CN115913152A - Push-pull power amplifying circuit and radio frequency front end module - Google Patents
Push-pull power amplifying circuit and radio frequency front end module Download PDFInfo
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Abstract
The invention discloses a push-pull power amplification circuit and a radio frequency front end module, which comprise a first push-pull power amplifier, a second push-pull power amplifier and a tuning circuit, wherein the first push-pull power amplifier is connected with the second push-pull power amplifier; the first push-pull power amplifier comprises a first balun, and the second push-pull power amplifier comprises a second balun; a first output end of the first balun outputs a radio frequency output signal, a second output end of the first balun is connected with a first output end of the second balun, and a second output end of the second balun is connected with a grounding end; one end of the tuning circuit is connected with the second output end of the first balun and the second balun, and the other end of the tuning circuit is connected with a grounding end; the tuning circuit is configured to tune a common-mode signal in the radio-frequency output signal, so that the common-mode signal in the radio-frequency output signal output by the push-pull power amplification circuit is effectively suppressed, and the total loss of the push-pull power amplification circuit is greatly reduced.
Description
Technical Field
The invention relates to the technical field of radio frequency, in particular to a push-pull power amplifying circuit and a radio frequency front-end module.
Background
Mobile communication technology has evolved to the fifth Generation, and 5G NR (5 th-Generation New Radio) is a global 5G standard as a completely New air interface design based on Orthogonal Frequency Division Multiplexing (OFDM), and is also a very important cellular mobile technology base for the next Generation. The push-pull power amplifying circuit is used as a core radio frequency unit in a communication system, and the performance characteristics of the push-pull power amplifying circuit have great influence on the overall indexes of the system, particularly the loss characteristics of the push-pull power amplifying circuit seriously influence the total power consumption of the whole communication system. Therefore, how to avoid the excessive loss of the push-pull power amplifier circuit becomes a problem to be solved urgently at present.
Disclosure of Invention
The embodiment of the invention provides a push-pull power amplification circuit and a radio frequency front end module, which solve the problem of overlarge loss of the push-pull power amplification circuit.
A push-pull power amplifying circuit comprises a first push-pull power amplifier, a second push-pull power amplifier and a tuning circuit; the first push-pull power amplifier comprises a first balun and the second push-pull power amplifier comprises a second balun; a first output end of the first balun outputs a radio frequency output signal, a second output end of the first balun is connected with a first output end of the second balun, and a second output end of the second balun is connected with a ground end; one end of the tuning circuit is connected with the second output end of the first balun and the first output end of the second balun, and the other end of the tuning circuit is connected with a grounding end; the tuning circuit is configured to tune a common mode signal in the radio frequency output signal.
Further, the tuning circuit includes a first inductance.
Further, the tuning circuit includes a first resistor.
Further, the tuning circuit comprises a first resistor and a first inductor connected in series, or comprises a first resistor and a first inductor connected in parallel.
Further, the first push-pull power amplifier further comprises a first differential amplifying transistor and a second differential amplifying transistor, and the second push-pull power amplifier comprises a third differential amplifying transistor and a fourth differential amplifying transistor; the first differential amplifying transistor is configured to receive a first radio frequency signal and output a first radio frequency amplified signal to a first input terminal of the first balun; the second differential amplifying transistor is configured to receive a second radio frequency signal and output a second radio frequency amplified signal to the second input terminal of the first balun; the third differential amplifying transistor is configured to receive a third radio frequency signal and output the third radio frequency amplified signal to the first input terminal of the second balun; a first terminal of the fourth differential amplifying transistor is configured to receive a fourth radio frequency signal; outputting a fourth radio frequency amplified signal to a second input terminal of the second balun; the first differential amplification transistor is arranged on the side far away from the second push-pull power amplifier, and the fourth differential amplification transistor is arranged on the side far away from the first push-pull power amplifier.
Further, the phase of the first radio frequency signal is the same as the phase of the third radio frequency signal; the phase of the second radio frequency signal is the same as the phase of the fourth radio frequency signal.
Further, the first differential amplification transistor is an HBT transistor and includes a base, a collector and an emitter, the base of the first differential amplification transistor receives an input first radio-frequency signal, the collector of the first differential amplification transistor is coupled to the first input terminal of the first balun, and the emitter of the first differential amplification transistor is grounded; the second differential amplification transistor is an HBT (heterojunction bipolar transistor) and comprises a base electrode, a collector electrode and an emitter electrode, the base electrode of the second differential amplification transistor receives an input second radio-frequency signal, the collector electrode of the second differential amplification transistor is coupled to the second input end of the first balun, and the emitter electrode of the second differential amplification transistor is grounded; the base of the third differential amplification transistor receives an input third radio frequency signal, the collector of the third differential amplification transistor is coupled to the first input end of the second balun, and the emitter of the third differential amplification transistor is grounded; the base of the fourth differential amplification transistor receives an input fourth radio-frequency signal, the collector of the fourth differential amplification transistor is coupled to the second input end of the second balun, and the emitter of the fourth differential amplification transistor is grounded.
Further, the first balun includes a primary winding and a secondary winding, the primary winding including a first primary coil and a second primary coil; the secondary winding comprises a first secondary coil and a second secondary coil; the first primary coil and the first secondary coil are coupled to form a first coupling coil, and the second primary coil and the second secondary coil are coupled to form a second coupling coil; the first coupling coil and the second coupling coil are far away from each other.
