CN101800167A - 一种在锗衬底上制备金属-氧化物-半导体电容的方法 - Google Patents
一种在锗衬底上制备金属-氧化物-半导体电容的方法 Download PDFInfo
- Publication number
- CN101800167A CN101800167A CN200910077625A CN200910077625A CN101800167A CN 101800167 A CN101800167 A CN 101800167A CN 200910077625 A CN200910077625 A CN 200910077625A CN 200910077625 A CN200910077625 A CN 200910077625A CN 101800167 A CN101800167 A CN 101800167A
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- Prior art keywords
- nitrogen
- nitride film
- germanium
- germanium substrate
- atmosphere
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- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 title claims abstract description 65
- 229910052732 germanium Inorganic materials 0.000 title claims abstract description 53
- 238000000034 method Methods 0.000 title claims abstract description 49
- 239000000758 substrate Substances 0.000 title claims abstract description 34
- 239000003990 capacitor Substances 0.000 title abstract description 4
- 239000004065 semiconductor Substances 0.000 title description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 72
- 229910052581 Si3N4 Inorganic materials 0.000 claims abstract description 41
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims abstract description 41
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract description 36
- 229910052735 hafnium Inorganic materials 0.000 claims abstract description 33
- 229910052751 metal Inorganic materials 0.000 claims abstract description 33
- 239000002184 metal Substances 0.000 claims abstract description 33
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims abstract description 26
- -1 hafnium nitride Chemical class 0.000 claims abstract description 20
- 238000000137 annealing Methods 0.000 claims abstract description 19
- 238000000151 deposition Methods 0.000 claims abstract description 18
- 238000005546 reactive sputtering Methods 0.000 claims abstract description 16
- 239000007772 electrode material Substances 0.000 claims abstract description 14
- 229910052786 argon Inorganic materials 0.000 claims abstract description 13
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 11
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 10
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 10
- 230000008021 deposition Effects 0.000 claims abstract description 10
- 238000004151 rapid thermal annealing Methods 0.000 claims abstract description 10
- 238000004140 cleaning Methods 0.000 claims abstract description 9
- 238000004544 sputter deposition Methods 0.000 claims abstract description 7
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims description 22
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 claims description 13
- 238000007254 oxidation reaction Methods 0.000 claims description 13
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 13
- 239000008367 deionised water Substances 0.000 claims description 12
- 229910021641 deionized water Inorganic materials 0.000 claims description 12
- 239000007789 gas Substances 0.000 claims description 12
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims description 11
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims description 10
- 239000004411 aluminium Substances 0.000 claims description 9
- 230000003647 oxidation Effects 0.000 claims description 9
- 229910052715 tantalum Inorganic materials 0.000 claims description 7
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 7
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 6
- 229910052710 silicon Inorganic materials 0.000 claims description 6
- 239000010703 silicon Substances 0.000 claims description 6
- 238000001465 metallisation Methods 0.000 claims description 5
- 230000007797 corrosion Effects 0.000 claims description 4
- 238000005260 corrosion Methods 0.000 claims description 4
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 claims description 4
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 claims description 3
- 229910001882 dioxygen Inorganic materials 0.000 claims description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 2
