CN114843781B - Terahertz vector modulator based on gallium arsenide diode - Google Patents
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q3/00—Arrangements for changing or varying the orientation or the shape of the directional pattern of the waves radiated from an antenna or antenna system
- H01Q3/26—Arrangements for changing or varying the orientation or the shape of the directional pattern of the waves radiated from an antenna or antenna system varying the relative phase or relative amplitude of energisation between two or more active radiating elements; varying the distribution of energy across a radiating aperture
- H01Q3/28—Arrangements for changing or varying the orientation or the shape of the directional pattern of the waves radiated from an antenna or antenna system varying the relative phase or relative amplitude of energisation between two or more active radiating elements; varying the distribution of energy across a radiating aperture varying the amplitude
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q3/00—Arrangements for changing or varying the orientation or the shape of the directional pattern of the waves radiated from an antenna or antenna system
- H01Q3/26—Arrangements for changing or varying the orientation or the shape of the directional pattern of the waves radiated from an antenna or antenna system varying the relative phase or relative amplitude of energisation between two or more active radiating elements; varying the distribution of energy across a radiating aperture
- H01Q3/30—Arrangements for changing or varying the orientation or the shape of the directional pattern of the waves radiated from an antenna or antenna system varying the relative phase or relative amplitude of energisation between two or more active radiating elements; varying the distribution of energy across a radiating aperture varying the relative phase between the radiating elements of an array
- H01Q3/34—Arrangements for changing or varying the orientation or the shape of the directional pattern of the waves radiated from an antenna or antenna system varying the relative phase or relative amplitude of energisation between two or more active radiating elements; varying the distribution of energy across a radiating aperture varying the relative phase between the radiating elements of an array by electrical means
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Abstract
The invention provides a terahertz vector modulator based on a gallium arsenide diode, which can realize simultaneous accurate control of amplitude and phase, and has the advantages of less required devices, small occupied area and low cost. The invention discloses a terahertz vector modulator based on a gallium arsenide diode, which comprises a rectangular waveguide, a chip area cavity and a terahertz vector modulation chip, wherein the rectangular waveguide is composed of an input waveguide and an output waveguide, the chip area cavity is fixedly arranged between the input waveguide and the output waveguide, the terahertz vector modulation chip is placed in the chip area cavity, the terahertz vector modulation chip is composed of a substrate and a metal structure arranged on the substrate, and the device adopts a simple dual-phase modulator structure which can be well matched with parasitic parameters of the diode and can reduce the adverse effect of the parasitic parameters of the diode on the whole structure to the minimum.
Description
Technical Field
The invention relates to the field of electromagnetic functional devices, in particular to a terahertz vector modulator based on a gallium arsenide diode.
Background
Terahertz waves are between millimeter waves and light waves, generally referring to electromagnetic radiation having frequencies between 0.1THz and 10 THz. Along with the development of science and technology, the spectrum resources of millimeter waves are increasingly tense, and the advantages of terahertz wave bands are gradually revealed, so that the spectrum resources of terahertz become a competing focus, and are currently valued by all countries in the world, and meanwhile, the research is carried out in academia. Terahertz is used as a carrier wave for wireless communication, can perform high-capacity and high-speed information transmission in free space, and has the advantages of large bandwidth and good penetrating capacity. These advantages have made terahertz communication a hot spot in the field of communication and information transmission in recent years.
As a terahertz wireless communication system with important application prospects, a terahertz modulation device is the most critical core device, so that a terahertz vector modulator has become a research focus and a technical difficulty of a terahertz communication technology. In recent years, several articles about terahertz modulators are published in the top publications of international natural science such as Nature, including gallium arsenide, liquid crystal, graphene and artificial super-surface, and modulation of terahertz waves is realized by using excitation modes such as external light sources, electromagnetic fields, and the like.
In the prior art, a cascade connection mode of a phase shifter and an attenuator is generally used for realizing simultaneous modulation of the amplitude and the phase of a signal, the precision of the cascade connection mode modulation cannot meet the requirements of a modern phased array radar and a terahertz communication system, and meanwhile, a digital modulation mode is adopted when a quadrature phase shift keying modulation function is realized, so that a circuit becomes extremely complex. The terahertz vector modulator can realize accurate modulation of the amplitude and the phase of a transmission signal, and has the unique advantages of small size, high integration level and high control precision. As such, the terahertz vector modulator can be widely applied to terahertz wireless communication systems and terahertz radars.