A radio frequency front end module comprises a substrate, a push-pull power amplification chip arranged on the substrate, a first balun and a second balun arranged on the substrate, and a tuning circuit arranged on the substrate; the push-pull power amplification chip comprises a first differential amplification transistor, a second differential amplification transistor, a third differential amplification transistor and a fourth differential amplification transistor; the first differential amplifying transistor is configured to receive a first radio frequency signal, the first differential amplifying transistor is connected with a first bonding pad of the push-pull power amplifying chip, and the first bonding pad is in wire bonding with a first input end of the first balun; the second differential amplifying transistor is configured to receive a second radio frequency signal, the second differential amplifying transistor is connected with a second pad of the push-pull power amplifying chip, and the second pad is in wire bonding with a second input end of the first balun; the third differential amplifying transistor is configured to receive a third radio frequency signal, the third differential amplifying transistor is connected with a third pad of the push-pull power amplifying chip, and the third pad is wire-bonded to the first input end of the second balun; the fourth differential amplifying transistor is configured to receive a fourth radio frequency signal, the fourth differential amplifying transistor is connected with a fourth pad of the push-pull power amplifying chip, and the fourth pad is wire-bonded to the second input end of the second balun; a first output end of the first balun outputs a radio frequency output signal, a second output end of the first balun is connected with a first output end of the second balun, and a second output end of the second balun is connected with a ground end; one end of the tuning circuit is connected with the second output end of the first balun and the first output end of the second balun, and the other end of the tuning circuit is connected with a grounding end; the tuning circuit is configured to tune a common mode signal in the radio frequency output signal.
Further, the tuning circuit comprises a planar spiral inductor, or the tuning circuit comprises an SMD resistor.
The push-pull power amplifying circuit comprises a first push-pull power amplifier, a second push-pull power amplifier and a tuning circuit; the first push-pull power amplifier comprises a first balun and the second push-pull power amplifier comprises a second balun; a first output end of the first balun outputs a radio frequency output signal, a second output end of the first balun is connected with a first output end of the second balun, and a second output end of the second balun is connected with a ground end; one end of the tuning circuit is connected with the second output end of the first balun and the second balun, and the other end of the tuning circuit is connected with a grounding end; the tuning circuit is configured to tune a common mode signal in the radio frequency output signal; in this embodiment, the second output terminal of the first balun is connected to the first output terminal of the second balun, and a tuning circuit connected to ground is connected between the second output terminal of the first balun and the first output terminal of the second balun, where the tuning circuit is configured to tune a common-mode signal in the radio-frequency output signal, that is, to shift a resonant drum peak point generated in a frequency band out of the frequency band, (preferably, to shift the resonant drum peak point generated in the frequency band out of the frequency band), or to suppress a harmonic drum peak point generated in the frequency band, so as to achieve effective suppression of a push-pull signal in the radio-frequency output signal output by the push-pull power amplification circuit, thereby greatly reducing a total loss of the push-pull power amplification circuit.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings needed to be used in the description of the embodiments of the present invention will be briefly introduced below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and it is obvious for those skilled in the art that other drawings can be obtained according to these drawings without inventive labor.
Fig. 1 is a schematic circuit diagram of a push-pull power amplifier circuit according to an embodiment of the invention;
FIG. 2 is another circuit diagram of a push-pull power amplifier circuit according to an embodiment of the invention;
FIG. 3 is another circuit diagram of a push-pull power amplifier circuit according to an embodiment of the invention;
FIG. 4 is another circuit diagram of a push-pull power amplifier circuit according to an embodiment of the invention;
FIG. 5 is another circuit diagram of a push-pull power amplifier circuit according to an embodiment of the invention;
FIG. 6 is another circuit diagram of the push-pull power amplifier circuit according to an embodiment of the invention;
FIG. 7 is a schematic circuit diagram of an RF front-end module according to an embodiment of the present invention;
FIG. 8 is a schematic circuit diagram of an RF front-end module according to an embodiment of the present invention;
fig. 9 is another circuit diagram of the rf front-end module according to an embodiment of the invention.
In the figure: 10. a first push-pull power amplifier; 11. a first balun; 20. a first hot push-pull power amplifier; 21. a second balun; m1, a second differential amplifying transistor; m2, a second differential amplifying transistor; m3, a third differential amplifying transistor; m4, a fourth differential amplifying transistor; 100. a substrate; 200. a push-pull power amplification chip; 30. a tuning circuit; c1, a first capacitor; c2, a second capacitor; l1, a first inductor; r1 and a first resistor.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are some, not all, embodiments of the present invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
It is to be understood that the present invention may be embodied in many different forms and should not be construed as being limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the invention to those skilled in the art. In the drawings, the size and relative sizes of layers and regions may be exaggerated throughout the same reference numerals to indicate same elements for clarity.
It will be understood that when an element or layer is referred to as being "on," "adjacent to," "connected to," or "coupled to" another element or layer, it can be directly on, adjacent to, connected to, or coupled to the other element or layer, or intervening elements or layers may be present. In contrast, when an element is referred to as being "directly on," "directly adjacent," "directly connected to," or "directly coupled to" other elements or layers, there are no intervening elements or layers present. It will be understood that, although the terms first, second, third, etc. may be used to describe various elements, components, regions, layers and/or sections, these elements, components, regions, layers and/or sections should not be limited by these terms. These terms are only used to distinguish one element, component, region, layer or section from another element, component, region, layer or section. Thus, a first element, component, region, layer or section discussed below could be termed a second element, component, region, layer or section without departing from the teachings of the present invention.
