CN101834150B - High-heat-dispersion spherical array encapsulation method - Google Patents
High-heat-dispersion spherical array encapsulation method Download PDFInfo
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- CN101834150B CN101834150B CN2010101633766A CN201010163376A CN101834150B CN 101834150 B CN101834150 B CN 101834150B CN 2010101633766 A CN2010101633766 A CN 2010101633766A CN 201010163376 A CN201010163376 A CN 201010163376A CN 101834150 B CN101834150 B CN 101834150B
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- H01L24/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
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Abstract
The invention relates to a high-heat-dispersion reverse solder spherical array encapsulation method which comprises the following steps of: implanting a chip into a substrate by using a binding material; pasting a spring radiator on the chip; electrically connecting the chip and the substrate by a metal lead; plastically encapsulating the spring radiator, the chip, the metal lead, the binding material and the substrate with a plastic encapsulating material to form a plastic encapsulated body; and fixing the periphery of the spring radiator by the plastic encapsulating material, wherein one end of the spring radiator is connected with the chip, and the other end is exposed out of the surface of the encapsulated body so that the heat of the chip is dispersed out of the encapsulated body. The invention solves the problems of heat dispersion in encapsulation without an exposed metal carrier plates and greatly improves the electrothermal performance and the reliability of the product.
Description
Technical field
The present invention relates to the radiator structure method for packing in semiconductor packaging field, particularly relate to a kind of high-heat-dispersion spherical array encapsulation method.
Background technology
Traditional semi-conductor flip-chip bonding encapsulating structure dispels the heat through substrate mostly, mainly can have following deficiency:
1, along with the continuous development of semiconductor technology, be that the middle high-order encapsulation of chip bearing base plate is more and more with the plastic base material, ball type array encapsulation substrate material that adopt particularly more, but because the heat conductivility of plastic base itself is relatively poor, radiating effect is not good.
2, adopt metal wire to realize the encapsulating structure that electricity is interconnected; Many through the macromolecule epoxy resin material with chip attach on loading plate; The radiating effect of resin itself is relatively poor; Chip mainly sees through the metallic particles that adds in the resin and carries out heat conduction, selects the higher synthetic resin of metallic particles proportion for use in order to reach better radiating effect, causes the relative decline of resin ratio; Reduced the cohesive force between itself and chip, the loading plate, and then occurred because of the heavily stressed residual integrity problems such as layering that cause that cohesive force is strong, metallic particles brings at high proportion.
3, limited and the semiconductor packages of poor heat radiation by the encapsulating structure of itself; Also have and adopt the mode of high heat conduction plastic packaging material to improve radiating effect; But high heat conduction plastic packaging material is except high cost price own; Control to the product plastic package process is also had higher requirement, and radiating effect is not obvious.
Summary of the invention
Technical problem to be solved by this invention provides a kind of high-heat-dispersion spherical array encapsulation method, make that the thermal diffusivity of semiconductor packages radiator structure is strong, simple in structure, the heat-dissipating space utilance high, applicability is strong.
The technical solution adopted for the present invention to solve the technical problems is: a kind of method for packing of high-heat-radiation spheroidal array encapsulation structure is provided, may further comprise the steps:
(1) with binding material chip is implanted on the substrate;
(2) the spring radiator is bonded on the chip, an end of spring radiator is linked to each other with chip;
(3) connect chip and substrate with metal wire, realize between the two electric interconnected;
(4) seal operation with plastic packaging material, make the other end of sealing the rear spring radiator be exposed to the plastic-sealed body surface, and the semi-finished product after sealing are carried out the back curing operation;
(5) implant soldered ball at substrate back, make soldered ball be arranged;
The semiconductor package body that (6) will be arranged in together is independent separated, forms the high-radiation spherical array encapsulation.
Described high-heat-dispersion spherical array encapsulation method, preceding in described step (1), on substrate, mount passive device, wherein, described passive device is resistance or electric capacity or inductance or crystal oscillator.
Described high-heat-dispersion spherical array encapsulation method after described step (5), adds the weldering external connection radiating device on the other end of spring radiator.
