CN103580645A - 0/pi digital phase shifter based on ultra wide band balun - Google Patents
0/pi digital phase shifter based on ultra wide band balun Download PDFInfo
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- CN103580645A CN103580645A CN201310340574.9A CN201310340574A CN103580645A CN 103580645 A CN103580645 A CN 103580645A CN 201310340574 A CN201310340574 A CN 201310340574A CN 103580645 A CN103580645 A CN 103580645A
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Abstract
The invention discloses a 0/pi digital phase shifter based on ultra wide band balun. The 0/pi digital phase shifter comprises the ultra wide band balun (A) and a broadband matching type single-pole double-throw switch (B) in corresponding connection with the output end of the ultra wide band balun, K1 and K2 are two control ends of the matching type single-pole double-throw switch, and control signals control microwave millimeter wave signals to be output through one port of the broadband matching type single-pole double-throw switch or through the other port of the broadband matching type single-pole double-throw switch respectively. The ultra wide band balun (A) comprises a lower surface metal gradient grounding board, a medium substrate, six upper surface metal sheets, a coplanar ground and coplanar stripline structure, five metalized through holes and an input-output port. The 0/pi digital phase shifter is simple in circuit topology and design, high in phase shift precision and low in standing wave ratio of input and output voltages, and the difference value of all state insertion losses is small.
Description
Technical field
The present invention relates to a kind of digital phase shifter, particularly a kind of 0/ π digital phase shifter based on ultra broadband Ba Lun.
Background technology
The 0/ π digital phase shifter based on ultra broadband Ba Lun is a kind of electronic unit being mainly used in digital microwave telecommunication, mobile communication, radar, electronic countermeasures and guidance instrument isoelectronic series system equipment.In the control circuit of wide-band microwave millimeter wave frequency band, digital phase shifter is one of microwave and millimeter wave major control circuit, and the key technical indexes of describing this properties of product has: 1) operational frequency bandwidth; 2) phase shift figure place; 3) phase shift; 4) Phase shift precision; 5) insertion loss; 6) each state insertion loss is poor; 7) each state input and output side voltage standing wave ratio; 8) switching speed; 9) circuit size; 10) 1 decibel of compression level of power output; 11) consistency of electrical property between circuit.The like product of 0/ π digital phase shifter, owing to designing the circuit topology of employing and the defect that technique realizes approach, in addition bandwidth, phase-shift phase are large, no matter to adopt the modes such as coaxial, waveguide, mixing are integrated, LTCC stereo integrated circuit, still adopt GaAs MMIC mode to realize, electrical performance indexes is all poor conventionally.Major defect has: 1) circuit topology is complicated; 2) design difficulty is large; 3) processes difficulty is large; 4) Phase shift precision is low; 5) input and output side voltage standing wave(VSW) ratio; 6) operational frequency bandwidth is narrower; 7) rate of finished products is lower; 8) affected by process control parameter, between circuit, electrical property consistency is poor; 9) circuit size is larger.
By Ba Lun, realize 0/ π digital phase shift, and in modern microwave circuit design, conversion that also usually need to be from non-equilibrium to balanced transmission line.In Antenna Design, the impedance matching between the balanced feeding of feed and antenna and feeder line also necessarily requires, as slot antenna, and Vivaldi antenna, the design of Archimedes's antenna etc.Ideal situation is that a size of design is little, the balanced impedance converter of high impedance no-load voltage ratio.Along with the development of current mechanics of communication, the continuous expansion of traffic capacity, requires antenna to have work in wider frequency band.Yet because the theory analysis of irregularly shaped Ba Lun is still very difficult, the design and use of this class Ba Lun can only be leaned on experience and experiment.
Summary of the invention
The object of the present invention is to provide a kind of circuit topological structure simple, design easy, technology difficulty is little, can improve Phase shift precision, improve the input and output side voltage standing wave ratio of each state, broadening operational frequency bandwidth, reduces each state insertion loss poor, make electrical property consistency between circuit be subject to process control parameter to affect minimum, the 0/ π digital phase shifter based on ultra broadband Ba Lun that rate of finished products is high.
