CN105278010A - Method for manufacturing silicon dioxide microlens - Google Patents

Method for manufacturing silicon dioxide microlens Download PDF

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Publication number
CN105278010A
CN105278010A CN201510618901.1A CN201510618901A CN105278010A CN 105278010 A CN105278010 A CN 105278010A CN 201510618901 A CN201510618901 A CN 201510618901A CN 105278010 A CN105278010 A CN 105278010A
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mask layer
layer
lens jacket
lens
silicon dioxide
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CN105278010B (en
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田亮
安俊明
尹小杰
张家顺
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HENAN SHIJIA PHOTONS TECHNOLOGY Co Ltd
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HENAN SHIJIA PHOTONS TECHNOLOGY Co Ltd
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    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B3/00—Simple or compound lenses
    • G02B3/0006—Arrays
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B3/00—Simple or compound lenses
    • G02B3/0006—Arrays
    • G02B3/0012—Arrays characterised by the manufacturing method

Abstract

The invention discloses a method for manufacturing a silicon dioxide microlens. Firstly, the lens height and the photoetching frequency are determined; according to a distance between two intersection points of a horizontal line at each equally-divided height section of the lens height H and a microlens surface characteristic function, a cylinder diameter at the corresponding height in a coaxial cylinder stacked structure is determined; the depth of each lens etching is determined; and using a binary optics technology, a 2N-level stepped structure is formed through N-times register photoetching. The photoetching frequency is low, the lens surface form which is practically manufactured can be well meet theoretical design requirements, and processing controllability of the lens surface form is achieved.

Description

The lenticular manufacture method of silicon dioxide
Technical field
The invention belongs to field of optical device technology, be specifically related to the lenticular manufacture method of a kind of silicon dioxide.
Background technology
Lens are a kind of passive optical components, be used in optical system assemble, diverging light radiation.Not only manufacture method is complicated to utilize the produced lens of traditional handicraft, and produced lens sizes is large, weight large, can not meet the needs of current development in science and technology.At present, people can produce the very little lens of diameter, only have and just can observe with equipment such as microscope, scanning electron microscope, atomic force microscopes, Here it is lenticule.Lenticule and microlens array little, lightweight with its size, be convenient to the advantages such as integrated, array, gather around in fields such as optical communication, light sensing, optical oomputing and have broad application prospects.
Along with the development of semi-conductor industry, having there is the lenticule of series of novel and the manufacture craft of microlens array in the raising of photoetching and Micrometer-Nanometer Processing Technology, mainly introduces the lenticule of several main flow and the method for making of microlens array successively below.
(1) photoresist hot reflux technology
Whole technological process can be divided into three steps: one, expose under the covering of mask the photoresist on substrate, exposing patterns is rounded, rectangle or regular hexagon; Two, development is carried out and erase residual material to the photoresist after exposure; Three, be positioned on heating platform, hot melt molding.There are some shortcomings in the lenticule of this fabrication techniques and microlens array: one, because photoresist exists infiltration phenomenon for baseplate material, when photoresist is in molten condition and the adhesion of substrate be certain, so exist between lenticule spherical profile and substrate after melting photoresist final molding and infiltrate angle, make the curvature that lenticular marginal existence is certain, and center section sink; Two, generally the fill factor, curve factor of microlens array can not more than 80%, and photoresist easily adhesion after being melted down, and adjacent melting photoresist is once after contact, can not form the face shape of lens.Because fill factor, curve factor is not high, incident light can not be made full use of, and can ground unrest be caused; Three, due to the mechanical property of photoresist itself and chemical property poor, optical property is not high yet, is not suitable as final lenticule or the material of other microstructures.
