CN101834163A - Semiconductor flip-chip bonding packaging heat radiation improved structure - Google Patents
Semiconductor flip-chip bonding packaging heat radiation improved structure Download PDFInfo
- Publication number
- CN101834163A CN101834163A CN 201010163353 CN201010163353A CN101834163A CN 101834163 A CN101834163 A CN 101834163A CN 201010163353 CN201010163353 CN 201010163353 CN 201010163353 A CN201010163353 A CN 201010163353A CN 101834163 A CN101834163 A CN 101834163A
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- China
- Prior art keywords
- chip
- heat radiation
- improved structure
- chip bonding
- semiconductor flip
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16245—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
Abstract
The invention relates to a semiconductor flip-chip bonding packaging heat radiation improved structure comprising a chip, an electrical interconnection material, a lead frame, an encapsulation material and a spring heat radiator, wherein the lead frame is provided with a transmission pin; the electrical interconnection material is implanted at the front face of the chip which is arranged on the transmission pin in an inversion way; the encapsulation material encapsulates the spring heat radiator, the chip, the electrical interconnection material and the lead frame to form an encapsulation body, the periphery of the spring heat radiator is fixed by the encapsulation material, one end of the spring heat radiator is connected with the chip and the other end exposes out of the surface of the encapsulation body so as to radiate the heat of the chip out of the encapsulation body, thereby solving the heat radiation problem for a load-bearing base without a mostly-exposed chip or flip-chip packaging and greatly enhancing electric and thermal performances and reliability of the product.
Description
Technical field
The present invention relates to the radiator structure in semiconductor packaging field, particularly relate to a kind of semiconductor flip-chip bonding packaging heat radiation improved structure.
Background technology
Traditional semiconductor chip flip chip bonding packaging structure conducts the heat of chip mostly by loading plate, mainly can have the following disadvantages:
1, in the traditional semiconductor chip flip chip bonding packaging structure, chip-suspension is on loading plate, and the chip that poises is difficult to heat is fully shed, and then has influence on the electric heating property and the reliability of final products.
2, traditional semiconductor lead frame formula encapsulates, the metal loading plate that sees through mostly in the packaging body conducts the heat that chip produces, increase the loading plate area in order to satisfy high radiating requirements, can be easy to generate on the one hand integrity problems such as stress-retained, layering because of the difference of coefficient of thermal expansion between unlike material; Do not meet the more and more compact trend development requirement of semiconductor package body on the other hand yet.
3, traditional semiconductor package, also there is mode to improve radiating effect by selecting high heat conduction plastic packaging material for use, and high heat conduction plastic packaging material the control of product plastic package process is also had higher requirement, and radiating effect is not obvious except high cost price own.
Summary of the invention
Technical problem to be solved by this invention provides a kind of semiconductor flip-chip bonding packaging heat radiation improved structure, makes that the thermal diffusivity of semiconductor packages radiator structure is strong, simple in structure, heat-dissipating space utilance height, applicability be strong.
The technical solution adopted for the present invention to solve the technical problems is: a kind of semiconductor flip-chip bonding packaging heat radiation improved structure is provided, comprises chip, electric interconnecting material, lead frame and plastic packaging material, also comprise the spring radiator in the described packaging heat dissipation improved structure; Described lead frame is provided with the transmission pin; The front of described chip is implanted with described electric interconnecting material, and upside-down mounting is on described transmission pin; The described spring radiator of described plastic packaging material plastic packaging, chip, electric interconnecting material and lead frame, form plastic-sealed body, fixed by described plastic packaging material around the described spring radiator, the one end links to each other with described chip, and the other end is exposed to described plastic-sealed body surface.
The spring radiator of described semiconductor flip-chip bonding packaging heat radiation improved structure is flexible structure or elastic construction.
The spring radiator of described semiconductor flip-chip bonding packaging heat radiation improved structure changes contact area and the contact shape that links to each other and hold with chip according to the size of chip with radiating requirements.
One end of the spring radiator of described semiconductor flip-chip bonding packaging heat radiation improved structure links to each other with described chip by bonding material.
