CN112415866A - Maskless photoetching system capable of realizing efficient exposure - Google Patents
Maskless photoetching system capable of realizing efficient exposure Download PDFInfo
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- CN112415866A CN112415866A CN202011491958.7A CN202011491958A CN112415866A CN 112415866 A CN112415866 A CN 112415866A CN 202011491958 A CN202011491958 A CN 202011491958A CN 112415866 A CN112415866 A CN 112415866A
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
- G03F7/70075—Homogenization of illumination intensity in the mask plane by using an integrator, e.g. fly's eye lens, facet mirror or glass rod, by using a diffusing optical element or by beam deflection
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70008—Production of exposure light, i.e. light sources
- G03F7/7005—Production of exposure light, i.e. light sources by multiple sources, e.g. light-emitting diodes [LED] or light source arrays
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
- G03F7/70191—Optical correction elements, filters or phase plates for controlling intensity, wavelength, polarisation, phase or the like
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70383—Direct write, i.e. pattern is written directly without the use of a mask by one or multiple beams
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Abstract
The invention provides a maskless photoetching system capable of efficiently exposing, which can improve the exposure efficiency and reduce the exposure time, and comprises the following components in sequence: the exposure light source, the light gathering component, the integrator and the projection component project the light beam onto the spatial light modulator; the spatial light modulator modulates the light beam projected on the spatial light modulator into a characteristic pattern light beam and then outputs the characteristic pattern light beam; a first imaging system for imaging the characteristic pattern beam on the array of condensing elements; the light condensing element array is used for condensing the characteristic pattern light beams into discrete light condensing spots; the spatial filter is used for filtering the discrete condensation spots; and the second imaging system is used for imaging the filtered discrete light-gathering spots on an imaging surface, at least two exposure light sources are arranged, a wavelength selection component is arranged between the light-gathering component and the integrator, and light beams with different wavelengths produced by the exposure light sources are integrated in the same direction from different directions through the wavelength selection component after being converged by the light-gathering component.
Description
Technical Field
The invention belongs to the technical field of maskless photoetching exposure systems, and particularly relates to a maskless photoetching system capable of efficiently exposing.
Background
The photoetching process refers to a process of transferring a pattern onto a photoresist on a surface photoresist evening substrate through processes such as exposure, development and the like, and prepares for the next etching or ion implantation process. At least 10 times of photolithography processes or more are required in a general chip manufacturing process.
In a conventional mask lithography machine, a plurality of masks are required to be manufactured to manufacture devices on a wafer. Due to the reduction of the feature size and the requirement of precision for smaller feature sizes, these mask plates are very costly and time-consuming for production, so that the manufacturing cost of the traditional mask type wafer lithography becomes higher and higher, and the traditional lithography image is manufactured by using the mask plate, generating a certain modulation of spatial light intensity and phase through a specific image coding mode, and projecting the illumination beam onto the photosensitive element after passing through the mask plate. Each mask is configured as a single image.
In a direct-write lithography system, the pattern of features is produced by a spatial light modulator, such as an array of micromirrors, which are individually addressable to individually control the reflection of an impinging light beam in different oblique directions to produce a spatial intensity modulation. These arrays of spatial micro-mirrors are projected onto the substrate of the light sensitive element at a magnification β by an optical projection element, producing a pattern of features.
The maskless photoetching system adopting the spatial light modulator mainly adopts a computer to control the spatial light modulator to carry out fine typesetting exposure. The direct-writing exposure machine in the current market has low productivity and long production period, the exposure of each substrate needs to complete the processes of loading, aligning, exposing, unloading and the like, and the whole process time is long. The exposure productivity is an important index of the customer's demand, and it is very necessary to increase the exposure intensity, reduce the exposure time, and increase the exposure efficiency. Increasing the exposure intensity is the most fundamental method.
Disclosure of Invention
In view of the above problems, the present invention provides a maskless lithography system capable of high-efficiency exposure, which can improve the exposure efficiency and reduce the exposure time.