Described high-heat-dispersion spherical array encapsulation method, the binding material in described step (1) are conducting resinl, non-conductive glue or adhesive film.
Described high-heat-dispersion spherical array encapsulation method, the metal lead wire in described step (3) is gold thread, copper cash, aluminum steel or alloy wire.
Described high-heat-dispersion spherical array encapsulation method, the back curing operation in described step (4) is a high-temperature baking.
Described high-heat-dispersion spherical array encapsulation method, the soldered ball in described step (5) are tin ball or copper post or au bump or alloy bump.
Beneficial effect
Owing to adopted above-mentioned technical scheme, the present invention compared with prior art has following advantage and good effect:
1, built-in spring radiator has increased the area of dissipation of chip greatly, makes chip become the two-sided radiator structure of chip that dispels the heat simultaneously by carrying base and spring radiator by the original single face radiator structure that carries base that leans on.
2, having solved some does not have the package cooling difficult problem of exposed metal support plate, has improved the electric heating property and the reliability of product greatly.
3, the structure of the built-in spring radiator of packaging body makes packaging body in original space, realize good heat-radiation effect, has satisfied the compact trend requirement of semiconductor packages.
4, the telescopic spring characteristic of spring radiator makes it in the product of different package thickness, possess certain versatility, and the raising of applicability has also reduced the die sinking cost of spring radiator.
5, the flexible structure of spring radiator itself makes it on height space, have very strong flexibility; Compare with non-compressibility metal derby of tradition or sheet metal radiator structure; The flexible structure of spring can not cause the weighing wounded of chip because of encapsulating height tolerance in each link, and the stress absorption function that spring is good more helps the raising of product reliability.
6, an end that is exposed to plastic-sealed body at the spring radiator adds the large-scale external connection radiating device of weldering, has satisfied the superelevation heat radiation requirement of high-power product.
7, in encapsulating structure, add passive device, encapsulating structure is more compact, has the high system integration advantage of packaging density.
Description of drawings
Fig. 1 is the profile of high-heat-radiation spheroidal array encapsulation structure of the present invention;
Fig. 2 is the sketch map of high-heat-radiation spheroidal array encapsulation structure medi-spring radiator of the present invention;
Fig. 3 is the bottom schematic view of high-heat-radiation spheroidal array encapsulation structure of the present invention;
Fig. 4 is the product sketch map that is welded with external connection radiating device in the high-heat-radiation spheroidal array encapsulation structure of the present invention;
Fig. 5 is the product sketch map that posts passive device in the high-heat-radiation spheroidal array encapsulation structure of the present invention;
Fig. 6 is the product sketch map that posts passive device in the high-heat-radiation spheroidal array encapsulation structure of the present invention and be welded with external connection radiating device;
Fig. 7 is the product structure sketch map after high-heat-dispersion spherical array encapsulation method of the present invention implemented for the 1st step;
Fig. 8 is the product structure sketch map after high-heat-dispersion spherical array encapsulation method of the present invention implemented for the 2nd step;
Fig. 9 is the product structure sketch map after high-heat-dispersion spherical array encapsulation method of the present invention implemented for the 3rd step;
Figure 10 is the product structure sketch map after high-heat-dispersion spherical array encapsulation method of the present invention implemented for the 4th step;
Figure 11 is the product structure sketch map after high-heat-dispersion spherical array encapsulation method of the present invention implemented for the 5th step;
Figure 12 is the product structure sketch map after high-heat-dispersion spherical array encapsulation method of the present invention implemented for the 6th step.
Embodiment
Below in conjunction with specific embodiment, further set forth the present invention.Should be understood that these embodiment only to be used to the present invention is described and be not used in the restriction scope of the present invention.Should be understood that in addition those skilled in the art can do various changes or modification to the present invention after the content of having read the present invention's instruction, these equivalent form of values fall within the application's appended claims institute restricted portion equally.
