CN101853880A - AlGaN/GaN high-electron-mobility transistor and manufacturing method thereof - Google Patents
AlGaN/GaN high-electron-mobility transistor and manufacturing method thereof Download PDFInfo
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Abstract
The invention discloses an AlGaN/GaN high-electron-mobility transistor and a manufacturing method thereof, which relate to the technical field of microelectronics and mainly solve the problems of low working frequency and poor anti-irradiation performance of the transistor. The transistor sequentially comprises a GaN buffer layer, an intrinsic GaN layer, an Al0.3Ga0.7N layer, a GaN capping layer, a source electrode, a drain electrode and a grid electrode according to a growth sequence, wherein transparent ZnO is adopted by the grid electrode, an Ni metal bonding layer is evaporated below the ZnO grid electrode, and SiN protection layers are arranged at both sides. Al2O3 is doped in the ZnO grid electrode, and the length of the ZnO grid electrode is equal to the distance between the source electrode and the drain electrode. The manufacturing process of the transistor sequentially comprises the following steps of: firstly, growing an epitaxial material; then manufacturing the ZnO grid electrode; and finally, manufacturing the source electrode and the drain electrode at both sides of the ZnO grid electrode by utilizing a self-aligning method. The AlGaN/GaN high-electron-mobility transistor has the advantages of high frequency characteristic and good anti-irradiation characteristic and can be used as an electronic component in high-frequency and high-speed circuits.
Description
Technical field
The invention belongs to microelectronics technology, relate to semiconductor device, a kind of specifically structure and implementation method that adopts transparency material ZnO to make the short channel AlGaN/GaN High Electron Mobility Transistor of grid and source leakage self-aligned technology is mainly used in as high speed device and high-frequency element.
Background technology
Compare with the parameter of other semi-conducting materials, the GaN material has tangible advantage, and its energy gap is the wideest, and saturated electrons speed also is better than other semi-conducting materials, and has very big disruptive field intensity and high thermal.Electric charge carrier velocity field characteristic is the basis of device work, high saturated velocity causes big electric current and high-frequency, high disruptive field intensity is most important to the device high-power applications, simultaneously, because the inherent polarization characteristic of GaN sill, just there is high concentration two-dimensional electron gas raceway groove in AlGaN/GaN heterojunction itself, so the GaN material is a preferred material of making high temperature high frequency and high power device.In the power device that the GaN material is fit to make, the AlGaN/GaN High Electron Mobility Transistor is the most representative typical device.Produce first HEMT sample pipe so far from people in 1993, High Electron Mobility Transistor has obtained very big development.The SiC substrate AlGaN/GaN HEMT that people such as calendar year 2001 Vinayak Tilak make has obtained the power density of 10.7W/mm@10GHz and 6.6W/mm@20GHz.Referring to document Moon J S, Micovic M, Janke P, Hashimoto P, et al, " GaN/AlGaN HEMTs operating at20GHz with continuous-wave power density＞6W/mm ", Electron.Lett, 2001,37 (8): 528 and Kumar V, Lu W, Khan F A, et al. " High performance 0.25 μ m.gate-lengthAlGaN/GaN HEMTs on sapphire with transconductance of over 400mS/mm ", Electronics Letters, 2002,38 (5): 252.People developed the SiC substrate AlGaN/GaN HEMT device that power density reaches 11.7W/mm@10GHz afterwards.In the HEMT evolution, it is found that the further raising of AlGaN/GaN HEMT characteristic closely depends on the improvement of material behavior and reducing of device ditch length and dead resistance.
Omit living resistance in order to reduce the source, Ching-Hui Chen et al. has carried out n to the i-GaN source and drain areas
+The regrowth of-GaN, thus source and drain areas and ohmic contact resistance contact reduced.Referring to document Chen C H, Keller S, Parish G, et al, " High-transconductance self-aligned AlGaN/GaNmodulation-doped field-effect transistors with regrown ohmic contacts ", AppliedPhysics Letters, 1998,73 (21): 3147.
