CN108847825A

CN108847825A - Transistor recommends pair and recommends the radio frequency amplifying circuit to structure with this

Info

Publication number: CN108847825A
Application number: CN201810377832.3A
Authority: CN
Inventors: 韩克锋
Original assignee: CETC 55 Research Institute
Current assignee: CETC 55 Research Institute
Priority date: 2018-04-25
Filing date: 2018-04-25
Publication date: 2018-11-20
Anticipated expiration: 2038-04-25
Also published as: CN108847825B

Abstract

It is recommended pair the invention discloses a kind of transistor and recommends the radio frequency amplifying circuit to structure with this, transistor is recommended to including the identical the first transistor of polarity and second transistor, the input terminal of second transistor is connect after an input terminal half-wavelength phase delay transmission line with the input terminal of the first transistor, and the input signal phase of the first transistor lags behind the input signal phase 180 degree of second transistor；The output signal of the second transistor synthesizes after an output end half-wavelength phase delay transmission line with the output signal of the first transistor；Recommending to formula radio frequency amplifying circuit includes that above-mentioned transistor is recommended to, power input and power take-off, the input terminal of the power input connection second transistor, and the power take-off connects the output end of the first transistor；The present invention advantageously reduces Match circuits difficulty to the improvement of port impedance line degree to recommending；The linearity for being conducive to improve power amplification circuit, improves the added efficiency of device power.

Description

Transistor recommends pair and recommends the radio frequency amplifying circuit to structure with this

Technical field

The present invention relates to RF ICs more particularly to a kind of transistor to recommend to structure, while being related to having the crystalline substance Body pipe recommends recommending to formula radio frequency amplifying circuit to structure.

Background technique

Radio frequency amplifier device and circuit be widely used in communication, navigation, identification, observing and controlling, radio and television, remote sensing telemetering, The radio system of the applications such as radio astronomy, electronic countermeasure, in such applications the noise of radio frequency amplifier device or circuit, increase The indexs such as benefit, power density, power added efficiency are more crucial, particularly with high-power, super high power radio frequency amplifying circuit, Power consumption, efficiency are more prominent；In addition, its total grid width of activated amplifier part or the gross area are big, device input, output-resistor It is small, port Impedance line it is non-linear the features such as, lead to that impedance matching difficulty is big, matching network element is more；Amplify electricity for radio frequency The relevant issues on road, the invention proposes a kind of scheme that push-pull configuration is applied to radio frequency amplifying circuit, the program is conducive to The power added efficiency of radio frequency amplifying circuit is improved, impedance matching difficulty is reduced and reduces impedance matching element；Radio frequency is put Several applications of big circuit improve the performance of circuit using this method, reduce design difficulty with positive effect.

Push-pull circuit has important application in power amplification circuit and switching power circuit, and typical push-pull circuit is by two The transistor of a opposed polarity forms, and if nmos-pmos unipolar transistor is to the push-pull configuration of composition, npn-pnp is ambipolar Push-pull configuration etc. of the transistor to composition.In AC signal such as audio signal, rf signal amplification circuit, two kinds of polar crystalline substances In the positive half cycle, negative half period alternate conduction and work of signal, reach reduces distortion, reduces power consumption, improves efficiency and other effects body pipe.

Summary of the invention

Goal of the invention：In view of the problems of the existing technology, the object of the present invention is to provide a kind of for improving circuit Performance, the transistor for reducing design difficulty are recommended to structure, and the second object of the present invention is to provide one kind, and there is the transistor to push away Draw the radio frequency amplifying circuit to structure.

Technical solution：A kind of transistor is recommended pair, including the first transistor and second transistor, the first transistor and The polarity of second transistor is identical, the input terminal of the second transistor after an input terminal half-wavelength phase delay transmission line with The input terminal of the first transistor connects, and the input signal phase of the first transistor lags behind the input signal of second transistor Phase 180 degree；The output signal of the second transistor after an output end half-wavelength phase delay transmission line with first crystal The output signal of pipe synthesizes.