(2) technique of gray-scale mask
The crucial part of technique of gray-scale mask is exactly the making of gray shade scale mask.Two kinds of relatively more conventional at present methods are coloud coding mask and hebs glass mask.The former utilizes different colours, represent different gray shade scales, a kind of color represents a gray shade scale, and then the gray scale figure will represented by color, be printed on transparent film with high-resolution color printer, again this color film is forwarded on black and white transparent film by final minification, material is thus formed and there is different gray shade scale mask, the relief surface distributed architecture of leggy step can be obtained by single exposure.This mask resolution is lower, and the phase outline step of device is directly subject to the restriction of printer color levels.Hebs glass mask (HEBS) utilizes its sensitivity to different-energy electron beam different, and forming transmitance is step change or the real gray scale mask version of continually varying.This mask resolution is higher, and mask manufacturing process is simple, but the making of gray scale mask version will become very difficult along with increasing of its GTG, and cost of manufacture also will significantly rise.The method for making of this lenticule and microlens array, for make the lenticule of short run and microlens array comparatively platform fit, if but need to produce lenticule and microlens array in enormous quantities, this method is just not too convenient, and cost is high, total production run is complicated, and product homogeneity is difficult to ensure.
Summary of the invention
The present invention is to solve lens face shape deflection distortion in existing lenticule and microlens array manufacturing technology, have that ground unrest, complex process, cost are higher, homogeneity of product is difficult to ensure, be not suitable for the technical matterss such as scale of mass production, thus provide a kind of compatible with semiconductor technology, be easy to integrated, size is little, cost is low, customizable, the lenticule being applicable to large-scale production and preparation method thereof.
For solving the problems of the technologies described above, the technical solution adopted in the present invention is as follows:
The lenticular manufacture method of a kind of silicon dioxide, step is as follows:
Step S1: determine lenticular lens height H and photoetching times N, then lenticular lens height is divided into 2 n-1 part;
Step S2: according to the distance of lens height H between the horizontal line and micro-lens surface characteristic function two intersection point of each equal portions At The Height, determine the body diameter at respective heights place in coaxial cylinders stacked structure, be respectively
Step S3: according to the result of calculation in step S2, will form hard mask layer M before calculating the N-n time photoetching (N-n)--mwidth L (N-n)--m, m=1,2,3 ..., 2 n-n-1; N=0,1,2 ..., N-1;
Step S4: the degree of depth h calculating the N-n time etching lens jacket n-n;
Step S5: cleaning treatment is carried out to substrate surface, described base layer is quartz wafer;
Step S6: adopt the PECVD deposit degree of depth to be the boron-doping of 1-10um, the silicon dioxide layer I of phosphorus; Wherein, the chamber pressure of PECVD device is 2000-3000mTorr, underlayer temperature is 335-365 DEG C, bottom electrode radio-frequency power is 1600-2000W, boranes plus nitrogen gas mixed gas flow is 100-140sccm, the mole fraction of borine in mixed gas is 5%-10%, and phosphine and nitrogen mixed gas flow are 20-45sccm, and the mole fraction of phosphine in mixed gas is 5%-10%;
Step S7: repeat step S6, until grow the first lens jacket that the degree of depth is 10-100um, then carry out the high temperature anneal to the first lens jacket, wherein, annealing temperature is 900-1100 DEG C, and annealing time is 3-5 hour;
Step S8: cleaning treatment is done to the first lens jacket surface;