Spatial relationship terms such as "under 82303030," "under 823030; below," "under 823030; above," "over," etc. may be used herein for convenience of description to describe the relationship of one element or feature to another element or feature illustrated in the figures. It will be understood that the spatially relative terms are intended to encompass different orientations of the device in use or operation in addition to the orientation depicted in the figures. For example, if the device in the figures is turned over, then elements or features described as "below" or "beneath" other elements or features would then be oriented "above" the other elements or features. Thus, the exemplary terms "at 8230, below" and "at 8230, below" may include both an upper and a lower orientation. The device may be otherwise oriented (rotated 90 degrees or at other orientations) and the spatial descriptors used herein interpreted accordingly.
The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention. As used herein, the singular forms "a", "an" and "the" are intended to include the plural forms as well, unless the context clearly indicates otherwise. It will be further understood that the terms "comprises" and/or "comprising," when used in this specification, specify the presence of stated features, integers, steps, operations, elements, and/or components, but do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components, and/or groups thereof. As used herein, the term "and/or" includes any and all combinations of the associated listed items.
In the following description, for purposes of explanation, specific details are set forth in order to provide a thorough understanding of the present invention. The following detailed description of the preferred embodiments of the invention, however, the invention is capable of other embodiments in addition to those detailed.
The present embodiment provides a push-pull power amplifier circuit, as shown in fig. 1, including a first push-pull power amplifier 10, a second push-pull power amplifier 20, and a tuning circuit 30. The first push-pull power amplifier 10 comprises a first balun 11 and the second push-pull power amplifier 20 comprises a second balun 21. A first output end of the first balun 11 outputs a radio frequency output signal, a second output end of the first balun is connected to a first output end of the second balun 21, and a second output end of the second balun 21 is connected to a ground end.
In an embodiment, the push-pull power amplifier circuit further includes a pre-conversion circuit (not shown in the figure), an input end of the pre-conversion circuit receives the rf input signal as a signal receiving end of the push-pull power amplifier system, and is configured to perform a conversion process on the rf input signal, output the first rf signal and the second rf signal to the first push-pull power amplifier 10, and output the third rf signal and the fourth rf signal to the second push-pull power amplifier 20. Alternatively, the preceding stage conversion circuit may be a circuit composed of two conversion baluns, a circuit composed of three conversion baluns, or a circuit with any other topology. In this embodiment, the specific circuit structure of the preceding stage conversion circuit is not limited.
The first push-pull power amplifier 20 is configured to amplify the first radio frequency signal and the second radio frequency signal. The second push-pull power amplifier 30 is configured to amplify the third radio frequency signal and the fourth radio frequency signal. It can be understood that the push-pull power amplifying circuit of the present application, which includes the first push-pull power amplifier 20 and the second push-pull power amplifier 30, has a larger output power than a circuit including only a single push-pull power amplifier.
The first push-pull power amplifier 10 comprises a first balun 11 and the second push-pull power amplifier 20 comprises a second balun 21. The first balun 11 is configured to perform a conversion synthesis on the first radio frequency signal and the second radio frequency signal amplified by the first push-pull power amplifier 10. The second balun 21 is configured to perform a conversion synthesis on the third radio frequency signal and the fourth radio frequency signal amplified by the second push-pull power amplifier 20.
A first output end of the first balun 11 outputs a radio frequency output signal, a second output end of the first balun is connected to a first output end of the second balun 21, and a second output end of the second balun 21 is connected to a ground end. One end of the tuning circuit is connected to the second output end of the first balun 11 and the second balun, and the other end is connected to a ground end. The tuning circuit is configured to tune a common mode signal in the radio frequency output signal.
In a specific embodiment, since the first balun 11 and/or the second balun 21 inevitably have some parasitic capacitances, some interfering common-mode signals exist in the radio-frequency output signal output by the push-pull power amplification circuit, so that a resonant peak point is generated in a frequency band, thereby causing excessive loss to the push-pull power amplification circuit. In contrast, in the present embodiment, the second output terminal of the first balun 11 is connected to the first output terminal of the second balun 21, and a tuning circuit 30 connected to the ground is connected between the second output terminal of the first balun and the first output terminal of the second balun 21, where the tuning circuit 30 is configured to tune a common-mode signal in the radio-frequency output signal, that is, to shift a resonant peak point generated in a frequency band out of the frequency band, (preferably, shift the resonant peak point generated in the frequency band out of the frequency band), or to suppress a harmonic peak point generated in the frequency band, so as to effectively suppress the common-mode signal in the radio-frequency output signal output by the push-pull power amplifying circuit, thereby greatly reducing the total loss of the push-pull power amplifying circuit.
In a specific embodiment, as shown in fig. 2, the tuning circuit 30 includes a first inductor L1. Specifically, one end of the first inductor L1 is connected between the second output terminal of the first balun 11 and the first output terminal of the second balun 21, and the other end is connected to the ground terminal. The first inductor L1 and the parasitic capacitance generated by the first balun 11 and/or the second balun 21 form an LC resonance circuit, so that harmonic wave peak points generated in a frequency band are suppressed, the purpose of suppressing a common mode signal in a radio frequency output signal output by the push-pull power amplification circuit is achieved, and the total loss of the push-pull power amplification circuit is greatly reduced.