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 claims description 2
- 239000010936 titanium Substances 0.000 claims description 2
- 229910052719 titanium Inorganic materials 0.000 claims description 2
- 238000009792 diffusion process Methods 0.000 abstract description 24
- 238000004026 adhesive bonding Methods 0.000 abstract description 3
- 230000015572 biosynthetic process Effects 0.000 abstract description 3
- 230000004888 barrier function Effects 0.000 abstract 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 10
- 239000000377 silicon dioxide Substances 0.000 description 5
- 238000002360 preparation method Methods 0.000 description 4
- 235000012239 silicon dioxide Nutrition 0.000 description 4
- 230000009286 beneficial effect Effects 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 125000004430 oxygen atom Chemical group O* 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 230000005641 tunneling Effects 0.000 description 2
- 239000003989 dielectric material Substances 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
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- Semiconductor Integrated Circuits (AREA)
Abstract
Description
Claims (9)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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CN2009100776257A CN101800167B (zh) | 2009-02-09 | 2009-02-09 | 一种在锗衬底上制备金属-氧化物-半导体电容的方法 |
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CN2009100776257A CN101800167B (zh) | 2009-02-09 | 2009-02-09 | 一种在锗衬底上制备金属-氧化物-半导体电容的方法 |
Publications (2)
Publication Number | Publication Date |
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CN101800167A true CN101800167A (zh) | 2010-08-11 |
CN101800167B CN101800167B (zh) | 2011-10-05 |
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Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102509734A (zh) * | 2011-11-08 | 2012-06-20 | 复旦大学 | 一种利用ald制备锗基mos电容的方法 |
CN102737999A (zh) * | 2011-04-12 | 2012-10-17 | 中国科学院微电子研究所 | 锗衬底上制备金属-氧化物-半导体场效应晶体管方法 |
CN103187244A (zh) * | 2013-04-03 | 2013-07-03 | 无锡华润上华科技有限公司 | 一种改善半导体晶圆电容制程中介质分层的方法 |
CN103540902A (zh) * | 2012-07-16 | 2014-01-29 | 上海华虹Nec电子有限公司 | 提高物理溅射成膜质量的方法 |
CN103571253A (zh) * | 2012-07-12 | 2014-02-12 | 罗门哈斯电子材料有限公司 | 高温热退火方法 |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6190963B1 (en) * | 1999-05-21 | 2001-02-20 | Sharp Laboratories Of America, Inc. | Composite iridium-metal-oxygen barrier structure with refractory metal companion barrier and method for same |
-
2009
- 2009-02-09 CN CN2009100776257A patent/CN101800167B/zh active Active
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102737999A (zh) * | 2011-04-12 | 2012-10-17 | 中国科学院微电子研究所 | 锗衬底上制备金属-氧化物-半导体场效应晶体管方法 |
CN102737999B (zh) * | 2011-04-12 | 2015-02-11 | 中国科学院微电子研究所 | 锗衬底上制备金属-氧化物-半导体场效应晶体管方法 |
CN102509734A (zh) * | 2011-11-08 | 2012-06-20 | 复旦大学 | 一种利用ald制备锗基mos电容的方法 |
CN103571253A (zh) * | 2012-07-12 | 2014-02-12 | 罗门哈斯电子材料有限公司 | 高温热退火方法 |
CN103571253B (zh) * | 2012-07-12 | 2015-06-03 | 罗门哈斯电子材料有限公司 | 高温热退火方法 |
CN103540902A (zh) * | 2012-07-16 | 2014-01-29 | 上海华虹Nec电子有限公司 | 提高物理溅射成膜质量的方法 |
CN103187244A (zh) * | 2013-04-03 | 2013-07-03 | 无锡华润上华科技有限公司 | 一种改善半导体晶圆电容制程中介质分层的方法 |
CN103187244B (zh) * | 2013-04-03 | 2016-05-11 | 无锡华润上华科技有限公司 | 一种改善半导体晶圆电容制程中介质分层的方法 |
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Publication number | Publication date |
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CN101800167B (zh) | 2011-10-05 |
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Owner name: BEIJING YANDONG MICROELECTRNIC CO.,LTD. Free format text: FORMER OWNER: INST OF MICROELECTRONICS, C. A. S Effective date: 20150709 |
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Address after: 100020 West eight rooms, dongzhimenwai, Chaoyang District, Beijing Patentee after: BEIJING YANDONG MICROELECTRONIC Co.,Ltd. Address before: 100015 Beijing city Chaoyang District Dongzhimen West eight room Wanhong No. 2 West Street Patentee before: BEIJING YANDONG MICROELECTRONIC Co.,Ltd. |
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