Disclosure of Invention
Aiming at the defects of the problems, the problems of insufficient stability and relative accuracy of amplitude and phase modulation of the existing terahertz modulator are solved. The invention aims to provide a terahertz vector modulator, so that the terahertz vector modulator can realize simultaneous accurate control of amplitude and phase, and meanwhile, fewer devices are required to be used, the occupied area is small, and the cost is low.
The technical aim of the invention is realized by the following technical scheme:
the utility model provides a terahertz vector modulator based on gallium arsenide diode, includes rectangular waveguide, chip area cavity and terahertz vector modulation chip, rectangular waveguide is by input waveguide and output waveguide constitute, input waveguide with seted up between the output waveguide the chip area cavity, place in the chip area cavity terahertz vector modulation chip, terahertz vector modulation chip comprises base and the metallic structure who sets up on the base, this metallic structure includes input E face probe, output E face probe, first directional coupler, first biphase modulator, second biphase modulator and combiner, first directional coupler one end has linked firmly input E face probe, first directional coupler other end has linked firmly first biphase modulator with second biphase modulator, first biphase modulator with combiner fixed connection, output E face probe links firmly the other end of combiner.
Further, the input waveguide and the output waveguide both adopt WR international standard waveguides.
Further, the combiner is a wilkinson power divider, a first input port and a second input port are fixedly arranged at one end, facing away from the output waveguide, of the combiner, an output end is fixedly arranged at the other end of the combiner, and the first input port and the second input port are fixedly connected with a first resistor.
Further, the input E-plane probe extends into the input waveguide and is fixedly connected with the input waveguide, and the output E-plane probe extends into the output waveguide and is fixedly connected with the output waveguide.
Further, four ports are fixedly arranged on the first directional coupler, namely a first input end, a first isolation end, a first through end and a first coupling end, wherein one end of the first directional coupler, which is opposite to the output waveguide, is fixedly provided with the first input end and the first isolation end, the other end of the first directional coupler is fixedly provided with the first through end and the first coupling end, the first input end is fixedly connected with the input E-plane probe, a grounding branch is fixedly connected between the first input end and the cavity of the chip area, and the first through end is connected with the first biphase modulator; the first coupling end is connected with the second bi-phase modulator, the first isolation end is fixedly connected with the metal sector short-circuit surface through the second resistor, and a phase difference of 90 degrees exists between the first through end and the first coupling end, so that a phase difference of 90 degrees exists between the first bi-phase modulator and the second bi-phase modulator.
Further, the first bi-phase modulator is composed of a second directional coupler, a first gallium arsenide diode and a second gallium arsenide diode, four ports are fixedly arranged on the second directional coupler, a second through end and a second coupling end are fixedly arranged at two ends of one side of the second directional coupler respectively, a second input end and a second isolation end are fixedly arranged at two ends of the other side of the second directional coupler respectively, the second input end is fixedly connected with the first through end, the second through end is fixedly connected with the cathode of the first gallium arsenide diode, the second coupling end is fixedly connected with the cathode of the second gallium arsenide diode, and the anode of the first gallium arsenide diode is connected with a feed branch; the second isolation end is connected with the first input port.
Further, the second bi-phase modulator has the same structure as the first bi-phase modulator, the second input end of the second bi-phase modulator is fixedly connected with the first coupling end, and the second isolation end of the second bi-phase modulator is fixedly connected with the second input port of the combiner.
Further, the other end of the output E-plane probe is fixedly connected with the output end.
Further, the metal materials of the cavity walls of the input waveguide and the output waveguide and the chip area cavity are copper, aluminum or gold; the substrate is made of quartz, gallium nitride, gallium arsenide, indium phosphide or silicon carbide; the material of the metal structure is Au; the second resistor and the first resistor are made of TaN, niCr or GaAs.
According to the terahertz vector modulation chip, the on-off state and the resistance value of the gallium arsenide diode on the terahertz vector modulation chip are adjusted through external feed, so that the dynamic modulation of the amplitude and the phase of terahertz waves is realized. Compared with the prior art, the invention has the following advantages: the simple dual-phase modulator structure is adopted, the parasitic parameters of the diode can be well matched, the adverse effect of the parasitic parameters of the diode on the whole structure can be reduced to the minimum, and meanwhile, the dual-phase modulator structure is simple in structure, small in size and capable of realizing low-cost manufacture. The device is packaged in the waveguide cavity, so that the device is effectively protected and prevented from being influenced by external bad factors, the stability of the modulation chip is greatly improved, standard specifications are adopted after packaging, and the device is convenient to produce and process and is convenient to assemble and cooperate with other devices in a system. Finally, the design can realize continuous phase change of 0-360 degrees and continuous modulation of amplitude. At the same time, a low insertion loss wideband QPSK modulation is achieved. The device can be widely applied to a terahertz wireless communication system and a terahertz wave radar, and has extremely high practical value.