The first transistor and second transistor are GaN HEMT power tube.

The output end half-wavelength phase delay transmission line and output end half-wavelength phase delay transmission line are half-wavelength PCB Microstrip line.

What a kind of transistor was recommended pair recommends to formula radio frequency amplifying circuit, including power input and power output End, the power input connect the input terminal of the second transistor, and the power take-off connects the first transistor Output end.

The power input and the transistor are recommended between, further include sending-end impedance matching network.

The transistor is recommended between the power take-off, further including output end impedance matching network.

Further, the radio frequency amplifying circuit further includes DC bias circuit.

The power input includes Distributed Power Architecture, and the power take-off includes power combining structures；Power is defeated Inbound port is recommended by Distributed Power Architecture and multiple transistors to connection, and power output port passes through power combining structures and more A transistor is recommended to connection.

Beneficial effect

Compared to the prior art, the present invention has following significant advantage：1, it using recommending to structure, recommends to port Impedance The improvement of the linearity advantageously reduces Match circuits difficulty；2, the linearity for being conducive to improve power amplification circuit, passes through The non-linear of input impedance is reduced, the added efficiency of device power is improved.

Detailed description of the invention

Fig. 1 is that transistor of the invention is recommended to structural schematic diagram；

Fig. 2 is push-pull type radio frequency amplifying circuit structure chart of the invention；

Fig. 3 is transistor symmetrical structure schematic diagram；

Fig. 4 is input, output port impedance linearity contrast schematic diagram in push-pull configuration and symmetrical structure.

Specific embodiment

Technical solution of the present invention is described in further detail below with reference to embodiment and attached drawing.

A kind of radio frequency amplifying circuit for push-pull configuration that this patent proposes has used for reference the theory of conventional push-pull circuit, but with It has significant difference：First is that the transistor based on two identical polars constitutes push-pull transistor pair；Second is that in terms of output end, though Right two transistors of push-pull transistor centering alternate conduction in time, but it there is no within the signal period alternately to load Pour into and extract electric current, thus a kind of only " class is recommended " structure；Third is that its phase shift based on transmission line and delay generate 180 ° of phase differences realize the alternate conduction recommended pair.

Transistor in Fig. 1 is recommended to structure chart；The first transistor 101, second transistor 102 are recommended to input terminal half Wavelength (180 °) phase delay transmission line 103 and recommending constitutes output end half-wavelength (180 °) phase delay transmission line 104 Transistor of the invention is recommended to structure, and the polarity and size of two transistors are all the same；The input terminal of second transistor 102 passes through Connect after input terminal half-wavelength phase delay transmission line 103 with the input terminal of the first transistor 101, second transistor 102 it is defeated Signal synthesizes after an output end half-wavelength phase delay transmission line 104 with the output signal of the first transistor 101 out.

Fig. 2 is push-pull type radio frequency amplifying circuit structure chart of the invention, chooses the first transistor 101 and second transistor 102 bias state makes its work in B class state, due to 102 input end signal phase of the first transistor 101 and second transistor Difference is 180 degree, i.e. the input signal phase of the first transistor 101 lags behind the input signal phase 180 of second transistor 102 Degree, is two transistors alternate conduction and cut-off in time domain, and two transistors introduce identical additional phase shift, the first transistor 101 and 102 output end signal phase difference of second transistor be also 180 °, 102 output end signal of second transistor pass through output end It is synthesized after half-wavelength phase delay transmission line 104 with 101 output signal of the first transistor；Transistor recommend to and power input Between end, power take-off, sending-end impedance matching network 105 and output end impedance matching network 106 is also respectively connected； 107 recommend for input terminal power input and multiple transistors to Distributed Power Architecture, and 108 recommend pair for the multiple transistors of output end Power combing and export structure, DC bias circuit do not go out in figure Chinese style.

