CN114843781A - Terahertz vector modulator based on gallium arsenide diode - Google Patents
Terahertz vector modulator based on gallium arsenide diode Download PDFInfo
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- 229910001218 Gallium arsenide Inorganic materials 0.000 title claims abstract description 47
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q3/00—Arrangements for changing or varying the orientation or the shape of the directional pattern of the waves radiated from an antenna or antenna system
- H01Q3/26—Arrangements for changing or varying the orientation or the shape of the directional pattern of the waves radiated from an antenna or antenna system varying the relative phase or relative amplitude of energisation between two or more active radiating elements; varying the distribution of energy across a radiating aperture
- H01Q3/28—Arrangements for changing or varying the orientation or the shape of the directional pattern of the waves radiated from an antenna or antenna system varying the relative phase or relative amplitude of energisation between two or more active radiating elements; varying the distribution of energy across a radiating aperture varying the amplitude
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q3/00—Arrangements for changing or varying the orientation or the shape of the directional pattern of the waves radiated from an antenna or antenna system
- H01Q3/26—Arrangements for changing or varying the orientation or the shape of the directional pattern of the waves radiated from an antenna or antenna system varying the relative phase or relative amplitude of energisation between two or more active radiating elements; varying the distribution of energy across a radiating aperture
- H01Q3/30—Arrangements for changing or varying the orientation or the shape of the directional pattern of the waves radiated from an antenna or antenna system varying the relative phase or relative amplitude of energisation between two or more active radiating elements; varying the distribution of energy across a radiating aperture varying the relative phase between the radiating elements of an array
- H01Q3/34—Arrangements for changing or varying the orientation or the shape of the directional pattern of the waves radiated from an antenna or antenna system varying the relative phase or relative amplitude of energisation between two or more active radiating elements; varying the distribution of energy across a radiating aperture varying the relative phase between the radiating elements of an array by electrical means
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Abstract
The invention provides a terahertz vector modulator based on a gallium arsenide diode, so that the terahertz vector modulator can realize accurate control on amplitude and phase at the same time, and meanwhile, fewer devices are required to be used, the occupied area is small, and the cost is low. The invention discloses a terahertz vector modulator based on a gallium arsenide diode, which comprises a rectangular waveguide, a chip area cavity and a terahertz vector modulation chip, wherein the rectangular waveguide is composed of an input waveguide and an output waveguide, the chip area cavity is fixedly arranged between the input waveguide and the output waveguide, the terahertz vector modulation chip is placed in the chip area cavity, and the terahertz vector modulation chip is composed of a substrate and a metal structure arranged on the substrate.
Description
Technical Field
The invention relates to the field of electromagnetic functional devices, in particular to a terahertz vector modulator based on a gallium arsenide diode.
Background
Terahertz waves are intermediate between millimeter waves and light waves, and generally refer to electromagnetic radiation having a frequency between 0.1THz and 10 THz. With the development of science and technology, the frequency spectrum resource of millimeter waves is increasingly tense, and the advantages of terahertz wave bands are gradually revealed, so that the terahertz frequency spectrum resource becomes the focus of competition, is currently paid attention from all countries in the world, and meanwhile, the research enthusiasm is also raised in the academic world. Terahertz is used as a carrier wave of wireless communication, can perform large-capacity and high-speed information transmission in a free space, and has the advantages of large bandwidth and good penetrating power. These advantages make terahertz communication a hot spot in the field of communication and information transmission in recent years.
As a terahertz wireless communication system with an important application prospect, a terahertz modulation device is the most critical core device, so that a terahertz vector modulator has become a research focus and a technical difficulty of a terahertz communication technology. In recent years, a plurality of articles about terahertz modulators are published in the top-level publications of the international natural sciences such as Nature, wherein the terahertz modulators include gallium arsenide, liquid crystal, graphene and artificial super-surface, and the terahertz waves are modulated by using excitation methods such as an external light source and an electromagnetic field.
