CN101771017B - 基板结构与包含该基板结构的半导体封装构造 - Google Patents

基板结构与包含该基板结构的半导体封装构造 Download PDF

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CN101771017B
CN101771017B CN 200910001730 CN200910001730A CN101771017B CN 101771017 B CN101771017 B CN 101771017B CN 200910001730 CN200910001730 CN 200910001730 CN 200910001730 A CN200910001730 A CN 200910001730A CN 101771017 B CN101771017 B CN 101771017B
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electro
conductive glass
chip
conducting wire
semiconductor packaging
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CN101771017A (zh
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梁荣华
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Advanced Semiconductor Engineering Inc
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Advanced Semiconductor Engineering Inc
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/15Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161Disposition
    • H01L2224/16151Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321Disposition
    • H01L2224/32151Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73201Location after the connecting process on the same surface
    • H01L2224/73203Bump and layer connectors
    • H01L2224/73204Bump and layer connectors the bump connector being embedded into the layer connector

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  • Wire Bonding (AREA)

Abstract

本发明提供一种基板结构与包含该基板结构的半导体封装构造。该基板结构包含有基板,基板上形成图案化线路层,图案化线路层具有多条导电线路。绝缘层覆盖于图案化线路层上,并具有开口,裸露出至少该导电线路的一部份。多个导电玻璃则覆盖于该导电线路的该裸露部分上。

Description

基板结构与包含该基板结构的半导体封装构造
技术领域
本发明涉及一种基板结构与包含该基板结构的半导体封装构造,更特别涉及一种基板结构与包含该基板结构的半导体封装构造,其基板上的图案化线路上设置有导电玻璃,供与芯片电性连接之用。
背景技术
最近,一种所谓的Super Juffit的技术已经为昭和电工公司(Showa DenkoK.K.)所发展,其为将芯片等组件设置在基板上的一种技术。此种Super Juffit技术包括在基板的铜线路上形成胶膜,并在胶膜上涂布焊锡粉末(solderpower),而后再利用回焊(reflow)工艺熔化焊锡粉末,以在铜线路上形成焊锡膜,芯片上的输出输入接点再与焊锡膜电性连接,以达到芯片与铜线路电性连接的目的。
上述Super Juffit技术具有高图案精确性的优点,适合用在微间距的设计上。然而,焊锡膜会有腐蚀其下方的铜线路的问题,且由于经过回焊工艺,焊锡膜不易精确地形成在铜线路上。
发明内容
本发明的目的在于提供一种基板结构与包含该基板结构的半导体封装构造,其基板上的图案化线路上设置有导电玻璃,能够精确地形成在导电线路上所要的位置处,又不会腐蚀下方的导电线路,解决了已知Super Juffit技术所具有的问题。
为达上述目的,本发明的基板结构包含有基板,基板上配置有图案化的线路层,图案化的线路层包含有多条金属制成的导电线路。绝缘层覆盖在线路层上,并具有开口裸露出各导电线路的一部份。各导电线路的裸露部分上,则覆盖有导电玻璃,或者多个具有相同电位的导电线路的裸露部分被同一个导电玻璃所覆盖。为使导电玻璃容易与芯片的输出输入接点接合,导电玻璃的宽度优选大于被覆盖的导电线路的宽度。另外,为了使所形成的导电玻璃具有较好的平坦度,导电线路优选为截成两段,通过导电玻璃形成电性连接;或者将导电玻璃覆盖在不连续的两条导电线路上,使该两导电线路能够电性连接。
本发明的半导体封装构造包含有倒装片,通过多个导电凸块或导电胶,与基板上的导电玻璃电性连接,倒装片与基板之间并填充有非导电胶。
为了让本发明的上述和其它目的、特征、和优点能更明显,下文特举本发明实施例,并配合附图,作详细说明如下。
附图说明
图1为本发明的基板结构的俯视图。
图2a为沿着图1的线2a-2a所做的本发明的基板结构的剖面图。
图2b为沿着图1的线2b-2b所做的本发明的基板结构的剖面图。
图3为本发明的半导体封装构造的剖面图。
具体实施方式
参考图1及2a,本发明的基板结构100包含有基板110,基板110上配置有图案化的线路层120,线路层120包含有多条金属制成的导电线路122。绝缘层130,例如防焊层覆盖在线路层120上,并具有开口132裸露出各导电线路122的一部份。各导电线路122的裸露部分上,覆盖有导电玻璃140,例如氧化铟锡(Indium Tin Oxide;ITO);或者多个具有相同电位的导电线路122的裸露部分可被同一个导电玻璃140所覆盖。为使导电玻璃140容易与芯片的输出输入接点接合,导电玻璃140的宽度优选大于被覆盖的导电线路122的宽度。另外,由于形成在基板110上的导电线路122一般来说并不平整,当导电玻璃140覆盖在导电线路122的裸露部分上时,导电玻璃140的表面也会变得不平整,如此会不易与芯片的输出输入接点电性连接。为避免上述情况,可将导电线路122截断,形成如图2b中的导电线路段122a与122b,并将导电玻璃140形成在基板110上,且覆盖在导电线路段122a、122b的裸露部分上。利用上述方式,导电线路段122a可通过导电玻璃140与导电线路段122b电性连接,且所形成的导电玻璃140的表面也会较为平整,易于与芯片的输出输入接点电性连接。此外,再请参考图1,导电玻璃140亦可覆盖在不连续的两条导电线路122上,使该两导电线路122能够电性连接。
上述的导电玻璃140可利用溅镀或蒸镀的方式并配合屏蔽的使用,精确地形成在导电线路122上所要的位置处。此外,由于导电玻璃140不具腐蚀性,因此不会腐蚀其下方的导电线路122。本发明的基板结构100的导电线路122上的导电玻璃140能与芯片的输出输入接点电性连接,可达到导电线路122与芯片电性连接的目的,因此具有已知Super Juffit技术所具有的优点。另外,承上所述,导电玻璃140不会腐蚀其下方的导电线路122,又可精确地形成在导电线路122上所要的位置处,能改进已知Super Juffit技术所具有的问题。
参考图3,本发明的半导体封装构造300包含有芯片310,例如是倒装片(flip chip),通过多个导电材料320,例如是焊锡凸块(solder stub bump)或金凸块(gold stub bump)等的凸块,或者是例如各向异性导电胶(anisotropicconductive film;ACF)等的导电胶,与基板上110的导电玻璃140电性连接,倒装片310与基板110之间并配置有非导电材料330,例如是非导电膜(non-conductive film)或非导电胶(non-conductive paste),用以保护这些凸块320,使其免于湿气或应力的破坏。
虽然本发明已以前述优选实施例揭示,然其并非用以限定本发明,任何本领域一般技术人员,在不脱离本发明的精神和范围内,当可作各种的更动与修改。因此本发明的保护范围当视所附的权利要求所界定者为准。