The technical solution that realizes the object of the invention is: a kind of 0/ π digital phase shifter based on ultra broadband Ba Lun, it is by ultra broadband Ba Lun (A), Broadband Matching type single-pole double-throw switch (SPDT) (B) forms, the input of a branch road of an output termination Broadband Matching type single-pole double-throw switch (SPDT) of ultra broadband Ba Lun (A) signal, the input of another branch road of another output termination Broadband Matching type single-pole double-throw switch (SPDT) of ultra broadband Ba Lun (A) signal, the public road of Broadband Matching type single-pole double-throw switch (SPDT) connects another signal output part, K1 and K2 control another branch road cut-off of a branch road conducting in two branch roads of Broadband Matching type single-pole double-throw switch (SPDT), or a branch road ends another branch road conducting, at port P5, export.Wherein ultra broadband Ba Lun comprises medium substrate, lower surface metal gradual change ground plate, dielectric substrate, six upper surface sheet metals, coplanar and coplanar stripline structure, five plated-through holes and input/output port.
Compared with prior art, its remarkable advantage is: 1, circuit topology is simple in the present invention, and in fact this phase shifter consists of ultra broadband Ba Lun and Broadband Matching type single-pole double-throw switch (SPDT); 2, simplicity of design, as long as design ultra broadband Ba Lun and Broadband Matching type single-pole double-throw switch (SPDT), and designs many more than the simplicity of design of like product of ultra broadband Ba Lun and Broadband Matching type single-pole double-throw switch (SPDT); 3, in manufacture, technology difficulty and control precision require low more than like product; 4, rate of finished products is higher than like product; 5, electrical property improves large, because ultra broadband Ba Lun and Broadband Matching type single-pole double-throw switch (SPDT) electrical property are easier to manufacture and design, so this phase shifter operational frequency bandwidth, Phase shift precision is high, input and output voltage standing wave ratio is low, each state insertion loss difference is little, is easy to integrated; 6, electrical property batch high conformity between circuit; 7, cost is low.
Accompanying drawing explanation
Fig. 1 is the circuit structure block diagram that the present invention is based on the 0/ π digital phase shifter of ultra broadband Ba Lun.
Fig. 2 is the structure chart of super-broadband graded ground of the present invention barron device.
Fig. 3 is the vertical view of super-broadband graded ground of the present invention Ba Lun.
Fig. 4 is the back to back test structure chart of super-broadband graded ground of the present invention Ba Lun.
Fig. 5 is the amplitude difference simulation result figure of the first output port of super-broadband graded ground of the present invention Ba Lun and the phase difference simulation result figure of the second output port signal and the first output port and the second output port signal.
Fig. 6 is the return loss simulation result figure under super-broadband graded ground of the present invention Ba Lun back-to-back topology.
Fig. 7 is the insertion loss simulation result figure under super-broadband graded ground of the present invention Ba Lun back-to-back topology.
Fig. 8 is the circuit structure block diagram of Broadband Matching type single-pole double-throw switch (SPDT) of the present invention.
Fig. 9 is the circuit structure block diagram (the Broadband Matching type single-pole double-throw switch (SPDT) detailed circuit diagram realizing containing field-effect transistors) of phase shifter of the present invention.
Figure 10 is the circuit structure block diagram (containing the Broadband Matching type single-pole double-throw switch (SPDT) detailed circuit diagram realizing by PIN diode) of phase shifter of the present invention.
Embodiment
Below in conjunction with accompanying drawing, the present invention is described in further detail.
In conjunction with Fig. 1, Fig. 2, Fig. 8, Fig. 9, Figure 10, the 0/ π digital phase shifter based on ultra broadband Ba Lun of the present invention, it is comprised of ultra broadband Ba Lun (A) and Broadband Matching type single-pole double-throw switch (SPDT) (B) two parts.Input with a branch road of one of ultra broadband Ba Lun (A) signal output termination Broadband Matching type single-pole double-throw switch (SPDT), another exports the input of another branch road of termination Broadband Matching type single-pole double-throw switch (SPDT) with ultra broadband Ba Lun (A) signal, the public road of Broadband Matching type single-pole double-throw switch (SPDT) connects another signal output part, K1 and K2 control another branch road cut-off of a branch road conducting in two branch roads of Broadband Matching type single-pole double-throw switch (SPDT), or a branch road ends another branch road conducting, at port P5, export.Cut-off road output externally presents matching status, and the microwave and millimeter wave signal of conducting branch road is from the common port input of broadband matching type single-pole double-throw switch (SPDT).Ultra broadband Ba Lun is by medium substrate, and lower surface metal gradual change ground plate, dielectric substrate, six upper surface sheet metals, coplanar and coplanar stripline structure, five plated-through holes and input/output port form.By microstrip line construction gradual change, convert coplanar stripline structure to, phase difference output is the two paths of signals of 180 °, realizes the conversion that signal never equilibrates to balance.