In one embodiment, in order to avoid introducing unnecessary loss due to the inductor itself while effectively suppressing the common mode signal in the rf output signal output by the push-pull power amplifying circuit, the inductance of the first inductor L1 is 1 μ H-3 μ H. Preferably, the inductance value of the first inductor L1 is 2 μ H.
In a specific embodiment, as shown in fig. 3, the tuning circuit 30 includes a first resistor R1. Specifically, one end of the first resistor R1 is connected between the second output terminal of the first balun 11 and the first output terminal of the second balun 21, and the other end is connected to the ground terminal. The first resistor R1 and the parasitic capacitance generated by the first balun 11 and/or the second balun 21 form an RC circuit, so as to shift the resonant drum peak point generated in the frequency band out of the frequency band, (preferably, shift the resonant drum peak point generated in the frequency band out of the frequency band), achieve the purpose of suppressing the common mode signal in the radio frequency output signal output by the push-pull power amplification circuit, and thereby greatly reduce the total loss of the push-pull power amplification circuit.
In an embodiment, in order to avoid introducing other unnecessary loss due to the resistor itself while effectively suppressing the common mode signal in the rf output signal outputted by the push-pull power amplifying circuit, the resistance value of the first resistor R1 is preferably 10 Ω.
In a specific embodiment, as shown in fig. 4 and 5, the tuning circuit includes a first resistor R1 and a first inductor L1 connected in series, or includes a first resistor R1 and a first inductor L1 connected in parallel. Specifically, the first resistor R1 and the first inductor L1 form a tuning circuit with a parasitic capacitance generated by the first balun 11 and/or the second balun 21, so as to shift a resonant drum peak point generated in a frequency band to outside the frequency band, (preferably, shift the resonant drum peak point generated in the frequency band to a low frequency band outside the frequency band), so as to achieve the purpose of suppressing a common mode signal in a radio frequency output signal output by the push-pull power amplification circuit, thereby greatly reducing the total loss of the push-pull power amplification circuit.
Referring to fig. 6 below, the first push-pull power amplifier 10 further includes a first differential amplifying transistor M1 and a second differential amplifying transistor M2, and the second push-pull power amplifier 20 includes a third differential amplifying transistor M3 and a fourth differential amplifying transistor M4.
The first differential amplifying transistor M1 is configured to receive a first radio frequency signal and output a first radio frequency amplified signal to a first input terminal of the first balun 11; the second differential amplifying transistor M2 is configured to receive a second rf signal and output a second rf amplified signal to the second input terminal of the first balun 11. The third differential amplifying transistor M3 is configured to receive a third rf signal and output the third rf amplified signal to the first input terminal of the second balun 21; the first terminal of the fourth differential amplifying transistor M4 is configured to receive the fourth radio frequency signal; and outputting a fourth rf amplified signal to a second input terminal of the second balun 21.
The first differential amplifier transistor M1, the second differential amplifier transistor M2, the third differential amplifier transistor M3, and the fourth differential amplifier transistor M4 may be HBT transistors or Field Effect Transistors (FETs). Optionally, the first differential amplifying transistor M1 includes at least one HBT transistor (e.g., HBT transistor) or at least one field effect transistor. Illustratively, the first differential amplifying transistor M1 may be formed by connecting a plurality of HBT transistors in parallel. The second differential amplifying transistor M2 includes at least one HBT transistor (e.g., HBT transistor) or at least one field effect transistor. Illustratively, the second differential amplifying transistor M2 may be formed by connecting a plurality of HBT transistors in parallel. The third differential amplifying transistor M3 includes at least one HBT transistor (e.g., HBT transistor) or at least one field effect transistor. Illustratively, the third differential amplifying transistor M3 may be formed by connecting a plurality of HBT transistors in parallel. The fourth differential amplifying transistor M4 includes at least one HBT transistor (e.g., HBT transistor) or at least one field effect transistor. Illustratively, the fourth differential amplifying transistor M4 may be formed by connecting a plurality of HBT transistors in parallel.
It is to be understood that the first differential amplifying transistor M1 and the second differential amplifying transistor M2 may be any one of the first push-pull power amplifier stages, and exemplarily, the amplifying stage may be any one of the driving stage, the intermediate stage, or the output stage. The third differential amplifying transistor M3 and the fourth differential amplifying transistor M4 may be any one of amplification stages in the second push-pull power amplifier, which may be, for example, any one of a driving stage, an intermediate stage, or an output stage
The first differential amplifying transistor M1 is disposed on a side far from the second push-pull power amplifier 20, and the fourth differential amplifying transistor M4 is disposed on a side far from the first push-pull power amplifier 10.
Specifically, the phase of the first radio frequency signal is the same as the phase of the third radio frequency signal; the phase of the second radio frequency signal is the same as the phase of the fourth radio frequency signal. The first radio frequency signal and the second radio frequency signal are a pair of balanced differential signals. The third radio frequency signal and the fourth radio frequency signal are a pair of balanced differential signals.