The technical scheme is as follows: a maskless lithography system capable of efficient exposure: comprises the following steps of sequentially setting:
an exposure light source for generating a light beam;
a light condensing part for condensing the light beam generated by the exposure light source;
an integrator for homogenizing the light beam;
a projection section for projecting the light beam onto the spatial light modulator;
the spatial light modulator is used for modulating the light beams projected on the spatial light modulator into characteristic pattern light beams and then outputting the characteristic pattern light beams;
a first imaging system for imaging the characteristic pattern beam output by the spatial light modulator on an array of condensing elements;
the light condensing element array is used for condensing the characteristic pattern light beams into discrete light condensing spots;
the spatial filter is used for filtering the discrete condensation spots;
a second imaging system for imaging the discrete spot filtered by the spatial filter onto an imaging plane,
the method is characterized in that:
the light source device comprises at least two exposure light sources, wherein a wavelength selection component is arranged between the light condensation component and the integrator and is used for integrating light beams with different wavelengths produced by the exposure light sources into the same direction from different directions after being converged by the light condensation component.
Further, the wavelength selection component is any one of a spectroscope or a light splitting prism.
Further, the first imaging system comprises at least sequentially arranged: the characteristic pattern light beam output by the spatial light modulator is projected onto the reflector through the lens, and the reflector reflects the characteristic pattern light beam onto the lens and outputs the characteristic pattern light beam after being refracted by the lens.
Further, the imaging surface is located on the photosensitive film layer of the substrate, and the substrate is adsorbed on the movable workbench through the vacuum adsorption device.
Further, the spatial light modulator comprises any one of a DMD, an LCOS and a grating light valve array; the light condensing element in the light condensing element array comprises any one of a diffraction element and a phase element, and the exposure light source comprises any one of an LED light source or a laser light source
Further, a plurality of the maskless lithography systems capable of high-efficiency exposure are arranged side by side in the direction perpendicular to the scanning direction, so as to increase the scanning width.
Further, the direction of the light condensing element array has an offset angle θ with the scanning direction of the movable table, and the following formula is satisfied:
Tan(θ)＝m/Ncell
where m is a positive integer, and Ncell is the number of array cells of the light condensing element array in the approaching scanning direction when the cell pitches of the light condensing element array in the X direction and the Y direction are equal.
Further, the system satisfies the following formula:
f＜Pl2/(1.22λ)
wherein f is the equivalent focal length of the condensing elements in the condensing element array, Pl is the distance between the condensing element arrays, and lambda is the exposure wavelength;
the system satisfies the following formula:
0.05＜1.22λ×f/Pl2＜1
wherein f is the equivalent focal length of the condensing elements in the condensing element array, Pl is the distance between the condensing element arrays, and lambda is the exposure wavelength.
Further, the first imaging system satisfies a relational expression
0.5<β1<2
Where β 1 is Pl/Pd, β 1 is the first imaging system magnification, Pl is the pitch of the array of light collecting elements, and Pd is the pitch of the array of cells of the spatial light modulator.
Further, the second imaging system comprises a first lens group, a diaphragm, a second lens group and a third lens group which are arranged in sequence from the object plane to the image plane, the first lens group at least comprises 1 negative lens and 2 positive lenses, the second lens group at least comprises 1 negative lens and 1 positive lens, the third lens group at least comprises 1 positive lens,
the second imaging system satisfies a relational expression
0.5<β2×f1/f23<2.1
0.2<f23/f3<1.8
Wherein, the ratio of beta 2: magnification of second imaging system, f 1: combined focal length of the first lens group, f 23: combined focal length of the second and third lens groups, f 3: the combined focal length of the third lens group.
Furthermore, the lens of the first lens group closest to the diaphragm is a negative lens, and the mirror surface of the negative lens closest to the diaphragm is a concave surface facing the diaphragm; the lens of the second lens group closest to the diaphragm is a negative lens, and the mirror surface of the negative lens closest to the diaphragm is a concave surface facing the diaphragm; the object side lens surface of the positive lens closest to the image surface of the third lens group is a convex surface facing the object surface, and the relational expression is satisfied
0.6<-β21/2×R1/R2<2.3
Wherein β 2 is the magnification of the second imaging system, R1 is the radius of curvature of the mirror surface of the first mirror group closest to the stop, and R2 is the radius of curvature of the mirror surface of the second mirror group closest to the stop.
