CN101809711B - 在晶圆上沉积薄膜的装置与方法以及进行填隙沟渠的方法 - Google Patents
在晶圆上沉积薄膜的装置与方法以及进行填隙沟渠的方法 Download PDFInfo
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- CN101809711B CN101809711B CN2008800250457A CN200880025045A CN101809711B CN 101809711 B CN101809711 B CN 101809711B CN 2008800250457 A CN2008800250457 A CN 2008800250457A CN 200880025045 A CN200880025045 A CN 200880025045A CN 101809711 B CN101809711 B CN 101809711B
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- UQEAIHBTYFGYIE-UHFFFAOYSA-N hexamethyldisiloxane Chemical compound C[Si](C)(C)O[Si](C)(C)C UQEAIHBTYFGYIE-UHFFFAOYSA-N 0.000 description 2
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- UHUUYVZLXJHWDV-UHFFFAOYSA-N trimethyl(methylsilyloxy)silane Chemical compound C[SiH2]O[Si](C)(C)C UHUUYVZLXJHWDV-UHFFFAOYSA-N 0.000 description 1
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
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- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
- H01L21/02274—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/314—Inorganic layers
- H01L21/316—Inorganic layers composed of oxides or glassy oxides or oxide based glass
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Abstract
Description
Claims (24)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR10-2007-0072052 | 2007-07-19 | ||
KR1020070072052A KR100905278B1 (ko) | 2007-07-19 | 2007-07-19 | 박막증착장치, 박막증착방법 및 반도체 소자의 갭-필 방법 |
PCT/KR2008/004131 WO2009011532A2 (en) | 2007-07-19 | 2008-07-14 | Apparatus, method for depositing thin film on wafer and method for gap-filling trench using the same |
Publications (2)
Publication Number | Publication Date |
---|---|
CN101809711A CN101809711A (zh) | 2010-08-18 |
CN101809711B true CN101809711B (zh) | 2012-01-11 |
Family
ID=40260212
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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CN2008800250457A Active CN101809711B (zh) | 2007-07-19 | 2008-07-14 | 在晶圆上沉积薄膜的装置与方法以及进行填隙沟渠的方法 |
Country Status (5)
Country | Link |
---|---|
US (1) | US20100190341A1 (zh) |
KR (1) | KR100905278B1 (zh) |
CN (1) | CN101809711B (zh) |
TW (1) | TWI493654B (zh) |
WO (1) | WO2009011532A2 (zh) |
Families Citing this family (72)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
SG171683A1 (en) | 2006-05-12 | 2011-06-29 | Advanced Tech Materials | Low temperature deposition of phase change memory materials |
CN101495672B (zh) | 2006-11-02 | 2011-12-07 | 高级技术材料公司 | 对于金属薄膜的cvd/ald有用的锑及锗复合物 |
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WO2009011532A3 (en) | 2009-03-12 |
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CN101809711A (zh) | 2010-08-18 |
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WO2009011532A2 (en) | 2009-01-22 |
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