In an embodiment, if the phase of the first rf signal received by the first differential amplifying transistor M1 is 0 degree, and the phase of the second rf signal received by the second differential amplifying transistor M2 is 180 degrees, the phase of the third rf signal received by the third differential amplifying transistor M3 is 180 degrees, and the phase of the fourth rf signal received by the fourth differential amplifying transistor M4 is 0 degree. It should be noted that it is only necessary to ensure that the phase of the first radio frequency signal received by the first differential amplifying transistor M1 is the same as the phase of the third radio frequency signal received by the third differential amplifying transistor M3; the phase of the second rf signal received by the second differential amplifier transistor M2 may be the same as the phase of the fourth rf signal received by the fourth differential amplifier transistor M4.
In the present embodiment, the phase of the first radio frequency signal received by the first differential amplifying transistor M1 is the same as the phase of the third radio frequency signal received by the third differential amplifying transistor M3; the phase of the second radio frequency signal received by the second differential amplifying transistor M2 is the same as the phase of the fourth radio frequency signal received by the fourth differential amplifying transistor M4; that is, the first push-pull power amplifier 10 and the second push-pull power amplifier 20 are the same push-pull power amplifier, and therefore, the same two push-pull power amplifiers are used, so that not only the overall performance of the push-pull power amplifier circuit can be improved, but also the flexibility and the reusability of the push-pull power amplifier circuit in practical application can be improved.
In a specific embodiment, the first differential amplifying transistor M1 is an HBT transistor, and includes a base, a collector, and an emitter, the base of the first differential amplifying transistor M1 receives an input first radio frequency signal, the collector of the first differential amplifying transistor M1 is coupled to the first input terminal of the first balun 11, and the emitter of the first differential amplifying transistor M1 is grounded; the second differential amplifying transistor M2 is an HBT transistor, and includes a base, a collector, and an emitter, the base of the second differential amplifying transistor M2 receives an input second radio frequency signal, the collector of the second differential amplifying transistor M2 is coupled to the second input end of the first balun 11, and the emitter of the second differential amplifying transistor M2 is grounded; the base of the third differential amplifying transistor M3 receives an input third radio frequency signal, the collector of the third differential amplifying transistor is coupled to the first input terminal of the second balun 11, and the emitter of the third differential amplifying transistor M3 is grounded; the base of the fourth differential amplifying transistor M4 receives an input fourth radio frequency signal, the collector of the fourth differential amplifying transistor M4 is coupled to the second input terminal of the second balun 11, and the emitter of the fourth differential amplifying transistor M4 is grounded.
In a specific embodiment, the first balun 30 includes a primary winding and a secondary winding, the primary winding includes a first primary coil and a second primary coil; the secondary winding comprises a first secondary coil and a second secondary coil; the first primary coil and the first secondary coil are coupled to form a first coupling coil, and the second primary coil and the second secondary coil are coupled to form a second coupling coil; the first coupling coil and the second coupling coil are far away from each other. The first coupling coil and the second coupling coil may be disposed on the same metal layer, or disposed on different adjacent metal layers.
In particular, one part of the primary winding forms a first primary coil and the other part forms a second primary coil. The wiring direction of the first primary coil is a first direction by taking a first end of the primary winding as a starting point; the wiring direction of the second primary coil is a second direction with the second end of the primary winding as a starting point. One part of the secondary winding forms a first secondary coil and the other part forms a second secondary coil. The wiring direction of the first secondary coil is the first direction by taking a first end of a secondary winding as a starting point; and taking a second end of the secondary winding as a starting point, wherein the wiring direction of the second secondary coil is the second direction. The first direction is opposite to the second direction, and the first coupling coil and the second coupling coil are far away from each other.
It is to be understood that the wiring direction is a direction for describing a coil running direction exhibited by an outer structure of the coil, and is not limited to a winding direction of the coil at the time of design or manufacture. As an example, with the first end of the primary winding as a starting point, the coil of the first primary coil runs clockwise; the wiring direction of the second primary coil is the counterclockwise direction with the second end of the primary winding as a starting point.
In a specific embodiment, since the first direction is opposite to the second direction, the current of the side of the first coupling coil adjacent to the second coupling coil and the current of the side of the second coupling coil adjacent to the first coupling coil cancel each other out, so that the mutual cancellation between the currents can be prevented from influencing the coupling degree between the primary winding and the secondary winding by setting the first coupling coil and the second coupling coil away from each other, thereby improving the coupling degree between the primary winding and the secondary winding.
The present embodiment provides a radio frequency front end module, as shown in fig. 7, including a substrate 100, a push-pull power amplifier chip 200 disposed on the substrate 100, a first balun 11 and a second balun 21 disposed on the substrate 100, and a tuning circuit 30 disposed on the substrate 100.
The push-pull power amplification chip 200 includes a first differential amplification transistor M1, a second differential amplification transistor M2, a third differential amplification transistor M3, and a fourth differential amplification transistor M4; the first differential amplifying transistor M1 is configured to receive a first radio frequency signal, the first differential amplifying transistor M1 is connected to a first pad a of the push-pull power amplifying chip 200, and the first pad a is wire-bonded to a first input terminal of the first balun 11. The second differential amplifying transistor M2 is configured to receive a second radio frequency signal, the second differential amplifying transistor M2 is connected to a second pad b of the push-pull power amplifying chip 200, and the second pad b is wire-bonded to a second input terminal of the first balun 11. The third differential amplifying transistor M3 is configured to receive a third radio frequency signal, the third differential amplifying transistor M3 is connected to a third pad c of the push-pull power amplifying chip 200, and the third pad c is wire-bonded to the 21 first input terminal of the second balun; the fourth differential amplifying transistor M4 is configured to receive a fourth radio frequency signal, the fourth differential amplifying transistor M4 is connected to a fourth pad d of the push-pull power amplifying chip 200, and the fourth pad d is wire-bonded to the second input terminal of the second balun 21.