The conventional direct-writing type exposure apparatus generally uses a single-wavelength light source, the output power of the light source is limited, the exposure illumination ratio is low, the production speed is seriously affected, and the bottleneck for limiting the production speed is caused.
The most important method for increasing the exposure intensity is to increase the output power of the light source, and the existing direct-writing exposure equipment generally uses a single-wavelength light source and has limited output power of the light source. The output power of the light sources is improved, only by increasing the number of the light sources, and the plurality of light sources are simply arranged and used, so that the Lagrangian invariants of the illumination system can be increased, the effective utilization rate of the light sources is correspondingly reduced, the effects of increasing the exposure intensity and improving the exposure efficiency cannot be achieved.
Therefore, in the present invention, by providing a plurality of exposure light sources and by providing a wavelength selection member, a wavelength selection member is provided between the light collection member and the integrator, and the wavelength selection member is used for integrating light beams of different wavelengths generated by the exposure light sources into approximately parallel light beams through the light collection member, and then integrating the light beams into the same direction from different directions. The light beams of the LED light sources or the laser light sources with various wavelengths are converged together to participate in exposure, the Lagrangian invariant of an illumination system is not changed, the effective utilization rate of the light sources can also be kept unchanged, and therefore exposure illumination can be improved, exposure time can be saved, and the effect of improving production speed is achieved.
Drawings
FIG. 1 is a schematic diagram of a maskless lithography system of the present invention that enables efficient exposure;
FIG. 2 is a schematic view of a conventional light-collecting spot;
FIG. 3 is a schematic diagram of a light spot produced by a maskless lithography system capable of efficient exposure according to the present invention;
FIG. 4 is a schematic diagram of the direction of the array of light-focusing elements being at an angle to the scanning direction of the movable stage;
FIG. 5 is a schematic diagram of a second imaging system in one embodiment;
fig. 6 is a graph of MTF of the transfer function at 365nm for the second imaging system;
fig. 7 is a graph of MTF of the transfer function when the second imaging system λ is 405 nm.
Detailed Description
The technical solutions of the present invention will be described clearly and completely with reference to the accompanying drawings, wherein the drawings provided in the present embodiments illustrate the basic idea of the invention only in a schematic way, and the components related to the present invention are only shown in the drawings rather than drawn according to the number, shape and size of the components in actual implementation, and the form, number and proportion of the components in actual implementation may be changed freely, and the layout of the components may be more complex.
Referring to fig. 1, a maskless lithography system capable of high-efficiency exposure according to the present invention includes:
an exposure light source 1 for generating a light beam, in the present embodiment, the exposure light source 1 is provided in two;
the light condensing part 2 is used for condensing the light beams produced by the exposure light source 1 and integrating the light beams into approximately parallel light beams;
the wavelength selection component 3 is used for integrating the light speeds of different wavelengths projected by the exposure light source 1 in the same direction from different directions through the light condensation component 2;
an integrator 4 for homogenizing the light beam;
a projection section 5 for projecting the light beam onto a spatial light modulator 6;
the spatial light modulator 6 is used for modulating the light beam projected on the spatial light modulator 6 into a characteristic pattern light beam and outputting the characteristic pattern light beam;
a first imaging system 7 for imaging the characteristic pattern beam output from the spatial light modulator 6 on the condensing element array 8;
a light condensing element array 8 for condensing the characteristic pattern light beam into discrete light condensing spots;
a spatial filter 9 for filtering the discrete light-gathering spots;
and the second imaging system 10 is used for imaging the discrete condensation spots filtered by the spatial filter 9 on an imaging surface.
Specifically, in the embodiment of the present invention, the image plane is located on the photosensitive film layer of the substrate 11, and the substrate 11 is attached to the movable stage 12 by a vacuum adsorption device.