Another effective way that reduces dead resistance is for reducing channel length, simultaneously channel length reduce the frequency characteristic that improves the HEMT device is had very important meaning.Channel length is more little, and device speed is fast more, and corresponding frequencies is high more.Short channel device is all obtaining using widely in digital circuit and the high-frequency high-power circuit fast, and therefore, people wish further to reduce the channel length of AlGaN/GaN High Electron Mobility Transistor.In present technological process, most of AlGaN/GaN High Electron Mobility Transistor devices that adopts traditional cover lithography to develop short channel.Though comparatively ripe on the technology, owing to exist alignment precision low, the long yardstick of grid is low, is difficult in and uses also the further high frequency characteristics of boost device under the nanoscale.Lee J.at al. adopts T type grid that the deposit of autoregistration metal has been carried out in the source leakage, thereby obtains the long AlGaN/GaN High Electron Mobility Transistor of 0.25 μ m grid.This device shows turn-off characteristic preferably, is 146mS/mm by measuring mutual conductance Gm, device cut-off frequency f
TBe 38.8GHz, maximum oscillation frequency f
MaxBe 130GHz.With cut-off frequency f
TBe 15GHz, maximum oscillation frequency f
MaxCompare for the non-self-registered technology device of 35GHz, self-registered technology is largely increased the device frequency characteristic.Referring to document Lee J, Liu D, Kim H, et al. " Self-aligned AlGaN/GaN high electron mobility transistors ", Electronics Letters, 2004,40 (19).
Yet the method for this regrowth has been introduced a plurality of additional process steps in the generative process of device, the growth technique of device is complicated, and easily forms defective in former growth and regrowth material interface.Therefore, can the employing source leak the method for injecting impurity and replace the regrowth dopant material.And leak the production order that first grid opisthogenesis that Alignment Method adopts leaks for the source of T type grid, be to improve the Schottky gate characteristic based on 750 ℃ high temperature stress.Yet its Many researchers finds that the high annealing of ohmic contact can have a strong impact on the Schottky gate characteristic, even can make the grid metal finally form ohmic contact, thereby causes the complete actual effect of device technology.
Adopt ZnO to be used as the High Electron Mobility Transistor of gate electrode, can solve the ohmic contact high annealing and contradict this problem with the Schottky gate performance degradation.Simultaneously, can adopt the autoregistration source to leak the manufacture method of injecting again, to the Si of source and drain areas injection high dose, form n type AlGaN, because the heavy doping of source and drain areas can suitably reduce annealing temperature, and form high-quality ohmic contact equally.Lower annealing temperature can not influence the quality of Schottky gate, thereby makes the Schottky gate system have bigger adjusting space.This moment, heavily doped source and drain areas and source-drain electrode can be regarded a conductivity integral as, equated substantially with gate electrode length thereby the actual ditch that obtains is long, had improved the frequency characteristic of device, had improved the radiation-resisting performance of device.
Summary of the invention
The object of the invention is to overcome the shortcoming of above-mentioned prior art, propose a kind of AlGaN/GaN High Electron Mobility Transistor and preparation method thereof,, improve the device frequency characteristic to reduce channel length, improve the radiation-resisting performance of device, make that device is easier to carry out defect analysis.
For achieving the above object, AlGaN/GaN High Electron Mobility Transistor of the present invention comprises the Al of GaN resilient coating, intrinsic GaN layer, 20nm
0.3Ga
0.7The GaN of N layer, 2nm emits layer and source, leakage, gate electrode, and wherein gate electrode adopts transparent ZnO, and the following evaporation of this ZnO gate electrode has the Ni metallic bond coat, and there is the SiN protective layer both sides.
Be doped with Al in the described ZnO gate electrode
2O
3
The length of described ZnO gate electrode equates with distance between source, the drain electrode.