In a specific embodiment, in order to realize the electrical connection of the first differential amplifying transistor M1 and the second differential amplifying transistor M2 disposed on the push-pull power amplifier chip 200 with the first balun 11 disposed on the substrate, and the electrical connection of the third differential amplifying transistor M3 and the fourth differential amplifying transistor M4 disposed on the push-pull power amplifier chip 200 with the second balun 21 disposed on the substrate; the connection may be made by wire bonding. The first pad a, the second pad b, the third pad c and the fourth pad d are arranged on the push-pull power amplifier chip 200, the output end of the first differential amplifying transistor M1 is connected to the first pad a of the push-pull power amplifier chip 200, the first pad a is bonded to the first input end of the first balun 11 through a lead, and the first pad a can be bonded to the first input end of the first balun 11 through one or more leads. And the output terminal of the second differential amplifying transistor M2 is connected to a second pad b of the push-pull power amplifier chip 200, the second pad b is bonded to the second input terminal of the first balun 11 by a wire, wherein the second pad b is bonded to the first input terminal of the first balun 11 by one or more wires; thereby, the first differential amplifying transistor M1 and the second differential amplifying transistor M2 provided on the push-pull power amplifier chip are electrically connected to the first balun 11 provided on the substrate. Likewise, the output terminal of the third differential amplifying transistor M3 is connected to a third pad c of the push-pull power amplifier chip 200, the third pad c being wire-bonded to the first end of the first coil segment, wherein the third pad c is wire-bonded to the first input terminal of the second balun 21 by one or more wires. And connecting the output terminal of the fourth differential amplifying transistor M4 to a fourth pad d of the push-pull power amplifier chip 200, the fourth pad d being wire-bonded to the second end of the second coil segment, wherein the fourth pad d is wire-bonded to the second input terminal of the second balun 21 by one or more wires; thereby achieving electrical connection between the third differential amplifying transistor M3 and the fourth differential amplifying transistor M4 provided on the push-pull power amplifier chip 200 and the second balun 21 provided on the substrate.
A first output end of the first balun 11 outputs a radio frequency output signal, a second output end of the first balun is connected to a first output end of the second balun, and a second output end of the second balun 21 is connected to a ground end. One end of the tuning circuit 30 is connected to the second output terminal of the first balun 11 and the second balun 21, and the other end is connected to a ground terminal.
In a specific embodiment, since the first balun 11 and/or the second balun 21 inevitably have some parasitic capacitances, some interfering common-mode signals exist in the radio-frequency output signal output by the push-pull power amplification circuit, so that a resonant peak point is generated in a frequency band, thereby causing excessive loss to the push-pull power amplification circuit. In contrast, in the present embodiment, the second output terminal of the first balun 11 is connected to the first output terminal of the second balun 21, and a tuning circuit 30 connected to the ground is connected between the second output terminal of the first balun and the first output terminal of the second balun 21, where the tuning circuit 30 is configured to tune a common-mode signal in the radio-frequency output signal, that is, to shift a resonant peak point generated in a frequency band out of the frequency band, (preferably, shift the resonant peak point generated in the frequency band out of the frequency band), or to suppress a harmonic peak point generated in the frequency band, so as to effectively suppress the common-mode signal in the radio-frequency output signal output by the push-pull power amplifying circuit, thereby greatly reducing the total loss of the push-pull power amplifying circuit.
In a specific embodiment, as shown in fig. 8, the tuning circuit 30 includes a planar spiral inductor, or the tuning circuit includes an SMD inductor. It will be appreciated that since the tuning circuit 30 is disposed on the substrate, the inductance in the tuning circuit 30 may preferably be implemented in the form of a planar spiral inductance or an SMD inductance. The planar spiral inductor/SMD inductor and the parasitic capacitor generated by the first balun 11 and/or the second balun 21 form an LC resonance circuit, so that harmonic wave drum peak points generated in a frequency band are suppressed, the purpose of suppressing common mode signals in radio frequency output signals output by the push-pull power amplification circuit is achieved, and the total loss of the push-pull power amplification circuit is greatly reduced.
In one embodiment, the inductance of the planar spiral inductor/SMD inductor is 1 muh-3 muh, in order to avoid introducing other unnecessary loss due to the inductor itself while effectively suppressing the common mode signal in the rf output signal outputted from the push-pull power amplifier circuit. Preferably, the inductance value of the planar spiral inductor/SMD inductor is 2 muh.
In a specific embodiment, as shown in fig. 9, the tuning circuit 30 includes an SMD resistor. It will be appreciated that, since the tuning circuit 30 is provided on a substrate, the resistance in the tuning circuit 30 may preferably be implemented in the form of an SMD resistor. The SMD resistor and the parasitic capacitance generated by the first balun 11 and/or the second balun 21 form an RC circuit, so as to shift the resonant drum peak point generated in the frequency band out of the frequency band, (preferably, shift the resonant drum peak point generated in the frequency band out of the frequency band), thereby achieving the purpose of suppressing the common mode signal in the radio frequency output signal output by the push-pull power amplifying circuit, and greatly reducing the total loss of the push-pull power amplifying circuit.