The electric interconnecting material of described semiconductor flip-chip bonding packaging heat radiation improved structure is tin ball or copper post or au bump or alloy bump.
The spring radiator of described semiconductor flip-chip bonding packaging heat radiation improved structure is exposed on the end on plastic-sealed body surface and is welded with external connection radiating device.
Post passive device on the lead frame of described semiconductor flip-chip bonding packaging heat radiation improved structure; Described passive device is resistance or electric capacity or inductance or crystal oscillator.
Beneficial effect
Owing to adopted above-mentioned technical scheme, the present invention compared with prior art has following advantage and good effect:
1, built-in spring radiator has increased the area of dissipation of chip greatly, and chip was become by carrying the two-sided radiator structure of chip that base and spring radiator dispel the heat simultaneously by original single face radiator structure by the heat conduction of carrying base.
2, having solved some does not have sheet to expose the heat radiation difficult problem of chip bearing base or Flip-Chip Using, has improved electric heating property and the reliability of product greatly.
3, the structure of the built-in spring radiator of packaging body makes packaging body realize good heat-radiation effect in original space, has satisfied the compact trend requirement of semiconductor packages.
4, the telescopic spring characteristic of spring radiator makes it possess certain versatility in the product of different package thickness, and the raising of applicability has also reduced the die sinking cost of spring radiator.
5, the flexible structure of spring radiator itself makes it have very strong flexibility on height space, compare with non-compressibility metal derby of tradition or sheet metal radiator structure, the flexible structure of spring can not cause the weighing wounded of chip because of encapsulating height tolerance in each link, and the stress absorption function that spring is good more helps the raising of product reliability.
6, an end that is exposed to plastic-sealed body at the spring radiator can add the large-scale external connection radiating device of weldering, has satisfied the superelevation heat radiation requirement of high-power product.
7, in encapsulating structure, add passive device, make encapsulating structure more compact, have the high system integration advantage of packaging density.
Description of drawings
Fig. 1 is the profile of semiconductor flip-chip bonding packaging heat radiation improved structure of the present invention;
Fig. 2 is the schematic diagram of semiconductor flip-chip bonding packaging heat radiation improved structure medi-spring radiator of the present invention;
Fig. 3 is the product schematic diagram that is welded with external connection radiating device in the semiconductor flip-chip bonding packaging heat radiation improved structure of the present invention;
Fig. 4 is the product schematic diagram that posts passive device in the semiconductor flip-chip bonding packaging heat radiation improved structure of the present invention;
Fig. 5 is the product schematic diagram that posts passive device in the semiconductor flip-chip bonding packaging heat radiation improved structure of the present invention and be welded with external connection radiating device.
Embodiment
Below in conjunction with specific embodiment, further set forth the present invention.Should be understood that these embodiment only to be used to the present invention is described and be not used in and limit the scope of the invention.Should be understood that in addition those skilled in the art can make various changes or modifications the present invention after the content of having read the present invention's instruction, these equivalent form of values fall within the application's appended claims institute restricted portion equally.
Embodiments of the present invention relate to a kind of semiconductor flip-chip bonding packaging heat radiation improved structure, as shown in Figure 1, comprise chip 2, electric interconnecting material 3, lead frame 4 and plastic packaging material 6, also comprise spring radiator 1 in the described packaging heat dissipation improved structure; Described lead frame 4 is provided with transmission pin 5; The front of described chip 2 is implanted with electric interconnecting material 3, and upside-down mounting is on described transmission pin 5, and wherein, electric interconnecting material 3 is tin ball or copper post or au bump or alloy bump.The described spring radiator 1 of described plastic packaging material 6 plastic packagings, chip 2, electric interconnecting material 3 and lead frame 4, form plastic-sealed body, fixed by described plastic packaging material 6 around the described spring radiator 1, the one end links to each other with described chip 2, the other end is exposed to described plastic-sealed body surface, and as shown in Figure 1, the lower surface of spring radiator 1 is bonded at the back side of chip 2, its upper surface is exposed to the plastic-sealed body surface, so that the heat of chip 2 is shed outside the plastic-sealed body.