Step S9: form mask layer on the first lens jacket surface;
Step S10: the photoresist layer of spin coating one deck positivity or negativity on mask layer, then does front baking process and Temperature fall to photoresist layer;
Step S11: adopt the 1st photolithography plate to carry out the 1st photoetching, photoresist layer is exposed, develops, rear baking, by the Graphic transitions on the 1st photolithography plate on photoresist layer;
Step S12: adopt ICP etch mask layer, to form hard mask layer M 1--1, then adopt ICP to remove hard mask layer M 1--1on photoresist layer;
Step S13: adopt ICP to etch the first lens jacket, form the 1st level structure of 1 layer of column structure of the first lens jacket;
Step S14: remove the hard mask layer M on the 1st level structure 1--1;
Step S15: repeat step S9 and step S10, adopts the 2nd photolithography plate to carry out the 2nd photoetching, repeats step S12, to form hard mask layer M 2--1with hard mask layer M 2--2; And adopt ICP to etch the 1st level structure, form the 2nd level structure of 3 layers of column structure of the first lens jacket, repeat step S14;
Step S16: repeat step S9 and step S10, adopt N-n photolithography plate to carry out the N-n time photoetching, repeats step S12, to form hard mask layer M (N-n)--1, hard mask layer M (N-n)--2with hard mask layer M (N-n)--m, m=2 n-n-1; And adopt ICP to etch N-n-1 level structure, form (2 of the first lens jacket n-n-1) the N-n level structure of layer column structure, repeats step S14;
Step S17: adopt the PECVD deposit degree of depth to be the boron-doping of 1-10um, the silicon dioxide layer II of phosphorus, then to the silicon dioxide layer II of boron-doping, phosphorus) do high temperature reflux process; Wherein, the chamber pressure of PECVD device is 2000-3000mTorr, underlayer temperature is 335-365 DEG C, bottom electrode radio-frequency power is 1600-2000W, boranes plus nitrogen gas mixed gas flow is 100-140sccm, the mole fraction of borine in mixed gas is 5%-10%, and phosphine and nitrogen mixed gas flow are 20-45sccm, and the mole fraction of phosphine in mixed gas is 5%-10%; Reflux temperature is 900-1100 DEG C, and return time is 5-10 hour;
Step S18: repeat step S17, until grow the second lens jacket that the degree of depth is 10-100um, the first lens jacket after ICP etching and the second lens jacket form lens jacket jointly;
Step S19: thinning, polishing is carried out to the back side of basalis; Wherein, basalis thinning after thickness be 300 μm-500 μm;
Step S20: cleaning treatment is done to the front of lens jacket and the back side of basalis;
Step S21: adopt sol-gel process, distinguishes spin coating antireflection layer I and antireflection layer II at the back side of the front of lens jacket and basalis; Wherein, the thickness of antireflection layer I and antireflection layer II is 285nm;
Step S22: utilize cutting machine that the quartz wafer after processing is cut into multiple lenticule or microlens array.
In step s3, the width L of mask layer will be formed before the N-n time photoetching (N-n)--m, specific formula for calculation is as follows:
L ( N - n ) - - m = D 2 n ; n = 0 , 1 , 2 , ...... , N - 1 ; m = 1 ; L ( N - n ) - - m = D ( 2 n + 1 m - 2 n ) - D ( 2 n + 1 m - 2 n + 1 ) / 2 ; n = 0 , 1 , 2 , ... , N - 2 ; m = 2 , 3 , 4 , ...... , 2 N - n - 1 ; - - - ( 1 ) .
In step s 4 which, the degree of depth h of the N-n time etching lens jacket n-n, computing formula is as follows:
In step s 8, described mask layer is adopt the polysilicon mask layer of LPCVD deposit or adopt metallic mask layer or the photoresist mask layer of Grown by Magnetron Sputtering.
In step s 12, hard mask layer M 1--1width be L 1--1.
In step s 13, etching depth
In step S14, wet etching is utilized to remove polysilicon mask layer on the first lens jacket or metallic mask layer; Utilize the photoresist mask layer on ICP etching removal first lens jacket.
In step S15, hard mask layer M 2--1width be L 2--1; Hard mask layer M 2--2width be L 2--2; Etching depth h 2 = 2 N - 2 2 N - 1 H .