For achieving the above object, AlGaN/GaN High Electron Mobility Transistor manufacture method of the present invention comprises the steps:
(1) on sapphire substrate, utilizes MOCVD technology, successively growing low temperature GaN layer, intrinsic GaN layer, Al
0.3Ga
0.7N layer and GaN layer;
(2) be coated with successively at the Grown GaN material surface and peel off glue and photoresist, and make gate region by lithography;
(3) adopt electron beam evaporation Ni at area of grid, form the thick Ni metal level of 10-30nm;
(4) on the Ni metal level, sputter the thick ZnO layer of 100-300nm, afterwards it is peeled off, form transparent ZnO grizzly bar;
(5) on the substrate surface that contains the ZnO grizzly bar, adopt the technology deposit SiN passivation layer of PECVD;
(6) the SiN passivation layer outside the employing RIE etching technics dry etching ZnO grizzly bar both sides, the isolation side walls of formation ZnO grizzly bar both sides;
(7) be benchmark with ZnO gate electrode, adopt Alignment Method, GaN and Al with side wall
0.3Ga
0.7The N layer carries out Si and injects, and forms the source-drain electrode graphics field of mixing;
(8) adopt electron beam evaporation process,, and carry out 500 ℃ of annealing, form source-drain electrode at the source-drain electrode graph area evaporation metal ohmic contact Ti/Al/Ni/Au that mixes.
The present invention compared with prior art has following advantage:
(1) device of the present invention has been owing to adopted transparent ZnO as gate electrode, thereby can effectively reduce the length of raceway groove, improved the frequency characteristic of device, improved the radiation-resisting performance of device.
(2) device of the present invention has further improved the conductance of ZnO gate electrode because the ZnO gate electrode is carried out the Al doping.
(3) therefore the present invention can realize autoregistration to source and drain areas owing to adopt ZnO as gate electrode, effectively realizes the precision of technology controlling and process, and device channel length and grid length is equated substantially, improves the reliability of device.
Description of drawings
Fig. 1 is the cross-sectional view of device of the present invention;
Fig. 2 is the manufacture craft schematic flow sheet of device of the present invention;
Fig. 3 is the gate electrode manufacture craft flow chart of device of the present invention;
Fig. 4 is the source-drain electrode manufacture craft flow chart of device of the present invention.
With reference to Fig. 1, the orlop of device of the present invention is a Sapphire Substrate, is the Al of GaN resilient coating, intrinsic GaN layer, 20nm on the Sapphire Substrate
0.3Ga
0.7The GaN of N layer and 2nm emits layer, intrinsic GaN layer and Al
0.3Ga
0.7The N interlayer forms two-dimensional electron gas.GaN emits layer to go up evaporation metal Ni layer, and sputter has the transparent ZnO gate electrode that Al mixes on the Ni metal level, and there is the SiN protective layer both sides of gate electrode, and the formation source-drain electrode is evaporated in the outside of these both sides SiN respectively.The length of this ZnO gate electrode equates with distance between source, the drain electrode.
With reference to Fig. 2, the making of device of the present invention provides following three kinds of embodiment.
Embodiment 1, and the making of device of the present invention comprises the steps:
The growth of step 1. epitaxial material.
See figures.1.and.2 being implemented as follows of this step:
(101) on the Sapphire Substrate substrate, utilize MOCVD technology, the growing GaN resilient coating;
(102) on the GaN resilient coating, growth intrinsic GaN layer;
(103) on intrinsic GaN layer, the thick Al of growth 20nm
0.3Ga
0.7The N layer;
(104) at Al
0.3Ga
0.7On the N layer, the thick GaN of growth 2nm emits layer.
Step 2. gate electrode is made.