The amplitude and the phase of a signal are modulated simultaneously by a cascade mode of a phase shifter and an attenuator, the modulation precision of the cascade mode can not meet the requirements of a modern phased array radar and a terahertz communication system, and meanwhile, a digital modulation mode is adopted when the quadrature phase shift keying modulation function is realized, so that the circuit becomes extremely complex. The terahertz vector modulator can realize accurate modulation of the amplitude and the phase of a transmission signal, and has the unique advantages of small size, high integration level and high control precision. Therefore, the terahertz vector modulator can be widely applied to terahertz wireless communication systems and terahertz radars.
Disclosure of Invention
Aiming at the defects of the problems, the terahertz modulator aims at solving the problems of insufficient relative precision and stability of amplitude and phase modulation of the existing terahertz modulator. The invention aims to provide a terahertz vector modulator, so that the terahertz vector modulator can realize the simultaneous and accurate control of amplitude and phase, and meanwhile, fewer devices are required to be used, the occupied area is small, and the cost is low.
The technical purpose of the invention is realized by the following technical scheme:
a terahertz vector modulator based on a gallium arsenide diode comprises a rectangular waveguide, a chip area cavity and a terahertz vector modulation chip, wherein the rectangular waveguide is composed of an input waveguide and an output waveguide, the chip area cavity is formed between the input waveguide and the output waveguide, the terahertz vector modulation chip is placed in the chip area cavity, the terahertz vector modulation chip is composed of a substrate and a metal structure arranged on the substrate, the metal structure comprises an input E-face probe, an output E-face probe, a first directional coupler, a first bi-phase modulator, a second bi-phase modulator and a combiner, one end of the first directional coupler is fixedly connected with the input E-face probe, the other end of the first directional coupler is fixedly connected with the first bi-phase modulator and the second bi-phase modulator, and the first bi-phase modulator, The second bi-phase modulator is fixedly connected with the combiner, and the output E-plane probe is fixedly connected to the other end of the combiner.
Further, the input waveguide and the output waveguide both adopt WR international standard waveguides.
Furthermore, the combiner is a wilkinson power divider, one end of the combiner, which faces away from the output waveguide, is fixedly provided with a first input port and a second input port, the other end of the combiner is fixedly provided with an output end, and the first input port and the second input port are fixedly connected with a first resistor.
Furthermore, the input E-plane probe extends into the input waveguide and is fixedly connected with the input waveguide, and the output E-plane probe extends into the output waveguide and is fixedly connected with the output waveguide.
Furthermore, four ports, namely a first input end, a first isolation end, a first through end and a first coupling end, are fixedly arranged on the first directional coupler, the first input end and the first isolation end are fixedly arranged at one end of the first directional coupler, which faces away from the output waveguide, the first through end and the first coupling end are fixedly arranged at the other end of the first directional coupler, the first input end is fixedly connected with the input E-plane probe, a grounding branch is fixedly connected between the first input end and the cavity of the chip area, and the first through end is connected with the first bi-phase modulator; the first coupling end is connected with the second bi-phase modulator, the first isolation end is fixedly connected with the metal fan-shaped short-circuit surface through a second resistor, and a phase difference of 90 degrees is formed between the first through end and the first coupling end, so that a phase difference of 90 degrees is formed between the first bi-phase modulator and the second bi-phase modulator.
Furthermore, the first bi-phase modulator is composed of a second directional coupler, a first gallium arsenide diode and a second gallium arsenide diode, four ports are fixedly arranged on the second directional coupler, a second through end and a second coupling end are fixedly arranged at two ends of one side of the second directional coupler respectively, a second input end and a second isolation end are fixedly arranged at two ends of the other side of the second directional coupler respectively, the second input end is fixedly connected with the first through end, the second through end is fixedly connected with a negative electrode of the first gallium arsenide diode, the second coupling end is fixedly connected with a negative electrode of the second gallium arsenide diode, and a positive electrode of the first gallium arsenide diode and a positive electrode of the second gallium arsenide diode are connected with the feed branch; the second isolation port is connected to the first input port.