In step s 16, hard mask layer M (N-n)--1width be L (N-n)--1; Hard mask layer M (N-n)--2width be L (N-n)--2; Hard mask layer M (N-n)--mwidth be L (N-n)--m; Etching depth
The present invention adopts binary optical technique, can form 2 through N photoetching nlevel ledge structure, thus adopts and can realize more step progression by less photoetching number of times in this way.And according to the distance of lens height H between the horizontal line and micro-lens surface characteristic function two intersection point of each equal portions At The Height, determine the body diameter at respective heights place in coaxial cylinders stacked structure, be respectively the physical dimension of all active graphicals on N-n photolithography plate is uniquely determined by the lens surface properties function of Theoretical Design, the lens surface shape of actual fabrication can be made to meet theoretical design requirements preferably, realize the process controllability of lens surface shape.
Adopt the ripe Planar Lightwave Circuit Technology based on silicon dioxide in the present invention, so be conducive to realizing slitless connection with existing maturation process, need not additionally increase Innovation Input and save cost of development.Base layer material selects silica glass material, and this material thermal resistance is good, and transparency is high, has excellent optical homogeneity.The earth silicon material of lens jacket Material selec-tion doped with boron, phosphorus, this material has good mobility when high temperature reflux, second lens jacket is coated on the first lens jacket, fully can be fused be integrated by both high temperature refluxes, and self-assembling formation planoconvex structure.Basalis can be made identical with the refractive index of lens jacket by the content changing the boron phosphorus mixed, thus can ensure that lenticule entirety has refractive index homogeneity.Adopt magnesium fluoride material as the material of antireflection layer in the present invention.This material antireflective effect is good, membrane uniformity is high, is suitable for the substrate of difformity, size.The present invention compared to photoresist hot reflux technology have lens face shape deflection better, higher, the reliability comparatively advantages of higher of array fill factor, curve factor, and compared to technique of gray-scale mask, there is the advantages such as technique is simple, cost is lower, homogeneity of product is better, applicable large-scale production.
Accompanying drawing explanation
Fig. 1 is silicon dioxide of the present invention lenticular character of surface function and the lens height horizontal intersection graph at each equal portions At The Height.
Fig. 2 is the 1st level structure schematic diagram of lenticular first lens jacket of silicon dioxide of the present invention.
Fig. 3 is the 2nd level structure schematic diagram of lenticular first lens jacket of silicon dioxide of the present invention.
Fig. 4 is the 3rd level structural representation of lenticular first lens jacket of silicon dioxide of the present invention.
Fig. 5 is silicon dioxide of the present invention lenticular coaxial cylinders stacked structure schematic diagram.
Fig. 6 is the lenticular structural representation of silicon dioxide of the present invention.
Fig. 7 is the lenticular method flow diagram of silicon dioxide of the present invention.
Fig. 8 is the process chart of silicon dioxide lenticule method for making of the present invention.
Wherein, 1: antireflection layer I; 2: lens jacket; 3: basalis; 4: antireflection layer II; 5: mask layer; 6: photoresist layer; 1st level structure of 7: the first lens jackets; 2nd level structure of 8: the first lens jackets; The 3rd level structure of 9: the first lens jackets; The N level structure of the N+6: the first lens jacket; 2-1: the silicon dioxide layer I of ginseng boron phosphorus; 2-2: the first lens jacket; 2-3: the silicon dioxide layer II of ginseng boron phosphorus; 2-4: the second lens jacket.
Embodiment
The present embodiment is described for N=3.
As shown in figures 1-8, the lenticular manufacture method of a kind of silicon dioxide, step is as follows:
Step S1: determine lenticular lens height H and photoetching times N, then lenticular lens height is divided into 2 n-1 part.
Wherein, photoetching times N=3, then lenticular lens height is divided into 2 n-1=7 part.
Step S2: according to the distance of lens height H between the horizontal line and micro-lens surface characteristic function two intersection point of each equal portions At The Height, determine the body diameter at respective heights place in coaxial cylinders stacked structure, be respectively D 1, D 2, D 3, D 4, D 5, D 6and D 7.