In one embodiment, to avoid the introduction of other unnecessary loss due to the resistor itself while effectively suppressing the common mode signal in the rf output signal outputted from the push-pull power amplifier circuit, the resistance value of the SMD resistor is preferably 10 Ω.
In one embodiment, the push-pull power amplifier chip may be a chip manufactured by using GaAs or GaN, or the like.
It can be understood that, in the connection manner using wire bonding in the embodiment of the present invention, one or more wire bonding manners may be used for connection, which is not described herein again.
The above-mentioned embodiments are only used for illustrating the technical solutions of the present invention, and not for limiting the same; although the present invention has been described in detail with reference to the foregoing embodiments, it should be understood by those of ordinary skill in the art that: the technical solutions described in the foregoing embodiments may still be modified, or some technical features may be equivalently replaced; such modifications and substitutions do not substantially depart from the spirit and scope of the embodiments of the present invention, and are intended to be included within the scope of the present invention.
Claims (10)
1. A push-pull power amplifying circuit is characterized by comprising a first push-pull power amplifier, a second push-pull power amplifier and a tuning circuit;
the first push-pull power amplifier comprises a first balun and the second push-pull power amplifier comprises a second balun;
a first output end of the first balun outputs a radio frequency output signal, a second output end of the first balun is connected with a first output end of the second balun, and a second output end of the second balun is connected with a ground end;
one end of the tuning circuit is connected to the second output end of the first balun and the first output end of the second balun, and the other end of the tuning circuit is connected to a ground end, and the tuning circuit is configured to tune a common mode signal in the radio frequency output signal.
2. Push-pull power amplification circuit as claimed in claim 1, characterized in that the tuning circuit comprises a first inductance.
3. The push-pull power amplification circuit of claim 1, wherein the tuning circuit comprises a first resistor.
4. Push-pull power amplification circuit as claimed in claim 1, characterized in that the tuning circuit comprises a first resistor and a first inductor connected in series or comprises a first resistor and a first inductor connected in parallel.
5. The push-pull power amplification circuit of claim 1, wherein the first push-pull power amplifier further comprises a first differential amplification transistor and a second differential amplification transistor, the second push-pull power amplifier comprising a third differential amplification transistor and a fourth differential amplification transistor;
the first differential amplifying transistor is configured to receive a first radio frequency signal and output a first radio frequency amplified signal to a first input terminal of the first balun;
the second differential amplifying transistor is configured to receive a second radio frequency signal and output a second radio frequency amplified signal to the second input terminal of the first balun;
the third differential amplifying transistor is configured to receive a third radio frequency signal and output the third radio frequency amplified signal to the first input terminal of the second balun;
a first terminal of the fourth differential amplifying transistor is configured to receive a fourth radio frequency signal; outputting a fourth radio frequency amplified signal to a second input terminal of the second balun;
the first differential amplification transistor is arranged on the side far away from the second push-pull power amplifier, and the fourth differential amplification transistor is arranged on the side far away from the first push-pull power amplifier.
6. The push-pull power amplification circuit of claim 5, wherein the phase of the first radio frequency signal is the same as the phase of the third radio frequency signal; the phase of the second radio frequency signal is the same as the phase of the fourth radio frequency signal.
7. The push-pull power amplification circuit of claim 5, wherein the first differential amplification transistor is an HBT transistor and comprises a base, a collector and an emitter, the base of the first differential amplification transistor receives an input first radio frequency signal, the collector of the first differential amplification transistor is coupled to the first input terminal of the first balun, and the emitter of the first differential amplification transistor is grounded; the second differential amplification transistor is an HBT (heterojunction bipolar transistor) and comprises a base electrode, a collector electrode and an emitter electrode, the base electrode of the second differential amplification transistor receives an input second radio-frequency signal, the collector electrode of the second differential amplification transistor is coupled to the second input end of the first balun, and the emitter electrode of the second differential amplification transistor is grounded; the base of the third differential amplification transistor receives an input third radio frequency signal, the collector of the third differential amplification transistor is coupled to the first input end of the second balun, and the emitter of the third differential amplification transistor is grounded; the base of the fourth differential amplification transistor receives an input fourth radio-frequency signal, the collector of the fourth differential amplification transistor is coupled to the second input end of the second balun, and the emitter of the fourth differential amplification transistor is grounded.
8. The push-pull power amplification circuit of claim 7, wherein the first balun includes a primary winding and a secondary winding, the primary winding including a first primary coil and a second primary coil; the secondary winding comprises a first secondary coil and a second secondary coil; the first primary coil and the first secondary coil are coupled to form a first coupling coil, and the second primary coil and the second secondary coil are coupled to form a second coupling coil; the first coupling coil and the second coupling coil are far away from each other.