In conjunction with Fig. 1, Fig. 2, Fig. 3, Fig. 8, based on microstrip line, to the super-broadband graded ground Ba Lun of coplanar stripline, comprise medium substrate, lower surface metal ground plate, upper surface the first sheet metal (S1), the second sheet metal (S2), the 3rd sheet metal (S3), the 4th sheet metal (S4), the 5th sheet metal (S5), the first plated-through hole (V1) in the 6th sheet metal (S6) and dielectric substrate, the second plated-through hole (V2), the 3rd plated-through hole (V3), the 4th plated-through hole (V4), the 5th plated-through hole (V5) and input port (P1), export the first port (P2), export the second port (P3).Wherein, dielectric substrate lower surface metal ground plate is spliced by three parts, first is that the metal ground plate at the corresponding lower surface position of upper surface the first sheet metal (S1) place crossfades into the width same with the 3rd sheet metal (S3) from rectangle along half ridged, the corresponding lower surface of the first sheet metal (S1) fades to without metal floor, and the 3rd sheet metal (S3), the 4th sheet metal (S4) lower surface corresponding position are without grounding plate; Second portion is that upper surface the 5th sheet metal (S5), the 6th sheet metal (S6) have respectively symmetrical gradual change ridged metal ground plate corresponding to lower surface position.Third part, for connecting the metal floor of second portion and first, connects respectively front two parts along lower surface dielectric boundaries, realizes altogether.The first plated-through hole (V1), the second plated-through hole (V2), the 3rd plated-through hole (V3), the 4th plated-through hole (V4), the 5th plated-through hole (V5) are all connected with upper and lower medium surface.The second sheet metal (S2) is affixed on the first plated-through hole (V1), the second plated-through hole (V2), the 3rd plated-through hole (V3), the 4th plated-through hole (V4), the 5th plated-through hole (V5), the lower corresponding ground of the first sheet metal (S1) is guided to and its same layer, realized coplanar ground.The tap that input port (P1) is drawn by the first sheet metal (S1), exporting the first port (P2) is the tap of being drawn by the 3rd sheet metal (S5), exporting the second port (P3) is the tap of being drawn by the 4th sheet metal (S6).The second sheet metal (S2) is connected with the 3rd sheet metal (S3), and the 3rd sheet metal (S3) is connected with the 5th sheet metal (S5), finally outputs to the first port (P2).Input upper surface the first sheet metal (S1) is connected with the 4th sheet metal (S4), and the 4th sheet metal (S4) is connected with the 6th sheet metal (S6), finally outputs to the second port (P3).
Based on microstrip line in the super-broadband graded ground Ba Lun of coplanar stripline, upper surface the first sheet metal (S1), the 5th sheet metal (S5), the 6th sheet metal (S6) are microstrip line construction, corresponding lower surface metal ground plate.The 3rd sheet metal (S3), the 4th sheet metal (S4) are coplanar stripline structure, and corresponding lower surface is without metal floor.Wherein upper surface the first sheet metal (S1) and its corresponding lower surface metal ground form microstrip line construction, the floor of the corresponding lower surface of the first sheet metal (S1) crossfades into the width same with the 3rd sheet metal (S3) by rectangle along half ridged, for realizing signal transmission, from microstrip line construction, be converted to the even transition of coplanar stripline, guarantee electric field by perpendicular media to parallel Jie's fundamental change, realize the conversion gradually that signal never equilibrates to balance, facilitate print production simultaneously, reduce costs, take the structure on coplanar ground, the earth signal of metal floor is passed through to the first plated-through hole (V1), the second plated-through hole (V2), the 3rd plated-through hole (V3), the 4th plated-through hole (V4), the 5th plated-through hole (V5) is guided to dielectric surface, reduce reflection simultaneously.Again from microstrip line construction by the gradual change on floor, from having to nothing, the coplanar stripline structure that is converted into the 3rd sheet metal (S3), the 4th sheet metal (S4) formation, corresponding lower surface is without metal floor, and the signal phase in the 3rd sheet metal (S3), the 4th sheet metal (S4) differs 180 °.
For convenience of being connected with follow-up system, be converted into again microstrip line construction, the 5th sheet metal (S5), the 6th sheet metal (S6) and gradual change ridged metal floor corresponding to difference thereof, realize coplanar stripline to the even transition of microstrip line.Utilize ultra broadband Ba Lun two-way amplitude output signal to equate, phase difference is the circuit transmission characteristic of 180 degree, two output is connect respectively to the input of two branch roads of Broadband Matching type single-pole double-throw switch (SPDT) (B), can obtain the high performance 0/ π digital phase shifter based on ultra broadband Ba Lun.