In the maskless photoetching system capable of efficiently exposing, a plurality of exposure light sources 1 generate light beams, the light beams emitted by the exposure light sources 1 are converged by a light-condensing component 2, then approximate parallel light beams in different directions are integrated in the same direction through a wavelength selection component 3, then the light beams enter an integrator, the integrator 4 homogenizes the light beams and then enters a spatial light modulator 6, the incident light is modulated by the spatial light modulator 6 and then is imaged near a light-condensing element array 8 through a first imaging system 7, the light beams are converged to the position of a spatial filter 9 through the light-condensing element array 8, high-level diffraction light and stray light are filtered by the spatial filter 9 and are imaged through a second imaging system 10, the second imaging system 10 re-images the light beams and keeps consistent with the position of a photosensitive film layer on the surface of a substrate, and the substrate is vacuum-adsorbed on the surface of a movable worktable, the substrate is subjected to scanning exposure by the movement of the movable stage.
By arranging the plurality of exposure light sources and the wavelength selection component, the approximate light beams with different wavelengths projected from different directions by the plurality of exposure light sources are integrated in the same direction, the light beams of the LED light sources or the laser light sources with 2 wavelengths are converged together to participate in exposure, the exposure illumination is improved, the exposure time is saved, and the production speed is improved.
In particular, in the embodiment of the present invention, the wavelength selective member may be a spectroscope or a light splitting prism.
Specifically, in the embodiment of the present invention, the spatial light modulator 6 is a controllable array structure, and can output a characteristic pattern, the characteristic pattern of the spatial light modulator is transferred onto a photosensitive film layer of a substrate, the spatial light modulator may be a DMD, a LCOS, or a grating light valve array, and includes an array of pixels that can be addressed and controlled independently, each pixel can modulate transmitted, reflected, or diffracted light, including a phase, a gray direction, or a switching state, each unit in the spatial light modulator 6 can be controlled independently, and deflects a certain fixed angle according to different frequencies, so that a light beam is deflected, and a direction of the deflected light beam is an optical axis direction of the first imaging system.
In particular, in the embodiment of the present invention, the light condensing elements in the light condensing element array 8 may be diffraction elements or phase elements.
Specifically, in an embodiment of the present invention, the first imaging system 7 and the second imaging system 10 employ telecentric lenses, which are mainly used in precision optical measurement systems, and since a common optical lens has certain constraint factors, such as distortion of an image, errors caused by selection of a viewing angle, uncertainty of a boundary caused by interference of an inappropriate light source, and the like, the measurement precision is affected. The telecentric lens can effectively reduce or even eliminate the above problems, so that the telecentric lens becomes a decisive component of a precision optical measurement system, and the application field of the telecentric lens is more and more extensive.
In the embodiment of the invention, the exposure light source, the light condensing component, the wavelength selecting component, the integrator, the first imaging system, the light condensing element array, the spatial filter, the second imaging system and the substrate are combined by one set or a plurality of sets of splicing mobile workbench, the plurality of sets of exposure light source, the light condensing component, the wavelength selecting component, the integrator, the first imaging system, the light condensing element array, the spatial filter and the second imaging system correspond to one set of substrate and the mobile workbench, and the plurality of high-resolution maskless lithography systems are arranged side by side in the direction perpendicular to the scanning direction and are used for increasing the scanning width, and the substrate is subjected to large-width scanning exposure by moving the mobile workbench.
In addition, in the embodiment of the present invention, the parameters of the high resolution maskless lithography system are further defined, which specifically include:
as shown in fig. 4, the direction of the light condensing element array has an offset angle θ with the scanning direction of the movable stage, and the following formula is satisfied:
Tan(θ)＝m/Ncell
where m is a positive integer, and Ncell is the number of array units of the condensing element array in the direction close to the scanning direction when the unit pitches of the condensing element array in the X direction and the Y direction are equal, the angle θ can uniformly make up a blank area left by a small light spot of the condensing element, and it is ensured that m units are uniformly scanned at each position.
Further, the system satisfies the following formula:
f＜Pl2/(1.22λ)
wherein f is an equivalent focal length of the condensing elements in the condensing element array, specifically, f is a diffraction element, the equivalent focal length of the phase element, that is, the distance between the element and the waist of the condensing beam when the parallel light passes through, Pl is the distance between the condensing element array, λ is the exposure wavelength, the above formula is a condition for improving the resolution, otherwise, the resolution may be reduced.