Execution mode of the present invention relates to a kind of high-heat-dispersion spherical array encapsulation method; Use this method to form encapsulating structure as shown in Figure 1; Comprise chip 2, metal lead wire 3, binding material 4, substrate 5, plastic packaging material 6 and soldered ball 7, also comprise spring radiator 1 in the described encapsulating structure; Described chip 2 places on the described substrate 5 through binding material 4, and through described metal lead wire 3 realize and substrate 5 between electric interconnected, wherein, metal lead wire 3 can be gold thread or copper cash or aluminum steel or alloy wire; Described binding material 4 is conducting resinl, non-conductive glue or adhesive film; The described spring radiator of described plastic packaging material 6 plastic packagings 1, chip 2, metal lead wire 3, binding material 4 and substrate 5 form plastic-sealed body, and be fixing by described plastic packaging material 6 around the described spring radiator 1; The one of which end links to each other with described chip 2; The other end is exposed to described plastic-sealed body surface, and as shown in Figure 1, the lower surface of spring radiator 1 is bonded on the chip 2; Its upper surface is exposed to the plastic-sealed body surface, so that the heat of chip 2 is shed outside the plastic-sealed body; Described substrate 5 belows are implanted with described soldered ball 7, and wherein, soldered ball 7 is arranged with matrix form, and as shown in Figure 3, soldered ball 7 can be tin ball, copper post, au bump or alloy bump.
Shown in Figure 2 is the structural representation of spring radiator 1; Situation in the time of can using according to reality is selected the spring radiator of various difformities, area and volume for use; Promptly confirm that according to concrete product needed the spring radiator adopts the elastic construction of helix form; Still adopt folding elastic construction; Or adopt the lift structure of Z word, the contact area that changes spring radiator and chip according to the size and the radiating requirements of chip and the height and the number of plies of contact shape and spring radiator.Because the telescopic spring characteristic of spring radiator itself make it in the product of different package thickness, possess certain versatility, thereby the raising of applicability has reduced the die sinking cost of spring radiator; Simultaneously; The flexible structure of spring itself makes it on height space, have very strong flexibility; Compare with non-compressibility metal derby of tradition or sheet metal radiator structure; Can not cause the weighing wounded of chip because of encapsulating height tolerance in each link, the stress absorption function that spring is good helps the raising of product reliability.
An end that is exposed to described plastic-sealed body surface at spring radiator 1 can also add weldering external connection radiating device 8, and is as shown in Figure 4, owing to be welded with external connection radiating device 8 at the upper surface of spring radiator 1, therefore can satisfy the superelevation heat radiation requirement of high-power product.On described substrate 5, can also post passive device 9; As shown in Figure 5, described passive device 9 is resistance or electric capacity or inductance or crystal oscillator, owing in encapsulating structure, be added with passive device 9; Make encapsulating structure more compact, have the high system integration advantage of packaging density.When the present invention can add weldering external connection radiating device 8 at the end that spring radiator 1 is exposed to described plastic-sealed body surface, and on described substrate 5, post passive device 9, satisfy the package requirements of the superelevation heat radiation and the system integration simultaneously, as shown in Figure 6.
The concrete steps of this high-heat-dispersion spherical array encapsulation method are following:
The 1st step was implanted to chip 2 on the substrate 5 with binding material 4, and Fig. 7 is the product sketch map after high-heat-dispersion spherical array encapsulation method implemented for the 1st step.
The 2nd step was bonded at spring radiator 1 on the chip 2, and an end of spring radiator 1 is linked to each other with chip 2,, Fig. 8 is the product sketch map after high-heat-dispersion spherical array encapsulation method implemented for the 2nd step.
The 3rd step connected chip 2 and substrate 5 with metal wire 3, realized that electricity is interconnected, and Fig. 9 is the product sketch map after high-heat-dispersion spherical array encapsulation method implemented for the 3rd step.
The 4th step; Semi-finished product to accomplishing the 1 implantation operation of spring radiator are sealed operation with plastic packaging material 6; Make the other end (being the end that spring radiator 1 does not contact with chip 2) of sealing rear spring radiator 1 be exposed to the plastic-sealed body surface, and the semi-finished product after sealing are carried out the back curing operation, wherein; Back curing operation can adopt the mode of high-temperature baking to realize, Figure 10 is the product sketch map after high-heat-dispersion spherical array encapsulation method implemented for the 4th step.