Shown in Figure 2 is the structural representation of spring radiator 1, situation in the time of can using according to reality is selected the spring radiator of various difformities, area and volume for use, promptly determine that according to concrete product needed the spring radiator adopts the elastic construction of helix form, still adopt folding elastic construction, or adopt the lift structure of Z word, the contact area that changes spring radiator and chip according to the size and the radiating requirements of chip and the height and the number of plies of contact shape and spring radiator.Because the telescopic spring characteristic of spring radiator itself make it possess certain versatility in the product of different package thickness, thereby the raising of applicability has reduced the die sinking cost of spring radiator; Simultaneously, the flexible structure of spring itself makes it have very strong flexibility on height space, compare with non-compressibility metal derby of tradition or sheet metal radiator structure, can not cause the weighing wounded of chip because of encapsulating height tolerance in each link, the stress absorption function that spring is good helps the raising of product reliability.
An end that is exposed to described plastic-sealed body surface at spring radiator 1 can also add weldering external connection radiating device 7, as shown in Figure 3, owing to be welded with external connection radiating device 7 at the upper surface of spring radiator 1, therefore can satisfy the superelevation heat radiation requirement of high-power product.On described lead frame 4, can also post passive device 8, as shown in Figure 4, described passive device 8 is resistance or electric capacity or inductance or crystal oscillator, owing to be added with passive device 8 in encapsulating structure, make encapsulating structure more compact, have the high system integration advantage of packaging density.The present invention can add at the end that spring radiator 1 is exposed to described plastic-sealed body surface in the weldering external connection radiating device 7, and posts passive device 8 on described lead frame 4, satisfies the package requirements of the superelevation heat radiation and the system integration simultaneously, as shown in Figure 5.
Be not difficult to find, the present invention adopts built-in spring radiator, increased the area of dissipation of chip greatly, make chip by originally only depending on the mode of dispelling the heat that simultaneously links to each other to become the mode that relies on carrying base and spring radiator to carry out two-sided heat radiation simultaneously with the carrying base, do not expose the heat radiation difficult problem of chip bearing base or Flip-Chip Using thereby solved some, improved the electric heating property and the reliability of product greatly; In addition, the structure of the built-in spring radiator of packaging body makes packaging body realize good heat-radiation effect in original space, has satisfied the compact trend requirement of semiconductor packages.
Claims (6)
1. a semiconductor flip-chip bonding packaging heat radiation improved structure comprises chip (2), electric interconnecting material (3), lead frame (4) and plastic packaging material (6), it is characterized in that, also comprises spring radiator (1) in the described packaging heat dissipation improved structure; Described lead frame (4) is provided with transmission pin (5); The front of described chip (2) is implanted with described electric interconnecting material (3), and upside-down mounting is on described transmission pin (5); The described spring radiator of described plastic packaging material (6) plastic packaging (1), chip (2), electric interconnecting material (3) and lead frame (4), form plastic-sealed body, described spring radiator (1) is fixing by described plastic packaging material (6) on every side, the one end links to each other with described chip (2), and the other end is exposed to described plastic-sealed body surface.
2. semiconductor flip-chip bonding packaging heat radiation improved structure according to claim 1 is characterized in that, described spring radiator (1) is flexible structure or elastic construction.
3. semiconductor flip-chip bonding packaging heat radiation improved structure according to claim 1 is characterized in that, described spring radiator (1) changes contact area and the contact shape that links to each other and hold with chip (2) according to the size of chip (2) with radiating requirements.
4. semiconductor flip-chip bonding packaging heat radiation improved structure according to claim 1 is characterized in that, described electric interconnecting material (3) is tin ball or copper post or au bump or alloy bump.
5. semiconductor flip-chip bonding packaging heat radiation improved structure according to claim 1 is characterized in that, described spring radiator (1) is exposed on the end on plastic-sealed body surface and is welded with external connection radiating device (7).