Drawings
FIG. 1 is an overall block diagram of the present invention;
FIG. 2 is a diagram of a terahertz vector modulation chip of the present invention;
FIG. 3 is a diagram of a directional coupler of the present invention;
FIG. 4 is a diagram of a first bi-phase modulator of the present invention;
FIG. 5 is a diagram of a Wilkinson power divider of the present invention;
FIG. 6 is a simulated constellation of the present invention;
fig. 7 is a simulated phase diagram of the present invention implementing QPSK modulation;
fig. 8 is a transmission graph of a simulation of the present invention to implement QPSK modulation.
In the above figures: 1. an input waveguide; 2. an output waveguide; 3. a chip region cavity; 4. terahertz vector modulation chip; 5. inputting an E-plane probe; 6. outputting an E-surface probe; 7. a substrate; 8. grounding branches; 9. a first input; 10. a first isolation end; 11. a first through end; 12. a first coupling end; 13. metal sector short road surface; 14. a second input terminal; 15. a second isolation end; 16. a second through terminal; 17. a second coupling end; 18. feeding branches; 19. a first input port; 20. a second input port; 21. an output end; n1, a first directional coupler; n2, a second directional coupler; p1, a first bi-phase modulator; p2, a second bi-phase modulator; w1, a combiner; r1, a second resistor; r2, a first resistor; d1, a first gallium arsenide diode; d2, a second gallium arsenide diode.
Detailed Description
The technical scheme of the invention is further described below with reference to the accompanying drawings and examples.
Examples:
comprises a rectangular waveguide, a chip area cavity 3 and a terahertz vector modulation chip 4, wherein the rectangular waveguide is composed of an input waveguide 1 and an output waveguide 2, the chip area cavity 3 is arranged between the input waveguide 1 and the output waveguide 2, the terahertz vector modulation chip 4 is arranged in the chip area cavity 3, the terahertz vector modulation chip 4 is composed of a substrate 7 and a metal structure arranged on the substrate 7, the metal structure is made of Au and comprises an input E surface probe 5, an output E surface probe 6, a first directional coupler N1, a first biphase modulator P1, a second biphase modulator P2 and a combiner W1, one end of the first directional coupler N1 is fixedly connected with the input E surface probe 5, the other end of the first directional coupler N1 is fixedly connected with the first bi-phase modulator P1 and the second bi-phase modulator P2, the first bi-phase modulator P1 and the second bi-phase modulator P2 are fixedly connected with the combiner W1, the output E-plane probe 6 is fixedly connected with the other end of the combiner W1, the metal materials of the input waveguide 1, the output waveguide 2 and the cavity wall of the chip area cavity 3 are copper, aluminum or gold, the material of the substrate 7 is quartz, gallium nitride, gallium arsenide, indium phosphide or silicon carbide, and the input waveguide 1 and the output waveguide 2 are all WR international standard waveguides, so that the input and output of signals can be realized.
The combiner W1 is a wilkinson power divider, the wilkinson power divider can realize that signals subjected to amplitude and phase modulation by the first bi-phase modulator P1 and the second bi-phase modulator P2 are vector synthesized into one path of signals to be output, one end of the combiner W1, which is opposite to the output waveguide 2, is fixedly provided with a first input port 19 and a second input port 20, the other end of the combiner W1 is fixedly provided with an output end 21, the first input port 19 and the second input port 20 are fixedly connected with a first resistor R2, and the resistance of the first resistor R2 is 100 ohms for improving the isolation between two paths of input signals.
The input E-plane probe 5 extends into the input waveguide 1 and is fixedly connected with the input waveguide 1, so that an input signal is transmitted to the terahertz vector modulation chip 4 by the input waveguide 1, and broadband matching of the input signal is realized; the output E-plane probe 6 extends into the output waveguide 2 and is fixedly connected with the output waveguide 2, so that signals modulated by the terahertz vector modulation chip 4 are transmitted into the output waveguide 2, and broadband matching of output signals is realized.
