CN101882595B - 阻挡层的去除方法和装置 - Google Patents
阻挡层的去除方法和装置 Download PDFInfo
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- CN101882595B CN101882595B CN200910050835.7A CN200910050835A CN101882595B CN 101882595 B CN101882595 B CN 101882595B CN 200910050835 A CN200910050835 A CN 200910050835A CN 101882595 B CN101882595 B CN 101882595B
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- tantalum
- barrier layer
- xenon difluoride
- copper
- etching
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- 238000000034 method Methods 0.000 title claims abstract description 75
- 230000004888 barrier function Effects 0.000 title claims abstract description 72
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims abstract description 57
- 229910052715 tantalum Inorganic materials 0.000 claims abstract description 54
- 229910052802 copper Inorganic materials 0.000 claims abstract description 50
- 239000010949 copper Substances 0.000 claims abstract description 50
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 48
- 238000005530 etching Methods 0.000 claims abstract description 44
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 40
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 40
- 239000010703 silicon Substances 0.000 claims abstract description 40
- BLIQUJLAJXRXSG-UHFFFAOYSA-N 1-benzyl-3-(trifluoromethyl)pyrrolidin-1-ium-3-carboxylate Chemical compound C1C(C(=O)O)(C(F)(F)F)CCN1CC1=CC=CC=C1 BLIQUJLAJXRXSG-UHFFFAOYSA-N 0.000 claims abstract description 36
- 238000005498 polishing Methods 0.000 claims abstract description 33
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 claims abstract description 31
- 239000004065 semiconductor Substances 0.000 claims abstract description 29
- 230000008569 process Effects 0.000 claims abstract description 17
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims abstract description 11
- 239000010936 titanium Substances 0.000 claims abstract description 11
- 229910052719 titanium Inorganic materials 0.000 claims abstract description 11
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 claims abstract description 10
- 238000007517 polishing process Methods 0.000 claims abstract description 9
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 27
- 229910052751 metal Inorganic materials 0.000 claims description 24
- 239000002184 metal Substances 0.000 claims description 24
- 239000003795 chemical substances by application Substances 0.000 claims description 16
- 239000000463 material Substances 0.000 claims description 16
- 238000012545 processing Methods 0.000 claims description 8
- QPJSUIGXIBEQAC-UHFFFAOYSA-N n-(2,4-dichloro-5-propan-2-yloxyphenyl)acetamide Chemical compound CC(C)OC1=CC(NC(C)=O)=C(Cl)C=C1Cl QPJSUIGXIBEQAC-UHFFFAOYSA-N 0.000 claims description 7
- 239000000758 substrate Substances 0.000 claims description 7
- 150000001875 compounds Chemical class 0.000 claims description 6
- 239000007788 liquid Substances 0.000 claims description 4
- 230000003647 oxidation Effects 0.000 claims description 4
- 238000007254 oxidation reaction Methods 0.000 claims description 4
- 238000003672 processing method Methods 0.000 claims description 3
- 238000000059 patterning Methods 0.000 claims 2
- 229910001936 tantalum oxide Inorganic materials 0.000 abstract description 33
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 abstract description 10
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 abstract description 10
- 238000004519 manufacturing process Methods 0.000 abstract description 3
- 239000010410 layer Substances 0.000 description 82
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 36
- 239000007789 gas Substances 0.000 description 30
- 239000010408 film Substances 0.000 description 23
- 239000000243 solution Substances 0.000 description 20
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 15
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 14
- 239000003989 dielectric material Substances 0.000 description 12
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 description 9
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 description 9
- 239000003792 electrolyte Substances 0.000 description 9
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 8
- 239000000126 substance Substances 0.000 description 8
- 238000010586 diagram Methods 0.000 description 7
- PBCFLUZVCVVTBY-UHFFFAOYSA-N tantalum pentoxide Inorganic materials O=[Ta](=O)O[Ta](=O)=O PBCFLUZVCVVTBY-UHFFFAOYSA-N 0.000 description 6
- 238000009792 diffusion process Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 238000001020 plasma etching Methods 0.000 description 5
- 239000002253 acid Substances 0.000 description 4
- 229910052786 argon Inorganic materials 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 4
- 238000004626 scanning electron microscopy Methods 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 3
- 238000011049 filling Methods 0.000 description 3
- 235000006408 oxalic acid Nutrition 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 239000003082 abrasive agent Substances 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 238000002161 passivation Methods 0.000 description 2
- 239000011241 protective layer Substances 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 229910052724 xenon Inorganic materials 0.000 description 2
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 238000006701 autoxidation reaction Methods 0.000 description 1
- 238000001574 biopsy Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 238000001311 chemical methods and process Methods 0.000 description 1
- 238000007385 chemical modification Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 230000005518 electrochemistry Effects 0.000 description 1