With reference to Fig. 1 and Fig. 3, being implemented as follows of this step:
(201) make gate electrode figure by lithography at the Grown GaN material surface.For stripping metal better, at first on print, get rid of binder, rotating speed is 8000 commentaries on classics/min, the time is 30s, dries by the fire 20min in temperature is 160 ℃ high temperature oven; And then on this print positive-glue removing, rotating speed is 5000 commentaries on classics/min, at last dries by the fire 10min in temperature is 80 ℃ high temperature oven, photoetching obtains gate electrode figure;
(202) adopt the DQ-500 equipment for burning-off photoresist by plasma to remove the photoresist thin layer that the gate electrode figure district does not develop clean, the rate of finished products of peeling off with raising; Utilize the Ni metal level of VPC-1000 electron beam evaporation equipment deposit 30nm again; The method that adopts magnetron sputtering is to be mixed with 4% Al with target
2O
3ZnO powder carry out the deposit of ZnO gate electrode.At pressure is 3Pa, and underlayer temperature is 270 ℃, and sputtering power is under the condition of 80W, and pre-sputter ZnO electrode 15 minutes to clean target material surface and to make system stability, carries out sputter again in 99.9999% high-purity argon gas atmosphere, form the ZnO gate electrode layer of 100nm;
(203) print is put in the acetone and to be carried out sonicated after soaking more than the 40min, removed the metal level of non-gate region, dry up with nitrogen then;
(204) adopt PECVD equipment that device is carried out surperficial SiN passivation;
At first, print is put into the ultrasonic 2min of acetone, ultrasonic 1min in ethanol washes 1min again in ultra-pure water thereafter, then dries up with nitrogen;
Then, adopt the DQ-500 equipment for burning-off photoresist by plasma that print is carried out counterdie and handle, oxygen flow is 3L/min, and radio-frequency power is 150W, and the aura time is 10 seconds, with watery hydrochloric acid the print surface is handled again, with the ultra-pure water flushing, dries up with nitrogen at last;
At last, sample is put in the cavity of PECVD, feeding content is 2% SiH
4Gas 200sccm, ammonia 3sccm, helium 200sccm is 600mT at pressure, temperature is that deposition thickness is the silicon nitride passivation of 200nm under 250 ℃ the condition;
(205) adopt the RIE dry etching, etching SiN passivation layer, the electrode power that adopts during etching are 50W, and pressure is 5mT, adopt CF
4/ O
2=10: 1 gas ratio carries out etching, forms the isolation side walls protective layer of ZnO grizzly bar and both sides, to reach the side wall protection to the ZnO gate electrode, finishes the making of gate electrode.
Step 3. source-drain electrode is made.
With reference to Fig. 1 and Fig. 4, being implemented as follows of this step:
(301) be benchmark with ZnO gate electrode, adopt Alignment Method, intrinsic GaN and Al with isolation side walls
0.3Ga
0.7The N layer carries out Si
+Inject, substrate temperature is 40 ℃, and implantation dosage is 1 * 10
15/ cm
2, the ion energy of injection is 50keV;
(302) adopt electron beam evaporation source to leak Ohmic electrode:
At first, get rid of binder on print, the rotating speed of whirl coating platform is 8000 commentaries on classics/min, and the time is 30s, puts it into temperature and be in 160 ℃ the high temperature oven to dry by the fire 20min; Positive-glue removing on this print more afterwards, the rotating speed of whirl coating platform is 5000 commentaries on classics/min, and the high temperature oven of putting into temperature and be 80 ℃ dries by the fire 10min, and photoetching obtains the source-drain electrode figure;
Then, adopt the DQ-500 equipment for burning-off photoresist by plasma to remove the photoresist thin layer that graph area is not developed clean, on the source-drain electrode figure, adopt VPC-1100 electron beam evaporation equipment evaporation Ti/Al/Ni/Au as source-drain electrode;
At last, carry out sonicated after putting into the print that evaporates source leakage metal more than the acetone immersion 20min, dry up with nitrogen then, again this print is put in the quick anneal oven afterwards, under air atmosphere, temperature is the high annealing that carries out 10min under 500 ℃ the condition, and ohmic contact is leaked in the formation source, raceway groove is leaked in the source that obtains equating with gate electrode length, finishes element manufacturing.
Embodiment 2, and the making of device of the present invention comprises the steps:
The growth of step 1. epitaxial material.
See figures.1.and.2 being implemented as follows of this step:
(101) on the Sapphire Substrate substrate, utilize MOCVD technology, the growing GaN resilient coating;
(102) on the GaN resilient coating, growth intrinsic GaN layer;
(103) on intrinsic GaN layer, the thick Al of growth 20nm
0.3Ga
0.7The N layer;
(104) at Al
0.3Ga
0.7On the N layer, the thick GaN of growth 2nm emits layer.
Step 2. is made gate electrode.
