CN101842868B - 制造经处理表面的方法和真空等离子体源 - Google Patents
制造经处理表面的方法和真空等离子体源 Download PDFInfo
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- CN101842868B CN101842868B CN2007801014029A CN200780101402A CN101842868B CN 101842868 B CN101842868 B CN 101842868B CN 2007801014029 A CN2007801014029 A CN 2007801014029A CN 200780101402 A CN200780101402 A CN 200780101402A CN 101842868 B CN101842868 B CN 101842868B
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/54—Controlling or regulating the coating process
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/0021—Reactive sputtering or evaporation
- C23C14/0036—Reactive sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/228—Gas flow assisted PVD deposition
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
- C23C14/351—Sputtering by application of a magnetic field, e.g. magnetron sputtering using a magnetic field in close vicinity to the substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32055—Arc discharge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32458—Vessel
- H01J37/32477—Vessel characterised by the means for protecting vessels or internal parts, e.g. coatings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32532—Electrodes
- H01J37/32541—Shape
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Materials Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Plasma Technology (AREA)
- Liquid Crystal (AREA)
- Chemical Vapour Deposition (AREA)
- Physical Vapour Deposition (AREA)
- Physical Or Chemical Processes And Apparatus (AREA)
Abstract
Description
Claims (36)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/EP2007/061805 WO2009056173A1 (en) | 2007-11-01 | 2007-11-01 | Method for manufacturing a treated surface and vacuum plasma sources |
Publications (2)
Publication Number | Publication Date |
---|---|
CN101842868A CN101842868A (zh) | 2010-09-22 |
CN101842868B true CN101842868B (zh) | 2012-12-26 |
Family
ID=39580089
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2007801014029A Active CN101842868B (zh) | 2007-11-01 | 2007-11-01 | 制造经处理表面的方法和真空等离子体源 |
Country Status (10)
Country | Link |
---|---|
US (1) | US9376747B2 (zh) |
EP (2) | EP2267756B1 (zh) |
JP (1) | JP5311263B2 (zh) |
KR (2) | KR20150011014A (zh) |
CN (1) | CN101842868B (zh) |
BR (1) | BRPI0722169A2 (zh) |
MX (1) | MX2010004854A (zh) |
RU (1) | RU2479885C2 (zh) |
TW (1) | TW200939896A (zh) |
WO (1) | WO2009056173A1 (zh) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
ES2749354T3 (es) | 2009-09-25 | 2020-03-19 | Oerlikon Surface Solutions Ag Pfaeffikon | Procedimiento para la preparación de capas de óxido de zirconio cúbicas |
JP2012193410A (ja) * | 2011-03-16 | 2012-10-11 | Japan Steel Works Ltd:The | スパッタ装置 |
DE102011112759A1 (de) * | 2011-09-08 | 2013-03-14 | Oerlikon Trading Ag, Trübbach | Plasmaquelle |
WO2016172962A1 (en) * | 2015-04-30 | 2016-11-03 | SZ DJI Technology Co., Ltd. | System and method for landing a mobile platform via a magnetic field |
CN109207966A (zh) * | 2018-10-23 | 2019-01-15 | 杭州海莱德智能科技有限公司 | 一种积木式平板pecvd镀膜系统 |
CN113169025A (zh) * | 2018-12-21 | 2021-07-23 | 瑞士艾发科技 | 用于真空等离子体处理至少一个衬底或用于制造衬底的真空处理设备和方法 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5605637A (en) * | 1994-12-15 | 1997-02-25 | Applied Materials Inc. | Adjustable dc bias control in a plasma reactor |
JP2002173768A (ja) * | 2000-08-18 | 2002-06-21 | Tokyo Electron Ltd | プラズマ密度改良のための埋込み式プラズマ源 |
US20070034501A1 (en) * | 2005-08-09 | 2007-02-15 | Efim Bender | Cathode-arc source of metal/carbon plasma with filtration |
Family Cites Families (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US649500A (en) * | 1899-11-02 | 1900-05-15 | Otto Weinfurt | Shade-cord. |
US4038171A (en) * | 1976-03-31 | 1977-07-26 | Battelle Memorial Institute | Supported plasma sputtering apparatus for high deposition rate over large area |
FR2572847B1 (fr) * | 1984-11-06 | 1986-12-26 | Commissariat Energie Atomique | Procede et dispositif d'allumage d'une source d'ions hyperfrequence |
JPH0211754A (ja) | 1988-06-29 | 1990-01-16 | Nippon Sheet Glass Co Ltd | 真空成膜装置 |
JP2718731B2 (ja) | 1988-12-21 | 1998-02-25 | 株式会社神戸製鋼所 | 真空アーク蒸着装置及び真空アーク蒸着方法 |
US5268056A (en) | 1990-05-31 | 1993-12-07 | Matsushita Electric Industrial Co., Ltd. | Plasma surface treating method and apparatus |
DE4306611B4 (de) | 1993-03-03 | 2004-04-15 | Unaxis Deutschland Holding Gmbh | Vorrichtung zur Oberflächenbehandlung von Substraten durch Plasmaeinwirkung |
JPH07300670A (ja) | 1994-04-28 | 1995-11-14 | Sumitomo Heavy Ind Ltd | プラズマを用いたスパッタリング装置 |