In conjunction with Fig. 1, Fig. 2, Fig. 8, Fig. 9, Figure 10, Broadband Matching type single-pole double-throw switch (SPDT) (B) forms Broadband Matching type single-pole double-throw switch (SPDT) circuit by field-effect transistor or two kinds of control devices of diode or other control device.The Broadband Matching type single-pole double-throw switch (SPDT) circuit (Fig. 9) that employing field-effect transistor is control device is by 12 field-effect transistors (T1, T2, T3, T4, T5, T6, T11, T12, T13, T14, T15 and T16), and 15 sections of microstrip lines (W1, W2, W3, W4, W5, W6, W7, W8, W12, W13, W14, W15, W16, W17 and W18) and 12 resistance (R1, R2, R3, R4, R5, R6, R11, R12, R13, R14, R15 and R16) and earth terminal form.It has the branch road of a public road and two full symmetrics to form, during work, control end K1 adds the pinch-off voltage (negative polarity) of field-effect transistor, or control voltage amplitude absolute value a little more than pinch-off voltage and lower than puncture voltage, control end K2 adds the special voltage of zero volt of field-effect transistor or is less than the positive polarity voltage of 0.5 volt, now, field-effect transistor T2, T3, T4, T5, T11 and T16 be in high impedance status, field-effect transistor T1, T6, T12, T13, T14 and T15 are in low impedance state, and now, the input signal of port P1 is exported through W2 to W8, this branch road is conducting state, and the branch road of W12 to W18 is isolation, and resistance R 17 is as the matched load to external circuit, when the control signal of control end K1 and K2 is exchanged, field-effect transistor T2, T3, T4, T5, T11 and T16 be in low impedance state, field-effect transistor T1, T6, T12, T13, T14 and T15 are in high impedance status, and the branch road of W2 to W8 is in isolation, and resistance R 7 is as the matched load to external circuit, and the branch road of W12 to W18 is conducting state.
Adopt the Broadband Matching type single-pole double-throw switch (SPDT) circuit (Figure 10) that PIN diode is control device, by 8 PIN diode (D1, D2, D3, D4, D11, D12, D13 and D14), 12 sections of microstrip lines (T1, T2, T3, T4, T5, T6, T7, T13, T14, T15, T16 and T17), 12 electric capacity (C1, C2, C3, C4, C5, C6, C7, C13, C14, C15, C16 and C17), 7 inductance (L1, L2, L3, L4, L5, L6 and L7), 5 resistance (R1, R2, R3, R4 and R5) and earth terminal form.It has the branch road of a public road and two full symmetrics to form, during work, control end K1 adds negative polarity and controls voltage, when control end K2 adds positive polarity control voltage, PIN diode D1, D3, D12 and D14 are in low impedance state, PIN diode D11, D13, D2 and D4 are in high impedance status, now, the input signal of port P1 is exported through T3 to T7, this branch road is conducting state, and the branch road of T13 to T17 is isolation, resistance R 3 is as the matched load to external circuit, when the control signal of control end K1 and K2 is exchanged, PIN diode D1, D3, D12 and D14 are in high impedance status, PIN diode D11, D3, D2 and D4 are in low impedance state, now, T3 to T7 branch road is isolation, resistance R 2 is as the matched load to external circuit, and the branch road of T13 to T17 is conducting state.When the polarity revert all of the connection of PIN diode D1, D2, D3, D4, D11, D12, D13 and D14 in Figure 10 is connected, the conducting of its two branch road and isolation are exchanged.