With reference to Fig. 1 and Fig. 3, being implemented as follows of this step:
(201) make gate electrode figure by lithography at the Grown GaN material surface.For stripping metal better, at first on print, get rid of binder, rotating speed is 8000 commentaries on classics/min, the time is 30s, dries by the fire 20min in temperature is 160 ℃ high temperature oven; And then on this print positive-glue removing, rotating speed is 5000 commentaries on classics/min, at last dries by the fire 10min in temperature is 80 ℃ high temperature oven, photoetching obtains gate electrode figure;
(202) adopt the DQ-500 equipment for burning-off photoresist by plasma to remove the photoresist thin layer that the gate electrode figure district does not develop clean, the rate of finished products of peeling off with raising; Utilize the Ni metal level of VPC-1000 electron beam evaporation equipment deposit 20nm again; The method that adopts magnetron sputtering is to be mixed with 4% Al with target
2O
3ZnO powder carry out the deposit of ZnO gate electrode.At pressure is 1.5Pa, and underlayer temperature is 240 ℃, and sputtering power is under the condition of 50W, and pre-sputter ZnO electrode 15 minutes is to clean target material surface and to make system stability; In 99.9999% high-purity argon gas atmosphere, carry out sputter again, form the ZnO gate electrode layer of 200nm;
(203) print is put in the acetone and to be carried out sonicated after soaking more than the 40min, removed the metal level of non-gate region, dry up with nitrogen then;
(204) adopt PECVD equipment that device is carried out surperficial SiN passivation;
At first, print is put into the ultrasonic 2min of acetone, ultrasonic 1min in ethanol washes 1min again in ultra-pure water thereafter, then dries up with nitrogen;
Then, adopt the DQ-500 equipment for burning-off photoresist by plasma that print is carried out counterdie and handle, oxygen flow is 3L/min, and radio-frequency power is 150W, and the aura time is 10 seconds, with watery hydrochloric acid the print surface is handled again, with the ultra-pure water flushing, dries up with nitrogen at last;
At last, sample is put in the cavity of PECVD, feeding content is 2% SiH
4Gas 200sccm, ammonia 3sccm, helium 200sccm is 600mT at pressure, temperature is that deposition thickness is the silicon nitride passivation of 200nm under 250 ℃ the condition;
(205) adopt the RIE dry etching, etching SiN passivation layer, the electrode power that adopts during etching are 50W, and pressure is 5mT, adopt CF
4/ O
2=10: 1 gas ratio carries out etching, forms the isolation side walls protective layer of ZnO grizzly bar and both sides, to reach the side wall protection to the ZnO gate electrode, finishes the making of gate electrode.
Step 3. source-drain electrode is made.
With reference to Fig. 1 and Fig. 4, being implemented as follows of this step:
(301) be benchmark with ZnO gate electrode, adopt Alignment Method, intrinsic GaN and Al with isolation side walls
0.3Ga
0.7The N layer carries out Si
+Inject, substrate temperature is 40 ℃, and implantation dosage is 5 * 10
15/ cm
2, the ion energy of injection is 50keV;
(302) adopt electron beam evaporation source to leak Ohmic electrode;
At first, get rid of binder on print, the rotating speed of whirl coating platform is 8000 commentaries on classics/min, and the time is 30s, puts it into temperature and be in 160 ℃ the high temperature oven to dry by the fire 20min; Positive-glue removing on this print more afterwards, the rotating speed of whirl coating platform is 5000 commentaries on classics/min, and the high temperature oven of putting into temperature and be 80 ℃ dries by the fire 10min, and photoetching obtains the source-drain electrode figure;
Then, adopt the DQ-500 equipment for burning-off photoresist by plasma to remove the photoresist thin layer that graph area is not developed clean, on the source-drain electrode figure, adopt VPC-1100 electron beam evaporation equipment evaporation Ti/Al/Ni/Au as source-drain electrode;
At last, carry out sonicated after putting into the print that evaporates source leakage metal more than the acetone immersion 20min, dry up with nitrogen then, again this print is put in the quick anneal oven afterwards, under air atmosphere, temperature is the high annealing that carries out 10min under 500 ℃ the condition, and ohmic contact is leaked in the formation source, raceway groove is leaked in the source that obtains equating with gate electrode length, finishes element manufacturing.
Embodiment 3, and the making of device of the present invention comprises the steps:
The growth of step 1. epitaxial material.
See figures.1.and.2 being implemented as follows of this step:
(101) on the Sapphire Substrate substrate, utilize MOCVD technology, the growing GaN resilient coating;
(102) on the GaN resilient coating, growth intrinsic GaN layer;
(103) on intrinsic GaN layer, the thick Al of growth 20nm
0.3Ga
0.7The N layer;
(104) at Al
0.3Ga
0.7On the N layer, the thick GaN of growth 2nm emits layer.