Four ports are fixedly arranged on the first directional coupler N1, namely a first input end 9, a first isolation end 10, a first through end 11 and a first coupling end 12, wherein one end of the first directional coupler N1, which is opposite to the output waveguide 2, is fixedly provided with the first input end 9 and the first isolation end 10, the other end of the first directional coupler N1 is fixedly provided with the first through end 11 and the first coupling end 12, the first input end 9 is fixedly connected with the input E-plane probe 5, a grounding branch 8 is fixedly connected between the first input end 9 and the chip area cavity 3, and the first through end 11 is connected with the first bi-phase modulator P1; the first coupling end 12 is connected to the second bi-phase modulator P2, and the first isolation end 10 is fixedly connected to the metal sector-shaped short circuit 13 via a second resistor R1, the resistance of the second resistor R1 is 50 ohms, and a phase difference of 90 ° is provided between the first through end 11 and the first coupling end 12, so that a phase difference of 90 ° is provided between the first bi-phase modulator P1 and the second bi-phase modulator P2.
The first bi-phase modulator P1 is composed of a second directional coupler N2, a first gallium arsenide diode D1 and a second gallium arsenide diode D2, four ports are fixedly arranged on the second directional coupler N2, a second through end 16 and a second coupling end 17 are fixedly arranged at two ends of one side of the second directional coupler N2 respectively, a second input end 14 and a second isolation end 15 are fixedly arranged at two ends of the other side of the second directional coupler N2 respectively, the second input end 14 is fixedly connected with the first through end 11, the second through end 16 is fixedly connected with the cathode of the first gallium arsenide diode D1, the second coupling end 17 is fixedly connected with the cathode of the second gallium arsenide diode D2, and the anode of the first gallium arsenide diode D1 and the anode of the second gallium arsenide diode D2 are connected with a feeding branch 18; the second isolation end 15 is connected to the first input port 19, and the first bi-phase modulator P1 and the second bi-phase modulator P2 may feed in a modulated signal through the feed branch 18, so as to realize dynamic regulation and control of signal phase and amplitude.
The second bi-phase modulator P2 has the same structure as the first bi-phase modulator P1, the second input end 14 of the second bi-phase modulator P2 is fixedly connected to the first coupling end 12, and the second isolation end 15 of the second bi-phase modulator P2 is fixedly connected to the second input port 20 of the combiner W1.
The second resistor R1 and the first resistor R2 are made of TaN, niCr or GaAs.
After simulation of the terahertz vector modulator based on the gallium arsenide diode, the terahertz vector modulator based on the gallium arsenide diode has good effect. In this embodiment, the simulation is performed using the 0.1-2000 ohm resistance values of the gallium arsenide diode in the on state, the off state and the intermediate state, and the S21 constellation diagram is shown in fig. 6 at the frequency point of 220GHz, where each point in the diagram represents the amplitude and phase of S21 under different impedances of the diode. The results show that it can achieve 0-360 deg. phase modulation while making amplitude modulation better than-40 dB. As shown in FIG. 7 and FIG. 8, QPSK modulation is simulated by using the resistance values of 0.1-2000 ohms of the connected state and the disconnected state of the gallium arsenide diode, QPSK modulation with phase error of + -3 DEG and amplitude error of + -0.6 dB can be realized on a frequency point of 220GHz, and bandwidth above-10 dB can reach 18GHz. Therefore, the terahertz vector modulator based on the gallium arsenide diode has the characteristics of high precision, low insertion loss, continuous phase and amplitude regulation and control, and can be widely applied to terahertz wireless communication systems and terahertz radar systems.
Finally, it is noted that the above embodiments are only for illustrating the technical solution of the present invention and not for limiting the same, and although the present invention has been described in detail with reference to the preferred embodiments, it should be understood by those skilled in the art that modifications and equivalents may be made thereto without departing from the spirit and scope of the technical solution of the present invention, which is intended to be covered by the scope of the claims of the present invention.