Claims (10)

1.一种基板结构,包含:
基板;
图案化线路层,形成于该基板上,包含有多条导电线路;
绝缘层,覆盖于该图案化线路层上,并具有开口,裸露出至少一该导电线路的一部份;及
多个导电玻璃,覆盖于该导电线路的该裸露部分上。
2.如权利要求1所述的基板结构,其中至少两条该导电线路的电位相同,且其该裸露部分被同一个该导电玻璃所覆盖。
3.如权利要求1所述的基板结构,其中各该导电玻璃的宽度大于该导电线路的宽度。
4.一种半导体封装构造,包含:
基板,包含:
图案化线路层,形成于该基板上,包含有多条导电线路;
绝缘层,覆盖于该图案化线路层上,并具有开口,裸露出至少该导电线路的一部份;及
多个导电玻璃,覆盖于该导电线路的该裸露部分上;
芯片,配置于该基板上,并与这些导电玻璃电性连接。
5.如权利要求4所述的半导体封装构造,其中至少两条该导电线路的电位相同,且其该裸露部分被同一个该导电玻璃所覆盖。
6.如权利要求4所述的半导体封装构造,其中各该导电玻璃的宽度大于该导电线路的宽度。
7.如权利要求4所述的半导体封装构造,其中该芯片为倒装片,该半导体封装构造还包含多个凸块,该倒装片通过这些凸块与这些导电玻璃电性连接。
8.如权利要求7所述的半导体封装构造,其中这些凸块为焊锡凸块。
9.如权利要求4所述的半导体封装构造,其中该芯片为倒装片,该半导体封装构造还包含各向异性导电胶,该倒装片通过该各向异性导电胶与这些导电玻璃电性连接。
10.如权利要求7所述的半导体封装构造,还包含非导电膜,配置于该倒装片与该基板之间。
CN 200910001730 2009-01-06 2009-01-06 基板结构与包含该基板结构的半导体封装构造 Active CN101771017B (zh)

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