CN201673900U - Flip-chip bonded high-radiation spherical array packaging structure - Google Patents
Flip-chip bonded high-radiation spherical array packaging structure Download PDFInfo
- Publication number
- CN201673900U CN201673900U CN2010201800228U CN201020180022U CN201673900U CN 201673900 U CN201673900 U CN 201673900U CN 2010201800228 U CN2010201800228 U CN 2010201800228U CN 201020180022 U CN201020180022 U CN 201020180022U CN 201673900 U CN201673900 U CN 201673900U
- Authority
- CN
- China
- Prior art keywords
- chip
- flip
- substrate
- radiation
- heat
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73201—Location after the connecting process on the same surface
- H01L2224/73203—Bump and layer connectors
- H01L2224/73204—Bump and layer connectors the bump connector being embedded into the layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/153—Connection portion
- H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
- H01L2924/15311—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
Abstract
The utility model relates to a flip-chip bonded high-radiation spherical array packaging structure which comprises a chip, an electric interconnecting material, lower filler, a substrate, an encapsulating material and a solder ball; the packaging structure also comprises a spring radiator; the front side of the chip is planted with the electric interconnecting material, is mounted on the substrate in a flip-chip way and is electrically interconnected with the substrate through the electric interconnecting material; the lower filler fills a gap between the chip and the substrate; the encapsulating material encapsulates the spring radiator, the chip, the electric interconnecting material, the lower filler and the substrate to form an encapsulated body; the encapsulating material is fixed around the spring radiator; one end of the spring radiator is connected with the chip and the other end thereof is exposed on the surface of the encapsulating material so as to radiate the heat of the chip out of the encapsulated body, thereby solving the difficult problem of the heat radiation of some packages without exposed metal bearing base or flip-chip chip, and greatly improving the electro-thermal property and the reliability of the product.
Description
Technical field
The utility model relates to the radiator structure in semiconductor packaging field, particularly relates to a kind of flip-chip high-heat-radiation spheroidal array encapsulation structure.
Background technology
Traditional semi-conductor flip-chip bonding encapsulating structure dispels the heat by substrate mostly, mainly can have the following disadvantages:
1, along with the continuous development of semiconductor technology, be that the middle high-order encapsulation of chip bearing base plate is more and more with the plastic base material, ball type array encapsulation substrate material that adopt particularly more, but because the heat conductivility of plastic base itself is relatively poor, radiating effect is not good.
2, in the traditional flip chip bonding packaging structure, chip tips upside down on the substrate by electric interconnecting material, and the chip that poises is difficult to heat is fully shed, the radiating effect that adds upper substrate itself is not good, traditional inverted structure often radiating effect is very poor, and then has influence on the electric heating property and the reliability of final products.
3, limited and the semiconductor packages of poor heat radiation by the encapsulating structure of itself, also have and adopt the mode of high heat conduction plastic packaging material to improve radiating effect, but high heat conduction plastic packaging material is except high cost price own, control to the product plastic package process is also had higher requirement, and radiating effect is not obvious.
Summary of the invention
Technical problem to be solved in the utility model provides a kind of flip-chip high-heat-radiation spheroidal array encapsulation structure, makes that the thermal diffusivity of semiconductor packages radiator structure is strong, simple in structure, heat-dissipating space utilance height, applicability be strong.
The technical scheme that its technical problem that solves the utility model adopts is: a kind of flip-chip high-heat-radiation spheroidal array encapsulation structure is provided, comprise chip, electric interconnecting material, following inserts, substrate, plastic packaging material and soldered ball, also comprise the spring radiator in the described encapsulating structure; Described chip front side is implanted with described electric interconnecting material, and upside-down mounting is on described substrate, by described electric interconnecting material realize and substrate between electric interconnected; Described inserts is down filled up the space between described chip and the substrate; The described spring radiator of described plastic packaging material plastic packaging, chip, electric interconnecting material, following inserts and substrate, form plastic-sealed body, fixed by described plastic packaging material around the described spring radiator, the one end links to each other with described chip, and the other end is exposed to described plastic-sealed body surface; Described substrate below is implanted with described soldered ball.