Step 2. gate electrode is made.
With reference to Fig. 1 and Fig. 3, being implemented as follows of this step:
(201) make gate electrode figure by lithography at the Grown GaN material surface.For stripping metal better, at first on print, get rid of binder, rotating speed is 8000 commentaries on classics/min, the time is 30s, dries by the fire 20min in temperature is 160 ℃ high temperature oven; And then on this print positive-glue removing, rotating speed is 5000 commentaries on classics/min, at last dries by the fire 10min in temperature is 80 ℃ high temperature oven, photoetching obtains gate electrode figure;
(202) adopt the DQ-500 equipment for burning-off photoresist by plasma to remove the photoresist thin layer that the gate electrode figure district does not develop clean, the rate of finished products of peeling off with raising; Utilize the Ni metal level of VPC-1000 electron beam evaporation equipment deposit 10nm again; The method that adopts magnetron sputtering is to be mixed with 4% Al with target
2O
3ZnO powder carry out the deposit of ZnO gate electrode.At pressure is 1Pa, and underlayer temperature is 220 ℃, and sputtering power is under the condition of 30W, and pre-sputter ZnO electrode 15 minutes to clean target material surface and to make system stability, carries out sputter again in 99.9999% high-purity argon gas atmosphere, form the ZnO gate electrode layer of 400nm;
(203) print is put in the acetone and to be carried out sonicated after soaking more than the 40min, removed the metal level of non-gate region, dry up with nitrogen then;
(204) adopt PECVD equipment that device is carried out surperficial SiN passivation;
At first, print is put into the ultrasonic 2min of acetone, ultrasonic 1min in ethanol washes 1min again in ultra-pure water thereafter, then dries up with nitrogen;
Then, adopt the DQ-500 equipment for burning-off photoresist by plasma that print is carried out counterdie and handle, oxygen flow is 3L/min, and radio-frequency power is 150W, and the aura time is 10 seconds, with watery hydrochloric acid the print surface is handled again, with the ultra-pure water flushing, dries up with nitrogen at last;
At last, sample is put in the cavity of PECVD, feeding content is 2% SiH
4Gas 200sccm, ammonia 3sccm, helium 200sccm is 600mT at pressure, temperature is that deposition thickness is the silicon nitride passivation of 200nm under 250 ℃ the condition;
(205) adopt the RIE dry etching, etching SiN passivation layer, the electrode power that adopts during etching are 50W, and pressure is 5mT, adopt CF
4/ O
2=10: 1 gas ratio carries out etching, forms the isolation side walls protective layer of ZnO grizzly bar and both sides, to reach the side wall protection to the ZnO gate electrode, finishes the making of gate electrode.
Step 3. source-drain electrode is made.
With reference to Fig. 1 and Fig. 4, being implemented as follows of this step:
(301) be benchmark with ZnO gate electrode, adopt Alignment Method, intrinsic GaN and Al with isolation side walls
0.3Ga
0.7The N layer carries out Si
+Inject, substrate temperature is 40 ℃, and implantation dosage is 9 * 10
15/ cm
2, the ion energy of injection is 50keV;
(302) adopt electron beam evaporation source to leak Ohmic electrode;
At first, get rid of binder on print, the rotating speed of whirl coating platform is 8000 commentaries on classics/min, and the time is 30s, puts it into temperature and be in 160 ℃ the high temperature oven to dry by the fire 20min; Positive-glue removing on this print more afterwards, the rotating speed of whirl coating platform is 5000 commentaries on classics/min, and the high temperature oven of putting into temperature and be 80 ℃ dries by the fire 10min, and photoetching obtains the source-drain electrode figure;
Then, adopt the DQ-500 equipment for burning-off photoresist by plasma to remove the photoresist thin layer that graph area is not developed clean, on the source-drain electrode figure, adopt VPC-1100 electron beam evaporation equipment evaporation Ti/Al/Ni/Au as source-drain electrode;
At last, carry out sonicated after putting into the print that evaporates source leakage metal more than the acetone immersion 20min, dry up with nitrogen then, again this print is put in the quick anneal oven afterwards, under air atmosphere, temperature is the high annealing that carries out 10min under 500 ℃ the condition, and ohmic contact is leaked in the formation source, raceway groove is leaked in the source that obtains equating with gate electrode length, finishes element manufacturing.
