and 2, it is characterized in that wherein constituting 180 ends of spending the co-planar waveguide G1 of switching mode digital phase shift circuit input ends is signal input part, another termination microstrip line X1 and resistance R 30, resistance R 30 another termination reference voltage end Vr, the source electrode of another termination field-effect transistor T1 of microstrip line and T4, the grid of T1 joins by R1 and control end K1, the source electrode of T1 meets microstrip line X2, another termination microstrip line X3 and X4 of X2, another termination capacitor C 1 of microstrip line X3, C1 other end ground connection, another termination field-effect transistor of microstrip line X4 T2 drain electrode, the grid of T2 joins by R2 and control end K1, the source electrode of T2 connects the source electrode of microstrip line X5 and field-effect transistor T3, the grid of T3 joins by R3 and control end K2, the drain electrode of T3 connects the end of microstrip interdigital coupler L1, the termination field-effect transistor T4 that wherein has of microstrip interdigital coupler L1 drains, the other two ends of L1 meet capacitor C 2 and C3 respectively, the other end of C2 and C3 is ground connection respectively, the grid of T4 joins by R4 and control end K2, another termination co-planar waveguide G2 and the resistance R 21 of X5, another termination reference voltage end of R21 Vr.
3. the integrated vector modulator of multi-octave GaAs microwave monolithic according to claim 1 and 2, it is characterized in that wherein constituting 180 degree reflection-type simulation phase-shift circuits is made of the compatible various polarity control signal of the two parts up and down that are symmetrical in microstrip interdigital coupler L2 element circuit, in this element circuit, the T5 source electrode connects microstrip line X8 and resistance R 27, the wherein end of another termination of X8 L2, another termination capacitor C 4 of B27, C4 other end ground connection, the drain electrode of T5 connects capacitor C 5 and resistance R 28, C5 other end ground connection, another termination of R28 Vr, the grid of T5 joins by R5 and control end K3.
4. the integrated vector modulator of multi-octave GaAs microwave monolithic according to claim 1 and 2, it is characterized in that wherein constituting low phase shift amplitude adjusting circuit is connected in series mutually by two identical low phase shift matching type switch attenuator circuit units and constitutes, the co-planar waveguide G5 one termination 180 degree reflection-type simulation phase-shift circuit outputs of one of them unit, another termination microstrip line X10, the source electrode of X10 other end connecting resistance R24 and gaas fet T8, the other end of B24 joins with the drain electrode of T8 and microstrip line X11, the grid of T8 joins with control end K5 by resistance R 8, the source electrode of another termination microstrip line X12 of X11 and gaas fet T9, the drain electrode of T9 connects capacitor C 8, C8 other end ground connection, the grid of T9 joins with control end K4 by resistance R 9, the source electrode of another termination microstrip line X13 of X12 and gaas fet T10, the drain electrode of T10 connects capacitor C 9, C9 other end ground connection, the grid of T10 joins with control end K4 by resistance R 10, source electrode and the resistance R 23 of another termination microstrip line X14 of X13 and gaas fet T11, another termination of R23 Vr, the drain electrode of T11 connects capacitor C 10, C10 other end ground connection, the grid of T11 joins with control end K4 by resistance R 11, the source electrode of another termination microstrip line X15 of X14 and gaas fet T12, the drain electrode of T12 connects capacitor C 11, C11 other end ground connection, the grid of T12 joins with control end K4 by resistance R 12, source electrode and the resistance R 22 of another termination gaas fet of X15 T7, drain electrode and the microstrip line X16 of another termination T7 of R22, the grid of T7 joins with control end K5 by resistance R 7, another termination co-planar waveguide of X16 G6, the input of another identical low phase shift matching type switch attenuator circuit unit of another termination of G6.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN01217570U CN2468247Y (en) | 2001-02-26 | 2001-02-26 | Multiplex sound interval gallium arsenide (GaAS) microwave single-chip integrated vector modulator |
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| Application Number | Priority Date | Filing Date | Title |
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| CN01217570U CN2468247Y (en) | 2001-02-26 | 2001-02-26 | Multiplex sound interval gallium arsenide (GaAS) microwave single-chip integrated vector modulator |
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| CN2468247Y true CN2468247Y (en) | 2001-12-26 |
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| CN01217570U Expired - Lifetime CN2468247Y (en) | 2001-02-26 | 2001-02-26 | Multiplex sound interval gallium arsenide (GaAS) microwave single-chip integrated vector modulator |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101888218A (en) * | 2010-06-30 | 2010-11-17 | 西安电子科技大学 | Simulated reflection type I-Q vector modulation circuit based on GaAs (Generally accepted Auditing standards) HBT (Heterojunction Bipolar Transistor) device |
| CN103346403A (en) * | 2013-06-09 | 2013-10-09 | 无锡市华牧机械有限公司 | Method for all-angle tablet reflecting array antenna |
| CN109450551A (en) * | 2018-11-30 | 2019-03-08 | 北京邮电大学 | A kind of multi-octave phase-moving method and device |
| CN116032248A (en) * | 2023-01-10 | 2023-04-28 | 成都仕芯半导体有限公司 | High-precision numerical control phase shifting circuit |
-
2001
- 2001-02-26 CN CN01217570U patent/CN2468247Y/en not_active Expired - Lifetime
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101888218A (en) * | 2010-06-30 | 2010-11-17 | 西安电子科技大学 | Simulated reflection type I-Q vector modulation circuit based on GaAs (Generally accepted Auditing standards) HBT (Heterojunction Bipolar Transistor) device |
| CN101888218B (en) * | 2010-06-30 | 2013-01-23 | 西安电子科技大学 | Simulated reflection type I-Q vector modulation circuit based on GaAs (Generally accepted Auditing standards) HBT (Heterojunction Bipolar Transistor) device |
| CN103346403A (en) * | 2013-06-09 | 2013-10-09 | 无锡市华牧机械有限公司 | Method for all-angle tablet reflecting array antenna |
| CN109450551A (en) * | 2018-11-30 | 2019-03-08 | 北京邮电大学 | A kind of multi-octave phase-moving method and device |
| CN116032248A (en) * | 2023-01-10 | 2023-04-28 | 成都仕芯半导体有限公司 | High-precision numerical control phase shifting circuit |
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Expiration termination date: 20110226 Granted publication date: 20011226 |