CN101833124A - Micro lens based on digital maskless photetching technology and manufacture method thereof - Google Patents
Micro lens based on digital maskless photetching technology and manufacture method thereof Download PDFInfo
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- CN101833124A CN101833124A CN201010134624A CN201010134624A CN101833124A CN 101833124 A CN101833124 A CN 101833124A CN 201010134624 A CN201010134624 A CN 201010134624A CN 201010134624 A CN201010134624 A CN 201010134624A CN 101833124 A CN101833124 A CN 101833124A
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Abstract
The invention provides a micro lens based on a digital maskless photetching technology. The micro lens is characterized in that the radius of the bottom surface of the lens is equally divided into a plurality of micro elements, and the widths of the micro elements have a certain relationship with the width of a pixel of a digital micro-mirror device (DMD) used in a digital photetching system, i.e. the width of one micro element is equal to that of the pixel on the DMD which is shorten by a final minification projecting material mirror, or the micro lens is assembled by the transverse widths of the whole numbers of the pixels; and as the bottom of the micro lens is circular and has a central symmetrical structure, each micro element rotates at one circle around the center to obtain one ring belt, and the bottom circle is formed by a plurality of ring belts. The invention has the advantages that: 1. the invention prevents from error distortion caused by a manufacturing device though a traditional method; 2. the invention has a value which is nearer to a theoretical design value; and 3. as a computer controls a picture to be immediately conversed, the invention can reduce the error of an exposure time, and leads the exposure process to be automatic, simple and efficient.
Description
Technical field
The present invention relates to a kind of lenticule and preparation method thereof, relate in particular to a kind of lenticule based on the digital maskless photoetching technique and preparation method thereof.
Background technology
In micro-optical component is made, photoetching technique from the mask era development to the maskless epoch, and the design of micro optical element and manufacture method have also correspondingly experienced two development of times, as maskless a kind of, easy to make, advantages such as economical with materials reduces cost, high precision, no alignment error, disposable exposure making tri-dimensional facial type structure that digital optical lithography has.Spatial light modulator in the digital photolithography system (SLM) is Digital Micromirror Device (DMD) normally, and it is made up of a plurality of small square catoptrons, and we are called a pixel to such micromirror.The DMD of 13.68 μ m and two kinds of pixel sizes of 10.8 μ m is arranged now on the market, if mix dwindle 10 * projection objective, the size of DMD pixel on photoresist just is about 1 μ m, the i.e. minimum feature of system so.The figure that is used to test exposure is exactly to be made up of many pixels, when the components and parts size of making and pixel during at the same order of magnitude, just has the distortion of figure.If the method for designing of equiphase (double altitudes infinitesimal) in mask exposure is adopted in lenticular design, DMD shows that the lateral dimension of each endless belt will have error so.The way that solves can obtain littler live width with the higher projection objective of reduction magnification.Such as reduction magnification be 100 *, minimum feature is 0.1 μ m.Yet powerful projection objective costs an arm and a leg, and this has increased system cost undoubtedly widely, and the high power projection objective can together dwindle whole DMD exposure area, from and limited the making of components and parts.For this reason, a kind of lenticular design and method for making have been invented at lenticular making in the digital photolithography system specially.
Summary of the invention
The object of the present invention is to provide a kind of lenticule based on the digital maskless photoetching technique and preparation method thereof, in digital photolithography, utilize this method to make lenticule and can effectively overcome the error that traditional designing and manufacturing method causes, thereby the surface structure that improves the made optical element improves its optical property.
The present invention is achieved like this, a kind of lenticule based on the digital maskless photoetching technique, it is characterized in that lens bottom surface radius is divided into several little infinitesimals, the pixel wide of the digital micro-mirror (DMD) that uses in the width of these little infinitesimals and the digital photolithography system becomes certain relation, an i.e. pixel wide on little infinitesimal width DMD of equaling to dwindle through the final minification projection objective, perhaps the transverse width by an integer pixel combines; Because lenticule bottom surface circle is a centrosymmetric structure, just obtain an endless belt so each little infinitesimal rotated a circle around the center, the bottom surface circle is regarded as by many endless belt and is formed, little infinitesimal from small to large, arrange from the inside to surface, utilize the geometric relationship of spherical lens to obtain the height of each endless belt, the height of endless belt has been represented lens measure and the height of diverse location, make the highest outside more endless belt of innermost endless belt low more, press the surperficial face type that geometric formula forms convex lens, design the exposure of each endless belt again, make the height of endless belt be reflected on the photoresist exactly, the difference of size of height is converted into ratio, thereby has determined exposure by the gray-scale value that ratio is converted into exposure again.