Further, the second bi-phase modulator has the same structure as the first bi-phase modulator, the second input end of the second bi-phase modulator is fixedly connected to the first coupling end, and the second isolation end of the second bi-phase modulator is fixedly connected to the second input port of the combiner.
Furthermore, the other end of the output E-plane probe is fixedly connected with the output end.
Furthermore, the metal materials of the input waveguide, the output waveguide and the cavity wall of the cavity of the chip area are copper, aluminum or gold; the substrate is made of quartz, gallium nitride, gallium arsenide, indium phosphide or silicon carbide; the metal structure is made of Au; the second resistor and the first resistor are made of TaN, NiCr or GaAs.
According to the terahertz wave modulation method, the on-off and resistance value of the gallium arsenide diode on the terahertz vector modulation chip are adjusted through external feeding, and the dynamic modulation of the amplitude and the phase of the terahertz wave is achieved. Compared with the prior art, the invention has the following advantages: the simple bi-phase modulator structure is adopted, parasitic parameters of the diode can be well matched by the structure, adverse effects of the parasitic parameters of the diode on the whole structure can be reduced to the minimum, and meanwhile, the structure is simple, the size is small, and low-cost manufacturing can be realized. The device is packaged in the waveguide cavity, so that the device is effectively protected, the influence of external adverse factors is prevented, the stability of a modulation chip is greatly improved, and the device is packaged in a standard specification, so that the device is convenient to produce and process and is convenient to assemble and match with other devices in a system. Finally, the design can realize continuous phase change of 0-360 degrees, and amplitude realizes continuous modulation. Meanwhile, broadband QPSK modulation with low insertion loss is realized. The device can be widely applied to terahertz wireless communication systems and terahertz wave radars and has high practical value.
Drawings
FIG. 1 is an overall block diagram of the present invention;
FIG. 2 is a diagram of a terahertz vector modulation chip according to the present invention;
FIG. 3 is a diagram of a directional coupler of the present invention;
fig. 4 is a diagram of a first bi-phase modulator of the present invention;
FIG. 5 is a diagram of a Wilkinson power divider of the present invention;
FIG. 6 is a simulated constellation diagram of the present invention;
FIG. 7 is a phase diagram of a simulated implementation of QPSK modulation of the present invention;
fig. 8 is a transmission plot of a simulation of the present invention implementing QPSK modulation.
In the above drawings: 1. an input waveguide; 2. an output waveguide; 3. a chip region cavity; 4. a terahertz vector modulation chip; 5. inputting an E-plane probe; 6. outputting an E-plane probe; 7. a substrate; 8. a ground branch section; 9. a first input terminal; 10. a first isolated end; 11. a first pass-through terminal; 12. a first coupling end; 13. a metal sector short-circuit surface; 14. a second input terminal; 15. a second isolated end; 16. a second straight end; 17. a second coupling end; 18. a feed branch; 19. a first input port; 20. a second input port; 21. an output end; n1, a first directional coupler; n2, a second directional coupler; p1, a first bi-phase modulator; p2, a second bi-phase modulator; w1, a combiner; r1, a second resistor; r2, a first resistor; d1, a first gallium arsenide diode; d2, a second gallium arsenide diode.
Detailed Description
The technical solution of the present invention is further explained with reference to the drawings and the embodiments.