Embodiment 1.In conjunction with Fig. 1, Fig. 2, Fig. 8, Fig. 9, an output port of ultra broadband Ba Lun is one end that microwave and millimeter wave signal output part P2 connects microstrip line W8 in the Broadband Matching type single-pole double-throw switch (SPDT) consisting of field-effect transistor, the source electrode of another termination field-effect transistor T6 of W8 and one end of resistance R 7, the drain electrode of another termination T6 of R7 and one end of microstrip line W7, one end of the grid connecting resistance R6 of T6, the other end of R6 connects control end K2, one end of another termination microstrip line W6 of W7 and the drain electrode of field-effect transistor T5, the source ground of T5, one end of the grid connecting resistance R5 of T5, the other end of R5 connects control end K1, one end of another termination microstrip line W5 of W6 and the drain electrode of field-effect transistor T4, the source ground of T4, one end of the grid connecting resistance R4 of T4, the other end of R4 connects control end K1, one end of another termination microstrip line W4 of W5 and the drain electrode of field-effect transistor T3, the source ground of T3, one end of the grid connecting resistance R3 of T3, the other end of R3 connects control end K1, one end of another termination microstrip line W3 of W4 and the drain electrode of field-effect transistor T2, the source ground of T2, one end of the grid connecting resistance R2 of T2, the other end of R2 connects control end K1, the source electrode of another termination field-effect transistor T1 of W3, the drain electrode of T4 connects one end of W2, one end of the grid connecting resistance R1 of T1, the other end of R1 connects control end K2, another termination microstrip line W1 of W2 and one end (common port) of microstrip line W12, another termination microwave and millimeter wave signal output part P5 of W1, another output port P3 of ultra broadband Ba Lun connects the one end of microstrip line W18 in the Broadband Matching type single-pole double-throw switch (SPDT) consisting of field-effect transistor, the source electrode of another termination field-effect transistor T16 of W18 and one end of resistance R 17, the drain electrode of another termination T16 of R17 and one end of microstrip line W17, one end of the grid connecting resistance R16 of T16, the other end of R16 connects control end K1, one end of another termination microstrip line W16 of W17 and the drain electrode of field-effect transistor T15, the source ground of T15, one end of the grid connecting resistance R15 of T15, the other end of R15 connects control end K2, one end of another termination microstrip line W15 of W16 and the drain electrode of field-effect transistor T14, the source ground of T14, one end of the grid connecting resistance R14 of T14, the other end of R14 connects control end K2, one end of another termination microstrip line W14 of W15 and the drain electrode of field-effect transistor T13, the source ground of T13, one end of the grid connecting resistance R13 of T13, the other end of R13 connects control end K2, one end of another termination microstrip line W13 of W14 and the drain electrode of field-effect transistor T12, the source ground of T12, one end of the grid connecting resistance R12 of T12, the other end of R12 connects control end K2, the source electrode of another termination field-effect transistor T11 of W13, the drain electrode of T14 connects one end of W12, one end of the grid connecting resistance R11 of T11, the other end of R11 connects control end K12, another termination microstrip line W1 of W12 and one end (common port) of microstrip line W2.
The two-way output of ultra broadband Ba Lun connects respectively the input of two branch roads of Broadband Matching type single-pole double-throw switch (SPDT), due to two branch road full symmetrics of Broadband Matching type single-pole double-throw switch (SPDT), so the amplitude of this two-way is also identical with phase place variation.
The 0/ π digital phase shifter operation principle based on ultra broadband Ba Lun is described below: microwave and millimeter wave wideband input signal is inputted from ultra broadband Ba Lun input port (P1), two output ports of ultra broadband Ba Lun connect respectively the output of two branch roads of Broadband Matching type single-pole double-throw switch (SPDT) (B), the public road output of Broadband Matching type single-pole double-throw switch (SPDT) (B) is signal output part (P5), when the control end K1 of Broadband Matching type single-pole double-throw switch (SPDT) (B) and K2 add the DC control signal of a group, two branch roads of Broadband Matching type single-pole double-throw switch (SPDT) B (branch road 1 and branch road 2) are respectively in conducting and isolation, branch road 1 conducting, branch road 2 isolation, the output port of ultra broadband Ba Lun (P2) signal is exported from the public road output P5 of broadband matching type single-pole double-throw switch (SPDT) B by the branch road 1 of Broadband Matching type single-pole double-throw switch (SPDT) (B), now, the signal of the output port of ultra broadband Ba Lun is isolated at the branch road 2 of Broadband Matching type single-pole double-throw switch (SPDT) (B), when the control end K1 of Broadband Matching type single-pole double-throw switch (SPDT) (B) and K2 add another group DC control signal, two branch road conductings of Broadband Matching type single-pole double-throw switch (SPDT) B and isolation are exchanged, branch road 2 conductings, branch road 1 isolation, the signal of the output port of ultra broadband Ba Lun (P3) is exported from the public road output P5 of broadband matching type single-pole double-throw switch (SPDT) B by the branch road 2 of Broadband Matching type single-pole double-throw switch (SPDT) (B), now, the signal of the output port of ultra broadband Ba Lun is isolated at the branch road 1 of Broadband Matching type single-pole double-throw switch (SPDT) B, two states equates in the amplitude of P5 output signal, phase phasic difference 180 degree of output signal, if the phase place using the output port P2 by ultra broadband Ba Lun from P5 output signal is as with reference to phase place, the output port P3 by ultra broadband Ba Lun spends from the phase place hysteresis 180 of P5 output signal than the output port P2 of ultra broadband Ba Lun from the phase place of P5 output signal.Otherwise phase place is leading 180 degree, thereby realize 0/ π digital phase shift function.