A kind of lenticular method for making based on the digital maskless photoetching technique is: be the cumulative exposure method that coupled computer control mask picture conversion utilization divides the different gray-scale values of endless belt, it is characterized in that whole exposure process is divided into many little processes, whole lens area all participates in exposure in each little process, and the gray-scale value of pressing endless belt is to the exposure figure change, allow the exposure of endless belt in the whole exposure process equal the stack of each little process, exposure image is made into lantern slide or FLASH file by the time interval, allows the real-time conversion of computer controlled automatic exposure image to realize above-mentioned cumulative exposure process.
Advantage of the present invention is: 1, avoided classic method to give from design and made the error distortion that device brings, make lenticule have more accurate surface structure and optical property; 2, the overall exposing process is divided into some little processes and is superimposed with and helps make the exposure of each endless belt more accurate, more near the Design Theory value; 3, the error of time shutter be can reduce by the real-time conversion of computer control picture, exposure process robotization, simplification, high-level efficiency made.
Description of drawings
Fig. 1 is the lenticular design drawing of the present invention.
R among the figure
1Be the infinitesimal length at close center, it equals the length of other infinitesimals; L
nBe the vertical range of n girdle height to the center of circle; d
nBe high poor of lens crown height and n endless belt.
Fig. 2 GTG combination of the present invention exposure figure.
Embodiment
In Fig. 1, r
1For an endless belt at the most close center wide because each endless belt width all is r
1So, can calculate the radius of n endless belt:
r
n＝n·r
1
L
nBe the vertical range of n girdle height, can get according to geometric relationship to the center of circle:
d
nBe high poor of lens crown height and n endless belt:
d
nBe exactly in fact the degree of depth of etching, being reflected in the exposure process is exactly the size of exposure, so we are according to d
nSize choose the gray-scale value of each endless belt.
Provide the universal design of grey scale change below, establish lenticule one total m endless belt and form, the gray-scale value of center endless belt is a, and the gray-scale value of other endless belt is b
n(n=1,2,3 ..., m), in theory, the development degree of depth and the exposure of photoresist are linear, provide following formula:
K endless belt exposure:
Make b
0=0, under certain condition of time shutter, can the endless belt gray-scale value be set according to it.
In Fig. 2, be the situation that the bottom surface radius of circle is divided into 16 infinitesimals.16 circles are being represented 16 width of cloth exposure images respectively among the figure, order is from left to right, from top to bottom, here they being aligned to is for convenience relatively together, the circle at center is ascending progressively to become big by endless belt, its gray-scale value is constant all the time, and the gray-scale value of cylindrical is changed by above-mentioned formulae design on every width of cloth exposure image.This picture group sheet is transferred to computing machine and is exposed in order with specific time interval during exposure.
Claims (2)
1. lenticule based on the digital maskless photoetching technique, it is characterized in that lens bottom surface radius is divided into several little infinitesimals, the pixel wide of the digital micro-mirror (DMD) that uses in the width of these little infinitesimals and the digital photolithography system becomes certain relation, an i.e. pixel wide on little infinitesimal width DMD of equaling to dwindle through the final minification projection objective, perhaps the transverse width by an integer pixel combines; Because lenticule bottom surface circle is a centrosymmetric structure, each little infinitesimal rotated a circle around the center just obtain an endless belt, the bottom surface circle is regarded as by many endless belt and is formed, little infinitesimal from small to large, arrange from the inside to surface, utilize the geometric relationship of spherical lens to obtain the height of each endless belt, the height of endless belt has been represented the height of lens surface diverse location, make the highest outside more endless belt of innermost endless belt low more, press the surperficial face type that geometric formula forms convex lens, design the exposure of each endless belt again, make the height of endless belt be reflected on the photoresist exactly, the difference of size of height is converted into ratio, thereby has determined exposure by the gray-scale value that ratio is converted into exposure again.
2. described lenticular method for making of claim 1 based on the digital maskless photoetching technique, it is characterized in that it being the cumulative exposure method that coupled computer control mask picture conversion utilization divides the different gray-scale values of endless belt, it is characterized in that whole exposure process is divided into many little processes, whole lens area all participates in exposure in each little process, and the gray-scale value of pressing endless belt is to the exposure figure change, allow the exposure of endless belt in the whole exposure process equal the stack of each little process, exposure image is made into lantern slide or FLASH file by the time interval, allows the real-time conversion of computer controlled automatic exposure image to realize above-mentioned cumulative exposure process.