Further, the system satisfies the following formula:
0.05＜1.22λ×f/Pl2＜1
wherein f is the equivalent focal length of the condensing elements in the condensing element array, Pl is the distance between the condensing element arrays, and λ is the exposure wavelength, when 1.22 λ xf/Pl2When the number of the light-condensing element array is less than 0.05, the light-condensing spot is difficult to be further reduced due to the limitation of the manufacturing capability, and further improvement is difficult to be achievedResolution, 1.22. lambda. xf/Pl2When the numerical aperture of the condensing element array is too small, the condensing spot is enlarged due to the limitation of the diffraction limit, the resolution is difficult to be improved, the effect of improving the resolution due to the limitation of the diffraction limit is not obvious, and it is difficult to further improve the resolution due to the manufacturing accuracy of the condensing element array or the beam expansion angle, and the above range is an optimum range.
In addition, the first imaging system satisfies the relationship:
0.5<β1<2
where β 1 is Pl/Pd, β 1 is the magnification of the first imaging system, which takes a positive value, Pl is the pitch of the array of light-collecting elements, and Pd is the pitch of the array of cells of the spatial light modulator, and in one embodiment of the present invention, β 1 is 1.
In the embodiment of the present invention, the second imaging system includes, in order from object plane P1 to image plane P2, first lens group G1, stop AS, second lens group G2, third lens group G3,
the first lens group G1 includes at least 1 negative lens and 2 positive lenses, the second lens group G2 includes at least 1 negative lens and 1 positive lens, the third lens group G3 includes at least 1 positive lens,
the second imaging system satisfies the relation
0.5<β2×f1/f23<2.1
0.2<f23/f3<1.8
Wherein, the ratio of beta 2: magnification of the second imaging system, which takes a positive value, f 1: combined focal length of the first lens group, f 23: combined focal length of the second and third lens groups, f 3: the combined focal length of the third lens group;
by the arrangement of the second imaging system, the optical system can keep a telecentric light path, and is beneficial to reducing field curvature, preventing the optical system from generating overlarge spherical aberration and reducing the burden of the whole optical system on correcting the spherical aberration
In addition, the lens of the first lens group closest to the diaphragm is a negative lens, and the mirror surface of the negative lens closest to the diaphragm is a concave surface facing the diaphragm;
the lens of the second lens group closest to the diaphragm is a negative lens, and the mirror surface of the negative lens closest to the diaphragm is a concave surface facing the diaphragm;
the object side lens surface of the positive lens closest to the image surface of the third lens group is a convex surface facing the object surface, and the relational expression is satisfied
0.6<-β21/2×R1/R2<2.3
Wherein, the ratio of beta 2: the magnification of the second imaging system takes a positive value, R1 is the radius of curvature of the mirror surface of the first lens group closest to the stop, and R2 is the radius of curvature of the mirror surface of the second lens group closest to the stop.
The main functions of the above arrangement are to effectively reduce the Petzval (Petzval) of the optical system and to make the field curvature of the optical system well corrected; while correcting well for the primary and high level spherical aberration of the optical system.
As shown in fig. 5, a specific embodiment of a second imaging system of the present invention is given below, in which:
the first lens group G1 comprises a first lens L1, a second lens L2, a third lens L3, a fourth lens L4 and a fifth lens L5; the fifth lens L5 is a negative lens closest to the stop, the surface 9 is a concave surface facing the stop, and the first lens L1, the second lens L2, the third lens L3, and the fourth lens L4 are positive lenses.
A diaphragm AS;
the second lens group G2 includes a sixth lens element L6, a seventh lens element L7 and an eighth lens element L8; the sixth lens L6 is a negative lens closest to the diaphragm, the surface 11 is concave facing the diaphragm, the seventh lens L7, the eighth lens L8 are positive lenses,
the third lens group G3 includes a ninth lens element L9 and a 10 th lens element L10, and the ninth lens element L9 and the 10 th lens element L10 are positive lens elements.