Example (b):
the terahertz vector modulator comprises a rectangular waveguide, a chip area cavity 3 and a terahertz vector modulation chip 4, wherein the rectangular waveguide is composed of an input waveguide 1 and an output waveguide 2, the chip area cavity 3 is arranged between the input waveguide 1 and the output waveguide 2, the terahertz vector modulation chip 4 is placed in the chip area cavity 3, the terahertz vector modulation chip 4 is composed of a substrate 7 and a metal structure arranged on the substrate 7, the metal structure is made of Au, the metal structure comprises an input E-plane probe 5, an output E-plane probe 6, a first directional coupler N1, a first bi-phase modulator P1, a second bi-phase modulator P2 and a combiner W1, one end of the first directional coupler N1 is fixedly connected with the input E-plane probe 5, and the other end of the first directional coupler N1 is fixedly connected with the first bi-phase modulator P1 and the second bi-phase modulator P2, the first bi-phase modulator P1 and the second bi-phase modulator P2 are fixedly connected with the combiner W1, the output E-plane probe 6 is fixedly connected to the other end of the combiner W1, the metal materials of the cavity walls of the input waveguide 1, the output waveguide 2 and the chip area cavity 3 are copper, aluminum or gold, the material of the substrate 7 is quartz, gallium nitride, gallium arsenide, indium phosphide or silicon carbide, the input waveguide 1 and the output waveguide 2 both adopt WR international standard waveguides, and signal input and signal output can be realized.
The combiner W1 is a wilkinson power divider, and the wilkinson power divider can implement vector synthesis of signals subjected to amplitude and phase modulation by the first bi-phase modulator P1 and the second bi-phase modulator P2 into one-path signals for output, wherein one end of the combiner W1, which faces away from the output waveguide 2, is fixedly provided with a first input port 19 and a second input port 20, the other end of the combiner W1 is fixedly provided with an output port 21, the first input port 19 and the second input port 20 are both fixedly connected with a first resistor R2, and the resistor of the first resistor R2 is 100 ohms and is used for improving isolation between two-path input signals.
The input E-plane probe 5 extends into the input waveguide 1 and is fixedly connected with the input waveguide 1, so that an input signal is transmitted to the terahertz vector modulation chip 4 from the input waveguide 1, and broadband matching of the input signal is realized; the output E-plane probe 6 extends into the output waveguide 2 and is fixedly connected with the output waveguide 2, so that a signal modulated by the terahertz vector modulation chip 4 is transmitted into the output waveguide 2, and broadband matching of the output signal is realized.
Four ports, namely a first input end 9, a first isolation end 10, a first through end 11 and a first coupling end 12, are fixedly arranged on the first directional coupler N1, the first input end 9 and the first isolation end 10 are fixedly arranged on one end of the first directional coupler N1, which faces away from the output waveguide 2, the first through end 11 and the first coupling end 12 are fixedly arranged on the other end of the first directional coupler N1, the first input end 9 is fixedly connected with the input E-plane probe 5, a grounding branch section 8 is fixedly connected between the first input end 9 and the chip area cavity 3, and the first through end 11 is connected with a first bi-phase modulator P1; the first coupling end 12 is connected to the second bi-phase modulator P2, the first isolation end 10 is fixedly connected to the metal sector-shaped short-circuit surface 13 through a second resistor R1, the resistance of the second resistor R1 is 50 ohms, and the first pass end 11 and the first coupling end 12 have a phase difference of 90 °, so that the first bi-phase modulator P1 and the second bi-phase modulator P2 have a phase difference of 90 °.
The first bi-phase modulator P1 comprises a second directional coupler N2, a first gallium arsenide diode D1 and a second gallium arsenide diode D2, four ports are fixedly arranged on the second directional coupler N2, a second through end 16 and a second coupling end 17 are fixedly arranged at two ends of one side of the second directional coupler N2 respectively, a second input end 14 and a second isolation end 15 are fixedly arranged at two ends of the other side of the second directional coupler N2 respectively, the second input end 14 is fixedly connected with the first through end 11, the second through end 16 is fixedly connected with a negative electrode of the first gallium arsenide diode D1, the second coupling end 17 is fixedly connected with a negative electrode of the second gallium arsenide diode D2, and a positive electrode of the first gallium arsenide diode D1 and a positive electrode of the second gallium arsenide diode D2 are connected with the feed branch 18; the second isolation terminal 15 is connected to the first input port 19, and the first bi-phase modulator P1 and the second bi-phase modulator P2 can feed modulated signals through the feeding branch 18, so as to realize dynamic regulation and control of signal phase and amplitude.