The end that the spring radiator of described flip-chip high-heat-radiation spheroidal array encapsulation structure is exposed to described plastic-sealed body surface is welded with external connection radiating device.
Post passive device on the substrate of described flip-chip high-heat-radiation spheroidal array encapsulation structure; Described passive device is resistance or electric capacity or inductance or crystal oscillator.
The spring radiator of described flip-chip high-heat-radiation spheroidal array encapsulation structure is flexible structure or elastic construction.
The spring radiator of described flip-chip high-heat-radiation spheroidal array encapsulation structure changes contact area and the contact shape that links to each other and hold with chip according to the size of chip with radiating requirements.
The electric interconnecting material of described flip-chip high-heat-radiation spheroidal array encapsulation structure is tin ball or copper post or au bump or alloy bump.
The soldered ball of described flip-chip high-heat-radiation spheroidal array encapsulation structure is tin ball or copper post or au bump or alloy bump.
Beneficial effect
Owing to adopted above-mentioned technical scheme, the utility model compared with prior art has following advantage and good effect:
1, built-in spring radiator has increased the area of dissipation of chip greatly, and chip was become by carrying the two-sided radiator structure of chip that base and spring radiator dispel the heat simultaneously by original single face radiator structure by the carrying base.
2, having solved some does not have the heat radiation difficult problem of exposed metal carrying base or Flip-Chip Using, has improved the electric heating property and the reliability of product greatly.
3, the structure of the built-in spring radiator of packaging body makes packaging body realize good heat-radiation effect in original space, has satisfied the compact trend requirement of semiconductor packages.
4, the telescopic spring characteristic of spring radiator makes it possess certain versatility in the product of different package thickness, and the raising of applicability has also reduced the die sinking cost of spring radiator.
5, the flexible structure of spring radiator itself makes it have very strong flexibility on height space, compare with non-compressibility metal derby of tradition or sheet metal radiator structure, the flexible structure of spring can not cause the weighing wounded of chip because of encapsulating height tolerance in each link, and the stress absorption function that spring is good more helps the raising of product reliability.
6, an end that is exposed to plastic-sealed body at the spring radiator adds the large-scale external connection radiating device of weldering, has satisfied the superelevation heat radiation requirement of high-power product.
7, in encapsulating structure, add passive device, make encapsulating structure more compact, have the high system integration advantage of packaging density.
Description of drawings
Fig. 1 is the profile of the utility model flip-chip high-heat-radiation spheroidal array encapsulation structure;
Fig. 2 is the schematic diagram of the utility model flip-chip high-heat-radiation spheroidal array encapsulation structure medi-spring radiator;
Fig. 3 is the bottom schematic view of the utility model flip-chip high-heat-radiation spheroidal array encapsulation structure;
Fig. 4 is the product schematic diagram that is welded with external connection radiating device in the utility model flip-chip high-heat-radiation spheroidal array encapsulation structure;
Fig. 5 is the product schematic diagram that posts passive device in the utility model flip-chip high-heat-radiation spheroidal array encapsulation structure;
Fig. 6 is the product schematic diagram that posts passive device in the utility model flip-chip high-heat-radiation spheroidal array encapsulation structure and be welded with external connection radiating device.
Embodiment
Below in conjunction with specific embodiment, further set forth the utility model.Should be understood that these embodiment only to be used to the utility model is described and be not used in the restriction scope of the present utility model.Should be understood that in addition those skilled in the art can make various changes or modifications the utility model after the content of having read the utility model instruction, these equivalent form of values fall within the application's appended claims institute restricted portion equally.