Step S3: according to the result of calculation in step S2, will form mask layer M before calculating the N-n time photoetching (N-n)--mwidth L (N-n)--m, m=1,2,3 ..., 2 n-n-1; N=0,1,2 ..., N-1, specific formula for calculation is as follows:
M ( N - n ) - - m = L ( N - n ) - - m = D 2 n ; n = 0 , 1 , 2 , ... , N - 1 ; m = 1 ; L ( N - n ) - - m = D ( 2 n + 1 m - 2 n ) - D ( 2 n + 1 m - 2 n + 1 ) / 2 ; n = 0 , 1 , 2 , ...... , N - 2 ; m = 2 , 3 , 4 , ... , 2 N - n - 1 ; - - - ( 1 )
Then to form mask layer M before the 1st photoetching 1--1width be L 1--1=D 4;
Mask layer M to be formed before 2nd photoetching 2--1width be L 2--1=D 2; Hard mask layer M 2--2width be L 2 - - 2 = D 6 - D 4 2 ;
Mask layer M to be formed before 3rd photoetching 3--1width be L 3--1=D 1; Mask layer M 3--2width be mask layer M 3--3width be mask layer M 3--4width be L 3 - - 4 = D 7 - D 6 2 .
Step S4: the degree of depth h calculating the N-n time etching lens jacket n-n; Computing formula is as follows:
Then the 1st the etching lens jacket degree of depth 2nd the etching lens jacket degree of depth h 2 = 2 N - 2 2 N - 1 H = 2 7 H ; 3rd the etching lens jacket degree of depth h 3 = 2 n 2 N - 1 H = 1 7 H .
Step S5: carry out cleaning treatment to substrate surface, described base layer is quartz wafer.
Step S6: adopt the PECVD deposit degree of depth to be the boron-doping of 1-10um, silicon dioxide layer I 2-1 of phosphorus; Wherein, the chamber pressure of PECVD device is 2000-3000mTorr, underlayer temperature is 335-365 DEG C, bottom electrode radio-frequency power is 1600-2000W, boranes plus nitrogen gas mixed gas flow is 100-140sccm, the mole fraction of borine in mixed gas is 5%-10%, and phosphine and nitrogen mixed gas flow are 20-45sccm, and the mole fraction of phosphine in mixed gas is 5%-10%.
Step S7: repeat step S6, until grow the first lens jacket 2-2 that the degree of depth is 10-100um, then carry out the high temperature anneal to the first lens jacket 2-2, wherein, annealing temperature is 900-1100 DEG C, and annealing time is 3-5 hour.
Step S8: cleaning treatment is done to the first lens jacket 2-2 surface.
Step S9: form mask layer 5 on the first lens jacket 2-2 surface; Described mask layer 5 is adopt the polysilicon mask layer of LPCVD deposit or adopt metallic mask layer or the photoresist mask layer of Grown by Magnetron Sputtering.
Step S10: the photoresist layer 6 of spin coating one deck positivity or negativity on mask layer 5, then does front baking process and Temperature fall to photoresist layer 6.
Step S11: adopt the 1st photolithography plate to carry out the 1st photoetching, photoresist layer 6 is exposed, develops, rear baking, by the Graphic transitions on the 1st photolithography plate on photoresist layer 6.
Step S12: adopt ICP etch mask layer 5, to form hard mask layer M 1--1, hard mask layer M 1--1width be L 1--1;
Then ICP is adopted to remove hard mask layer M 1--1on photoresist layer 6.
Step S13: adopt ICP to etch the first lens jacket 2-2, etching depth form the 1st level structure 7 of 1 layer of column structure of the first lens jacket 2-2.
Step S14: remove the hard mask layer M on the 1st level structure 7 1--1; Wet etching is utilized to remove polysilicon mask layer on the first lens jacket 2-2 or metallic mask layer; Utilize the photoresist mask layer on ICP etching removal first lens jacket 2-2.