The 5th step, implant soldered ball 7 at substrate 5 back sides, make soldered ball 7 be arranged, Figure 11 is the product sketch map after high-heat-dispersion spherical array encapsulation method implemented for the 5th step.
The 6th step, the semiconductor package body that is arranged in together is independent separated, form the encapsulation of high heat radiation flip chip bonding ball type array, Figure 12 is that the product of high-heat-dispersion spherical array encapsulation method when implementing for the 6th step cut apart sketch map.After operation is cut apart in completion, make that the semiconductor package body that originally is arranged in together is independent one by one, form high-heat-radiation spheroidal array encapsulation structure as shown in Figure 1.
If it is after the 5th step, on the other end of spring radiator 1, be welded with external connection radiating device 8, final then can form product as shown in Figure 4; If it is before the 1st step, on substrate 5, mount passive device 9, final then can form product as shown in Figure 5; If it is implement above-mentioned two steps simultaneously, final then can form product as shown in Figure 6.
Be not difficult to find; The present invention adopts built-in spring radiator; Increased the area of dissipation of chip greatly; Chip is become by the mode of only dispelling the heat by simultaneously linking to each other with the carrying base originally rely on carrying base and spring radiator to carry out the mode of two-sided heat radiation simultaneously, do not have the package cooling difficult problem of exposed metal support plate, improved the electric heating property and the reliability of product greatly thereby solved some; In addition, the structure of the built-in spring radiator of packaging body makes packaging body in original space, realize good heat-radiation effect, has satisfied the compact trend requirement of semiconductor packages.
Claims (7)
1. a high-heat-dispersion spherical array encapsulation method is characterized in that, may further comprise the steps:
(1) with binding material chip is implanted on the substrate;
(2) the spring radiator is bonded on the chip, an end of spring radiator is linked to each other with chip;
(3) connect chip and substrate with metal wire, realize between the two electric interconnected;
(4) seal operation with plastic packaging material, make the other end of sealing the rear spring radiator be exposed to the plastic-sealed body surface, and the semi-finished product after sealing are carried out the back curing operation;
(5) implant soldered ball at substrate back, make soldered ball be arranged;
The semiconductor package body that (6) will be arranged in together is independent separated, forms the high-radiation spherical array encapsulation.
2. high-heat-dispersion spherical array encapsulation method according to claim 1 is characterized in that, and is preceding in described step (1), on substrate, mounts passive device, and wherein, described passive device is resistance or electric capacity or inductance or crystal oscillator.
3. high-heat-dispersion spherical array encapsulation method according to claim 1 is characterized in that, in described step (5) back and preceding in described step (6), on the other end of spring radiator, adds the weldering external connection radiating device.
4. high-heat-dispersion spherical array encapsulation method according to claim 1 is characterized in that, the binding material in described step (1) is conducting resinl, non-conductive glue or adhesive film.
5. high-heat-dispersion spherical array encapsulation method according to claim 1 is characterized in that, the metal wire in described step (3) is gold thread, copper cash, aluminum steel or alloy wire.
6. high-heat-dispersion spherical array encapsulation method according to claim 1 is characterized in that, the back curing operation in described step (4) is a high-temperature baking.
7. high-heat-dispersion spherical array encapsulation method according to claim 1 is characterized in that, the soldered ball in described step (5) is tin ball or copper post or au bump or alloy bump.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010101633766A CN101834150B (en) | 2010-04-29 | 2010-04-29 | High-heat-dispersion spherical array encapsulation method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010101633766A CN101834150B (en) | 2010-04-29 | 2010-04-29 | High-heat-dispersion spherical array encapsulation method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101834150A CN101834150A (en) | 2010-09-15 |
| CN101834150B true CN101834150B (en) | 2012-05-02 |
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| US9543269B2 (en) | 2011-03-22 | 2017-01-10 | Nantong Fujitsu Microelectronics Co., Ltd. | System-level packaging methods and structures |
| CN108615772B (en) * | 2018-05-17 | 2020-05-12 | 中国科学院微电子研究所 | Packaging structure of sensor and manufacturing method thereof |
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