In this embodiment, the second imaging system is a refractive optical system, the second imaging system magnification β 2 is 2, the object effective field of view: 14 × 10.5mm, maximum object image height Hy1 ═ 8.75, exposure wavelength; λ 365nm and λ 405nm, for two wavelengths, the optical parameters of the element are shown in table 1.
TABLE 1
The specific parameters are as follows: r1 ═ 10.65978, R2 ═ 13.40913, -R2/(R1 × β 2)1/2)＝0.89 f1＝32.05，f23＝64.34，β2×f1/f23＝1.01，f3＝108.3，f23/f3＝0.594，
Abbe number: vd is (nd-1)/(nF-nC), which represents the constant of the dispersion degree of the optical material, nF is the F line refractive index of wavelength 486nm, nd is the d line refractive index of wavelength 587nm, nC is the C line refractive index of wavelength 656 nm;
fig. 6 is a graph of the MTF of the transfer function when the second imaging system λ is 365nm, and fig. 7 is a graph of the MTF of the transfer function when the second imaging system λ is 405nm, and it can be seen from the curves in the graph that the MTF values of the representative 0.5 field of view, the 0.75 field of view and the maximum field of view are already very close to the diffraction limit value. The diffraction limit means that when an ideal object point is imaged by an optical system, due to the limitation of diffraction of light of physical optics, an ideal image point cannot be obtained, but a fraunhofer diffraction image is obtained, and the diffraction image is the diffraction limit, namely the maximum value, of the physical optics.
The invention introduces a light condensing element array to condense light beams of a spatial light modulator into discrete light condensing spots and greatly improve the resolution, then the light condensing element array and the spatial light modulator are deflected at a proper angle to scan, so that the discrete light condensing spots are uniformly and reasonably distributed in order in the scanning direction, 2-dimensional plane exposure is realized, meanwhile, through controlling a series of parameters in a system, the corresponding relation between each array unit of the spatial light modulator and the scanning position is calculated in the scanning process, and the resolution can be improved in the dynamic scanning process, for example, fig. 2 is a previous light condensing spot schematic diagram, fig. 3 is a light condensing spot schematic diagram of the invention, and compared with fig. 2 and fig. 3, the light condensing spots obtained by the system of the invention are more condensed, and the resolution can be improved.
It will be evident to those skilled in the art that the invention is not limited to the details of the foregoing illustrative embodiments, and that the present invention may be embodied in other specific forms without departing from the spirit or essential attributes thereof. The present embodiments are therefore to be considered in all respects as illustrative and not restrictive, the scope of the invention being indicated by the appended claims rather than by the foregoing description, and all changes which come within the meaning and range of equivalency of the claims are therefore intended to be embraced therein. Any reference sign in a claim should not be construed as limiting the claim concerned.
Furthermore, it should be understood that although the present description refers to embodiments, not every embodiment may contain only a single embodiment, and such description is for clarity only, and those skilled in the art should integrate the description, and the embodiments may be combined as appropriate to form other embodiments understood by those skilled in the art.
Claims (10)
1. A maskless lithography system capable of efficient exposure: comprises the following steps of sequentially setting:
an exposure light source for generating a light beam;
a light condensing part for condensing the light beam generated by the exposure light source;
an integrator for homogenizing the light beam;
a projection section for projecting the light beam onto the spatial light modulator;
the spatial light modulator is used for modulating the light beams projected on the spatial light modulator into characteristic pattern light beams and then outputting the characteristic pattern light beams;
a first imaging system for imaging the characteristic pattern beam output by the spatial light modulator on an array of condensing elements;
the light condensing element array is used for condensing the characteristic pattern light beams into discrete light condensing spots;
the spatial filter is used for filtering the discrete condensation spots;
a second imaging system for imaging the discrete spot filtered by the spatial filter onto an imaging plane,
the method is characterized in that:
the exposure light source is at least provided with two exposure light sources, a wavelength selection component is arranged between the light condensation component and the integrator, and light beams with different wavelengths produced by the exposure light sources are converged by the light condensation component and then integrated to the same direction from different directions through the wavelength selection component.