Execution mode of the present utility model relates to a kind of flip-chip high-heat-radiation spheroidal array encapsulation structure, as shown in Figure 1, comprises chip 2, electric interconnecting material 3, following inserts 4, substrate 5, plastic packaging material 6 and soldered ball 7, also comprises spring radiator 1 in the described encapsulating structure; Described chip 2 fronts are implanted with described electric interconnecting material 3, and upside-down mounting is on described substrate 5, by described electric interconnecting material 3 realize and substrate 5 between electric interconnected, wherein, electric interconnecting material 3 can be tin ball or copper post or au bump or alloy bump; Described inserts 4 is down filled up the space between described chip 2 and the substrate 5; The described spring radiator 1 of described plastic packaging material 6 plastic packagings, chip 2, electric interconnecting material 3, following inserts 4 and substrate 5, form plastic-sealed body, fixed by described plastic packaging material 6 around the described spring radiator 1, the one end links to each other with described chip 2, the other end is exposed to described plastic-sealed body surface, and as shown in Figure 1, the lower surface of spring radiator 1 is bonded at the back side of chip 2, its upper surface is exposed to the plastic-sealed body surface, so that the heat of chip 2 is shed outside the plastic-sealed body; Described substrate 5 belows are implanted with described soldered ball 7, and wherein, soldered ball 7 is arranged with matrix form, and as shown in Figure 3, soldered ball 7 can be tin ball, copper post, au bump or alloy bump.
Shown in Figure 2 is the structural representation of spring radiator 1, situation in the time of can using according to reality is selected the spring radiator of various difformities, area and volume for use, promptly determine that according to concrete product needed the spring radiator adopts the elastic construction of helix form, still adopt folding elastic construction, or adopt the lift structure of Z word, the contact area that changes spring radiator and chip according to the size and the radiating requirements of chip and the height and the number of plies of contact shape and spring radiator.Because the telescopic spring characteristic of spring radiator itself make it possess certain versatility in the product of different package thickness, thereby the raising of applicability has reduced the die sinking cost of spring radiator; Simultaneously, the flexible structure of spring itself makes it have very strong flexibility on height space, compare with non-compressibility metal derby of tradition or sheet metal radiator structure, can not cause the weighing wounded of chip because of encapsulating height tolerance in each link, the stress absorption function that spring is good helps the raising of product reliability.
An end that is exposed to described plastic-sealed body surface at spring radiator 1 can also add weldering external connection radiating device 8, as shown in Figure 4, owing to be welded with external connection radiating device 8 at the upper surface of spring radiator 1, therefore can satisfy the superelevation heat radiation requirement of high-power product.On described substrate 5, can also post passive device 9, as shown in Figure 5, described passive device 9 is resistance or electric capacity or inductance or crystal oscillator, owing to be added with passive device 9 in encapsulating structure, make encapsulating structure more compact, have the high system integration advantage of packaging density.The utility model can add at the end that spring radiator 1 is exposed to described plastic-sealed body surface in the weldering external connection radiating device 8, and posts passive device 9 on described substrate 5, satisfies the package requirements of the superelevation heat radiation and the system integration simultaneously, as shown in Figure 6.
Be not difficult to find, the utility model adopts built-in spring radiator, increased the area of dissipation of chip greatly, make chip by originally only depending on the mode of dispelling the heat that simultaneously links to each other to become the mode that relies on carrying base and spring radiator to carry out two-sided heat radiation simultaneously with the carrying base, do not have the heat radiation difficult problem of exposed metal chip bearing base or Flip-Chip Using thereby solved some, improved the electric heating property and the reliability of product greatly; In addition, the structure of the built-in spring radiator of packaging body makes packaging body realize good heat-radiation effect in original space, has satisfied the compact trend requirement of semiconductor packages.
Claims (7)
1. a flip-chip high-heat-radiation spheroidal array encapsulation structure comprises chip (2), electric interconnecting material (3), following inserts (4), substrate (5), plastic packaging material (6) and soldered ball (7), it is characterized in that, also comprises spring radiator (1) in the described encapsulating structure; Described chip (2) front is implanted with electric interconnecting material (3), and upside-down mounting is on described substrate (5), by described electric interconnecting material (3) realize and substrate (5) between electric interconnected; Described inserts (4) is down filled up the space between described chip (2) and the substrate (5); The described spring radiator of described plastic packaging material (6) plastic packaging (1), chip (2), electric interconnecting material (3), following inserts (4) and substrate (5), form plastic-sealed body, described spring radiator (1) is fixing by described plastic packaging material (6) on every side, the one end links to each other with described chip (2), and the other end is exposed to described plastic-sealed body surface; Described substrate (5) below is implanted with described soldered ball (7).
2. flip-chip high-heat-radiation spheroidal array encapsulation structure according to claim 1 is characterized in that, the end that described spring radiator is exposed to described plastic-sealed body surface is welded with external connection radiating device (8).