Step S15: repeat step S9 and step S10, adopts the 2nd photolithography plate to carry out the 2nd photoetching, repeats step S12, to form hard mask layer M 2--1with hard mask layer M 2--2; Mask layer M 2--1width be L 2--1; Hard mask layer M 2--2width be L 2--2; And adopt ICP to etch the 1st level structure, form the 2nd level structure 8 of 3 layers of column structure of the first lens jacket 2-2, repeat step S14.
Step S16: repeat step S9 and step S10, adopts the 3rd photolithography plate to carry out the 3rd photoetching, repeats step S12, to form hard mask layer M 3--1, hard mask layer M 3--2, mask layer M 3--3with mask layer M 3--4; Mask layer M 3--1width be L 3--1; Mask layer M 3--2width be L 3--2; Mask layer M 3--3width be L 3--3; Mask layer M 3--4width be L 3--4; And adopt ICP to etch the 2nd level structure, form the 3rd level structure 9 of 7 layers of column structure of the first lens jacket 2-2, repeat step S14.
Step S17: adopt the PECVD deposit degree of depth to be the boron-doping of 1-10um, silicon dioxide layer II 2-3 of phosphorus, then high temperature reflux process is done to silicon dioxide layer II 2-3 of boron-doping, phosphorus; Wherein, the chamber pressure of PECVD device is 2000-3000mTorr, underlayer temperature is 335-365 DEG C, bottom electrode radio-frequency power is 1600-2000W, boranes plus nitrogen gas mixed gas flow is 100-140sccm, the mole fraction of borine in mixed gas is 5%-10%, and phosphine and nitrogen mixed gas flow are 20-45sccm, and the mole fraction of phosphine in mixed gas is 5%-10%; Reflux temperature is 900-1100 DEG C, and return time is 5-10 hour.
Step S18: repeat step S17, until grow the second lens jacket 2-4 that the degree of depth is 10-100um, the first lens jacket 2-2 after ICP etching and the second lens jacket 2-4 forms lens jacket 2 jointly.
Step S19: thinning, polishing is carried out to the back side of basalis 3; Wherein, basalis 3 thinning after thickness be 300 μm-500 μm.
Step S20: cleaning treatment is done to the front of lens jacket 2 and the back side of basalis 3.
Step S21: adopt sol-gel process, distinguishes spin coating antireflection layer I 1 and antireflection layer II 4 at the back side of the front of lens jacket 2 and basalis 3; Wherein, the thickness of antireflection layer I 1 and antireflection layer II 4 is 285nm.
Step S22: utilize cutting machine that the quartz wafer after processing is cut into multiple lenticule or microlens array.
First lens jacket and the second lens jacket all adopt the earth silicon material of identical boron-doping phosphorus in the present embodiment, and its refractive index is identical with basalis 3 refractive index, the consistance of overall refractive index of the present invention can be ensured, reflux temperature can be reduced, prevent pyroprocessing from causing impurity concentration to spread again and the present invention's distortion, make the earth silicon material of boron-doping phosphorus have good mobility when high temperature reflux simultaneously.
By the high-temperature annealing step to the first lens jacket in the present embodiment, lattice imperfection and internal stress can be eliminated, make the silicon dioxide layer of growth become dense uniform.
By the high temperature reflux step to the second lens jacket in the present embodiment, lattice imperfection and internal stress can be eliminated, the silicon dioxide layer of growth is made to become dense uniform, the cavity between the first lens jacket and the second lens jacket can be filled simultaneously, make both fuse completely to be integrated, to ensure the optical property that lenticule is good.
The present embodiment is by adopting binary optical technique, and can form 8 grades of ledge structures through three times to version photoetching, can form 2N level ledge structure through N time to version photoetching, thus this method can realize more step progression by less photoetching number of times.The step progression of coaxial cylinders stacked structure is more, and the final actual lens surface configuration formed is more close to theoretical design requirements.