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| CN201010134624A CN101833124A (en) | 2010-03-29 | 2010-03-29 | Micro lens based on digital maskless photetching technology and manufacture method thereof |
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| CN201010134624A CN101833124A (en) | 2010-03-29 | 2010-03-29 | Micro lens based on digital maskless photetching technology and manufacture method thereof |
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| CN101833124A true CN101833124A (en) | 2010-09-15 |
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104459839A (en) * | 2014-12-23 | 2015-03-25 | 南昌航空大学 | Method for manufacturing curved surface micro-lens array through digital masks |
| CN105022235A (en) * | 2015-07-15 | 2015-11-04 | 中国科学院长春光学精密机械与物理研究所 | Manufacture method of extreme ultraviolet source collecting mirror with half-wave zone structure |
| CN105074573A (en) * | 2013-02-22 | 2015-11-18 | 株式会社阿迪泰克工程 | Exposure optics, exposure head, and exposure device |
| CN105278010A (en) * | 2015-09-25 | 2016-01-27 | 河南仕佳光子科技有限公司 | Method for manufacturing silicon dioxide microlens |
| CN106646691A (en) * | 2016-12-09 | 2017-05-10 | 苏州苏大维格光电科技股份有限公司 | Fresnel device manufacturing method and manufacturing device |
| CN112684861A (en) * | 2020-12-25 | 2021-04-20 | 无锡影速半导体科技有限公司 | Data processing system and method |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1564053A (en) * | 2004-04-16 | 2005-01-12 | 南昌航空工业学院 | High solution digital microoptical grey mask prodn. system and its prodn, method |
| JP2007079331A (en) * | 2005-09-16 | 2007-03-29 | Hitachi Maxell Ltd | Optical component, micro lens array substrate, and manufacturing method for them |
| CN101021692A (en) * | 2007-04-02 | 2007-08-22 | 中国人民解放军国防科学技术大学 | High resolution ratio micro optical device parallel direct-writing producing method and producing system |
-
2010
- 2010-03-29 CN CN201010134624A patent/CN101833124A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1564053A (en) * | 2004-04-16 | 2005-01-12 | 南昌航空工业学院 | High solution digital microoptical grey mask prodn. system and its prodn, method |
| JP2007079331A (en) * | 2005-09-16 | 2007-03-29 | Hitachi Maxell Ltd | Optical component, micro lens array substrate, and manufacturing method for them |
| CN101021692A (en) * | 2007-04-02 | 2007-08-22 | 中国人民解放军国防科学技术大学 | High resolution ratio micro optical device parallel direct-writing producing method and producing system |
Non-Patent Citations (2)
| Title |
|---|
| 刘驰: "DMD用于数字光刻成像研究", 《中国优秀硕士学位论文全文数据库工程 科技Ⅰ辑》 * |
| 郭小伟等: "基于数字微反射镜灰度光刻的成像模型", 《光子学报》 * |
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105074573A (en) * | 2013-02-22 | 2015-11-18 | 株式会社阿迪泰克工程 | Exposure optics, exposure head, and exposure device |
| CN105074573B (en) * | 2013-02-22 | 2018-01-02 | 株式会社阿迪泰克工程 | Exposure optical system, photohead and exposure device |
| CN104459839A (en) * | 2014-12-23 | 2015-03-25 | 南昌航空大学 | Method for manufacturing curved surface micro-lens array through digital masks |
| CN105022235A (en) * | 2015-07-15 | 2015-11-04 | 中国科学院长春光学精密机械与物理研究所 | Manufacture method of extreme ultraviolet source collecting mirror with half-wave zone structure |
| CN105278010A (en) * | 2015-09-25 | 2016-01-27 | 河南仕佳光子科技有限公司 | Method for manufacturing silicon dioxide microlens |
| CN105278010B (en) * | 2015-09-25 | 2017-01-11 | 河南仕佳光子科技股份有限公司 | Method for manufacturing silicon dioxide microlens |
| CN106646691A (en) * | 2016-12-09 | 2017-05-10 | 苏州苏大维格光电科技股份有限公司 | Fresnel device manufacturing method and manufacturing device |
| CN106646691B (en) * | 2016-12-09 | 2019-02-22 | 苏州苏大维格光电科技股份有限公司 | A kind of production method and producing device of Fresnel structure |
| CN112684861A (en) * | 2020-12-25 | 2021-04-20 | 无锡影速半导体科技有限公司 | Data processing system and method |
| CN112684861B (en) * | 2020-12-25 | 2024-04-16 | 无锡影速半导体科技有限公司 | Data processing system and method |
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Application publication date: 20100915 |