Claims (5)
1. A terahertz vector modulator based on gallium arsenide diodes is characterized in that: the device comprises a rectangular waveguide, a chip area cavity (3) and a terahertz vector modulation chip (4), wherein the rectangular waveguide is composed of an input waveguide (1) and an output waveguide (2), the chip area cavity (3) is formed between the input waveguide (1) and the output waveguide (2), the terahertz vector modulation chip (4) is placed in the chip area cavity (3), the terahertz vector modulation chip (4) is composed of a substrate (7) and a metal structure arranged on the substrate (7), the metal structure comprises an input E-surface probe (5), an output E-surface probe (6), a first directional coupler (N1), a first biphase modulator (P1), a second biphase modulator (P2) and a combiner (W1), one end of the first directional coupler (N1) is fixedly connected with the input E-surface probe (5), the other end of the first directional coupler (N1) is fixedly connected with the first biphase modulator (P1) and the second biphase modulator (P2), the first bi-phase modulator (P1), the second bi-phase modulator (P1) and the output waveguide (W1) are fixedly connected with the other end of the input waveguide (W1), the combiner (W1) is a Wilkinson power divider, one end of the combiner (W1) facing away from the output waveguide (2) is fixedly provided with a first input port (19) and a second input port (20), the other end of the combiner (W1) is fixedly provided with an output end (21), the first input port (19) and the second input port (20) are fixedly connected with a first resistor (R2), the first directional coupler (N1) is fixedly provided with four ports which are respectively a first input end (9), a first isolation end (10), a first through end (11) and a first coupling end (12), one end of the first directional coupler (N1) facing away from the output waveguide (2) is fixedly provided with the first input end (9) and the first isolation end (10), the other end of the first directional coupler (N1) is fixedly provided with a first direct end (11) and a first coupling end (12), the first input end (9) is fixedly connected with a first branch point (8) and a first coupling area (3), and the first directional coupler (5) is fixedly connected with a first phase modulation area (8); the first coupling end (12) is connected with the second dual-phase modulator (P2), the first isolation end (10) is fixedly connected with the metal sector-shaped short pavement (13) through a second resistor (R1), a phase difference of 90 degrees exists between the first direct end (11) and the first coupling end (12), so that a phase difference of 90 degrees exists between the first dual-phase modulator (P1) and the second dual-phase modulator (P2), the first dual-phase modulator (P1) is composed of a second directional coupler (N2), a first gallium arsenide diode (D1) and a second gallium arsenide diode (D2), four ports are fixedly arranged on the second directional coupler (N2), a second direct end (16) and a second coupling end (17) are respectively and fixedly arranged at two ends of one side of the second directional coupler (N2), a second input end (14) and a second direct end (15) are respectively and fixedly arranged at two ends of the other side of the second directional coupler (N2), gallium arsenide (16) is fixedly connected with the second direct end (16) and the second direct end (17), the second direct end (16) is fixedly connected with the second direct end (2) and the second direct end (16) is fixedly connected with the negative electrode (2), the anodes of the first gallium arsenide diode (D1) and the second gallium arsenide diode (D2) are connected with a feed branch (18); the second isolation terminal (15) is connected to the first input port (19).
2. The gallium arsenide diode-based terahertz vector modulator according to claim 1, wherein: the combiner (W1) is a Wilkinson power divider, one end of the combiner (W1) facing away from the output waveguide (2) is fixedly provided with a first input port (19) and a second input port (20), the other end of the combiner (W1) is fixedly provided with an output end (21), and the first input port (19) and the second input port (20) are fixedly connected with a first resistor (R2).
3. The gallium arsenide diode-based terahertz vector modulator according to claim 1, wherein: the second bi-phase modulator (P2) has the same structure as the first bi-phase modulator (P1), the second input end (14) of the second bi-phase modulator (P2) is fixedly connected with the first coupling end (12), and the second isolation end (15) of the second bi-phase modulator (P2) is fixedly connected with the second input port (20) of the combiner (W1).
4. The gallium arsenide diode-based terahertz vector modulator according to claim 1, wherein: the other end of the output E-face probe (6) is fixedly connected with the output end (21).
5. The gallium arsenide diode-based terahertz vector modulator according to claim 1, wherein: the metal materials of the input waveguide (1), the output waveguide (2) and the cavity wall of the chip area cavity (3) are copper, aluminum or gold; the substrate (7) is made of quartz, gallium nitride, gallium arsenide, indium phosphide or silicon carbide; the material of the metal structure is Au; the second resistor (R1) and the first resistor (R2) are made of TaN, niCr or GaAs.
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| US8401399B2 (en) * | 2009-05-28 | 2013-03-19 | Freedom Photonics, Llc. | Chip-based advanced modulation format transmitter |
| CN109655970A (en) * | 2019-01-30 | 2019-04-19 | 电子科技大学 | A kind of integrated transition structure of Terahertz on piece |
| CN114122727B (en) * | 2021-12-03 | 2023-03-21 | 电子科技大学长三角研究院(湖州) | Terahertz amplitude modulator utilizing reverse phase interference principle |
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Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101888218A (en) * | 2010-06-30 | 2010-11-17 | 西安电子科技大学 | Simulated reflection type I-Q vector modulation circuit based on GaAs (Generally accepted Auditing standards) HBT (Heterojunction Bipolar Transistor) device |
Non-Patent Citations (1)
| Title |
|---|
| 沈宏昌 ; 沈亚 ; 潘晓枫 ; 徐波 ; 李思其 ; 曲俊达 ; 韩群飞 ; .基于GaAs工艺的新型I-Q矢量调制器芯片设计.固体电子学研究与进展.2016,(第02期),全文. * |
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