Embodiment 2.In conjunction with in conjunction with Fig. 1, Fig. 2, Fig. 8, Figure 10, the present invention is based on the 0/ π digital phase shifter of ultra broadband Ba Lun, except the element realizations such as Broadband Matching type single-pole double-throw switch (SPDT) employing PIN diode are different from embodiment 1, all the other are all identical with embodiment 1, are described in detail as follows below with regard to different piece:
An output port of ultra broadband Ba Lun is one end that microwave and millimeter wave signal output part (P2) connects microstrip line T7 in the Broadband Matching type single-pole double-throw switch (SPDT) consisting of PIN diode, one end of another termination capacitor C 4 of T7, one end of another termination microstrip line T6 of C4, the positive pole of one end of inductance L 4 and PIN diode D4, one end of the negative pole connecting resistance R2 of D4, the other end ground connection of R2, one end of another termination capacitor C 5 of L4 and control end K1, the other end ground connection of capacitor C 5, one end of another termination capacitor C 3 of T6, one end of another termination microstrip line T5 of C3, the positive pole of another termination PIN diode D3 of T5 and one end of L3, another termination capacitor C 6 of L3 and one end of resistance R 4, the other end ground connection of C6 and R4, the negative pole of D3 connects one end of microstrip line T4, one end of another termination inductance L 2 of T4, the negative pole of the positive pole of PIN diode D2 and PIN diode D1, the minus earth of D2, one end of another termination capacitor C 7 of L2 and control end K1, the other end ground connection of C7, the positive pole of D1 connects one end of microstrip line T3, another termination microstrip line T2 of T3 and one end (common port) of T13, another termination capacitor C 1 of T2 and one end of inductance L 1, another termination capacitor C 2 of L1 and one end of resistance R 1, the other end ground connection of C2 and R1, one end of another termination microstrip line T1 of C1, another termination microwave and millimeter wave signal output part P5 of T1, another output port P3 of ultra broadband Ba Lun connects the one end of microstrip line T17 in the Broadband Matching type single-pole double-throw switch (SPDT) consisting of PIN diode, one end of another termination capacitor C 14 of T17, one end of another termination microstrip line T16 of C14, the positive pole of one end of inductance L 14 and PIN diode D14, one end of the negative pole connecting resistance R3 of D14, the other end ground connection of R3, one end of another termination capacitor C 15 of L14 and control end K2, the other end ground connection of capacitor C 15, one end of another termination capacitor C 13 of T16, one end of another termination microstrip line T15 of C13, the positive pole of another termination PIN diode D13 of T5 and one end of L13, another termination capacitor C 16 of L13 and one end of resistance R 5, the other end ground connection of C16 and R5, the negative pole of D13 connects one end of microstrip line T14, one end of another termination inductance L 12 of T14, the negative pole of the positive pole of PIN diode D12 and PIN diode D11, the minus earth of D12, one end of another termination capacitor C 17 of L12 and control end K2, the other end ground connection of C17, the positive pole of D11 connects one end of microstrip line T13, another termination microstrip line T2 of T13 and one end (common port) of T3.
The operation principle that the present invention is based on the 0/ π digital phase shifter of ultra broadband Ba Lun is summarized as follows:
Broadband microwave signal enters microstrip line from input port (P1), by gradual change metal floor and through hole, realize coplanar ground, by microstrip line transmission, being converted to coplanar stripline transmits, realizing two paths of signals phase difference is 180 degree, being converted to microstrip line construction is conveniently connected with follow-up system again, totally realized the conversion that signal never equilibrates to balance, two outputs of ultra broadband Ba Lun (P2, P3) connect respectively two inputs of Broadband Matching type single-pole double-throw switch (SPDT), by K1, K2, control conducting or cut-off, realize 0/ π digital phase shift.
Super-broadband graded ground Ba Lun in the present invention is of a size of 10.16mm * 25.4mm * 0.5mm.Its performance can as can be seen from Figure 4 realize the ultra wideband from 12.8GHz to 47.2GHz, and bandwidth is 34.4GHz, and phase balance is for being less than 11.6 °, and amplitude balance is for being less than 2.07dB.