9. A radio frequency front-end module is characterized by comprising a substrate, a push-pull power amplification chip arranged on the substrate, a first balun and a second balun arranged on the substrate, and a tuning circuit arranged on the substrate;
the push-pull power amplification chip comprises a first differential amplification transistor, a second differential amplification transistor, a third differential amplification transistor and a fourth differential amplification transistor;
the first differential amplifying transistor is configured to receive a first radio frequency signal, the first differential amplifying transistor is connected with a first bonding pad of the push-pull power amplifying chip, and the first bonding pad is in wire bonding with a first input end of the first balun;
the second differential amplifying transistor is configured to receive a second radio frequency signal, the second differential amplifying transistor is connected with a second pad of the push-pull power amplifying chip, and the second pad is in wire bonding with a second input end of the first balun;
the third differential amplifying transistor is configured to receive a third radio frequency signal, the third differential amplifying transistor is connected with a third pad of the push-pull power amplifying chip, and the third pad is wire-bonded to the first input end of the second balun;
the fourth differential amplifying transistor is configured to receive a fourth radio frequency signal, the fourth differential amplifying transistor is connected with a fourth pad of the push-pull power amplifying chip, and the fourth pad is wire-bonded to the second input end of the second balun;
a first output end of the first balun outputs a radio frequency output signal, a second output end of the first balun is connected with a first output end of the second balun, and a second output end of the second balun is connected with a ground end;
one end of the tuning circuit is connected with the second output end of the first balun and the first output end of the second balun, and the other end of the tuning circuit is connected with a grounding end;
the tuning circuit is configured to tune a common mode signal in the radio frequency output signal.
10. The radio frequency front end module of claim 9, wherein the tuning circuit comprises an SMD inductor or the tuning circuit comprises an SMD resistor.
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Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8164387B1 (en) * | 2010-06-30 | 2012-04-24 | Triquint Semiconductor, Inc. | Simultaneous harmonic termination in a push-pull power amplifier |
| CN203181348U (en) * | 2013-04-15 | 2013-09-04 | 阮小青 | Direct-current low-voltage power supply injection-locking power synthesis light modulation electrodeless lamp |
| CN103327710A (en) * | 2013-04-15 | 2013-09-25 | 张根清 | Solar energy power source injection locking power synthesis light-dimmer electrodeless lamp |
| CN104901641A (en) * | 2015-04-29 | 2015-09-09 | 中国科学院微电子研究所 | Power amplification structure |
| DE102014213684A1 (en) * | 2014-07-15 | 2016-01-21 | Rohde & Schwarz Gmbh & Co. Kg | Efficiency-optimized high-frequency power amplifier |
| CN105978515A (en) * | 2016-05-03 | 2016-09-28 | 华南理工大学 | Transformer coupling radio frequency power amplifier with wide adjustment range and high integration level |
| CN108847825A (en) * | 2018-04-25 | 2018-11-20 | 中国电子科技集团公司第五十五研究所 | Transistor recommends pair and recommends the radio frequency amplifying circuit to structure with this |
| CN208782781U (en) * | 2018-08-28 | 2019-04-23 | 广东宽普科技股份有限公司 | Wireless communication frequency hopping filtered power amplifying circuit for high speed data transfer |
| CN112038736A (en) * | 2020-08-24 | 2020-12-04 | 武汉博畅通信设备有限责任公司 | Radio frequency filter and radio frequency control system |
| CN112187194A (en) * | 2020-09-30 | 2021-01-05 | 锐石创芯（深圳）科技有限公司 | Push-pull power amplifier, radio frequency front-end circuit and wireless device |
-
2021
- 2021-09-30 CN CN202111162897.4A patent/CN115913152B/en active Active
Patent Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8164387B1 (en) * | 2010-06-30 | 2012-04-24 | Triquint Semiconductor, Inc. | Simultaneous harmonic termination in a push-pull power amplifier |
| CN203181348U (en) * | 2013-04-15 | 2013-09-04 | 阮小青 | Direct-current low-voltage power supply injection-locking power synthesis light modulation electrodeless lamp |
| CN103327710A (en) * | 2013-04-15 | 2013-09-25 | 张根清 | Solar energy power source injection locking power synthesis light-dimmer electrodeless lamp |
| DE102014213684A1 (en) * | 2014-07-15 | 2016-01-21 | Rohde & Schwarz Gmbh & Co. Kg | Efficiency-optimized high-frequency power amplifier |
| CN104901641A (en) * | 2015-04-29 | 2015-09-09 | 中国科学院微电子研究所 | Power amplification structure |
| CN105978515A (en) * | 2016-05-03 | 2016-09-28 | 华南理工大学 | Transformer coupling radio frequency power amplifier with wide adjustment range and high integration level |
| CN108847825A (en) * | 2018-04-25 | 2018-11-20 | 中国电子科技集团公司第五十五研究所 | Transistor recommends pair and recommends the radio frequency amplifying circuit to structure with this |
| CN208782781U (en) * | 2018-08-28 | 2019-04-23 | 广东宽普科技股份有限公司 | Wireless communication frequency hopping filtered power amplifying circuit for high speed data transfer |
| CN112038736A (en) * | 2020-08-24 | 2020-12-04 | 武汉博畅通信设备有限责任公司 | Radio frequency filter and radio frequency control system |
| CN112187194A (en) * | 2020-09-30 | 2021-01-05 | 锐石创芯（深圳）科技有限公司 | Push-pull power amplifier, radio frequency front-end circuit and wireless device |
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|---|---|
| CN115913152B (en) | 2023-12-01 |
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