3. flip-chip high-heat-radiation spheroidal array encapsulation structure according to claim 1 is characterized in that, posts passive device (9) on the described substrate (5); Described passive device (9) is resistance or electric capacity or inductance or crystal oscillator.
4. flip-chip high-heat-radiation spheroidal array encapsulation structure according to claim 1 is characterized in that, described spring radiator (1) is flexible structure or elastic construction.
5. flip-chip high-heat-radiation spheroidal array encapsulation structure according to claim 1 is characterized in that, described spring radiator (1) changes contact area and the contact shape that links to each other and hold with chip (2) according to the size of chip (2) with radiating requirements.
6. flip-chip high-heat-radiation spheroidal array encapsulation structure according to claim 1 is characterized in that, described electric interconnecting material (3) is tin ball or copper post or au bump or alloy bump.
7. flip-chip high-heat-radiation spheroidal array encapsulation structure according to claim 1 is characterized in that, described soldered ball (7) is tin ball or copper post or au bump or alloy bump.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010201800228U CN201673900U (en) | 2010-04-29 | 2010-04-29 | Flip-chip bonded high-radiation spherical array packaging structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010201800228U CN201673900U (en) | 2010-04-29 | 2010-04-29 | Flip-chip bonded high-radiation spherical array packaging structure |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN201673900U true CN201673900U (en) | 2010-12-15 |
Family
ID=43331308
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2010201800228U Expired - Lifetime CN201673900U (en) | 2010-04-29 | 2010-04-29 | Flip-chip bonded high-radiation spherical array packaging structure |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN201673900U (en) |
-
2010
- 2010-04-29 CN CN2010201800228U patent/CN201673900U/en not_active Expired - Lifetime
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN101840896B (en) | Flip-chip high-heat-radiation spheroidal array encapsulation structure | |
| CN101887886A (en) | Multi-chip package and manufacturing method | |
| CN103594432B (en) | A kind of three-dimension packaging radiator structure of rigid flexible system plate | |
| CN101834150B (en) | High-heat-dispersion spherical array encapsulation method | |
| CN206282838U (en) | The integrated encapsulation structure of passive device and active device | |
| CN101826470B (en) | Method for packaging high-radiation spherical array by using flip chip bonding | |
| CN101834163A (en) | Semiconductor flip-chip bonding packaging heat radiation improved structure | |
| CN101826492B (en) | Chip-suspension-type packaging heat dissipation improved structure of semiconductor | |
| CN101840895A (en) | High heat dissipation spherical array package structure | |
| CN202259248U (en) | Packaging structure, small-outline packaging structure and electronic chip thereof | |
| CN201673900U (en) | Flip-chip bonded high-radiation spherical array packaging structure | |
| CN201732780U (en) | Packaging radiation modified structure of semiconductor flip chip welding | |
| CN206697471U (en) | A kind of encapsulating structure of semiconductor integrated circuit | |
| CN201766069U (en) | Chip suspension type semiconductor packaging and radiating improved structure | |
| CN203536412U (en) | A three-dimensional packaging heat-dissipating structure of a rigid-flexible combined board | |
| CN201673899U (en) | High-heat-radiation spherical array packaging structure | |
| CN101840868B (en) | Improved method for semi-conductor flip-chip bonding package cooling | |
| CN202142517U (en) | Semiconductor heat dissipating packaging structure | |
| CN110379784B (en) | Semiconductor packaging structure | |
| CN107742625B (en) | Component vertical mounting packaging structure and process method thereof | |
| CN201838575U (en) | Flipchip thin-small outline packaged lead frame and package structure thereof | |
| CN201623107U (en) | Packaging structure of printed circuit board with flip chip and radiating block connected with external radiating board | |
| CN100403532C (en) | Heat elimination type packaging structure in sphere grid array | |
| CN101840869A (en) | Method for improving heat dissipation of chip suspension semiconductor package | |
| CN109860130A (en) | A kind of packaging body reducing laminated packaging structure for communication chip |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| AV01 | Patent right actively abandoned |
Granted publication date: 20101215 Effective date of abandoning: 20140305 |
|
| RGAV | Abandon patent right to avoid regrant |