6. according to claim 1 or 6 described semiconductor flip-chip bonding packaging heat radiation improved structures, it is characterized in that, post passive device (8) on the described lead frame (4); Described passive device (8) is resistance or electric capacity or inductance or crystal oscillator.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201010163353 CN101834163A (en) | 2010-04-29 | 2010-04-29 | Semiconductor flip-chip bonding packaging heat radiation improved structure |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201010163353 CN101834163A (en) | 2010-04-29 | 2010-04-29 | Semiconductor flip-chip bonding packaging heat radiation improved structure |
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| CN101834163A true CN101834163A (en) | 2010-09-15 |
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| CN 201010163353 Pending CN101834163A (en) | 2010-04-29 | 2010-04-29 | Semiconductor flip-chip bonding packaging heat radiation improved structure |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102263078A (en) * | 2011-06-13 | 2011-11-30 | 西安天胜电子有限公司 | WLCSP (Wafer Level Chip Scale Package) packaging component |
| CN104465551A (en) * | 2014-12-26 | 2015-03-25 | 江苏长电科技股份有限公司 | Packaging structure capable of achieving electricity property and heat dissipation through mechanical press mode and process method |
| WO2017071418A1 (en) * | 2015-10-30 | 2017-05-04 | 杰群电子科技（东莞）有限公司 | Semiconductor device and manufacturing method therefor |
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| EP0717440A2 (en) * | 1994-12-15 | 1996-06-19 | Hitachi, Ltd. | Cooling device of multi-chip module |
| DE19925983A1 (en) * | 1999-06-08 | 2000-12-14 | Bosch Gmbh Robert | Heat sink for dissipating heat losses from electronic component has contact surface with component equal in area to that of component surface |
| CN2591771Y (en) * | 2002-12-11 | 2003-12-10 | 华腾微电子（上海）有限公司 | Structure of upside-down mounting sheet type packaged internal memory chip |
| CN1641865A (en) * | 2004-01-09 | 2005-07-20 | 日月光半导体制造股份有限公司 | Flip chip packaging body |
| CN1665023A (en) * | 2004-03-04 | 2005-09-07 | 松下电器产业株式会社 | Resin-encapsulated semiconductor device and lead frame, and method for manufacturing the same |
-
2010
- 2010-04-29 CN CN 201010163353 patent/CN101834163A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0717440A2 (en) * | 1994-12-15 | 1996-06-19 | Hitachi, Ltd. | Cooling device of multi-chip module |
| DE19925983A1 (en) * | 1999-06-08 | 2000-12-14 | Bosch Gmbh Robert | Heat sink for dissipating heat losses from electronic component has contact surface with component equal in area to that of component surface |
| CN2591771Y (en) * | 2002-12-11 | 2003-12-10 | 华腾微电子（上海）有限公司 | Structure of upside-down mounting sheet type packaged internal memory chip |
| CN1641865A (en) * | 2004-01-09 | 2005-07-20 | 日月光半导体制造股份有限公司 | Flip chip packaging body |
| CN1665023A (en) * | 2004-03-04 | 2005-09-07 | 松下电器产业株式会社 | Resin-encapsulated semiconductor device and lead frame, and method for manufacturing the same |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102263078A (en) * | 2011-06-13 | 2011-11-30 | 西安天胜电子有限公司 | WLCSP (Wafer Level Chip Scale Package) packaging component |
| CN104465551A (en) * | 2014-12-26 | 2015-03-25 | 江苏长电科技股份有限公司 | Packaging structure capable of achieving electricity property and heat dissipation through mechanical press mode and process method |
| CN104465551B (en) * | 2014-12-26 | 2017-12-01 | 江苏长电科技股份有限公司 | Mechanical press mode realizes the encapsulating structure and process electrically and to radiate |
| WO2017071418A1 (en) * | 2015-10-30 | 2017-05-04 | 杰群电子科技（东莞）有限公司 | Semiconductor device and manufacturing method therefor |
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| C53 | Correction of patent for invention or patent application | ||
| CB03 | Change of inventor or designer information |
Inventor after: Tao Yujuan Inventor after: Wu Xiaochun Inventor before: Wu Xiaochun Inventor before: Tao Yujuan |
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| COR | Change of bibliographic data |
Free format text: CORRECT: INVENTOR; FROM: WU XIAOCHUN TAO YUJUAN TO: TAO YUJUAN WU XIAOCHUN |
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| C12 | Rejection of a patent application after its publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20100915 |