Each end face of layer cylinder by arranging coaxial cylinders stacked structure in the present embodiment overlaps completely with the xsect perpendicular to axis at the corresponding height place of the lens of Theoretical Design, the cross section circular diameter of each layer cylinder of coaxial cylinders stacked structure can be made equal with the cross section circular diameter at the corresponding height place of the lens of Theoretical Design, namely the body diameter by by the distance definition in the lens surface properties function of Theoretical Design between the horizontal line at differing heights h place and this function two intersection point being respective heights h place in coaxial cylinders stacked structure, make photolithography plate 1, 2, 3, the physical dimension of N all active graphicals upper is uniquely determined by the lens surface properties function of Theoretical Design, the lens surface shape of actual fabrication can be made to meet theoretical design requirements preferably, realize the process controllability of lens surface shape.

Claims (9)

1. the lenticular manufacture method of silicon dioxide, step is as follows:
Step S1: determine lenticular lens height H and photoetching times N, then lenticular lens height is divided into 2 n-1 part;
Step S2: according to the distance of lens height H between the horizontal line and micro-lens surface characteristic function two intersection point of each equal portions At The Height, determine the body diameter at respective heights place in coaxial cylinders stacked structure, be respectively
Step S3: according to the result of calculation in step S2, will form hard mask layer M before calculating the N-n time photoetching (N-n)--mwidth L (N-n)--m, m=1,2,3 ..., 2 n-n-1; N=0,1,2 ..., N-1;
Step S4: the degree of depth h calculating the N-n time etching lens jacket n-n;
Step S5: cleaning treatment is carried out to substrate surface, described base layer is quartz wafer;
Step S6: adopt the PECVD deposit degree of depth to be the boron-doping of 1-10um, the silicon dioxide layer I (2-1) of phosphorus; Wherein, the chamber pressure of PECVD device is 2000-3000mTorr, underlayer temperature is 335-365 DEG C, bottom electrode radio-frequency power is 1600-2000W, boranes plus nitrogen gas mixed gas flow is 100-140sccm, the mole fraction of borine in mixed gas is 5%-10%, and phosphine and nitrogen mixed gas flow are 20-45sccm, and the mole fraction of phosphine in mixed gas is 5%-10%;
Step S7: repeat step S6, until grow the first lens jacket (2-2) that the degree of depth is 10-100um, then the high temperature anneal is carried out to the first lens jacket (2-2), wherein, annealing temperature is 900-1100 DEG C, and annealing time is 3-5 hour;
Step S8: cleaning treatment is done to the first lens jacket (2-2) surface;
Step S9: form mask layer (5) on the first lens jacket (2-2) surface;
Step S10: the photoresist layer (6) of spin coating one deck positivity or negativity on mask layer (5), then does front baking process and Temperature fall to photoresist layer (6);
Step S11: adopt the 1st photolithography plate to carry out the 1st photoetching, photoresist layer (6) is exposed, develops, rear baking, by the Graphic transitions on the 1st photolithography plate on photoresist layer (6);
Step S12: adopt ICP etch mask layer (5), to form hard mask layer M 1--1, then adopt ICP to remove hard mask layer M 1--1on photoresist layer (6);
Step S13: adopt ICP to etch the first lens jacket (2-2), form the 1st level structure (7) of 1 layer of column structure of the first lens jacket (2-2);
Step S14: remove the hard mask layer M on the 1st level structure (7) 1--1;
Step S15: repeat step S9 and step S10, adopts the 2nd photolithography plate to carry out the 2nd photoetching, repeats step S12, to form hard mask layer M 2--1with hard mask layer M 2--2; And adopt ICP to etch the 1st level structure, form the 2nd level structure of 3 layers of column structure of the first lens jacket (2-2), repeat step S14;