Claims (3)
1. a 0/ π digital phase shifter based on ultra broadband Ba Lun, it is characterized in that: it is by ultra broadband Ba Lun (A), Broadband Matching type single-pole double-throw switch (SPDT) (B) forms, input with a branch road of one of ultra broadband Ba Lun (A) signal output termination Broadband Matching type single-pole double-throw switch (SPDT), another exports the input of another branch road of termination Broadband Matching type single-pole double-throw switch (SPDT) with ultra broadband Ba Lun (A) signal, the public road of Broadband Matching type single-pole double-throw switch (SPDT) connects another signal output part, K1 and K2 control another branch road cut-off of a branch road conducting in two branch roads of Broadband Matching type single-pole double-throw switch (SPDT), or a branch road ends another branch road conducting, at port P5, export, wherein ultra broadband Ba Lun (A) comprises medium substrate, lower surface metal ground plate, the first plated-through hole (V1), the second plated-through hole (V2), the 3rd plated-through hole (V3), the 4th plated-through hole (V4), the 5th plated-through hole (V5) and input port (P1) in upper surface the first sheet metal (S1), the second sheet metal (S2), the 3rd sheet metal (S3), the 4th sheet metal (S4), the 5th sheet metal (S5), the 6th sheet metal (S6) and dielectric substrate, exports the first port (P2), exports the second port (P3), wherein, dielectric substrate lower surface metal ground plate is spliced by three parts, first is that the metal ground plate at the corresponding lower surface position of upper surface the first sheet metal (S1) place crossfades into the width same with the 3rd sheet metal (S3) from rectangle along half ridged, the corresponding lower surface of the first sheet metal (S1) fades to without metal floor, and the 3rd sheet metal (S3), the 4th sheet metal (S4) lower surface corresponding position are without grounding plate, second portion is that upper surface the 5th sheet metal (S5), the 6th sheet metal (S6) have respectively symmetrical gradual change ridged metal ground plate corresponding to lower surface position, third part, for connecting the metal floor of second portion and first, connects respectively front two parts along lower surface dielectric boundaries, realizes altogether, the first plated-through hole (V1), the second plated-through hole (V2), the 3rd plated-through hole (V3), the 4th plated-through hole (V4), the 5th plated-through hole (V5) are all connected with upper and lower medium surface, the second sheet metal (S2) is affixed on the first plated-through hole (V1), the second plated-through hole (V2), the 3rd plated-through hole (V3), the 4th plated-through hole (V4), the 5th plated-through hole (V5), the lower corresponding ground of the first sheet metal (S1) is guided to and its same layer, realized coplanar ground, the tap that input port (P1) is drawn by the first sheet metal (S1), exporting the first port (P2) is the tap of being drawn by the 3rd sheet metal (S5), exporting the second port (P3) is the tap of being drawn by the 4th sheet metal (S6), the second sheet metal (S2) is connected with the 3rd sheet metal (S3), and the 3rd sheet metal (S3) is connected with the 5th sheet metal (S5), finally outputs to the first port (P2), input upper surface the first sheet metal (S1) is connected with the 4th sheet metal (S4), and the 4th sheet metal (S4) is connected with the 6th sheet metal (S6), finally outputs to the second port (P3).
2. the 0/ π digital phase shifter based on ultra broadband Ba Lun according to claim 1, it is characterized in that: the circuit of Broadband Matching type single-pole double-throw switch (SPDT) is comprised of a public road and two identical branch roads, this routing resistance, electric capacity, inductance, microstrip line, earth terminal and field-effect transistor form; Public route microstrip line W1 forms, one of them route microstrip line W2 of two identical branch roads, W3, W4, W5, W6, W7, W8, resistance R 1, R2, R3, R4, R5, R6, R7, field-effect transistor T1, T2, T3, T4, T5, T6, control end K1, K2 and earth terminal form, another route microstrip line W12, W13, W14, W15, W16, W17, W18, resistance R 11, R12, R13, R14, R15, R16, R17, field-effect transistor T11, T12, T13, T14, T15, T16, control end K1, K2 and earth terminal form; Ultra broadband Ba Lun (A) is characterised in that: comprise that upper surface the first sheet metal (S1), the 5th sheet metal (S5), the 6th sheet metal (S6) are microstrip line construction, corresponding lower surface metal ground plate; The 3rd sheet metal (S3), the 4th sheet metal (S4) are that coplanar stripline structure, corresponding lower surface are without metal floor; Wherein the floor of the corresponding lower surface of the first sheet metal (S1) along half ridged crossfade into the width same with the 3rd sheet metal (S3), for realize signal transmission from microstrip line construction be converted to coplanar stripline even transition, guarantee electric field by perpendicular media to parallel Jie's fundamental change, realize the conversion gradually that signal never equilibrates to balance; The first plated-through hole (V1), the second plated-through hole (V2), the 3rd plated-through hole (V3), the 4th plated-through hole (V4), the 5th plated-through hole (V5) connect simultaneously upper and lower surface, the earth signal of lower surface guide to coplanar with upper surface sheet metal, in order to guarantee the even transition of electromagnetic field from microstrip line to coplanar stripline, to reduce reflection.