2. The maskless lithography system of claim 1, being capable of efficient exposure, said maskless lithography system comprising: the wavelength selection component is any one of a spectroscope or a beam splitter prism.
3. The maskless lithography system of claim 1, being capable of efficient exposure, said maskless lithography system comprising: the first imaging system comprises at least sequentially arranged: the characteristic pattern light beam output by the spatial light modulator is projected onto the reflector through the lens, and the reflector reflects the characteristic pattern light beam onto the lens and outputs the characteristic pattern light beam after being refracted by the lens.
4. The maskless lithography system of claim 1, being capable of efficient exposure, said maskless lithography system comprising: the imaging surface is positioned on a photosensitive film layer of the substrate, the substrate is adsorbed on the movable workbench through a vacuum adsorption device, and the spatial light modulator comprises any one of a DMD (digital micromirror device), an LCOS (liquid Crystal on silicon) and a grating light valve array; the light condensing element in the light condensing element array comprises any one of a diffraction element and a phase element, and the exposure light source comprises any one of an LED light source or a laser light source.
5. The maskless lithography system of claim 1, being capable of efficient exposure, said maskless lithography system comprising: a plurality of maskless photoetching systems capable of high-efficiency exposure are arranged side by side in the direction perpendicular to the scanning direction, and are used for increasing the scanning width.
6. The maskless lithography system of claim 1, being capable of efficient exposure, said maskless lithography system comprising: the direction of the light condensing element array and the scanning direction of the movable workbench have a deflection angle theta, and the following formula is satisfied:
Tan(θ)＝m/Ncell
where m is a positive integer, and Ncell is the number of array cells of the light condensing element array in the approaching scanning direction when the cell pitches of the light condensing element array in the X direction and the Y direction are equal.
7. The maskless lithography system of claim 1, being capable of efficient exposure, said maskless lithography system comprising: the system satisfies the following formula:
f＜Pl2/(1.22λ)
wherein f is the equivalent focal length of the condensing elements in the condensing element array, Pl is the distance between the condensing element arrays, and lambda is the exposure wavelength;
the system satisfies the following formula:
0.05＜1.22λ×f/Pl2＜1
wherein f is the equivalent focal length of the condensing elements in the condensing element array, Pl is the distance between the condensing element arrays, and lambda is the exposure wavelength.
8. The maskless lithography system of claim 1, being capable of efficient exposure, said maskless lithography system comprising: the first imaging system satisfies a relational expression
0.5<β1<2
Where β 1 is Pl/Pd, β 1 is the first imaging system magnification, Pl is the pitch of the array of light collecting elements, and Pd is the pitch of the array of cells of the spatial light modulator.
9. The maskless lithography system of claim 1, being capable of efficient exposure, said maskless lithography system comprising: the second imaging system comprises a first lens group, a diaphragm, a second lens group and a third lens group which are arranged in sequence from an object plane to an image plane, the first lens group at least comprises 1 negative lens and 2 positive lenses, the second lens group at least comprises 1 negative lens and 1 positive lens, the third lens group at least comprises 1 positive lens,
the second imaging system satisfies a relational expression
0.5<β2×f1/f23<2.1
0.2<f23/f3<1.8
Wherein, the ratio of beta 2: magnification of second imaging system, f 1: combined focal length of the first lens group, f 23: combined focal length of the second and third lens groups, f 3: the combined focal length of the third lens group.
10. The maskless lithography system of claim 9, being capable of high efficiency exposure, further comprising: the lens of the first lens group closest to the diaphragm is a negative lens, and the mirror surface of the negative lens closest to the diaphragm is a concave surface facing the diaphragm; the lens of the second lens group closest to the diaphragm is a negative lens, and the mirror surface of the negative lens closest to the diaphragm is a concave surface facing the diaphragm; the object side lens surface of the positive lens closest to the image surface of the third lens group is a convex surface facing the object surface, and the relational expression is satisfied
0.6<-β21/2×R1/R2<2.3
Wherein β 2 is the magnification of the second imaging system, R1 is the radius of curvature of the mirror surface of the first mirror group closest to the stop, and R2 is the radius of curvature of the mirror surface of the second mirror group closest to the stop.
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