Claims (5)
1. an AlGaN/GaN High Electron Mobility Transistor comprises GaN resilient coating, intrinsic GaN layer, Al
0.3Ga
0.7N layer, GaN emit layer and source, leakage, gate electrode, it is characterized in that gate electrode adopts transparent ZnO, and the following evaporation of this ZnO gate electrode has the Ni metallic bond coat, and there is the SiN protective layer both sides.
2. AlGaN/GaN High Electron Mobility Transistor according to claim 1 is characterized in that being doped with Al in the ZnO gate electrode
2O
3
3. AlGaN/GaN High Electron Mobility Transistor according to claim 1 is characterized in that the length of ZnO gate electrode equates with distance between source, the drain electrode.
4. the manufacture method of an AlGaN/GaN High Electron Mobility Transistor comprises the steps:
(1) on sapphire substrate, utilizes MOCVD technology, successively growing GaN resilient coating, intrinsic GaN layer, Al
0.3Ga
0.7N layer and GaN emit layer;
(2) emit laminar surface to be coated with successively in Grown GaN and peel off glue and photoresist, and make gate region by lithography;
(3) adopt electron beam evaporation Ni at area of grid, form the thick Ni metal level of 10-30nm;
(4) on the Ni metal level, sputter the thick ZnO layer of 100-400nm, afterwards it is peeled off, form transparent ZnO grizzly bar;
(5) on the substrate surface that contains the ZnO grizzly bar, adopt the technology deposit SiN passivation layer of PECVD;
(6) the SiN passivation layer outside the employing RIE etching technics dry etching ZnO grizzly bar both sides, the isolation side walls protective layer of formation ZnO grizzly bar both sides;
(7) be benchmark with ZnO gate electrode, adopt Alignment Method, GaN is emitted layer and Al with side wall
0.3Ga
0.7It is 1-9 * 10 that the N layer carries out dosage
15/ cm
2Si
+Inject, form the source-drain electrode graphics field of mixing;
(8) adopt electron beam evaporation process,, and carry out 500 ℃ of annealing, form source-drain electrode at the source-drain electrode graph area evaporation metal ohmic contact Ti/Al/Ni/Au that mixes.
5. AlGaN/GaN insulated-gate electron mobility transistor manufacture method according to claim 4, wherein step (4) is described on the Ni metal level, and sputter one deck is mixed 4% Al
2O
3ZnO film, be adopt magnetron sputtering method with target for being mixed with 2%Al
2O
3ZnO powder, be 1-3Pa at pressure, underlayer temperature is 220-270 ℃, sputtering power is under the condition of 30-80W, pre-sputter ZnO15 minute, with the cleaning target material surface with make system stability; In 99.9999% high-purity argon gas atmosphere, carry out sputter again, form the thick ZnO gate electrode layer of 100-400nm.
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Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102938413A (en) * | 2012-11-21 | 2013-02-20 | 西安电子科技大学 | Algan/gan heterojunction enhanced device and manufacturing method thereof |
| CN102945860A (en) * | 2012-11-21 | 2013-02-27 | 西安电子科技大学 | AlGaN/GaN heterojunction enhancement-mode device with in-situ SiN cap layer and production method thereof |
| CN103219239A (en) * | 2013-03-27 | 2013-07-24 | 中国电子科技集团公司第五十五研究所 | Method for manufacturing AlGaN/GaN HEMT (High Electron Mobility Transistor) with high thermal stability |
| CN103715255A (en) * | 2013-12-04 | 2014-04-09 | 中国电子科技集团公司第五十五研究所 | Self-aligned gate GaN HEMT device and preparation method thereof |
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| CN108400171A (en) * | 2018-03-07 | 2018-08-14 | 西安电子科技大学 | Low resistance state gallium-nitride-based devices and preparation method thereof based on thermal annealing doping process |
| CN112380659A (en) * | 2020-11-11 | 2021-02-19 | 天津大学 | GaN HEMT equivalent circuit topological structure based on novel resistance model |
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