3. the 0/ π digital phase shifter of ultra broadband Ba Lun according to claim 1, it is characterized in that: the circuit of Broadband Matching type single-pole double-throw switch (SPDT) is comprised of a public road and two identical branch roads, this routing resistance, electric capacity, inductance, microstrip line, earth terminal and PIN diode form, public route microstrip line T1, T2, capacitor C 1, C2, resistance R 1, inductance L 1 and earth terminal form, two one of them route microstrip line T3 of identical branch road, T4, T5, T6, T7, capacitor C 3, C4, C5, C6, C7, inductance L 2, L3, L4, resistance R 2, R4, diode D1, D2, D3, D4, control end K1, K2 and earth terminal form, another route microstrip line T13, T14, T15, T16, T17, capacitor C 13, C14, C15, C16, C17, inductance L 12, L13, L14, resistance R 3, R5, diode D11, D12, D13, D14, control end K1, K2 and earth terminal form, ultra broadband Ba Lun (A) is characterised in that: upper surface the first sheet metal (S1) and its corresponding lower surface metal ground form microstrip line construction, for convenience of print production, reduce costs, take the structure on coplanar ground, the earth signal of metal floor is passed through to the first plated-through hole (V1), the second plated-through hole (V2), the 3rd plated-through hole (V3), the 4th plated-through hole (V4), the 5th plated-through hole (V5) is guided to dielectric surface, again from microstrip line construction by the gradual change on floor, from having to nothing, be converted into the 3rd sheet metal (S3), the coplanar stripline structure that the 4th sheet metal (S4) forms, corresponding lower surface is without metal floor, the 3rd sheet metal (S3), signal phase in the 4th sheet metal (S4) differs 180 °, for convenience of being connected with follow-up system, be converted into again microstrip line construction, the 5th sheet metal (S5), the 6th sheet metal (S6) and gradual change ridged metal floor corresponding to difference thereof, realize coplanar stripline to the even transition of microstrip line.
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| CN111969309A (en) * | 2020-07-29 | 2020-11-20 | 福州物联网开放实验室有限公司 | Multi-frequency broadband antenna array, feeding device and antenna device |
| CN112671372A (en) * | 2020-12-01 | 2021-04-16 | 清华大学 | Electrically-tunable digital phase shifter and control method thereof |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN104202015A (en) * | 2014-08-31 | 2014-12-10 | 南京信息工程大学 | Microwave lumped parameter 180-degree electrically controlled phase shifter |
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| CN106654469B (en) * | 2016-11-23 | 2019-06-14 | 北京无线电测量研究所 | A kind of digital phase shifter for microwave&millimeter-wave IC |
| CN111969309A (en) * | 2020-07-29 | 2020-11-20 | 福州物联网开放实验室有限公司 | Multi-frequency broadband antenna array, feeding device and antenna device |
| CN112671372A (en) * | 2020-12-01 | 2021-04-16 | 清华大学 | Electrically-tunable digital phase shifter and control method thereof |
| CN112671372B (en) * | 2020-12-01 | 2023-12-08 | 清华大学 | Electrically-controlled digital phase shifter and control method thereof |
| CN112688652A (en) * | 2020-12-22 | 2021-04-20 | 成都美数科技有限公司 | Numerical control 0-pi phase shifter |
| CN113285697A (en) * | 2021-05-31 | 2021-08-20 | 电子科技大学 | Matching reconfigurable ultra-wideband single-pole multi-throw radio frequency switch |
| CN113612456A (en) * | 2021-10-11 | 2021-11-05 | 深圳飞骧科技股份有限公司 | Broadband microwave power amplifier |
| CN114744383A (en) * | 2022-05-30 | 2022-07-12 | 南京邮电大学 | Low-loss single-switch broadband microwave 180-degree phase shifter with coplanar waveguide structure |
| CN114744383B (en) * | 2022-05-30 | 2023-12-01 | 南京邮电大学 | Low-loss single-switch broadband microwave 180-degree phase shifter with coplanar waveguide structure |
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