- 238000003411 electrode reaction Methods 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 230000000266 injurious effect Effects 0.000 description 1
- 229910052500 inorganic mineral Inorganic materials 0.000 description 1
- 229910052743 krypton Inorganic materials 0.000 description 1
- DNNSSWSSYDEUBZ-UHFFFAOYSA-N krypton atom Chemical compound [Kr] DNNSSWSSYDEUBZ-UHFFFAOYSA-N 0.000 description 1
- 239000002346 layers by function Substances 0.000 description 1
- 210000004072 lung Anatomy 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 239000011707 mineral Substances 0.000 description 1
- 229910052754 neon Inorganic materials 0.000 description 1
- GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 239000012047 saturated solution Substances 0.000 description 1
- 238000005389 semiconductor device fabrication Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 238000005549 size reduction Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000000427 thin-film deposition Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
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- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Weting (AREA)
Abstract
Description
Claims (11)
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
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CN200910050835.7A CN101882595B (zh) | 2009-05-08 | 2009-05-08 | 阻挡层的去除方法和装置 |
CN201410257649.1A CN103985670B (zh) | 2009-05-08 | 2009-05-08 | 阻挡层的去除方法和装置 |
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CN200910050835.7A CN101882595B (zh) | 2009-05-08 | 2009-05-08 | 阻挡层的去除方法和装置 |
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CN201410257649.1A Division CN103985670B (zh) | 2009-05-08 | 2009-05-08 | 阻挡层的去除方法和装置 |
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CN101882595A CN101882595A (zh) | 2010-11-10 |
CN101882595B true CN101882595B (zh) | 2014-07-09 |
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CN200910050835.7A Active CN101882595B (zh) | 2009-05-08 | 2009-05-08 | 阻挡层的去除方法和装置 |
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Cited By (1)
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CN107346731A (zh) * | 2016-05-05 | 2017-11-14 | 盛美半导体设备(上海)有限公司 | 一种减少铜膜厚度的方法 |
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CN103117245A (zh) * | 2011-11-17 | 2013-05-22 | 盛美半导体设备(上海)有限公司 | 空气隙互联结构的形成方法 |
CN103367138B (zh) * | 2012-03-30 | 2018-04-13 | 盛美半导体设备(上海)有限公司 | 二氟化氙气相刻蚀阻挡层的工艺 |
CN103515294B (zh) * | 2012-06-26 | 2018-07-06 | 盛美半导体设备(上海)有限公司 | 钨插塞的制作方法 |
CN103692293B (zh) * | 2012-09-27 | 2018-01-16 | 盛美半导体设备(上海)有限公司 | 无应力抛光装置及抛光方法 |
CN103839876B (zh) * | 2012-11-27 | 2018-05-18 | 盛美半导体设备(上海)有限公司 | 半导体器件的制造方法及装置 |
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CN104143525B (zh) * | 2013-05-09 | 2018-12-18 | 盛美半导体设备(上海)有限公司 | 穿透硅通孔背面金属平坦化方法 |
CN104347481B (zh) * | 2013-07-31 | 2019-10-25 | 盛美半导体设备(上海)有限公司 | 金属镀层处理方法 |
CN104637863A (zh) * | 2013-11-14 | 2015-05-20 | 盛美半导体设备(上海)有限公司 | 钨塞的形成方法 |
CN104637862B (zh) * | 2013-11-14 | 2019-10-18 | 盛美半导体设备(上海)有限公司 | 半导体结构形成方法 |
CN104952787B (zh) * | 2014-03-26 | 2020-03-27 | 盛美半导体设备(上海)股份有限公司 | 径向厚度自动修整方法 |
KR102382706B1 (ko) * | 2015-02-15 | 2022-04-05 | 에이씨엠 리서치 (상하이) 인코포레이티드 | 측벽 리세스를 최소화하는 배리어층 제거 방법 |
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CN109463005B (zh) * | 2016-06-03 | 2023-12-15 | 恩特格里斯公司 | 二氧化铪和二氧化锆的气相蚀刻 |
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CN114752938B (zh) * | 2022-04-07 | 2024-07-16 | 中国科学院赣江创新研究院 | 一种完整去除Nb3Sn超导线稳定层和阻挡层的方法 |
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TW512455B (en) * | 2000-06-16 | 2002-12-01 | Infineon Technologies Corp | Clean method for recessed conductive barriers |
CN1523647A (zh) * | 1998-07-09 | 2004-08-25 | ACM�о���˾ | 电抛光半导体器件上金属互连的装置 |
CN1543668A (zh) * | 2001-08-17 | 2004-11-03 | Acm研究公司 | 使用平面化方法和电解抛光相结合的方法形成半导体结构 |
CN1788330A (zh) * | 2003-03-28 | 2006-06-14 | 反射公司 | 用于微机电系统的阻挡层 |
US7422700B1 (en) * | 2005-06-28 | 2008-09-09 | Novellus Systems, Inc. | Compositions and methods of electrochemical removal of material from a barrier layer of a wafer |
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US5254202A (en) * | 1992-04-07 | 1993-10-19 | International Business Machines Corporation | Fabrication of laser ablation masks by wet etching |
US20040188385A1 (en) * | 2003-03-26 | 2004-09-30 | Kenji Yamada | Etching agent composition for thin films having high permittivity and process for etching |
US7422983B2 (en) * | 2005-02-24 | 2008-09-09 | International Business Machines Corporation | Ta-TaN selective removal process for integrated device fabrication |
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2009
- 2009-05-08 CN CN200910050835.7A patent/CN101882595B/zh active Active
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CN1523647A (zh) * | 1998-07-09 | 2004-08-25 | ACM�о���˾ | 电抛光半导体器件上金属互连的装置 |
TW512455B (en) * | 2000-06-16 | 2002-12-01 | Infineon Technologies Corp | Clean method for recessed conductive barriers |
CN1543668A (zh) * | 2001-08-17 | 2004-11-03 | Acm研究公司 | 使用平面化方法和电解抛光相结合的方法形成半导体结构 |
CN1788330A (zh) * | 2003-03-28 | 2006-06-14 | 反射公司 | 用于微机电系统的阻挡层 |
US7422700B1 (en) * | 2005-06-28 | 2008-09-09 | Novellus Systems, Inc. | Compositions and methods of electrochemical removal of material from a barrier layer of a wafer |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
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CN107346731A (zh) * | 2016-05-05 | 2017-11-14 | 盛美半导体设备(上海)有限公司 | 一种减少铜膜厚度的方法 |
CN107346731B (zh) * | 2016-05-05 | 2021-03-16 | 盛美半导体设备(上海)股份有限公司 | 一种减少铜膜厚度的方法 |
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