In the embodiment of the present invention, the first transistor 101 and second transistor 102 are GaN HEMT power tube, are recommended pair It input terminal half-wavelength (180 °) phase delay transmission line 103 and recommends to output end half-wavelength (180 °) phase delay transmission line 104 be half-wavelength PCB microstrip line, and sending-end impedance matching network 105 and output end impedance matching network 106 are inductance, capacitor Equal passive elements, 107,108 be PCB microstrip line.

The nonlinear characteristic of transistor input, output-resistor often increases the design difficulty of radio frequency amplifying circuit --- needs Complicated match circuit and harmonic controling technology etc..If the linearity of transistor input, output-resistor is improved, radio frequency The challenge of the impedance matching of amplifying circuit will reduce；And push-pull type radio frequency amplifying circuit major advantage shown in FIG. 1 is exactly Transistor is recommended to the nonlinear reduction of input, output-resistor：Due to recommending the work of two transistors of centering in rp state, The nonlinear complementarity of the port Impedance of two transistors of synchronization and counteracting in signal time domain, and consider half-wavelength transmission line Do not introduce impedance variations, therefore the non-linear reduction of input, output-resistor that transistor is recommended pair, Fig. 4 show push-pull configuration (Fig. 1) With input, output port impedance linearity contrast schematic diagram in symmetrical structure (Fig. 3), wherein T indicates the period, and Z indicates impedance, 201 meanings are expressed as single transistor port Impedance (a kind of simplified signal, does not represent less than the variation in a signal period Actual impedance), 202 signified expression phase-reversing tube port Impedances, the port of the 203 signified symmetrical structures for indicating two transistors composition Impedance, the 204 signified port Impedances recommended pair for indicating two transistors compositions.In summary, it recommends to port impedance line The improvement of degree advantageously reduces Match circuits difficulty, in addition, the linearity of device input impedance influences device radio frequency work Angle of flow when making commonly enters nonlinear reduce of impedance and adds for improving device power to influence power added efficiency Efficiency is beneficial.

Claims

1. a kind of transistor is recommended pair, including the first transistor (101) and second transistor (102), it is characterised in that：Described One transistor (101) is identical with the polarity of second transistor (102), and the input terminal of the second transistor (102) is through an input End half-wavelength phase delay transmission line (103) is connect with the input terminal of the first transistor (101) afterwards, the first transistor (101) input signal phase lags behind the input signal phase 180 degree of second transistor (102)；The second transistor (102) output signal is believed after an output end half-wavelength phase delay transmission line (104) with the output of the first transistor (101) Number synthesis.

2. transistor according to claim 1 is recommended pair, it is characterised in that：The first transistor (101) and the second crystalline substance Body pipe (102) is GaN HEMT power tube.

3. transistor according to claim 1 is recommended pair, it is characterised in that：The output end half-wavelength phase delay transmission Line (103) and output end half-wavelength phase delay transmission line (104) are half-wavelength PCB microstrip line.

4. a kind of recommend with what any transistor of claim 1-3 was recommended pair to formula radio frequency amplifying circuit, feature exists In：Including power input and power take-off, the power input connects the input terminal of the second transistor (102), The power take-off connects the output end of the first transistor (101).

5. according to claim 4 recommend to formula radio frequency amplifying circuit, it is characterised in that：The power input and described Transistor is recommended between, further includes sending-end impedance matching network (105).

6. according to claim 4 recommend to formula radio frequency amplifying circuit, it is characterised in that：The transistor recommend to and institute It states between power take-off, further includes output end impedance matching network (106).

7. according to claim 4 recommend to formula radio frequency amplifying circuit, it is characterised in that：It further include DC bias circuit.

8. according to claim 4 recommend to formula radio frequency amplifying circuit, it is characterised in that：The power input includes function Rate distribution structure, the power take-off include power combining structures；Power input ports by Distributed Power Architecture with it is multiple Transistor is recommended to connection, and power output port is recommended by power combining structures and multiple transistors to connection.