JPH08232064A (ja) * | 1995-02-24 | 1996-09-10 | Hitachi Ltd | 反応性マグネトロンスパッタ装置 |
US5518597A (en) | 1995-03-28 | 1996-05-21 | Minnesota Mining And Manufacturing Company | Cathodic arc coating apparatus and method |
US6010636A (en) * | 1995-12-29 | 2000-01-04 | Lam Research Corporation | Electrode with domes for plasma focusing |
JP2868120B2 (ja) * | 1997-06-11 | 1999-03-10 | 川崎重工業株式会社 | 電子ビーム励起プラズマ発生装置 |
JP3685670B2 (ja) | 1999-12-03 | 2005-08-24 | 松下電器産業株式会社 | Dcスパッタリング装置 |
DE10060002B4 (de) * | 1999-12-07 | 2016-01-28 | Komatsu Ltd. | Vorrichtung zur Oberflächenbehandlung |
US6495000B1 (en) * | 2001-07-16 | 2002-12-17 | Sharp Laboratories Of America, Inc. | System and method for DC sputtering oxide films with a finned anode |
US7166199B2 (en) * | 2002-12-18 | 2007-01-23 | Cardinal Cg Company | Magnetron sputtering systems including anodic gas distribution systems |
RU2252117C2 (ru) * | 2003-03-31 | 2005-05-20 | ОАО "НПО Энергомаш им. акад. В.П. Глушко" | Способ наплавки меди или медных сплавов на подложку из высоколегированных никелевых сплавов |
US6967305B2 (en) * | 2003-08-18 | 2005-11-22 | Mks Instruments, Inc. | Control of plasma transitions in sputter processing systems |
US7879209B2 (en) | 2004-08-20 | 2011-02-01 | Jds Uniphase Corporation | Cathode for sputter coating |
US9997338B2 (en) | 2005-03-24 | 2018-06-12 | Oerlikon Surface Solutions Ag, Pfäffikon | Method for operating a pulsed arc source |
TW200814170A (en) * | 2006-09-13 | 2008-03-16 | Ind Tech Res Inst | Method of adjusting surface characteristic of a substrate |
US7850828B2 (en) * | 2006-09-15 | 2010-12-14 | Cardinal Cg Company | Enhanced virtual anode |
-
2007
- 2007-11-01 MX MX2010004854A patent/MX2010004854A/es active IP Right Grant
- 2007-11-01 EP EP10178841.2A patent/EP2267756B1/en active Active
- 2007-11-01 WO PCT/EP2007/061805 patent/WO2009056173A1/en active Application Filing
- 2007-11-01 KR KR1020147036790A patent/KR20150011014A/ko not_active Application Discontinuation
- 2007-11-01 RU RU2010122060/07A patent/RU2479885C2/ru not_active IP Right Cessation
- 2007-11-01 BR BRPI0722169-0A2A patent/BRPI0722169A2/pt not_active IP Right Cessation
- 2007-11-01 KR KR1020107012035A patent/KR20100094492A/ko active Search and Examination
- 2007-11-01 CN CN2007801014029A patent/CN101842868B/zh active Active
- 2007-11-01 EP EP07822148.8A patent/EP2206138B8/en active Active
- 2007-11-01 JP JP2010531421A patent/JP5311263B2/ja active Active
- 2007-11-01 US US12/740,456 patent/US9376747B2/en active Active
-
2008
- 2008-10-24 TW TW097140871A patent/TW200939896A/zh unknown
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5605637A (en) * | 1994-12-15 | 1997-02-25 | Applied Materials Inc. | Adjustable dc bias control in a plasma reactor |
JP2002173768A (ja) * | 2000-08-18 | 2002-06-21 | Tokyo Electron Ltd | プラズマ密度改良のための埋込み式プラズマ源 |
US20070034501A1 (en) * | 2005-08-09 | 2007-02-15 | Efim Bender | Cathode-arc source of metal/carbon plasma with filtration |
Also Published As
Publication number | Publication date |
---|---|
EP2206138B8 (en) | 2017-07-12 |
BRPI0722169A2 (pt) | 2014-04-08 |
EP2267756A1 (en) | 2010-12-29 |
CN101842868A (zh) | 2010-09-22 |
EP2206138A1 (en) | 2010-07-14 |
KR20150011014A (ko) | 2015-01-29 |
JP5311263B2 (ja) | 2013-10-09 |
TW200939896A (en) | 2009-09-16 |
JP2011502215A (ja) | 2011-01-20 |
US20100291320A1 (en) | 2010-11-18 |
US9376747B2 (en) | 2016-06-28 |
EP2267756B1 (en) | 2015-03-04 |
RU2010122060A (ru) | 2011-12-10 |
MX2010004854A (es) | 2010-06-11 |
EP2206138B1 (en) | 2017-03-22 |
RU2479885C2 (ru) | 2013-04-20 |
KR20100094492A (ko) | 2010-08-26 |
WO2009056173A1 (en) | 2009-05-07 |
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Legal Events
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PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
CP01 | Change in the name or title of a patent holder | ||
CP01 | Change in the name or title of a patent holder |
Address after: Swiss Teru Bach Patentee after: OERLIKON TRADING AG, TRuBBACH Address before: Swiss Teru Bach Patentee before: OERLIKON TRADING AG, TRuBBACH Address after: Swiss Teru Bach Patentee after: OERLIKON SURFACE SOLUTIONS AG, PFAFFIKON Address before: Swiss Teru Bach Patentee before: OERLIKON TRADING AG, TRuBBACH |
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CP02 | Change in the address of a patent holder | ||
CP02 | Change in the address of a patent holder |
Address after: Swiss hole Patentee after: OERLIKON SURFACE SOLUTIONS AG, PFAFFIKON Address before: Swiss Teru Bach Patentee before: OERLIKON SURFACE SOLUTIONS AG, PFAFFIKON |