Step S16: repeat step S9 and step S10, adopt N-n photolithography plate to carry out (N-n) secondary photoetching, repeats step S12, to form hard mask layer M (N-n)--1, hard mask layer M (N-n)--2with hard mask layer M (N-n)--m, m=2 n-n-1; And adopt ICP to etch N-n-1 level structure, form (2 of the first lens jacket (2-2) n-n-1) the N-n level structure of layer column structure, repeats step S14;
Step S17: adopt the PECVD deposit degree of depth to be the boron-doping of 1-10um, the silicon dioxide layer II (2-3) of phosphorus, then high temperature reflux process is done to the silicon dioxide layer II (2-3) of boron-doping, phosphorus; Wherein, the chamber pressure of PECVD device is 2000-3000mTorr, underlayer temperature is 335-365 DEG C, bottom electrode radio-frequency power is 1600-2000W, boranes plus nitrogen gas mixed gas flow is 100-140sccm, the mole fraction of borine in mixed gas is 5%-10%, and phosphine and nitrogen mixed gas flow are 20-45sccm, and the mole fraction of phosphine in mixed gas is 5%-10%; Reflux temperature is 900-1100 DEG C, and return time is 5-10 hour;
Step S18: repeat step S17, until grow the second lens jacket (2-4) that the degree of depth is 10-100um, the first lens jacket (2-2) after ICP etching and the second lens jacket (2-4) form lens jacket (2) jointly;
Step S19: thinning, polishing is carried out to the back side of basalis (3); Wherein, basalis (3) thinning after thickness be 300 μm-500 μm;
Step S20: cleaning treatment is done to the front of lens jacket (2) and the back side of basalis (3);
Step S21: adopt sol-gel process, distinguishes spin coating antireflection layer I (1) and antireflection layer II (4) at the back side of the front of lens jacket (2) and basalis (3); Wherein, the thickness of antireflection layer I (1) and antireflection layer II (4) is 285nm;
Step S22: utilize cutting machine that the quartz wafer after processing is cut into multiple lenticule or microlens array.
2. the lenticular manufacture method of silicon dioxide according to claim 1, is characterized in that: in step s3, will form the width L of mask layer before (N-n) secondary photoetching (N-n)--m, specific formula for calculation is as follows:
L ( N - n ) - - m = D 2 n ; n = 0 , 1 , 2 , ...... , N - 1 ; m = 1 ; L ( N - n ) - - m = D ( 2 n + 1 m - 2 n ) - D ( 2 n + 1 m - 2 n + 1 ) / 2 ; n = 0 , 1 , 2 , ...... , N - 2 ; m = 2 , 3 , 4 , ...... , 2 N - n - 1 ; - - - ( 1 ) .
3. the lenticular manufacture method of silicon dioxide according to claim 1, is characterized in that: in step s 4 which, the degree of depth h of the N-n time etching lens jacket n-n, computing formula is as follows:
4. the lenticular manufacture method of silicon dioxide according to claim 1, it is characterized in that: in step s 8, described mask layer (5) is adopt the polysilicon mask layer of LPCVD deposit or adopt metallic mask layer or the photoresist mask layer of Grown by Magnetron Sputtering.
5. the lenticular manufacture method of silicon dioxide according to claim 1, is characterized in that: in step s 12, hard mask layer M 1--1width be L 1--1.
6. the lenticular manufacture method of silicon dioxide according to claim 1, is characterized in that: in step s 13, etching depth h 1 = 2 N - 1 2 N - 1 H .
7. the lenticular manufacture method of silicon dioxide according to claim 1, is characterized in that: in step S14, utilizes wet etching to remove polysilicon mask layer on the first lens jacket (2-2) or metallic mask layer; Utilize the photoresist mask layer on ICP etching removal first lens jacket (2-2).
8. the lenticular manufacture method of silicon dioxide according to claim 1, is characterized in that: in step S15, hard mask layer M 2--1width be L 2--1; Hard mask layer M 2--2width be L 2--2; Etching depth
9. the lenticular manufacture method of silicon dioxide according to claim 1, is characterized in that: in step s 16, hard mask layer M (N-n)--1width be L (N-n)--1; Hard mask layer M (N-n)--2width be L (N-n)--2; Hard mask layer M (N-n)--mwidth be L (N-n)--m; Etching depth
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