The second bi-phase modulator P2 has the same structure as the first bi-phase modulator P1, the second input terminal 14 of the second bi-phase modulator P2 is fixedly connected to the first coupling terminal 12, and the second isolation terminal 15 of the second bi-phase modulator P2 is fixedly connected to the second input port 20 of the combiner W1.
The second resistor R1 and the first resistor R2 are made of TaN, NiCr or GaAs.
After the terahertz vector modulator based on the gallium arsenide diode is simulated, the terahertz vector modulator based on the gallium arsenide diode is found to have a good effect. In the present embodiment, the gallium arsenide diode is simulated by using the resistance values of 0.1-2000 ohms in the on state, the off state and the intermediate state, and at the frequency point of 220GHz, the constellation diagram of S21 is shown in fig. 6, where each point in the diagram represents the amplitude and phase of S21 under different impedances of the diode. The results show that it can achieve 0-360 ° phase modulation while performing amplitude modulation better than-40 dB. As shown in fig. 7 and 8, the simulated QPSK modulation using the 0.1-2000 ohm resistance values of the gaas diode in the connected state and the disconnected state can realize QPSK modulation with a phase error of ± 3 ° and an amplitude error of ± 0.6dB at a frequency of 220GHz, and a bandwidth of more than-10 dB can reach 18 GHz. Therefore, the gallium arsenide diode-based terahertz vector modulator can be widely applied to terahertz wireless communication systems and terahertz radar systems due to the characteristics of high precision, low insertion loss, continuous phase and amplitude regulation.
Finally, the above embodiments are only for illustrating the technical solutions of the present invention and not for limiting, although the present invention has been described in detail with reference to the preferred embodiments, it should be understood by those skilled in the art that modifications or equivalent substitutions may be made to the technical solutions of the present invention without departing from the spirit and scope of the technical solutions of the present invention, and all of them should be covered in the claims of the present invention.
Claims (9)
1. The utility model provides a terahertz vector modulator based on gallium arsenide diode which characterized in that: the terahertz vector modulation chip comprises a rectangular waveguide, a chip area cavity (3) and a terahertz vector modulation chip (4), wherein the rectangular waveguide is composed of an input waveguide (1) and an output waveguide (2), the chip area cavity (3) is formed between the input waveguide (1) and the output waveguide (2), the terahertz vector modulation chip (4) is placed in the chip area cavity (3), the terahertz vector modulation chip (4) is composed of a substrate (7) and a metal structure arranged on the substrate (7), the metal structure comprises an input E-plane probe (5), an output E-plane probe (6), a first directional coupler (N1), a first bi-phase modulator (P1), a second bi-phase modulator (P2) and a combiner (W1), one end of the first directional coupler (N1) is fixedly connected with the input E-plane probe (5), and the other end of the first directional coupler (N1) is fixedly connected with the first bi-phase modulator (P1) and the second bi-phase modulator (P1) The phase modulator (P2), the first bi-phase modulator (P1) and the second bi-phase modulator (P2) are fixedly connected with the combiner (W1), and the output E-plane probe (6) is fixedly connected to the other end of the combiner (W1).
2. The gallium arsenide diode based terahertz vector modulator of claim 1, wherein: the input waveguide (1) and the output waveguide (2) both adopt WR international standard waveguides.
3. The gallium arsenide diode based terahertz vector modulator of claim 2, wherein: the combiner (W1) is a Wilkinson power divider, one end of the combiner (W1) facing away from the output waveguide (2) is fixedly provided with a first input port (19) and a second input port (20), the other end of the combiner (W1) is fixedly provided with an output end (21), and the first input port (19) and the second input port (20) are both fixedly connected with a first resistor (R2).
4. The gallium arsenide diode based terahertz vector modulator of claim 2, wherein: the input E-plane probe (5) extends into the input waveguide (1) and is fixedly connected with the input waveguide (1), and the output E-plane probe (6) extends into the output waveguide (2) and is fixedly connected with the output waveguide (2).
5. The gallium arsenide diode based terahertz vector modulator of claim 3, wherein: four ports are fixedly arranged on the first directional coupler (N1), namely a first input end (9), a first isolation end (10), a first through end (11) and a first coupling end (12), the first input end (9) and the first isolation end (10) are fixedly arranged at one end, facing away from the output waveguide (2), of the first directional coupler (N1), the first through end (11) and the first coupling end (12) are fixedly arranged at the other end of the first directional coupler (N1), the first input end (9) is fixedly connected with the input E-plane probe (5), a grounding branch (8) is fixedly connected between the first input end (9) and the chip area cavity (3), and the first through end (11) is connected with a first dual-phase modulator (P1); the first coupling end (12) is connected with the second bi-phase modulator (P2), the first isolation end (10) is fixedly connected with a metal fan-shaped short-circuit surface (13) through a second resistor (R1), and a phase difference of 90 degrees is formed between the first through end (11) and the first coupling end (12), so that a phase difference of 90 degrees is formed between the first bi-phase modulator (P1) and the second bi-phase modulator (P2).
6. The GaAs diode-based terahertz vector modulator of claim 5, wherein: the first bi-phase modulator (P1) is composed of a second directional coupler (N2), a first gallium arsenide diode (D1) and a second gallium arsenide diode (D2), four ports are fixedly arranged on the second directional coupler (N2), a second straight-through end (16) and a second coupling end (17) are respectively and fixedly arranged at two ends of one side of the second directional coupler (N2), a second input end (14) and a second isolation end (15) are respectively fixedly arranged at two ends of the other side of the second directional coupler (N2), the second input end (14) is fixedly connected with the first through end (11), the second through end (16) is fixedly connected with the negative electrode of the first gallium arsenide diode (D1), the second coupling end (17) is fixedly connected with the negative electrode of the second gallium arsenide diode (D2), the anodes of the first gallium arsenide diode (D1) and the second gallium arsenide diode (D2) are connected with the feed branch (18); the second isolated port (15) is connected to the first input port (19).
7. The gallium arsenide diode based terahertz vector modulator of claim 6, wherein: the second bi-phase modulator (P2) is structurally identical to the first bi-phase modulator (P1), the second input end (14) of the second bi-phase modulator (P2) is fixedly connected to the first coupling end (12), and the second isolation end (15) of the second bi-phase modulator (P2) is fixedly connected to the second input port (20) of the combiner (W1).
8. The GaAs diode-based terahertz vector modulator of claim 5, wherein: the other end of the output E-surface probe (6) is fixedly connected with the output end (21).
9. The GaAs diode-based terahertz vector modulator of claim 5, wherein: the metal materials of the cavity walls of the input waveguide (1), the output waveguide (2) and the chip area cavity (3) are copper, aluminum or gold; the substrate (7) is made of quartz, gallium nitride, gallium arsenide, indium phosphide or silicon carbide; the metal structure is made of Au; the second resistor (R1) and the first resistor (R2) are made of TaN, NiCr or GaAs.
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| CN202210401856.4A CN114843781B (en) | 2022-04-18 | 2022-04-18 | Terahertz vector modulator based on gallium arsenide diode |
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| CN202210401856.4A CN114843781B (en) | 2022-04-18 | 2022-04-18 | Terahertz vector modulator based on gallium arsenide diode |
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| CN114843781A true CN114843781A (en) | 2022-08-02 |
| CN114843781B CN114843781B (en) | 2023-04-28 |
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| CN202210401856.4A Active CN114843781B (en) | 2022-04-18 | 2022-04-18 | Terahertz vector modulator based on gallium arsenide diode |
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| CN116960596A (en) * | 2023-09-19 | 2023-10-27 | 成都华兴大地科技有限公司 | W-band power synthesizer based on vector modulation |
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| CN116960596A (en) * | 2023-09-19 | 2023-10-27 | 成都华兴大地科技有限公司 | W-band power synthesizer based on vector modulation |
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